WO2021193480A1 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents

基板処理装置、半導体装置の製造方法およびプログラム Download PDF

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Publication number
WO2021193480A1
WO2021193480A1 PCT/JP2021/011557 JP2021011557W WO2021193480A1 WO 2021193480 A1 WO2021193480 A1 WO 2021193480A1 JP 2021011557 W JP2021011557 W JP 2021011557W WO 2021193480 A1 WO2021193480 A1 WO 2021193480A1
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Prior art keywords
gas supply
gas
raw material
pipe
processing chamber
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Ceased
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PCT/JP2021/011557
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English (en)
French (fr)
Japanese (ja)
Inventor
紀之 磯辺
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to JP2022510455A priority Critical patent/JP7329679B2/ja
Publication of WO2021193480A1 publication Critical patent/WO2021193480A1/ja
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Definitions

  • This disclosure relates to a substrate processing apparatus, a manufacturing method and a program of a semiconductor apparatus.
  • a process of forming a film on a substrate housed in a processing chamber may be performed.
  • the film to be formed include a film such as a metal oxide film (see, for example, Patent Document 1).
  • the liquid raw material may be vaporized and used as a vaporized gas, but when the vaporized gas is supplied to the treatment chamber and then exhausted, it is thermally decomposed in the exhaust pipe and subordinated in the exhaust pipe.
  • the product may accumulate or the vaporized gas may reliquefy and cause clogging in the exhaust pipe.
  • the vaporized raw material remaining in the piping is thermally decomposed, changed with time, and reliquefied, and as a result, foreign matter is generated and adheres to the surface of the film, and the film formation rate is a desired value. There is a possibility that the film quality will change from the above.
  • An object of the present disclosure is a technique for stably forming a film by suppressing thermal decomposition and reliquefaction of the vaporized gas in the exhaust pipe when the liquid raw material is vaporized and used as the vaporized gas to form a film on the substrate.
  • a raw material gas supply unit that supplies raw material gas to the inside of the processing chamber
  • An inert gas supply unit that supplies the first inert gas to the inside of the processing chamber
  • a bypass pipe for connecting the raw material gas supply unit and the exhaust pipe of the vacuum exhaust unit is provided.
  • the raw material gas supply unit is located in the middle of the liquid metal raw material tank, the first gas supply pipe connecting the liquid metal raw material tank and the processing chamber, and the liquid metal raw material.
  • a first valve arranged on the side closer to the tank and a second valve arranged in the middle of the first gas supply pipe and closer to the processing chamber than the first valve are provided.
  • the bypass pipe is connected to the first gas supply pipe of the raw material gas supply unit between the first valve and the second valve, and the first gas supply pipe is connected to the exhaust. Techniques for connecting to pipes are provided.
  • a technique capable of stably forming a film by suppressing thermal decomposition and reliquefaction of the vaporized gas in an exhaust pipe is provided. It will be possible to provide.
  • FIG. 1 is a cross-sectional view taken along the line AA of FIG. It is the schematic which shows the piping relation of the substrate processing apparatus shown in FIG. It is a block diagram which shows the structure of the controller which the substrate processing apparatus shown in FIG. 1 has. It is a flowchart which shows the substrate processing process in one Embodiment of this disclosure. It is a time chart which shows the example of switching the supply of a plurality of gases of the film forming process in one Embodiment of this disclosure.
  • the vaporized gas obtained by vaporizing an organic raw material (organic compound), which is a liquid raw material having a particularly low self-decomposition temperature is easily thermally decomposed to form a by-product even at a low temperature. Further, among the liquid raw materials, the liquid raw material having a particularly low vapor pressure is more likely to be reliquefied as the temperature becomes lower.
  • the Disclosers have realized stable film formation by reducing the risk of fluctuation by purging out the vaporized raw material by purging the inside of the pipe after the film formation process or each time the pipe is used. The details of this technology will be described below.
  • the substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system).
  • the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
  • a reaction tube 203 is arranged concentrically with the heater 207.
  • the reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end open.
  • a manifold 209 is arranged concentrically with the reaction tube 203.
  • the manifold 209 is made of a metal such as stainless steel (SUS), and is formed in a cylindrical shape with open upper and lower ends.
  • An O-ring 220 as a sealing member is provided between the upper end of the manifold 209 and the reaction tube 203.
  • the reaction tube 203 is installed perpendicular to the heater 207 by supporting the manifold 209 on the heater base.
  • a processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209.
