JP7296277B2 - エッチングする方法、デバイス製造方法、及びプラズマ処理装置 - Google Patents

エッチングする方法、デバイス製造方法、及びプラズマ処理装置 Download PDF

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Publication number
JP7296277B2
JP7296277B2 JP2019151867A JP2019151867A JP7296277B2 JP 7296277 B2 JP7296277 B2 JP 7296277B2 JP 2019151867 A JP2019151867 A JP 2019151867A JP 2019151867 A JP2019151867 A JP 2019151867A JP 7296277 B2 JP7296277 B2 JP 7296277B2
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Japan
Prior art keywords
gas
film
substrate
plasma
process gas
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JP2019151867A
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English (en)
Japanese (ja)
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JP2021034503A5 (https=
JP2021034503A (ja
Inventor
哲史 山田
光貴 千野
泰光 昆
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2019151867A priority Critical patent/JP7296277B2/ja
Priority to US16/991,938 priority patent/US11121001B2/en
Publication of JP2021034503A publication Critical patent/JP2021034503A/ja
Publication of JP2021034503A5 publication Critical patent/JP2021034503A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2019151867A 2019-08-22 2019-08-22 エッチングする方法、デバイス製造方法、及びプラズマ処理装置 Active JP7296277B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019151867A JP7296277B2 (ja) 2019-08-22 2019-08-22 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
US16/991,938 US11121001B2 (en) 2019-08-22 2020-08-12 Method of etching, device manufacturing method, and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019151867A JP7296277B2 (ja) 2019-08-22 2019-08-22 エッチングする方法、デバイス製造方法、及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2021034503A JP2021034503A (ja) 2021-03-01
JP2021034503A5 JP2021034503A5 (https=) 2022-06-02
JP7296277B2 true JP7296277B2 (ja) 2023-06-22

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JP2019151867A Active JP7296277B2 (ja) 2019-08-22 2019-08-22 エッチングする方法、デバイス製造方法、及びプラズマ処理装置

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US (1) US11121001B2 (https=)
JP (1) JP7296277B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7257088B1 (ja) * 2022-03-24 2023-04-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
WO2024180921A1 (ja) * 2023-02-27 2024-09-06 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006140447A (ja) 2004-10-14 2006-06-01 Renesas Technology Corp 半導体装置およびその製造方法
US20090170333A1 (en) 2007-11-29 2009-07-02 Applied Materials, Inc. Shallow trench isolation etch process
JP2010245101A (ja) 2009-04-01 2010-10-28 Hitachi High-Technologies Corp ドライエッチング方法
JP2015211139A (ja) 2014-04-25 2015-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびドライエッチング方法
JP2016051750A (ja) 2014-08-29 2016-04-11 東京エレクトロン株式会社 エッチング方法
JP2019117876A (ja) 2017-12-27 2019-07-18 東京エレクトロン株式会社 エッチング方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4209774B2 (ja) 2001-09-28 2009-01-14 住友精密工業株式会社 シリコン基板のエッチング方法およびエッチング装置
US9257300B2 (en) * 2013-07-09 2016-02-09 Lam Research Corporation Fluorocarbon based aspect-ratio independent etching

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006140447A (ja) 2004-10-14 2006-06-01 Renesas Technology Corp 半導体装置およびその製造方法
US20090170333A1 (en) 2007-11-29 2009-07-02 Applied Materials, Inc. Shallow trench isolation etch process
JP2010245101A (ja) 2009-04-01 2010-10-28 Hitachi High-Technologies Corp ドライエッチング方法
JP2015211139A (ja) 2014-04-25 2015-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびドライエッチング方法
JP2016051750A (ja) 2014-08-29 2016-04-11 東京エレクトロン株式会社 エッチング方法
JP2019117876A (ja) 2017-12-27 2019-07-18 東京エレクトロン株式会社 エッチング方法

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US11121001B2 (en) 2021-09-14
JP2021034503A (ja) 2021-03-01
US20210057228A1 (en) 2021-02-25

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