JP7342648B2 - Electro-optical devices and electronic equipment - Google Patents

Description

The present invention relates to an electro-optical device and an electronic device.

2. Description of the Related Art Electronic devices such as projectors generally use electro-optical devices such as liquid crystal devices that can change optical characteristics for each pixel. Patent Document 1 includes a TFT (Thin Film Transistor) substrate on which a plurality of pixel electrodes are formed, a counter substrate having a common electrode, and a liquid crystal sandwiched between these two substrates. Further, Patent Document 1 discloses a columnar spacer that defines a gap between two substrates. The spacer is formed on the pixel electrode.

Japanese Patent Application Publication No. 2001-5006

In Patent Document 1, a spacer is arranged only in a region included in a pixel electrode in a plan view. For this reason, conventionally, when attempting to obtain sufficient adhesion of the spacer to the pixel electrode, the proportion of the area occupied by the spacer on the pixel electrode increases, resulting in a decrease in the aperture ratio. Therefore, there is a problem in that it is difficult to stabilize the distance between the two substrates using a spacer while suppressing a decrease in the aperture ratio.

One embodiment of the electro-optical device of the present invention includes a first substrate including a laminate including a plurality of insulating layers, a pixel electrode, a relay electrode connected to the pixel electrode via a contact hole, and a common electrode. an electro-optical layer disposed between the pixel electrode and the common electrode, defining a distance between the pixel electrode and the common electrode , and overlapping the contact hole in a plan view. a spacer disposed at a position above the first substrate; and a protection section disposed between the pixel electrode and the spacer and at a position overlapping the contact hole in a plan view, the spacer being disposed at a position above the first substrate. a first portion that overlaps the pixel electrode and the protective portion when viewed from the thickness direction, and a second portion that does not overlap the pixel electrode when viewed from the thickness direction , and the protective portion is located on the pixel electrode side. A metal oxide film, an insulating film, and a light shielding film are arranged in this order .

1 is a plan view of an electro-optical device according to a preferred embodiment. 2 is a cross-sectional view of the electro-optical device shown in FIG. 1. FIG. FIG. 3 is an equivalent circuit diagram showing the electrical configuration of the element substrate. FIG. 2 is a cross-sectional view showing a part of the electro-optical device. FIG. 3 is a plan view showing a part of the element substrate. This is a cross section taken along the line CC in FIG. 5. FIG. 3 is a diagram for explaining a method of forming a protective layer and the like. FIG. 3 is a cross-sectional view for explaining a method of forming a first recess. FIG. 3 is a cross-sectional view for explaining a method for manufacturing a spacer. FIG. 3 is a cross-sectional view for explaining a method for manufacturing a spacer. 1 is a perspective view showing a personal computer that is an example of an electronic device. FIG. 1 is a plan view showing a smartphone, which is an example of an electronic device. FIG. 1 is a schematic diagram showing a projector that is an example of an electronic device.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the dimensions or scale of each part may differ from the actual size, and some parts are shown schematically to facilitate understanding. Further, the scope of the present invention is not limited to these forms unless there is a statement that specifically limits the present invention in the following description.

1. Electro-Optical Device As an example of the electro-optical device of the present invention, an active matrix liquid crystal device will be described as an example.

1A. Basic Configuration FIG. 1 is a plan view of an electro-optical device 100 according to the first embodiment. FIG. 2 is a cross-sectional view of the electro-optical device 100 shown in FIG. 1. Note that in FIG. 1, illustration of the counter substrate 4 is omitted. Further, in the following description, for convenience of explanation, the X-axis, Y-axis, and Z-axis, which are orthogonal to each other, will be used as appropriate. Further, one direction along the X axis is referred to as the X1 direction, and a direction opposite to the X1 direction is referred to as the X2 direction. Similarly, one direction along the Y axis is referred to as the Y1 direction, and the direction opposite to the Y1 direction is referred to as the Y2 direction. One direction along the Z axis is referred to as the Z1 direction, and the direction opposite to the Z1 direction is referred to as the Z2 direction.

The electro-optical device 100 shown in FIGS. 1 and 2 is a transmissive liquid crystal device. As shown in FIG. 2, the electro-optical device 100 includes a light-transmitting element substrate 2, a light-transmitting counter substrate 4, a plurality of spacers 51, a frame-shaped sealing member 8, and a liquid crystal layer 9. and has. The element substrate 2 is an example of a "first substrate," the counter substrate 4 is an example of a "second substrate," and the liquid crystal layer 9 is an example of an "electro-optic layer." The seal member 8 is arranged between the element substrate 2 and the counter substrate 4. The liquid crystal layer 9 is arranged within a region surrounded by the element substrate 2, the counter substrate 4, and the seal member 8. The element substrate 2, liquid crystal layer 9, and counter substrate 4 are arranged along the Z axis. Hereinafter, viewing from the Z1 direction or the Z2 direction will be referred to as "planar view."

In the electro-optical device 100 of this embodiment, light is incident on, for example, the element substrate 2, transmitted through the liquid crystal layer 9, and emitted from the counter substrate 4. Note that the light may be incident on the counter substrate 4, transmitted through the liquid crystal layer 9, and emitted from the element substrate 2. The light is visible light. "Translucency" means transparency to visible light, and preferably means that the transmittance of visible light is 50% or more. Furthermore, although the electro-optical device 100 shown in FIG. 1 has a rectangular shape in a plan view, the shape of the electro-optic device 100 in a plan view is not limited to this, and may be circular, for example.

As shown in FIG. 2, the element substrate 2 includes a first base material 21, a laminate 22, a plurality of pixel electrodes 26, and a first alignment film 29. The thickness direction of the laminate 22, ie, the lamination direction, is the same as the Z1 direction or the Z2 direction. The surface of the first base material 21 of the element substrate 2 is parallel to the XY plane. The first base material 21 is composed of a flat plate having translucency and insulation properties. The material of the first base material 21 is, for example, glass or quartz. The laminate 22 has translucency and insulation properties. Although not shown in FIG. 2, a plurality of wirings and the like are arranged in the stacked body 22. Each pixel electrode 26 has translucency. The material of each pixel electrode 26 is, for example, a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). Further, although not shown, the element substrate 2 may include a plurality of dummy pixel electrodes arranged so as to surround the plurality of pixel electrodes 26 in plan view. Each dummy pixel electrode is an electrode that does not contribute to displaying an image. Further, the first alignment film 29 is located closest to the liquid crystal layer 9 in the element substrate 2, and aligns the liquid crystal molecules of the liquid crystal layer 9. The material of the first alignment film 29 is, for example, polyimide and silicon oxide.

