JP7283515B2 - Compound, resin, composition, resist pattern forming method and circuit pattern forming method - Google Patents

Description

TECHNICAL FIELD The present invention relates to compounds having specific structures, resins, and compositions containing these. The present invention also relates to a pattern forming method (resist pattern forming method and circuit pattern forming method) using the composition.

In the manufacture of semiconductor devices, microfabrication is performed by lithography using a photoresist material. However, in recent years, with the increase in the integration density and speed of LSIs, there is a demand for further miniaturization based on pattern rules. In addition, the light source for lithography used in resist pattern formation has been shortened from the krf excimer laser (248 nm) to the arf excimer laser (193 nm), and the introduction of extreme ultraviolet light (EUV, 13.5 nm). is also expected.

However, in lithography using conventional polymer-based resist materials, the molecular weight is as large as about 10,000 to 100,000, and the molecular weight distribution is wide, which causes roughness on the pattern surface and makes it difficult to control pattern dimensions, limiting miniaturization. There is
Therefore, various low-molecular-weight resist materials have been proposed so far in order to provide resist patterns with higher resolution. Since the low-molecular-weight resist material has a small molecular size, it is expected to provide a resist pattern with high resolution and low roughness.

Currently, various materials are known as such low-molecular-weight resist materials. For example, an alkali-developable negative radiation-sensitive composition using a low-molecular-weight polynuclear polyphenol compound as a main component (see, for example, Patent Documents 1 and 2 below) has been proposed, and a low-molecular-weight resist having high heat resistance has been proposed. As a material candidate, an alkali developable negative radiation-sensitive composition using a low-molecular-weight cyclic polyphenol compound as a main component (see, for example, Patent Document 3 and Non-Patent Document 1 below) has also been proposed. In addition, as a base compound of a resist material, a polyphenol compound is known to be capable of imparting high heat resistance while having a low molecular weight, and is useful for improving the resolution and roughness of resist patterns (for example, the following non-patent document 2).

The present inventors have developed a resist composition containing a compound with a specific structure and an organic solvent as a material that is excellent in etching resistance, soluble in a solvent, and can be subjected to a wet process (see, for example, Patent Document 4 below. ) is proposed.

In addition, as the resist pattern becomes finer and finer, a resolution problem or a problem that the resist pattern collapses after development occurs. However, simply thinning the resist makes it difficult to obtain a resist pattern with a film thickness sufficient for substrate processing. Therefore, in addition to the resist pattern, there is a need for a process in which a resist underlayer film is formed between the resist and the semiconductor substrate to be processed, and this resist underlayer film also functions as a mask during substrate processing.

At present, various types of resist underlayer films are known for such processes. For example, unlike conventional resist underlayer films with a high etching rate, terminal groups are removed by applying a predetermined energy to realize a resist underlayer film for lithography that has a dry etching rate selectivity close to that of resist. An underlayer film-forming material for multi-layer resist processes has been proposed which contains a solvent and a resin component having at least a substituent group that is separated to form a sulfonic acid residue (see, for example, Patent Document 5 below). In addition, a resist underlayer film material containing a polymer having a specific repeating unit has been proposed as a material for realizing a resist underlayer film for lithography that has a dry etching rate selectivity ratio lower than that of a resist (for example, the following patents Reference 6). Furthermore, in order to realize a resist underlayer film for lithography having a dry etching rate selectivity ratio smaller than that of a semiconductor substrate, acenaphthylene repeating units and repeating units having a substituted or unsubstituted hydroxy group are copolymerized. A resist underlayer film material containing a polymer has been proposed (see, for example, Patent Document 7 below).

On the other hand, an amorphous carbon underlayer film formed by CVD using methane gas, ethane gas, acetylene gas, etc. as raw materials is well known as a material having high etching resistance in this type of resist underlayer film. However, from the viewpoint of process, there is a demand for a resist underlayer film material that can form a resist underlayer film by a wet process such as spin coating or screen printing.

In addition, the present inventors have found a composition for forming an underlayer film for lithography containing a compound having a specific structure and an organic solvent as a material that has excellent etching resistance, high heat resistance, is soluble in a solvent, and can be subjected to a wet process. proposed a product (see, for example, Patent Document 8 below).

Regarding the method of forming the intermediate layer used in the formation of the resist underlayer film in the three-layer process, for example, a method of forming a silicon nitride film (see, for example, Patent Document 9 below) and a method of forming a silicon nitride film by CVD (for example, , see Patent Document 10 below). Also, as an intermediate layer material for a three-layer process, a material containing a silsesquioxane-based silicon compound is known (see, for example, Patent Documents 11 and 12 below).
Furthermore, various compositions have been proposed as optical component-forming compositions. Examples thereof include acrylic resins (see, for example, Patent Documents 13 and 14 below).

JP-A-2005-326838 JP 2008-145539 A JP 2009-173623 A WO2013/024778 JP-A-2004-177668 JP 2004-271838 A JP 2005-250434 A WO2013/024779 JP-A-2002-334869 WO2004/066377 Japanese Patent Application Laid-Open No. 2007-226170 JP 2007-226204 A JP 2010-138393 A JP 2015-174877 A

T. Nakayama, M.; Nomura, K.; Haga, M.; Ueda: Bull. Chem. Soc. Jpn. , 71, 2979 (1998) Shinji Okazaki, 22 others, "New Development of Photoresist Material Development," CMC Publishing Co., Ltd., September 2009, p. 211-259

As described above, a large number of lithographic film-forming compositions for resist applications and lithographic film-forming compositions for underlayer film applications have been proposed. There is no material that not only has solvent solubility but also has heat resistance and etching resistance at a high level, and the development of a new material is required. There is also a demand for the development of new materials suitable for obtaining permanent resist films with excellent alkali developability, photosensitivity and resolution.
In addition, many compositions for optical members have been proposed so far, but there is no composition that satisfies both heat resistance, transparency and refractive index at a high level, and the development of new materials is required.

The present invention has been made in view of the above problems, and its object is to provide compounds and resins having high solubility in safe solvents and good heat resistance and etching resistance, compositions using the same, and The present invention relates to a method of forming a resist pattern and a method of forming a circuit pattern using the composition.

（０）
（式（０）中、Ｒ^Ｙは、水素原子、炭素数１～３０のアルキル基又は炭素数６～３０のアリール基であり、
Ｒ^Ｚは、炭素数１～６０のＮ価の基又は単結合であり、
Ｒ^Ｔは、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、Ｒ^Ｔの少なくとも１つは、水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、
Ｘは、酸素原子、硫黄原子又は無架橋であることを表し、
Ｍは、各々独立して０～９の整数であり、ここで、ｍの少なくとも１つは１～９の整数であり、
Ｎは、１～４の整数であり、Ｎが２以上の整数の場合、Ｎ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｒは、各々独立して０～２の整数である。）
＜２＞ 前記式（０）で表される化合物が下記式（１）で表される化合物である、前記＜１＞に記載の化合物。

（１）
（式（１）中、Ｒ^０は、前記Ｒ^Ｙと同義であり、
Ｒ^１は、炭素数１～６０のｎ価の基又は単結合であり、
Ｒ^２～Ｒ^５は、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、Ｒ^２～Ｒ^５の少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、
Ｍ^２及びｍ^３は、各々独立して、０～８の整数であり、
Ｍ^４及びｍ^５は、各々独立して、０～９の整数であり、
但し、ｍ^２、ｍ^３、ｍ^４及びｍ^５は同時に０となることはなく、
Ｎは前記Ｎと同義であり、ここで、ｎが２以上の整数の場合、ｎ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｐ^２～ｐ^５は、前記ｒと同義である。）
＜３＞ 前記式（０）で表される化合物が下記式（２）で表される化合物である、前記＜１＞に記載の化合物。

（２）
（式（２）中、Ｒ^０Ａは、前記Ｒ^Ｙと同義であり、
Ｒ^１Ａは、炭素数１～６０のｎ^ａ価の基又は単結合であり、
Ｒ^２Ａは、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、Ｒ^２Ａの少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、
Ｎ^ａは、前記Ｎと同義であり、ここで、ｎ^ａが２以上の整数の場合、ｎ^ａ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｘ^Ａは、前記Ｘと同義あり、
Ｍ^２ａは、各々独立して、０～７の整数であり、但し、少なくとも１つのｍ^２ａは１～７の整数であり、
Ｑ^ａは、各々独立して、０又は１である。）
＜４＞ 前記式（１）で表される化合物が下記式（１－１）で表される化合物である、前記＜２＞に記載の化合物。

（１－１）
（式（１－１）中、Ｒ^０、Ｒ^１、Ｒ^４、Ｒ^５、ｎ、ｐ^２～ｐ^５、ｍ^４及びｍ^５は、前記と同義であり、
Ｒ^６～Ｒ^７は、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、
Ｒ^１０～Ｒ^１１は、各々独立して、水素原子又は含ビニルフェニルメチル基であり、
ここで、Ｒ^１０～Ｒ^１１の少なくとも１つは含ビニルフェニルメチル基であり、
Ｍ^６及びｍ^７は、各々独立して、０～７の整数であり、
但し、ｍ^４、ｍ^５、ｍ^６及びｍ^７は同時に０となることはない。）
＜５＞ 前記式（１－１）で表される化合物が下記式（１－２）で表される化合物である、前記＜４＞に記載の化合物。

（１－２）
（式（１－２）中、Ｒ^０、Ｒ^１、Ｒ^６、Ｒ^７、Ｒ^１０、Ｒ^１１、ｎ、ｐ^２～ｐ^５、ｍ^６及びｍ^７は、前記と同義であり、
Ｒ^８～Ｒ^９は、前記Ｒ^６～Ｒ^７と同義であり、
Ｒ^１２～Ｒ^１３は、前記Ｒ^１０～Ｒ^１１と同義であり、
Ｍ^８及びｍ^９は、各々独立して、０～８の整数であり、
但し、ｍ^６、ｍ^７、ｍ^８及びｍ^９は同時に０となることはない。）
＜６＞ 前記式（２）で表される化合物が下記式（２－１）で表される化合物である、前記＜３＞に記載の化合物。

（２－１）
（式（２－１）中、Ｒ^０Ａ、Ｒ^１Ａ、ｎ^ａ、ｑ^ａ及びＸ^Ａ、は、前記式（２）で説明したものと同義である。
Ｒ^３Ａは、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基であり、
Ｒ^４Ａは、各々独立して、水素原子又は含ビニルフェニルメチル基であり、
ここで、Ｒ^４Ａの少なくとも１つは含ビニルフェニルメチル基であり、
Ｍ^６ａは、各々独立して、０～５の整数である。）
＜７＞ 前記＜１＞に記載の化合物をモノマーとして得られる、樹脂。
＜８＞ 下記式（３）で表される構造を有する、前記＜７＞に記載の樹脂。

（３）
（式（３）中、Ｌは、置換基を有していてもよい炭素数１～３０のアルキレン基、置換基を有していてもよい炭素数６～３０のアリーレン基、置換基を有していてもよい炭素数１～３０のアルコキシレン基又は単結合であり、前記アルキレン基、前記アリーレン基、前記アルコキシレン基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、
Ｒ^０は、前記Ｒ^Ｙと同義であり、
Ｒ^１は、炭素数１～６０のｎ価の基又は単結合であり、
Ｒ^２～Ｒ^５は、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、
Ｍ^２及びｍ^３は、各々独立して、０～８の整数であり、
Ｍ^４及びｍ^５は、各々独立して、０～９の整数であり、
但し、ｍ^２、ｍ^３、ｍ^４及びｍ^５は同時に０となることはなく、Ｒ^２～Ｒ^５の少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基である。
Ｎは前記Ｎと同義であり、ここで、ｎが２以上の整数の場合、ｎ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｐ^２～ｐ^５は、前記ｒと同義である。）
＜９＞ 下記式（４）で表される構造を有する、前記＜７＞に記載の樹脂。

（４）
（式（４）中、Ｌは、置換基を有していてもよい炭素数１～３０のアルキレン基、置換基を有していてもよい炭素数６～３０のアリーレン基、置換基を有していてもよい炭素数１～３０のアルコキシレン基又は単結合であり、前記アルキレン基、前記アリーレン基、前記アルコキシレン基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、
Ｒ^０Ａは、前記Ｒ^Ｙと同義であり、
Ｒ^１Ａは、炭素数１～３０のｎ^ａ価の基又は単結合であり、
Ｒ^２Ａは、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、Ｒ^２Ａの少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、
Ｎ^ａは、前記Ｎと同義であり、ここで、ｎ^ａが２以上の整数の場合、ｎ^ａ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｘ^Ａは、前記Ｘと同義あり、
Ｍ^２ａは、各々独立して、０～７の整数であり、但し、少なくとも１つのｍ^２ａは１～６の整数であり、
Ｑ^ａは、各々独立して、０又は１である。）
＜１０＞ 前記＜１＞～＜６＞のいずれか一つに記載の化合物及び前記＜７＞～＜９＞のいずれか一つに記載の樹脂からなる群より選ばれる１種以上を含有する、組成物。
＜１１＞ 溶媒をさらに含有する、前記＜１０＞に記載の組成物。
＜１２＞ 酸発生剤をさらに含有する、前記＜１０＞又は前記＜１１＞に記載の組成物。
＜１３＞ 架橋剤をさらに含有する、前記＜１０＞～＜１２＞のいずれか一つに記載の組成物。
＜１４＞ 前記架橋剤が、フェノール化合物、エポキシ化合物、シアネート化合物、アミノ化合物、ベンゾオキサジン化合物、メラミン化合物、グアナミン化合物、グリコールウリル化合物、ウレア化合物、イソシアネート化合物及びアジド化合物からなる群より選ばれる少なくとも１種である、前記＜１３＞に記載の組成物。
＜１５＞ 前記架橋剤が、少なくとも１つのアリル基を有する、前記＜１３＞又は＜１４＞に記載の組成物。
＜１６＞ 前記架橋剤の含有量が、前記＜１＞～＜６＞のいずれか一つに記載の化合物及び前記＜７＞～＜９＞のいずれか一つに記載の樹脂からなる群より選ばれる１種以上を含有する組成物の合計質量１００質量部に対し、０．１～１００質量部である、前記＜１３＞～＜１５＞のいずれか一つに記載の組成物。
＜１７＞ 架橋促進剤をさらに含有する、前記＜１３＞～＜１６＞のいずれか一つに記載の組成物。
＜１８＞ 前記架橋促進剤が、アミン類、イミダゾール類、有機ホスフィン類、及びルイス酸からなる群より選ばれる少なくとも１種である、前記＜１７＞に記載の組成物。
＜１９＞ 前記架橋促進剤の含有量が、前記＜１＞～＜６＞のいずれか一つに記載の化合物及び前記＜７＞～＜９＞のいずれか一つに記載の樹脂からなる群より選ばれる１種以上を含有する組成物の合計質量１００質量部に対し、０．１～５質量部である、前記＜１７＞又は＜１８＞に記載の組成物。
＜２０＞ ラジカル重合開始剤をさらに含有する、前記＜１０＞～＜１９＞のいずれか一つに記載の組成物。
＜２１＞ 前記ラジカル重合開始剤が、ケトン系光重合開始剤、有機過酸化物系重合開始剤及びアゾ系重合開始剤からなる群より選ばれる少なくとも１種である、前記＜１０＞～＜２０＞のいずれか一つに記載の組成物。
＜２２＞ 前記ラジカル重合開始剤の含有量が、前記＜１＞～＜６＞のいずれか一つに記載の化合物及び前記＜７＞～＜９＞のいずれか一つに記載の樹脂からなる群より選ばれる１種以上を含有する組成物の合計質量１００質量部に対し、０．０５～２５質量部である、前記＜１０＞～＜２１＞のいずれか一つに記載の組成物。
＜２３＞ リソグラフィー用膜形成に用いられる、前記＜１０＞～＜２２＞のいずれか一つに記載の組成物。
＜２４＞ レジスト永久膜形成に用いられる、前記＜１０＞～＜２２＞のいずれか一つに記載の組成物。
＜２５＞ 光学部品形成に用いられる、前記＜１０＞～＜２２＞のいずれか一つに記載の組成物。
＜２６＞ 基板上に、前記＜２３＞に記載の組成物を用いてフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像を行う工程を含む、レジストパターン形成方法。
＜２７＞ 基板上に、前記＜２３＞に記載の組成物を用いて下層膜を形成し、前記下層膜上に、少なくとも１層のフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像を行う工程を含む、レジストパターン形成方法。
＜２８＞ 基板上に、前記＜２３＞に記載の組成物を用いて下層膜を形成し、前記下層膜上に、レジスト中間層膜材料を用いて中間層膜を形成し、前記中間層膜上に、少なくとも１層のフォトレジスト層を形成した後、前記フォトレジスト層の所定の領域に放射線を照射し、現像してレジストパターンを形成し、その後、前記レジストパターンをマスクとして前記中間層膜をエッチングし、得られた中間層膜パターンをエッチングマスクとして前記下層膜をエッチングし、得られた下層膜パターンをエッチングマスクとして基板をエッチングすることにより基板にパターンを形成する工程を含む、回路パターン形成方法。
＜２９＞
下記式（５）で表される化合物。

（５）
（式（５）中、Ｒ^５Ａは、炭素数１～６０のＮ価の基又は単結合であり、
Ｍ^１０は、各々独立して１～３の整数であり
Ｎ^Ｂは、１～４の整数であり、Ｎ^Ｂが２以上の整数の場合、Ｎ個の［ ］内の構造式は同一であっても異なっていてもよい。） The present inventors have made intensive studies to solve the above problems, and as a result, have found that the above problems can be solved by using a compound or resin having a specific structure, and have completed the present invention.
That is, the present invention is as follows.
<1> A compound represented by the following formula (0).

(0)
(In formula (0), R ^Y is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms,
R ^Z is an N-valent group or a single bond having 1 to 60 carbon atoms,
Each R ^T is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms which may be substituted, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group, or a hydroxyl group is a group in which the hydrogen atom of is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond, and at least one of R ^T is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group,
X represents an oxygen atom, a sulfur atom or non-crosslinked,
each M is independently an integer from 0 to 9, wherein at least one of m is an integer from 1 to 9;
N is an integer of 1 to 4, and when N is an integer of 2 or more, the structural formulas in N [ ] may be the same or different,
Each R is independently an integer of 0-2. )
<2> The compound according to <1>, wherein the compound represented by the formula (0) is a compound represented by the following formula (1).

(1)
(In formula (1), R ⁰ has the same meaning as R ^Y ,
R ¹ is an n-valent group having 1 to 60 carbon atoms or a single bond,
R ² to R ⁵ are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, or a substituent an alkenyl group having 2 to 30 carbon atoms which may have, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, A hydroxyl group or a group in which the hydrogen atom of the hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond. well, at least one of R ² to R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group;
M ² and m ³ are each independently an integer from 0 to 8;
M ⁴ and m ⁵ are each independently an integer from 0 to 9;
However, m ² , m ³ , m ⁴ and m ⁵ are not 0 at the same time,
N is the same as the above N, where n is an integer of 2 or more, the n structural formulas in [ ] may be the same or different,
P ² to p ⁵ are synonymous with r above. )
<3> The compound according to <1>, wherein the compound represented by the formula (0) is a compound represented by the following formula (2).

(2)
(In formula (2), R ^0A is synonymous with R ^Y ,
R ^1A is a na ^- valent group having 1 to 60 carbon atoms or a single bond,
Each R ^2A is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms which may be substituted, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group, or a hydroxyl group is a group in which the hydrogen atom of is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond, and at least one of R ^2A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group,
N ^a has the same definition as the above N, where, when n ^a is an integer of 2 or more, the structural formulas in [ ] of n ^a number may be the same or different,
X ^A has the same definition as X above,
each M ^2a is independently an integer from 0 to 7, with the proviso that at least one m ^2a is an integer from 1 to 7;
Q ^a is each independently 0 or 1; )
<4> The compound according to <2> above, wherein the compound represented by formula (1) is a compound represented by formula (1-1) below.

(1-1)
(in formula (1-1), R ⁰ , R ¹ , R ⁴ , R ⁵ , n, p ² to p ⁵ , m ⁴ and m ⁵ are as defined above;
R ⁶ to R ⁷ are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, or a substituent an alkenyl group having 2 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, which may have
R ¹⁰ to R ¹¹ are each independently a hydrogen atom or a vinyl-containing phenylmethyl group,
Here, at least one of R ¹⁰ to R ¹¹ is a vinyl-containing phenylmethyl group,
M ⁶ and m ⁷ are each independently an integer from 0 to 7;
However, m ⁴ , m ⁵ , m ⁶ and m ⁷ are never 0 at the same time. )
<5> The compound according to <4>, wherein the compound represented by formula (1-1) is a compound represented by formula (1-2) below.

(1-2)
(in formula (1-2), R ⁰ , R ¹ , R ⁶ , R ⁷ , R ¹⁰ , R ¹¹ , n, p ² to p ⁵ , m ⁶ and m ⁷ are as defined above;
R ⁸ to R ⁹ have the same definitions as R ⁶ to R ⁷ ,
R ¹² to R ¹³ have the same definitions as R ¹⁰ to R ¹¹ ;
M ⁸ and m ⁹ are each independently an integer from 0 to 8;
However, m ⁶ , m ⁷ , m ⁸ and m ⁹ are never 0 at the same time. )
<6> The compound according to <3>, wherein the compound represented by the formula (2) is a compound represented by the following formula (2-1).

(2-1)
(In formula (2-1), R ^0A , R ^1A , n ^a , q ^a and X ^A are the same as defined in formula (2) above.
Each R ^3A is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, which may be
each R ^4A is independently a hydrogen atom or a vinyl-containing phenylmethyl group,
wherein at least one of R ^4A is a vinyl-containing phenylmethyl group,
Each M ^6a is independently an integer of 0-5. )
<7> A resin obtained by using the compound according to <1> as a monomer.
<8> The resin according to <7> above, having a structure represented by the following formula (3).

(3)
(In formula (3), L is an alkylene group having 1 to 30 carbon atoms which may have a substituent, an arylene group having 6 to 30 carbon atoms which may have a substituent, an alkoxylylene group having 1 to 30 carbon atoms or a single bond, wherein the alkylene group, the arylene group, and the alkoxylylene group may contain an ether bond, a ketone bond, or an ester bond,
R ⁰ has the same definition as R ^Y ,
R ¹ is an n-valent group having 1 to 60 carbon atoms or a single bond,
R ² to R ⁵ are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, or a substituent an alkenyl group having 2 to 30 carbon atoms which may have, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, A hydroxyl group or a group in which the hydrogen atom of the hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond. often,
M ² and m ³ are each independently an integer from 0 to 8;
M ⁴ and m ⁵ are each independently an integer from 0 to 9;
However, m ² , m ³ , m ⁴ and m ⁵ are not 0 at the same time, and at least one of R ² to R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.
N is the same as the above N, where n is an integer of 2 or more, the n structural formulas in [ ] may be the same or different,
P ² to p ⁵ are synonymous with r above. )
<9> The resin according to <7> above, having a structure represented by the following formula (4).

(4)
(In formula (4), L is an alkylene group having 1 to 30 carbon atoms which may have a substituent, an arylene group having 6 to 30 carbon atoms which may have a substituent, an alkoxylylene group having 1 to 30 carbon atoms or a single bond, wherein the alkylene group, the arylene group, and the alkoxylylene group may contain an ether bond, a ketone bond, or an ester bond,
R ^0A is synonymous with R ^Y above,
R ^1A is an na ^-valent group having 1 to 30 carbon atoms or a single bond,
Each R ^2A is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms which may be substituted, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group, or a hydroxyl group is a group in which the hydrogen atom of is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond, and at least one of R ^2A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group,
N ^a has the same definition as the above N, where, when n ^a is an integer of 2 or more, the structural formulas in [ ] of n ^a number may be the same or different,
X ^A has the same definition as X above,
each M ^2a is independently an integer from 0 to 7, with the proviso that at least one m ^2a is an integer from 1 to 6;
Q ^a is each independently 0 or 1; )
<10> Contains one or more selected from the group consisting of the compound according to any one of <1> to <6> and the resin according to any one of <7> to <9> ,Composition.
<11> The composition according to <10>, further comprising a solvent.
<12> The composition according to <10> or <11>, further comprising an acid generator.
<13> The composition according to any one of <10> to <12>, further comprising a cross-linking agent.
<14> The cross-linking agent is at least one selected from the group consisting of phenol compounds, epoxy compounds, cyanate compounds, amino compounds, benzoxazine compounds, melamine compounds, guanamine compounds, glycoluril compounds, urea compounds, isocyanate compounds and azide compounds. The composition according to <13> above, which is a seed.
<15> The composition according to <13> or <14>, wherein the cross-linking agent has at least one allyl group.
<16> From the group consisting of the compound according to any one of <1> to <6> and the resin according to any one of <7> to <9>, wherein the content of the crosslinking agent is The composition according to any one of the above <13> to <15>, which is 0.1 to 100 parts by mass with respect to 100 parts by mass of the total mass of the composition containing one or more selected.
<17> The composition according to any one of <13> to <16>, further comprising a cross-linking accelerator.
<18> The composition according to <17>, wherein the cross-linking accelerator is at least one selected from the group consisting of amines, imidazoles, organic phosphines, and Lewis acids.
<19> The group consisting of the compound according to any one of <1> to <6> and the resin according to any one of <7> to <9>, in which the content of the cross-linking accelerator is The composition according to <17> or <18>, which is 0.1 to 5 parts by mass with respect to 100 parts by mass of the total mass of the composition containing one or more selected from.
<20> The composition according to any one of <10> to <19>, further comprising a radical polymerization initiator.
<21> The above <10> to <20, wherein the radical polymerization initiator is at least one selected from the group consisting of a ketone photopolymerization initiator, an organic peroxide polymerization initiator and an azo polymerization initiator. The composition according to any one of >.
<22> The content of the radical polymerization initiator consists of the compound according to any one of <1> to <6> and the resin according to any one of <7> to <9>. The composition according to any one of <10> to <21> above, which is 0.05 to 25 parts by mass with respect to 100 parts by mass of the total mass of the composition containing one or more selected from the group.
<23> The composition according to any one of <10> to <22>, which is used for forming a film for lithography.
<24> The composition according to any one of <10> to <22>, which is used for forming a permanent resist film.
<25> The composition according to any one of <10> to <22>, which is used for forming an optical component.
<26> A resist pattern comprising a step of forming a photoresist layer on a substrate using the composition according to <23>, then irradiating a predetermined region of the photoresist layer with radiation, and developing the photoresist layer. Forming method.
<27> Form an underlayer film on a substrate using the composition according to <23> above, form at least one photoresist layer on the underlayer film, and then remove a predetermined amount of the photoresist layer. A method of forming a resist pattern, comprising the steps of irradiating a region with radiation and developing the region.
<28> Forming an underlayer film on a substrate using the composition according to <23>, forming an intermediate layer film on the underlayer film using a resist intermediate layer film material, and forming the intermediate layer film. After forming at least one layer of photoresist layer thereon, a predetermined region of the photoresist layer is irradiated with radiation and developed to form a resist pattern, and then the intermediate layer film is formed using the resist pattern as a mask. is etched, the underlayer film is etched using the obtained intermediate layer film pattern as an etching mask, and the substrate is etched using the obtained underlayer film pattern as an etching mask to form a pattern on the substrate. Forming method.
<29>
A compound represented by the following formula (5).

