JP7145415B2 - Compound, resin, composition, pattern forming method and purification method - Google Patents

Description

TECHNICAL FIELD The present invention relates to a compound having a specific structure, a resin, a composition containing these, a pattern forming method using the composition, and a purification method of a substance.

In the manufacture of semiconductor devices, microfabrication is performed by lithography using a photoresist material. However, in recent years, with the increase in the integration density and speed of LSIs, there is a demand for further miniaturization based on pattern rules. Lithography using light exposure, which is currently used as a general-purpose technique, is approaching the essential limit of resolution due to the wavelength of the light source.

The light source for lithography used for resist pattern formation has been shortened from KrF excimer laser (248 nm) to ArF excimer laser (193 nm). However, as the resist pattern becomes finer and finer, a resolution problem or a problem that the resist pattern collapses after development occurs. Merely thinning the resist to meet such a demand makes it difficult to obtain a resist pattern having a film thickness sufficient for substrate processing. Therefore, in addition to the resist pattern, there is a need for a process in which a resist underlayer film is formed between the resist and the semiconductor substrate to be processed, and this resist underlayer film also functions as a mask during substrate processing.

At present, various types of resist underlayer films are known for such processes. For example, unlike a conventional resist underlayer film having a high etching rate, a resist underlayer film for lithography having a dry etching rate selectivity close to that of a resist can be mentioned. A material for forming such a resist underlayer film for lithography contains a solvent and a resin component having at least a substituent that produces a sulfonic acid residue by elimination of the terminal group upon application of a predetermined energy. Underlayer film-forming materials for multilayer resist processes have been proposed (see, for example, Patent Document 1). In addition, a resist underlayer film for lithography having a dry etching rate selectivity ratio smaller than that of a resist can also be used. As a material for forming such a resist underlayer film for lithography, a resist underlayer film material containing a polymer having a specific repeating unit has been proposed (see, for example, Patent Document 2). Furthermore, a resist underlayer film for lithography having a dry etching rate selectivity ratio smaller than that of a semiconductor substrate can also be used. As a material for forming such a resist underlayer film for lithography, a resist underlayer film material containing a polymer obtained by copolymerizing a repeating unit of acenaphthylene and a repeating unit having a substituted or unsubstituted hydroxy group is available. It has been proposed (see, for example, Patent Document 3).

On the other hand, as a material having high etching resistance in this type of resist underlayer film, chemical vapor deposition (hereinafter also referred to as "CVD") using methane gas, ethane gas, acetylene gas, etc. as raw materials Formed amorphous carbon underlayer films are well known. However, from the viewpoint of process, there is a demand for a resist underlayer film material that can form a resist underlayer film by a wet process such as spin coating or screen printing.

In recent years, there has been a demand for the formation of resist underlayer films for lithography on layers to be processed with complex shapes, and there has been a demand for resist underlayer film materials that can form underlayer films with excellent filling properties and flattening of the film surface. there is

Regarding the method of forming the intermediate layer used in the formation of the resist underlayer film in the three-layer process, for example, a method of forming a silicon nitride film (see, for example, Patent Document 4) and a method of forming a silicon nitride film by CVD (see, for example, , see Patent Document 5). In addition, materials containing silsesquioxane-based silicon compounds are known as intermediate layer materials for three-layer processes (see, for example, Patent Documents 6 and 7).

The present inventors have proposed an underlayer film-forming composition for lithography containing a specific compound or resin (see, for example, Patent Document 8).

Various optical component-forming compositions have also been proposed. Reference 11) has been proposed.

JP-A-2004-177668 JP 2004-271838 A JP-A-2005-250434 JP-A-2002-334869 WO2004/066377 Japanese Patent Application Laid-Open No. 2007-226170 JP 2007-226204 A WO2013/024779 JP 2010-138393 A JP 2015-174877 A WO2014/123005

As mentioned above, many underlayer film forming materials for lithography have been proposed in the past. There is no such thing as a new material, and the development of a new material is required.

In addition, although many compositions for optical members have been proposed so far, there is no composition that satisfies both heat resistance, transparency and refractive index at a high level, and the development of new materials is desired.

The present invention has been made in view of the above problems. That is, an object of the present invention is to provide a compound, a resin, and a composition that are useful for forming a lithography film that has excellent solvent solubility, can be applied to wet processes, and has excellent heat resistance and etching resistance. Another object of the present invention is to provide a pattern forming method using the composition.

The present inventors have made intensive studies to solve the above problems, and as a result, have found that the above problems can be solved by using a compound having a specific structure, and have completed the present invention.

（式（Ａ）中、Ｒ^Ｙは、水素原子、炭素数１～３０の直鎖状、分岐状若しくは環状のアルキル基又は炭素数６～３０のアリール基であり、
Ｒ^Ｚは、炭素数３～３０の環状アルキル基を含む炭素数３～６０のｍ価の基であり、
Ｒ^Ｔは、各々独立して、置換基を有していてもよい炭素数１～３０の直鎖状、分岐状若しくは環状のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボキシル基、チオール基、水酸基の水素原子が酸解離性基で置換された基又は水酸基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合又はエステル結合を含んでいてもよく、
ここで、Ｒ^Ｔの少なくとも１つは水酸基であり、
ｎは、各々独立して、０～８の整数であり、ここで、ｎの少なくとも１つは１～８の整数であり、
ｍは、１～４の整数であり、
ｋは、各々独立して、０～２の整数である。）
［２］前記式（Ａ）で表される化合物が、下記式（１）で表される化合物である、前記［１］に記載の化合物。

（式（１）中、Ｒ^Ｙ、Ｒ^Ｚ、ｍ及びｋは、上記式（Ａ）で説明したものと同義である。
Ｒ^３Ａは、各々独立して、置換基を有していてもよい炭素数１～３０の直鎖状、分岐状若しくは環状のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボキシル基又はチオール基であり、
Ｒ^４Ａは、各々独立して、水素原子又は酸解離性基であり、
ここで、Ｒ^４Ａの少なくとも１つは水素原子であり、
ｍ^６Ａは、各々独立して、０～７の整数である。）
［３］前記式（１）で表される化合物が、下記式（１’）で表される化合物である、前記［２］に記載の化合物。

（式（１’）中、Ｒ^Ｚは、前記式（Ａ）で説明したものと同義である。）
［４］前記式（１’）で表される化合物が、下記式（２）で表される化合物である、前記［３］に記載の化合物。

［５］前記式（２）で表される化合物が、下記式（２－１）又は式（２－２）で表される化合物である、前記［４］に記載の化合物。

［６］前記［１］～［５］のいずれか１項に記載の化合物に由来する構成単位を有する、樹脂。
［７］前記［１］～［５］のいずれか１項に記載の化合物及び前記［６］に記載の樹脂からなる群より選ばれる１種類以上を含有する、組成物。
［８］前記［１］～［５］のいずれか１項に記載の化合物及び前記［６］に記載の樹脂からなる群より選ばれる１種類以上を含有する、光学部品形成用組成物。
［９］前記［１］～［５］のいずれか１項に記載の化合物及び前記［６］に記載の樹脂からなる群より選ばれる１種類以上を含有する、リソグラフィー用膜形成組成物。
［１０］前記［１］～［５］のいずれか１項に記載の化合物及び前記［６］に記載の樹脂からなる群より選ばれる１種類以上を含有する、レジスト組成物。
［１１］溶媒をさらに含有する、前記［１０］に記載のレジスト組成物。
［１２］酸発生剤をさらに含有する、前記［１０］又は［１１］に記載のレジスト組成物。
［１３］酸拡散制御剤をさらに含有する、前記［１０］～［１２］のいずれか１項に記載のレジスト組成物。
［１４］前記［１０］～［１３］のいずれか１項に記載のレジスト組成物を用いて、基板上にレジスト膜を形成する工程と、
形成された前記レジスト膜の少なくとも一部を露光する工程と、
露光した前記レジスト膜を現像してレジストパターンを形成する工程と、を含む、レジストパターン形成方法。
［１５］前記［１］～［５］のいずれか１項に記載の化合物及び前記［６］に記載の樹脂からなる群より選ばれる１種類以上である成分（Ａ）と、
ジアゾナフトキノン光活性化合物（Ｂ）と、
溶媒と、を含有する感放射線性組成物であって、
前記溶媒の含有量が、前記感放射線性組成物の総量１００質量％に対して２０～９９質量％であり、
前記溶媒以外の成分の含有量が、前記感放射線性組成物の総量１００質量％に対して１～８０質量％である、感放射線性組成物。
［１６］前記成分（Ａ）と、前記ジアゾナフトキノン光活性化合物（Ｂ）と、前記感放射線性組成物に任意に含まれ得るその他の任意成分（Ｄ）と、の含有量比（（Ａ）／（Ｂ）／（Ｄ））が、前記感放射線性組成物の固形分１００質量％に対して、１～９９質量％／９９～１質量％／０～９８質量％である、前記［１５］に記載の感放射線性組成物。
［１７］スピンコートによりアモルファス膜を形成することができる、前記［１５］又は［１６］に記載の感放射線性組成物。
［１８］前記［１５］～［１７］のいずれか１項に記載の感放射線性組成物を用いて、基板上にアモルファス膜を形成する工程を含む、アモルファス膜の製造方法。
［１９］前記［１５］～［１７］のいずれか１項に記載の感放射線性組成物を用いて、基板上にレジスト膜を形成する工程と、
形成された前記レジスト膜の少なくとも一部を露光する工程と、
露光した前記レジスト膜を現像して、レジストパターンを形成する工程を含む、レジストパターン形成方法。
［２０］前記［１］～［５］のいずれか１項に記載の化合物及び前記［６］に記載の樹脂からなる群より選ばれる１種類以上を含有する、リソグラフィー用下層膜形成材料。
［２１］前記［２０］に記載のリソグラフィー用下層膜形成材料と、
溶媒と、を含有する、リソグラフィー用下層膜形成用組成物。
［２２］酸発生剤をさらに含有する、前記［２１］に記載のリソグラフィー用下層膜形成用組成物。
［２３］架橋剤をさらに含有する、前記［２１］又は［２２］に記載のリソグラフィー用下層膜形成用組成物。
［２４］前記［２１］～［２３］のいずれか１項に記載のリソグラフィー用下層膜形成用組成物を用いて、基板上に下層膜を形成する工程を含む、リソグラフィー用下層膜の製造方法。
［２５］前記［２１］～［２３］のいずれか１項に記載のリソグラフィー用下層膜形成用組成物を用いて、基板上に、下層膜を形成する工程と、
前記下層膜上に、少なくとも１層のフォトレジスト層を形成する工程と、
前記フォトレジスト層の所定の領域に放射線を照射し、現像してレジストパターンを形成する工程と、を有する、レジストパターン形成方法。
［２６］前記［２１］～［２３］のいずれか１項に記載のリソグラフィー用下層膜形成用組成物を用いて、基板上に下層膜を形成する工程と、
前記下層膜上に、珪素原子を含有するレジスト中間層膜材料を用いて中間層膜を形成する工程と、
前記中間層膜上に、少なくとも１層のフォトレジスト層を形成する工程と、
前記フォトレジスト層の所定の領域に放射線を照射し、現像してレジストパターンを形成する工程と、
前記レジストパターンをマスクとして前記中間層膜をエッチングして、中間層膜パターンを形成する工程と、
前記中間層膜パターンをエッチングマスクとして前記下層膜をエッチングして、下層膜パターンを形成する工程と、
前記下層膜パターンをエッチングマスクとして前記基板をエッチングして、前記基板にパターンを形成する工程と、を有する、回路パターン形成方法。
［２７］前記［１］～［５］のいずれか１項に記載の化合物及び前記［６］に記載の樹脂からなる群より選ばれる１種類以上を、溶媒に溶解させて溶液（Ｓ）を得る工程と、
得られた溶液（Ｓ）と酸性の水溶液とを接触させて、前記化合物及び／又は前記樹脂中の不純物を抽出する第一抽出工程とを含み、
前記溶液（Ｓ）を得る工程で用いる溶媒が、水と混和しない溶媒を含む、精製方法。
［２８］前記酸性の水溶液が、鉱酸水溶液又は有機酸水溶液であり、
前記鉱酸水溶液が、塩酸、硫酸、硝酸及びリン酸からなる群より選ばれる１種以上を水に溶解させた鉱酸水溶液であり、
前記有機酸水溶液が、酢酸、プロピオン酸、蓚酸、マロン酸、コハク酸、フマル酸、マレイン酸、酒石酸、クエン酸、メタンスルホン酸、フェノールスルホン酸、ｐ－トルエンスルホン酸及びトリフルオロ酢酸からなる群より選ばれる１種以上を水に溶解させた有機酸水溶液である、前記［２７］に記載の精製方法。
［２９］前記水と混和しない溶媒が、トルエン、２－ヘプタノン、シクロヘキサノン、シクロペンタノン、メチルイソブチルケトン、プロピレングリコールモノメチルエーテルアセテート及び酢酸エチルからなる群より選ばれる１種以上の溶媒である、前記［２７］又は［２８］に記載の精製方法。
［３０］前記第一抽出工程後、前記化合物及び／又は前記樹脂を含む溶液相を、さらに水に接触させて、前記化合物及び／又は前記樹脂中の不純物を抽出する第二抽出工程含む、前記［２７］～［２９］のいずれか１項に記載の精製方法。That is, the present invention is as follows.
[1] A compound represented by the following formula (A).