  • a processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate the wafer 200 as a substrate in a state of being arranged in multiple stages in the vertical direction in a horizontal posture by a boat 217 described later.
  • Nozzles 410 and 420 are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209.
  • Gas supply pipes 335 and 516 are connected to the nozzles 410 and 420, respectively.
  • the gas supply pipes 335 and 516 function as a gas supply line.
  • Nozzles 410 and 420 may be included in the gas supply line.
  • the processing furnace 202 of the present embodiment is not limited to the above-described embodiment. The number of nozzles and the like is appropriately changed as necessary.
  • the reaction pipe 203 is provided with an exhaust pipe 241 as an exhaust flow path for exhausting the atmosphere in the processing chamber 201.
  • a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 242 as an exhaust valve (pressure adjusting unit) are connected to the exhaust pipe 241. There is.
  • the APC valve 242 is connected to the vacuum pump 244 via the exhaust pipe 243.
  • the APC valve 242 can perform vacuum exhaust and vacuum exhaust stop in the processing chamber 201 by opening and closing the valve with the vacuum pump 244 operating, and further, with the vacuum pump 244 operating, the APC valve 242 can perform vacuum exhaust and vacuum exhaust stop.
  • the exhaust system is mainly composed of the exhaust pipes 241 and 243, the APC valve 242, and the pressure sensor 245.
  • the vacuum pump 244 may be included in the exhaust system.
  • a seal cap 219 is provided as a furnace palate body that can airtightly close the lower end opening of the manifold 209.
  • An O-ring 220 as a seal member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the seal cap 219.
  • a rotation mechanism 267 for rotating the boat 217 which will be described later, is installed.
  • the rotation shaft 255 of the rotation mechanism 267 is connected to the boat 217 through the seal cap 219, and is configured to rotate the wafer 200 by rotating the boat 217.
  • the seal cap 219 is configured to be vertically lifted and lowered by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203.
  • the boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by raising and lowering the seal cap 219.
  • the boat elevator 115 is configured as a transport device (convey mechanism) for transporting the boat 217, that is, the wafer 200, into and out of the processing chamber 201.
  • the boat 217 as a substrate support supports a plurality of wafers, for example 25 to 200 wafers, in a horizontal position and vertically aligned with each other, that is, in a multi-stage manner. It is configured to be loaded (arranged, placed) at intervals.
  • the boat 217 is made of a heat resistant material such as quartz or SiC.
  • FIG. 2 A cross section of the reaction tube 203 and the heater 207 in FIG. 1 is shown in FIG.
  • a temperature sensor 263 as a temperature detector is installed in the reaction tube 203.
  • the temperature sensor 263 is L-shaped like the nozzles 410 and 420, and is provided along the inner wall of the reaction tube 203.
  • FIG. 3 shows the configuration of the gas supply system that supplies gas to the processing chamber 201 inside the reaction tube 203.
  • the gas supply pipe 516 is a raw material gas supply system for supplying the raw material gas to the processing chamber 201.
  • the gas supply pipe 335 is a reaction gas supply system that supplies the reaction gas to the processing chamber 201.
  • the raw material gas supply system includes a liquid metal raw material tank (liquid raw material vaporization tank, liquid raw material vaporization container) 310 for accommodating the liquid metal raw material 301.
  • a gas supply system for supplying a carrier gas a gas supply pipe 311 for passing a carrier gas (inert gas) from a gas supply source (not shown) and a carrier gas passing through the gas supply pipe 311
  • a mass flow controller (MFC) 312, which is a flow controller for adjusting the flow rate, and a valve 313 for turning on / off the flow of carrier gas through the gas supply pipe 311 are connected.
  • MFC mass flow controller
  • a gas supply pipe 315 through which the generated raw material gas is passed is connected, and the liquid metal raw material tank A valve 314 for turning on / off the flow of the raw material gas of the gas supply pipe 315 and a valve 318 are attached in the order of proximity to 310.
  • the gas supply pipe 315 is connected to the gas supply pipe 516.
  • a gas supply pipe 316 for connecting the gas supply pipe 311 and the gas supply pipe 315 is provided outside the valve 313 and the valve 314 with respect to the liquid metal raw material tank 310, and is provided in the middle of the gas supply pipe 316. Is equipped with a valve 317 that turns on and off the flow of carrier gas through the gas supply pipe 316.