As shown in FIG. 2, the plurality of spacers 51 are arranged between the stacked body 22 and the counter substrate 4. Note that each spacer 51 and element substrate 2 will be explained later.

As shown in FIG. 2, the counter substrate 4 includes a second base material 41, an insulating film 42, a common electrode 45, and a second alignment film 46. The second base material 41, the insulating film 42, the common electrode 45, and the second alignment film 46 are arranged in this order. The second alignment film 46 is located closest to the liquid crystal layer 9 side. Each of the insulating film 42, the common electrode 45, and the second alignment film 46 overlaps almost the entire area of the second base material 41 in plan view. The second base material 41 is composed of a flat plate having translucency and insulation properties. The material of the second base material 41 is, for example, glass or quartz. The material of the insulating film 42 is, for example, a silicon-based inorganic material, such as silicon oxide, having light-transmitting and insulating properties. The common electrode 45 is electrically connected to the element substrate 2 via a conduction electrode (not shown). For example, a fixed potential is applied to the common electrode 45. The material of the common electrode 45 is, for example, a transparent conductive material such as ITO or IZO. The second alignment film 46 aligns the liquid crystal molecules of the liquid crystal layer 9. The material of the second alignment film 46 is, for example, polyimide and silicon oxide.

The seal member 8 is formed using, for example, an adhesive containing various curable resins such as epoxy resin. The seal member 8 is fixed to each of the element substrate 2 and the counter substrate 4.

Liquid crystal layer 9 includes liquid crystal molecules having positive or negative dielectric anisotropy. The liquid crystal layer 9 is sandwiched between the element substrate 2 and the counter substrate 4 such that the liquid crystal molecules are in contact with both the first alignment film 29 and the second alignment film 46. The liquid crystal layer 9 is arranged between the plurality of pixel electrodes 26 and the common electrode 45, and its optical characteristics change depending on the electric field. Specifically, the orientation of liquid crystal molecules in the liquid crystal layer 9 changes depending on the voltage applied to the liquid crystal layer 9.

As shown in FIG. 1, the element substrate 2 includes a plurality of scanning line drive circuits 11, a data line drive circuit 12, a plurality of external terminals 14, and a plurality of routing wiring lines 15. Each of the plurality of lead wiring lines 15 is connected to one of the plurality of external terminals 14. Each external terminal 14 is connected to a wiring board (not shown). Various signals are input to the element board 2 via the wiring board. Further, each of the plurality of lead wiring lines 15 is connected to the scanning line drive circuit 11 or the data line drive circuit 12.

The electro-optical device 100 configured as described above includes a display area A10 that displays an image, and a peripheral area A20 that surrounds the display area A10 in plan view. The display area A10 has a plurality of pixels P arranged in a matrix. A plurality of pixel electrodes 26 are arranged in a one-to-one ratio in the plurality of pixels P. In the peripheral region A20, the scanning line drive circuit 11, the data line drive circuit 12, etc. are arranged.

1B. Electrical Configuration FIG. 3 is an equivalent circuit diagram showing the electrical configuration of the element substrate 2. As shown in FIG. 3, the element substrate 2 includes a plurality of transistors 23, n scanning lines 244, m data lines 246, n capacitor lines 245, and a plurality of storage capacitors 240. . These are arranged in the stack 22 of FIG. Note that each of n and m is an integer of 2 or more. Further, the plurality of transistors 23 are arranged one-to-one on the plurality of pixel electrodes 26. Each transistor 23 is, for example, a TFT that functions as a switching element. Each transistor 23 includes a gate, a source, and a drain.

Each of the n scanning lines 244 extends along the X-axis, and the n scanning lines 244 are arranged at regular intervals along the Y-axis. Each of the n scanning lines 244 is electrically connected to the respective gates of some transistors 23 among all the transistors 23. Further, the n scanning lines 244 are electrically connected to the scanning line drive circuit 11 shown in FIG. Scanning signals G1, G2, . . . , and Gn are supplied line-sequentially from the scanning line drive circuit 11 to the 1 to n scanning lines 244.

Each of the m data lines 246 shown in FIG. 3 extends along the Y-axis, and the m data lines 246 are arranged at regular intervals along the X-axis. Each of the m data lines 246 is electrically connected to the respective sources of some transistors 23 among all the transistors 23. Furthermore, the m data lines 246 are electrically connected to the data line drive circuit 12 shown in FIG. Image signals S1, S2, . . . , and Sm are supplied in parallel from the data line drive circuit 12 to the 1 to m data lines 246.

The n scanning lines 244 and m data lines 246 shown in FIG. 3 are insulated from each other and form a lattice shape in plan view. A region surrounded by two adjacent scanning lines 244 and two adjacent data lines 246 corresponds to a pixel P. Each pixel electrode 26 is electrically connected to the drain of the corresponding transistor 23.

Each of the n capacitive lines 245 extends along the X-axis, and the n capacitive lines 245 are arranged at regular intervals along the Y-axis. Further, the n capacitor lines 245 are insulated from the m data lines 246 and the n scan lines 244, and are formed apart from them. A fixed potential, such as a ground potential, is applied to each capacitor line 245, for example. Further, each of the n capacitor lines 245 is electrically connected to some of all the storage capacitors 240. The plurality of storage capacitors 240 are electrically connected to the plurality of pixel electrodes 26 on a one-to-one basis. Furthermore, the plurality of storage capacitors 240 are electrically connected to the drains of the plurality of transistors 23 on a one-to-one basis. Each storage capacitor 240 is a capacitive element for holding the potential of the pixel electrode 26.

When the scanning signals G1, G2, . . . , and Gn are sequentially activated and n scanning lines 244 are sequentially selected, the transistor 23 connected to the selected scanning line 244 is turned on. Then, image signals S1, S2, ..., and Sm of sizes corresponding to the gradation to be displayed are taken in through the m data lines 246 to the pixel P corresponding to the selected scanning line 244, and the pixel applied to electrode 26. As a result, a voltage corresponding to the gradation to be displayed is applied to the liquid crystal capacitor formed between each pixel electrode 26 and the common electrode 45 of the counter substrate 4 shown in FIG. The orientation of liquid crystal molecules changes. Further, the applied voltage is held by the storage capacitor 240. Light is modulated by such changes in the orientation of liquid crystal molecules, making it possible to display gradations.