(In formula (A), R ^Y is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms,
R ^Z is an m-valent group having 3 to 60 carbon atoms including a cyclic alkyl group having 3 to 30 carbon atoms,
Each R ^T is independently an optionally substituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an optionally substituted carbon number of 6 to 30. aryl group, an alkenyl group having 2 to 30 carbon atoms which may have a substituent, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxyl group, a thiol group, a group in which the hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, or a hydroxyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ether bonds, ketone bonds, or ester bonds. may contain
wherein at least one of R ^T is a hydroxyl group;
each n is independently an integer from 0 to 8, wherein at least one of n is an integer from 1 to 8;
m is an integer from 1 to 4,
k is each independently an integer of 0 to 2; )
[2] The compound according to [1] above, wherein the compound represented by formula (A) is a compound represented by formula (1) below.

(In Formula (1), R ^Y , R ^Z , m and k have the same meanings as those described in Formula (A) above.
Each R ^3A is independently an optionally substituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an optionally substituted carbon number of 6 to 30 an aryl group, an alkenyl group having 2 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxyl group or a thiol group,
each R ^4A is independently a hydrogen atom or an acid-labile group,
wherein at least one of R ^4A is a hydrogen atom;
Each ^m6A is independently an integer of 0-7. )
[3] The compound according to [2] above, wherein the compound represented by the formula (1) is a compound represented by the following formula (1′).

(In formula (1′), R ^Z has the same definition as in formula (A) above.)
[4] The compound according to [3] above, wherein the compound represented by the formula (1′) is a compound represented by the following formula (2).

[5] The compound according to [4] above, wherein the compound represented by the formula (2) is a compound represented by the following formula (2-1) or (2-2).

[6] A resin having a structural unit derived from the compound according to any one of [1] to [5] above.
[7] A composition containing one or more selected from the group consisting of the compound according to any one of [1] to [5] and the resin according to [6].
[8] A composition for forming an optical part, containing one or more selected from the group consisting of the compound according to any one of [1] to [5] above and the resin according to [6] above.
[9] A film-forming composition for lithography, containing one or more selected from the group consisting of the compound described in any one of [1] to [5] above and the resin described in [6] above.
[10] A resist composition containing one or more selected from the group consisting of the compound according to any one of [1] to [5] and the resin according to [6].
[11] The resist composition according to [10] above, further containing a solvent.
[12] The resist composition according to the above [10] or [11], further containing an acid generator.
[13] The resist composition according to any one of [10] to [12], further comprising an acid diffusion controller.
[14] forming a resist film on a substrate using the resist composition according to any one of [10] to [13];
exposing at least part of the formed resist film;
and developing the exposed resist film to form a resist pattern.
[15] A component (A) which is one or more selected from the group consisting of the compound according to any one of [1] to [5] and the resin according to [6];
a diazonaphthoquinone photoactive compound (B);
A radiation-sensitive composition containing a solvent,
The content of the solvent is 20 to 99% by mass with respect to the total amount of 100% by mass of the radiation-sensitive composition,
A radiation-sensitive composition, wherein the content of components other than the solvent is 1 to 80% by mass with respect to 100% by mass of the total amount of the radiation-sensitive composition.
[16] Content ratio ((A) The [15 ] The radiation sensitive composition as described in .
[17] The radiation-sensitive composition according to the above [15] or [16], which can form an amorphous film by spin coating.
[18] A method for producing an amorphous film, comprising the step of forming an amorphous film on a substrate using the radiation-sensitive composition according to any one of [15] to [17].
[19] forming a resist film on a substrate using the radiation-sensitive composition according to any one of [15] to [17];
exposing at least part of the formed resist film;
A method of forming a resist pattern, comprising the step of developing the exposed resist film to form a resist pattern.
[20] An underlayer film-forming material for lithography, containing one or more selected from the group consisting of the compound described in any one of [1] to [5] above and the resin described in [6] above.
[21] The underlayer film-forming material for lithography according to [20] above;
A composition for forming an underlayer film for lithography, comprising a solvent.
[22] The composition for forming an underlayer film for lithography according to [21] above, further comprising an acid generator.
[23] The composition for forming an underlayer film for lithography according to the above [21] or [22], further comprising a cross-linking agent.
[24] A method for producing an underlayer film for lithography, comprising the step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography according to any one of [21] to [23] above. .
[25] A step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography according to any one of [21] to [23];
forming at least one photoresist layer on the underlayer film;
and a step of irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern.
[26] A step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography according to any one of [21] to [23];
forming an intermediate layer film on the underlayer film using a resist intermediate layer film material containing silicon atoms;
forming at least one photoresist layer on the intermediate layer film;
a step of irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern;
forming an intermediate layer film pattern by etching the intermediate layer film using the resist pattern as a mask;
forming an underlayer film pattern by etching the underlayer film using the intermediate layer film pattern as an etching mask;
and forming a pattern on the substrate by etching the substrate using the underlying film pattern as an etching mask.
[27] One or more selected from the group consisting of the compound described in any one of [1] to [5] and the resin described in [6] is dissolved in a solvent to form a solution (S). a process of obtaining
a first extraction step of contacting the obtained solution (S) with an acidic aqueous solution to extract impurities in the compound and/or the resin;
The purification method, wherein the solvent used in the step of obtaining the solution (S) contains a water-immiscible solvent.
[28] The acidic aqueous solution is a mineral acid aqueous solution or an organic acid aqueous solution,
The mineral acid aqueous solution is a mineral acid aqueous solution in which one or more selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid are dissolved in water,
The organic acid aqueous solution is the group consisting of acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid and trifluoroacetic acid. The purification method according to the above [27], which is an organic acid aqueous solution in which one or more selected from the above is dissolved in water.
[29] The water-immiscible solvent is one or more solvents selected from the group consisting of toluene, 2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate, and ethyl acetate. The purification method according to [27] or [28].
[30] After the first extraction step, the solution phase containing the compound and/or the resin is further brought into contact with water to extract impurities in the compound and/or the resin. [27] The purification method according to any one of [29].

INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide compounds, resins, and compositions that are useful for forming lithographic films that have excellent solvent solubility, can be applied to wet processes, and have excellent heat resistance and etching resistance.

Embodiments of the present invention (hereinafter, also simply referred to as "this embodiment") will be described below. In addition, the following embodiments are examples for explaining the present invention, and the present invention is not limited only to the embodiments.

（式（Ａ）中、Ｒ^Ｙは、水素原子、炭素数１～３０の直鎖状、分岐状若しくは環状のアルキル基又は炭素数６～３０のアリール基であり、
Ｒ^Ｚは、炭素数３～３０の環状アルキル基を含む炭素数３～６０のｍ価の基であり、
Ｒ^Ｔは、各々独立して、置換基を有していてもよい炭素数１～３０の直鎖状、分岐状若しくは環状のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、置換基を有していてもよい炭素数１～３０のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボキシル基、チオール基、水酸基の水素原子が酸解離性基で置換された基又は水酸基であり、前記アルキル基、前記アリール基、前記アルケニル基、前記アルコキシ基は、エーテル結合、ケトン結合又はエステル結合を含んでいてもよく、
ここで、Ｒ^Ｔの少なくとも１つは水酸基であり、
ｎは、各々独立して０～８の整数であり、ここで、ｎの少なくとも１つは１～８の整数であり、
ｍは、１～４の整数であり、
ｋは、各々独立して０～２の整数である。）[Compound represented by formula (A)]
The compound of this embodiment is a compound represented by the following formula (A).

(In formula (A), R ^Y is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms,
R ^Z is an m-valent group having 3 to 60 carbon atoms including a cyclic alkyl group having 3 to 30 carbon atoms,
Each R ^T is independently an optionally substituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an optionally substituted carbon number of 6 to 30. aryl group, an alkenyl group having 2 to 30 carbon atoms which may have a substituent, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxyl group, a thiol group, a group in which the hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, or a hydroxyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ether bonds, ketone bonds, or ester bonds. may contain
wherein at least one of R ^T is a hydroxyl group;
each n is independently an integer from 0 to 8, wherein at least one of n is an integer from 1 to 8;
m is an integer from 1 to 4,
k is each independently an integer of 0 to 2; )

R ^Z in the above formula (A) is an m-valent group having 3 to 60 carbon atoms including a cyclic alkyl group having 3 to 30 carbon atoms. The above m-valent group means a linear, branched or cyclic alkyl group having 3 to 60 carbon atoms which may have a substituent including a cyclic alkyl group having 3 to 30 carbon atoms, Having a linear, branched or cyclic alkylene group having 3 to 60 carbon atoms, optionally having a substituent containing a cyclic alkyl group of 30, or a substituent containing a cyclic alkyl group having 3 to 30 carbon atoms A linear, branched or cyclic alkanetriyl group having 3 to 60 carbon atoms which may be A monovalent aromatic group having 9 to 60 carbon atoms which may have a substituent including a linear, branched or cyclic alkanetetrayl group, a cyclic alkyl group having 3 to 30 carbon atoms, and 3 to 30 carbon atoms. A divalent aromatic group having 9 to 60 carbon atoms which may have a substituent containing a cyclic alkyl group of, a number of carbon atoms which may have a substituent containing a cyclic alkyl group having 3 to 30 carbon atoms It represents a trivalent aromatic group of 9 to 60 and a tetravalent aromatic group of 9 to 60 carbon atoms which may have substituents including 3 to 30 cyclic alkyl groups.
Here, the cyclic alkyl group containing a cyclic alkyl group having 3 to 30 carbon atoms also includes a bridged alicyclic alkyl group containing a cyclic alkyl group having 3 to 30 carbon atoms. In addition, the m-valent group may have a double bond, a heteroatom, or an aromatic group having 6 to 30 carbon atoms.
Reference to cyclic alkyl groups also includes bridged alicyclic alkyl groups.
The compound of the present embodiment has high heat resistance because R ^Z in the above formula (A) is an m-valent group having 3 to 60 carbon atoms containing a cyclic alkyl group having 3 to 30 carbon atoms as described above. Furthermore, it can provide a good resist pattern shape and is excellent in etching resistance.