(5)
(In formula (5), R ^5A is an N-valent group having 1 to 60 carbon atoms or a single bond,
Each M ¹⁰ is independently an integer of 1 to 3, N ^B is an integer of 1 to 4, and when N ^B is an integer of 2 or more, N structural formulas in [ ] are the same. may be different. )

According to the present invention, a compound and a resin that are highly soluble in a safe solvent and have good heat resistance and etching resistance, a composition using the same, and a method for forming a resist pattern and a circuit pattern using the composition. Forming method can be done.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. The following embodiments are examples for explaining the present invention, and the present invention is not limited only to these embodiments. The compound of the present embodiment is a compound represented by formula (0) described later, or a resin obtained by using the compound as a monomer. The compound and resin of the present embodiment can be applied to a wet process, and are useful for forming a photoresist and a photoresist underlayer film having excellent heat resistance, solubility in a safe solvent, and etching resistance, and a film for lithography. It can be used for a composition useful for formation, a pattern formation method using the composition, and the like. In addition, the compounds and resins of the present embodiment are excellent in sensitivity and resolution when used in photosensitive materials, and while maintaining high heat resistance, they can also be used as general-purpose organic solvents, other compounds, and resin components. , and is useful for forming a resist permanent film having excellent compatibility with additives.
Since the above-mentioned composition uses a compound or resin having a specific structure that has high heat resistance and high solvent solubility, deterioration of the film during high-temperature baking is suppressed, and etching resistance to oxygen plasma etching etc. is also improved. Excellent resists and underlayer films can be formed. In addition, when an underlayer film is formed, the adhesiveness to the resist layer is excellent, so an excellent resist pattern can be formed.
Further, the above-described composition has a high refractive index and is inhibited from discoloration by heat treatment over a wide range from low temperature to high temperature, and thus is useful as various optical forming compositions.

（０）
（式（０）中、Ｒ^Ｙは、水素原子、炭素数１～３０のアルキル基又は炭素数６～３０のアリール基であり、
Ｒ^Ｚは、炭素数１～６０のＮ価の基又は単結合であり、
Ｒ^Ｔは、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、Ｒ^Ｔの少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、
Ｘは、酸素原子、硫黄原子又は無架橋であることを表し、
Ｍは、各々独立して０～９の整数であり、ここで、ｍの少なくとも１つは１～９の整数であり、
Ｎは、１～４の整数であり、Ｎが２以上の整数の場合、Ｎ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｒは、各々独立して０～２の整数である。） <<Compounds and resins>>
The compound of this embodiment is represented by the following formula (0).

(0)
(In formula (0), R ^Y is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms,
R ^Z is an N-valent group or a single bond having 1 to 60 carbon atoms,
Each R ^T is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms which may be substituted, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group, or a hydroxyl group is a group in which the hydrogen atom of is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond, and at least one of ^RT is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group,
X represents an oxygen atom, a sulfur atom or non-crosslinked,
each M is independently an integer from 0 to 9, wherein at least one of m is an integer from 1 to 9;
N is an integer of 1 to 4, and when N is an integer of 2 or more, the structural formulas in N [ ] may be the same or different,
Each R is independently an integer of 0-2. )

R ^Y is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms. A linear, branched or cyclic alkyl group can be used as the alkyl group. Since R ^Y is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms, the heat resistance is relatively high and the solvent solubility is improved. Let
Further, when R ^Y is a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms, it further suppresses oxidative decomposition of the present compound, suppresses coloration, and heat-resistant. It is preferable from the viewpoint of improving the solubility in solvents.

R ^z is an N-valent group having 1 to 60 carbon atoms or a single bond, and each aromatic ring is bonded via this R ^z . N is an integer of 1 to 4, and when N is an integer of 2 or more, N structural formulas in [ ] may be the same or different. The N-valent group means an alkyl group having 1 to 60 carbon atoms when N = 1, an alkylene group having 1 to 30 carbon atoms when N = 2, and an alkylene group having 1 to 30 carbon atoms when N = 3. An alkanepropyl group of 60 and N=4 means an alkanetetrayl group having 3 to 60 carbon atoms. Examples of the N-valent group include those having a linear hydrocarbon group, a branched hydrocarbon group, or an alicyclic hydrocarbon group. Here, the alicyclic hydrocarbon group also includes a bridged alicyclic hydrocarbon group. In addition, the N-valent hydrocarbon group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 60 carbon atoms.

Each R ^T is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms which may be substituted, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group, or a hydroxyl group is a group in which the hydrogen atom of is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond. At least one of ^RT is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group. The alkyl group, alkenyl group and alkoxy group may be linear, branched or cyclic groups.
Here, the "vinylphenylmethyl group" is a group having a vinylphenylmethyl group, and examples thereof include vinylphenylmethyl groups, vinylphenylmethylmethyl groups, vinylphenylmethylphenyl groups, etc., oxygen atoms, alkylene groups, , a phenylene group, an oxyalkylene group and the like substituted with a vinylphenylmethyl group.

X represents an oxygen atom, a sulfur atom, or non-crosslinking. When X is an oxygen atom or a sulfur atom, it tends to exhibit high heat resistance, and is more preferably an oxygen atom. From the viewpoint of solubility, X is preferably non-crosslinked. In addition, each m is independently an integer of 0 to 9, and at least one of m is an integer of 1 to 9.
In formula (0), the portion represented by the naphthalene structure is a monocyclic structure when r = 0, a bicyclic structure when r = 1, and a tricyclic structure when r = 2. becomes. Each R is independently an integer of 0-2. The numerical range of m described above is determined according to the ring structure determined by r.

Although the compound represented by the formula (0) has a relatively low molecular weight, it has a high heat resistance due to the rigidity of its structure, so that it can be used even under high-temperature baking conditions. In addition, it has tertiary carbon or quaternary carbon in the molecule, so that the crystallinity is suppressed, and it is suitably used as a film-forming composition for lithography that can be used for producing a film for lithography.

In addition, the compound represented by the formula (0) has high solubility in a safe solvent, good heat resistance and etching resistance, and the resist-forming composition for lithography of the present embodiment gives a good resist pattern shape. .

Furthermore, since the compound represented by the formula (0) has a relatively low molecular weight and a low viscosity, even a substrate having a step (especially a fine space, a hole pattern, etc.) can be used to reduce the step. It is easy to improve the flatness of the film while uniformly filling all the corners, and as a result, the composition for forming an underlayer film for lithography using the same can advantageously improve the embedding and flattening properties. . Moreover, since it is a compound having a relatively high carbon concentration, it is also endowed with high etching resistance.

The compound represented by the above formula (0) has a high aromatic density and therefore a high refractive index, and is also useful as a composition for forming various optical components, since coloration is suppressed by heat treatment over a wide range from low to high temperatures. is. The compound represented by the formula (0) preferably has a quaternary carbon from the viewpoint of suppressing oxidative decomposition of the present compound, suppressing coloration, high heat resistance, and improving solvent solubility. Optical parts are used in the form of films and sheets, as well as plastic lenses (prism lenses, lenticular lenses, micro lenses, Fresnel lenses, viewing angle control lenses, contrast enhancement lenses, etc.), retardation films, electromagnetic shielding films, prisms. , optical fibers, solder resists for flexible printed wiring, plating resists, interlayer insulating films for multilayer printed wiring boards, and photosensitive optical waveguides.

[Compound represented by formula (1)]
The compound of this embodiment is preferably represented by the following formula (1). Since the compound represented by formula (1) is composed as follows, it has high heat resistance and high solvent solubility.

（１）
（式（１）中、Ｒ^０は、前記Ｒ^Ｙと同義であり、
Ｒ^１は、炭素数１～６０のｎ価の基又は単結合であり、
Ｒ^２～Ｒ^５は、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、Ｒ^２～Ｒ^５の少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、ｍ^２及びｍ^３は、各々独立して、０～８の整数であり、
Ｍ^４及びｍ^５は、各々独立して、０～９の整数であり、
但し、ｍ^２、ｍ^３、ｍ^４及びｍ^５は同時に０となることはなく、
Ｎは前記Ｎと同義であり、ここで、ｎが２以上の整数の場合、ｎ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｐ^２～ｐ^５は、前記ｒと同義である。）

(1)
(In formula (1), R ⁰ has the same meaning as R ^Y ,
R ¹ is an n-valent group having 1 to 60 carbon atoms or a single bond,
R ² to R ⁵ are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, or a substituent an alkenyl group having 2 to 30 carbon atoms which may have, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, A hydroxyl group or a group in which the hydrogen atom of the hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond. well, at least one of R ² to R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and m ² and m ³ are each independently an integer of 0 to 8 and
M ⁴ and m ⁵ are each independently an integer from 0 to 9;
However, m ² , m ³ , m ⁴ and m ⁵ are not 0 at the same time,
N is the same as the above N, where n is an integer of 2 or more, the n structural formulas in [ ] may be the same or different,
P ² to p ⁵ are synonymous with r above. )

R ⁰ has the same definition as ^RY above.
R ¹ is an n-valent group having 1 to 60 carbon atoms or a single bond, and each aromatic ring is bonded via this R ¹ . N has the same definition as the above N, and when n is an integer of 2 or more, n structural formulas in brackets [ ] may be the same or different. The n-valent group means an alkyl group having 1 to 60 carbon atoms when n=1, an alkylene group having 1 to 60 carbon atoms when n=2, and an alkylene group having 1 to 60 carbon atoms when n=3. An alkanepropyl group of 60 and n=4 indicates an alkanetetrayl group having 3 to 60 carbon atoms. Examples of the n-valent group include those having a linear hydrocarbon group, a branched hydrocarbon group, or an alicyclic hydrocarbon group. Here, the alicyclic hydrocarbon group also includes a bridged alicyclic hydrocarbon group. In addition, the n-valent hydrocarbon group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 60 carbon atoms.

R ² to R ⁵ are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, or a substituent an alkenyl group having 2 to 30 carbon atoms which may have, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, A hydroxyl group or a group in which the hydrogen atom of the hydroxyl group is substituted with a group substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ether bonds, ketone bonds, or ester bonds. may contain At least one of R ² to R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group. The alkyl group, alkenyl group and alkoxy group may be linear, branched or cyclic groups.

M ² and m ³ are each independently an integer of 0-8, and m ⁴ and m ⁵ are each independently an integer of 0-9. However, m ² , m ³ , m ⁴ and m ⁵ are not 0 at the same time. P ² to p ⁵ are each independently the same as r above.

Although the compound represented by the formula (1) has a relatively low molecular weight, it has a high heat resistance due to its structural rigidity, so that it can be used even under high-temperature baking conditions. In addition, it has tertiary carbon or quaternary carbon in the molecule, so that the crystallinity is suppressed, and it is suitably used as a film-forming composition for lithography that can be used for producing a film for lithography.

In addition, the resist-forming composition for lithography of the present embodiment has high solubility in a safe solvent, good heat resistance and etching resistance, and gives a good resist pattern shape.

Furthermore, since it has a relatively low molecular weight and low viscosity, even if it is a substrate with a step (especially a fine space or a hole pattern), it can be uniformly filled to every corner of the step and the film can be flattened. As a result, the embedding and planarization properties of the underlayer film-forming composition for lithography using the same can be enhanced relatively advantageously. Moreover, since it is a compound having a relatively high carbon concentration, it is also endowed with high etching resistance.

The compound represented by the formula (1) has a high aromatic density and thus a high refractive index, and is also useful as a composition for forming various optical components because it is inhibited from being colored by heat treatment over a wide range from low to high temperatures. . It is preferable to have quaternary carbon from the viewpoint of suppressing oxidative decomposition of the present compound, suppressing coloration, high heat resistance, and improving solvent solubility. Optical parts are used in the form of films and sheets, as well as plastic lenses (prism lenses, lenticular lenses, micro lenses, Fresnel lenses, viewing angle control lenses, contrast enhancement lenses, etc.), retardation films, electromagnetic shielding films, prisms. , optical fibers, solder resists for flexible printed wiring, plating resists, interlayer insulating films for multilayer printed wiring boards, and photosensitive optical waveguides.

（１－１） The compound represented by the formula (1) is preferably a compound represented by the following formula (1-1) from the viewpoint of ease of cross-linking and solubility in organic solvents.

(1-1)

In formula (1-1), R ⁰ , R ¹ , R ⁴ , R ⁵ , n, p ² to p ⁵ , m ⁴ and m ⁵ are as defined above, and R ⁶ to R ⁷ are each independently , a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, a substituent is an alkenyl group having 2 to 30 carbon atoms, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, and R ¹⁰ to R ¹¹ are each independently a hydrogen atom or a It is a vinylphenylmethyl group.
Here, at least one of R ¹⁰ to R ¹¹ is a vinyl-containing phenylmethyl group, and m ⁶ and m ⁷ are each independently an integer of 0 to 7. However, m ⁴ , m ⁵ , m ⁶ and m ⁷ are never 0 at the same time.

In addition, the compound represented by the formula (1-1) is preferably a compound represented by the following formula (1-2) from the viewpoint of further ease of cross-linking and solubility in organic solvents.

（１－２）

(1-2)

In formula (1-2), R ⁰ , R ¹ , R ⁶ , R ⁷ , R ¹⁰ , R ¹¹ , n, p ² to p ⁵ , m ⁶ and m ⁷ are as defined above, and R ⁸ to R ⁹ has the same definition as R ⁶ to R ⁷ above, and R ¹² to R ¹³ has the same definition as R ¹⁰ to R ¹¹ above. M ⁸ and m ⁹ are each independently an integer from 0 to 8. However, m ⁶ , m ⁷ , m ⁸ and m ⁹ are never 0 at the same time.

Further, from the viewpoint of supply of raw materials, the compound represented by the formula (1-2) is preferably a compound represented by the following formula (1a).

（１ａ）

(1a)

In the above formula (1a), R ⁰ to R ⁵ , m ² to m ⁵ and n have the same meanings as explained in the above formula (1).

From the viewpoint of solubility in organic solvents, the compound represented by the formula (1a) is more preferably a compound represented by the following formula (1b).

（１ｂ）

(1b)

In formula (1b), R ⁰ , R ¹ , R ⁴ , R ⁵ , R ¹⁰ , R ¹¹ , m ⁴ , m ⁵ , and n are the same as defined in formula ( ¹ ) above; R ⁷ , R ¹⁰ , R ¹¹ , m ⁶ and m ⁷ have the same meanings as those described in formula (1-1) above.

（１ｂ'） From the viewpoint of reactivity, the compound represented by the formula (1a) is more preferably a compound represented by the following formula (1b').

(1b')

In formula (1b), R ⁰ , R ¹ , R ⁴ , R ⁵ , R ¹⁰ , R ¹¹ , m ⁴ , m ⁵ , and n are the same as defined in formula ( ¹ ) above; R ⁷ , R ¹⁰ , R ¹¹ m ⁶ and m ⁷ have the same meanings as those described in formula (1-1) above.

From the viewpoint of solubility in organic solvents, the compound represented by the formula (1b) is more preferably a compound represented by the following formula (1c).

（１ｃ）

(1c)

In formula (1c), R ⁰ , R ¹ , R ⁶ to R ¹³ , m ⁶ to m ⁹ , and n are the same as defined in formula (1-2) above.

From the viewpoint of reactivity, the compound represented by the formula (1b') is more preferably a compound represented by the following formula (1c').

（１ｃ'）

(1c')

In formula (1c′), R ⁰ , R ¹ , R ⁶ to R ¹³ , m ⁶ to m ⁹ , and n are the same as defined in formula (1-2) above.

Specific examples of the compound represented by formula (0) are shown below, but the compound represented by formula (0) is not limited to the specific examples listed here.

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^T' has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

In the above formula, X has the same definition as described in formula (0) above, R ^{T '} has the same meaning as R ^T described in formula (0) above, and each m is independently 1 to 6 is an integer of

Specific examples of the compound represented by formula (0) are further illustrated below, but are not limited to those listed here.

In the above formula, X has the same meaning as defined in formula (0) above, and RY ^{' and RZ'} have the same meaning as RY ^{and RZ} in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and RY ^{' and RZ'} have the same meaning as RY ^{and RZ} in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as described in formula (0) above. Also, R ^Z′ has the same meaning as R ^Z described in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as described in formula (0) above. Also, R ^Z′ has the same meaning as R ^Z described in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as described in formula (0) above. Also, R ^Z′ has the same meaning as R ^Z described in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as described in formula (0) above. Also, R ^Z′ has the same meaning as R ^Z described in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as described in formula (0) above. Also, R ^Z′ has the same meaning as R ^Z described in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

In the above formula, X has the same meaning as defined in formula (0) above, and R ^Z′ has the same meaning as R ^Z defined in formula (0) above. Furthermore, at least one of OR ^4A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

Specific examples of the compound represented by formula (1) are shown below, but are not limited to those listed here.

In the compound, R ² , R ³ , R ⁴ and R ⁵ have the same meanings as those explained in formula (1) above. m ² and m ³ are integers of 0-6 and m ⁴ and m ⁵ are integers of 0-7.
However, at least one selected from R ² , R ³ , R ⁴ and R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group. m ² , m ³ , m ⁴ and m ⁵ are never 0 at the same time.

In the compound, R ² , R ³ , R ⁴ and R ⁵ have the same meanings as those explained in formula (1) above. m ² and m ³ are integers of 0-6 and m ⁴ and m ⁵ are integers of 0-7.
However, at least one selected from R ² , R ³ , R ⁴ and R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group. m ² , m ³ , m ⁴ and m ⁵ are never 0 at the same time.

In the compound, R ² , R ³ , R ⁴ and R ⁵ have the same meanings as those explained in formula (1) above. M ² and m ³ are integers of 0-6 and m ⁴ and m ⁵ are integers of 0-7.
provided that at least one selected from R ² , R ³ , R ⁴ and R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and m ² , m ³ , m ⁴ and m ⁵ are cannot be 0 at the same time.

In the compound, R ² , R ³ , R ⁴ and R ⁵ have the same meanings as those explained in formula (1) above. M ² and m ³ are integers of 0-6 and m ⁴ and m ⁵ are integers of 0-7.
provided that at least one selected from R ² , R ³ , R ⁴ and R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and m ² , m ³ , m ⁴ and m ⁵ are cannot be 0 at the same time.

In the compound, R ¹⁰ , R ¹¹ , R ¹² and R ¹³ have the same definitions as those described in formula (1-2) above, wherein at least one of R ¹⁰ to R ¹³ has a hydroxyl hydrogen atom It is a group substituted with a vinyl-containing phenylmethyl group.

The compound represented by the formula (1) is particularly preferably a compound represented by the following formulas (bif-1) to (bif-10) from the viewpoint of solubility in an organic solvent (specific examples in which R ¹⁰ to R ¹³ have the same definitions as above).

（ｂｉｆ－１）

(bif-1)

（ｂｉｆ－２）

(bif-2)

（ｂｉｆ－３）

(bif-3)

（ｂｉｆ－４）

(bif-4)

（ｂｉｆ－５）

(bif-5)

（ｂｉｆ－６）

(bif-6)

（ｂｉｆ－７）

(bif-7)

（ｂｉｆ－８）

(bif-8)

（ｂｉｆ－９）

(bif-9)

（ｂｉｆ－１０）

(bif-10)

Specific examples of the compound represented by formula (0) are further illustrated below, but the compound represented by formula (0) is not limited to the specific examples listed here.

In the above formula, R ⁰ , R ¹ and n are the same as those described in formula (1-1) above, and R ^10′ and R ^11′ are R ¹⁰ and R described in formula (1-1) above. ¹¹ , and R ^4′ and R ^5′ are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an optionally substituted carbon number of 6 to 30 aryl groups, optionally substituted alkenyl groups having 2 to 30 carbon atoms, alkoxy groups having 1 to 30 carbon atoms which may have substituents, halogen atoms, nitro groups, amino groups, A carboxylic acid group, a thiol group, a hydroxyl group, or a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, or the alkoxy group is an ether bond, a ketone bond, or may contain an ester bond, at least one of R ^10′ and R ^11′ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and m ^4′ and m ^5′ are 0 to is an integer of 8, m ^{10 ′} and m ^{11 ′} are integers of 1 to 9, and m ^{4 ′} + m ^{10 ′} and m ^{4 ′} + m ^{11 ′} are each independently integers of 1 to 9.
R ⁰ is, for example, a methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, triacontyl group, phenyl group, naphthyl group , anthracene group, pyrenyl group, biphenyl group and heptacene group.
R ^4′ and R ^5′ are, for example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, triacontyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group , naphthyl group, anthracene group, pyrenyl group, biphenyl group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom, A thiol group can be mentioned.
Each example of R ⁰ , R ^4′ and R ^5′ includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in the above formula (1-2), R ¹⁶ is a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, It is a 6-30 divalent aryl group or a C2-30 divalent alkenyl group.
R ¹⁶ is, for example, a methylene group, an ethylene group, a propene group, a butene group, a pentene group, a hexene group, a heptene group, an octene group, a nonene group, a decene group, an undecene group, a dodecene group, a triacontene group, a cyclopropene group, cyclobutene group, cyclopentene group, cyclohexene group, cycloheptene group, cyclooctene group, cyclononene group, cyclodecene group, cycloundecene group, cyclododecene group, cyclotriacontene group, divalent norbornyl group, divalent adamantyl group, divalent phenyl group, divalent naphthyl group, divalent anthracene group, divalent pyrene group, divalent biphenyl group, divalent heptacene group, divalent vinyl group, divalent allyl group, divalent triaconte A nyl group is mentioned.
Each example of R ¹⁶ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in formula (1-2) above, and R ¹⁴ each independently represents a linear, branched or cyclic alkyl having 1 to 30 carbon atoms. an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, or a thiol group, and m ¹⁴ is an integer of 0 to 5. M ^14′ is an integer of 0-4 and m ¹⁴ is an integer of 0-5.
R ¹⁴ is, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, triacontyl, cyclopropyl, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, anthracene group, pyrenyl group, biphenyl group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom and thiol group. .
Each example of R ¹⁴ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ⁰ , R ^4′ , R ^5′ , m ^4′ , m ^5′ , m ^10′ and m ^11′ are as defined above, and R ^1′ is a group having 1 to 60 carbon atoms. be.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in formula (1-2) above, and R ¹⁴ each independently represents a linear, branched or cyclic alkyl having 1 to 30 carbon atoms. group, an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group, m ¹⁴ is an integer of 0 to 5, m ^14′ is an integer of 0-4 and m ^14″ is an integer of 0-3.
R ¹⁴ is, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, triacontyl, cyclopropyl, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, anthracene group, pyrenyl group, biphenyl group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom and thiol group. .
Each example of R ¹⁴ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in formula (1-2) above, R ¹⁵ is a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, An aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, or a thiol group.
R ¹⁵ is, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, triacontyl, cyclopropyl, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, anthracene group, pyrenyl group, biphenyl group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom and thiol group. .
Each example of R ¹⁵ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same meanings as those explained in formula (1-2) above.

From the viewpoint of raw material availability, the compound represented by the formula (0) is more preferably a compound represented by the following.

In the above formula, R ¹⁰ to R ¹³ have the same meanings as those explained in formula (1-2) above.
Furthermore, the compound represented by the above formula (0) preferably has the following structure from the viewpoint of etching resistance.

In the above formula, R ^0A has the same meaning as in formula R ^Y , R ^1A' has the same meaning as R ^Z , and R ¹⁰ to R ¹³ have the same meaning as in formula (1-2) above.

In the above formula, R ^0A has the same meaning as in formula R ^Y , R ^1A' has the same meaning as R ^Z , and R ¹⁰ to R ¹³ have the same meaning as in formula (1-2) above. Each R ¹⁴ is independently a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, or 1 to 30 carbon atoms. is an alkoxy group, a halogen atom or a thiol group, and m ^14' is an integer of 0-4.
R ¹⁴ is, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, triacontyl, cyclopropyl, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, anthracene group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom and thiol group.
Each example of R ¹⁴ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in formula (1-2) above, R ¹⁵ is a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, An aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, or a thiol group.
R ¹⁵ is, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, triacontyl, cyclopropyl, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, anthracene group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom and thiol group.
Each example of R ¹⁵ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in the above formula (1-2), R ¹⁶ is a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, It is a 6-30 divalent aryl group or a C2-30 divalent alkenyl group.
R ¹⁶ is, for example, a methylene group, an ethylene group, a propene group, a butene group, a pentene group, a hexene group, a heptene group, an octene group, a nonene group, a decene group, an undecene group, a dodecene group, a triacontene group, a cyclopropene group, cyclobutene group, cyclopentene group, cyclohexene group, cycloheptene group, cyclooctene group, cyclononene group, cyclodecene group, cycloundecene group, cyclododecene group, cyclotriacontene group, divalent norbonyl group, divalent adamantyl group, divalent A phenyl group, a divalent naphthyl group, a divalent anthracene group, a divalent heptacene group, a divalent vinyl group, a divalent allyl group, and a divalent triacontenyl group.
Each example of R ¹⁶ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in formula (1-2) above, and R ¹⁴ each independently represents a linear, branched or cyclic alkyl having 1 to 30 carbon atoms. an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, ^an alkoxy group having 1 to 30 carbon atoms, a halogen atom, or a thiol group;
R ¹⁴ is, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, triacontyl, cyclopropyl, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, anthracene group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom and thiol group.
Each example of R ¹⁴ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in formula (1-2) above, and R ¹⁴ each independently represents a linear, branched or cyclic alkyl having 1 to 30 carbon atoms. an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, or a thiol group, and m ¹⁴ is an integer of 0 to 5.
R ¹⁴ is, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, triacontyl, cyclopropyl, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cycloundecyl group, cyclododecyl group, cyclotriacontyl group, norbornyl group, adamantyl group, phenyl group, naphthyl group, anthracene group, heptacene group, vinyl group, allyl group, triacontenyl group, methoxy group, ethoxy group, triacontoxy group, fluorine atom, chlorine atom, bromine atom, iodine atom and thiol group.
Each example of R ¹⁴ above includes isomers. For example, butyl groups include n-butyl, isobutyl, sec-butyl, and tert-butyl groups.

In the above formula, R ¹⁰ to R ¹³ have the same meanings as those explained in formula (1-2) above.
From the viewpoint of heat resistance, the compound preferably has a dibenzoxanthene skeleton.

From the viewpoint of raw material availability, the compound represented by the formula (0) is more preferably a compound represented by the following.

In the above formula, R ¹⁰ to R ¹³ have the same meanings as those explained in formula (1-2) above. A compound having a dibenzoxanthene skeleton is preferable from the viewpoint of heat resistance.

The compound represented by the formula (0) preferably has the following structure from the viewpoint of raw material availability.

前記式中、Ｒ^０Ａは前記式Ｒ^Ｙと同義であり、Ｒ^１Ａ'はＲ^Ｚと同義であり、Ｒ^１０～Ｒ^１３は、前記式（１－２）で説明したものと同義である。前記式は、耐熱性の観点からキサンテン骨格を有する化合物が好ましい。

In the above formula, R ^0A has the same meaning as in formula R ^Y , R ^1A' has the same meaning as R ^Z , and R ¹⁰ to R ¹³ have the same meaning as in formula (1-2) above. In the above formula, a compound having a xanthene skeleton is preferable from the viewpoint of heat resistance.

In the above formula, R ¹⁰ to R ¹³ have the same definitions as those described in formula (1-2) above, and R ¹⁴ , R ¹⁵ , R ¹⁶ , m ¹⁴ and m ^14' have the same definitions as above.

(Compound represented by formula (5))
As a raw material for the compound represented by the formula (0), for example, a polyphenol raw material can be used, and for example, a compound represented by the following formula (5) can be used.

（５）
（式（５）中、Ｒ^５Ａは、炭素数１～６０のＮ価の基又は単結合であり、
Ｍ^１０は、各々独立して１～３の整数であり
Ｎ^Ｂは、１～４の整数であり、Ｎ^Ｂが２以上の整数の場合、Ｎ個の［ ］内の構造式は同一であっても異なっていてもよい。)

(5)
(In formula (5), R ^5A is an N-valent group having 1 to 60 carbon atoms or a single bond,
Each M ¹⁰ is independently an integer of 1 to 3, N ^B is an integer of 1 to 4, and when N ^B is an integer of 2 or more, N structural formulas in [ ] are the same. may be different. )

Catechol, resorcinol, and pyrogallol are used as polyphenol raw materials for the compound of the above formula (5), and examples thereof include the following structures.