1C. Element substrate 2
FIG. 4 is a cross-sectional view showing a part of the electro-optical device 100. As shown in FIG. 4, the element substrate 2 includes a first base material 21, a laminate 22, a moisture absorption film 25, a plurality of pixel electrodes 26, a coating layer 28, and a first alignment film 29. . The laminate 22, the moisture absorbing film 25, the plurality of pixel electrodes 26, the coating layer 28, and the first alignment film 29 are laminated in this order starting from the first base material 21. Furthermore, a plurality of spacers 51 are arranged between the laminate 22 and the coating layer 28. Further, although not shown in FIG. 4, the element substrate 2 has a plurality of protection parts 30. The plurality of protection parts 30 will be explained later with reference to FIG. In the following description, the Z1 direction is assumed to be upward and the Z2 direction is assumed to be downward.

As shown in FIG. 4, a laminate 22 is arranged on the first base material 21. Laminated body 22 has a plurality of insulating layers 221, 222, 223, and 224. The insulating layers 221, 222, 223, and 224 are laminated in this order from the first base material 21 toward the plurality of pixel electrodes 26. Note that the number of layers that the laminate 22 has is not limited to four, but is arbitrary. For example, the number of layers is appropriately set depending on the arrangement of various wirings.

A plurality of light shielding parts 241, a plurality of transistors 23, and a plurality of relay electrodes 249 are arranged in the laminate 22. Note that in FIG. 4, each light shielding portion 241, each transistor 23, and each relay electrode 249 are each schematically shown. Further, although not shown in FIG. 4, the wiring shown in FIG. 3 and the like are arranged in the stacked body 22. Specifically, in the stacked body 22, the plurality of scanning lines 244, the plurality of capacitor lines 245, the plurality of data lines 246, and the plurality of storage capacitors 240 described above are arranged.

As shown in FIG. 4, a plurality of light shielding parts 241 are arranged between the insulating layer 221 and the insulating layer 222. The plurality of light shielding parts 241 are arranged on a one-to-one basis for the plurality of transistors 23. Each light blocking section 241 blocks light from entering the corresponding transistor 23. The material of each light shielding part 241 is not particularly limited, but is, for example, a metal such as tungsten. Note that the plurality of light shielding parts 241 may be arranged on the first base material 21. Further, the plurality of light shielding parts 241 may be omitted.

A plurality of transistors 23 are arranged between the insulating layer 222 and the insulating layer 223. Although not shown, each transistor 23 includes a semiconductor layer, a gate electrode, and a gate insulating layer. The semiconductor layer has a source region, a drain region, and a channel region. The semiconductor layer is made of polysilicon, for example. A region of the semiconductor layer other than the channel region is doped with an impurity that increases conductivity. Further, the gate electrode is formed, for example, by doping polysilicon with an impurity that increases conductivity. The gate electrode may be formed of a conductive material such as metal, metal silicide, and metal compound.

A plurality of relay electrodes 249 are arranged between the insulating layer 223 and the insulating layer 224. The plurality of relay electrodes 249 are arranged one-to-one on the plurality of transistors 23. Each relay electrode 249 is electrically connected to the drain of the corresponding transistor 23. Furthermore, the plurality of relay electrodes 249 are arranged one-to-one on the plurality of pixel electrodes 26. Each relay electrode 249 electrically relays between the transistor 23 and the pixel electrode 26. Further, the insulating layer 224 has a plurality of first recesses 2241. A spacer 51 is arranged on each first recess 2241.

The material of each relay electrode 249 is, for example, metal, metal nitride, or metal silicide. Examples of such metals include tungsten (W), titanium (Ti), chromium (Cr), iron (Fe), and aluminum (Al). Further, the material of each wiring not shown in FIG. 4 is also, for example, the metal, metal, metal nitride, or metal silicide. In particular, by including aluminum, the resistance of the wiring can be reduced. Further, although not shown, the arrangement of each wiring arranged in the stacked body 22 is arbitrary. For example, each wiring may be arranged above the transistor 23, or each wiring may be arranged below the transistor 23.

Each material of the insulating layers 221 to 224 is, for example, an inorganic material containing silicon such as silicon oxide and silicon oxynitride. By using the inorganic material, it has excellent optical properties and can easily form a sufficiently thin layer compared to a resin material. Further, the insulating layers 221 to 224 may be made of the same material or may be made of different materials. However, by using the same material, it is easy to form the laminate 22, and interfacial reflection is suppressed.

As shown in FIG. 4, a moisture absorbing film 25 is arranged on the laminate 22. The hygroscopic film 25 has hygroscopic properties and adsorbs moisture mixed into the liquid crystal layer 9. The hygroscopic film 25 is made of an inorganic material having translucency and hygroscopicity, such as BSG (Borosilicate Glass), for example. Note that the moisture absorption film 25 may be omitted as appropriate.

A plurality of pixel electrodes 26 are arranged on the moisture absorption film 25. A light-transmitting and insulating coating layer 28 is arranged on the plurality of pixel electrodes 26 . The coat layer 28 contacts the plurality of pixel electrodes 26 . Further, the coat layer 28 covers the plurality of spacers 51. The material of the coat layer 28 is, for example, an inorganic material containing silicon such as silicon oxide and silicon oxynitride. Note that the coat layer 28 may be omitted as appropriate.

A first alignment film 29 is arranged on the coat layer 28 . The first alignment film 29 contacts the coating layer 28 . By disposing the coat layer 28 under the first alignment film 29, it is possible to suppress the formation of a portion of the pixel electrode 26 that is not covered with the first alignment film 29. Therefore, the presence of the coat layer 28 can improve the uniformity of the first alignment film 29.

In this embodiment, a portion of the first alignment film 29 located on each spacer 51 contacts the counter substrate 4 . Note that the coat layer 28 and the first alignment film 29 only need to be disposed at least on the plurality of pixel electrodes 26. Therefore, the coat layer 28 and the first alignment film 29 do not need to cover each spacer 51. In this case, each spacer 51 may directly contact the counter substrate 4.

FIG. 5 is a plan view showing a part of the element substrate 2. As shown in FIG. FIG. 4 corresponds to a cross section taken along line CC in FIG. Note that for convenience of explanation, a dot pattern is attached to each relay electrode 249. Each pixel electrode 26 is provided with a diagonal line pattern. Further, in FIG. 5, illustration of the coat layer 28 and the first alignment film 29 is omitted.