As the m-valent group, from the viewpoint of flatness, a linear, branched or cyclic alkyl having 3 to 60 carbon atoms which may have a substituent including a cyclic alkyl group having 3 to 30 carbon atoms a linear, branched or cyclic alkylene group having 3 to 60 carbon atoms which may have a substituent containing a cyclic alkyl group having 3 to 30 carbon atoms, or a cyclic alkyl group having 3 to 30 carbon atoms. A monovalent aromatic group having 9 to 60 carbon atoms which may have a substituent containing a divalent aromatic group having 9 to 60 carbon atoms which may have a cyclic alkyl group having 3 to 30 carbon atoms. It is preferably a valent aromatic group.

The monovalent group having 3 to 60 carbon atoms which may have a substituent containing a cyclic alkyl group having 3 to 30 carbon atoms is not particularly limited, but examples thereof include a cyclopropyl group, a cyclobutyl group and a cyclopentyl group. , cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, cyclooctadecyl group, adamantyl group, cyclohexylphenyl group, cyclohexylnaphthyl group, methylcyclohexylphenyl group, ethylcyclohexylphenyl group, propylcyclohexylphenyl group, pentylcyclohexylphenyl group, cyclopropylmethyl group, cyclohexylmethyl group, adamantylmethyl group and the like.

The divalent group having 3 to 60 carbon atoms which may have a substituent containing a cyclic alkyl group having 3 to 30 carbon atoms is not particularly limited, but examples thereof include a cyclopropylene group, a cyclobutylene group, a cyclo pentylene group, cyclohexylene group, cycloheptylene group, cyclooctylene group, cyclononylene group, cyclodecylene group, cyclooctadecylene group, adamantylene group, cyclohexylphenylene group, cyclopropyldimethylene group, cyclohexyldimethylene group, adamantyldimethylene group and the like.

The trivalent group having 3 to 60 carbon atoms which may have a substituent containing a cyclic alkyl group having 3 to 30 carbon atoms is not particularly limited, but examples thereof include a cyclopropanetriyl group and a cyclobutanetriyl group. group, cyclopentanetriyl group, cyclohexanetriyl group, cycloheptanetriyl group, cyclooctanetriyl group, cyclononanetriyl group, cyclodecanetriyl group, cyclooctadecanetriyl group, cyclohexylbenzenetriyl group and the like. be done.

The tetravalent group having 3 to 60 carbon atoms which may have a substituent containing a cyclic alkyl group having 3 to 30 carbon atoms is not particularly limited, but examples thereof include a cyclopropanetetrayl group and a cyclobutanetetrayl group. group, cyclopentanetetrayl group, cyclohexanetetrayl group, cycloheptanetetrayl group, cyclooctanetetrayl group, cyclononanetetrayl group, cyclodecanetetrayl group, cyclooctadecanetetrayl group, cyclohexylbenzenetetrayl group, cyclo propanetetramethylene group, cyclohexanetetramethylene group, adamantanetetramethylene group, cyclohexylbenzenetetramethylene group, and the like.

Among these, a cyclohexylphenyl group, a propylcyclohexylphenyl group, a cyclohexylnaphthyl group, a bicyclohexyl group, and a cyclohexanedimethyl group are preferable from the viewpoint of heat resistance. Among these, a cyclohexylphenyl group is particularly preferred from the viewpoint of raw material availability.

R ^Y in the above formula (A) is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms or an aryl group having 6 to 30 carbon atoms.

Each R ^Y in the above formula (A) is independently a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms which may have a substituent. and the alkyl group and the aryl group may contain an ether bond, a ketone bond or an ester bond.

Each R 1 ^T in the above formula (A) is independently a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms which may have a substituent. , optionally substituted alkenyl groups having 2 to 30 carbon atoms, halogen atoms, nitro groups, amino groups, carboxyl groups, thiol groups, groups in which the hydrogen atoms of hydroxyl groups are substituted with acid-dissociable groups, and hydroxyl groups is a substituent selected from the group consisting of Here, at least one of ^RT is a hydroxyl group. Further, n is each independently an integer of 0 to 8, where at least one of n is an integer of 1 to 8, m is an integer of 1 to 4, k is each independently , and is an integer between 0 and 2.

As used herein, an acid-labile group refers to a characteristic group that is cleaved in the presence of an acid to produce a change such as an alkali-soluble group. Examples of alkali-soluble groups include phenolic hydroxyl groups, carboxyl groups, sulfonic acid groups, hexafluoroisopropanol groups, etc. Phenolic hydroxyl groups and carboxyl groups are preferred, and phenolic hydroxyl groups are particularly preferred. The acid-dissociable group can be appropriately selected from among those proposed for hydroxystyrene-based resins, (meth)acrylic acid-based resins and the like used in chemically amplified resist compositions for KrF and ArF. can. Although not limited, for example, an acid dissociable group described in JP-A-2012-136520 is used.

（式（１）中、Ｒ^Ｚ、Ｒ^Ｙ、ｍ及びｋは、前記式（Ａ）で説明したものと同義である。
Ｒ^３Ａは、各々独立して、置換基を有していてもよい炭素数１～３０の直鎖状、分岐状若しくは環状のアルキル基、置換基を有していてもよい炭素数６～３０のアリール基、置換基を有していてもよい炭素数２～３０のアルケニル基、ハロゲン原子、ニトロ基、アミノ基、カルボキシル基又はチオール基であり、
Ｒ^４Ａは、各々独立して、水素原子又は酸解離性基であり、
ここで、Ｒ^４Ａの少なくとも１つは水素原子であり、
ｍ^６Ａは、各々独立して、０～７の整数である。）Since the compound of the present embodiment has the structure as described above, it has high heat resistance and high solvent solubility. Moreover, the compound of the present embodiment is preferably a compound represented by the following formula (1) from the viewpoint of solubility in a solvent and heat resistance.

(In Formula (1), R ^Z , R ^Y , m and k have the same meanings as those described in Formula (A) above.
Each R ^3A is independently an optionally substituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an optionally substituted carbon number of 6 to 30 an aryl group, an alkenyl group having 2 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxyl group or a thiol group,
each R ^4A is independently a hydrogen atom or an acid-labile group,
wherein at least one of R ^4A is a hydrogen atom;
Each ^m6A is independently an integer of 0-7. )

（式（１’）中、Ｒ^Ｚは、前記式（Ａ）で説明したものと同義である。）Further, in terms of solubility in a solvent and heat resistance, in the present embodiment, the compound represented by the formula (1) is preferably a compound represented by the following formula (1').

(In formula (1′), R ^Z has the same definition as in formula (A) above.)

Furthermore, from the viewpoint of heat resistance and solubility in organic solvents, in the present embodiment, the compound represented by (1') is preferably a compound represented by the following formula (2).

Further, from the viewpoint of heat resistance and solubility in organic solvents, specific examples of the compound represented by the formula (2) in the present embodiment are shown below, but are not limited to those listed here. Further, it is preferably a compound represented by the following formula (2-1) or formula (2-2).

Specific examples of the compound represented by formula (A) are shown below, but the compound represented by formula (A) is not limited to the specific examples listed here.

In the above formula, R 1 ^T' has the same definition as R 1 ^T described in formula (A) above, and each m is independently an integer of 1 to 6.

In the above formula, R 1 ^T' has the same definition as R 1 ^T described in formula (A) above, and each m is independently an integer of 1 to 6.

In the above formula, R ^Z' has the same meaning as R ^Z described in formula (A) above. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, and at least one of OR ^4A is a hydroxyl group.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-5.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-9.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-7.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-9.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-7.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-4.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-6.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-8.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-8.

In the above formula, R ^T' is a cyclic alkyl group having 3 to 30 carbon atoms. Furthermore, each R ^4A is independently a hydrogen atom or an acid-labile group, at least one of OR ^4A is a hydroxyl group, and m is an integer of 1-3.
Further, the compound represented by formula (A) is preferably a compound having the following structure from the viewpoint of etching resistance.

In the above formula, R ^0A has the same definition as R ^Y described in formula (A) above, R ^1A' has the same meaning as R ^Z described in formula (A) above, and R ¹⁰ and R ¹¹ have the same meaning as R Z described in formula (A) above. It is synonymous with ^R4A explained in (1).

In the above formula, R ^0A has the same definition as R ^Y described in formula (A) above, R ^1A' has the same meaning as R ^Z described in formula (A) above, and R ¹⁰ and R ¹¹ have the same meaning as R Z described in formula (A) above. It is synonymous with ^R4A explained in (1). R ¹⁴ is a cyclic alkyl group having 3 to 30 carbon atoms, and each m ¹⁴ is independently an integer of 0 to 5;

In the above formula, R ¹⁰ and R ¹¹ have the same definition as R ^4A explained in formula (1) above, and R ¹⁵ is a C 3-30 cyclic alkyl group.

In the above formula, R ¹⁰ and R ¹¹ have the same definitions as R ^4A described in formula (1) above, and R ¹⁶ is a group containing a cyclic alkyl group having 3 to 30 carbon atoms.

In the above formula, R ¹⁰ and R ¹¹ have the same definitions as R ^4A described in formula (1) above, and R ¹⁴ is a cyclic alkyl group having 3 to 30 carbon atoms. Each m14 ^' is independently an integer of 0-4. However, at least one m14 ^' is an integer of 1-4.

In the above formula, R ¹⁰ and R ¹¹ have the same definitions as R ^4A described in formula (1) above, and R ¹⁴ is a cyclic alkyl group having 3 to 30 carbon atoms. m ^14' is an integer of 1-4.

In the above formula, R ¹⁰ and R ¹¹ have the same definitions as R ^4A described in formula (1) above, and R ¹⁴ is a cyclic alkyl group having 3 to 30 carbon atoms. Each m14 ^' is independently an integer of 0-4. However, at least one m14 ^' is an integer of 1-4.

In the above formula, R ¹⁰ and R ¹¹ have the same definitions as R ^4A described in formula (1) above, and R ¹⁴ is a cyclic alkyl group having 3 to 30 carbon atoms. Each m14 ^' is independently an integer of 1-4.

In the above formula, R ¹⁰ and R ¹¹ have the same meaning as R ^4A explained in formula (1) above. As the compound represented by the above formula, a compound having a dibenzoxanthene skeleton is preferable from the viewpoint of heat resistance.

From the viewpoint of raw material availability, the compound represented by the formula (A) is preferably a compound having the following structure.

