JP7316028B2 - 撮像素子及びその制御方法、及び撮像装置 - Google Patents

撮像素子及びその制御方法、及び撮像装置 Download PDF

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Publication number
JP7316028B2
JP7316028B2 JP2018145411A JP2018145411A JP7316028B2 JP 7316028 B2 JP7316028 B2 JP 7316028B2 JP 2018145411 A JP2018145411 A JP 2018145411A JP 2018145411 A JP2018145411 A JP 2018145411A JP 7316028 B2 JP7316028 B2 JP 7316028B2
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pixel
readout
pixels
pixel blocks
reading
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Japanese (ja)
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JP2020022096A5 (enExample
JP2020022096A (ja
Inventor
美絵 石井
和樹 大下内
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Canon Inc
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Canon Inc
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Priority to JP2018145411A priority Critical patent/JP7316028B2/ja
Priority to US16/527,690 priority patent/US11252354B2/en
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Publication of JP2020022096A5 publication Critical patent/JP2020022096A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2018145411A 2018-08-01 2018-08-01 撮像素子及びその制御方法、及び撮像装置 Active JP7316028B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018145411A JP7316028B2 (ja) 2018-08-01 2018-08-01 撮像素子及びその制御方法、及び撮像装置
US16/527,690 US11252354B2 (en) 2018-08-01 2019-07-31 Image sensor, control method thereof, and image capturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018145411A JP7316028B2 (ja) 2018-08-01 2018-08-01 撮像素子及びその制御方法、及び撮像装置

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JP2020022096A JP2020022096A (ja) 2020-02-06
JP2020022096A5 JP2020022096A5 (enExample) 2021-09-09
JP7316028B2 true JP7316028B2 (ja) 2023-07-27

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3090258A1 (fr) * 2018-12-12 2020-06-19 Stmicroelectronics Sa Procédé et dispositif d’estimation de niveau de bruit de rangées d’obscurité de référence d’un capteur d’images
JP7344667B2 (ja) 2019-04-18 2023-09-14 キヤノン株式会社 撮像素子及びその制御方法、及び撮像装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008219293A (ja) 2007-03-01 2008-09-18 Canon Inc 撮像装置及び撮像システム
JP2009105756A (ja) 2007-10-24 2009-05-14 Canon Inc 撮像装置、撮像システム、及び撮像装置の駆動方法
JP2015126043A (ja) 2013-12-26 2015-07-06 ソニー株式会社 電子デバイス

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
US6380880B1 (en) * 2001-03-30 2002-04-30 Pixim, Incorporated Digital pixel sensor with integrated charge transfer amplifier
JP5053869B2 (ja) * 2008-01-10 2012-10-24 キヤノン株式会社 固体撮像装置、撮像システム、及び固体撮像装置の駆動方法
JP5083272B2 (ja) 2009-05-07 2012-11-28 ソニー株式会社 半導体モジュール
JP5962533B2 (ja) 2013-02-13 2016-08-03 ソニー株式会社 固体撮像素子、駆動方法、および撮像装置
JP6491519B2 (ja) 2015-04-02 2019-03-27 キヤノン株式会社 撮像素子及び撮像装置
WO2017195613A1 (ja) * 2016-05-11 2017-11-16 ソニー株式会社 固体撮像素子、および電子機器
JP7039236B2 (ja) * 2017-09-29 2022-03-22 キヤノン株式会社 逐次比較型ａｄ変換器、撮像装置、撮像システム、移動体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008219293A (ja) 2007-03-01 2008-09-18 Canon Inc 撮像装置及び撮像システム
JP2009105756A (ja) 2007-10-24 2009-05-14 Canon Inc 撮像装置、撮像システム、及び撮像装置の駆動方法
JP2015126043A (ja) 2013-12-26 2015-07-06 ソニー株式会社 電子デバイス

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US11252354B2 (en) 2022-02-15
US20200045258A1 (en) 2020-02-06

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