As shown in FIGS. 4 and 5, the element substrate 2 has a plurality of light-transmitting areas A11 through which light passes, and a wiring area A12 that blocks light. The plurality of transparent areas A11 are arranged in a matrix. Each of the plurality of transparent regions A11 has a substantially rectangular shape in plan view. A pixel electrode 26 is provided in each light-transmitting area A11. Each light-transmitting area A11 is an area that contributes to displaying an image. The wiring area A12 has a grid shape in plan view and surrounds the light-transmitting area A11. In the wiring area A12, the plurality of relay electrodes 249, the plurality of scanning lines 244, the plurality of data lines 246, and the plurality of capacitance lines 245 described above are provided. Furthermore, although not shown, the plurality of transistors 23 and the plurality of storage capacitors 240 described above are arranged in the wiring region A12.

1D. Configuration of spacers 51 and their vicinity As shown in FIGS. 4 and 5, the plurality of spacers 51 are arranged one-to-one on the plurality of relay electrodes 249. Further, the plurality of spacers 51 are arranged one-to-one on the plurality of pixel electrodes 26. For example, as shown in FIG. 5, a spacer 51a, which is an arbitrary spacer 51 among the plurality of spacers 51, corresponds to the pixel electrode 26 located diagonally above and to the right in FIG. 5 with respect to the spacer 51a. will be placed. Further, the spacer 51a corresponds to the relay electrode 249 that overlaps the spacer 51a in plan view.

As shown in FIG. 4, each spacer 51 is columnar and protrudes from the element substrate 2 toward the counter substrate 4 along the Z1 direction. Each spacer 51 defines the distance between the element substrate 2 and the counter substrate 4. Specifically, each spacer 51 defines the distance between the corresponding pixel electrode 26 and the common electrode 45. Viewed from another perspective, each spacer 51 defines the thickness of the liquid crystal layer 9. Further, as described above, the spacer 51 is arranged for each pixel electrode 26. Therefore, variations in the distance between the element substrate 2 and the counter substrate 4 can be reduced for each pixel P. Further, the difference in distance between the plurality of pixels P can be reduced.

The material of each spacer 51 is not particularly limited, but is preferably an inorganic material. In other words, each spacer 51 preferably does not contain a resin material. Since each spacer 51 does not contain a resin material, the possibility that a resin component will enter into the liquid crystal layer 9 is avoided. Therefore, it is possible to prevent malfunctions such as malfunctions due to organic contamination. In addition, by being made of an inorganic material, the dimensional accuracy of each spacer 51 can be improved and dimensional changes over time can be made less likely to occur, compared to the case of being made of an organic material. Therefore, the distance between the element substrate 2 and the counter substrate 4 can be stabilized over a long period of time.

The inorganic material constituting each spacer 51 is not particularly limited, but is preferably silicon oxide or silicon oxynitride, for example. By containing silicon nitride and silicon oxynitride, the spacer 51 with high dimensional accuracy can be easily manufactured by, for example, dry etching. Note that the manufacturing method will be explained later. Further, among inorganic materials, silicon oxide allows each spacer 51 to be manufactured particularly easily and with high dimensional accuracy.

Note that each spacer 51 may be formed of multiple layers. In that case, the plurality of layers may be made of different materials or may be made of the same material. Therefore, each spacer 51 may include multiple types of inorganic materials. Further, each spacer 51 may include a resin material.

As shown in FIG. 5, each spacer 51 has a rectangular shape in plan view. Note that the shape may be, for example, a polygon other than a quadrangle or a circle. Further, the shape of each spacer 51 shown in FIG. 5 in plan view is a rectangle whose longitudinal direction is along the X-axis, but it may also be a rectangle whose longitudinal direction is along the Y-axis. .

Furthermore, each spacer 51 overlaps the intersection of the scanning line 244 and the data line 246 in plan view. Furthermore, a portion of each spacer 51 overlaps the corresponding relay electrode 249 in plan view. Furthermore, the plurality of spacers 51 are arranged one-to-one in the plurality of first recesses 2241. In plan view, each first recess 2241 does not overlap the pixel electrode 26 but overlaps various wirings. In other words, the first recess 2241 is formed in a portion that does not contribute to image display. Moreover, each first recess 2241 does not overlap with the outer edge of the corresponding spacer 51 in plan view, but overlaps with the center of the spacer 51.

Furthermore, a portion of each spacer 51 overlaps the corresponding pixel electrode 26 in plan view. Specifically, each spacer 51 has a first portion P1 that overlaps with the corresponding pixel electrode 26 and a second portion P2 that does not overlap with the corresponding pixel electrode 26 in plan view. For example, the spacer 51a has a first portion P1 that overlaps the pixel electrode 26 located diagonally above and to the right in FIG. 5 with respect to the spacer 51a, and a second portion P2 that does not overlap the pixel electrode 26. The second portion P2 overlaps the wiring in plan view.

Since the spacer 51a has the first portion P1 and the second portion P2, the area where the spacer 51a overlaps the pixel electrode 26 in plan view is not enlarged, compared to the case where the spacer 51a is composed of only the first portion P1. , the arrangement area of the spacer 51a can be increased. By increasing the arrangement area, the stability of the spacer 51a is improved. Further, the adhesion of the spacer 51a to the element substrate 2 is improved. Therefore, it is possible to improve the adhesion between the spacer 51a and the element substrate 2 while suppressing a decrease in the aperture ratio. Therefore, separation of the spacer 51a from the element substrate 2 is suppressed, so that the stability of the distance between the element substrate 2 and the counter substrate 4 can be improved by the spacer 51a.

Note that all the spacers 51 do not need to have the first portion P1 and the second portion P2. However, it is preferable that all the spacers 51 have a first portion P1 and a second portion P2. Thereby, the stability of the distance between the element substrate 2 and the counter substrate 4 can be particularly improved. Further, it is possible to suppress variations in the stability of the distance for each pixel P.

Furthermore, since each spacer 51 has the first portion P1 that overlaps the pixel electrode 26 in a plan view, it is possible to increase the density of the pixels P compared to the case where the spacer 51 does not have the first portion P1. In the example shown in FIG. 5, each spacer 51 overlaps four pixel electrodes 26 in plan view. Therefore, it is possible to further effectively increase the density of the pixels P. Therefore, the resolution of the electro-optical device 100 can be increased.