In the above formula, R ^0A has the same definition as R ^Y described in formula (A) above, R ^1A' has the same meaning as R ^Z described in formula (A) above, and R ¹⁰ , R ¹¹ and R ¹³ are , is synonymous with R ^4A described in formula (1) above. The compound represented by the above formula is preferably a compound having a xanthene skeleton from the viewpoint of heat resistance.

In the above formula, R ¹⁰ , R ¹¹ and R ¹³ have the same definitions as R ^4A described in formula (1) above, and R ¹⁴ , R ¹⁵ , R ¹⁶ , m ¹⁴ and m ^14' have the same definitions as above.

[Method for producing compound represented by formula (A)]
The compound represented by Formula (A) of the present embodiment can be appropriately synthesized by applying a known technique, and the synthesis technique is not particularly limited. For example, a naphthol and an aldehyde or ketone corresponding to the structure of the desired compound are polycondensed under normal pressure in the presence of an acid catalyst to obtain the compound represented by the general formula (A). be able to. Also, if necessary, it can be carried out under pressure.

Examples of the naphthols include naphthol, methylnaphthol, methoxynaphthalene, naphthalenediol, and naphthalenetriol, but are not particularly limited thereto. These can be used individually by 1 type or in combination of 2 or more types. Among these, naphthalene diol and naphthalene triol are more preferable from the viewpoint of easily forming a xanthene structure.

Examples of the aldehydes include cyclopropylaldehyde, cyclobutyraldehyde, cyclohexylaldehyde, cyclodecylaldehyde, cycloundecylaldehyde, cyclopropylbenzaldehyde, cyclobutylbenzaldehyde, cyclohexylbenzaldehyde, cyclodecylbenzaldehyde, cycloundecylbenzaldehyde and the like. but not particularly limited to these. These can be used individually by 1 type or in combination of 2 or more types. Among these, cyclohexylbenzaldehyde, cyclodecylbenzaldehyde, cycloundecylbenzaldehyde and the like are preferably used from the viewpoint of providing high heat resistance.

Examples of the ketones include, but are not limited to, cyclobutanone, cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone, cycloundecanone, and adamantanone. These can be used individually by 1 type or in combination of 2 or more types. Among these, cyclohexanone and cycloundecanone are preferably used from the viewpoint of providing high heat resistance.

The acid catalyst used in the above reaction is not particularly limited and can be appropriately selected from known catalysts. Inorganic acids and organic acids are widely known as such acid catalysts. Specific examples of the acid catalyst include inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, hydrobromic acid, hydrofluoric acid; oxalic acid, malonic acid, succinic acid, adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid organic acids such as acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid, naphthalenedisulfonic acid; zinc chloride, aluminum chloride , ferric chloride, and boron trifluoride; and solid acids such as silicotungstic acid, phosphotungstic acid, silicomolybdic acid, and phosphomolybdic acid, but are not particularly limited thereto. Among these, organic acids and solid acids are preferable from the viewpoint of production, and it is preferable to use hydrochloric acid or sulfuric acid from the viewpoint of production such as availability and ease of handling. In addition, about an acid catalyst, it can be used individually by 1 type or in combination of 2 or more types. In addition, the amount of the acid catalyst used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. Parts by mass are preferred.

A reaction solvent may be used in the above reaction. The reaction solvent is not particularly limited as long as the reaction between the aldehydes or ketones used and the phenols proceeds, and can be appropriately selected and used from known solvents. , ethanol, propanol, butanol, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, or mixed solvents thereof. In addition, a solvent can be used individually by 1 type or in combination of 2 or more types. In addition, the amount of these solvents to be used can be appropriately set according to the raw materials to be used, the type of acid catalyst to be used, reaction conditions, and the like. The amount of the solvent used is not particularly limited, but it is preferably in the range of 0 to 2000 parts by mass with respect to 100 parts by mass of the reaction raw material. Furthermore, the reaction temperature in the above reaction can be appropriately selected according to the reactivity of the reaction raw materials. Although the reaction temperature is not particularly limited, it is usually preferably in the range of 10 to 200°C. In order to form a xanthene structure or a thioxanthene structure as the compound having the structure represented by the general formula (A) of the present embodiment, the reaction temperature is preferably high, specifically in the range of 60 to 200°C. is preferred. The reaction method can be appropriately selected and used from known methods, and is not particularly limited, but may be a method of charging phenols, aldehydes or ketones, an acid catalyst all at once, or a method of charging phenols, aldehydes or ketones. is added dropwise in the presence of an acid catalyst. After completion of the polycondensation reaction, isolation of the obtained compound can be carried out according to a conventional method, and is not particularly limited. For example, in order to remove unreacted raw materials, acid catalysts, etc. present in the system, a general method such as raising the temperature of the reactor to 130 to 230° C. and removing volatile matter at about 1 to 50 mmHg is used. By taking it, the target compound can be obtained.

As preferable reaction conditions, 1 mol to excess amount of phenols and 0.001 to 1 mol of acid catalyst are used per 1 mol of aldehydes or ketones, and normal pressure is applied at 50 to 200° C. for 20 minutes to It progresses by making it react for about 100 hours.

After completion of the reaction, the desired product can be isolated by a known method. For example, the reaction solution is concentrated, pure water is added to precipitate the reaction product, cooled to room temperature, separated by filtration, and the solid obtained by filtration is dried, followed by column chromatography, By separating and purifying the by-products, distilling off the solvent, filtering and drying, the intended compound having the structure represented by the above general formula (A) can be obtained.

The molecular weight of the compound having the structure represented by the general formula (A) is not particularly limited, but the weight average molecular weight (Mw) in terms of polystyrene is preferably 350 to 30,000, more preferably 500. ~20,000. In addition, from the viewpoint of enhancing crosslinking efficiency and suppressing volatile components during baking, the compound having the structure represented by the general formula (A) has a degree of dispersion (weight average molecular weight Mw/number average molecular weight Mn) of 1.5. Those within the range of 1 to 7 are preferred. The above Mw and Mn can be measured by the methods described in Examples below.

The compound having the structure represented by the general formula (A) described above preferably has high solubility in solvents from the viewpoint of easier application of the wet process. More specifically, when using 1-methoxy-2-propanol (PGME) and/or propylene glycol monomethyl ether acetate (PGMEA) as a solvent, these compounds and/or resins have a solubility of 10% by mass or more in the solvent. is preferably Here, the solubility in PGME and/or PGMEA is defined as "mass of resin÷(mass of resin+mass of solvent)×100 (mass %)". For example, 10 g of the compound represented by the general formula (A) is evaluated as soluble in 90 g of PGMEA when the solubility of the compound represented by the general formula (A) in PGMEA is "10% by mass or more". There is, and it is evaluated that it does not dissolve when the solubility is "less than 10% by mass".

[Resin Having Structural Unit Derived from Compound Represented by Formula (A)]
The resin of the present embodiment is a resin having structural units derived from the compound represented by the above formula (A) (hereinafter also referred to as "the compound of the present embodiment"). The compound represented by the above formula (A) can be used as it is as a film-forming composition for lithography or the like. Moreover, it can also be used as a resin having a structural unit derived from the compound represented by the above formula (A). The resin having a structural unit derived from the compound represented by formula (A) includes a resin having a structural unit derived from the compound represented by formula (1), and a resin having a structural unit derived from the compound represented by formula (1'). A resin having a structural unit derived from a compound represented by formula (2), and a resin having a structural unit derived from a compound represented by formula (2). 1)”, “the compound represented by the formula (1′)”, and “the compound represented by the formula (2)”.

[Method for Producing Resin Having Structural Unit Derived from Compound Represented by Formula (A)]
The resin of the present embodiment can be obtained, for example, by reacting the compound represented by the above formula (A) with a compound having cross-linking reactivity.

As the cross-linkable compound, known compounds can be used without particular limitation as long as they can oligomerize or polymerize the compound represented by the above formula (A). Specific examples thereof include, but are not limited to, aldehydes, ketones, carboxylic acids, carboxylic acid halides, halogen-containing compounds, amino compounds, imino compounds, isocyanates, unsaturated hydrocarbon group-containing compounds, and the like.

A specific example of the resin in the present embodiment is a novolak resin obtained by condensation reaction of the compound represented by the above formula (A) with an aldehyde, which is a compound having cross-linking reactivity, or the like.

Examples of aldehydes used in novolac-forming the compound represented by formula (A) include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, phenylpropylaldehyde, hydroxybenzaldehyde, Examples include, but are not limited to, chlorobenzaldehyde, nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde, butylbenzaldehyde, biphenylaldehyde, naphthaldehyde, anthracenecarbaldehyde, phenanthrenecarbaldehyde, pyrenecarbaldehyde, furfural and the like. Among these, formaldehyde is more preferred. In addition, these aldehydes can be used individually by 1 type or in combination of 2 or more types. The amount of the aldehyde to be used is not particularly limited, but is preferably 0.2 to 5 mol, more preferably 0.5 to 2 mol, per 1 mol of the compound represented by the formula (A). be.

An acid catalyst can also be used in the condensation reaction between the compound represented by formula (A) and aldehyde. The acid catalyst used here is not particularly limited and can be appropriately selected from known ones. As such acid catalysts, inorganic acids, organic acids, Lewis acids, and solid acids are widely known. Malonic acid, succinic acid, adipic acid, sebacic acid, citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfone acids, organic acids such as naphthalenesulfonic acid and naphthalenedisulfonic acid; Lewis acids such as zinc chloride, aluminum chloride, iron chloride and boron trifluoride; Examples include solid acids and the like, but are not particularly limited to these. Among these, organic acids and solid acids are preferred from the viewpoint of production, and hydrochloric acid or sulfuric acid is preferred from the viewpoint of production such as availability and ease of handling. In addition, about an acid catalyst, it can be used individually by 1 type or in combination of 2 or more types.

In addition, the amount of the acid catalyst used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. Parts by mass are preferred.

However, cross-linkable compounds such as indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, norbornadiene, 5-vinylnorborn-2-ene, In the case of copolymerization reaction with compounds having non-conjugated double bonds such as α-pinene, β-pinene and limonene, aldehydes are not necessarily required.

A reaction solvent can also be used in the condensation reaction between the compound represented by formula (A) and the aldehyde. The reaction solvent in this polycondensation can be appropriately selected and used from among known solvents, and is not particularly limited. Examples thereof include water, methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, and mixed solvents thereof. exemplified. In addition, the reaction solvent can be used individually by 1 type or in combination of 2 or more types.

In addition, the amount of these reaction solvents used can be appropriately set according to the raw material used, the type of catalyst used, and the reaction conditions, and is not particularly limited. It is preferably in the range of part. Furthermore, the reaction temperature can be appropriately selected according to the reactivity of the reaction raw materials, and is not particularly limited, but is usually in the range of 10 to 200°C. In addition, the reaction method can be appropriately selected from known methods and is not particularly limited. ) and aldehydes in the presence of a catalyst.

After completion of the polycondensation reaction, isolation of the obtained resin can be carried out according to a conventional method, and is not particularly limited. For example, in order to remove unreacted raw materials, catalysts, etc. present in the system, general methods such as raising the temperature of the reactor to 130 to 230°C and removing volatile matter at about 1 to 50 mmHg are adopted. As a result, the desired novolak resin can be obtained.

Here, the resin in this embodiment may be a homopolymer of the compound represented by formula (A) above, or may be a copolymer with other phenols. Examples of copolymerizable phenols include phenol, cresol, dimethylphenol, trimethylphenol, butylphenol, phenylphenol, diphenylphenol, naphthylphenol, resorcinol, methylresorcinol, catechol, butylcatechol, methoxyphenol, methoxyphenol, Examples include, but are not limited to, propylphenol, pyrogallol, thymol, and the like.