In the above formula, R ^1A' has the same meaning as R ^Z , and R ¹⁴ , R ¹⁵ , R ¹⁶ , m ¹⁴ and m ^14' have the same meanings as above.

[Method for producing compound represented by formula (0)]
The compound represented by Formula (0) used in this embodiment can be appropriately synthesized by applying a known technique, and the synthesis technique is not particularly limited. For example, taking the compound represented by formula (1) as an example, the compound represented by formula (0) can be synthesized as follows.
For example, the compound represented by formula (1) can be obtained by subjecting biphenols, binaphthols or bianthracenols and corresponding aldehydes or ketones to a polycondensation reaction under normal pressure in the presence of an acid catalyst. A compound represented by formula (1) can be obtained. Also, a vinyl-containing phenylmethyl group can be introduced into at least one phenolic hydroxyl group of the compound by a known method. Also, if necessary, it can be carried out under pressure.

Examples of the biphenols include biphenol, methylbiphenol, methoxybinaphthol and the like, but are not particularly limited thereto. These can be used individually by 1 type or in combination of 2 or more types. Among these, it is more preferable to use biphenol from the viewpoint of stable supply of raw materials.

Examples of the binaphthols include, but are not limited to, binaphthol, methylbinaphthol, methoxybinaphthol, and the like. These can be used individually by 1 type or in combination of 2 or more types. Among these, it is more preferable to use binaphthol from the viewpoint of increasing the carbon atom concentration and improving the heat resistance.

Examples of the bianthracenols include, but are not limited to, bianthracenol, methylbianthracenol, methoxybianthracenol, and the like. These can be used individually by 1 type or in combination of 2 or more types. Among these, it is more preferable to use bianthracenol from the viewpoint of increasing the carbon atom concentration and improving the heat resistance.

Examples of the aldehydes include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, Naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde, furfural and the like can be mentioned, but are not particularly limited to these. These can be used individually by 1 type or in combination of 2 or more types. Among these, benzaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, cyclohexylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrene It is preferable to use carbaldehyde and furfural in terms of providing high heat resistance, and benzaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, cyclohexylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde. , phenanthrenecarbaldehyde, pyrenecarbaldehyde, and furfural are more preferable because of their high etching resistance.

Examples of the ketones include acetone, methyl ethyl ketone, cyclobutanone, cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone, adamantanone, fluorenone, benzofluorenone, acenaphthenequinone, acenaphthenone, anthraquinone, acetophenone, and diacetylbenzene. , triacetylbenzene, acetonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, benzophenone, diphenylcarbonylbenzene, triphenylcarbonylbenzene, benzonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl and the like. is not particularly limited to These can be used individually by 1 type or in combination of 2 or more types. Among these, cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone, adamantanone, fluorenone, benzofluorenone, acenaphthenequinone, acenaphthenone, anthraquinone, acetophenone, diacetylbenzene, triacetylbenzene, acetonaphthone, diphenylcarbonyl Naphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, benzophenone, diphenylcarbonylbenzene, triphenylcarbonylbenzene, benzonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, and diphenylcarbonylbiphenyl are preferably used from the viewpoint of imparting high heat resistance. diacetylbenzene, triacetylbenzene, acetonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, benzophenone, diphenylcarbonylbenzene, triphenylcarbonylbenzene, benzonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, It has high etching resistance and is more preferable.

As the aldehyde group or ketones, it is preferable to use an aldehyde having an aromatic group or a ketone having an aromatic group in order to achieve both high heat resistance and high etching resistance.

The acid catalyst used in the reaction is not particularly limited and can be appropriately selected from known catalysts. As such acid catalysts, inorganic acids and organic acids are widely known. , adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid , organic acids such as naphthalenedisulfonic acid, Lewis acids such as zinc chloride, aluminum chloride, iron chloride, and boron trifluoride, or solid acids such as silicotungstic acid, phosphotungstic acid, silicomolybdic acid, and phosphomolybdic acid. Examples include, but are not limited to, these. Among these, organic acids and solid acids are preferable from the viewpoint of production, and it is preferable to use hydrochloric acid or sulfuric acid from the viewpoint of production such as availability and ease of handling. In addition, about an acid catalyst, it can be used individually by 1 type or in combination of 2 or more types. In addition, the amount of the acid catalyst used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. Parts by mass are preferred.

A reaction solvent may be used in the reaction. The reaction solvent is not particularly limited as long as the reaction between the aldehyde group or ketones used and the biphenols, binaphthols or bianthracenediol proceeds, and can be appropriately selected from known solvents and used. can. Examples include water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, or mixed solvents thereof. In addition, a solvent can be used individually by 1 type or in combination of 2 or more types.

In addition, the amount of these solvents used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. is preferably in the range of Furthermore, the reaction temperature in the above reaction can be appropriately selected according to the reactivity of the reaction raw materials, and is not particularly limited, but is usually in the range of 10 to 200°C.

In order to obtain the compound represented by the formula (1) of the present embodiment, the reaction temperature is preferably high, specifically in the range of 60 to 200°C. In addition, the reaction method can be appropriately selected from known methods and is not particularly limited. , binaphthols or bianthracenediol, aldehydes or ketones are added dropwise in the presence of a catalyst. After completion of the polycondensation reaction, isolation of the obtained compound can be carried out according to a conventional method, and is not particularly limited. For example, in order to remove unreacted raw materials, catalysts, etc. present in the system, a general method such as raising the temperature of the reactor to 130-230°C and removing volatile matter at about 1-50 mmhg is adopted. Thus, the desired compound can be obtained.

As preferable reaction conditions, 1.0 mol to excess of biphenols, binaphthols or bianthracenediol and 0.001 to 1 mol of an acid catalyst are used per 1 mol of aldehyde groups or ketones, and normal pressure is used. , at 50 to 150° C. for about 20 minutes to 100 hours.

After completion of the reaction, the desired product can be isolated by a known method. For example, the reaction solution is concentrated, pure water is added to precipitate the reaction product, cooled to room temperature, filtered and separated, the obtained solid is filtered, dried, and then subjected to column chromatography. , by-products are separated and purified, and the solvent is distilled off, filtered and dried to obtain the target compound represented by the above formula (1).

A method for introducing a vinyl-containing phenylmethyl group into at least one phenolic hydroxyl group of a polyphenol compound is known. For example, a vinyl-containing phenylmethyl group can be introduced into at least one phenolic hydroxyl group of a polyphenol compound as follows. A compound for introducing a vinyl-containing phenylmethyl group can be synthesized by a known method or easily available, and examples thereof include vinylbenzyl chloride, vinylbenzyl bromide and vinylbenzyl iodide, but are not particularly limited.

For example, the polyphenol compound and the above-mentioned compound for introducing a vinylphenylmethyl group are dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate, or the like. Subsequently, in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide, etc., the mixture is reacted at normal pressure at 20 to 150° C. for 6 to 72 hours. After neutralizing the reaction solution with an acid and adding distilled water to precipitate a white solid, the separated solid is washed with distilled water, or the solvent is evaporated to dryness and, if necessary, washed with distilled water, By drying, a compound in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group can be obtained.

The timing of introducing the vinyl-containing phenylmethyl group may be not only after the condensation reaction between the binaphthols and the aldehydes or ketones, but also before the condensation reaction. Moreover, you may perform after manufacturing resin mentioned later.

A method of introducing a hydroxyalkyl group into at least one phenolic hydroxyl group of a polyphenol compound and introducing a vinylphenylmethyl group into the hydroxyl group is also known. A hydroxyalkyl group may be introduced into a phenolic hydroxyl group via an oxyalkyl group. For example, hydroxyalkyloxyalkyl groups and hydroxyalkyloxyalkyloxyalkyl groups are introduced.
For example, a hydroxyalkyl group can be introduced into at least one phenolic hydroxyl group of the compound as follows, and a vinylphenylmethyl group can be introduced into the hydroxy group.
A compound for introducing a hydroxyalkyl group can be synthesized by a known method or easily obtained. Examples include chloroethanol, bromoethanol, 2-chloroethyl acetate, 2-bromoethyl acetate, 2-iodoethyl acetate, ethylene oxide. , propylene oxide, butylene oxide, ethylene carbonate, propylene carbonate, and butylene carbonate, but are not particularly limited.

For example, a polyphenol compound and a compound for introducing a hydroxyalkyl group are dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), or propylene glycol monomethyl ether acetate. Subsequently, in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide, etc., the mixture is reacted at normal pressure at 20 to 150° C. for 6 to 72 hours. After neutralizing the reaction solution with an acid and adding distilled water to precipitate a white solid, the separated solid is washed with distilled water, or the solvent is evaporated to dryness and, if necessary, washed with distilled water, By drying, a compound in which a hydrogen atom of a hydroxyl group is substituted with a hydroxyalkyl group can be obtained.

For example, when 2-chloroethyl acetate, 2-bromoethyl acetate, or 2-iodoethyl acetate is used, an acetoxyethyl group is introduced, followed by deacylation to introduce a hydroxyethyl group.
Further, for example, when ethylene carbonate, propylene carbonate, or butylene carbonate is used, alkylene carbonate is added to cause a decarboxylation reaction, thereby introducing a hydroxyalkyl group.
Thereafter, the above compound and a compound for introducing a vinylphenylmethyl group are dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate, or the like. Subsequently, in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide, etc., the mixture is reacted at normal pressure at 20 to 150° C. for 6 to 72 hours. After neutralizing the reaction solution with an acid and adding distilled water to precipitate a white solid, the separated solid is washed with distilled water, or the solvent is evaporated to dryness and, if necessary, washed with distilled water, By drying, a compound in which the hydrogen atom of the hydroxy group is substituted with a vinyl-containing phenylmethyl group can be obtained.

In this embodiment, the vinyl-containing phenylmethyl group reacts in the presence of radicals or acids/alkalis to change the solubility in acids, alkalis or organic solvents used in coating solvents and developers. The vinyl-containing phenylmethyl group preferably has the property of causing a chain reaction in the presence of radicals or acids/alkalis in order to enable pattern formation with higher sensitivity and resolution.

[Resin obtained by using the compound represented by the formula (0) as a monomer]
The compound represented by formula (0) can be used as it is as a film-forming composition for lithography. Moreover, it can also be used as a resin obtained by using the compound represented by the formula (0) as a monomer. In other words, the resin of this embodiment is a resin having a unit structure derived from the general formula (0). For example, it can be used as a resin obtained by reacting the compound represented by the formula (0) with a compound having cross-linking reactivity.
Examples of the resin obtained by using the compound represented by the formula (0) as a monomer include those having a structure represented by the following formula (3). That is, the composition of this embodiment may contain a resin having a structure represented by the following formula (3).

（３）
（式（３）中、Ｌは、置換基を有していてもよい炭素数１～３０のアルキレン基、置換基を有していてもよい炭素数６～３０のアリーレン基、置換基を有していてもよい炭素数１～３０のアルコキシレン基又は単結合であり、前記アルキレン基、前記アリーレン基、前記アルコキシレン基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、
Ｒ^０は、前記Ｒ^Ｙと同義であり、
Ｒ^１は、炭素数１～６０のｎ価の基又は単結合であり、
Ｒ^２～Ｒ^５は、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、
Ｍ^２及びｍ^３は、各々独立して、０～８の整数であり、
Ｍ^４及びｍ^５は、各々独立して、０～９の整数であり、
但し、ｍ^２、ｍ^３、ｍ^４及びｍ^５は同時に０となることはなく、Ｒ^２～Ｒ^５の少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基である。
Ｎは前記Ｎと同義であり、ここで、ｎが２以上の整数の場合、ｎ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｐ^２～ｐ^５は、前記ｒと同義である。）

(3)
(In formula (3), L is an alkylene group having 1 to 30 carbon atoms which may have a substituent, an arylene group having 6 to 30 carbon atoms which may have a substituent, an alkoxylylene group having 1 to 30 carbon atoms or a single bond, wherein the alkylene group, the arylene group, and the alkoxylylene group may contain an ether bond, a ketone bond, or an ester bond,
R ⁰ has the same definition as R ^Y ,
R ¹ is an n-valent group having 1 to 60 carbon atoms or a single bond,
R ² to R ⁵ are each independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, or a substituent an alkenyl group having 2 to 30 carbon atoms which may have, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, A hydroxyl group or a group in which the hydrogen atom of the hydroxyl group is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond. often,
M ² and m ³ are each independently an integer from 0 to 8;
M ⁴ and m ⁵ are each independently an integer from 0 to 9;
However, m ² , m ³ , m ⁴ and m ⁵ are not 0 at the same time, and at least one of R ² to R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.
N is the same as the above N, where n is an integer of 2 or more, the n structural formulas in [ ] may be the same or different,
P ² to p ⁵ are synonymous with r above. )

In formula (3), L is an optionally substituted alkylene group having 1 to 30 carbon atoms, an arylene group having 6 to 30 carbon atoms which may be substituted, and a substituent is an alkoxylene group having 1 to 30 carbon atoms or a single bond which may be substituted. The alkylene group, the arylene group, and the alkoxylene group may contain an ether bond, a ketone bond, or an ester bond. The alkylene group and alkoxylylene group may be linear, branched or cyclic groups.

In formula (3), R ⁰ , R ¹ , R ² to R ⁵ , m ² and m ³ , m ⁴ and m ⁵ , p ² to p ⁵ and n have the same meanings as in formula (1) above. However, m ² , m ³ , m ⁴ and m ⁵ are not 0 at the same time, and at least one of R ² to R ⁵ is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

[Method for producing a resin obtained by using a compound represented by the formula (0) as a monomer]
The resin of the present embodiment is obtained by reacting the compound represented by the formula (0) with a compound having cross-linking reactivity. As the cross-linkable compound, known compounds can be used without particular limitation as long as they can oligomerize or polymerize the compound represented by the formula (0). Specific examples thereof include, but are not limited to, aldehydes, ketones, carboxylic acids, carboxylic acid halides, halogen-containing compounds, amino compounds, imino compounds, isocyanates, unsaturated hydrocarbon group-containing compounds, and the like.

Specific examples of the resin obtained by using the compound represented by the formula (0) as a monomer include, for example, the compound represented by the formula (0) and aldehyde and/or ketone, which are cross-linking reactive compounds. Examples thereof include resins that have been novolacified by a condensation reaction or the like.

Examples of aldehydes used in novolac-forming the compound represented by formula (0) include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, Examples include, but are not limited to, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde, furfural and the like. Examples of ketones include the ketones described above. Among these, formaldehyde is more preferable. In addition, these aldehydes and/or ketones can be used individually by 1 type or in combination of 2 or more types. The amount of the aldehyde and/or ketone used is not particularly limited, but is preferably 0.2 to 5 mol, more preferably 0.5 mol, per 1 mol of the compound represented by the formula (0). ~2 moles.

A catalyst can also be used in the condensation reaction between the compound represented by formula (0) and the aldehyde and/or ketone. The acid catalyst used here is not particularly limited and can be appropriately selected from known ones. As such acid catalysts, inorganic acids and organic acids are widely known. , adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid , organic acids such as naphthalenedisulfonic acid, Lewis acids such as zinc chloride, aluminum chloride, iron chloride, and boron trifluoride, or solid acids such as silicotungstic acid, phosphotungstic acid, silicomolybdic acid, and phosphomolybdic acid. Examples include, but are not limited to, these. Among these, organic acids and solid acids are preferable from the viewpoint of production, and hydrochloric acid or sulfuric acid is preferable from the viewpoint of production such as availability and ease of handling. In addition, about an acid catalyst, it can be used individually by 1 type or in combination of 2 or more types.

In addition, the amount of the acid catalyst used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. Parts by mass are preferred. However, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, norbornadiene, 5-vinylnorborn-2-ene, α-pinene, β-pinene Aldehydes are not necessarily required in the case of a copolymerization reaction with a compound having a non-conjugated double bond such as limonene.

A reaction solvent can also be used in the condensation reaction between the compound represented by formula (0) and the aldehyde and/or ketone. The reaction solvent in this polycondensation can be appropriately selected and used from among known solvents, and is not particularly limited. Examples thereof include water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, and mixed solvents thereof. exemplified. In addition, a solvent can be used individually by 1 type or in combination of 2 or more types.

In addition, the amount of these solvents used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. is preferably in the range of Furthermore, the reaction temperature can be appropriately selected according to the reactivity of the reaction raw materials, and is not particularly limited, but is usually in the range of 10 to 200°C. In addition, the reaction method can be appropriately selected from known methods and is not particularly limited, but a method of charging the compound represented by the formula (0), an aldehyde and/or ketones, and a catalyst all at once, There is a method of dropping the compound represented by the formula (0), aldehyde and/or ketones in the presence of a catalyst.

After completion of the polycondensation reaction, isolation of the obtained compound can be carried out according to a conventional method, and is not particularly limited. For example, in order to remove unreacted raw materials, catalysts, etc. present in the system, a general method such as raising the temperature of the reactor to 130-230°C and removing volatile matter at about 1-50 mmhg is adopted. As a result, the desired novolak resin can be obtained.

Here, the resin having the structure represented by the formula (3) may be a homopolymer of the compound represented by the formula (0), or may be a copolymer with other phenols. may Examples of copolymerizable phenols include phenol, cresol, dimethylphenol, trimethylphenol, butylphenol, phenylphenol, diphenylphenol, naphthylphenol, resorcinol, methylresorcinol, catechol, butylcatechol, methoxyphenol, methoxyphenol, Examples include, but are not limited to, propylphenol, pyrogallol, thymol, and the like.

Moreover, the resin having the structure represented by the formula (3) may be one obtained by copolymerizing with a polymerizable monomer other than the other phenols described above. Examples of such copolymerizable monomers include naphthol, methylnaphthol, methoxynaphthol, dihydroxynaphthalene, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, and 4-vinylcyclohexene. , norbornadiene, vinylnorbornaene, pinene, limonene and the like, but are not particularly limited thereto. The resin having the structure represented by the formula (3) is a binary or higher (for example, two to four) copolymer of the compound represented by the formula (1) and the above phenols. Even if the compound represented by the formula (1) and the copolymerization monomer described above are two or more (for example, two to quaternary) copolymers, the compound represented by the formula (1) It may be a ternary or more (for example, ternary to quaternary) copolymer of the compound, the above-described phenols, and the above-described copolymerization monomer.

The molecular weight of the resin having the structure represented by the formula (3) is not particularly limited, but the weight average molecular weight (Mw) in terms of polystyrene is preferably 500 to 30,000, more preferably 750 to 750. 20,000. In addition, from the viewpoint of increasing the cross-linking efficiency and suppressing volatile components during baking, the resin having the structure represented by the formula (3) has a degree of dispersion (weight average molecular weight Mw/number average molecular weight Mn) of 1.2. Those within the range of ~7 are preferred. The Mn can be determined by the method described in the examples below.

It is preferable that the resin having the structure represented by the formula (3) has high solubility in a solvent from the viewpoint of easier application of the wet process. More specifically, when using 1-methoxy-2-propanol (PGME) and/or propylene glycol monomethyl ether acetate (PGMEA) as a solvent, these compounds and/or resins have a solubility of 10% by mass or more in the solvent. is preferred. Here, the solubility in PGME and/or PGMEA is defined as "mass of resin÷(mass of resin+mass of solvent)×100 (mass %)". For example, when 10 g of the resin dissolves in 90 g of PGMEA, the solubility of the resin in PGMEA is "10% by mass or more", and when it does not dissolve, "less than 10% by mass".

[Compound represented by formula (2)]
The compound of the present embodiment is also preferably represented by the following formula (2). Since the compound represented by the formula (2) is composed as follows, it has high heat resistance and high solvent solubility.

（２）
（式（２）中、Ｒ^０Ａは、前記Ｒ^Ｙと同義であり、
Ｒ^１Ａは、炭素数１～３０のｎ^ａ価の基又は単結合であり、
Ｒ^２Ａは、各々独立して、置換基を有していてもよい炭素数１～３０のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基、水酸基又は水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合またはエステル結合を含んでいてもよく、ここで、Ｒ^２Ａの少なくとも１つは水酸基の水素原子が含ビニルフェニルメチル基で置換された基であり、
Ｎ^ａは、前記Ｎと同義であり、ここで、ｎ^ａが２以上の整数の場合、ｎ^ａ個の［ ］内の構造式は同一であっても異なっていてもよく、
Ｘ^Ａは、前記Ｘと同義あり、
Ｍ^２ａは、各々独立して、０～７の整数であり、但し、少なくとも１つのｍ^２ａは１～７の整数であり、
Ｑ^ａは、各々独立して、０又は１である。）

(2)
(In formula (2), R ^0A is synonymous with R ^Y ,
R ^1A is an na ^-valent group having 1 to 30 carbon atoms or a single bond,
Each R ^2A is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms which may be substituted, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group, or a hydroxyl group is a group in which the hydrogen atom of is substituted with a vinyl-containing phenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond, and at least one of R ^2A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group,
N ^a has the same definition as the above N, where, when n ^a is an integer of 2 or more, the structural formulas in [ ] of n ^a number may be the same or different,
X ^A has the same definition as X above,
each M ^2a is independently an integer from 0 to 7, with the proviso that at least one m ^2a is an integer from 1 to 7;
Q ^a is each independently 0 or 1; )

In formula (2), R ^0A has the same meaning as ^RY above.
R ^1A is a na ^- valent group having 1 to 60 carbon atoms or a single bond. ^Na has the same definition as N above and is an integer of 1-4. In formula (2), when n ^a is an integer of 2 or more, n ^a structural formulas in brackets [ ] may be the same or different.
The n ^a- valent group means an alkyl group having 1 to 60 carbon atoms when n ^a =1, an alkylene group having 1 to 30 carbon atoms when n ^a =2, and an alkylene group having 1 to 30 carbon atoms when n ^a =3. An alkanepropyl group having 2 to 60 carbon atoms, and n ^a =4 means an alkanetetrayl group having 3 to 60 carbon atoms. Examples of the n-valent group include those having a linear hydrocarbon group, a branched hydrocarbon group, or an alicyclic hydrocarbon group. Here, the alicyclic hydrocarbon group also includes a bridged alicyclic hydrocarbon group. In addition, the n-valent hydrocarbon group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 60 carbon atoms.

Each R ^2A is independently an optionally substituted alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms which may be substituted, and a substituent. an alkenyl group having 2 to 30 carbon atoms which may be substituted, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxyl group, or a hydroxyl group is a group in which the hydrogen atom of is substituted with a vinylphenylmethyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group may contain an ether bond, a ketone bond, or an ester bond, wherein , R ^2A is a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group. The alkyl group, alkenyl group and alkoxy group may be linear, branched or cyclic groups.

X ^A has the same definition as X above, and each independently represents an oxygen atom, a sulfur atom, or no cross-linking. Here, when X ^A is an oxygen atom or a sulfur atom, it is preferable because it tends to exhibit high heat resistance, and an oxygen atom is more preferable. ^XA is preferably non-crosslinked from the viewpoint of solubility.

Each M ^2a is independently an integer of 0-6. provided that at least one ^m2a is an integer of 1-6. Q ^a is each independently 0 or 1; In formula (2), the naphthalene structure is a monocyclic structure when q ^a =0, and a bicyclic structure when q ^a =1. The numerical range of ^m2a described above is determined according to the ring structure determined by ^qa .

Although the compound represented by the formula (2) has a relatively low molecular weight, it has a high heat resistance due to the rigidity of its structure, so that it can be used even under high-temperature baking conditions. In addition, it has tertiary carbon or quaternary carbon in the molecule, so that the crystallinity is suppressed, and it is suitably used as a film-forming composition for lithography that can be used for producing a film for lithography.

In addition, the resist-forming composition for lithography of the present embodiment has high solubility in a safe solvent, good heat resistance and etching resistance, and gives a good resist pattern shape.

Furthermore, since it has a relatively low molecular weight and low viscosity, even if it is a substrate with a step (especially a fine space or a hole pattern), it can be uniformly filled to every corner of the step and the film can be flattened. As a result, the embedding and planarization properties of the underlayer film-forming composition for lithography using the same can be enhanced relatively advantageously. Moreover, since it is a compound having a relatively high carbon concentration, it is also endowed with high etching resistance.

Since the aromatic density is high, the refractive index is high, and coloration is suppressed by heat treatment over a wide range from low temperature to high temperature, so it is also useful as a composition for forming various optical parts. It is preferable to have quaternary carbon from the viewpoint of suppressing oxidative decomposition of the present compound, suppressing coloration, high heat resistance, and improving solvent solubility. Optical parts are used in the form of films and sheets, as well as plastic lenses (prism lenses, lenticular lenses, micro lenses, Fresnel lenses, viewing angle control lenses, contrast enhancement lenses, etc.), retardation films, electromagnetic shielding films, prisms. , optical fibers, solder resists for flexible printed wiring, plating resists, interlayer insulating films for multilayer printed wiring boards, and photosensitive optical waveguides.

（２－１） The compound represented by the formula (2) is preferably a compound represented by the following formula (2-1) from the viewpoint of ease of cross-linking and solubility in organic solvents.

(2-1)

In formula (2-1), R ^0A , R ^1A , n ^a and q ^a and X ^A are the same as defined in formula (2) above. R ^3A is an optionally substituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an optionally substituted aryl group having 6 to 30 carbon atoms, a substituted an alkenyl group having 2 to 30 carbon atoms which may have a group, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, which may be the same or different in the same naphthalene ring or benzene ring; may
Each R ^4A is independently a hydrogen atom or a vinyl-containing phenylmethyl group, wherein at least one of R ^4A is a vinyl-containing phenylmethyl group, m ^6a is each independently 0 to 5 is an integer of

When the compound represented by the formula (2-1) is used as a film-forming composition for lithography for an alkali-developable positive resist or an organic-developable negative resist, at least one of R ^4A contains a vinylphenylmethyl group is. On the other hand, when the compound represented by formula (2-1) is used as a film-forming composition for alkali development negative resist lithography, a film-forming composition for underlayer film lithography or an optical component-forming composition, R ^4A is a hydrogen atom.

Further, from the viewpoint of supply of raw materials, the compound represented by the formula (2-1) is preferably a compound represented by the following formula (2a).

（２ａ）

(2a)

In formula (2a) above, X ^A , R ^0A to R ^2A , m ^2a and n ^a have the same meanings as described in formula (2) above.

Further, from the viewpoint of solubility in organic solvents, the compound represented by the formula (2-1) is more preferably a compound represented by the following formula (2b).

（２ｂ）

(2b)

In formula (2b), X ^A , R ^0A , R ^1A , R ^3A , R ^4A , m ^6a and n ^a are the same as defined in formula (2-1) above.

From the viewpoint of solubility in organic solvents, the compound represented by formula (2-1) is more preferably a compound represented by formula (2c) below.

（２ｃ）

(2c)

In formula (2c), X ^A , R ^0A , R ^1A , R ^3A , R ^4A , m ^6a and n ^a are the same as defined in formula (2-1) above.

From the viewpoint of solubility in further organic solvents, the compound represented by the formula (2) has the following formulas (bisn-1) to (bisn-4), (xbisn-1) to (xbisn-3), ( Compounds represented by bin-1) to (bin-4) or (xbin-1) to (xbin-3) are particularly preferred. ( ^R4A in specific examples has the same meaning as above).

