JP7303887B2 - プロセス変動に対する計量感度を定量するためのスケーリング指標 - Google Patents

プロセス変動に対する計量感度を定量するためのスケーリング指標 Download PDF

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JP7303887B2
JP7303887B2 JP2021543396A JP2021543396A JP7303887B2 JP 7303887 B2 JP7303887 B2 JP 7303887B2 JP 2021543396 A JP2021543396 A JP 2021543396A JP 2021543396 A JP2021543396 A JP 2021543396A JP 7303887 B2 JP7303887 B2 JP 7303887B2
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overlay
metrology
targets
target
tool
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JP2022523692A (ja
JP2022523692A5 (OSRAM
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タル マーシアノ
ノア アーモン
ダナ クレイン
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Algebra (AREA)
  • Health & Medical Sciences (AREA)
  • Operations Research (AREA)
  • Evolutionary Biology (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Databases & Information Systems (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Probability & Statistics with Applications (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2021543396A 2019-01-28 2020-01-21 プロセス変動に対する計量感度を定量するためのスケーリング指標 Active JP7303887B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962797557P 2019-01-28 2019-01-28
US62/797,557 2019-01-28
US16/741,574 2020-01-13
US16/741,574 US11333982B2 (en) 2019-01-28 2020-01-13 Scaling metric for quantifying metrology sensitivity to process variation
PCT/US2020/014308 WO2020159737A1 (en) 2019-01-28 2020-01-21 Scaling metric for quantifying metrology sensitivity to process variation

Publications (3)

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JP2022523692A JP2022523692A (ja) 2022-04-26
JP2022523692A5 JP2022523692A5 (OSRAM) 2023-01-30
JP7303887B2 true JP7303887B2 (ja) 2023-07-05

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JP2021543396A Active JP7303887B2 (ja) 2019-01-28 2020-01-21 プロセス変動に対する計量感度を定量するためのスケーリング指標

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US (1) US11333982B2 (OSRAM)
JP (1) JP7303887B2 (OSRAM)
KR (1) KR102513718B1 (OSRAM)
CN (1) CN113330550B (OSRAM)
TW (1) TWI800708B (OSRAM)
WO (1) WO2020159737A1 (OSRAM)

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WO2021107986A1 (en) * 2019-11-28 2021-06-03 Kla Corporation Systems and methods for metrology optimization based on metrology landscapes
US12406891B2 (en) * 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
EP4338009A4 (en) * 2021-10-21 2025-06-04 KLA Corporation INDUCED SHIFTS FOR IMPROVED OVERHEATING ERROR METROLOGY
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12455509B2 (en) * 2022-02-24 2025-10-28 Nanya Technology Corporation Semiconductor structure and system for manufacturing the same
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
KR102662778B1 (ko) * 2023-08-16 2024-04-30 (주)오로스 테크놀로지 오버레이 계측 장치의 타겟 선정 방법 및 오버레이 계측 장치의 타겟 선정 시스템
US12423803B2 (en) * 2024-01-23 2025-09-23 KLA Con Predicting tool induced shift using Moiré overlay targets

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JP2014512101A (ja) 2011-04-06 2014-05-19 ケーエルエー−テンカー コーポレイション 向上したプロセス制御のための品質測定値を提供するための方法およびシステム
JP2017502332A (ja) 2013-12-30 2017-01-19 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジーターゲットの設計のための方法及び装置
US20180088470A1 (en) 2016-09-27 2018-03-29 Asml Netherlands B.V. Metrology recipe selection
JP2018515911A (ja) 2015-04-06 2018-06-14 ケーエルエー−テンカー コーポレイション 計量システムにおける計量データのフィードフォワード

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US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP2006216796A (ja) * 2005-02-03 2006-08-17 Nikon Corp 基準パターン情報の作成方法、位置計測方法、位置計測装置、露光方法、及び露光装置
US8045786B2 (en) 2006-10-24 2011-10-25 Kla-Tencor Technologies Corp. Waferless recipe optimization
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JP5377595B2 (ja) 2011-03-25 2013-12-25 富士フイルム株式会社 着色感放射線性組成物、カラーフィルタ、着色パターンの製造方法、カラーフィルタの製造方法、固体撮像素子、及び液晶表示装置
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JP2014512101A (ja) 2011-04-06 2014-05-19 ケーエルエー−テンカー コーポレイション 向上したプロセス制御のための品質測定値を提供するための方法およびシステム
JP2017502332A (ja) 2013-12-30 2017-01-19 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジーターゲットの設計のための方法及び装置
JP2018515911A (ja) 2015-04-06 2018-06-14 ケーエルエー−テンカー コーポレイション 計量システムにおける計量データのフィードフォワード
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Publication number Publication date
JP2022523692A (ja) 2022-04-26
TWI800708B (zh) 2023-05-01
TW202043930A (zh) 2020-12-01
CN113330550A (zh) 2021-08-31
KR20210110897A (ko) 2021-09-09
US20200241428A1 (en) 2020-07-30
US11333982B2 (en) 2022-05-17
KR102513718B1 (ko) 2023-03-23
CN113330550B (zh) 2024-08-06
WO2020159737A1 (en) 2020-08-06

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