JP7313829B2 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置 Download PDF

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Publication number
JP7313829B2
JP7313829B2 JP2019012781A JP2019012781A JP7313829B2 JP 7313829 B2 JP7313829 B2 JP 7313829B2 JP 2019012781 A JP2019012781 A JP 2019012781A JP 2019012781 A JP2019012781 A JP 2019012781A JP 7313829 B2 JP7313829 B2 JP 7313829B2
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Japan
Prior art keywords
light receiving
circuit
imaging device
quench
substrate
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JP2019012781A
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English (en)
Japanese (ja)
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JP2020123762A5 (enExample
JP2020123762A (ja
Inventor
祐士 田仲
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2019012781A priority Critical patent/JP7313829B2/ja
Priority to US16/716,717 priority patent/US11335723B2/en
Publication of JP2020123762A publication Critical patent/JP2020123762A/ja
Priority to US17/723,575 priority patent/US11699717B2/en
Publication of JP2020123762A5 publication Critical patent/JP2020123762A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
JP2019012781A 2019-01-29 2019-01-29 撮像素子および撮像装置 Active JP7313829B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019012781A JP7313829B2 (ja) 2019-01-29 2019-01-29 撮像素子および撮像装置
US16/716,717 US11335723B2 (en) 2019-01-29 2019-12-17 Image pickup element and image pickup apparatus
US17/723,575 US11699717B2 (en) 2019-01-29 2022-04-19 Image pickup element and image pickup apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019012781A JP7313829B2 (ja) 2019-01-29 2019-01-29 撮像素子および撮像装置

Publications (3)

Publication Number Publication Date
JP2020123762A JP2020123762A (ja) 2020-08-13
JP2020123762A5 JP2020123762A5 (enExample) 2022-04-25
JP7313829B2 true JP7313829B2 (ja) 2023-07-25

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JP2019012781A Active JP7313829B2 (ja) 2019-01-29 2019-01-29 撮像素子および撮像装置

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US (2) US11335723B2 (enExample)
JP (1) JP7313829B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置
JP7558821B2 (ja) 2021-01-22 2024-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7676158B2 (ja) 2021-02-04 2025-05-14 キヤノン株式会社 光電変換装置、光電変換システム
JP2023099398A (ja) * 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、撮像システム、光検出システム、および移動体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018078246A (ja) 2016-11-11 2018-05-17 浜松ホトニクス株式会社 光検出装置
JP2018157387A (ja) 2017-03-17 2018-10-04 キヤノン株式会社 撮像装置及び撮像システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617159B2 (ja) 2008-10-07 2014-11-05 トヨタ自動車株式会社 画像取得装置及び方法
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
WO2016003451A1 (en) * 2014-07-02 2016-01-07 The Johns Hopkins University Photodetection circuit and operating method thereof
US9847441B2 (en) * 2015-07-30 2017-12-19 Voxtel, Inc. Doped multiplier avalanche photodiode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018078246A (ja) 2016-11-11 2018-05-17 浜松ホトニクス株式会社 光検出装置
JP2018157387A (ja) 2017-03-17 2018-10-04 キヤノン株式会社 撮像装置及び撮像システム

Also Published As

Publication number Publication date
US11335723B2 (en) 2022-05-17
US11699717B2 (en) 2023-07-11
US20200243594A1 (en) 2020-07-30
JP2020123762A (ja) 2020-08-13
US20220238592A1 (en) 2022-07-28

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