（ｂｉｓｎ－１）

(bisn-1)

（ｂｉｓｎ－２）

(bisn-2)

（ｂｉｓｎ－３）

(bisn-3)

（ｂｉｓｎ－４）

(bisn-4)

（ｘｂｉｓｎ－１）

(xbisn-1)

（ｘｂｉｓｎ－２）

(xbisn-2)

（ｘｂｉｓｎ－３）

(xbisn-3)

（ｂｉｎ－１）

(bin-1)

（ｂｉｎ－２）

(bin-2)

（ｂｉｎ－３）

(bin-3)

（ｂｉｎ－４）

(bin-4)

（ｘｂｉｎ－１）

(xbin-1)

（ｘｂｉｎ－２）

(xbin-2)

（ｘｂｉｎ－３）

(xbin-3)

[Method for producing compound represented by formula (2)]
The compound represented by formula (2) used in this embodiment can be appropriately synthesized by applying a known technique, and the synthesis technique is not particularly limited.
For example, under normal pressure, phenols, naphthols and corresponding ketones or aldehydes are polycondensed under an acid catalyst to obtain a polyphenol compound, followed by at least one phenolic hydroxyl group of the polyphenol compound. can be obtained by introducing a vinyl-containing phenylmethyl group into.
Moreover, the said synthesis can also be performed under pressure as needed.

The naphthols are not particularly limited, and include, for example, naphthol, methylnaphthol, methoxynaphthol, naphthalenediol, etc. Use of naphthalenediol is more preferable because the xanthene structure can be easily formed.

The phenols are not particularly limited, and examples thereof include phenol, methylphenol, methoxybenzene, catechol, resorcinol, hydroquinone, and trimethylhydroquinone.

Examples of the aldehydes include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, Naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde, furfural and the like can be mentioned, but are not particularly limited to these. These can be used individually by 1 type or in combination of 2 or more types. Among these, benzaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, cyclohexylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrene It is preferable to use carbaldehyde and furfural in terms of providing high heat resistance, and benzaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, cyclohexylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde. , phenanthrenecarbaldehyde, pyrenecarbaldehyde, and furfural are more preferable because of their high etching resistance.

Examples of the ketones include acetone, methyl ethyl ketone, cyclobutanone, cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone, adamantanone, fluorenone, benzofluorenone, acenaphthenequinone, acenaphthenone, anthraquinone, acetophenone, and diacetylbenzene. , triacetylbenzene, acetonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, benzophenone, diphenylcarbonylbenzene, triphenylcarbonylbenzene, benzonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl and the like. is not particularly limited to These can be used individually by 1 type or in combination of 2 or more types. Among these, cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone, adamantanone, fluorenone, benzofluorenone, acenaphthenequinone, acenaphthenone, anthraquinone, acetophenone, diacetylbenzene, triacetylbenzene, acetonaphthone, diphenylcarbonyl Naphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, benzophenone, diphenylcarbonylbenzene, triphenylcarbonylbenzene, benzonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, and diphenylcarbonylbiphenyl are preferably used from the viewpoint of imparting high heat resistance. diacetylbenzene, triacetylbenzene, acetonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, benzophenone, diphenylcarbonylbenzene, triphenylcarbonylbenzene, benzonaphthone, diphenylcarbonylnaphthalene, phenylcarbonylbiphenyl, diphenylcarbonylbiphenyl, It has high etching resistance and is more preferable.
As ketones, it is preferable to use a ketone having an aromatic ring because it has both high heat resistance and high etching resistance.

The acid catalyst is not particularly limited, and can be appropriately selected from well-known inorganic acids and organic acids. For example, inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, hydrobromic acid, hydrofluoric acid; oxalic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalene Organic acids such as sulfonic acid and naphthalenedisulfonic acid; Lewis acids such as zinc chloride, aluminum chloride, iron chloride and boron trifluoride; mentioned. Hydrochloric acid or sulfuric acid is preferably used from the viewpoint of production such as availability and ease of handling. Moreover, about an acid catalyst, 1 type or 2 or more types can be used.

A reaction solvent may be used when producing the compound represented by the formula (2). The reaction solvent is not particularly limited as long as the reaction between the aldehydes or ketones used and the naphthols and the like proceeds. For example, water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, or a mixed solvent thereof can be used. can be done. The amount of the solvent is not particularly limited, and is, for example, in the range of 0 to 2000 parts by mass with respect to 100 parts by mass of the reaction raw material.
When producing the polyphenol compound, the reaction temperature is not particularly limited and can be appropriately selected according to the reactivity of the reaction raw materials, but is preferably in the range of 10 to 200°C. In order to synthesize the compound represented by the formula (2) of the present embodiment with good selectivity, a lower temperature is more effective, and a range of 10 to 60° C. is more preferable.
The method for producing the compound represented by the above formula (2) is not particularly limited. There is a way to do it. After completion of the polycondensation reaction, in order to remove unreacted raw materials, catalysts, etc. present in the system, the temperature of the reactor can be raised to 130 to 230° C., and volatile matter can be removed at about 1 to 50 mmhg. .

The amount of raw materials for producing the compound represented by the formula (2) is not particularly limited. is used in an amount of 0.001 to 1 mol, and the reaction proceeds at normal pressure at 20 to 60° C. for about 20 minutes to 100 hours.

When producing the compound represented by the formula (2), the desired product is isolated by a known method after the reaction is completed. The method of isolating the target product is not particularly limited, and for example, the reaction solution is concentrated, pure water is added to precipitate the reaction product, cooled to room temperature, filtered and separated, and the resulting solid After filtering and drying, column chromatography is used to separate and purify the by-products, followed by distilling off the solvent, filtering, and drying to obtain the desired compound.

A method for introducing a group substituted with a vinyl-containing phenylmethyl group into at least one phenolic hydroxyl group of a polyphenol compound is known. For example, a group substituted with a vinyl-containing phenylmethyl group can be introduced into at least one phenolic hydroxyl group of a polyphenol compound as follows. A compound for introducing a group substituted with a vinylphenylmethyl group can be synthesized by a known method or easily available, and examples thereof include vinylbenzyl chloride, vinylbenzyl bromide and vinylbenzyl iodide, but are not particularly limited. not.

For example, a polyphenol compound and a compound for introducing a group substituted with a vinylphenylmethyl group are dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), or propylene glycol monomethyl ether acetate. Subsequently, in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide, etc., the mixture is reacted at normal pressure at 20 to 150° C. for 6 to 72 hours. After neutralizing the reaction solution with an acid and adding distilled water to precipitate a white solid, the separated solid is washed with distilled water, or the solvent is evaporated to dryness and, if necessary, washed with distilled water, By drying, a compound in which a hydrogen atom of a hydroxyl group is substituted with a group substituted with a vinyl-containing phenylmethyl group can be obtained.

The timing of introducing the group substituted with the vinyl-containing phenylmethyl group may be not only after the condensation reaction between the binaphthols and the aldehydes or ketones but also before the condensation reaction. Moreover, you may perform after manufacturing resin mentioned later.

A method of introducing a hydroxyalkyl group into at least one phenolic hydroxyl group of a polyphenol compound and introducing a vinylphenylmethyl group into the hydroxyl group is also known.
A hydroxyalkyl group may be introduced into a phenolic hydroxyl group via an oxyalkyl group. For example, hydroxyalkyloxyalkyl groups and hydroxyalkyloxyalkyloxyalkyl groups are introduced. For example, a hydroxyalkyl group can be introduced into at least one phenolic hydroxyl group of the compound as follows, and a group substituted with a vinylphenylmethyl group can be introduced into the hydroxy group.
For example, a hydroxyalkyl group can be introduced into at least one phenolic hydroxyl group of the compound as follows, and a vinylphenylmethyl group can be introduced into the hydroxy group.
A compound for introducing a hydroxyalkyl group can be synthesized by a known method or easily obtained. Examples include chloroethanol, bromoethanol, 2-chloroethyl acetate, 2-bromoethyl acetate, 2-iodoethyl acetate, ethylene oxide. , propylene oxide, butylene oxide, ethylene carbonate, propylene carbonate, and butylene carbonate, but are not particularly limited.

For example, the polyphenol compound and the compound for introducing the hydroxyalkyl group are dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate, or the like. Subsequently, in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide, etc., the mixture is reacted at normal pressure at 20 to 150° C. for 6 to 72 hours. After neutralizing the reaction solution with an acid and adding distilled water to precipitate a white solid, the separated solid is washed with distilled water, or the solvent is evaporated to dryness and, if necessary, washed with distilled water, By drying, a compound in which a hydrogen atom of a hydroxyl group is substituted with a hydroxyalkyl group can be obtained.
For example, when 2-chloroethyl acetate, 2-bromoethyl acetate, or 2-iodoethyl acetate is used, an acetoxyethyl group is introduced, followed by deacylation to introduce a hydroxyethyl group.
Further, for example, when ethylene carbonate, propylene carbonate, or butylene carbonate is used, alkylene carbonate is added to cause a decarboxylation reaction, thereby introducing a hydroxyalkyl group.
Thereafter, the above compound and a compound for introducing a vinylphenylmethyl group are dissolved or suspended in an aprotic solvent such as acetone, tetrahydrofuran (THF), propylene glycol monomethyl ether acetate, or the like. Subsequently, in the presence of a base catalyst such as sodium hydroxide, potassium hydroxide, sodium methoxide, sodium ethoxide, etc., the mixture is reacted at normal pressure at 20 to 150° C. for 6 to 72 hours. After neutralizing the reaction solution with an acid and adding distilled water to precipitate a white solid, the separated solid is washed with distilled water, or the solvent is evaporated to dryness and, if necessary, washed with distilled water, By drying, a compound in which the hydrogen atom of the hydroxy group is substituted with a vinyl-containing phenylmethyl group can be obtained.

In this embodiment, the vinyl-containing phenylmethyl group reacts in the presence of radicals or acids/alkalis to change the solubility in acids, alkalis or organic solvents used in coating solvents and developers. The vinyl-containing phenylmethyl group preferably has the property of causing a chain reaction in the presence of radicals or acids/alkalis in order to enable pattern formation with higher sensitivity and resolution.

[Method for producing a resin obtained by using a compound represented by formula (2) as a monomer]
The compound represented by formula (2) can be used as it is as a film-forming composition for lithography. Moreover, it can also be used as a resin obtained by using the compound represented by the formula (2) as a monomer. For example, it can be used as a resin obtained by reacting the compound represented by the formula (2) with a compound having cross-linking reactivity.
Examples of the resin obtained by using the compound represented by the formula (2) as a monomer include those having a structure represented by the following formula (4). That is, the composition of this embodiment may contain a resin having a structure represented by the following formula (4).

（４）

(4)

In formula (4), L is an optionally substituted alkylene group having 1 to 30 carbon atoms, an arylene group having 6 to 30 carbon atoms which may be substituted, and a substituent an alkoxylylene group having 1 to 30 carbon atoms or a single bond, wherein the alkylene group, the arylene group, and the alkoxylylene group may contain an ether bond, a ketone bond, or an ester bond,
R ^0A , R ^1A , R ^2A , m ^2a , ^na , ^qa and ^XA are the same as in formula (2) above;
When N ^a is an integer of 2 or more, n ^a structural formulas in brackets [ ] may be the same or different.
However, at least one of R ^2A includes a group in which a hydrogen atom of a hydroxyl group is substituted with a vinyl-containing phenylmethyl group.

The resin of this embodiment is obtained by reacting the compound represented by the formula (2) with a compound having cross-linking reactivity.

As the cross-linkable compound, known compounds can be used without particular limitation as long as they can oligomerize or polymerize the compound represented by the formula (2). Specific examples thereof include, but are not limited to, aldehydes, ketones, carboxylic acids, carboxylic acid halides, halogen-containing compounds, amino compounds, imino compounds, isocyanates, unsaturated hydrocarbon group-containing compounds, and the like.

Specific examples of the resin having the structure represented by the formula (2) include, for example, the condensation reaction of the compound represented by the formula (2) with an aldehyde and/or ketone, which is a compound having cross-linking reactivity. Novolak resins can be mentioned.

Examples of aldehydes used in novolac-forming the compound represented by formula (2) include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, Examples include, but are not limited to, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde, furfural and the like. Examples of ketones include the ketones described above. Among these, formaldehyde is more preferred. In addition, these aldehydes and/or ketones can be used individually by 1 type or in combination of 2 or more types. The amount of the aldehyde and/or ketone used is not particularly limited, but is preferably 0.2 to 5 mol, more preferably 0.5 mol, per 1 mol of the compound represented by the formula (2). ~2 moles.

A catalyst can also be used in the condensation reaction between the compound represented by formula (2) and the aldehyde and/or ketone. The acid catalyst used here is not particularly limited and can be appropriately selected from known ones. As such acid catalysts, inorganic acids and organic acids are widely known. , adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid , organic acids such as naphthalenedisulfonic acid, Lewis acids such as zinc chloride, aluminum chloride, iron chloride, and boron trifluoride, or solid acids such as silicotungstic acid, phosphotungstic acid, silicomolybdic acid, and phosphomolybdic acid. Examples include, but are not limited to, these. Among these, organic acids or solid acids are preferred from the viewpoint of production, and hydrochloric acid or sulfuric acid is preferred from the viewpoint of production such as availability and ease of handling. In addition, about an acid catalyst, it can be used individually by 1 type or in combination of 2 or more types. In addition, the amount of the acid catalyst used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. Parts by mass are preferred. However, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, norbornadiene, 5-vinylnorborn-2-ene, α-pinene, β-pinene Aldehydes are not necessarily required in the case of a copolymerization reaction with a compound having a non-conjugated double bond such as limonene.

A reaction solvent can also be used in the condensation reaction between the compound represented by formula (2) and the aldehyde and/or ketone. The reaction solvent in this polycondensation can be appropriately selected and used from among known solvents, and is not particularly limited. Examples thereof include water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, and mixed solvents thereof. exemplified. In addition, a solvent can be used individually by 1 type or in combination of 2 or more types.

In addition, the amount of these solvents used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. is preferably in the range of Furthermore, the reaction temperature can be appropriately selected according to the reactivity of the reaction raw materials, and is not particularly limited, but is usually in the range of 10 to 200°C. In addition, the reaction method can be appropriately selected from known methods and is not particularly limited, but a method of collectively charging the compound represented by the formula (2), an aldehyde and/or ketones, and a catalyst, There is a method of dropping the compound represented by the formula (2), aldehyde and/or ketones in the presence of a catalyst.

After completion of the polycondensation reaction, isolation of the obtained compound can be carried out according to a conventional method, and is not particularly limited. For example, in order to remove unreacted raw materials, catalysts, etc. present in the system, a general method such as raising the temperature of the reactor to 130-230°C and removing volatile matter at about 1-50 mmhg is adopted. As a result, the desired novolak resin can be obtained.

Here, the resin having the structure represented by the formula (4) may be a homopolymer of the compound represented by the formula (2), or may be a copolymer with other phenols. may Examples of copolymerizable phenols include phenol, cresol, dimethylphenol, trimethylphenol, butylphenol, phenylphenol, diphenylphenol, naphthylphenol, resorcinol, methylresorcinol, catechol, butylcatechol, methoxyphenol, methoxyphenol, Examples include, but are not limited to, propylphenol, pyrogallol, thymol, and the like.

Moreover, the resin having the structure represented by the formula (4) may be one obtained by copolymerizing with a polymerizable monomer other than the other phenols described above. Examples of such copolymerizable monomers include naphthol, methylnaphthol, methoxynaphthol, dihydroxynaphthalene, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, and 4-vinylcyclohexene. , norbornadiene, vinylnorbornaene, pinene, limonene and the like, but are not particularly limited thereto. Incidentally, the resin having the structure represented by the formula (2) is a binary or higher (for example, 2 to 4) copolymer of the compound represented by the formula (2) and the phenols described above. Even if it is a two or more (for example, two to quaternary) copolymer of the compound represented by the formula (2) and the copolymerization monomer described above, the compound represented by the formula (2) It may be a ternary or more (for example, ternary to quaternary) copolymer of the compound, the above-described phenols, and the above-described copolymerization monomer.

The molecular weight of the resin having the structure represented by the formula (4) is not particularly limited, but the weight average molecular weight (Mw) in terms of polystyrene is preferably 500 to 30,000, more preferably 750 to 750. 20,000. In addition, from the viewpoint of increasing the cross-linking efficiency and suppressing volatile components during baking, the resin having the structure represented by the formula (4) has a degree of dispersion (weight average molecular weight Mw/number average molecular weight Mn) of 1.2. Those within the range of ~7 are preferred. The Mn can be determined by the method described in the examples below.

It is preferable that the resin having the structure represented by the formula (4) has high solubility in a solvent from the viewpoint of easier application of a wet process. More specifically, when using 1-methoxy-2-propanol (PGME) and/or propylene glycol monomethyl ether acetate (PGMEA) as a solvent, these compounds and/or resins have a solubility of 10% by mass or more in the solvent. is preferred. Here, the solubility in PGME and/or PGMEA is defined as "mass of resin÷(mass of resin+mass of solvent)×100 (mass %)". For example, when 10 g of the resin dissolves in 90 g of PGMEA, the solubility of the resin in PGMEA is "10% by mass or more", and when it does not dissolve, "less than 10% by mass".

[Method for Purifying Compound and/or Resin]
The compound represented by the formula (0) and the resin obtained by using this as a monomer can be purified by the following purification methods. That is, the method for purifying the compound and/or resin of the present embodiment includes the compound represented by the formula (0) and the resin obtained by using this as a monomer (e.g., the compound represented by the formula (1), the compound represented by the formula (1 or more selected from a resin obtained by using the compound represented by (1) as a monomer, a compound represented by the above formula (2), and a resin obtained by using the compound represented by the above formula (2) as a monomer) , a step of dissolving in a solvent to obtain a solution (S), and a step of contacting the obtained solution (S) with an acidic aqueous solution to extract impurities in the compound and / or the resin (first extraction step), and the solvent used in the step of obtaining the solution (S) includes an organic solvent optionally immiscible with water.
In the first extraction step, the resin is, for example, a resin obtained by reacting the compound represented by the formula (1) and/or the compound represented by the formula (2) with a compound having cross-linking reactivity. Preferably. According to the purification method, the content of various metals that may be contained as impurities in the compound or resin having the specific structure described above can be reduced.
More specifically, in the purification method, the compound and/or the resin are dissolved in an organic solvent that is arbitrarily immiscible with water to obtain a solution (S), and the solution (S) is mixed with an acidic aqueous solution. Extraction processing can be performed by contact. As a result, the metal content contained in the solution (S) is transferred to the aqueous phase, and then the organic phase and the aqueous phase are separated to obtain a compound and/or resin with a reduced metal content.

The compounds and resins used in the purification method may be used singly or in combination of two or more. Further, the compounds and resins may contain various surfactants, various cross-linking agents, various acid generators, various stabilizers, and the like.

The solvent arbitrarily immiscible with water used in the purification method is not particularly limited, but an organic solvent that can be safely applied to the semiconductor manufacturing process is preferable. Specifically, the solubility in water at room temperature is 30%. less than 20%, more preferably less than 10% of the organic solvent. The amount of the organic solvent used is preferably 1 to 100 times the mass of the total amount of the compound and resin used.

Specific examples of water-immiscible solvents include, but are not limited to, ethers such as diethyl ether and diisopropyl ether, esters such as ethyl acetate, n-butyl acetate, and isoamyl acetate, methyl ethyl ketone, and methyl isobutyl. Ketones such as ketone, ethyl isobutyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 2-pentanone; ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl glycol ether acetates such as ether acetate; aliphatic hydrocarbons such as n-hexane and n-heptane; aromatic hydrocarbons such as toluene and xylene; and halogenated hydrocarbons such as methylene chloride and chloroform. . Among these, toluene, 2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate, ethyl acetate, etc. are preferred, and methyl isobutyl ketone, ethyl acetate, cyclohexanone, propylene glycol monomethyl ether acetate are more preferred. More preferred are methyl isobutyl ketone and ethyl acetate. Methyl isobutyl ketone, ethyl acetate, etc. have relatively high saturation solubility in the above compounds and resins containing the compounds as constituents, and relatively low boiling points. It becomes possible to reduce the load in the process. Each of these solvents can be used alone, or two or more of them can be used in combination.

The acidic aqueous solution used in the purification method is appropriately selected from aqueous solutions in which generally known organic compounds or inorganic compounds are dissolved in water. Although not limited to the following, for example, a mineral acid aqueous solution obtained by dissolving mineral acids such as hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid in water, or acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, and maleic acid , tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid, trifluoroacetic acid, and the like dissolved in water. Each of these acidic aqueous solutions can be used alone, or two or more of them can be used in combination. Among these acidic aqueous solutions, one or more mineral acid aqueous solutions selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid, or acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, It is preferably an aqueous solution of one or more organic acids selected from the group consisting of tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid and trifluoroacetic acid, sulfuric acid, nitric acid, acetic acid, oxalic acid, More preferred are aqueous solutions of carboxylic acids such as tartaric acid and citric acid, more preferred are aqueous solutions of sulfuric acid, oxalic acid, tartaric acid and citric acid, and even more preferred are aqueous solutions of oxalic acid. Polyvalent carboxylic acids such as oxalic acid, tartaric acid, and citric acid coordinate to metal ions to produce a chelating effect, and therefore tend to remove metals more effectively. Moreover, the water used here is preferably water with a low metal content, such as ion-exchanged water, in line with the purpose of the purification method of the present embodiment.

Although the pH of the acidic aqueous solution used in the purification method is not particularly limited, it is preferable to adjust the acidity of the aqueous solution in consideration of the effects on the compounds and resins. Generally, the pH range is about 0-5, preferably about 0-3.

The amount of the acidic aqueous solution used in the purification method is not particularly limited, but from the viewpoint of reducing the number of times of extraction for metal removal and from the viewpoint of ensuring operability in consideration of the total liquid volume, the amount used is Adjusting is preferred. From the above viewpoint, the amount of the acidic aqueous solution used is preferably 10 to 200% by mass, more preferably 20 to 100% by mass, relative to 100% by mass of the solution (S).

In the purification method, by bringing the acidic aqueous solution and the solution (S) into contact, the metal component can be extracted from the compound or the resin in the solution (S).

In the purification method, the solution (S) preferably further contains an organic solvent optionally miscible with water. When an organic solvent that is arbitrarily miscible with water is included, the amount of the compound and/or resin to be charged can be increased, the liquid separation is improved, and there is a tendency that purification can be performed with high pot efficiency. . The method of adding the organic solvent arbitrarily miscible with water is not particularly limited. For example, any of a method of adding in advance to a solution containing an organic solvent, a method of adding in advance to water or an acidic aqueous solution, and a method of adding after contacting a solution containing an organic solvent with water or an acidic aqueous solution may be used. Among these, the method of adding in advance to a solution containing an organic solvent is preferable in terms of workability of operation and ease of control of the amount to be charged.

The organic solvent arbitrarily miscible with water used in the purification method is not particularly limited, but an organic solvent that can be safely applied to the semiconductor manufacturing process is preferable. The amount of the organic solvent arbitrarily miscible with water is not particularly limited as long as the solution phase and the aqueous phase are separated, but the total amount of the compound and resin used is 0.1 to 100 times by mass. , more preferably 0.1 to 50 times by mass, even more preferably 0.1 to 20 times by mass.

Specific examples of the organic solvent optionally miscible with water used in the purification method include, but are not limited to, ethers such as tetrahydrofuran and 1,3-dioxolane; alcohols such as methanol, ethanol and isopropanol; , N-methylpyrrolidone and other ketones; ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME), propylene glycol monoethyl ether and other glycol ethers. Among these, N-methylpyrrolidone, propylene glycol monomethyl ether and the like are preferred, and N-methylpyrrolidone and propylene glycol monomethyl ether are more preferred. Each of these solvents can be used alone, or two or more of them can be used in combination.

The temperature for the extraction treatment is usually 20 to 90°C, preferably 30 to 80°C. The extraction operation is performed, for example, by mixing well by stirring or the like, and then allowing the mixture to stand still. As a result, the metal content contained in the solution (S) migrates to the aqueous phase. In addition, this operation reduces the acidity of the solution, thereby suppressing deterioration of the compound and/or the resin.

The mixed solution is separated into a solution phase containing a compound and/or resin and a solvent and an aqueous phase by standing, and the solution phase is recovered by decantation or the like. The time for standing is not particularly limited, but it is preferable to adjust the time for standing from the viewpoint of better separation of the solution phase containing the solvent and the aqueous phase. Usually, the standing time is 1 minute or longer, preferably 10 minutes or longer, and more preferably 30 minutes or longer. The extraction process may be performed only once, but it is also effective to repeat the operations of mixing, standing, and separating multiple times.

In the purification method, after the first extraction step, the solution phase containing the compound or the resin is further brought into contact with water to extract impurities in the compound or the resin (second extraction step). is preferred. Specifically, for example, after performing the extraction treatment using an acidic aqueous solution, the solution phase containing the recovered compound and/or resin and solvent extracted from the aqueous solution is further subjected to extraction treatment with water. is preferred. The extraction treatment with water is not particularly limited, but can be performed, for example, by mixing the solution phase and water well by stirring or the like, and then allowing the obtained mixed solution to stand still. The mixed solution after standing is separated into a solution phase containing a compound and/or resin and a solvent and an aqueous phase, so that the solution phase can be recovered by decantation or the like.
Moreover, the water used here is preferably water with a low metal content, such as ion-exchanged water, in line with the purpose of the present embodiment. The extraction process may be performed only once, but it is also effective to repeat the operations of mixing, standing, and separating multiple times. In the extraction process, conditions such as the ratio of both used, temperature, time, etc. are not particularly limited, but may be the same as in the above contact process with the acidic aqueous solution.

Water that may be mixed in the solution containing the compound and/or resin and solvent thus obtained can be easily removed by performing an operation such as distillation under reduced pressure. Moreover, if necessary, a solvent can be added to the solution to adjust the concentration of the compound and/or the resin to an arbitrary concentration.

The method for isolating the compound and/or resin from the resulting solution containing the compound and/or resin and solvent is not particularly limited, and known methods such as removal under reduced pressure, separation by reprecipitation, and combinations thereof. can be done with If necessary, known treatments such as concentration operation, filtration operation, centrifugation operation, and drying operation can be performed.

"Composition"
The composition of the present embodiment contains one or more selected from the group consisting of the compounds and resins of the present embodiment described above. The composition of this embodiment can further contain a solvent, an acid generator, a cross-linking agent, a cross-linking accelerator, a radical polymerization initiator, and the like. The composition of the present embodiment can be used for forming a film for lithography (that is, a film-forming composition for lithography) and for forming optical components.

[Film-forming composition for lithography]
The composition of the present embodiment is one or more selected from the group consisting of the compounds and resins of the present embodiment described above (e.g., the compound represented by the formula (1), the compound represented by the formula (1) a resin obtained as a monomer, a compound represented by the formula (2), and one or more selected from the group consisting of a resin obtained by using the compound represented by the formula (2) as a monomer) as a resist base material. can do.

[Film-forming composition for lithography for chemically amplified resist applications]
The composition of the present embodiment can be used as a film-forming composition for lithography for chemically amplified resist applications (hereinafter also referred to as a resist composition). The resist composition contains, for example, one or more selected from the group consisting of the compounds and resins of the present embodiment.

Moreover, the resist composition preferably contains a solvent. Examples of the solvent include, but are not limited to, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-propyl ether acetate, and ethylene glycol mono-n-butyl ether acetate. ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, propylene glycol mono - propylene glycol monoalkyl ether acetates such as n-butyl ether acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether; methyl lactate, ethyl lactate, n-propyl lactate, lactic acid n -Lactic acid esters such as butyl and n-amyl lactate; Carboxylic acid esters; methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 3-methoxy-2-methylpropionate, 3-methoxybutyl acetate, Other esters such as 3-methyl-3-methoxybutyl acetate, butyl 3-methoxy-3-methylpropionate, butyl 3-methoxy-3-methylbutyrate, methyl acetoacetate, methyl pyruvate, ethyl pyruvate; toluene , xylene and other aromatic hydrocarbons; 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone (CPN), cyclohexanone (CHN) and other ketones; N,N-dimethylformamide, N-methylacetamide, Examples include amides such as N,N-dimethylacetamide and N-methylpyrrolidone; lactones such as γ-lactone, but are not particularly limited. These solvents can be used alone or in combination of two or more.