Moreover, the resin in the present embodiment may be one obtained by copolymerizing with a polymerizable monomer other than the other phenols described above. Examples of such copolymerizable monomers include naphthol, methylnaphthol, methoxynaphthol, dihydroxynaphthalene, indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, and 4-vinylcyclohexene. , norbornadiene, vinylnorbornaene, pinene, limonene and the like, but are not particularly limited thereto. Note that the resin in the present embodiment may be a binary or more (for example, two to four) copolymer of the compound represented by the above formula (A) and the above-described phenols, or the above formula ( Even in a binary or more (for example, 2 to quaternary) copolymer of the compound represented by A) and the above-described copolymerization monomer, the compound represented by the above formula (A) and the above-described phenols It may be a ternary or higher (for example, ternary to quaternary) copolymer of the above-described copolymerizable monomer.

The molecular weight of the resin in the present embodiment is not particularly limited, but the polystyrene equivalent weight average molecular weight (Mw) is preferably 500 to 30,000, more preferably 750 to 20,000. In addition, from the viewpoint of increasing the cross-linking efficiency and suppressing volatile components during baking, the resin in the present embodiment has a degree of dispersion (weight average molecular weight Mw/number average molecular weight Mn) within the range of 1.2 to 7. preferable. The above Mn can be determined by the method described in the examples below.

[Composition]
The composition of this embodiment contains one or more substances selected from the group consisting of the compound represented by the formula (A) and a resin having a structural unit derived from the compound. Moreover, the composition of this embodiment may contain both the compound of this embodiment and the resin of this embodiment. Hereinafter, "one or more selected from the group consisting of a compound represented by the above formula (A) and a resin having a structural unit derived from the compound" is referred to as "the compound and / or resin of the present embodiment" or "component (A)”.

[Composition for Forming Optical Parts]
The composition for forming an optical component of the present embodiment contains one or more selected from the group consisting of the compound represented by the above formula (A) and a resin having a structural unit derived from the compound. Moreover, the composition for forming an optical component of the present embodiment may contain both the compound of the present embodiment and the resin of the present embodiment. Here, "optical parts" include film-shaped and sheet-shaped parts, as well as plastic lenses (prism lenses, lenticular lenses, microlenses, Fresnel lenses, viewing angle control lenses, contrast enhancement lenses, etc.), retardation films, Electromagnetic wave shielding films, prisms, optical fibers, solder resists for flexible printed wiring, plating resists, interlayer insulating films for multilayer printed wiring boards, and photosensitive optical waveguides. The compounds and resins of this embodiment are useful for forming these optical components.

[Film-forming composition for lithography]
The film-forming composition for lithography of this embodiment contains one or more substances selected from the group consisting of the compound represented by formula (A) above and a resin having a structural unit derived from the compound. Further, the film-forming composition for lithography of this embodiment may contain both the compound of this embodiment and the resin of this embodiment.

[Resist composition]
The resist composition of this embodiment contains one or more substances selected from the group consisting of the compound represented by the above formula (A) and a resin having a structural unit derived from the compound. Moreover, the resist composition of the present embodiment may contain both the compound of the present embodiment and the resin of the present embodiment.

Moreover, the resist composition of the present embodiment preferably contains a solvent. Examples of the solvent include, but are not limited to, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-propyl ether acetate, and ethylene glycol mono-n-butyl ether acetate. ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, propylene glycol mono - propylene glycol monoalkyl ether acetates such as n-butyl ether acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether; methyl lactate, ethyl lactate, n-propyl lactate, lactic acid n -Lactic acid esters such as butyl and n-amyl lactate; Carboxylic acid esters; methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 3-methoxy-2-methylpropionate, 3-methoxybutyl acetate, Other esters such as 3-methyl-3-methoxybutyl acetate, butyl 3-methoxy-3-methylpropionate, butyl 3-methoxy-3-methylbutyrate, methyl acetoacetate, methyl pyruvate, ethyl pyruvate; toluene , xylene and other aromatic hydrocarbons; 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone (CPN), cyclohexanone (CHN) and other ketones; N,N-dimethylformamide, N-methylacetamide, Examples include amides such as N,N-dimethylacetamide and N-methylpyrrolidone; lactones such as γ-lactone, but are not particularly limited. These solvents can be used alone or in combination of two or more.

The solvent used in this embodiment is preferably a safe solvent, more preferably at least one selected from PGMEA, PGME, CHN, CPN, 2-heptanone, anisole, butyl acetate, ethyl propionate and ethyl lactate. seeds, and more preferably at least one selected from PGMEA, PGME and CHN.

In the present embodiment, the amount of the solid component and the amount of the solvent are not particularly limited. %, more preferably 1 to 50% by mass solid component and 50 to 99% by mass solvent, more preferably 2 to 40% by mass solid component and 60 to 98% by mass solvent, particularly preferably solid component 2 to 10% by weight and 90 to 98% by weight of solvent.

[Other ingredients]
The resist composition of the present embodiment contains, if necessary, other components such as a cross-linking agent, an acid generator, and an organic solvent, in addition to the compound having the structure represented by the general formula (A) described above. good too. These optional components are described below.

[Acid generator (C)]
In the resist composition of the present embodiment, acid is generated directly or indirectly by irradiation with any radiation selected from visible light, ultraviolet rays, excimer lasers, electron beams, extreme ultraviolet rays (EUV), X-rays and ion beams. It is preferable that one or more acid generators (C) are included. Although the acid generator (C) is not particularly limited, for example, those described in International Publication No. 2013/024778 can be used. The acid generator (C) can be used alone or in combination of two or more.

The amount of the acid generator (C) used is preferably 0.001 to 49% by mass, more preferably 1 to 40% by mass, still more preferably 3 to 30% by mass, and 10 to 25% by mass of the total weight of the solid components. Especially preferred. By using it within the above range, a pattern profile with high sensitivity and low edge roughness can be obtained. In the present embodiment, the method for generating acid is not limited as long as acid is generated in the system. If an excimer laser is used instead of g-line, i-line, and other ultraviolet rays, finer processing is possible, and if electron beams, extreme ultraviolet rays, X-rays, and ion beams are used as high-energy beams, even finer processing is possible. is possible.

[Acid cross-linking agent (G)]
In this embodiment, it is preferable to contain one or more acid cross-linking agents (G). The acid crosslinking agent (G) is a compound capable of intramolecularly or intermolecularly crosslinking the component (A) in the presence of an acid generated from the acid generator (C). Examples of such an acid cross-linking agent (G) include compounds having one or more groups capable of cross-linking the component (A) (hereinafter referred to as "crosslinkable groups").

Examples of such crosslinkable groups include, but are not limited to, (i) hydroxy groups such as hydroxy (C1-C6 alkyl group), C1-C6 alkoxy (C1-C6 alkyl group), acetoxy (C1-C6 alkyl group), etc. Alkyl groups or groups derived therefrom; (ii) carbonyl groups such as formyl groups and carboxy (C1-C6 alkyl groups) or groups derived therefrom; (iii) dimethylaminomethyl groups, diethylaminomethyl groups, dimethylol Nitrogen-containing group-containing groups such as aminomethyl group, diethylolaminomethyl group and morpholinomethyl group; (iv) glycidyl group-containing groups such as glycidyl ether group, glycidyl ester group and glycidylamino group; (v) benzyloxymethyl group, Groups derived from aromatic groups such as C1-C6 allyloxy (C1-C6 alkyl group), C1-C6 aralkyloxy (C1-C6 alkyl group) such as benzoyloxymethyl group; (vi) vinyl group, isopropenyl Examples include polymerizable multiple bond-containing groups such as groups. As the crosslinkable group of the acid crosslinker (G) in the present embodiment, a hydroxyalkyl group, an alkoxyalkyl group, and the like are preferable, and an alkoxymethyl group is particularly preferable.

The acid cross-linking agent (G) having a cross-linkable group is not particularly limited, but for example, those described in International Publication No. 2013/024778 can be used. The acid cross-linking agent (G) can be used alone or in combination of two or more.

In the present embodiment, the amount of the acid cross-linking agent (G) used is preferably 0.5 to 49% by mass, more preferably 0.5 to 40% by mass, even more preferably 1 to 30% by mass, based on the total weight of the solid component. 2 to 20% by weight is particularly preferred. When the mixing ratio of the acid cross-linking agent (G) is 0.5% by mass or more, the effect of suppressing the solubility of the resist film in an alkaline developer is improved, the residual film rate is lowered, and swelling and meandering of the pattern are prevented. On the other hand, when it is set to 50% by mass or less, it is preferable because a decrease in heat resistance as a resist can be suppressed.

[Acid diffusion controller (E)]
In the present embodiment, an acid diffusion control agent (E) that controls the diffusion in the resist film of the acid generated from the acid generator upon exposure to radiation and has the effect of preventing undesirable chemical reactions in the unexposed region. may be incorporated into the resist composition. By using such an acid diffusion controller (E), the storage stability of the resist composition is improved. In addition, the resolution is improved, and the change in line width of the resist pattern due to fluctuations in the holding time before irradiation and the holding time after irradiation can be suppressed, resulting in extremely excellent process stability. Examples of such an acid diffusion controller (E) include, but are not limited to, radiolytic basic compounds such as nitrogen atom-containing basic compounds, basic sulfonium compounds, and basic iodonium compounds.

The acid diffusion controller (E) is not particularly limited, but for example, those described in International Publication No. 2013/024778 can be used. The acid diffusion controller (E) can be used alone or in combination of two or more.

The amount of the acid diffusion control agent (E) is preferably 0.001 to 49% by mass, more preferably 0.01 to 10% by mass, still more preferably 0.01 to 5% by mass, based on the total weight of the solid components. 0.01 to 3% by weight is particularly preferred. Within the above range, it is possible to prevent deterioration of resolution, pattern shape, dimensional fidelity, and the like. Furthermore, even if the holding time from electron beam irradiation to heating after irradiation becomes long, the shape of the pattern upper layer portion is not deteriorated. Further, when the blending amount is 10% by mass or less, it is possible to prevent deterioration of sensitivity, developability of unexposed areas, and the like. In addition, by using such an acid diffusion control agent, the storage stability of the resist composition is improved, and the resolution is improved. A change in the line width of the resist pattern can be suppressed, resulting in extremely excellent process stability.

[Other components (F)]
In the resist composition of the present embodiment, as other components (F), if necessary, a dissolution accelerator, a dissolution control agent, a sensitizer, a surfactant, and an organic carboxylic acid or a phosphorus oxoacid or a derivative thereof 1 type or 2 types or more of various additives can be added.

[Solubilizer]
When the solubility of the compound represented by formula (A) in a developer is too low, the low-molecular-weight dissolution accelerator increases the solubility of the compound to moderately increase the dissolution rate of the compound during development. It is a component that has and can be used as needed. Examples of the dissolution accelerator include low-molecular-weight phenolic compounds such as bisphenols and tris(hydroxyphenyl)methane. These dissolution promoters can be used alone or in combination of two or more.

The amount of the dissolution accelerator is appropriately adjusted according to the type of the compound used, but is preferably 0 to 49% by mass, more preferably 0 to 5% by mass, and 0 to 1% by mass of the total weight of the solid component. is more preferred, and 0% by mass is particularly preferred.