  • a bypass pipe 320 for connecting the gas supply pipe 315 and the exhaust pipe 243 of the exhaust system is provided, and the valve 321 arranged on the side of the bypass pipe 320 near the gas supply pipe 315 and the exhaust pipe 243 of the bypass pipe 320 are provided.
  • a valve 322 arranged on the near side is attached.
  • the bypass pipe 320 is connected to the gas supply pipe 315 between the valve 318 and the valve 314.
  • a gas supply pipe 510 for supplying an inert gas supplied from a gas supply source (not shown) is also connected to the gas supply pipe 516.
  • the gas supply pipe 510 is connected to an MFC 512 that adjusts the flow rate of the inert gas supplied from a gas supply source (not shown) and a valve 514 that turns on / off the flow of the inert gas.
  • the reaction gas supply system includes a liquid raw material tank 330 for accommodating the liquid raw material 302.
  • the liquid raw material tank 330 has a gas supply pipe 331 through which a carrier gas (inert gas) is passed from a gas supply source (not shown), and a flow rate of the carrier gas through the gas supply pipe 331.
  • a mass flow controller (MFC) 332 for adjusting the gas and a valve 333 for turning on / off the flow of carrier gas through the gas supply pipe 311 are connected.
  • a gas supply pipe 335 is connected as a pipe for passing the generated reaction gas as a discharge system of a gas containing oxygen (hereinafter referred to as a reaction gas or an oxygen-containing gas) as the liquid raw material 302 generated from the liquid raw material tank 330.
  • a valve 334 for turning on / off the flow of the reaction gas is attached in the order of proximity to the liquid raw material tank 330.
  • the gas supply pipe 335 is connected to the nozzle 410.
  • the nozzle 410 is configured as an L-shaped nozzle, and its horizontal portion is provided so as to penetrate the side wall of the manifold 209 and the reaction tube 203.
  • the vertical portion of the nozzle 410 loads the wafer 200 in the annular space between the reaction tube 203 and the wafer 200 in a plan view along the upper part of the inner wall of the reaction tube 203 from the lower part. It is provided so as to rise upward in the direction and extend.
  • the nozzle 420 is also arranged in the same shape as the nozzle 410.
  • a plurality of gases for which gas is supplied are provided at a height corresponding to the wafer 200 loaded on the boats 217 on the side surfaces of the nozzles 410 and 420 (height corresponding to the loading area of the wafer 200).
  • Supply holes 410a and 420a are provided, respectively.
  • the gas supply holes 410a and 420a are opened so as to face the center of the reaction tube 203, and gas can be supplied toward the wafer 200.
  • a plurality of gas supply holes 410a and 420a are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch so as to correspond to the wafer 200 loaded on the boat 217.
  • the gas supply holes 410a and 420a are not limited to the above-described form.
  • the opening area may be gradually increased from the lower portion (upstream side) to the upper portion (downstream side) of the nozzles 410 and 420. This makes it possible to make the flow rate of the gas supplied from the gas supply holes 410a and 420a more uniform.
  • the processing gas (raw material gas) from the gas supply pipe 516 is, for example, a metal raw material containing a metal element and containing C (C-containing), that is, an organic raw material.
  • the raw material gas (organic metal compound, organic titanium raw material) is supplied into the processing chamber 201 inside the reaction tube 203 via the nozzle 420.
  • the organic raw material is stored in the liquid metal raw material tank 310 as the liquid metal raw material 301 in a liquid state.
  • the carrier gas which is an inert gas, is supplied from the gas supply pipe 311 into the liquid metal raw material tank 310 via the MFC 312 and the valve 313.
  • a temperature adjusting mechanism for example, heating by a jacket heater, cooling by a Pelche element, etc. for adjusting the temperature of the liquid metal raw material tank 310 is provided on the outside of the liquid metal raw material tank 310, and the liquid metal raw material tank 310
  • the liquid metal raw material supplied to the above is set to a predetermined temperature by a temperature control mechanism, or the supply flow rate of the inert gas serving as a carrier gas is set to a predetermined flow rate, or the supply flow rate of the temperature control mechanism and the inert gas.
  • the raw material gas flows to the gas supply pipe 315 at a predetermined flow rate.
  • the term "raw material gas” when the term "raw material gas” is used, it means “raw material gas in a liquid state", “raw material gas in a gaseous state", or both of them. May be done.
  • an oxygen (O) -containing gas as a processing gas is supplied into the processing chamber 201 via the nozzle 420.
  • the oxygen-containing gas is contained in the liquid raw material tank 330 as a liquid raw material 302 in a liquid state.