The solvent used in this embodiment is preferably a safe solvent, more preferably at least one selected from PGMEA, PGME, CHN, CPN, 2-heptanone, anisole, butyl acetate, ethyl propionate and ethyl lactate. and more preferably at least one selected from PGMEA, PGME and CHN.

In the present embodiment, the amount of the solid component and the amount of the solvent are not particularly limited. % by mass, more preferably 1 to 50% by mass solid component and 50 to 99% by mass solvent, more preferably 2 to 40% by mass solid component and 60 to 98% by mass solvent, particularly preferably solid 2-10% by weight of components and 90-98% by weight of solvent.

The resist composition contains, as another solid component, at least one selected from the group consisting of an acid generator (C), an acid cross-linking agent (G), an acid diffusion controller (E) and other components (F). You may In addition, in this specification, a solid component means components other than a solvent.

Here, the acid generator (C), the acid cross-linking agent (G), the acid diffusion controller (E), and the other component (F) can be known ones, and are not particularly limited. Those described in 2013/024778 are preferred.

[Ratio of each component]
In the resist composition, the content of the above-described compound and resin used as a resist base material is not particularly limited, but the total mass of solid components (resist base material, acid generator (C), acid cross-linking agent (G), the acid diffusion control agent (E), and other components (F), which are optionally used, the same applies hereinafter)). , more preferably 55 to 90% by mass, still more preferably 60 to 80% by mass, and particularly preferably 60 to 70% by mass. With said content, the resolution is further improved and the line edge roughness (LER) is further reduced.
In addition, when containing both a compound and resin as a resist base material, the said content is the total amount of both components.

[Other components (F)]
Components other than the resist base material, the acid generator (C), the acid cross-linking agent (G) and the acid diffusion control agent (E) may optionally be added to the resist composition within a range that does not hinder the object of the present invention. as dissolution accelerators, dissolution control agents, sensitizers, surfactants, organic carboxylic acids or phosphorus oxo acids or derivatives thereof, heat and/or photocuring catalysts, polymerization inhibitors, flame retardants, fillers, coupling Additives such as agents, thermosetting resins, photosetting resins, dyes, pigments, thickeners, lubricants, antifoaming agents, leveling agents, UV absorbers, surfactants, coloring agents, nonionic surfactants, etc. can be added in one or more. In addition, in this specification, another component (F) may be called an arbitrary component (F).

The resist composition contains a resist base material (hereinafter also referred to as component (A)), an acid generator (C), an acid cross-linking agent (G), an acid diffusion controller (E), and an optional component (F). The amount (component (A)/acid generator (C)/acid cross-linking agent (G)/acid diffusion controller (E)/optional component (F)) is mass % based on solids,
preferably 50 to 99.4/0.001 to 49/0.5 to 49/0.001 to 49/0 to 49,
More preferably 55 to 90/1 to 40/0.5 to 40/0.01 to 10/0 to 5,
More preferably 60 to 80/3 to 30/1 to 30/0.01 to 5/0 to 1,
Especially preferred is 60-70/10-25/2-20/0.01-3/0.
The blending ratio of each component is selected from each range so that the sum total is 100% by mass. When the above formulation is used, performance such as sensitivity, resolution, and developability is excellent.

The resist composition is usually prepared by dissolving each component in a solvent to obtain a uniform solution at the time of use, and then, if necessary, filtering through a filter having a pore size of about 0.2 μm.

The resist composition may contain resins other than the compounds and resins of the present embodiment within a range that does not impede the object of the present invention. The resin is not particularly limited. Combinations, derivatives thereof, and the like are included. The content of the resin is not particularly limited and is appropriately adjusted according to the type of component (A) used, but is preferably 30 parts by mass or less, more preferably 30 parts by mass or less per 100 parts by mass of component (A). It is 10 parts by mass or less, more preferably 5 parts by mass or less, and particularly preferably 0 parts by mass.

[Physical properties of resist composition]
The resist composition can form an amorphous film by spin coating. Moreover, it can be applied to a general semiconductor manufacturing process. Either a positive resist pattern or a negative resist pattern can be produced depending on the types of the compound and resin of the present embodiment and/or the type of developer used.

In the case of a positive resist pattern, the dissolution rate of the amorphous film formed by spin coating the resist composition in a developer at 23° C. is preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec, and 0 0.0005 to 5 Å/sec is more preferred. When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. This is presumed to be due to the change in the solubility of the compound and resin of the present embodiment before and after the exposure, which increases the contrast at the interface between the exposed portion that dissolves in the developer and the unexposed portion that does not dissolve in the developer. be done. It also has the effect of reducing LER and reducing defects.
In the case of a negative resist pattern, the dissolution rate of an amorphous film formed by spin-coating the resist composition in a developer at 23° C. is preferably 10 Å/sec or more. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10 Å/sec or more, the resolution may be improved. It is presumed that this is because the microscopic surface sites of the compound and resin of the present embodiment are dissolved and the LER is reduced. In addition, there is an effect of reducing defects.
The dissolution rate can be determined by immersing an amorphous film in a developer at 23° C. for a predetermined time, and measuring the film thickness before and after the immersion visually, by an ellipsometer, QCM method, or other known method.

In the case of a positive resist pattern, the dissolution rate in a developer at 23° C. of a portion of an amorphous film formed by spin-coating the resist composition that has been exposed to radiation such as a krf excimer laser, extreme ultraviolet rays, electron beams, or X-rays is , 10 Å/sec or more. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10 Å/sec or more, the resolution may be improved. It is presumed that this is because the microscopic surface sites of the compound and resin of the present embodiment are dissolved and the LER is reduced. In addition, there is an effect of reducing defects.
In the case of a negative resist pattern, the dissolution rate in a developer at 23° C. of a portion of an amorphous film formed by spin-coating the resist composition that has been exposed to radiation such as a krf excimer laser, extreme ultraviolet rays, electron beams, or X-rays is , preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec, even more preferably 0.0005 to 5 Å/sec. When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. This is due to the change in the solubility of the resin containing the compound and resin of the present embodiment as constituent components before and after exposure, and the contrast at the interface between the unexposed area that dissolves in the developer and the exposed area that does not dissolve in the developer. is assumed to be larger. It also has the effect of reducing LER and reducing defects.

[Film-forming composition for lithography for non-chemically amplified resist applications]
The composition of the present embodiment can be used as a film-forming composition for lithography for non-chemically amplified resist applications (hereinafter also referred to as a radiation-sensitive composition). The component (A) (the compound and resin of the present embodiment described above) to be contained in the radiation-sensitive composition is used in combination with the diazonaphthoquinone photoactive compound (B) described later, and is g-line, h-line, i-line, krf It is useful as a base material for a positive resist that becomes a readily soluble compound in a developer when irradiated with an excimer laser, an arf excimer laser, extreme ultraviolet rays, electron beams or X-rays. G-line, h-line, i-line, krf excimer laser, arf excimer laser, extreme ultraviolet rays, electron beams, or X-rays do not significantly change the properties of component (A), but diazonaphthoquinone, which is sparingly soluble in a developer, is photoactive. By changing the compound (B) into a readily soluble compound, a resist pattern can be formed by a development step.
Since the component (A) contained in the radiation-sensitive composition is a compound with a relatively low molecular weight, the roughness of the obtained resist pattern is very small. In formula (1), at least one selected from the group consisting of R ⁰ to R ⁵ is preferably a group containing an iodine atom, and in formula (2), R ^0A , R ^1A and R ^2A At least one selected from the group consisting of is preferably an iodine atom-containing group. When the component (A) having a group containing an iodine atom, which is such a preferred embodiment, is applied to the resist composition, the ability to absorb radiation such as electron beams, extreme ultraviolet rays (EUV), and X-rays is increased. , and as a result, it is possible to increase the sensitivity, which is preferable.

The glass transition temperature of component (A) (resist base) to be contained in the radiation-sensitive composition is preferably 100° C. or higher, more preferably 120° C. or higher, still more preferably 140° C. or higher, and particularly preferably 150° C. or higher. is. Although the upper limit of the glass transition temperature of component (A) is not particularly limited, it is, for example, 400°C. When the glass transition temperature of the component (A) is within the above range, it has heat resistance capable of maintaining the pattern shape in the semiconductor lithography process, and performance such as high resolution is improved.

It is preferable that the component (A) contained in the radiation-sensitive composition has a crystallization heat value of less than 20 J/g as determined by differential scanning calorimetric analysis of the glass transition temperature. In addition, (crystallization temperature) - (glass transition temperature) is preferably 70°C or higher, more preferably 80°C or higher, still more preferably 100°C or higher, and particularly preferably 130°C or higher. When the heat of crystallization is less than 20 J/g, or (crystallization temperature) - (glass transition temperature) is within the above range, an amorphous film can be easily formed by spin-coating the radiation-sensitive composition, and The film formability required for the resist can be maintained for a long period of time, and the resolution can be improved.

In the present embodiment, the crystallization heat value, crystallization temperature and glass transition temperature can be determined by differential scanning calorimetry using DSC/TA-50WS manufactured by Shimadzu Corporation. About 10 mg of a sample is placed in an unsealed aluminum container and heated to a melting point or higher at a heating rate of 20° C./min in a nitrogen gas stream (50 ml/min). After quenching, the temperature is again raised to above the melting point at a heating rate of 20° C./min in a stream of nitrogen gas (30 ml/min). After further rapid cooling, the temperature is again raised to 400° C. in a nitrogen gas stream (30 ml/min) at a temperature elevation rate of 20° C./min. The glass transition temperature (Tg) is defined as the temperature at the midpoint of the stepped change in the baseline (where the specific heat is halved), and the temperature of the exothermic peak that appears after that is defined as the crystallization temperature. The calorific value is obtained from the area of the region surrounded by the exothermic peak and the baseline, and is defined as the crystallization calorific value.

The component (A) to be contained in the radiation-sensitive composition is sublimed under normal pressure at 100° C. or less, preferably 120° C. or less, more preferably 130° C. or less, still more preferably 140° C. or less, and particularly preferably 150° C. or less. preferably low. Low sublimability means that the weight loss when held at a predetermined temperature for 10 minutes in thermogravimetric analysis is 10% or less, preferably 5% or less, more preferably 3% or less, further preferably 1% or less, and particularly preferably indicates that it is 0.1% or less. Due to the low sublimability, it is possible to prevent contamination of the exposure apparatus due to outgassing during exposure. Also, a good pattern shape with low roughness can be obtained.

Component (A) to be contained in the radiation-sensitive composition includes propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone (CHN), cyclopentanone (CPN), 2-heptanone, anisole, In a solvent selected from butyl acetate, ethyl propionate and ethyl lactate and exhibiting the highest dissolving power for component (A) at 23°C, preferably 1% by mass or more, more preferably 5% by mass or more, more preferably 10% by mass or more, particularly preferably selected from PGMEA, PGME, and CHN, and (A) a solvent exhibiting the highest dissolving ability for the resist substrate, at 23° C., 20% by mass or more, Particularly preferably, it dissolves in PGMEA at 23° C. in an amount of 20% by mass or more. Satisfying the above conditions enables use in semiconductor manufacturing processes in actual production.

[Diazonaphthoquinone photoactive compound (B)]
The diazonaphthoquinone photoactive compound (B) to be contained in the radiation-sensitive composition is a diazonaphthoquinone material, including polymeric and non-polymeric diazonaphthoquinone photoactive compounds, and is generally used as a photosensitive component in positive resist compositions. There is no particular limitation as long as it is used as a (photosensitizer), and one or more of them can be arbitrarily selected and used.

Examples of such photosensitizers include those obtained by reacting naphthoquinonediazide sulfonyl chloride, benzoquinonediazide sulfonyl chloride, or the like with a low-molecular-weight compound or high-molecular-weight compound having a functional group capable of condensation reaction with these acid chlorides. Compounds are preferred. Here, the functional group capable of condensing with the acid chloride is not particularly limited, and examples thereof include a hydroxyl group and an amino group, with a hydroxyl group being particularly preferred. The compound that can be condensed with an acid chloride containing a hydroxyl group is not particularly limited, but examples include hydroquinone, resorcinol, 2,4-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,2',3,4,6'- Hydroxybenzophenones such as pentahydroxybenzophenone, hydroxyphenylalkanes such as bis(2,4-dihydroxyphenyl)methane, bis(2,3,4-trihydroxyphenyl)methane and bis(2,4-dihydroxyphenyl)propane , 4,4′,3″,4″-tetrahydroxy-3,5,3′,5′-tetramethyltriphenylmethane, 4,4′,2″,3″,4″-pentahydroxy-3, Hydroxytriphenylmethanes such as 5,3′,5′-tetramethyltriphenylmethane and the like can be mentioned.
Further, as acid chlorides such as naphthoquinonediazide sulfonyl chloride and benzoquinonediazide sulfonyl chloride, for example, 1,2-naphthoquinonediazide-5-sulfonyl chloride and 1,2-naphthoquinonediazide-4-sulfonyl chloride are preferred. mentioned.

The radiation-sensitive composition may be prepared, for example, by dissolving each component in a solvent at the time of use to form a uniform solution, and then, if necessary, filtering through a filter having a pore size of about 0.2 μm. is preferred.

[Characteristics of Radiation-Sensitive Composition]
The radiation-sensitive composition can form an amorphous film by spin coating. Moreover, it can be applied to a general semiconductor manufacturing process. Either a positive resist pattern or a negative resist pattern can be produced depending on the type of developer used.
In the case of a positive resist pattern, the dissolution rate of the amorphous film formed by spin-coating the radiation-sensitive composition in a developer at 23° C. is preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec. , 0.0005 to 5 Å/sec. When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. This is due to the change in the solubility of the resin containing the compound and resin of the present embodiment as constituent components before and after exposure, and the contrast at the interface between the exposed area that dissolves in the developer and the unexposed area that does not dissolve in the developer. is assumed to be larger. It also has the effect of reducing LER and reducing defects.
In the case of a negative resist pattern, the dissolution rate of the amorphous film formed by spin-coating the radiation-sensitive composition in a developer at 23° C. is preferably 10 Å/sec or more. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10 Å/sec or more, the resolution may be improved. It is presumed that this is because the microscopic surface sites of the resin containing the compound and resin of the present embodiment described above as constituent components are dissolved and the LER is reduced. In addition, there is an effect of reducing defects.
The dissolution rate can be determined by immersing an amorphous film in a developer at 23° C. for a predetermined time, and measuring the film thickness before and after the immersion visually, by an ellipsometer, QCM method, or other known method.

In the case of a positive resist pattern, an amorphous film formed by spin-coating the radiation-sensitive composition is irradiated with radiation such as krf excimer laser, extreme ultraviolet rays, electron beams or X-rays, or at 20 to 500 ° C. The dissolution rate of the exposed portion after heating in the developer at 23° C. is preferably 10 Å/sec or more, more preferably 10 to 10000 Å/sec, and even more preferably 100 to 1000 Å/sec. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10000 Å/sec or less, the resolution may be improved. It is presumed that this is because the microscopic surface sites of the resin containing the compound and resin of the present embodiment described above as constituent components are dissolved and the LER is reduced. In addition, there is an effect of reducing defects.
In the case of a negative resist pattern, the amorphous film formed by spin-coating the radiation-sensitive composition is irradiated with radiation such as a krf excimer laser, extreme ultraviolet rays, electron beams or X-rays, or at 20 to 500 ° C. The dissolution rate of the exposed portion after heating in the developer at 23° C. is preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec, and even more preferably 0.0005 to 5 Å/sec. When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. This is presumed to be due to the change in the solubility of the compound and resin of the present embodiment before and after exposure, which increases the contrast at the interface between the unexposed area that dissolves in the developer and the exposed area that does not dissolve in the developer. be done. It also has the effect of reducing LER and reducing defects.

[Ratio of each component]
In the radiation-sensitive composition, the content of component (A) is the total weight of solid components (component (A), diazonaphthoquinone photoactive compound (B), other component (D), and other optionally used solid components). is preferably 1 to 99% by mass, more preferably 5 to 95% by mass, still more preferably 10 to 90% by mass, and particularly preferably 25 to 75% by mass, based on the sum of the components, the same applies hereinafter). . When the content of the component (A) is within the above range, the radiation-sensitive composition can provide a pattern with high sensitivity and low roughness.

In the radiation-sensitive composition, the content of the diazonaphthoquinone photoactive compound (B) is the total weight of solid components (component (A), diazonaphthoquinone photoactive compound (B) and other components (D), etc.). is preferably 1 to 99% by mass, more preferably 5 to 95% by mass, still more preferably 10 to 90% by mass, and particularly preferably 25 to 75% by mass, based on the total solid components used, the same applies hereinafter). % by mass. When the content of the diazonaphthoquinone photoactive compound (B) is within the above range, the radiation-sensitive composition of the present embodiment can obtain a pattern with high sensitivity and low roughness.

[Other components (D)]
The radiation-sensitive composition may optionally contain, as components other than the component (A) and the diazonaphthoquinone photoactive compound (B), an acid generator, an acid cross-linking agent, and a Acid diffusion controller, dissolution accelerator, dissolution controller, sensitizer, surfactant, organic carboxylic acid or phosphorus oxoacid or derivative thereof, heat and/or photocuring catalyst, polymerization inhibitor, flame retardant, filler , coupling agents, thermosetting resins, photosetting resins, dyes, pigments, thickeners, lubricants, antifoaming agents, leveling agents, UV absorbers, surfactants, coloring agents, nonionic surfactants, etc. One or more of various additives can be added. In addition, in this specification, another component (D) may be called an arbitrary component (D).

In the radiation-sensitive composition, the blending ratio of each component (component (A)/diazonaphthoquinone photoactive compound (B)/optional component (D)) is mass % based on solid components,
preferably 1 to 99/99 to 1/0 to 98,
more preferably 5 to 95/95 to 5/0 to 49,
More preferably 10 to 90/90 to 10/0 to 10,
Especially preferably 20 to 80/80 to 20/0 to 5,
Most preferably 25-75/75-25/0.
The blending ratio of each component is selected from each range so that the sum total is 100% by mass. When the blending ratio of each component is within the above range, the radiation-sensitive composition is excellent in properties such as sensitivity, resolution, etc., in addition to roughness.

The radiation-sensitive composition may contain compounds and resins other than those of the present embodiment as long as the object of the present invention is not impaired. Examples of such resins include novolac resins, polyvinylphenols, polyacrylic acid, polyvinyl alcohol, styrene-maleic anhydride resins, and polymers containing acrylic acid, vinyl alcohol, or vinylphenol as monomer units, or these. derivatives and the like. The blending amount of these resins is appropriately adjusted according to the type of component (A) used, but is preferably 30 parts by mass or less, more preferably 10 parts by mass or less per 100 parts by mass of component (A). , more preferably 5 parts by mass or less, and particularly preferably 0 parts by mass.

[Method of forming a resist pattern]
The method for forming a resist pattern according to the present embodiment comprises forming a photoresist layer using the composition of the present embodiment (the resist composition or the radiation-sensitive composition) described above, and then forming a predetermined region of the photoresist layer. including the step of irradiating radiation and developing. Specifically, the method of forming a resist pattern according to the present embodiment includes steps of forming a resist film on a substrate, exposing the formed resist film, and developing the resist film to form a resist pattern. and a step. The resist pattern in this embodiment can also be formed as an upper layer resist in a multilayer process.

The method for forming the resist pattern is not particularly limited, but includes, for example, the following methods. First, a resist film is formed by applying the resist composition or the radiation-sensitive composition onto a conventionally known substrate by a coating means such as spin coating, casting coating, roll coating, or the like. The conventionally known substrate is not particularly limited, and may be, for example, a substrate for electronic components or a substrate having a predetermined wiring pattern formed thereon. More specifically, silicon wafers, metal substrates such as copper, chromium, iron, and aluminum substrates, glass substrates, and the like can be used. Materials for the wiring pattern include, for example, copper, aluminum, nickel, and gold. In addition, if necessary, an inorganic and/or organic film may be provided on the substrate. Inorganic films include inorganic antireflection coatings (inorganic BARC). Organic films include organic antireflection coatings (organic BARC). Surface treatment with hexamethylenedisilazane or the like may be performed.

Next, if necessary, the coated substrate is heated. The heating conditions are preferably 20 to 250.degree. C., more preferably 20 to 150.degree. Heating is preferable because the adhesion of the resist to the substrate may be improved. Next, the resist film is exposed to a desired pattern with radiation selected from the group consisting of visible light, ultraviolet rays, excimer lasers, electron beams, extreme ultraviolet (EUV), X-rays, and ion beams. Exposure conditions and the like are appropriately selected according to the composition of the resist composition or the radiation-sensitive composition. In this embodiment, in order to stably form a fine pattern with high precision in exposure, it is preferable to heat after radiation irradiation. The heating conditions are preferably 20 to 250.degree. C., more preferably 20 to 150.degree.

Next, a predetermined resist pattern is formed by developing the exposed resist film with a developer. As the developer, it is preferable to select a solvent having a solubility parameter (SP value) close to that of the compound and resin of the present embodiment to be used. A solvent, a polar solvent such as an ether solvent, a hydrocarbon solvent, or an alkaline aqueous solution can be used.

Examples of ketone solvents include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, and methyl ethyl ketone. , methyl isobutyl ketone, acetylacetone, acetonyl acetone, ionone, diacetonyl alcohol, acetylcarbinol, acetophenone, methylnaphthyl ketone, isophorone, propylene carbonate and the like.

Examples of ester solvents include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3 -ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate and the like.

Examples of alcohol solvents include methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol (2-propanol), n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, Alcohols such as 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol and n-decanol, glycol solvents such as ethylene glycol, diethylene glycol and triethylene glycol, ethylene glycol monomethyl ether and propylene glycol monomethyl Glycol ether solvents such as ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, and methoxymethylbutanol can be used.

Examples of ether-based solvents include dioxane, tetrahydrofuran, and the like, in addition to the above-mentioned glycol ether-based solvents.

Examples of amide solvents include N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, hexamethylphosphoric triamide, 1,3-dimethyl-2-imidazolidinone, and the like. Available.

Examples of hydrocarbon solvents include aromatic hydrocarbon solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as pentane, hexane, octane and decane.

A plurality of the above solvents may be mixed, or a solvent other than the above or water may be mixed and used within the range of performance. However, in order to fully exhibit the effects of the present invention, the water content of the developer as a whole is less than 70% by mass, preferably less than 50% by mass, more preferably less than 30% by mass. Preferably, it is more preferably less than 10% by mass, and particularly preferably contains substantially no water. That is, the content of the organic solvent in the developer is 30% by mass or more and 100% by mass or less, preferably 50% by mass or more and 100% by mass or less, and 70% by mass or more and 100% by mass or less. It is more preferably 90% by mass or more and 100% by mass or less, and particularly preferably 95% by mass or more and 100% by mass or less.

Examples of alkaline aqueous solutions include mono-, di- or trialkylamines, mono-, di- or trialkanolamines, heterocyclic amines, tetramethylammonium hydroxide (TMAH), alkaline compounds such as choline. mentioned.

In particular, the developer contains at least one solvent selected from ketone-based solvents, ester-based solvents, alcohol-based solvents, amide-based solvents and ether-based solvents. is preferable because it improves the resist performance of

The vapor pressure of the developer at 20° C. is preferably 5 kpa or less, more preferably 3 kpa or less, and particularly preferably 2 kpa or less. By setting the vapor pressure of the developer to 5 kpa or less, evaporation of the developer on the substrate or in the developing cup is suppressed, temperature uniformity within the wafer plane is improved, and as a result, dimensional uniformity within the wafer plane is improved. improve.

Specific examples having a vapor pressure of 5 kpa or less include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl Ketone solvents such as isobutyl ketone, butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxy Ester solvents such as butyl acetate, 3-methyl-3-methoxybutyl acetate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol , tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol, n-decanol and other alcohol solvents, ethylene glycol, diethylene glycol, triethylene glycol and glycol ether solvents such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, methoxymethylbutanol, etc. Ether solvents such as tetrahydrofuran, amide solvents such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide, and N,N-dimethylformamide, aromatic hydrocarbon solvents such as toluene and xylene, octane, decane, etc. Aliphatic hydrocarbon-based solvents are mentioned.

Specific examples having a vapor pressure of 2 kpa or less, which is a particularly preferred range, include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, and methylcyclohexanone. , Ketone solvents such as phenylacetone, butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3- Ester solvents such as methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl lactate, butyl lactate, propyl lactate, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol , 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol, n-decanol and other alcohol solvents, ethylene glycol, diethylene glycol, triethylene glycol and other glycol solvents, ethylene glycol monomethyl ether, propylene Glycol ether solvents such as glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, methoxymethylbutanol, N-methyl-2-pyrrolidone, N,N-dimethyl Examples include amide solvents such as acetamide and N,N-dimethylformamide, aromatic hydrocarbon solvents such as xylene, and aliphatic hydrocarbon solvents such as octane and decane.

An appropriate amount of surfactant can be added to the developer if necessary.
Although the surfactant is not particularly limited, for example, ionic or nonionic fluorine-based and/or silicon-based surfactants can be used. Examples of these fluorine and/or silicon surfactants include JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, and JP-A-62-170950. , JP-A-63-34540, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988, US Pat. No. 5,405,720, 5360692, 5529881, 5296330, 5436098, 5576143, 5294511, and 5824451. It can, preferably, be a non-ionic surfactant. Although the nonionic surfactant is not particularly limited, it is more preferable to use a fluorine-based surfactant or a silicon-based surfactant.

The amount of surfactant used is generally 0.001 to 5% by mass, preferably 0.005 to 2% by mass, more preferably 0.01 to 0.5% by mass, relative to the total amount of the developer.

Examples of the development method include a method of immersing the substrate in a bath filled with a developer for a certain period of time (dip method), and a method of developing by standing still for a certain period of time while the developer is heaped up on the surface of the substrate by surface tension (puddle method). method), a method in which the developer is sprayed onto the surface of the substrate (spray method), and a method in which the developer is continuously applied while scanning the developer dispensing nozzle at a constant speed on the substrate rotating at a constant speed (dynamic dispensing method). ) can be applied. The time for pattern development is not particularly limited, but is preferably 10 to 90 seconds.

Further, after the step of developing, a step of stopping development may be performed while replacing the solvent with another solvent.

After development, it is preferable to include a step of washing with a rinse containing an organic solvent.

The rinsing liquid used in the rinsing step after development is not particularly limited as long as it does not dissolve the resist pattern cured by crosslinking, and a common solution containing an organic solvent or water can be used. As the rinse liquid, it is preferable to use a rinse liquid containing at least one organic solvent selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents. . More preferably, after development, a step of washing with a rinsing solution containing at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, and amide solvents is performed. Even more preferably, a step of washing with a rinse solution containing an alcohol-based solvent or an ester-based solvent is performed after development. Even more preferably, after development, a step of washing with a rinsing solution containing a monohydric alcohol is performed. Particularly preferably, after development, a step of washing with a rinsing solution containing a monohydric alcohol having 5 or more carbon atoms is performed. The time for pattern rinsing is not particularly limited, but is preferably 10 to 90 seconds.

Here, the monohydric alcohol used in the rinse step after development includes linear, branched and cyclic monohydric alcohols, specifically 1-butanol, 2-butanol, 3-methyl- 1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol, 1-heptanol, 1-octanol, 2-hexanol, cyclopentanol, 2- Heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol, 4-octanol and the like can be used, and particularly preferred monohydric alcohols having 5 or more carbon atoms include 1-hexanol, 2-hexanol, 4 -methyl-2-pentanol, 1-pentanol, 3-methyl-1-butanol and the like can be used.