FIG. 6 is a cross section taken along line CC in FIG. In FIG. 6, an arbitrary spacer 51a among the plurality of spacers 51 is illustrated. Below, the spacer 51a and elements related thereto will be mainly explained.

As shown in FIG. 6, the second portion P2 of the spacer 51a contacts the laminate 22. Here, it is preferable that the laminate 22 includes an inorganic material forming the spacer 51a. By including the inorganic material, the adhesion between the second portion P2 and the laminate 22 can be improved compared to a case where the inorganic material is not included. Therefore, separation of the spacer 51a from the element substrate 2 can be more effectively suppressed.

Specifically, the second portion P2 contacts the surface of the first recess 2241 that the laminate 22 has. A portion of the second portion P2 is disposed within the first recess 2241. That is, the laminate 22 has a first recess 2241 in which a part of the spacer 51a is placed. The first recess 2241 is a depression formed on the upper surface of the insulating layer 224. Further, the second portion P2 penetrates the moisture absorption film 25. By disposing a part of the second portion P2 in the first recess 2241, the adhesion between the spacer 51a and the laminate 22 can be improved compared to the case where the second portion P2 is disposed on a flat surface. . Further, by disposing the spacer 51a in the first recess 2241, the spacer 51a can be made more stable than when disposed on a flat surface. For this reason, separation of the spacer 51a from the element substrate 2 can be more effectively suppressed.

As shown in FIG. 6, the second portion P2 has a tip surface 511. The tip surface 511 is a surface opposite to the surface of the spacer 51a that contacts the stacked body 22. The tip surface 511 has a second recess 5111. The second recess 5111 is a depression formed in the distal end surface 511. The surface of the second recess 5111 is formed along the shape of the surface of the first recess 2241. Therefore, although not shown, the second recess 5111 overlaps the first recess 2241 in plan view. A portion of the tip surface 511 excluding the second recess 5111 defines the distance between the element substrate 2 and the counter substrate 4. Further, in the illustration, each of the coat layer 28 and the first alignment film 29 is formed along the surface of the second recess 5111, but may be formed so as to fill the inside of the second recess 5111. By forming the spacer 51a to be buried, the spacer 51a can be made more stable with respect to the counter substrate 4.

As shown in FIG. 6, the second portion P2 of the spacer 51a is in contact with the laminate 22, whereas the first portion P1 of the spacer 51a is not in contact with the laminate 22. A moisture absorption film 25, a pixel electrode 26, and a protection section 30 are arranged between the first portion P1 and the laminate 22. Note that the plurality of protection parts 30 included in the element substrate 2 are arranged on the plurality of spacers 51 on a one-to-one basis. In FIG. 6, a protection part 30 corresponding to the spacer 51a among the plurality of protection parts 30 is illustrated.

A contact hole 2240 is formed in a portion of the stacked body 22 that overlaps the spacer 51a in plan view. Note that the stacked body 22 has a plurality of contact holes 2240, and the plurality of contact holes 2240 are formed one to one in the plurality of spacers 51a.

A portion of the pixel electrode 26 is placed in the contact hole 2240. Contact hole 2240 is a hole existing in insulating layer 224. As shown in FIG. 6, the pixel electrode 26 has a contact portion 260 arranged along a wall surface forming a contact hole 2240. Contact portion 260 is connected to relay electrode 249. Note that the pixel electrode 26 may be connected to the relay electrode 249 by a metal plug filling the contact hole 2240.

A protection portion 30 is arranged on the contact portion 260 of the pixel electrode 26 . Therefore, the protection part 30 is arranged between the pixel electrode 26 and the spacer 51a. The protection part 30 includes a film made of a material different from that of the pixel electrode 26 and the material of the spacer 51a. Therefore, for example, the pixel electrode 26 and the laminate 22 can be protected when manufacturing the spacer 51a. Further, depending on the type of inorganic material contained in the spacer 51a, if the spacer 51a is in contact with the pixel electrode 26, the spacer 51a may affect the crystallinity of the pixel electrode 26. However, by arranging the protection part 30 that protects the pixel electrode 26, it is possible to suppress the possibility that this effect will occur.

Specifically, the protection section 30 includes a metal oxide film 31, an insulating film 32, and a light shielding film 33. The metal oxide film 31, the insulating film 32, and the light shielding film 33 are arranged in this order from the pixel electrode 26.

The material of the metal oxide film 31 is different from the inorganic material forming the spacer 51a and the material of the pixel electrode 26. The presence of the metal oxide film 31 allows the pixel electrode 26 to be protected during the manufacture of the spacer 51a. Therefore, it is possible to suppress damage to the pixel electrode 26 during manufacturing.

Specifically, the material of the metal oxide film 31 is, for example, aluminum oxide (Al ₂ O ₃ ) or hafnium oxide (HfO ₂ ). By being made of this material, the pixel electrode 26 can be more effectively protected during the manufacture of the spacer 51a, compared to the case where it is made of other materials. In particular, when the material of the pixel electrode 26 is a transparent conductive material such as ITO and the material of the spacer 51a is silicon oxide or silicon oxynitride, the pixel electrode 26 can be particularly suitably protected by the metal oxide film 31. can.

An insulating film 32 is arranged on the metal oxide film 31. The insulating film 32 preferably contains silicon oxide such as silicon dioxide, or silicon oxynitride, and is more preferably composed of silicon oxide.

A light shielding film 33 having a light shielding property is arranged on the insulating film 32. Therefore, the protection part 30 includes a light shielding film 33 having a light shielding property. The material of the light shielding film 33 is different from the inorganic material forming the spacer 51a and the material of the pixel electrode 26. The presence of such a light shielding film 33 prevents the spacer 51a from functioning as a light guide when the spacer 51a has translucency. Therefore, it is possible to prevent light from a certain pixel P from penetrating into another pixel P and reducing the contrast. In addition, in this specification, the light-shielding property means the light-shielding property against visible light, and preferably means that the transmittance of visible light is less than 50%, and more preferably 10% or less. say. Furthermore, the presence of the light shielding film 33 allows the pixel electrode 26 to be protected during the manufacture of the spacer 51a.

The material of the light shielding film 33 is, for example, metal such as titanium nitride (TiN) or silicon nitride (SiN). By being made of such a material, it is possible to particularly effectively prevent the spacer 51a from functioning as a light guide. Furthermore, since the light shielding film 33 is made of silicon nitride, the spacer 51a can be formed without using metal. Therefore, deterioration of the liquid crystal layer 9 due to metal entering the liquid crystal layer 9 is suppressed. Therefore, the life of the electro-optical device 100 can be extended.