  • the liquid raw material 302 is vaporized by supplying the carrier gas from the gas supply pipe 331 into the liquid raw material tank 330 via the MFC 332 and the valve 333. Then, the oxygen-containing gas as the vaporized gas is supplied to the gas supply pipe 335.
  • reaction gas oxygen-containing gas
  • reaction gas in a liquid state oxygen-containing gas
  • reaction gas in a gaseous state oxygen-containing gas
  • the inert gas is supplied into the processing chamber 201 inside the reaction pipe 203 via the MFC512 valve 514, the gas supply pipe 516, and the nozzle 420.
  • the controller 121 which is a control unit (control means), is a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. It is configured.
  • the RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus 121e.
  • An input / output device 122 configured as, for example, a touch panel is connected to the controller 121.
  • the storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
  • a control program for controlling the operation of the substrate processing device, a process recipe in which the procedures and conditions for substrate processing described later are described, and the like are readablely stored.
  • the process recipes are combined so that the controller 121 can execute each procedure in the film forming process described later and obtain a predetermined result, and functions as a program.
  • this process recipe, control program, etc. are collectively referred to as a program.
  • a process recipe is also simply referred to as a recipe.
  • the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.
  • the I / O port 121d includes the above-mentioned MFC 312,332,512, valve 313,314,317,318,321,322,333,334,514, pressure sensor 245, APC valve 242, vacuum pump 244, temperature sensor 263, and the like. It is connected to a heater 207, a rotation mechanism 267, a boat elevator 115, a shutter opening / closing mechanism 115s, and the like.
  • the CPU 121a is configured to read and execute a control program from the storage device 121c and read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like.
  • the CPU 121a adjusts the flow rate of various gases by the MFC 312,332,512, opens and closes the valves 313, 314, 317, 318, 321, 322, 333, 334, 514, and the APC valve so as to follow the contents of the read recipe. Opening and closing operation of 242 and pressure adjustment operation by APC valve 242 based on pressure sensor 245, start and stop of vacuum pump 244, temperature adjustment operation of heater 207 based on temperature sensor 263, rotation and rotation speed adjustment of boat 217 by rotation mechanism 267. It is configured to control the operation, the ascending / descending operation of the boat 217 by the boat elevator 115, and the like.
  • the controller 121 is stored in an external storage device (for example, magnetic tape, magnetic disk such as flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) 123.
  • an external storage device for example, magnetic tape, magnetic disk such as flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card.
  • the above-mentioned program can be configured by installing it on a computer.
  • the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
  • recording medium When the term recording medium is used in the present specification, it may include only the storage device 121c alone, it may include only the external storage device 123 alone, or it may include both of them.
  • the program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.
  • the word “wafer” when used in the present specification, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof). “(That is, a wafer including a predetermined layer, film, etc. formed on the surface) may be used.
  • the term “wafer surface” when used in the present specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.
  • the term “wafer” is also used in the present specification as if the term “wafer” is used.
  • a plurality of wafers 200 are carried into the processing chamber 201 (boat load). Specifically, when a plurality of wafers 200 are loaded (wafer charged) into the boat 217, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 as shown in FIG. It is carried into the processing chamber 201. In this state, the seal cap 219 is in a state of closing the lower end opening of the reaction tube 203 via the O-ring 220.
  • the inside of the processing chamber 201 is heated by the heater 207 so as to reach a desired temperature.
  • the amount of electricity supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment).
  • the heating in the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
  • the valve 313 is opened to supply the carrier gas whose flow rate is controlled by the MFC from the gas supply pipe 311 to the inside of the liquid metal raw material tank 310 accommodating the liquid metal raw material 301.
  • the raw material gas generated inside the liquid metal raw material tank 310 is opened in the valves 314 and 318 and flows into the gas supply pipe 315.
  • the raw material gas has the property of being difficult to vaporize and easily decomposing.
  • the raw material gas flowing through the gas supply pipe 315 reaches the nozzle 420 through the gas supply pipe 516 and flows out from the gas supply hole 410a of the nozzle 410 into the processing chamber 201 (the raw material gas in the 1st cycle of FIG. 6 is turned on). 601).
  • the raw material gas that has flowed out into the processing chamber 201 passes between the wafers 200 loaded on the boat 217 and flows toward the exhaust pipe 241 to supply the raw material gas to the wafer 200.