A plurality of the above components may be mixed, or may be used by mixing with an organic solvent other than the above.

The water content in the rinse liquid is preferably 10% by mass or less, more preferably 5% by mass or less, and particularly preferably 3% by mass or less. By setting the water content to 10% by mass or less, better developing properties can be obtained.

The vapor pressure of the rinse used after development is preferably 0.05 kpa or more and 5 kpa or less, more preferably 0.1 kpa or more and 5 kpa or less, and most preferably 0.12 kpa or more and 3 kpa or less at 20°C. By setting the vapor pressure of the rinsing liquid to 0.05 kpa or more and 5 kpa or less, the temperature uniformity in the wafer surface is further improved, swelling caused by the permeation of the rinsing liquid is further suppressed, and the in-plane dimension of the wafer is reduced. Better uniformity.

An appropriate amount of surfactant may be added to the rinse solution before use.

In the rinsing step, the developed wafer is washed with the rinsing liquid containing the organic solvent. The method of the cleaning treatment is not particularly limited, but for example, a method of continuously applying the rinse solution onto the substrate rotating at a constant speed (rotation coating method), or a method of immersing the substrate in a bath filled with the rinse solution for a certain period of time. A method (dip method), a method of spraying a rinse solution onto the substrate surface (spray method), etc. can be applied. It is preferable to rotate to remove the rinse liquid from the substrate.

A patterned wiring board is obtained by etching after forming a resist pattern. Etching can be carried out by known methods such as dry etching using plasma gas and wet etching with alkaline solution, cupric chloride solution, ferric chloride solution or the like.

Plating can also be performed after forming the resist pattern. Examples of the plating method include copper plating, solder plating, nickel plating, and gold plating.

Residual resist patterns after etching can be removed with an organic solvent. Examples of the organic solvent include PGMEA (propylene glycol monomethyl ether acetate), PGME (propylene glycol monomethyl ether), EL (ethyl lactate) and the like. Examples of the peeling method include an immersion method and a spray method. Also, the wiring board on which the resist pattern is formed may be a multilayer wiring board and may have a small-diameter through hole.

The wiring board obtained in the present embodiment can also be formed by a method of forming a resist pattern, vapor-depositing a metal in a vacuum, and then dissolving the resist pattern with a solution, that is, a lift-off method.

[Film-forming composition for lithography for underlayer film applications]
The composition of the present embodiment can also be used as a film-forming composition for lithography for underlayer film applications (hereinafter also referred to as underlayer film-forming material). The underlayer film-forming material contains at least one substance selected from the group consisting of the compounds and resins of the present embodiment described above. In the present embodiment, the substance is preferably 1 to 100% by mass, more preferably 10 to 100% by mass, more preferably 50 to 100% by mass, in the underlayer film-forming material from the viewpoint of coatability and quality stability. %, and particularly preferably 100% by mass.

The underlayer film-forming material can be applied to a wet process and has excellent heat resistance and etching resistance. Furthermore, since the above-described substance is used as the underlayer film forming material, deterioration of the film during high-temperature baking is suppressed, and an underlayer film having excellent etching resistance to oxygen plasma etching or the like can be formed. Furthermore, since the underlayer film-forming material has excellent adhesion to the resist layer, an excellent resist pattern can be obtained. The underlayer film-forming material may contain a known underlayer film-forming material for lithography, etc., as long as the effects of the present invention are not impaired.

[solvent]
The underlayer film-forming material may contain a solvent. As the solvent used for the underlayer film-forming material, any known solvent can be appropriately used as long as it dissolves at least the above-mentioned substances.

Specific examples of the solvent include, but are not limited to, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; cellosolve solvents such as propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate; ethyl lactate and methyl acetate. , Ester solvents such as ethyl acetate, butyl acetate, isoamyl acetate, ethyl lactate, methyl methoxypropionate, methyl hydroxyisobutyrate; alcohol solvents such as methanol, ethanol, isopropanol, 1-ethoxy-2-propanol; toluene, xylene , aromatic hydrocarbons such as anisole. These solvents can be used singly or in combination of two or more.

Among the above solvents, cyclohexanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, methyl hydroxyisobutyrate, and anisole are particularly preferred from the viewpoint of safety.

Although the content of the solvent is not particularly limited, it is preferably 100 to 10,000 parts by mass, based on 100 parts by mass of the lower layer film-forming material, from the viewpoint of solubility and film formation. It is more preferably 000 parts by mass, and even more preferably 200 to 1,000 parts by mass.

[Crosslinking agent]
From the viewpoint of suppressing intermixing, the underlayer film-forming material may contain a cross-linking agent, if necessary. Although the cross-linking agent that can be used in the present embodiment is not particularly limited, for example, the acid cross-linking agent described in International Publication No. 2013/024779 can be used.

Specific examples of cross-linking agents that can be used in the present embodiment include phenol compounds, epoxy compounds, cyanate compounds, amino compounds, benzoxazine compounds, acrylate compounds, melamine compounds, guanamine compounds, glycoluril compounds, urea compounds, and isocyanates. compounds, azide compounds and the like, but are not particularly limited thereto. These cross-linking agents can be used singly or in combination of two or more. Among these, a benzoxazine compound, an epoxy compound, or a cyanate compound is preferred, and a benzoxazine compound is more preferred from the viewpoint of improving etching resistance.

The active group (phenolic hydroxyl group, epoxy group, cyanate group, amino group, or phenolic hydroxyl group formed by ring-opening the alicyclic moiety of benzoxazine) possessed by these cross-linking agents is a carbon-carbon dichotomous group that constitutes the maleimide group. In addition to cross-linking by addition reaction with a heavy bond, two carbon-carbon double bonds of the bismaleimide compound of the present embodiment are polymerized to cross-link.

A known epoxy compound can be used as the epoxy compound, and is selected from those having two or more epoxy groups in one molecule. For example, bisphenol A, bisphenol F, 3,3′,5,5′-tetramethyl-bisphenol F, bisphenol S, fluorene bisphenol, 2,2′-biphenol, 3,3′,5,5′-tetramethyl- 4,4'-dihydroxybiphenol, resorcinol, epoxidized dihydric phenols such as naphthalene diols, tris-(4-hydroxyphenyl)methane, 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane , Tris (2,3-epoxypropyl) isocyanurate, trimethylolmethane triglycidyl ether, trimethylolpropane triglycidyl ether, triethylolethane triglycidyl ether, phenol novolak, o-cresol novolak, and other trihydric or higher phenols Epoxidized products, epoxidized products of co-condensation resins of dicyclopentadiene and phenols, epoxidized products of phenol aralkyl resins synthesized from phenols and paraxylylene dichloride, etc., biphenyls synthesized from phenols and bischloromethylbiphenyl, etc. Examples include epoxidized aralkyl phenol resins and epoxidized naphthol aralkyl resins synthesized from naphthols and paraxylylene dichloride. These epoxy resins may be used alone or in combination of two or more. From the viewpoint of heat resistance and solubility, epoxy resins that are solid at room temperature, such as epoxy resins obtained from phenol aralkyl resins and biphenyl aralkyl resins, are preferred.

The cyanate compound is not particularly limited as long as it is a compound having two or more cyanate groups in one molecule, and known compounds can be used. In this embodiment, preferred cyanate compounds include those having a structure in which the hydroxyl groups of a compound having two or more hydroxyl groups in one molecule are substituted with cyanate groups. Moreover, the cyanate compound preferably has an aromatic group, and a cyanate compound having a structure in which the cyanate group is directly linked to the aromatic group can be preferably used. Examples of such cyanate compounds include bisphenol A, bisphenol F, bisphenol M, bisphenol P, bisphenol E, phenol novolak resin, cresol novolak resin, dicyclopentadiene novolak resin, tetramethylbisphenol F, bisphenol A novolak resin, bromine bisphenol A, brominated phenol novolac resin, trifunctional phenol, tetrafunctional phenol, naphthalene-type phenol, biphenyl-type phenol, phenol aralkyl resin, biphenyl aralkyl resin, naphthol aralkyl resin, dicyclopentadiene aralkyl resin, alicyclic phenol, phosphorus Examples include those having a structure in which the hydroxyl group of the contained phenol or the like is substituted with a cyanate group. These cyanate compounds may be used alone or in combination of two or more. Moreover, the cyanate compound described above may be in any form of a monomer, an oligomer, or a resin.

Examples of the amino compounds include m-phenylenediamine, p-phenylenediamine, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylpropane, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3 ,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3′-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis [4-(3-aminophenoxy)phenyl]propane, 4,4′-bis(4-aminophenoxy)biphenyl, 4,4′-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy) ) phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 9,9-bis(4-aminophenyl)fluorene, 9,9-bis(4-amino-3-chlorophenyl)fluorene, 9, 9-bis(4-amino-3-fluorophenyl)fluorene, O-tolidine, m-tolidine, 4,4'-diaminobenzanilide, 2,2'-bis(trifluoromethyl)-4,4'-diamino Examples include biphenyl, 4-aminophenyl-4-aminobenzoate, 2-(4-aminophenyl)-6-aminobenzoxazole and the like. Among these, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylpropane, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, 4,4′- Diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy) Benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2 -bis[4-(3-aminophenoxy)phenyl]propane, 4,4'-bis(4-aminophenoxy)biphenyl, 4,4'-bis(3-aminophenoxy)biphenyl, bis[4-(4- Aromatic amines such as aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, diaminocyclohexane, diaminodicyclohexylmethane, dimethyl-diaminodicyclohexylmethane, tetramethyl-diaminodicyclohexylmethane, diaminodicyclohexylpropane , diaminobicyclo[2.2.1]heptane, bis(aminomethyl)-bicyclo[2.2.1]heptane, 3(4),8(9)-bis(aminomethyl)tricyclo[5.2.1 .02,6] decane, 1,3-bisaminomethylcyclohexane, isophoronediamine and other alicyclic amines, ethylenediamine, hexamethylenediamine, octamethylenediamine, decamethylenediamine, diethylenetriamine, triethylenetetramine and other aliphatic amines and the like.

Examples of the benzoxazine compounds include Pd-type benzoxazines obtained from bifunctional diamines and monofunctional phenols, Fa-type benzoxazines obtained from monofunctional diamines and bifunctional phenols, and the like. be done.

Specific examples of the melamine compound include hexamethylolmelamine, hexamethoxymethylmelamine, compounds in which 1 to 6 methylol groups of hexamethylolmelamine are methoxymethylated, or mixtures thereof, hexamethoxyethylmelamine, and hexaacyloxymethyl. Examples include compounds in which 1 to 6 methylol groups of melamine and hexamethylolmelamine are acyloxymethylated, or mixtures thereof.

Specific examples of the guanamine compound include, for example, tetramethylolguanamine, tetramethoxymethylguanamine, compounds in which 1 to 4 methylol groups of tetramethylolguanamine are methoxymethylated, or mixtures thereof, tetramethoxyethylguanamine, and tetraacyloxyguanamine. , a compound obtained by acyloxymethylating 1 to 4 methylol groups of tetramethylolguanamine, or a mixture thereof.

Specific examples of the glycoluril compounds include, for example, tetramethylolglycoluril, tetramethoxyglycoluril, tetramethoxymethylglycoluril, compounds in which 1 to 4 methylol groups of tetramethylolglycoluril are methoxymethylated, or mixtures thereof; Examples include compounds in which 1 to 4 methylol groups of tetramethylolglycoluril are acyloxymethylated, or mixtures thereof.

Specific examples of the urea compound include tetramethylol urea, tetramethoxymethyl urea, compounds in which 1 to 4 methylol groups of tetramethylol urea are methoxymethylated, mixtures thereof, and tetramethoxyethyl urea.

Moreover, in the present embodiment, a cross-linking agent having at least one allyl group may be used from the viewpoint of improving the cross-linkability. Specific examples of cross-linking agents having at least one allyl group include 2,2-bis(3-allyl-4-hydroxyphenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2 -bis(3-allyl-4-hydroxyphenyl)propane, bis(3-allyl-4-hydroxyphenyl)sulfone, bis(3-allyl-4-hydroxyphenyl)sulfide, bis(3-allyl-4-hydroxyphenyl) ) ether and other allylphenols, 2,2-bis(3-allyl-4-cyanatophenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2-bis(3 -allyl-4-cyanatophenyl)propane, bis(3-allyl-4-cyanatophenyl)sulfone, bis(3-allyl-4-cyanatophenyl)sulfide, bis(3-allyl-4-cyanatophenyl) ) Allyl cyanates such as ether, diallyl phthalate, diallyl isophthalate, diallyl terephthalate, triallyl isocyanurate, trimethylolpropane diallyl ether, pentaerythritol allyl ether, etc., but are limited to those exemplified. not a thing These may be used alone or as a mixture of two or more. Among these, 2,2-bis(3-allyl-4-hydroxyphenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2-bis(3-allyl-4-hydroxyphenyl) ) Allylphenols such as propane, bis(3-allyl-4-hydroxyphenyl)sulfone, bis(3-allyl-4-hydroxyphenyl)sulfide, bis(3-allyl-4-hydroxyphenyl)ether are preferred. .

The content of the cross-linking agent in the composition is not particularly limited, but it is preferably 0.1 to 100 parts by weight, preferably 5 to 50 parts by weight, with respect to 100 parts by weight of the total weight of the composition containing the above-mentioned compounds or resins. It is more preferably 10 to 40 parts by mass. By setting the content of the cross-linking agent within the above range, the mixing phenomenon with the resist layer tends to be suppressed, the antireflection effect is enhanced, and the film formability after cross-linking tends to be enhanced. .

[Crosslinking accelerator]
A cross-linking accelerator for accelerating the cross-linking and curing reaction can be used in the underlayer film-forming material of the present embodiment, if necessary.

The cross-linking accelerator is not particularly limited as long as it promotes cross-linking and curing reaction, and examples thereof include amines, imidazoles, organic phosphines, and Lewis acids. These cross-linking accelerators can be used singly or in combination of two or more. Among these, imidazoles and organic phosphines are preferred, and imidazoles are more preferred from the viewpoint of lowering the cross-linking temperature.

Examples of the crosslinking accelerator include, but are not limited to, 1,8-diazabicyclo(5,4,0)undecene-7, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylamino methyl)phenol, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 2-heptadecylimidazole, 2,4,5- Imidazoles such as triphenylimidazole, organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine and phenylphosphine, tetraphenylphosphonium/tetraphenylborate, tetraphenylphosphonium/ethyltriphenylborate, tetrabutyl Examples thereof include tetra-substituted phosphonium/tetra-substituted borate such as phosphonium/tetrabutyl borate, 2-ethyl-4-methylimidazole/tetraphenyl borate, and tetraphenyl boron salts such as N-methylmorpholine/tetraphenyl borate.

The content of the cross-linking accelerator is usually preferably 0.1 to 10 parts by mass when the total mass of the composition is 100 parts by mass, and more preferably from the viewpoint of ease of control and economy. 0.1 to 5 parts by mass, more preferably 0.1 to 3 parts by mass.

[Radical polymerization initiator]
A radical polymerization initiator can be blended into the underlayer film-forming material of the present embodiment, if necessary. The radical polymerization initiator may be a photopolymerization initiator that initiates radical polymerization with light, or a thermal polymerization initiator that initiates radical polymerization with heat. The radical polymerization initiator can be, for example, at least one selected from the group consisting of ketone-based photopolymerization initiators, organic peroxide-based polymerization initiators and azo-based polymerization initiators.

Such a radical polymerization initiator is not particularly limited, and conventionally used ones can be appropriately employed. For example, 1-hydroxycyclohexylphenyl ketone, benzyl dimethyl ketal, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2 -methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methylpropan-1-one, 2 ,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide and other ketone photoinitiators, methyl ethyl ketone peroxide, cyclohexanone peroxide, methylcyclohexanone peroxide, etc. oxide, methyl acetoacetate peroxide, acetyl acetate peroxide, 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-hexylperoxy)-cyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-butylperoxy)-2-methylcyclohexane, 1,1-bis(t-butylperoxy) oxy)-cyclohexane, 1,1-bis(t-butylperoxy)cyclododecane, 1,1-bis(t-butylperoxy)butane, 2,2-bis(4,4-di-t-butylperoxy) oxycyclohexyl)propane, p-menthane hydroperoxide, diisopropylbenzene hydroperoxide, 1,1,3,3-tetramethylbutyl hydroperoxide, cumene hydroperoxide, t-hexyl hydroperoxide, t-butyl hydroperoxide oxide, α,α'-bis(t-butylperoxy)diisopropylbenzene, dicumyl peroxide, 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane, t-butylcumyl peroxide, Di-t-butyl peroxide, 2,5-dimethyl-2,5-bis(t-butylperoxy)hexyne-3, isobutyryl peroxide, 3,5,5-trimethylhexanoyl peroxide, octanoyl peroxide oxide, lauroyl peroxide, stearoyl peroxide, succinic acid peroxide, m-toluoylbenzoyl peroxide, benzoyl peroxide, di-n-propylperoxydicarbonate, diisopropylperoxydicarbonate, bis(4-t-butyl cyclohexyl) peroxydicarbonate, di-2-ethoxyethyl peroxydicarbonate, di-2-ethoxyhexyl peroxydicarbonate, di-3-methoxybutyl peroxydicarbonate, di-s-butyl peroxydicarbonate, Di(3-methyl-3-methoxybutyl)peroxydicarbonate, α,α'-bis(neodecanoylperoxy)diisopropylbenzene, cumyl peroxyneodecanoate, 1,1,3,3-tetramethyl Butyl peroxyneodecanoate, 1-cyclohexyl-1-methylethyl peroxyneodecanoate, t-hexyl peroxyneodecanoate, t-butyl peroxyneodecanoate, t-hexyl peroxypivalate , t-butyl peroxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanooate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy) Hexanoate, 1-cyclohexyl-1-methylethylperoxy-2-ethylhexanoate, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-hexylper Oxyisopropyl monocarbonate, t-butyl peroxyisobutyrate, t-butyl peroxymalate, t-butyl peroxy-3,5,5-trimethylhexanoate, t-butyl peroxylaurate, t- Butyl peroxyisopropyl monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-butyl peroxyacetate, t-butyl peroxy-m-toluylbenzoate, t-butyl peroxybenzoate, bis(t-butyl per oxy)isophthalate, 2,5-dimethyl-2,5-bis(m-toluylperoxy)hexane, t-hexylperoxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, t-butyl peroxyallyl monocarbonate, t-butyltrimethylsilyl peroxide, 3,3′,4,4′-tetra(t-butylperoxycarbonyl)benzophenone, 2,3-dimethyl-2,3-diphenylbutane, etc. and organic peroxide-based polymerization initiators.

Also, 2-phenylazo-4-methoxy-2,4-dimethylvaleronitrile, 1-[(1-cyano-1-methylethyl)azo]formamide, 1,1′-azobis(cyclohexane-1-carbonitrile), 2,2'-azobis (2-methylbutyronitrile), 2,2'-azobisisobutyronitrile, 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis ( 2-methylpropionamidine) dihydrochloride, 2,2′-azobis(2-methyl-N-phenylpropionamidine) dihydrochloride, 2,2′-azobis[N-(4-chlorophenyl)-2-methylpropionamidine] Dihydrido chloride, 2,2′-azobis[N-(4-hydrophenyl)-2-methylpropionamidine]dihydrochloride, 2,2′-azobis[2-methyl-N-(phenylmethyl)propionamidine]dihydro chloride, 2,2'-azobis[2-methyl-N-(2-propenyl)propionamidine]dihydrochloride, 2,2'-azobis[N-(2-hydroxyethyl)-2-methylpropionamidine]dihydrochloride , 2,2′-azobis[2-(5-methyl-2-imidazolin-2-yl)propane]dihydrochloride, 2,2′-azobis[2-(2-imidazolin-2-yl)propane]dihydrochloride , 2,2′-azobis[2-(4,5,6,7-tetrahydro-1H-1,3-diazepin-2-yl)propane] dihydrochloride, 2,2′-azobis[2-(3, 4,5,6-tetrahydropyrimidin-2-yl)propane]dihydrochloride, 2,2′-azobis[2-(5-hydroxy-3,4,5,6-tetrahydropyrimidin-2-yl)propane]dihydro chloride, 2,2′-azobis[2-[1-(2-hydroxyethyl)-2-imidazolin-2-yl]propane]dihydrochloride, 2,2′-azobis[2-(2-imidazoline-2- yl)propane], 2,2′-azobis[2-methyl-N-[1,1-bis(hydroxymethyl)-2-hydroxyethyl]propionamide], 2,2′-azobis[2-methyl-N -[1,1-bis(hydroxymethyl)ethyl]propionamide], 2,2′-azobis[2-methyl-N-(2-hydroxyethyl)propionamide], 2,2′-azobis(2-methyl propionamide), 2,2′-azobis(2,4,4-trimethylpentane), 2,2′-azobis(2-methylpropane), dimethyl-2,2-azobis(2-methylpropionate), Azo polymerization initiators such as 4,4′-azobis(4-cyanopentanoic acid) and 2,2′-azobis[2-(hydroxymethyl)propionitrile] are also included. As the radical polymerization initiator in the present embodiment, one of these may be used alone or two or more of them may be used in combination, and other known polymerization initiators may be further used in combination.

The content of the radical polymerization initiator may be a stoichiometrically necessary amount, but is 0.05 to 25 mass parts when the total mass of the composition containing the above compounds or resins is 100 parts by mass. parts, more preferably 0.1 to 10 parts by mass. When the content of the radical polymerization initiator is 0.05 parts by mass or more, it tends to be possible to prevent insufficient curing, while the content of the radical polymerization initiator is 25 parts by mass or less. In the case of , it tends to be possible to prevent the long-term storage stability of the underlayer film-forming material at room temperature from being impaired.

[Acid generator]
The underlayer film-forming material may contain an acid generator, if necessary, from the viewpoint of further promoting the cross-linking reaction by heat. As acid generators, those that generate acid by thermal decomposition, those that generate acid by light irradiation, and the like are known, and any of them can be used. For example, those described in International Publication No. 2013/024779 can be used.

Although the content of the acid generator in the underlayer film-forming material is not particularly limited, it is preferably 0.1 to 50 parts by mass, more preferably 0.5 parts by mass, based on 100 parts by mass of the underlayer film-forming material. ~40 parts by mass. By adjusting the amount to within the above preferred range, the amount of acid generated tends to increase and the cross-linking reaction tends to be enhanced, and the occurrence of the phenomenon of mixing with the resist layer tends to be suppressed.

[Basic compound]
Furthermore, the underlayer film-forming material may contain a basic compound from the viewpoint of improving storage stability.

The basic compound plays a role of a quencher for the acid to prevent the progress of the cross-linking reaction of the acid generated in a trace amount by the acid generator. Examples of such a basic compound include, but are not particularly limited to, those described in International Publication No. 2013/024779.

In the underlayer film-forming material, the content of the basic compound is not particularly limited, but is preferably 0.001 to 2 parts by mass, more preferably 0.01, per 100 parts by mass of the underlayer film-forming material. ~1 part by mass. When the content is within the preferred range, the storage stability tends to be enhanced without excessively impairing the cross-linking reaction.

[Other additives]
Further, the underlayer film-forming material in the present embodiment may contain other resins and/or compounds for the purpose of imparting heat or light curability and controlling absorbance. Such other resins and/or compounds include naphthol resins, xylene resins naphthol-modified resins, phenol-modified naphthalene resins, polyhydroxystyrenes, dicyclopentadiene resins, (meth)acrylates, dimethacrylates, trimethacrylates, tetra Naphthalene rings such as methacrylate, vinylnaphthalene and polyacenaphthylene; biphenyl rings such as phenanthrenequinone and fluorene; resins containing heterocycles having heteroatoms such as thiophene and indene; and resins free of aromatic rings; Resins or compounds containing an alicyclic structure such as cyclodextrin, adamantane (poly)ol, tricyclodecane (poly)ol, and derivatives thereof may be mentioned, but not limited thereto. Furthermore, the underlayer film-forming material in the present embodiment may contain known additives. Examples of known additives include, but are not limited to, heat and/or photocuring catalysts, polymerization inhibitors, flame retardants, fillers, coupling agents, thermosetting resins, photosetting resins, dyes, Pigments, thickeners, lubricants, antifoaming agents, leveling agents, UV absorbers, surfactants, colorants, nonionic surfactants and the like can be mentioned.

[Method for forming underlayer film for lithography and multilayer resist pattern]
An underlayer film for lithography can be formed using the underlayer film-forming material.

At this time, a step (A-1) of forming an underlayer film on a substrate using the underlayer film-forming material (composition of the present embodiment), and forming at least one photoresist layer on the underlayer film. and a step (A-3) of irradiating a predetermined region of the photoresist layer with radiation and developing after the second forming step (A-3). can be used.

Further, another pattern forming method (circuit pattern forming method) of the present embodiment comprises a step (B-1) of forming an underlayer film on a substrate using the underlayer film forming material (composition of the present embodiment). forming an intermediate layer film on the underlayer film using a resist intermediate layer film material (B-2); and forming at least one photoresist layer on the intermediate layer film (B -3), and after the step (B-3), a step (B-4) of irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern, and the step (B- After 4), the intermediate layer film is etched using the resist pattern as a mask, the lower layer film is etched using the obtained intermediate layer film pattern as an etching mask, and the substrate is etched using the obtained lower layer film pattern as an etching mask. and a step (B-5) of forming a pattern on the substrate. The resist intermediate layer film material may contain silicon atoms.

As long as the underlayer film for lithography in the present embodiment is formed from the underlayer film-forming material, the formation method is not particularly limited, and known techniques can be applied. For example, after the underlayer film material of the present embodiment is applied onto a substrate by a known coating method such as spin coating or screen printing or a printing method, the organic solvent is removed by volatilization or the like, and then crosslinked by a known method. can be cured to form the underlayer film for lithography of this embodiment. Examples of cross-linking methods include techniques such as heat curing and photo-curing.

When forming the lower layer film, it is preferable to perform baking in order to suppress the occurrence of the mixing phenomenon with the upper layer resist and promote the cross-linking reaction. In this case, the baking temperature is not particularly limited, but is preferably in the range of 80 to 450.degree. C., more preferably 200 to 400.degree. Also, the baking time is not particularly limited, but it is preferably in the range of 10 to 300 seconds. The thickness of the underlayer film can be appropriately selected according to the required performance, and is not particularly limited, but is usually preferably about 30 to 20,000 nm, more preferably 50 to 15,000 nm. is preferred.

After the underlayer film is formed, a silicon-containing resist layer or a single-layer resist made of ordinary hydrocarbons is placed thereon in the case of a two-layer process, and a silicon-containing intermediate layer is placed thereon in the case of a three-layer process, and then a silicon-containing intermediate layer is placed thereon in the case of a three-layer process. It is preferable to produce a single layer resist layer that does not contain silicon. In this case, a known photoresist material can be used for forming this resist layer.

After the underlayer film is formed on the substrate, a silicon-containing resist layer or a conventional hydrocarbon monolayer resist can be formed over the underlayer film in the case of a two-layer process. In the case of a three-layer process, a silicon-containing intermediate layer can be formed on the underlayer film, and a silicon-free monolayer resist layer can be formed on the silicon-containing intermediate layer. In these cases, the photoresist material for forming the resist layer can be appropriately selected from known materials and used, and is not particularly limited.

As a silicon-containing resist material for a two-layer process, from the viewpoint of oxygen gas etching resistance, a silicon atom-containing polymer such as a polysilsesquioxane derivative or a vinylsilane derivative is used as a base polymer, and an organic solvent, an acid generator, A positive photoresist material containing a basic compound or the like, if necessary, is preferably used. Here, as the silicon atom-containing polymer, a known polymer used in this type of resist material can be used.

