TWI800708B - 疊對計量系統及方法 - Google Patents

疊對計量系統及方法 Download PDF

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Publication number
TWI800708B
TWI800708B TW109102368A TW109102368A TWI800708B TW I800708 B TWI800708 B TW I800708B TW 109102368 A TW109102368 A TW 109102368A TW 109102368 A TW109102368 A TW 109102368A TW I800708 B TWI800708 B TW I800708B
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TW
Taiwan
Prior art keywords
overlay
measurement
superimposed
target
measurements
Prior art date
Application number
TW109102368A
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English (en)
Chinese (zh)
Other versions
TW202043930A (zh
Inventor
托爾 馬西安諾
諾亞 阿蒙
丹那 克林
Original Assignee
美商科磊股份有限公司
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Application filed by 美商科磊股份有限公司 filed Critical 美商科磊股份有限公司
Publication of TW202043930A publication Critical patent/TW202043930A/zh
Application granted granted Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Algebra (AREA)
  • Health & Medical Sciences (AREA)
  • Operations Research (AREA)
  • Evolutionary Biology (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Databases & Information Systems (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Probability & Statistics with Applications (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW109102368A 2019-01-28 2020-01-22 疊對計量系統及方法 TWI800708B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962797557P 2019-01-28 2019-01-28
US62/797,557 2019-01-28
US16/741,574 2020-01-13
US16/741,574 US11333982B2 (en) 2019-01-28 2020-01-13 Scaling metric for quantifying metrology sensitivity to process variation

Publications (2)

Publication Number Publication Date
TW202043930A TW202043930A (zh) 2020-12-01
TWI800708B true TWI800708B (zh) 2023-05-01

Family

ID=71731223

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109102368A TWI800708B (zh) 2019-01-28 2020-01-22 疊對計量系統及方法

Country Status (6)

Country Link
US (1) US11333982B2 (OSRAM)
JP (1) JP7303887B2 (OSRAM)
KR (1) KR102513718B1 (OSRAM)
CN (1) CN113330550B (OSRAM)
TW (1) TWI800708B (OSRAM)
WO (1) WO2020159737A1 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021107986A1 (en) * 2019-11-28 2021-06-03 Kla Corporation Systems and methods for metrology optimization based on metrology landscapes
US12406891B2 (en) * 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
EP4338009A4 (en) * 2021-10-21 2025-06-04 KLA Corporation INDUCED SHIFTS FOR IMPROVED OVERHEATING ERROR METROLOGY
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12455509B2 (en) * 2022-02-24 2025-10-28 Nanya Technology Corporation Semiconductor structure and system for manufacturing the same
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
KR102662778B1 (ko) * 2023-08-16 2024-04-30 (주)오로스 테크놀로지 오버레이 계측 장치의 타겟 선정 방법 및 오버레이 계측 장치의 타겟 선정 시스템
US12423803B2 (en) * 2024-01-23 2025-09-23 KLA Con Predicting tool induced shift using Moiré overlay targets

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150185625A1 (en) * 2013-12-30 2015-07-02 Asml Netherlands B.V. Method and apparatus for design of a metrology target
US20180088470A1 (en) * 2016-09-27 2018-03-29 Asml Netherlands B.V. Metrology recipe selection
TW201832020A (zh) * 2016-02-22 2018-09-01 荷蘭商Ａｓｍｌ荷蘭公司 對度量衡資料之貢獻之分離
TW201843534A (zh) * 2017-05-03 2018-12-16 荷蘭商Ａｓｍｌ荷蘭公司 度量衡參數判定及度量衡配方選擇

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3391328B2 (ja) * 1993-02-08 2003-03-31 株式会社ニコン 位置合わせ方法、その位置合わせ方法を用いた露光方法、その露光方法を用いたデバイス製造方法、そのデバイス製造方法で製造されたデバイス、並びに位置合わせ装置、その位置合わせ装置を備えた露光装置
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP2006216796A (ja) * 2005-02-03 2006-08-17 Nikon Corp 基準パターン情報の作成方法、位置計測方法、位置計測装置、露光方法、及び露光装置
US8045786B2 (en) 2006-10-24 2011-10-25 Kla-Tencor Technologies Corp. Waferless recipe optimization
US7873504B1 (en) 2007-05-07 2011-01-18 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
KR20120058572A (ko) 2009-08-24 2012-06-07 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 장치, 리소그래피 처리 셀 및 메트롤로지 타겟들을 포함하는 기판
JP5377595B2 (ja) 2011-03-25 2013-12-25 富士フイルム株式会社 着色感放射線性組成物、カラーフィルタ、着色パターンの製造方法、カラーフィルタの製造方法、固体撮像素子、及び液晶表示装置
JP6099626B2 (ja) 2011-04-06 2017-03-22 ケーエルエー−テンカー コーポレイション 向上したプロセス制御のための品質測定値を提供するための方法およびシステム
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
SG11201703585RA (en) * 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
US9903711B2 (en) 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
KR20170124578A (ko) * 2015-04-10 2017-11-10 에이에스엠엘 네델란즈 비.브이. 검사와 계측을 위한 방법 및 장치
WO2017093011A1 (en) 2015-12-04 2017-06-08 Asml Netherlands B.V. Statistical hierarchical reconstruction from metrology data
WO2018106685A1 (en) 2016-12-05 2018-06-14 Lutron Electronics Co., Inc. User interface for controlling intensity and color of a lighting load
US10901325B2 (en) 2017-02-28 2021-01-26 Kla-Tencor Corporation Determining the impacts of stochastic behavior on overlay metrology data

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150185625A1 (en) * 2013-12-30 2015-07-02 Asml Netherlands B.V. Method and apparatus for design of a metrology target
TW201832020A (zh) * 2016-02-22 2018-09-01 荷蘭商Ａｓｍｌ荷蘭公司 對度量衡資料之貢獻之分離
US20180088470A1 (en) * 2016-09-27 2018-03-29 Asml Netherlands B.V. Metrology recipe selection
TW201843534A (zh) * 2017-05-03 2018-12-16 荷蘭商Ａｓｍｌ荷蘭公司 度量衡參數判定及度量衡配方選擇

Also Published As

Publication number Publication date
JP7303887B2 (ja) 2023-07-05
JP2022523692A (ja) 2022-04-26
TW202043930A (zh) 2020-12-01
CN113330550A (zh) 2021-08-31
KR20210110897A (ko) 2021-09-09
US20200241428A1 (en) 2020-07-30
US11333982B2 (en) 2022-05-17
KR102513718B1 (ko) 2023-03-23
CN113330550B (zh) 2024-08-06
WO2020159737A1 (en) 2020-08-06

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