  • the APC valve 242 is appropriately adjusted to set the pressure in the processing chamber 201 to a (predetermined) pressure in the range of, for example, 1 to 1200 Pa, preferably 10 to 100 Pa, and more preferably 40 to 60 Pa. If the pressure is higher than 1200 Pa, the residual gas that will be described later may not be sufficiently removed, and if the pressure is lower than 1 Pa, the reaction rate of the raw material gas may not be sufficiently obtained.
  • a pressure in the range of, for example, 1 to 1200 Pa, preferably 10 to 100 Pa, and more preferably 40 to 60 Pa. If the pressure is higher than 1200 Pa, the residual gas that will be described later may not be sufficiently removed, and if the pressure is lower than 1 Pa, the reaction rate of the raw material gas may not be sufficiently obtained.
  • the numerical value is described as, for example, 1 to 1200 Pa, it means that the lower limit value and the upper limit value are included in the range, and means 1 Pa or more and 1200 Pa or less. The same is true not only for pressure, but for all other numbers described
  • the supply flow rate of the raw material gas is, for example, a (predetermined) flow rate within the range of 0.008 to 0.3 slm.
  • the supply flow rate of the carrier gas controlled by the MFC 522 is, for example, a (predetermined) flow rate in the range of 0.1 to 40 slm.
  • the gas supply time (irradiation time) for supplying the raw material gas to the wafer 200 is, for example, a (predetermined) time in the range of 0.1 to 60 seconds.
  • the temperature of the heater 207 at this time is a (predetermined) temperature in which the temperature of the wafer 200 (first temperature) is, for example, 55 to 250 ° C., preferably 55 to 130 ° C., more preferably 70 to 100 ° C. Set the temperature so that If the temperature is higher than 130 ° C, the raw material gas may be thermally decomposed and pulverized, and the pulverized by-products may be easily taken into the film. Depending on the balance with other process conditions, the temperature is 250. If the temperature is higher than °C, even the raw material gas in the liquid state may be decomposed.
  • the gas supply pipe 510 for supplying the raw material gas to the processing chamber 201 may be set to be higher than the temperature of the liquid metal raw material tank 310 (for example, 40 ° C.). By doing so, it is possible to prevent the liquefaction of the raw material gas in the gas supply pipe 510.
  • the gas flowing in the processing chamber 201 at this time is the raw material gas.
  • a metal-containing layer containing a metal is formed on the wafer 200.
  • the valve 514 is opened to allow the inert gas to flow into the gas supply pipe 510.
  • the flow rate of the inert gas flowing in the gas supply pipe 510 is adjusted by the MFC 512.
  • the flow-adjusted inert gas reaches the nozzle 420 through the gas supply pipe 516 and is supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420 (the inert gas in the 1st cycle of FIG. 6 (processing chamber 201). ) Corresponds to 611 on), and is exhausted from the exhaust pipe 241.
  • the inert gas acts as a purge gas, which can enhance the effect of removing the unreacted raw material gas remaining in the treatment chamber 201 or the raw material gas after contributing to the formation of the metal-containing layer from the treatment chamber 201. ..
  • the valves 313 and 314 are closed to open the valve 317, and the valves 321 and 322 of the bypass pipe 320 are further opened.
  • the inert gas supplied from the gas supply pipe 311 flows from the gas supply pipe 315 to the bypass pipe 320 through the gas supply pipe 316 in a state where the flow rate is adjusted by the MFC 312, and flows from the exhaust pipe 243 to the vacuum pump 244. (Corresponding to the state of 621 in which the inert gas (gas supply pipe 315-bypass pipe 320) in the 1st cycle of FIG. 6 is on).
  • the components of the raw material gas remaining inside the gas supply pipe 315 can also be exhausted and removed through the bypass pipe 320. can.
  • the raw material gas component remaining between the valves 314 and 318 inside the gas supply pipe 315 at the stage of completing the raw material gas supply step (S5041) is reliquefied when the raw material gas is supplied in the next cycle.
  • thermal decomposition it is possible to prevent the particles from being carried into the processing chamber 201 and becoming fine particles (particles) that adhere to the surface of the wafer 200.
  • the flow rate of the inert gas supplied from the gas supply pipe 315 to the bypass pipe 320 may be reduced after a lapse of a predetermined time (for example, 30 to 70% of the gas supply time). By doing so, it is possible to create a differential pressure and improve the efficiency of removing the raw material gas remaining inside the gas supply pipe 315 by making a difference in the flow rate of the inert gas.