Furthermore, since the aforementioned insulating film 32 is disposed between the pixel electrode 26 and the light shielding film 33, the light shielding film 33 does not contact the pixel electrode 26. Therefore, even if the light shielding film 33 contains metal, it is possible to suppress changes in the crystallinity of the pixel electrode 26 due to the influence of the light shielding film 33. Further, the metal oxide film 31, the insulating film 32, and the light shielding film 33 are covered with the aforementioned coating layer 28. Therefore, even if the light shielding film 33 contains metal, deterioration of the liquid crystal layer 9 due to metal entering the liquid crystal layer 9 is suppressed. Therefore, the life of the electro-optical device 100 can be extended.

Note that any one of the films constituting the protection section 30 may be omitted. For example, the metal oxide film 31 may be omitted. Furthermore, the protection section 30 may include a film other than the metal oxide film 31, the insulating film 32, and the light shielding film 33.

1E. Method for manufacturing spacers 51 Hereinafter, a method for manufacturing a plurality of spacers 51 and a method for manufacturing elements related thereto will be described. FIG. 7 is a diagram for explaining a method of forming the protective layer 30x and the like. In addition, below, the spacer 51a will be explained as a representative.

First, as shown in FIG. 7, a contact hole 2240 is formed in the stacked body 22 by, for example, etching. Note that the insulating layers 221 to 224 are each formed by, for example, thermal oxidation or chemical vapor deposition (CVD) method. Further, the relay electrode 249 and each of the various wirings are formed by, for example, forming a metal film by sputtering or vapor deposition, and then etching the metal film using a resist mask.

Next, a moisture absorption film 25 is formed on the laminate 22 by, for example, a CVD method. Next, a plurality of pixel electrodes 26 are formed on the moisture absorption film 25. For example, a layer made of a transparent electrode material is formed by a CVD method or a PVD method, and then the layer is patterned using a mask. As a result, a plurality of pixel electrodes 26 are formed. A portion of each pixel electrode 26 is placed in the contact hole 2240. Thus, a pixel electrode 26 having a contact portion 260 is formed.

Next, a metal oxide film 31x is formed on the plurality of pixel electrodes 26 by, for example, a CVD method. The metal oxide film 31x becomes a plurality of metal oxide films 31 through subsequent steps. The material of the metal oxide film 31x is, for example, aluminum oxide or hafnium oxide. Next, an insulating film 32x is formed by, for example, a plasma CVD method. The insulating film 32x becomes a plurality of insulating films 32 through a later process. The material of the insulating film 32x is, for example, silicon oxide or silicon oxynitride. Next, a light shielding film 33x is formed on the insulating film 32x by, for example, a sputtering method or a vapor deposition method. The light shielding film 33x becomes a plurality of light shielding films 33 through a later process. The material of the light shielding film 33x is, for example, metal such as titanium nitride or silicon nitride. Through the above steps, a protective layer 30x including a metal oxide film 31x, an insulating film 32x, and a light shielding film 33x is formed.

FIG. 8 is a cross-sectional view for explaining a method of forming the first recess 2241. Next, as shown in FIG. 8, portions of the protective layer 30x, the moisture absorption film 25, and the laminate 22 are removed, for example, by etching using a resist mask. As a result of this removal, a first recess 2241 is formed in the stacked body 22 . In addition, a through hole is formed in each of the light shielding film 33x, the insulating film 32x, the metal oxide film 31x, and the moisture absorbing film 25 so as to overlap the first recess 2241 in a plan view.

For example, parts of the light shielding film 33x, the insulating film 32x, the metal oxide film 31x, the moisture absorption film 25, and the stacked body 22 are removed all at once or in multiple steps using one resist mask. be exposed. The resist mask has, for example, an opening corresponding to the shape of the first recess 2241 in a plan view. Specifically, for example, each part of the light shielding film 33x, the insulating film 32x, the metal oxide film 31x, the moisture absorption film 25, and the laminate 22 is made of cyclobutane octafluoride (C ₄ F ₈ ), oxygen (O2), and It is removed by etching using an etching gas containing argon (Ar). Note that an etching gas other than the above etching gas is used as appropriate depending on the materials of the light shielding film 33x, the insulating film 32x, the metal oxide film 31x, and the moisture absorption film 25.

Note that in removing each part of the stacked body 22, the wiring arranged in the stacked body 22 may be used as an etching stopper.

FIG. 9 is a cross-sectional view for explaining a method of manufacturing a plurality of spacers 51a. Next, as shown in FIG. 9, a material layer 51x containing a material for forming the spacer 51a is formed on the laminate 22 and the protective layer 30x. The material layer 51x becomes a plurality of spacers 51 in a later process. A material layer 51x containing, for example, an inorganic material is formed by, for example, plasma CVD. The material layer 51x is formed to fill the contact hole 2240 and the first recess 2241.

FIG. 10 is a cross-sectional view for explaining a method of manufacturing a plurality of spacers 51a. Next, a portion of each of the material layer 51x, the light shielding film 33x, the insulating film 32x, and the metal oxide film 31x is removed by etching using a resist mask, for example. By removing a portion of the material layer 51x, a plurality of spacers 51 including the spacer 51a shown in FIG. 10 are formed. Further, by removing a portion of the light shielding film 33x, a plurality of light shielding films 33 are formed. By removing a portion of the insulating film 32x, a plurality of insulating films 32 are formed. A plurality of metal oxide films 31 are formed by removing a portion of the metal oxide film 31x.

For example, parts of the material layer 51x, the light shielding film 33x, and the insulating film 32x are removed all at once or in multiple steps using one resist mask. The resist mask has, for example, an opening corresponding to the shape excluding the plurality of spacers 51a in plan view.

