JP7305987B2 - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
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- JP7305987B2 JP7305987B2 JP2019041698A JP2019041698A JP7305987B2 JP 7305987 B2 JP7305987 B2 JP 7305987B2 JP 2019041698 A JP2019041698 A JP 2019041698A JP 2019041698 A JP2019041698 A JP 2019041698A JP 7305987 B2 JP7305987 B2 JP 7305987B2
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- Prior art keywords
- voltage
- circuit
- input
- switch element
- power switch
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P3/00—Other installations
- F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
- F02P3/04—Layout of circuits
- F02P3/055—Layout of circuits with protective means to prevent damage to the circuit, e.g. semiconductor devices or the ignition coil
- F02P3/0552—Opening or closing the primary coil circuit with semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Description
2 イグニッションコイル
3 スパークプラグ
4 バッテリ
11 IGBT
12 制御回路
13 ツェナーダイオード群
14 プルダウン抵抗
15 第1の降圧回路
16 第2の降圧回路
17 ゲート抵抗
18 スピードアップダイオード
19 スイッチ素子
D11,D12 ツェナーダイオード
GND グランド端子
IN 入力端子
OUT 出力端子
R1a,R1b,R1c 抵抗
Claims (6)
- パワースイッチ素子と、前記パワースイッチ素子を制御するゲート電圧を電源電圧として使用する制御回路と、前記ゲート電圧が入力される入力端子に接続されて前記パワースイッチ素子および前記制御回路を静電気放電による破壊から保護する静電気放電保護デバイスと、天絡事故による高電圧が入力されたときに前記パワースイッチ素子および前記制御回路を前記高電圧による破壊から保護する天絡保護回路とを備えた半導体集積回路において、
前記天絡保護回路は、
前記ゲート電圧が入力される入力端子と前記制御回路との間に配置されて、前記入力端子に前記ゲート電圧が入力されたときに前記ゲート電圧を前記制御回路に給電し、前記入力端子に前記高電圧が入力されたときに前記高電圧を前記制御回路の前記電源電圧に近い第1の電圧まで降圧して前記第1の電圧を前記制御回路に給電して、前記制御回路への前記電源電圧の保護を行う第1の降圧回路と、
前記入力端子と前記パワースイッチ素子のゲートとの間に配置されて、前記入力端子に前記ゲート電圧が入力されたときに前記ゲート電圧を前記パワースイッチ素子に給電し、前記入力端子に前記高電圧が入力されたときに前記高電圧を前記ゲート電圧に近い第2の電圧まで降圧して前記第2の電圧を前記パワースイッチ素子に給電して、前記パワースイッチ素子への前記ゲート電圧の保護を行う第2の降圧回路と、
を有している、半導体集積回路。 - 前記第1の降圧回路および前記第2の降圧回路は、前記入力端子に入力された前記高電圧を順次降圧する複数段の降圧部を有している、請求項1記載の半導体集積回路。
- 前記入力端子の側に配置される前記降圧部は、直列に接続された第1の抵抗、第2の抵抗および第1のツェナーダイオードを有している、請求項2記載の半導体集積回路。
- 最終段に配置される前記降圧部は、直列に接続された第3の抵抗および第2のツェナーダイオードを有し、前段から受けた電圧を前記第2のツェナーダイオードの降伏電圧にクランプする、請求項3記載の半導体集積回路。
- 前記静電気放電保護デバイスに並列に接続されたプルダウン抵抗を有する、請求項1記載の半導体集積回路。
- 前記パワースイッチ素子がイグニッションコイルを通電または遮断するように制御するイグナイタである、請求項1記載の半導体集積回路。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019041698A JP7305987B2 (ja) | 2019-03-07 | 2019-03-07 | 半導体集積回路 |
US16/775,493 US11183494B2 (en) | 2019-03-07 | 2020-01-29 | Semiconductor integrated circuit |
CN202010078296.4A CN111664043B (zh) | 2019-03-07 | 2020-02-03 | 半导体集成电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019041698A JP7305987B2 (ja) | 2019-03-07 | 2019-03-07 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020143643A JP2020143643A (ja) | 2020-09-10 |
JP7305987B2 true JP7305987B2 (ja) | 2023-07-11 |
Family
ID=72335465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019041698A Active JP7305987B2 (ja) | 2019-03-07 | 2019-03-07 | 半導体集積回路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11183494B2 (ja) |
JP (1) | JP7305987B2 (ja) |
CN (1) | CN111664043B (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002310760A (ja) | 2001-04-11 | 2002-10-23 | Hitachi Ltd | 気体流量計 |
JP2018007539A (ja) | 2016-06-28 | 2018-01-11 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3911566B2 (ja) * | 1998-01-27 | 2007-05-09 | 富士電機デバイステクノロジー株式会社 | Mos型半導体装置 |
JP3706515B2 (ja) * | 1998-12-28 | 2005-10-12 | 矢崎総業株式会社 | 電源供給制御装置および電源供給制御方法 |
JP3423957B2 (ja) * | 1999-11-25 | 2003-07-07 | Necエレクトロニクス株式会社 | 降圧回路 |
JP3484123B2 (ja) * | 2000-01-12 | 2004-01-06 | 株式会社日立製作所 | 内燃機関用点火装置 |
JP3917865B2 (ja) * | 2000-05-26 | 2007-05-23 | 株式会社日立製作所 | 内燃機関用点火装置 |
CN200941592Y (zh) * | 2006-08-28 | 2007-08-29 | 中山大洋电机股份有限公司 | 可以与用户高压控制系统相连接的直流无刷电机的控制器 |
JP2011119236A (ja) * | 2009-10-30 | 2011-06-16 | Anden | 負荷制御回路 |
JP5423378B2 (ja) * | 2009-12-15 | 2014-02-19 | 三菱電機株式会社 | イグナイタ用電力半導体装置 |
JP5876250B2 (ja) * | 2011-08-19 | 2016-03-02 | 富士電機機器制御株式会社 | 電磁石コイルの駆動装置 |
US10305362B2 (en) | 2016-06-28 | 2019-05-28 | Fuji Electric Co., Ltd. | Semiconductor device |
-
2019
- 2019-03-07 JP JP2019041698A patent/JP7305987B2/ja active Active
-
2020
- 2020-01-29 US US16/775,493 patent/US11183494B2/en active Active
- 2020-02-03 CN CN202010078296.4A patent/CN111664043B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002310760A (ja) | 2001-04-11 | 2002-10-23 | Hitachi Ltd | 気体流量計 |
JP2018007539A (ja) | 2016-06-28 | 2018-01-11 | 富士電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN111664043B (zh) | 2022-09-16 |
US11183494B2 (en) | 2021-11-23 |
CN111664043A (zh) | 2020-09-15 |
JP2020143643A (ja) | 2020-09-10 |
US20200286882A1 (en) | 2020-09-10 |
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