A polysilsesquioxane-based intermediate layer is preferably used as the silicon-containing intermediate layer for the three-layer process. Reflection tends to be effectively suppressed by providing the intermediate layer with an antireflection film effect. For example, in a 193 nm exposure process, if a material containing many aromatic groups and having high substrate etching resistance is used as the underlayer film, the k value tends to increase and the substrate reflection tends to increase. can reduce the substrate reflection to 0.5% or less. The intermediate layer having such an antireflection effect is not limited to the following, but for 193 nm exposure, an acid- or heat-crosslinkable polysilsesquioxylate having a phenyl group or a silicon-silicon bond-containing light-absorbing group is introduced. Sun is preferably used.

An intermediate layer formed by a chemical vapor deposition (CVD) method can also be used. Although not limited to the following, for example, an ion film is known as an intermediate layer that is highly effective as an antireflection film produced by a CVD method. In general, forming an intermediate layer by a wet process such as a spin coating method or screen printing is simpler and more cost effective than a CVD method. The upper layer resist in the three-layer process may be either positive type or negative type, and may be the same as a commonly used single layer resist.

Furthermore, the underlayer film in this embodiment can also be used as an antireflection film for a normal single-layer resist or as a base material for suppressing pattern collapse. Since the underlayer film of the present embodiment is excellent in etching resistance for underlayer processing, it can be expected to function as a hard mask for underlayer processing.

When the resist layer is formed from the photoresist material, a wet process such as spin coating or screen printing is preferably used as in the case of forming the underlayer film. After the resist material is applied by spin coating or the like, prebaking is usually performed, and this prebaking is preferably performed at 80 to 180° C. for 10 to 300 seconds. After that, exposure, post-exposure baking (PEB), and development are carried out according to a conventional method, whereby a resist pattern can be obtained. Although the thickness of the resist film is not particularly limited, it is generally preferably 30 to 500 nm, more preferably 50 to 400 nm.

Moreover, the exposure light may be appropriately selected and used according to the photoresist material to be used. In general, high-energy rays with a wavelength of 300 nm or less, specifically excimer lasers of 248 nm, 193 nm and 157 nm, soft X-rays of 3 to 20 nm, electron beams, X-rays and the like can be used.

In the resist pattern formed by the above method, pattern collapse is suppressed by the underlayer film of the present embodiment. Therefore, by using the underlayer film of this embodiment, a finer pattern can be obtained, and the exposure dose required for obtaining the resist pattern can be reduced.

Next, etching is performed using the obtained resist pattern as a mask. Gas etching is preferably used for etching the lower layer film in the two-layer process. As the gas etching, etching using oxygen gas is suitable. In addition to oxygen gas, it is also possible to add inert gases such as He and Ar, and CO, _CO2 , _NH3 , _SO2 , _N2 , NO2 _{and H2} gases. Gas etching can also be performed using only CO, CO ₂ , NH ₃ , N ₂ , NO _{2 and} H ₂ gases without using oxygen gas. In particular, the latter gas is preferably used for sidewall protection to prevent undercutting of pattern sidewalls.

On the other hand, gas etching is also preferably used for etching the intermediate layer in the three-layer process. As the gas etching, the same one as described in the above two-layer process can be applied. In particular, it is preferable to process the intermediate layer in the three-layer process using a freon-based gas and using a resist pattern as a mask. After that, as described above, the intermediate layer pattern is used as a mask to perform, for example, oxygen gas etching, whereby the lower layer film can be processed.

Here, when an inorganic hard mask intermediate layer film is formed as the intermediate layer, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (sion film) is formed by a CVD method, an ALD method, or the like. Although the method for forming the nitride film is not limited to the following, for example, the methods described in JP-A-2002-334869 (Patent Document 6 mentioned above) and WO2004/066377 (Patent Document 7 mentioned above) can be used. can. Although a photoresist film can be directly formed on such an intermediate layer film, an organic anti-reflective coating (BARC) is formed on the intermediate layer film by spin coating, and a photoresist film is formed thereon. You may

As an intermediate layer, a polysilsesquioxane-based intermediate layer is also preferably used. Reflection tends to be effectively suppressed by giving the resist intermediate layer film an effect as an antireflection film. Specific materials for the polysilsesquioxane-based intermediate layer are not limited to the following. 9) can be used.

Etching of the _next substrate can also be carried out by a conventional method. Gas-based etching can be performed. When the substrate is etched with Freon-based gas, the silicon-containing resist in the two-layer resist process and the silicon-containing intermediate layer in the three-layer process are stripped at the same time as the substrate is processed. On the other hand, when the substrate is etched with a chlorine-based or bromine-based gas, the silicon-containing resist layer or the silicon-containing intermediate layer is removed separately, and generally, after the substrate is processed, the dry-etching removal is performed with a flon-based gas. .

The underlayer film is characterized by being excellent in etching resistance of these substrates. The substrate can be appropriately selected and used from known substrates _, and is not particularly limited. . The substrate may also be a laminate having a film to be processed (substrate to be processed) on a base material (support). Such films to be processed include various Low-k films such as Si, SiO ₂ , Si, sin, p-Si, α-Si, W, W-Si, Al, Cu, and Al-Si, and their stopper films. etc., and usually a material different from that of the substrate (support) is used. Although the thickness of the substrate to be processed or the film to be processed is not particularly limited, it is generally preferably about 50 to 10,000 nm, more preferably 75 to 5,000 nm.

[Permanent resist film]
A resist permanent film can also be produced using the composition, and the resist permanent film formed by applying the composition of the present embodiment remains in the final product after forming a resist pattern as necessary. It is suitable as a permanent film to be used. Specific examples of permanent films include solder resists, package materials, underfill materials, package adhesive layers for circuit elements and the like, adhesive layers between integrated circuit elements and circuit boards, and thin film transistor protective films for thin displays. Liquid crystal color filter protective film, black matrix, spacer and the like. In particular, the permanent film made of the composition of the present embodiment has excellent heat resistance and moisture resistance, and also has the very excellent advantage of being less susceptible to contamination by sublimation components. Especially for display materials, it becomes a material that has high sensitivity, high heat resistance, and moisture absorption reliability with less deterioration of image quality due to contamination, which is important.

When using the composition of the present embodiment for resist permanent film applications, in addition to the curing agent, various additions such as other resins, surfactants and dyes, fillers, cross-linking agents, and dissolution accelerators as necessary By adding the agent and dissolving in an organic solvent, a resist permanent film composition can be obtained.

The film-forming composition for lithography and the composition for permanent resist film of the present embodiment can be prepared by blending the components described above and mixing them using a stirrer or the like. Further, when the resist underlayer film composition and the resist permanent film composition of the present embodiment contain fillers and pigments, they are dispersed or mixed using a dispersing device such as a dissolver, homogenizer, or three-roll mill. can be adjusted.

Hereinafter, the present embodiment will be described in more detail with reference to Synthesis Examples and Examples, but the present invention is in no way limited by these examples.

[Molecular weight]
Molecular weights of compounds were determined by LC-MS analysis using a Water Acquity UPLC/MALDI-Synapt HDMS.
In addition, gel permeation chromatography (GPC) analysis was performed under the following conditions to obtain polystyrene-equivalent weight average molecular weight (Mw), number average molecular weight (Mn), and degree of dispersion (Mw/Mn).
Apparatus: Shodex GPC-101 type (manufactured by Showa Denko Co., Ltd.)
Column: KF-80M x 3
Eluent: THF 1 ml/min
Temperature: 40°C

[Solubility]
At 23° C., the compound is stirred to form a 3 wt % solution in propylene glycol monomethyl ether (PGME), cyclohexanone (CHN), ethyl lactate (EL), methyl amyl ketone (MAK) or tetramethyl urea (TMU). and dissolved, and then allowed to pass for one week. The solubility of compounds was evaluated according to the following criteria.
Evaluation A: It was confirmed visually that no precipitate was generated in any of the solvents.
Evaluation C: It was confirmed by visual observation that a precipitate was generated in either solvent.

[Structure of compound]
The structure of the compound was confirmed by ¹ H-NMR measurement under the following conditions using an "Advance 600II spectrometer" manufactured by Bruker.
Frequency: 400mhz
Solvent: d6-DMSO
Internal standard: TMS
Measurement temperature: 23°C

<Synthesis Example 1> Synthesis of XBisN-1 3.20 g (20 mmol) of 2,6-naphthalenediol (reagent manufactured by Sigma-Aldrich) and 4-biphenylcarboxyl were placed in a container having an inner volume of 100 ml equipped with a stirrer, a cooling tube and a burette. 1.82 g (10 mmol) of aldehyde (manufactured by Mitsubishi Gas Chemical Co., Ltd.) was added to 30 ml of methyl isobutyl ketone, 5 ml of 95% sulfuric acid was added, and the reaction solution was stirred at 100° C. for 6 hours to carry out a reaction. Next, the reaction solution was concentrated, 50 g of pure water was added to precipitate a reaction product, cooled to room temperature, and separated by filtration. The resulting solid matter was filtered, dried, and separated and purified by column chromatography to obtain 3.05 g of the target compound represented by the following formula (XBisN-1). It was confirmed by 400 mhz- ¹ H-NMR to have a chemical structure of the following formula (XBisN-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 9.7 (2H, OH), 7.2 to 8.5 (19H, Ph-H), 6.6 (1H, CH)
In addition, it was confirmed from the doublet signals of the protons at the 3rd and 4th positions that the substitution position of 2,6-naphthalenediol was the 1st position.

（ＸＢｉｓＮ－１）

(XBisN-1)

<Synthesis Example 1A> Synthesis of E-XBisN-1 10 g (21 mmol) of the compound represented by the above formula (XBisN-1) and 14.8 g of potassium carbonate ( 107 mmol) was placed in 50 ml of dimethylformamide, 6.56 g (54 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to carry out the reaction. Next, the reaction solution was cooled in an ice bath to deposit crystals, which were separated by filtration. Subsequently, 40 g of the crystals, 40 g of methanol, 100 g of THF and 24% sodium hydroxide aqueous solution were charged into a container having an internal volume of 100 ml equipped with a stirrer, a condenser and a burette, and the reaction mixture was stirred under reflux for 4 hours to carry out the reaction. . Thereafter, the reaction solution is cooled in an ice bath, the reaction mixture is concentrated, the precipitated solid is filtered, dried, and then separated and purified by column chromatography to obtain the desired compound represented by the following formula (E-XBisN-1). .9 g was obtained. It was confirmed by 400 mhz- ¹ H-NMR to have a chemical structure of the following formula (E-XBisN-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 8.6 (2H, OH), 7.2 to 7.8 (19H, Ph-H), 6.7 (1H, CH), 4.0 (4H, -O- CH ₂ —), 3.8(4H, —CH ₂ —OH)

（Ｅ－ＸＢｉｓＮ－１）

(E-XBisN-1)

<Synthesis Example 2> Synthesis of BisF-1 A vessel with an inner volume of 200 ml equipped with a stirrer, a condenser and a burette was prepared. Into this container, 30 g (161 mmol) of 4,4-biphenol (reagent manufactured by Tokyo Kasei Co., Ltd.), 15 g (82 mmol) of 4-biphenylaldehyde (manufactured by Mitsubishi Gas Chemical Co., Ltd.), and 100 ml of butyl acetate were charged. 3.9 g (21 mmol) of acid (reagent manufactured by Kanto Chemical Co., Ltd.) was added to prepare a reaction solution. This reaction solution was stirred at 90° C. for 3 hours to carry out the reaction. Next, the reaction solution was concentrated, 50 g of heptane was added to precipitate a reaction product, cooled to room temperature, and separated by filtration. The solid matter obtained by filtration was dried and then separated and purified by column chromatography to obtain 5.8 g of the target compound (BisF-1) represented by the following formula.
The following peaks were found by 400 mhz- ¹ H-NMR, and it was confirmed to have the chemical structure of the following formula (BisF-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 9.4 (4H, OH), 6.8-7.8 (22H, Ph-H), 6.2 (1H, CH)
As a result of measuring the molecular weight of the obtained compound by the above method, it was 536.

（ＢｉｓＦ－１）

(BisF-1)

<Synthesis Example 2A> Synthesis of E-BisF-1 11.2 g (21 mmol) of the compound represented by the above formula (BisF-1) and 14.0 mmol of potassium carbonate were placed in a container having an internal volume of 100 ml equipped with a stirrer, a cooling tube and a burette. 8 g (107 mmol) of the product was placed in 50 ml of dimethylformamide, 6.56 g (54 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to carry out the reaction. Next, the reaction solution was cooled in an ice bath to deposit crystals, which were separated by filtration. Subsequently, 40 g of the crystals, 40 g of methanol, 100 g of THF and 24% sodium hydroxide aqueous solution were charged into a container having an internal volume of 100 ml equipped with a stirrer, a condenser and a burette, and the reaction mixture was stirred under reflux for 4 hours to carry out the reaction. . Thereafter, the reaction solution is cooled in an ice bath, the reaction mixture is concentrated, and the precipitated solid is filtered, dried, and then separated and purified by column chromatography to obtain the target compound represented by the following formula (E-BisF-1). 5.9 g was obtained.

By 400 mhz- ¹ H-NMR, it was confirmed to have a chemical structure of the following formula (E-BisF-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 8.6 (4H, OH), 6.8 to 7.8 (22H, Ph-H), 6.2 (1H, CH), 4.0 (8H, -O- CH ₂ —), 3.8(8H, —CH ₂ —OH)
As a result of measuring the molecular weight of the obtained compound by the above method, it was 712.

（Ｅ－ＢｉｓＦ－１）

(E-BisF-1)

<Synthesis Example 1-1> Synthesis of SXBisN-1 10.0 g (21 mmol) of the compound represented by the above formula (XBisN-1) and vinylbenzyl chloride were placed in a container having an inner volume of 100 ml equipped with a stirrer, a cooling tube and a burette. (trade name: CMS-P; manufactured by Seimi Chemical Co., Ltd.) was added to 50 ml of dimethylformamide, heated to 50° C. and stirred, and 8.0 g of 28% by mass sodium methoxide (methanol solution) was added. was added from the dropping funnel over 20 minutes, and the reaction mixture was stirred at 50°C for 1 hour to carry out the reaction. Next, 1.6 g of 28% by mass sodium methoxide (methanol solution) was added, the reaction solution was heated to 60° C. and stirred for 3 hours, 1.2 g of 85% by mass phosphoric acid was added, and the mixture was stirred for 10 minutes. After cooling to ° C., the reaction solution is added dropwise to pure water, the precipitated solid is filtered, dried, and then separated and purified by column chromatography to obtain the target compound represented by the following formula (SXBisN-1). 4.0 g was obtained.
By 400 mhz- ¹ H-NMR, it was confirmed to have a chemical structure of the following formula (SXBisN-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 7.2-8.5 (27H, Ph-H), 5.2-6.7 (11H, -CH2-, -CH=CH2, C-H)

（ＳＸＢｉｓＮ－１）

(SXBisN-1)

As a result of measuring the molecular weight of the obtained compound by the method described above, it was 698.
The thermal decomposition temperature was 400° C., the glass transition point was 115° C., and the melting point was 225° C., confirming high heat resistance.

<Synthesis Example 1-2> Synthesis of SE-XBisN-1 Instead of the compound represented by the formula (XBisN-1), the compound represented by the formula (E-XBisN-1) was used. A reaction was carried out in the same manner as in Synthesis Example 1-1 to obtain 4.0 g of the target compound represented by the following formula (SE-XBisN-1).
By 400 mhz- ¹ H-NMR, it was confirmed to have the chemical structure of the following formula (SE-XBisN-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 7.2 to 7.8 (19H, Ph-H), 6.7 (19H, -CH2-CH2-, -CH2-, -CH=CH2, CH)

（ＳＥ－ＸＢｉｓＮ－１）

(SE-XBisN-1)

The molecular weight of the resulting compound was measured by the method described above and was 786.
The thermal decomposition temperature was 380° C., the glass transition point was 100° C., and the melting point was 205° C., confirming high heat resistance.

<Synthesis Example 2-1> Synthesis of SBisF-1 Synthesis Example 1 except that the compound represented by the formula (BisF-1) was used instead of the compound represented by the formula (XBisN-1). -1 to obtain 3.2 g of the target compound represented by the following formula (SBisF-1).
By 400 mhz- ¹ H-NMR, it was confirmed to have the chemical structure of the following formula (sbisf-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 6.8 ~ 7.8 (38H, Ph-H), 6.2 (21H, -CH2-, -CH=CH2, CH)

（ＳＢｉｓＦ－１）

(SBisF-1)

As a result of measuring the molecular weight of the obtained compound by the method described above, it was 1,000.
The thermal decomposition temperature was 400° C., the glass transition point was 90° C., and the melting point was 225° C., confirming high heat resistance.

<Synthesis Example 2-2> Synthesis of SE-BisF-1 Instead of the compound represented by the formula (BisF-1), the compound represented by the formula (E-BisF-1) was used. A reaction was carried out in the same manner as in Synthesis Example 2-1 to obtain 3.3 g of the target compound represented by the following formula (SE-BisF-1).
By 400 mhz- ¹ H-NMR, it was confirmed to have the chemical structure of the following formula (SE-BisF-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
Δ (ppm) 6.8 ~ 7.8 (22H, Ph-H), 6.2 (37H, -CH2-CH2-, -CH2-, -CH=CH2, CH)
The thermal decomposition temperature was 380° C., the glass transition point was 70° C., and the melting point was 200° C., confirming high heat resistance.

（ＳＥ－ＢｉｓＦ－１）

(SE-BisF-1)

As a result of measuring the molecular weight of the obtained compound by the method described above, it was 1,177.
The thermal decomposition temperature was 375° C., the glass transition point was 65° C., and the melting point was 190° C., confirming high heat resistance.
<Synthesis Example 3> Synthesis of BiN-1 In a container with an internal volume of 300 mL equipped with a stirrer, a cooling tube and a burette, 10 g (69.0 mmol) of 2-naphthol (reagent manufactured by Sigma-Aldrich) was melted at 120°C, 0.27 g of sulfuric acid was charged, 2.7 g (13.8 mmol) of 4-acetylbiphenyl (reagent manufactured by Sigma-Aldrich) was added, and the contents were stirred at 120° C. for 6 hours to carry out a reaction to obtain a reaction solution. rice field. Next, 100 mL of N-methyl-2-pyrrolidone (manufactured by Kanto Kagaku Co., Ltd.) and 50 mL of pure water were added to the reaction solution, followed by extraction with ethyl acetate. Next, pure water was added to separate the liquids until the mixture became neutral, and then the mixture was concentrated to obtain a solution.
After the resulting solution was separated by column chromatography, 1.0 g of the objective compound (BiN-1) represented by the following formula (BiN-1) was obtained.
The molecular weight of the resulting compound (BiN-1) was measured by the method described above and was 466.
When the obtained compound (BiN-1) was subjected to NMR measurement under the above measurement conditions, the following peaks were found, confirming that it has the chemical structure of the following formula (BiN-1).
δ (ppm) 9.69 (2H, OH), 7.01 to 7.67 (21H, Ph-H), 2.28 (3H, CH)

<Synthesis Example 3A> Synthesis of E-BiN-1 10.5 g (21 mmol) of the compound represented by the above formula (BiN-1) and 14.8 g of potassium carbonate were placed in a container having an internal volume of 100 ml equipped with a stirrer, a cooling tube and a burette. (107 mmol) was placed in 50 ml of dimethylformamide, 6.56 g (54 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to carry out the reaction. Next, the reaction solution was cooled in an ice bath to deposit crystals, which were separated by filtration. Subsequently, 40 g of the crystals, 40 g of methanol, 100 g of THF and 24% sodium hydroxide aqueous solution were charged into a container having an inner volume of 100 ml equipped with a stirrer, a condenser and a burette, and the reaction mixture was stirred under reflux for 5 hours to carry out the reaction. . Thereafter, the reaction mixture was cooled in an ice bath, the reaction solution was concentrated, and the precipitated solid matter was filtered, dried, and separated and purified by column chromatography to obtain 4.6 g of the target compound represented by the following formula. It was confirmed by 400 MHz- ¹ H-NMR that it had the chemical structure of the following formula.
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 8.6 (2H, OH), 7.2 to 7.8 (19H, Ph-H), 6.7 (1H, CH), 4.0 (4H, -O- CH ₂ —), 3.8(4H, —CH ₂ —OH)

<Synthesis Example 3-1> Synthesis of SBiN-1 10.0 g (21 mmol) of the compound represented by the above formula (BiN-1) and vinylbenzyl chloride were placed in a container having an internal volume of 100 ml equipped with a stirrer, a cooling tube and a burette. (trade name: CMS-P; manufactured by Seimi Chemical Co., Ltd.) was added to 50 ml of dimethylformamide, heated to 50° C. and stirred, and 8.0 g of 28% by mass sodium methoxide (methanol solution) was added. was added from the dropping funnel over 20 minutes, and the reaction mixture was stirred at 50°C for 1 hour to carry out the reaction. Next, 1.6 g of 28% by mass sodium methoxide (methanol solution) was added, the reaction solution was heated to 60° C. and stirred for 3 hours, 1.2 g of 85% by mass phosphoric acid was added, and the mixture was stirred for 10 minutes. After cooling to ° C., the reaction solution is added dropwise to pure water, the precipitated solid is filtered, dried, and then separated and purified by column chromatography to obtain the target compound represented by the following formula (SBiN-1). 4.0 g was obtained.
By 400 MHz- ¹ H-NMR, it was confirmed to have the chemical structure of the following formula (SBiN-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 7.2 to 7.8 (19H, Ph-H), 5.2 to 6.7 (10H, -CH2-, -CH=CH2, CH), 2.3 (3H, - _CH3 )

As a result of measuring the molecular weight of the obtained compound by the method described above, it was 698.
It has a thermal decomposition temperature of 375° C., a glass transition point of 105° C., and a melting point of 212° C., confirming that it has high heat resistance.

<Synthesis Example 3-2> Synthesis of SE-BiN-1 Instead of the compound represented by the formula (BiN-1), the compound represented by the formula (E-BiN-1) was used. A reaction was carried out in the same manner as in Synthesis Example 3-1 to obtain 3.6 g of the desired compound represented by the following formula (SE-BiN-1).
By 400 MHz- ¹ H-NMR, it was confirmed to have a chemical structure of the following formula (SE-BiN-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 7.2 ~ 7.8 (19H, Ph-H), 6.7 (18H, -CH2-CH2-, -CH2-, -CH=CH2, CH), 2.3 (3H , -CH3)

The molecular weight of the resulting compound was measured by the method described above and was 786.
It has a thermal decomposition temperature of 361° C., a glass transition point of 112° C., and a melting point of 212° C., confirming that it has high heat resistance.

<Synthesis Example 4> Synthesis of BiP-1 Instead of 2-naphthol, the reaction was carried out in the same manner as in Synthesis Example 1 except that o-phenylphenol was used. .0 g was obtained.
The molecular weight of the resulting compound (BiP-1) was measured by the method described above and was 466.
When the obtained compound (BiP-1) was subjected to NMR measurement under the above measurement conditions, the following peaks were found, confirming that it has the chemical structure of the following formula (BiP-1).
δ (ppm) 9.67 (2H, OH), 6.98-7.60 (25H, Ph-H), 2.25 (3H, CH)

<Synthesis Example 4A>
11.2 g (21 mmol) of the compound represented by the above formula (BiP-1) and 14.8 g (107 mmol) of potassium carbonate were placed in 50 ml of dimethylformamide in a container having an internal volume of 100 ml equipped with a stirrer, a cooling tube and a buret, 6.56 g (54 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to carry out the reaction. Next, the reaction solution was cooled in an ice bath to deposit crystals, which were separated by filtration. Subsequently, 40 g of the crystals, 40 g of methanol, 100 g of THF and 24% sodium hydroxide aqueous solution were charged into a container having an internal volume of 100 ml equipped with a stirrer, a condenser and a burette, and the reaction mixture was stirred under reflux for 4 hours to carry out the reaction. . Then, after cooling in an ice bath, the reaction solution is concentrated, the precipitated solid is filtered, dried, and then separated and purified by column chromatography to obtain the target compound represented by the following formula (E-BisP-1). 5.9 g was obtained.
By 400 MHz- ¹ H-NMR, it was confirmed to have a chemical structure of the following formula (E-BiP-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 8.6 (4H, O—H), 6.8-7.6 (25H, Ph—H), 4.0 (4H, —O—CH ₂ —), 3.8 (4H, —CH ₂ —OH), 2.2 (3H, CH)
As a result of measuring the molecular weight of the obtained compound by the method described above, it was 606.

<Synthesis Example 4-1> Synthesis of SBiP-1 Synthesis Example except that the compound represented by the formula (BiP-1) was used instead of the compound represented by the formula (XBisN-1). The reaction was carried out in the same manner as in 1-1 to obtain 3.0 g of the target compound represented by the following formula (SBiP-1).
By 400 MHz- ¹ H-NMR, it was confirmed to have a chemical structure of the following formula (SBiP-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 6.8 ~ 7.8 (25H, Ph-H), 5.2 ~ 6.7 (10H, -CH2-, -CH=CH2, CH), 2.3 (3H, - _CH3 )
It has a thermal decomposition temperature of 390° C., a glass transition point of 74° C., and a melting point of 202° C., confirming that it has high heat resistance.

得られた化合物について、前記方法により分子量を測定した結果、７５０であった。

The resulting compound was found to have a molecular weight of 750 as measured by the method described above.

<Synthesis Example 4-2> Synthesis of SE-BiP-1 Instead of the compound represented by the formula (BiP-1), the compound represented by the formula (E-BiP-1) was used. A reaction was carried out in the same manner as in Synthesis Example 4-1 to obtain 2.9 g of the target compound represented by the following formula (SE-BiP-1).
By 400 MHz- ¹ H-NMR, it was confirmed to have a chemical structure of the following formula (SE-BiP-1).
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 6.8 ~ 7.8 (25H, Ph-H), 6.7 (18H, -CH2-CH2-, -CH2-, -CH=CH2, CH), 2.3 (3H , -CH3)

As a result of measuring the molecular weight of the obtained compound by the method described above, it was 838.
It has a thermal decomposition temperature of 365° C., a glass transition point of 82° C., and a melting point of 220° C., confirming that it has high heat resistance.

(Synthesis Examples 5-17)
2-naphthol (raw material 1) and 4-acetylbiphenyl (raw material 2), which are the raw materials of Synthesis Example 3, were changed as shown in Table 1, and the rest was carried out in the same manner as in Synthesis Example 3 to obtain each desired product.
Each was identified by 1H-NMR.

(Synthesis Examples 18-20)
4-biphenylcarboxaldehyde, which is the raw material of Synthesis Example 1, was changed as shown in Table 3, and the rest was carried out in the same manner as in Synthesis Example 1 to obtain each desired product.
Each was identified by 1H-NMR.

(Synthesis Examples 21-22)
2-naphthol (raw material 1) and 4-acetylbiphenyl (raw material 2), which are raw materials of Synthesis Example 3, were changed as shown in Table 5, and 1.5 mL of water, 73 mg (0.35 mmol) of dodecyl mercaptan, 37% hydrochloric acid 2 .3 g (22 mmol) was added, the reaction temperature was changed to 55° C., and the others were carried out in the same manner as in Synthesis Example 31 to obtain each desired product.
Each was identified by 1H-NMR.

(Synthesis Examples 5A to 22A)
The compound represented by the formula (BiN-1), which is the raw material of Synthesis Example 3A, was changed as shown in Table 7, and the other was synthesized under the same conditions as in Synthesis Example 3A, and the desired product was obtained. . The structure of each compound was identified by confirming the molecular weight with 400 MHz- ¹ H-NMR (d-DMSO, internal standard TMS) and LC-MS.