  • a predetermined time for example, 30 to 70% of the gas supply time
  • the flow rate of the inert gas supplied from the gas supply pipe 315 to the bypass pipe 320 may be changed so that the flow rate of the inert gas is different after a lapse of a predetermined time.
  • the flow rate of the inert gas supplied from the gas supply pipe 315 to the bypass pipe 320 may be increased after a lapse of a predetermined time. In this case as well, it is possible to create a differential pressure and improve the efficiency of removing the raw material gas remaining inside the gas supply pipe 315.
  • the flow rate of the inert gas exhausted through the bypass pipe 320 adjusted by the MFC 312 is in the range of 0.1 to 10 slm, and from the nozzle 420 into the processing chamber 201 through the gas supply pipe 516 adjusted by the MFC 512.
  • the flow rate of the fed inert gas is set to be less than 0.5 to 30 slm. That is, the flow rate of the inert gas supplied to the bypass pipe 320 is made smaller than the flow rate of the inert gas supplied to the processing chamber 201. This makes it possible to prevent the inert gas exhausted through the bypass pipe 320 from wrapping around into the processing chamber 201 and hindering the discharge of the raw material gas remaining in the processing chamber 201. Further, it is possible to prevent the raw material gas remaining in the processing chamber 201 from flowing back into the bypass pipe 320.
  • reaction gas supply step S5043 Next, after the inert gas is allowed to flow through the MFCs 312 and 512 for a predetermined time, the valves 317 and 514 are closed and the valves 333 and 324 are opened.
  • the inert gas flows from the gas supply source (not shown) through the gas supply pipe 331, and the liquid raw material tank 330 containing the liquid raw material 302 is housed in a state where the flow rate is adjusted by the MFC 332. Is supplied to.
  • the oxygen-containing gas which is a reaction gas generated from the liquid raw material 302 by supplying the carrier gas to the liquid raw material tank 330, reaches the nozzle 410 from the gas supply pipe 335 through the valve 334, and reaches the gas supply hole of the nozzle 410. It is supplied from 410a into the processing chamber 201 (corresponding to the state of 631 in which the oxygen-containing gas in the 1st cycle of FIG. 6 is on).
  • the APC valve 242 When flowing the oxygen-containing gas, the APC valve 242 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 1 to 1200 Pa, preferably 10 to 100 Pa, more preferably 30 to 50 Pa (predetermined). ) Pressure. If the pressure is higher than 1200 Pa, the residual gas that will be described later may not be sufficiently removed, and if the pressure is lower than 1 Pa, a sufficient film formation rate may not be obtained.
  • the supply flow rate of oxygen gas is, for example, a (predetermined) flow rate within the range of 1 to 80 slm, preferably 5 to 40 slm, and more preferably 10 to 30 slm.
  • the larger the flow rate the more the uptake of impurities derived from the raw material gas into the metal oxide film can be reduced, which is preferable.
  • the flow rate is more than 40 slm, the residual gas described later may not be sufficiently removed.
  • the gas flowing in the processing chamber 201 at this time is an oxygen-containing gas.
  • the oxygen-containing gas reacts with the metal-containing layer formed on the wafer 200 in the raw material gas supply step, and a metal oxide layer containing metal and oxygen is formed on the wafer 200.
  • reaction gas removal step S5044 After the metal oxide layer is formed, the valves 333 and 334 are closed to stop the supply of the oxygen-containing gas.
  • the valve 514 is opened, and the inert gas supplied from the gas supply source (not shown) is sent to the nozzle 420 through the gas supply pipe 510 and the gas supply pipe 516 with the flow rate adjusted by the MFC 512.
  • It is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410 (corresponding to 612 in which the inert gas (processing chamber 201) gas in the 1st cycle of FIG. 6 is on).
  • the oxygen-containing gas remaining in the treatment chamber 201 after contributing to the formation of the unreacted or metal oxide layer is excluded from the treatment chamber 201.
  • S5045 By performing the cycle of sequentially performing the above-mentioned raw material gas supply step (S5041), raw material gas removal step (S5042), reaction gas supply step (S5043), and reaction gas supply step (S5044) one or more times (predetermined number of times) (S5045). ), That is, the processes from S5041 to S5044 are regarded as one cycle, and by executing these processes for n1 cycles (n1 is an integer of 1 or more), a predetermined thickness (for example, 0.05 to 100 nm) is applied on the wafer 200. ) Form a metal oxide film.