[Dissolution control agent]
The dissolution controller is a component that controls the solubility of the compound represented by the formula (A) in a developing solution to moderately decrease the dissolution rate during development when the solubility in the developer is too high. As such a dissolution control agent, one that does not chemically change in the steps of baking the resist film, irradiation with radiation, development and the like is preferred.

Examples of the dissolution controller include, but are not limited to, aromatic hydrocarbons such as phenanthrene, anthracene and acenaphthene; ketones such as acetophenone, benzophenone and phenylnaphthylketone; methylphenylsulfone, diphenylsulfone and dinaphthylsulfone. Sulfones and the like can be mentioned. These dissolution control agents can be used alone or in combination of two or more.
The amount of the dissolution control agent to be blended is appropriately adjusted according to the type of the compound used, and is preferably 0 to 49% by mass, more preferably 0 to 5% by mass, more preferably 0 to 1% by mass of the total weight of the solid components. is more preferred, and 0% by mass is particularly preferred.

[Sensitizer]
The sensitizer absorbs the energy of the irradiated radiation and transmits the energy to the acid generator (C), thereby increasing the amount of acid generated, thereby improving the apparent sensitivity of the resist. It is an ingredient that causes Examples of such sensitizers include benzophenones, biacetyls, pyrenes, phenothiazines, and fluorenes, but are not particularly limited. These sensitizers can be used alone or in combination of two or more.

The blending amount of the sensitizer is appropriately adjusted according to the type of the compound used, and is preferably 0 to 49% by mass, more preferably 0 to 5% by mass, more preferably 0 to 1% by mass of the total weight of the solid component. More preferably, 0% by mass is particularly preferable.

[Surfactant]
The surfactant is a component that has the action of improving the coatability and striation of the resist composition of the present embodiment, the developability of the resist, and the like. Such surfactants may be anionic surfactants, cationic surfactants, nonionic surfactants or amphoteric surfactants. Preferred surfactants are nonionic surfactants. Nonionic surfactants have good affinity with the solvent used in the production of the resist composition and are more effective. Examples of nonionic surfactants include, but are not particularly limited to, polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkylphenyl ethers, and higher fatty acid diesters of polyethylene glycol. Commercial products are not particularly limited, but the following trade names include F-top (manufactured by Jemco), Megafac (manufactured by Dainippon Ink and Chemicals), Florard (manufactured by Sumitomo 3M), Asahiguard, Surflon ( Asahi Glass Co., Ltd.), Pepol (Toho Chemical Industry Co., Ltd.), KP (Shin-Etsu Chemical Co., Ltd.), Polyflow (Kyoeisha Yushi Kagaku Kogyo Co., Ltd.), and the like.

The blending amount of the surfactant is appropriately adjusted according to the type of the compound used, but is preferably 0 to 49% by mass, more preferably 0 to 5% by mass, and 0 to 1% by mass of the total weight of the solid component. is more preferred, and 0% by mass is particularly preferred.

[Organic carboxylic acid or phosphorus oxo acid or derivative thereof]
For the purpose of preventing deterioration of sensitivity or improving resist pattern shape, storage stability, etc., an organic carboxylic acid or phosphorus oxo acid or a derivative thereof can be added as an optional component. The organic carboxylic acid, phosphorus oxoacid, or derivative thereof can be used together with the acid diffusion controller, or can be used alone. Suitable examples of organic carboxylic acids include malonic acid, citric acid, malic acid, succinic acid, benzoic acid, and salicylic acid. Examples of phosphorus oxoacids or derivatives thereof include phosphoric acid, phosphoric acid such as di-n-butyl phosphate and diphenyl phosphate, derivatives such as esters thereof, phosphonic acid, dimethyl phosphonate, and di-phosphonic acid. n-butyl ester, phenylphosphonic acid, phosphonic acid diphenyl ester, phosphonic acid dibenzyl ester and other phosphonic acids or their ester derivatives, phosphinic acid, phenylphosphinic acid and other phosphinic acids and their ester derivatives. Among these, phosphonic acid is particularly preferred.

The organic carboxylic acid or phosphorus oxoacid or derivative thereof may be used alone or in combination of two or more. The amount of the organic carboxylic acid or phosphorus oxoacid or its derivative is appropriately adjusted according to the type of the compound used, but is preferably 0 to 49% by mass, more preferably 0 to 5% by mass of the total weight of the solid component. More preferably, 0 to 1% by mass is more preferable, and 0% by mass is particularly preferable.

[Other additives other than the above-mentioned additives (solubility accelerators, solubility control agents, sensitizers, surfactants, organic carboxylic acids or phosphorus oxoacids or derivatives thereof, etc.)]
Furthermore, the resist composition of the present embodiment may optionally contain one additive other than the dissolution controller, sensitizer, surfactant, and organic carboxylic acid or phosphorus oxoacid or derivative thereof. Alternatively, two or more kinds can be blended. Such additives include, for example, dyes, pigments, adhesion aids, and the like. For example, it is preferable to add a dye or a pigment because the latent image in the exposed area can be visualized and the influence of halation during exposure can be reduced. In addition, it is preferable to add an adhesion promoter because it can improve the adhesion to the substrate. Furthermore, other additives are not particularly limited, but examples include antihalation agents, storage stabilizers, antifoaming agents, shape improving agents, and specifically 4-hydroxy-4'-methylchalcone. can be done.

In the resist composition of the present embodiment, the total amount of the optional component (F) is 0 to 99% by mass, preferably 0 to 49% by mass, more preferably 0 to 10% by mass, based on the total weight of the solid components. ~5% by mass is more preferable, 0 to 1% by mass is more preferable, and 0% by mass is particularly preferable.

[Ratio of each component in the resist composition]
In the resist composition of the present embodiment, the content of the compound and/or resin of the present embodiment is not particularly limited. A resin containing a compound as a constituent component, an acid generator (C), an acid cross-linking agent (G), an acid diffusion controller (E) and other components (F) (also referred to as “optional component (F)”), etc. The sum of solid components including optionally used components, hereinafter the same) is preferably 50 to 99.4% by mass, more preferably 55 to 90% by mass, still more preferably 60 to 80% by mass, Particularly preferably, it is 60 to 70% by mass. With the above content, the resolution is further improved and the line edge roughness (LER) is further reduced. In addition, when both the compound and resin of this embodiment are contained, the said content is the total amount of the compound and resin of this embodiment.

In the resist composition of the present embodiment, the compound and/or resin of the present embodiment (component (A)), acid generator (C), acid cross-linking agent (G), acid diffusion control agent (E), optional components ( The content ratio of F) (component (A)/acid generator (C)/acid cross-linking agent (G)/acid diffusion controller (E)/optional component (F)) is based on the solid content of the resist composition of 100 mass. %, preferably 50 to 99.4 mass% / 0.001 to 49 mass% / 0.5 to 49 mass% / 0.001 to 49 mass% / 0 to 49 mass%, more preferably 55 to 90% by mass/1 to 40% by mass/0.5 to 40% by mass/0.01 to 10% by mass/0 to 5% by mass, more preferably 60 to 80% by mass/3 to 30% by mass /1 to 30% by mass/0.01 to 5% by mass/0 to 1% by mass, particularly preferably 60 to 70% by mass/10 to 25% by mass/2 to 20% by mass/0.01 to 3% by mass %/0 mass %. The blending ratio of the components is selected from each range so that the sum total is 100% by mass. With the above composition, performances such as sensitivity, resolution and developability are excellent. In addition, "solid content" refers to the component excluding the solvent, and "solid content 100% by mass" refers to the component excluding the solvent being 100% by mass.

The resist composition of the present embodiment is usually prepared by dissolving each component in a solvent to form a uniform solution at the time of use, and then, if necessary, filtering through a filter having a pore size of about 0.2 μm. be.

The resist composition of the present embodiment can contain other resins than the resin of the present embodiment, if necessary. The resin is not particularly limited. Combinations, derivatives thereof, and the like are included. The content of the resin is not particularly limited, and is appropriately adjusted according to the type of component (A) used. It is 10 parts by mass or less, more preferably 5 parts by mass or less, and particularly preferably 0 parts by mass.

[Physical properties of resist composition]
The resist composition of this embodiment can form an amorphous film by spin coating. Moreover, it can be applied to a general semiconductor manufacturing process. Either a positive resist pattern or a negative resist pattern can be produced depending on the type of developer used.

In the case of a positive resist pattern, the dissolution rate of the amorphous film formed by spin coating the resist composition of the present embodiment in a developer at 23° C. is preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec. Preferably, 0.0005 to 5 Å/sec is more preferable. When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. It is presumed that this is because the change in the solubility of component (A) before and after exposure increases the contrast at the interface between the exposed area that dissolves in the developer and the unexposed area that does not dissolve in the developer. In addition, there are effects of reducing LER and reducing defects.

In the case of a negative resist pattern, the dissolution rate in a developer at 23° C. of an amorphous film formed by spin-coating the resist composition of this embodiment is preferably 10 Å/sec or more. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10 Å/sec or more, the resolution may be improved. This is presumed to be due to the dissolution of microscopic surface sites of component (A), which reduces the LER. In addition, there is an effect of reducing defects.

The dissolution rate is measured by immersing an amorphous film in a developer for a predetermined time at 23° C., and measuring the film thickness before and after the immersion by a known method such as visual observation, an ellipsometer, or a quartz crystal vibration microbalance method (QCM method). can decide.

In the case of a positive resist pattern, the portion of the amorphous film formed by spin coating the resist composition of the present embodiment exposed to radiation such as KrF excimer laser, extreme ultraviolet ray, electron beam or X-ray is exposed to a developer at 23 ° C. The dissolution rate is preferably 10 Å/sec or more. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10 Å/sec or more, the resolution may be improved. This is presumed to be due to the dissolution of microscopic surface sites of component (A), which reduces the LER. In addition, there is an effect of reducing defects.

In the case of a negative resist pattern, the portion of the amorphous film formed by spin-coating the resist composition of the present embodiment exposed to radiation such as KrF excimer laser, extreme ultraviolet ray, electron beam or X-ray is exposed to a developer at 23 ° C. The dissolution rate is preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec, even more preferably 0.0005 to 5 Å/sec. When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. It is presumed that this is because the change in the solubility of component (A) before and after exposure increases the contrast at the interface between the unexposed area that dissolves in the developer and the exposed area that does not dissolve in the developer. It also has the effect of reducing LER and reducing defects.

[Radiation sensitive composition]
The radiation-sensitive composition of the present embodiment is a radiation-sensitive composition containing the compound of the present embodiment and/or the resin of the present embodiment (component (A)), the diazonaphthoquinone photoactive compound (B), and a solvent. a radiation-sensitive composition, wherein the content of the solvent is 20 to 99% by mass with respect to 100% by mass of the total amount of the radiation-sensitive composition, and the content of components other than the solvent is the radiation-sensitive composition. 1 to 80% by mass with respect to 100% by mass of the total amount of the sexual composition.