Specifically, for example, a part of the material layer 51x is removed by etching using an etching gas containing, for example, cyclobutane octafluoride (C ₄ F ₈ ), oxygen (O 2 ), and argon (Ar). During this removal, the light shielding film 33x functions as an etching stopper. Further, for example, a portion of each of the light shielding film 33x and the insulating film 32x is removed by chemical dry etching using an etching gas containing tetrafluoromethane (CF4) and oxygen (O2), for example. During this removal, the metal oxide film 31x functions as an etching stopper. Further, after removing a portion of the light shielding film 33x and the insulating film 32x, the resist mask is removed. After that, a portion of the metal oxide film 31x is removed. In this removal, an etching solution or the like is used in which the etching rate of the material of the stacked body 22 is higher than the etching rate of the material of the metal oxide film 31x. Specifically, hydrofluoric acid is used to remove a portion of the metal oxide film 31x. For example, when the stacked body 22 is made of silicon oxide and the metal oxide film 31x is made of aluminum oxide, only the metal oxide film 31x can be efficiently removed by using hydrofluoric acid.

In addition, when removing a portion of the material layer 51x, the light shielding film 33x, the insulating film 32x, and the metal oxide film 31x, etching progresses in the vertical direction in the Z2 direction, and also in the direction crossing the Z direction. proceed. That is, the side walls of the light shielding film 33, the side walls of the insulating film 32, and the side walls of the metal oxide film 31x are each removed by side etching. Specifically, in plan view, a portion of the light shielding film 33 that overlaps with the outer edge of the spacer 51a, a portion of the insulating film 32 that overlaps with the outer edge of the spacer 51a, and a portion of the metal oxide film 31x that overlaps with the outer edge of the spacer 51a. The overlapping portion is removed by side etching.

Here, the spacer 51a has a second portion P2 that contacts the laminate 22. That is, the light shielding film 33x, the insulating film 32x, and the metal oxide film 31x are not present in the entire region between the spacer 51a and the stacked body 22. Since the spacer 51a has the second portion P2, the spacer 51a is less likely to peel off from the laminate 22 than when the spacer 51a does not have a portion that contacts the laminate 22. In particular, when the material layer 51x, the light shielding film 33x, the insulating film 32x, and the metal oxide film 31x contain different materials, side etching tends to proceed at their interfaces. Therefore, since the spacer 51a has the second portion P2, the spacer 51a becomes difficult to peel off from the laminate 22 even under the influence of side etching.

By the method described above, the spacer 51a made of an inorganic material can be manufactured particularly easily and reliably. Further, in manufacturing the spacer 51a, damage to the pixel electrode 26 can be particularly effectively suppressed. Moreover, it is possible to suppress the spacer 51a from peeling off from the laminate 22.

Although not shown, after the spacers 51a are formed, the coat layer 28 is formed to cover the spacers 51a. The coat layer 28 is formed by, for example, an ALD (Atomic Layer Deposition) method. In forming the coat layer 28, the surface of the pixel electrode 26 is appropriately arranged obliquely with respect to the vapor deposition source. Thereby, the coating layer 28 can be suitably formed not only on the surface of the pixel electrode 26 but also on the wall surface of the spacer 51a. The coat layer 28 is formed of an inorganic material containing silicon, for example. In particular, by forming the coating layer 28 from silicon oxide such as silicon dioxide, a homogeneous and sufficiently thin coating layer 28 can be formed by the ALD method.

Although not shown, after the coat layer 28 is formed, a first alignment film 29 is formed by obliquely depositing a film containing silicon oxide or the like on the coat layer 28 . By forming the first alignment film 29 on the coat layer 28, the adhesion of the first alignment film 29 to the pixel electrode 26 and the spacer 51 can be improved compared to the case where the coat layer 28 is not provided. In order to improve adhesion, it is particularly preferable that the coat layer 28 and the first alignment film 29 contain the same material. Note that in the formation of the first alignment film 29 as well, similarly to the formation of the coat layer 28, the surface of the pixel electrode 26 is appropriately arranged obliquely with respect to the vapor deposition source.

2. Modifications The embodiments illustrated above can be modified in various ways. Specific modifications that can be applied to the above-described embodiments are illustrated below. Two or more aspects arbitrarily selected from the examples below may be combined as appropriate to the extent that they do not contradict each other.

In the embodiment described above, the spacer 51a contacts the stack 22. However, an arbitrary layer may be interposed between the spacer 51a and the laminate 22. In that case, the layer preferably contains the same material as the spacer 51a in order to improve the adhesion between the spacer 51a and the laminate 22. In addition, the layer preferably includes the same material as the material of the laminate 22.

In the embodiment described above, the first portion P1 of the spacer 51a is spaced apart from the pixel electrode 26. However, the first portion P1 may be in contact with a portion of the pixel electrode 26.

In the embodiment described above, the surface of the first recess 2241 of the laminate 22 is smooth. However, the surface of the first recess 2241 may be a rough surface. From another perspective, the contact surface of the laminate 22 with the spacer 51a may be a rough surface. By having a rough surface, the adhesion between the laminate 22 and the spacer 51a can be further improved compared to a smooth surface.

The plurality of spacers 51 are arranged one-to-one on the plurality of pixel electrodes 26. However, for example, one spacer 51 may be arranged for two or more pixel electrodes 26. Further, two or more spacers 51 may be arranged for one pixel electrode 26.

In the embodiment described above, the stacked body 22, the plurality of pixel electrodes 26, and the metal oxide film 31 are arranged in this order. However, the stacked body 22, the metal oxide film 31, and the plurality of pixel electrodes 26 may be arranged in this order. That is, the metal oxide film 31 may be located between the pixel electrode 26 and the moisture absorption film 25. In this case, the metal oxide film 31 preferably contains aluminum oxide. By including aluminum oxide, the metal oxide film 31 can reduce the difference between the refractive index of the stacked body 22 and the refractive index of the pixel electrode 26. Therefore, interface reflection between the stacked body 22 and the pixel electrode 26 can be reduced. Specifically, when the laminate 22 is made of silicon oxide and the pixel electrode 26 is made of ITO, the refractive index of the metal oxide film 31 is higher than the refractive index of the laminate 22, and the pixel electrode 26 is made of ITO. lower than the refractive index at That is, the refractive indexes of the stacked body 22, the metal oxide film 31, and the pixel electrode 26 increase in this order. Therefore, interfacial reflection between the stacked body 22 and the pixel electrode 26 can be suppressed compared to the case where the metal oxide film 31 is not provided. Therefore, a decrease in light utilization efficiency can be suppressed. In this embodiment, the moisture absorbing film 25 is provided on the laminate 22, but the refractive indexes of the moisture absorbing film 25, the metal oxide film 31, and the pixel electrode 26 also increase in this order.

In the above embodiment, the transistor 23 is a TFT, but the transistor 23 is not limited to a TFT, and may be a MOSFET (metal-oxide-semiconductor field-effect transistor), for example.