  • an inert gas is supplied between the gas supply pipe 315 and the bypass pipe 320 to remove the component of the raw material gas remaining inside the gas supply pipe 315.
  • the processing of 621 is performed every cycle, but this may be performed every n cycles as shown in 721 of the time chart of FIG. 7.
  • the n-cycle may be in the middle of forming the metal oxide film, or may be after the formation of the metal oxide film is completed.
  • an inert gas is supplied between the gas supply pipe 315 and the bypass pipe 320 to remove the component of the raw material gas remaining inside the gas supply pipe 315.
  • the treatment was performed only after the supply of the raw material gas 601, this may be performed after the supply of the oxygen-containing gas 631 as shown in 841 of the time chart of FIG.
  • a gas supply for connecting the gas supply pipe 331 and the gas supply pipe 335 to the liquid raw material tank 330 outside the valve 333 and inside the valve 334 is performed.
  • a pipe 337 is provided, and a valve 338 for turning on / off the flow of inert gas passing through the gas supply pipe 337 is installed in the middle of the gas supply pipe 337, and the liquid raw material tank 330 and the valve 334 of the gas supply pipe 335 are installed. It is necessary to connect the bypass pipe 336 between the spaces and provide a valve 339 for turning on / off the flow of the inert gas through the bypass pipe 336.
  • the flow rate of the inert gas exhausted through the bypass pipe 336 adjusted by the MFC 332 is in the range of 0.1 to 10 slm, and from the nozzle 420 into the processing chamber 201 through the gas supply pipe 516 adjusted by the MFC 512.
  • the flow rate of the fed inert gas is set to be less than 0.5 to 30 slm. That is, the flow rate of the inert gas supplied to the bypass pipe 336 is made smaller than the flow rate of the inert gas supplied to the processing chamber 201. This makes it possible to prevent the inert gas exhausted through the bypass pipe 336 from wrapping around into the processing chamber 201 and hindering the discharge of the reaction gas remaining in the processing chamber 201. Further, it is possible to prevent the reaction gas remaining in the processing chamber 201 from flowing back into the bypass pipe 336.
  • an inert gas is introduced between the gas supply pipe 315 and the bypass pipe 320 after the supply of the raw material gas 601.
  • An inert gas is supplied between the gas supply pipe 335 and the bypass pipe 336 even after the treatment 921 to supply and remove the component of the raw material gas remaining inside the gas supply pipe 315 and the oxygen-containing gas supply 631.
  • the treatment 941 for removing the component of the oxygen-containing gas remaining inside the gas supply pipe 335 may be performed every n cycles.
  • the n-cycle may be in the middle of forming the metal oxide film, or may be after the formation of the metal oxide film is completed.
  • the flow rate of the inert gas supplied to the bypass pipe 336 is made smaller than the flow rate of the inert gas supplied to the processing chamber 201.
  • the supply and removal of the raw material gas may be alternately performed a plurality of times (divided flow).
  • the amount of impurities incorporated into the metal-containing layer can be reduced.
  • the supply and removal of the oxygen-containing gas may be alternately performed a plurality of times (divided flow).
  • any film formed by using an organic raw material can be applied to other films.
  • organic raw material gas examples include chlorotri (N-ethylmethylamino) titanium (Ti [N (CH 3 ) CH 2 CH 3 ] 3 Cl, abbreviated as TIA) and tetrakisdiethylaminotitanium (Ti [N (CH 2 CH 3)).
  • TDEAT tetrakisdimethylaminotitanium
  • TDMAT tetraxethylmethylaminozincyl
  • Zr [N (CH 3 ) CH 2 CH 3 ] 4 abbreviated TEMAZ
  • TEMAH tetraxethylmethylaminohafnium
  • TMA trimethylaluminum
  • TMA bis (tershalibutylimino) bis (Tarshari Butyl Amino) Tungsten ((C 4 H 9 NH) 2 W (C 4 H 9 N) 2 ), Tungsten Hexacarbonyl (W (CO) 6 ), Pentaethoxytantal (Ta (OC 2 H 5 ) 5)
  • Abbreviated as TDEAT tetrakisdimethylaminotitanium
  • Zr [N (CH 3 ) CH 2 CH 3 ] 4 abbreviated TEMAZ
  • TEMAH tetraxethylmethylaminohafn
  • reaction gas examples include plasma-excited oxygen (O 2 ), ozone (O 3 ) water vapor (H 2 O), hydrogen hydrogen (H 2 O 2 ), and nitrous oxide (N 2 O). ), A mixed gas of O 2 + H 2 excited by plasma or the like can also be used.