The component (A) to be contained in the radiation-sensitive composition of the present embodiment is used in combination with the diazonaphthoquinone photoactive compound (B) described later, and can be used for g-line, h-line, i-line, KrF excimer laser, ArF excimer laser, extreme It is useful as a base material for a positive resist that becomes a readily soluble compound in a developer when irradiated with ultraviolet rays, electron beams or X-rays. The properties of component (A) do not change significantly when exposed to g-line, h-line, i-line, KrF excimer laser, ArF excimer laser, extreme ultraviolet rays, electron beams, or X-rays, but diazonaphthoquinone, which is sparingly soluble in a developer, is photoactive. By changing the compound (B) into a readily soluble compound, a resist pattern can be formed by a development step.

Since the component (A) contained in the radiation-sensitive composition of the present embodiment is a compound with a relatively low molecular weight as shown in the above formula (A), the roughness of the obtained resist pattern is very small.

The glass transition temperature of component (A) contained in the radiation-sensitive composition of the present embodiment is preferably 100°C or higher, more preferably 120°C or higher, still more preferably 140°C or higher, and particularly preferably 150°C or higher. . Although the upper limit of the glass transition temperature of component (A) is not particularly limited, it is, for example, 400°C. When the glass transition temperature of the component (A) is within the above range, it has heat resistance capable of maintaining the pattern shape in the semiconductor lithography process, and performance such as high resolution is improved.

The crystallization heat value of the component (A) contained in the radiation-sensitive composition of the present embodiment, determined by differential scanning calorimetric analysis of the glass transition temperature, is preferably less than 20 J/g. In addition, (crystallization temperature) - (glass transition temperature) is preferably 70°C or higher, more preferably 80°C or higher, still more preferably 100°C or higher, and particularly preferably 130°C or higher. When the heat of crystallization is less than 20 J/g, or (crystallization temperature) - (glass transition temperature) is within the above range, an amorphous film can be easily formed by spin-coating the radiation-sensitive composition, and The film formability required for the resist can be maintained for a long period of time, and the resolution can be improved.

In the present embodiment, the crystallization heat value, crystallization temperature and glass transition temperature can be determined by differential scanning calorimetry using DSC/TA-50WS manufactured by Shimadzu Corporation. About 10 mg of a sample is placed in an aluminum unsealed container and heated to the melting point or higher at a heating rate of 20° C./min in a nitrogen gas stream (50 mL/min). After quenching, the temperature is again raised to the melting point or higher at a heating rate of 20° C./min in a nitrogen gas stream (30 mL/min). After further rapid cooling, the temperature is again raised to 400° C. in a nitrogen gas stream (30 mL/min) at a heating rate of 20° C./min. The glass transition temperature (Tg) is defined as the temperature at the midpoint of the stepped change in the baseline (where the specific heat is halved), and the temperature of the exothermic peak that appears after that is defined as the crystallization temperature. The calorific value is obtained from the area of the region surrounded by the exothermic peak and the baseline, and is defined as the crystallization calorific value.

Component (A) to be contained in the radiation-sensitive composition of the present embodiment has a temperature of 100° C. or less, preferably 120° C. or less, more preferably 130° C. or less, even more preferably 140° C. or less, and particularly preferably 150° C. or less under normal pressure. WHEREIN: It is preferable that sublimability is low. Low sublimability means that the weight loss when held at a predetermined temperature for 10 minutes in thermogravimetric analysis is 10% or less, preferably 5% or less, more preferably 3% or less, further preferably 1% or less, and particularly preferably 1% or less. indicates that it is 0.1% or less. Due to the low sublimability, it is possible to prevent contamination of the exposure apparatus due to outgassing during exposure. Also, a good pattern shape with low roughness can be obtained.

Component (A) to be contained in the radiation-sensitive composition of the present embodiment includes propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone (CHN), cyclopentanone (CPN), and 2-heptanone. , anisole, butyl acetate, ethyl propionate and ethyl lactate, and in a solvent exhibiting the highest dissolving ability for component (A) at 23° C., preferably 1% by mass or more, more preferably 5% by mass % or more, more preferably 10 mass % or more, more preferably selected from PGMEA, PGME, and CHN, and exhibiting the highest dissolving power for component (A) at 23 ° C., 20 It dissolves in an amount of 20% by mass or more at 23° C., preferably 20% by mass or more in PGMEA. Satisfying the above conditions enables use in the semiconductor manufacturing process in actual production.

[Diazonaphthoquinone photoactive compound (B)]
The diazonaphthoquinone photoactive compound (B) to be contained in the radiation-sensitive composition of this embodiment is a diazonaphthoquinone substance, including polymeric and non-polymeric diazonaphthoquinone photoactive compounds, and generally in a positive resist composition, There is no particular limitation as long as it is used as a photosensitive component (photosensitizer), and one or more of them can be arbitrarily selected and used.

Examples of such photosensitizers include those obtained by reacting naphthoquinonediazide sulfonyl chloride, benzoquinonediazide sulfonyl chloride, or the like with a low-molecular-weight compound or high-molecular-weight compound having a functional group capable of condensation reaction with these acid chlorides. Compounds are preferred. Here, the functional group capable of condensing with the acid chloride is not particularly limited, and examples thereof include a hydroxyl group and an amino group, with a hydroxyl group being particularly preferred. The compound that can be condensed with an acid chloride containing a hydroxyl group is not particularly limited, but examples include hydroquinone, resorcinol, 2,4-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,2',3,4,6'- Hydroxybenzophenones such as pentahydroxybenzophenone, hydroxyphenylalkanes such as bis(2,4-dihydroxyphenyl)methane, bis(2,3,4-trihydroxyphenyl)methane and bis(2,4-dihydroxyphenyl)propane , 4,4′,3″,4″-tetrahydroxy-3,5,3′,5′-tetramethyltriphenylmethane, 4,4′,2″,3″,4″-pentahydroxy-3, Hydroxytriphenylmethanes such as 5,3',5'-tetramethyltriphenylmethane and the like can be mentioned.

Further, as acid chlorides such as naphthoquinonediazide sulfonyl chloride and benzoquinonediazide sulfonyl chloride, for example, 1,2-naphthoquinonediazide-5-sulfonyl chloride and 1,2-naphthoquinonediazide-4-sulfonyl chloride are preferred. mentioned.

The radiation-sensitive composition of the present embodiment is prepared, for example, by dissolving each component in a solvent at the time of use to form a uniform solution, and then, if necessary, filtering through a filter having a pore size of about 0.2 μm. preferably.

[solvent]
Solvents that can be used in the radiation-sensitive composition of the present embodiment are not particularly limited, but examples include propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, cyclohexanone, cyclopentanone, 2-heptanone, anisole, and butyl acetate. , ethyl propionate, and ethyl lactate. Among these, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone are preferable. Solvents may be used singly or in combination of two or more.

The content of the solvent is 20 to 99% by mass, preferably 50 to 99% by mass, more preferably 60 to 98% by mass, based on 100% by mass of the total amount of the radiation-sensitive composition. It is preferably 90 to 98% by mass.

In addition, the content of components (solid components) other than the solvent is 1 to 80 mass%, preferably 1 to 50 mass%, more preferably 100 mass% of the total amount of the radiation-sensitive composition. 2 to 40% by mass, particularly preferably 2 to 10% by mass.

[Characteristics of Radiation-Sensitive Composition]
The radiation-sensitive composition of this embodiment can form an amorphous film by spin coating. Moreover, it can be applied to a general semiconductor manufacturing process. Either a positive resist pattern or a negative resist pattern can be produced depending on the type of developer used.

In the case of a positive resist pattern, the dissolution rate of the amorphous film formed by spin-coating the radiation-sensitive composition of the present embodiment in a developer at 23° C. is preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec. is more preferable, and 0.0005 to 5 Å/sec is even more preferable. When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. It is presumed that this is because the change in the solubility of component (A) before and after exposure increases the contrast at the interface between the exposed area that dissolves in the developer and the unexposed area that does not dissolve in the developer. It also has the effect of reducing LER and reducing defects.

In the case of a negative resist pattern, the dissolution rate of the amorphous film formed by spin-coating the radiation-sensitive composition of the present embodiment in a developer at 23° C. is preferably 10 Å/sec or more. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10 Å/sec or more, the resolution may be improved. This is presumed to be due to the dissolution of microscopic surface sites of component (A), which reduces the LER. In addition, there is an effect of reducing defects.

The dissolution rate can be determined by immersing an amorphous film in a developing solution at 23° C. for a predetermined time, and measuring the film thickness before and after the immersion by visual observation, an ellipsometer, a QCM method, or the like.

In the case of a positive resist pattern, the amorphous film formed by spin-coating the radiation-sensitive composition of the present embodiment is irradiated with radiation such as KrF excimer laser, extreme ultraviolet rays, electron beams or X-rays, or after 20 to The dissolution rate of the exposed portion after heating at 500° C. in the developer at 23° C. is preferably 10 Å/sec or more, more preferably 10 to 10000 Å/sec, and even more preferably 100 to 1000 Å/sec. When the dissolution rate is 10 Å/sec or more, it is easily soluble in a developer and is more suitable for resist. Further, when the dissolution rate is 10000 Å/sec or less, the resolution may be improved. This is presumed to be due to the dissolution of microscopic surface sites of component (A), which reduces the LER. In addition, there is an effect of reducing defects.
In the case of a negative resist pattern, the amorphous film formed by spin-coating the radiation-sensitive composition of the present embodiment is irradiated with radiation such as KrF excimer laser, extreme ultraviolet rays, electron beams or X-rays, or after 20 to The dissolution rate of the exposed portion after heating at 500° C. in the developer at 23° C. is preferably 5 Å/sec or less, more preferably 0.05 to 5 Å/sec, and even more preferably 0.0005 to 5 Å/sec. . When the dissolution rate is 5 Å/sec or less, it is insoluble in a developer and can be used as a resist. Further, when the dissolution rate is 0.0005 Å/sec or more, the resolution may be improved. It is presumed that this is because the change in the solubility of component (A) before and after exposure increases the contrast at the interface between the unexposed area that dissolves in the developer and the exposed area that does not dissolve in the developer. It also has the effect of reducing LER and reducing defects.

[Ratio of each component in the radiation-sensitive composition]
In the radiation-sensitive composition of the present embodiment, the content of component (A) is the total weight of solid components (component (A), diazonaphthoquinone photoactive compound (B) and other components (D), etc., which are optionally used). is preferably 1 to 99% by mass, more preferably 5 to 95% by mass, still more preferably 10 to 90% by mass, and particularly preferably 25 to 75% by mass, based on the total amount of solid components that are used, the same applies hereinafter). %. When the content of the component (A) is within the above range, the radiation-sensitive composition of the present embodiment can obtain a pattern with high sensitivity and low roughness.

In the radiation-sensitive composition of the present embodiment, the content of the diazonaphthoquinone photoactive compound (B) is the total weight of solid components (component (A), diazonaphthoquinone photoactive compound (B) and other components (D), etc.). The sum of optionally used solid components, hereinafter the same), preferably 1 to 99% by mass, more preferably 5 to 95% by mass, still more preferably 10 to 90% by mass, particularly preferably 25 to 75% by mass. When the content of the diazonaphthoquinone photoactive compound (B) is within the above range, the radiation-sensitive composition of the present embodiment can obtain a pattern with high sensitivity and low roughness.

[Other components (D)]
The radiation-sensitive composition of the present embodiment may optionally contain, as components other than the component (A) and the diazonaphthoquinone photoactive compound (B), the above-mentioned acid generator, acid cross-linking agent, acid diffusion control agent, One or two or more of various additives such as dissolution accelerators, dissolution control agents, sensitizers, surfactants, organic carboxylic acids, phosphorus oxoacids or derivatives thereof can be added. In addition, in this specification, another component (D) may be called an arbitrary component (D).