(Synthesis Examples 5-1 to 22-1)
The compound represented by the formula (BiN-1), which is the raw material of Synthesis Example 3-1, was changed as shown in Table 7, and synthesis was performed under the same conditions as in Synthesis Example 3-1, respectively. , got the object. The structure of each compound was identified by confirming the molecular weight with 400 MHz- ¹ H-NMR (d-DMSO, internal standard TMS) and LC-MS.

(Synthesis Examples 5-2 to 22-2)
Synthesis was carried out under the same conditions as in Synthesis Example 3-2 except that the compound represented by the above formula (E-BiN-1), which is the raw material of Synthesis Example 3-2, was changed as shown in Table 7. , respectively, obtained the object. The structure of each compound was identified by confirming the molecular weight with 400 MHz- ¹ H-NMR (d-DMSO, internal standard TMS) and LC-MS.

<Synthesis Example 23> Synthesis of Resin (R1-XBisN-1) A four-necked flask with an internal volume of 1 L and capable of bottom extraction, equipped with a Dimroth condenser, a thermometer and a stirring blade was prepared. Into this four-necked flask, 32.6 g (70 mmol, manufactured by Mitsubishi Gas Chemical Co., Ltd.) of the compound (XBisN-1) obtained in Synthesis Example 1, 21.0 g of a 40% by mass formalin aqueous solution (formaldehyde 280 mmol, manufactured by Mitsubishi Gas Chemical Co., Ltd.) and 0.97 mL of 98% by mass sulfuric acid (manufactured by Kanto Chemical Co., Ltd.) were charged and reacted under normal pressure for 7 hours while refluxing at 100°C. After that, 180.0 g of ortho-xylene (special reagent grade manufactured by Wako Pure Chemical Industries, Ltd.) was added as a diluting solvent to the reaction solution, and after standing, the lower aqueous phase was removed. Furthermore, neutralization and washing with water were carried out, and ortho-xylene was distilled off under reduced pressure to obtain 34.1 g of a brown solid resin (R1-XBisN-1).

The obtained resin (R1-XBisN-1) had Mn: 1975, Mw: 3650 and Mw/Mn: 1.84.

<Synthesis Example 24> Synthesis of Resin (R2-XBisN-1) A four-necked flask with an inner volume of 1 L and capable of bottom extraction was prepared, equipped with a Dimroth condenser, a thermometer and a stirring blade. Into this four-neck flask, 32.6 g (70 mmol, manufactured by Mitsubishi Gas Chemical Co., Ltd.) of the compound (XBisN-1) obtained in Synthesis Example 1 and 50.9 g (280 mmol, Mitsubishi Gas Chemical Co., Ltd.), 100 mL of anisole (Kanto Chemical Co., Ltd.), and 10 mL of oxalic acid dihydrate (Kanto Chemical Co., Ltd.) are charged and reacted under normal pressure at 100° C. for 7 hours while refluxing. let me After that, 180.0 g of ortho-xylene (special reagent grade manufactured by Wako Pure Chemical Industries, Ltd.) was added as a diluting solvent to the reaction solution, and after standing, the lower aqueous phase was removed. Furthermore, neutralization and washing with water were carried out, and the organic phase solvent and unreacted 4-biphenylaldehyde were distilled off under reduced pressure to obtain 34.7 g of a brown solid resin (R2-XBisN-1).

The obtained resin (R2-XBisN-1) had Mn: 1610, Mw: 2567 and Mw/Mn: 1.59.

<Synthesis Example 23A> Synthesis of E-R1-XBisN-1 30 g of the resin (R1-XBisN-1) represented by the above formula and 29.5 g of potassium carbonate were placed in a container having an internal volume of 500 ml equipped with a stirrer, a cooling tube and a burette. 6 g (214 mmol) of the product was added to 100 ml of dimethylformamide, 13.12 g (108 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to carry out the reaction. Next, the reaction solution was cooled in an ice bath to deposit crystals, which were separated by filtration. Subsequently, 40 g of the crystals, 80 g of methanol, 100 g of THF and 24% sodium hydroxide aqueous solution were charged into a container having an inner volume of 100 ml equipped with a stirrer, a condenser and a burette, and the reaction mixture was stirred under reflux for 4 hours to carry out the reaction. . After cooling in an ice bath, the reaction solution was concentrated, and the precipitated solid was filtered and dried to obtain 26.5 g of a brown solid resin (ER1-XBisN-1).

The resulting resin (ER1-XBisN-1) had Mn: 2176, Mw: 3540, and Mw/Mn: 1.62.

<Synthesis Example 23-1> Synthesis of SR1-XBisN-1 20.0 g of the resin represented by the above formula (R1-XBisN-1) and vinyl benzyl 12.8 g of chloride (trade name: CMS-P; manufactured by Seimi Chemical Co., Ltd.) was added to 200 ml of dimethylformamide, heated to 50° C. and stirred while adding 28% by mass of sodium methoxide (methanol solution). 0 g was added from the dropping funnel over 20 minutes, and the reaction mixture was stirred at 50° C. for 1 hour to carry out the reaction. Next, 3.2 g of 28% by mass sodium methoxide (methanol solution) was added, the reaction solution was heated to 60° C. and stirred for 5 hours. After cooling to 50°C, the reaction solution is dropped into pure water and the precipitated solid is filtered and dried. After drying, 27.2 g of the resin represented by (SR1-XBisN-1) were obtained as a gray solid.

The resulting resin (SR1-XBisN-1) had Mn: 1989, Mw: 2840, and Mw/Mn: 1.43.

<Synthesis Example 23-2> Synthesis of SE-R1-XBisN-1 Instead of the resin represented by the formula (R1-XBisN-1) obtained in Synthesis Example 23, the above obtained in Synthesis Example 23A The reaction was carried out in the same manner as in Synthesis Example 23-1 except that the formula (E-R1-XBisN-1) was used to obtain 31.3 g of a resin represented by (SE-R1-XBisN-1) as a brown solid. rice field.

The resulting resin (SE-R1-XBisN-1) had Mn: 2378, Mw: 3930 and Mw/Mn: 1.65.

<Synthesis Example 24A> Synthesis of E-R2-XBisN-1 30 g of the above resin (R2-XBisN-1) and 29.6 g (214 mmol) of potassium carbonate were placed in a container having an internal volume of 500 ml equipped with a stirrer, a cooling tube and a burette. was added to 100 ml of dimethylformamide, 13.12 g (108 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to carry out the reaction. Next, the reaction solution was cooled in an ice bath to deposit crystals, which were separated by filtration. Subsequently, 40 g of the crystals, 80 g of methanol, 100 g of THF and 24% sodium hydroxide aqueous solution were charged into a container having an inner volume of 100 ml equipped with a stirrer, a condenser and a burette, and the reaction mixture was stirred under reflux for 4 hours to carry out the reaction. . After cooling in an ice bath, the reaction solution was concentrated, and the precipitated solid was filtered and dried to obtain 22.3 g of a brown solid resin (ER2-XBisN-1).

The resulting resin (ER2-XBisN-1) had Mn: 2516, Mw: 3960, and Mw/Mn: 1.62.

<Synthesis Example 24-1> Synthesis of SR2-XBisN-1 Instead of the above formula (R1-XBisN-1) obtained in Synthesis Example 23, the above formula (R2-XBisN-1 ) was used in the same manner as in Synthesis Example 23-1 except that 30.5 g of the compound represented by (SR2-XBisN-1) was used to obtain 35.1 g of a light gray solid resin represented by (SR2-XBisN-1).

The resulting resin (SR2-XBisN-1) had Mn: 2344, Mw: 4215 and Mw/Mn: 1.80.

<Synthesis Example 24-2> Synthesis of SE-R2-XBisN-1 Instead of the resin represented by the above formula (R1-XBisN-1) obtained in Synthesis Example 23, the above obtained in Synthesis Example 24A The reaction was carried out in the same manner as in Synthesis Example 23-1 except that the formula (E-R2-XBisN-1) was used to obtain 28.4 g of a brown solid resin represented by (SE-R2-XBisN-1). rice field.

The resulting resin (SE-R2-XBisN-1) had Mn: 2676, Mw: 4730 and Mw/Mn: 1.77.

<Comparative Synthesis Example 1>
A 10 L four-necked flask capable of bottom extraction, equipped with a Dimroth condenser, a thermometer and a stirring blade was prepared. In this four-necked flask, 1.09 kg of 1,5-dimethylnaphthalene (7 mol, manufactured by Mitsubishi Gas Chemical Co., Ltd.), 2.1 kg of 40 mass% formalin aqueous solution (28 mol as formaldehyde, Mitsubishi Gas Chemical Co., Ltd.) ) and 0.97 ml of 98% by mass sulfuric acid (manufactured by Kanto Kagaku Co., Ltd.) were added and reacted for 7 hours under normal pressure at 100° C. under reflux. After that, 1.8 kg of ethylbenzene (special reagent grade manufactured by Wako Pure Chemical Industries, Ltd.) was added as a diluting solvent to the reaction solution, and after standing, the lower aqueous phase was removed. Furthermore, neutralization and washing with water were carried out, and ethylbenzene and unreacted 1,5-dimethylnaphthalene were distilled off under reduced pressure to obtain 1.25 kg of light brown solid dimethylnaphthalene formaldehyde resin.
The obtained dimethylnaphthalene formaldehyde had a molecular weight of Mn: 562.

Subsequently, a four-necked flask with an internal volume of 0.5 L equipped with a Dimroth condenser, a thermometer and a stirring blade was prepared. In this four-necked flask, 100 g (0.51 mol) of the dimethylnaphthalene formaldehyde resin obtained as described above and 0.05 g of p-toluenesulfonic acid were charged under a nitrogen stream, and the temperature was raised to 190 ° C. After heating for 1 hour, it was stirred. After that, 52.0 g (0.36 mol) of 1-naphthol was further added, and the mixture was further heated to 220° C. and reacted for 2 hours. After dilution with the solvent, neutralization and washing were carried out, and the solvent was removed under reduced pressure to obtain 126.1 g of modified resin (CR-1) as a dark brown solid.
The resulting resin (CR-1) had Mn: 885, Mw: 2220, and Mw/Mn: 4.17.

[Examples 1-1 to 24-2, Comparative Example 1]
Solubility tests were conducted using the compounds or resins described in Synthesis Examples 1-1 to 24-2 and CR-1 described in Synthesis Comparative Example 1. Table 8 shows the results.
In addition, underlayer film-forming materials for lithography having compositions shown in Table 8 below were prepared. Next, these underlayer film-forming materials for lithography were spin-coated on a silicon substrate, and then baked at 240° C. for 60 seconds and further at 400° C. for 120 seconds to prepare underlayer films each having a thickness of 200 nm. The following acid generators, cross-linking agents and organic solvents were used.

[Examples 25 to 44]
・Acid generator: Ditert-butyldiphenyliodonium nonafluoromethanesulfonate (DTDPI) manufactured by Midori Chemical Co., Ltd.
・Cross-linking agent: Nikalac MX270 (Nikalac) manufactured by Sanwa Chemical Co., Ltd.
Organic solvent: propylene glycol monomethyl ether acetate (PGMEA)
・ Novolak: PSM4357 manufactured by Gunei Chemical Co., Ltd.

In addition, underlayer film-forming materials for lithography having compositions shown in Table 9 below were prepared. Next, these underlayer film-forming materials for lithography were spin-coated on a silicon substrate, and then baked at 110° C. for 60 seconds to remove the solvent from the coating film. /cm ² and an irradiation time of 20 seconds to prepare an underlayer film having a thickness of 200 nm. The following photoacid generators, cross-linking agents and organic solvents were used.

- Radical polymerization initiator: IRGACURE184 manufactured by BASF
・Crosslinking agent:
Mitsubishi Gas Chemical diallyl bisphenol A type cyanate (DABPA-CN)
Diallyl bisphenol A (BPA-CA) manufactured by Konishi Chemical Industry
Benzoxazine (BF-BXZ) manufactured by Konishi Chemical Industry
Nippon Kayaku biphenyl aralkyl type epoxy resin (NC-3000-L)
・Organic solvent:
Propylene Glycol Monomethyl Ether Acetate (PGMEA)

The structure of the cross-linking agent is shown by the following formula.

[Evaluation of etching resistance]
An etching test was performed under the conditions shown below to evaluate the etching resistance. Evaluation results are shown in Tables 8 and 9.

(Etching test conditions)
Etching device: "RIE-10NR" manufactured by Samco International
Output: 50W
Pressure: 20Pa
Time: 2min
Etching gas Ar gas flow rate: _CF4 gas flow rate: _O2 gas flow rate = 50:5:5 (sccm)

Etching resistance was evaluated by the following procedure.
First, a novolac underlayer film was produced under the same conditions as in Example 1, except that novolac (“PSM4357” manufactured by Gunei Chemical Co., Ltd.) was used instead of the compound (SXBisN-1) used in Example 1-1. bottom. Then, the etching test described above was performed on this novolac underlayer film, and the etching rate at that time was measured.

Next, the above-described etching test was similarly performed on the lower layer films of each example and comparative example, and the etching rate at that time was measured.
Using the etching rate of the novolac underlayer film as a reference, the etching resistance was evaluated according to the following evaluation criteria.

[Evaluation criteria]
A: The etching rate is less than −10% compared to the novolac underlayer film B: The etching rate is −10% to +5% compared to the novolak underlayer film
C: The etching rate is more than +5% compared to the novolak underlayer film

As is clear from Tables 8 and 9, it was confirmed that the examples using the underlayer-forming material containing the compound of the present embodiment were excellent in terms of both solubility and etching resistance. On the other hand, in Comparative Example 1 using CR-1 (phenol-modified dimethylnaphthalene formaldehyde resin), the etching resistance was poor.
In addition, as described above, the compounds of Examples were excellent in heat resistance.

[Examples 45-48]
Next, each solution of an underlayer film forming material for lithography containing SXBisN-1, SE-XBisN-1, SBisF-1 or SE-BisF-1 was applied onto a 300 nm thick _SiO2 substrate, By baking at 240° C. for 60 seconds and then at 400° C. for 120 seconds, an underlayer film with a film thickness of 70 nm was formed. A photoresist solution having a film thickness of 140 nm was formed on the underlayer film by applying an arf resist solution and baking at 130° C. for 60 seconds. As the arf resist solution, a compound of the following formula (11): 5 parts by mass, triphenylsulfonium nonafluoromethanesulfonate: 1 part by mass, tributylamine: 2 parts by mass, and PGMEA: 92 parts by mass were blended. The prepared one was used.

A compound of the following formula (11) was prepared as follows. First, 4.15 g of 2-methyl-2-methacryloyloxyadamantane, 3.00 g of methacryloyloxy-γ-butyrolactone, 2.08 g of 3-hydroxy-1-adamantyl methacrylate, and 0.38 g of azobisisobutyronitrile were added to tetrahydrofuran. It was dissolved in 80 ml to prepare a reaction solution. This reaction solution was polymerized for 22 hours while maintaining the reaction temperature at 63° C. under a nitrogen atmosphere, and then added dropwise to 400 ml of n-hexane. The produced resin thus obtained was coagulated and purified, and the produced white powder was filtered and dried under reduced pressure at 40° C. overnight.

（１１）

(11)

In the above formula (11), "40", "40", and "20" indicate the ratio of each structural unit, not the block copolymer.

Next, using an electron beam lithography system (Elionix; ELS-7500, 50 kev), the photoresist layer is exposed, baked (PEB) at 115 ° C. for 90 seconds, and 2.38% by mass of tetramethylammonium hydroxide ( A positive resist pattern was obtained by developing with an aqueous TMAH) solution for 60 seconds.

The shapes of the resulting 55 nml/S (1:1) and 80 nml/S (1:1) resist patterns were observed using an electron microscope (S-4800, manufactured by Hitachi, Ltd.). With respect to the shape of the resist pattern after development, a pattern with good rectangularity without pattern collapse was evaluated as "good", and other than that was evaluated as "bad". As a result of the observation, the minimum line width with good rectangularity without pattern collapse was taken as the evaluation index as "resolution". Furthermore, the minimum electron beam energy amount capable of drawing a good pattern shape was defined as "sensitivity" and used as an evaluation index. The results are shown in Table 10.

[Comparative Example 2]
A photoresist layer was formed directly on the _SiO2 substrate in the same manner as in Example 45, except that no underlayer film was formed, to obtain a positive resist pattern. Table 10 shows the results.

As is clear from Table 10, in the examples using the lower layer forming material containing the compound of the present embodiment, it was confirmed that the resist pattern shape after development was good and no defect was observed. It was confirmed that both resolution and sensitivity were significantly superior to Comparative Example 2 in which the formation of the underlayer film was omitted.
From the difference in resist pattern shape after development, it was shown that the underlayer film-forming materials for lithography used in Examples 45 to 48 had good adhesion to the resist material.

[Examples 49-52]
The solutions of the underlayer film-forming materials for lithography of Examples 1-1 and 2-2 were coated on a 300 nm-thick _SiO2 substrate and baked at 240° C. for 60 seconds and then at 400° C. for 120 seconds to form films. An underlayer film having a thickness of 80 nm was formed. A silicon-containing intermediate layer material was applied onto the underlayer film and baked at 200° C. for 60 seconds to form an intermediate layer film having a thickness of 35 nm. Further, the arf resist solution was applied onto the intermediate layer film and baked at 130° C. for 60 seconds to form a photoresist layer with a film thickness of 150 nm. As the silicon-containing intermediate layer material, a silicon atom-containing polymer described in <Synthesis Example 1> of JP-A-2007-226170 was used.

Next, using an electron beam lithography system (Elionix; ELS-7500, 50 kev), the photoresist layer was mask-exposed, baked (PEB) at 115° C. for 90 seconds, and coated with 2.38% by mass of tetramethylammonium hydroxide. A positive resist pattern of 55 nml/S (1:1) was obtained by developing with a (TMAH) aqueous solution for 60 seconds.
After that, using RIE-10NR manufactured by Samco International, the silicon-containing intermediate layer film (SOG) was dry-etched using the obtained resist pattern as a mask, and then the obtained silicon-containing intermediate layer film pattern was removed. Dry etching processing of the lower layer film using the mask and dry etching processing of the _SiO2 film using the obtained lower layer film pattern as a mask were sequentially performed.

Each etching condition is as shown below.
(Etching conditions for resist intermediate layer film of resist pattern)
Output: 50W
Pressure: 20Pa
Time: 1 minute
Etching gas Ar gas flow rate: _CF4 gas flow rate: _O2 gas flow rate = 50:8:2 (sccm)

(Conditions for etching the resist intermediate film pattern to the resist underlayer film)
Output: 50W
Pressure: 20Pa
Time: 2min
Etching gas Ar gas flow rate: _CF4 gas flow rate: _O2 gas flow rate = 50:5:5 (sccm)

(Etching conditions for SiO ₂ film of resist underlayer film pattern)
Output: 50W
Pressure: 20Pa
Time: 2min
Etching gas Ar gas _flow rate: _C5F12 gas flow rate: _C2F6 gas flow rate _{: O2} gas flow rate = 50:4:3:1 (sccm)

[evaluation]
When the cross section of the pattern obtained as described above (the shape of the SiO ₂ film after etching) was observed using an electron microscope (S-4800) manufactured by Hitachi, Ltd., the underlayer film of the present embodiment was used. It was confirmed that, in the example, the shape of the SiO ₂ film after etching in the multi-layer resist processing was rectangular, and no defects were observed.

[Examples 53-56]
Using the compounds synthesized in the Synthesis Examples, optical component-forming compositions were prepared according to the formulations shown in Table 11 below. Of the components of the optical component-forming composition shown in Table 11, the following acid generators, cross-linking agents, acid diffusion inhibitors, and solvents were used.
・Acid generator: Ditert-butyldiphenyliodonium nonafluoromethanesulfonate (DTDPI) manufactured by Midori Chemical Co., Ltd.
・Cross-linking agent: Nikalac MX270 (Nikalac) manufactured by Sanwa Chemical Co., Ltd.
Organic solvent: propylene glycol monomethyl ether acetate (PGMEA)
A uniform optical component-forming composition was spin-coated on a clean silicon wafer and prebaked (PB) in an oven at 110° C. to form an optical component-forming film having a thickness of 1 μm. The prepared optical component-forming composition was evaluated as "A" when film formation was good, and as "C" when the formed film had defects.

A uniform optical component-forming composition was spin-coated on a clean silicon wafer and then PBed in an oven at 110° C. to form a film with a thickness of 1 μm. The refractive index (λ=589.3 nm) at 25° C. of the film was measured with a multi-incidence angle spectroscopic ellipsometer VASE manufactured by JA Woollam. The prepared film was evaluated as "A" when the refractive index was 1.65 or more, "B" when it was 1.6 or more and less than 1.65, and "C" when it was less than 1.6. . Also, when the transparency (λ=632.8 nm) was 90% or more, it was evaluated as "A", and when it was less than 90%, it was evaluated as "C".

[Examples 57-60]
Using the compounds synthesized in the Synthesis Examples and Synthesis Examples, resist compositions were prepared according to the formulations shown in Table 12 below. Among the components of the resist composition shown in Table 12, the following radical generators, radical diffusion inhibitors, and solvents were used.
- Radical polymerization initiator: IRGACURE184 manufactured by BASF
・Radical diffusion control agent: IRGACURE1010 manufactured by BASF
Organic solvent: propylene glycol monomethyl ether acetate (PGMEA)

[Evaluation method]
(1) Storage stability and thin film formation of the resist composition The storage stability of the resist composition was evaluated by standing at 23 ° C. and 50% RH for 3 days after preparing the resist composition, and visually checking for the presence or absence of precipitation. It was evaluated by observation. The resist composition after standing still for 3 days was evaluated as A when it was a uniform solution and no precipitation, and as C when there was precipitation. Also, a uniform resist composition was spin-coated on a clean silicon wafer, and then pre-exposure baked (PB) in an oven at 110° C. to form a resist film with a thickness of 40 nm. The prepared resist composition was evaluated as A when the thin film was formed well, and as C when the formed film had defects.

(2) Pattern Evaluation of Resist Pattern A uniform resist composition was spin-coated on a clean silicon wafer, and then pre-exposure baked (PB) in an oven at 110° C. to form a resist film with a thickness of 60 nm. The resulting resist film was irradiated with electron beams set at 1:1 line-and-space intervals of 50 nm, 40 nm, and 30 nm using an electron beam lithography system (ELS-7500, manufactured by Elionix Co., Ltd.). . After the irradiation, each resist film was heated at a predetermined temperature for 90 seconds and immersed in PGME for 60 seconds for development. Thereafter, the resist film was washed with ultrapure water for 30 seconds and dried to form a negative resist pattern. The lines and spaces of the formed resist pattern were observed with a scanning electron microscope (S-4800, manufactured by Hitachi High Technology Co., Ltd.) to evaluate the reactivity of the resist composition to electron beam irradiation.
The sensitivity was indicated by the minimum amount of energy required per unit area to obtain a pattern and was evaluated according to the following.
A: When a pattern is obtained at less than 50 μC/cm 2 C: When a pattern is obtained at 50 μC/cm 2 or more For pattern formation, the obtained pattern shape is observed with a SEM (Scanning Electron Microscope). and evaluated according to the following.
A: When a rectangular pattern is obtained B: When an almost rectangular pattern is obtained C: When a non-rectangular pattern is obtained

As described above, the present invention is not limited to the above embodiments and examples, and can be modified as appropriate without departing from the scope of the invention.

The compound and resin of the present embodiment have high solubility in a safe solvent, good heat resistance and etching resistance, and the resist composition gives a good resist pattern shape.
In addition, it is possible to realize a compound, a resin, and a film-forming composition for lithography that are applicable to a wet process and are useful for forming a photoresist underlayer film having excellent heat resistance and etching resistance. Further, since this film-forming composition for lithography uses a compound or resin having a specific structure, which has high heat resistance and high solvent solubility, deterioration of the film during high-temperature baking is suppressed, and oxygen plasma etching or the like is performed. It is possible to form a resist and an underlayer film that are also excellent in etching resistance to. Furthermore, when an underlayer film is formed, the adhesiveness to the resist layer is also excellent, so an excellent resist pattern can be formed.
Furthermore, it is useful as a composition for forming various optical parts because it has a high refractive index and can be prevented from being colored by low-temperature to high-temperature treatment.

Therefore, the present invention provides, for example, electrical insulating materials, resist resins, semiconductor sealing resins, printed wiring board adhesives, electrical laminates mounted in electrical equipment, electronic equipment, industrial equipment, etc., electrical equipment・Prepreg matrix resin, build-up laminate material, fiber-reinforced plastic resin, sealing resin for liquid crystal display panels, paints, various coating agents, adhesives, coatings for semiconductors, etc., which are mounted on electronic equipment and industrial equipment In addition to being used in resins for resists for semiconductors, resins for forming underlayer films, films and sheets, and plastic lenses (prism lenses, lenticular lenses, microlenses, Fresnel lenses, viewing angle control lenses, contrast enhancement lenses, etc.) , retardation film, electromagnetic wave shielding film, prism, optical fiber, solder resist for flexible printed wiring, plating resist, interlayer insulating film for multilayer printed wiring board, optical parts such as photosensitive optical waveguide, etc. is.
In particular, the present invention can be effectively used in the fields of resists for lithography, underlayer films for lithography, underlayer films for multilayer resists, and optical components.

The disclosure of Japanese Patent Application No. 2016-143622 filed on July 21, 2016 is incorporated herein by reference in its entirety.
In addition, all publications, patent applications and technical standards mentioned in the specification shall be referred to to the same extent as if each individual publication, patent application or technical standard were specifically and individually noted to be incorporated by reference. , incorporated herein by reference.

Claims (6)

A compound represented by the following formula (5).

Formula (5)
(In formula (5), R ^5A is an N ^B -valent group having 1 to 60 carbon atoms (excluding an unsubstituted phenyl group) or a single bond,
m ¹⁰ is each independently an integer of 2 to 3,
^NB is an integer of 1 to 4, and when ^NB is an integer of 2 or more, ^NB structural formulas in [] may be the same or different, and the formula (5 ) in each benzene structure, m ¹⁰ OH is bonded to at least two positions selected from the ortho-position, meta-position, and para-position of the benzene structure. provided that when N ^B =1, R ^5A is an optionally substituted biphenyl group, an optionally substituted naphthyl group, an optionally substituted anthracene group, or , is a phenanthracene group which may have a substituent, and when N ^B =2, R ^5A is a divalent biphenyl group which may have a substituent, a divalent divalent group which may have a substituent a naphthalene group, an optionally substituted divalent anthracene group, or an optionally substituted divalent phenanthracene group , and when NB ^is 3 or 4, R ^5A is a phenyl group having a substituent. ) 2. The compound according to claim 1 , wherein in formula (5), when N ^B is 3 or 4, R ^5A is an optionally substituted biphenyl group. 3. The compound according to claim 2 , wherein in formula (5), when N ^B is 3 or 4, R ^5A is an unsubstituted biphenyl group. 3. The compound according to claim 1 , wherein at least one of said substituents in said formula (5) contains a group selected from an alkyl group, a cycloalkyl group and a hydroxyl group. 3. The compound according to claim 1 or 2 , wherein in the formula (5), the substituent is a group selected from an alkyl group, a cycloalkyl group and a hydroxyl group. 2. The compound according to claim 1, wherein the compound represented by formula (5) is any one of the following.

(Wherein, R ^1A' is an optionally substituted biphenyl group, an optionally substituted naphthyl group, an optionally substituted anthracene group, or a substituted indicates a phenanthracene group that may be

(Wherein, R ¹⁶ is a divalent biphenyl group having a substituent, a divalent naphthalene group optionally having a substituent, a divalent anthracene group optionally having a substituent, or It is a divalent phenanthracene group which may have a substituent.)