JP7329679B2 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents

基板処理装置、半導体装置の製造方法およびプログラム Download PDF

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JP7329679B2
JP7329679B2 JP2022510455A JP2022510455A JP7329679B2 JP 7329679 B2 JP7329679 B2 JP 7329679B2 JP 2022510455 A JP2022510455 A JP 2022510455A JP 2022510455 A JP2022510455 A JP 2022510455A JP 7329679 B2 JP7329679 B2 JP 7329679B2
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gas
gas supply
processing chamber
pipe
flow rate
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JPWO2021193480A5 (https=
JPWO2021193480A1 (https=
Inventor
紀之 磯辺
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2022510455A 2020-03-26 2021-03-21 基板処理装置、半導体装置の製造方法およびプログラム Active JP7329679B2 (ja)

Applications Claiming Priority (3)

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JP2020056120 2020-03-26
JP2020056120 2020-03-26
PCT/JP2021/011557 WO2021193480A1 (ja) 2020-03-26 2021-03-21 基板処理装置、半導体装置の製造方法およびプログラム

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JPWO2021193480A1 JPWO2021193480A1 (https=) 2021-09-30
JPWO2021193480A5 JPWO2021193480A5 (https=) 2022-11-22
JP7329679B2 true JP7329679B2 (ja) 2023-08-18

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WO (1) WO2021193480A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086392A (ja) 2004-09-17 2006-03-30 Tokyo Electron Ltd 半導体製造装置及びそのメンテナンス方法
JP2009016799A (ja) 2007-06-07 2009-01-22 Hitachi Kokusai Electric Inc 基板処理装置
WO2017033979A1 (ja) 2015-08-26 2017-03-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086392A (ja) 2004-09-17 2006-03-30 Tokyo Electron Ltd 半導体製造装置及びそのメンテナンス方法
JP2009016799A (ja) 2007-06-07 2009-01-22 Hitachi Kokusai Electric Inc 基板処理装置
WO2017033979A1 (ja) 2015-08-26 2017-03-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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WO2021193480A1 (ja) 2021-09-30
JPWO2021193480A1 (https=) 2021-09-30

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