Although the electro-optical device 100 of an active matrix type is illustrated in the above-described embodiment, the driving method of the electro-optical device is not limited thereto, and may be, for example, a passive matrix type.

3. Electronic Device The electro-optical device 100 can be used in various electronic devices.

FIG. 11 is a perspective view showing a personal computer 2000, which is an example of an electronic device. The personal computer 2000 includes an electro-optical device 100 that displays various images, a main body section 2010 in which a power switch 2001 and a keyboard 2002 are installed, and a control section 2003. The control unit 2003 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100.

FIG. 12 is a plan view showing a smartphone 3000, which is an example of an electronic device. The smartphone 3000 includes an operation button 3001, an electro-optical device 100 that displays various images, and a control unit 3002. The screen content displayed on the electro-optical device 100 is changed in accordance with the operation of the operation button 3001. The control unit 3002 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100.

FIG. 13 is a schematic diagram showing a projector that is an example of an electronic device. The projection display device 4000 is, for example, a three-panel projector. The electro-optical device 1r is an electro-optical device 100 corresponding to a red display color, the electro-optical device 1g is an electro-optical device 100 corresponding to a green display color, and the electro-optical device 1b is an electro-optical device 100 corresponding to a blue display color. This is an electro-optical device 100 corresponding to. That is, the projection display device 4000 includes three electro-optical devices 1r, 1g, and 1b corresponding to red, green, and blue display colors, respectively. The control unit 4005 includes, for example, a processor and a memory, and controls the operation of the electro-optical device 100.

The illumination optical system 4001 supplies the red component r of the light emitted from the illumination device 4002, which is a light source, to the electro-optical device 1r, the green component g to the electro-optical device 1g, and the blue component b to the electro-optical device 1b. supply to. Each of the electro-optical devices 1r, 1g, and 1b functions as a light modulator such as a light valve that modulates each monochromatic light supplied from the illumination optical system 4001 according to a displayed image. A projection optical system 4003 combines the light emitted from each electro-optical device 1r, 1g, and 1b and projects the combined light onto a projection surface 4004.

The above electronic device includes the electro-optical device 100 described above and a control section 2003, 3002, or 4005. As described above, in the electro-optical device 100, a decrease in the aperture ratio is suppressed, and the distance between the element substrate 2 and the counter substrate 4 is stabilized. Therefore, the display quality of the personal computer 2000, smartphone 3000, or projection display device 4000 can be improved.

Note that electronic devices to which the electro-optical device of the present invention is applied are not limited to the exemplified devices, but include, for example, PDAs (Personal Digital Assistants), digital still cameras, televisions, video cameras, car navigation devices, and in-vehicle devices. Examples include displays, electronic notebooks, electronic paper, calculators, word processors, workstations, videophones, and POS (Point of Sale) terminals. Further, examples of electronic devices to which the present invention is applied include printers, scanners, copiers, video players, devices equipped with touch panels, and the like.

Although the present invention has been described above based on the preferred embodiments, the present invention is not limited to the above-described embodiments. Further, the configuration of each part of the present invention can be replaced with any configuration that performs the same function as in the above-described embodiment, or any configuration can be added.

Further, in the above description, a liquid crystal device was described as an example of the electro-optical device of the present invention, but the electro-optical device of the present invention is not limited to this. For example, the electro-optical device of the present invention can be applied to an image sensor, etc. Further, the present invention can be applied to a display panel using a light emitting element such as an organic EL (electro luminescence), an inorganic EL, or a light emitting polymer, in the same manner as in the above-described embodiments. Further, the present invention can also be applied to an electrophoretic display panel using microcapsules containing a colored liquid and white particles dispersed in the liquid, in the same manner as in the above-described embodiments.

2...Element substrate, 4...Counter substrate, 8...Sealing member, 9...Liquid crystal layer, 11...Scanning line drive circuit, 12...Data line drive circuit, 14...External terminal, 15...Leading wiring, 21...First group Material, 22... Laminate, 23... Transistor, 25... Moisture absorbing film, 26... Pixel electrode, 28... Coating layer, 29... First alignment film, 30... Protective part, 31... Metal oxide film, 32... Insulating film, 33... Light shielding film, 41... Second base material, 42... Insulating film, 45... Common electrode, 46... Second alignment film, 51... Spacer, 51a... Spacer, 100... Electro-optical device, 221... Insulating layer, 222... Insulating layer, 223... Insulating layer, 224... Insulating layer, 240... Storage capacitor, 241... Light blocking section, 244... Scanning line, 245... Capacitance line, 246... Data line, 249... Relay electrode, 260... Contact section, 511... Tip surface, 2240...Contact hole, 2241...First recess, 5111...Second recess, A10...Display area, A11...Transparent area, A12...Wiring area, A20...Peripheral area, P...Pixel, P1...First portion , P2...second part.

Claims (8)

a first substrate having a laminate including a plurality of insulating layers, a pixel electrode, and a relay electrode connected to the pixel electrode via a contact hole ;
a second substrate having a common electrode;
an electro-optic layer disposed between the pixel electrode and the common electrode;
a spacer that defines a distance between the pixel electrode and the common electrode and is disposed at a position overlapping the contact hole in plan view ;
a protective portion disposed between the pixel electrode and the spacer , and disposed at a position overlapping the contact hole in a plan view ;
The spacer has a first portion that overlaps the pixel electrode and the protection portion when viewed from the thickness direction of the first substrate, and a second portion that does not overlap the pixel electrode when viewed from the thickness direction,
The electro -optical device is characterized in that the protection portion includes a metal oxide film, an insulating film, and a light shielding film arranged in this order from the pixel electrode side . The electro-optical device according to claim 1, wherein a portion of the protection portion is disposed within the contact hole. The electro-optical device according to claim 1, wherein the spacer is made of an inorganic material. The laminate includes the inorganic material,
The electro-optical device according to claim 3 , wherein the second portion contacts the laminate. 5. The electro-optical device according to claim 3, wherein the inorganic material is silicon oxide or silicon oxynitride. 6. The electro-optical device according to claim 1, wherein the laminate has a first recess in which a part of the second portion is disposed. The spacer has a tip surface,
7. The electro-optical device according to claim 1, wherein the tip surface has a second recess. The electro-optical device according to any one of claims 1 to 7 ,
An electronic device comprising: a control section that controls the operation of the electro-optical device.

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