  • the inert gas and N 2 gas, Ar gas, He gas, Ne gas, may be used a rare gas such as Xe gas.
  • the base film for forming the metal oxide film can be appropriately selected, and examples thereof include an aluminum (Al) film.
  • a substrate processing apparatus which is a batch type vertical apparatus for processing a plurality of substrates at a time, and a nozzle for supplying a processing gas is erected in one reaction tube, and the reaction tube is provided.
  • a processing furnace having a structure having an exhaust port at the bottom has been described, the present disclosure can also be applied to the case of forming a film using a processing furnace having another structure.
  • the outer reaction tube is called an outer tube and the inner reaction tube is called an inner tube
  • a side wall of the outer tube is used.
  • the present disclosure can also be applied to the case where the film is formed using a processing furnace having a structure in which the processing gas flows to the exhaust port that opens at a position facing the nozzle (a position symmetrical with respect to the line) across the substrate.
  • the processing gas may be supplied from a gas supply port that opens in the side wall of the inner tube, instead of being supplied from a nozzle erected in the inner tube.
  • the exhaust port that opens in the outer tube may be opened according to the height at which a plurality of substrates supported (loaded) and accommodated in multiple stages in the processing chamber exist.
  • the shape of the exhaust port may be a hole shape or a slit shape.
  • the recipe (program that describes the treatment procedure, treatment conditions, etc.) used for the film formation treatment and cleaning treatment is the treatment content (type, composition ratio, film quality, film thickness, treatment procedure, treatment of the film to be formed or removed. It is preferable to prepare them individually according to conditions) and store them in the storage device 121c via a telecommunication line or an external storage device 123. Then, when starting the process, it is preferable that the CPU 121a appropriately selects an appropriate recipe from the plurality of recipes stored in the storage device 121c according to the processing content. As a result, it becomes possible to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility with one substrate processing device, and appropriate processing can be performed in each case. Will be. In addition, the burden on the operator (input burden on processing procedures, processing conditions, etc.) can be reduced, and processing can be started quickly while avoiding operation mistakes.
  • the above recipe is not limited to the case of newly creating, for example, it may be prepared by changing an existing recipe already installed in the board processing apparatus.
  • the changed recipe may be installed on the substrate processing apparatus via a telecommunication line or a recording medium on which the recipe is recorded.
  • the input / output device 122 included in the existing board processing device may be operated to directly change the existing recipe already installed in the board processing device.
  • an example of forming a film using a batch-type substrate processing apparatus that processes a plurality of substrates at one time has been described.
  • the present disclosure is not limited to the above-described embodiment, and can be suitably applied to, for example, a case where a film is formed by using a single-wafer type substrate processing apparatus that processes one or several substrates at a time.
  • an example of forming a film by using a substrate processing apparatus having a hot wall type processing furnace has been described.
  • the present disclosure is not limited to the above-described embodiment, and can be suitably applied to the case where a film is formed by using a substrate processing apparatus having a cold wall type processing furnace. Even in these cases, the processing procedure and processing conditions can be, for example, the same processing procedure and processing conditions as those in the above-described embodiment.
  • Substrate processing device 121 Controller 200 Wafer 201 Processing chamber 202 Processing furnace 203 Reaction pipe 207 Heater 241, 243 Exhaust pipe 244 Vacuum pump 310 Liquid metal raw material tank 311,315,316,335,510,516 Gas supply pipe 312,332 512 MFC 313,314,317,318,321,322,333,334,514 Valve 320,336 Bypass piping 330 Liquid raw material tank

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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
PCT/JP2021/011557 2020-03-26 2021-03-21 基板処理装置、半導体装置の製造方法およびプログラム Ceased WO2021193480A1 (ja)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086392A (ja) * 2004-09-17 2006-03-30 Tokyo Electron Ltd 半導体製造装置及びそのメンテナンス方法
JP2009016799A (ja) * 2007-06-07 2009-01-22 Hitachi Kokusai Electric Inc 基板処理装置
WO2017033979A1 (ja) * 2015-08-26 2017-03-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086392A (ja) * 2004-09-17 2006-03-30 Tokyo Electron Ltd 半導体製造装置及びそのメンテナンス方法
JP2009016799A (ja) * 2007-06-07 2009-01-22 Hitachi Kokusai Electric Inc 基板処理装置
WO2017033979A1 (ja) * 2015-08-26 2017-03-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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