Content ratio ((A)/(B)/( D)) is preferably 1 to 99% by mass/99 to 1% by mass/0 to 98% by mass, more preferably 5 to 95% by mass, relative to 100% by mass of the solid content of the radiation-sensitive composition. /95 to 5% by mass/0 to 49% by mass, more preferably 10 to 90% by mass/90 to 10% by mass/0 to 10% by mass, particularly preferably 20 to 80% by mass/80 to 20% by mass % by weight/0 to 5% by weight, most preferably 25 to 75% by weight/75 to 25% by weight/0% by weight.

The blending ratio of each component is selected from each range so that the sum total is 100% by mass. The radiation-sensitive composition of the present embodiment is excellent in properties such as sensitivity, resolution, etc., in addition to roughness, when the blending ratio of each component is within the above range.

The radiation-sensitive composition of this embodiment may contain a resin other than that of this embodiment. Examples of such resins include novolac resins, polyvinylphenols, polyacrylic acid, polyvinyl alcohol, styrene-maleic anhydride resins, and polymers containing acrylic acid, vinyl alcohol, or vinylphenol as monomer units, or these. derivatives and the like. The blending amount of these resins is appropriately adjusted according to the type of component (A) used, but is preferably 30 parts by mass or less, more preferably 10 parts by mass or less per 100 parts by mass of component (A). , more preferably 5 parts by mass or less, and particularly preferably 0 parts by mass.

[Method for producing amorphous film]
The method for producing an amorphous film of this embodiment includes the step of forming an amorphous film on a substrate using the radiation-sensitive composition.

[Method for forming a resist pattern using a radiation-sensitive composition]
The method for forming a resist pattern using the radiation-sensitive composition of the present embodiment includes the steps of forming a resist film on a substrate using the radiation-sensitive composition, and removing at least a portion of the formed resist film. It includes a step of exposing, and a step of developing the exposed resist film to form a resist pattern. In addition, in detail, the same operation as in the following resist pattern forming method using a resist composition can be performed.

[Method for forming resist pattern using resist composition]
A method for forming a resist pattern using the resist composition of the present embodiment includes the steps of forming a resist film on a substrate using the resist composition of the present embodiment described above, and removing at least part of the formed resist film. It comprises a step of exposing, and a step of developing the exposed resist film to form a resist pattern. The resist pattern in this embodiment can also be formed as an upper layer resist in a multilayer process.

The method for forming the resist pattern is not particularly limited, but includes, for example, the following methods. First, a resist film is formed by coating the resist composition of the present embodiment on a conventionally known substrate by a coating means such as spin coating, casting coating, roll coating, or the like. The conventionally known substrates are not particularly limited, and examples thereof include substrates for electronic components, substrates having predetermined wiring patterns formed thereon, and the like. More specifically, examples include, but are not particularly limited to, silicon wafers, metal substrates such as copper, chromium, iron, and aluminum substrates, and glass substrates. The material of the wiring pattern is not particularly limited, and examples thereof include copper, aluminum, nickel, and gold. In addition, if necessary, an inorganic and/or organic film may be provided on the substrate. Examples of the inorganic film include, but are not particularly limited to, an inorganic antireflection film (inorganic BARC). Examples of the organic film include, but are not particularly limited to, an organic antireflection film (organic BARC). Surface treatment with hexamethylenedisilazane or the like may be performed.

Next, if necessary, the coated substrate is heated. The heating conditions are preferably 20 to 250.degree. C., more preferably 20 to 150.degree. Heating is preferable because the adhesion of the resist to the substrate may be improved. Then, the resist film is exposed to a desired pattern with radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, electron beam, extreme ultraviolet (EUV), X-ray, and ion beam. The exposure conditions and the like are appropriately selected according to the composition of the resist composition and the like. In this embodiment, in order to stably form a fine pattern with high precision in exposure, it is preferable to heat after radiation irradiation.

Next, a predetermined resist pattern is formed by developing the exposed resist film with a developer. As the developer, it is preferable to select a solvent having a solubility parameter (SP value) close to the component (A) used, such as a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent, and an ether solvent. A polar solvent such as a hydrocarbon solvent or an alkaline aqueous solution can be used.

Examples of ketone solvents include, but are not limited to, 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, and methylcyclohexanone. , phenylacetone, methylethylketone, methylisobutylketone, acetylacetone, acetonylacetone, ionone, diacetonylalcohol, acetylcarbinol, acetophenone, methylnaphthylketone, isophorone, propylene carbonate and the like.

Examples of ester solvents include, but are not limited to, methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, and diethylene glycol monoethyl ether. Acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate and the like. be able to.

Examples of alcohol solvents include, but are not limited to, methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol (2-propanol), n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, Alcohols such as n-hexyl alcohol, 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol and n-decanol, glycol solvents such as ethylene glycol, diethylene glycol and triethylene glycol, and ethylene glycol monomethyl Glycol ether solvents such as ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, and methoxymethylbutanol can be used.

Examples of the ether solvent include, but are not limited to, the above glycol ether solvents, dioxane, tetrahydrofuran, and the like.

Examples of amide solvents include, but are not limited to, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, hexamethylphosphoric triamide, 1,3-dimethyl-2- Imidazolidinone and the like can be used.

Examples of hydrocarbon solvents include, but are not limited to, aromatic hydrocarbon solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as pentane, hexane, octane, and decane.

A plurality of the above solvents may be mixed, or a solvent other than the above or water may be mixed and used within the range of performance. However, in order to fully exhibit the effects of the present invention, the water content of the developer as a whole is less than 70% by mass, preferably less than 50% by mass, more preferably less than 30% by mass. Preferably, it is more preferably less than 10% by mass, and particularly preferably contains substantially no water. That is, the content of the organic solvent in the developer is 30% by mass or more and 100% by mass or less, preferably 50% by mass or more and 100% by mass or less, and 70% by mass or more and 100% by mass or less. It is more preferably 90% by mass or more and 100% by mass or less, and particularly preferably 95% by mass or more and 100% by mass or less.

The alkaline aqueous solution is not particularly limited, but examples include mono-, di- or trialkylamines, mono-, di- or trialkanolamines, heterocyclic amines, tetramethylammonium hydroxide (TMAH), choline and other alkaline compounds.

In particular, the developer contains at least one solvent selected from ketone-based solvents, ester-based solvents, alcohol-based solvents, amide-based solvents and ether-based solvents. is preferable because it improves the resist performance of

The vapor pressure of the developer at 20° C. is preferably 5 kPa or less, more preferably 3 kPa or less, and particularly preferably 2 kPa or less. By setting the vapor pressure of the developer to 5 kPa or less, evaporation of the developer on the substrate or in the developing cup is suppressed, temperature uniformity within the wafer surface is improved, and as a result, dimensional uniformity within the wafer surface is improved. improve.

Specific examples having a vapor pressure of 5 kPa or less include, but are not limited to, 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, and methylcyclohexanone. , phenylacetone, methyl isobutyl ketone and other ketone solvents; butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropio ester solvents such as phosphate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate; n-propyl alcohol, isopropyl alcohol, n-butyl alcohol , sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol, n-decanol and other alcohol solvents; ethylene glycol, Glycol-based solvents such as diethylene glycol and triethylene glycol; glycols such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, and methoxymethylbutanol; Ether-based solvents; Ether-based solvents such as tetrahydrofuran; Amide-based solvents such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide and N,N-dimethylformamide; Aromatic hydrocarbon-based solvents such as toluene and xylene, octane and aliphatic hydrocarbon solvents such as decane.

Specific examples having a vapor pressure of 2 kPa or less, which is a particularly preferred range, include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, and methylcyclohexanone. , Ketone solvents such as phenylacetone; butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3- Ester solvents such as methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl lactate, butyl lactate, propyl lactate; n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol , 4-methyl-2-pentanol, n-heptyl alcohol, n-octyl alcohol, n-decanol and other alcohol solvents; ethylene glycol, diethylene glycol, triethylene glycol and other glycol solvents; ethylene glycol monomethyl ether, propylene glycol Monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, glycol ether solvents such as methoxymethylbutanol; N-methyl-2-pyrrolidone, N,N-dimethylacetamide , N,N-dimethylformamide; aromatic hydrocarbon solvents such as xylene; and aliphatic hydrocarbon solvents such as octane and decane.

An appropriate amount of surfactant can be added to the developer if necessary.
Although the surfactant is not particularly limited, for example, ionic or nonionic fluorine-based and/or silicon-based surfactants can be used. Examples of these fluorine and/or silicon surfactants include JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, and JP-A-62-170950. , JP-A-63-34540, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988, US Pat. No. 5,405,720, 5360692, 5529881, 5296330, 5436098, 5576143, 5294511, and 5824451. It can, preferably, be a non-ionic surfactant. Although the nonionic surfactant is not particularly limited, it is more preferable to use a fluorine-based surfactant or a silicon-based surfactant.

The amount of surfactant used is generally 0.001 to 5% by mass, preferably 0.005 to 2% by mass, more preferably 0.01 to 0.5% by mass, relative to the total amount of the developer.

The development method is not particularly limited, but for example, a method of immersing the substrate in a tank filled with a developer for a certain period of time (dip method), or a method of heaping up the developer on the surface of the substrate by surface tension and allowing it to stand still for a certain period of time. Development method (paddle method), method of spraying the developer onto the surface of the substrate (spray method), and continuous application of the developer while scanning the developer application nozzle at a constant speed onto the substrate rotating at a constant speed. method (dynamic dispensing method) and the like can be applied. The time for pattern development is not particularly limited, but is preferably 10 to 90 seconds.

Further, after the step of developing, a step of stopping development may be performed while replacing the solvent with another solvent.

After development, it is preferable to include a step of washing with a rinse containing an organic solvent.

The rinsing liquid used in the rinsing step after development is not particularly limited as long as it does not dissolve the resist pattern cured by crosslinking, and a common solution containing an organic solvent or water can be used. As the rinse solution, it is preferable to use a rinse solution containing at least one organic solvent selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents. . More preferably, after development, a step of washing with a rinsing solution containing at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, and amide solvents is performed. Even more preferably, a step of washing with a rinse solution containing an alcohol-based solvent or an ester-based solvent is performed after development. Even more preferably, after development, a step of washing with a rinsing solution containing a monohydric alcohol is performed. Particularly preferably, after development, a step of washing with a rinsing solution containing a monohydric alcohol having 5 or more carbon atoms is performed. The time for pattern rinsing is not particularly limited, but is preferably 10 to 90 seconds.

Here, the monohydric alcohol used in the rinsing step after development includes linear, branched, and cyclic monohydric alcohols, and is not specifically limited. -butanol, 3-methyl-1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol, 1-heptanol, 1-octanol, 2-hexanol , cyclopentanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol, 4-octanol and the like can be used, and particularly preferred monohydric alcohols having 5 or more carbon atoms include 1- Hexanol, 2-hexanol, 4-methyl-2-pentanol, 1-pentanol, 3-methyl-1-butanol and the like can be used.

A plurality of the above components may be mixed, or may be used by mixing with an organic solvent other than the above.

The water content in the rinse liquid is preferably 10% by mass or less, more preferably 5% by mass or less, and particularly preferably 3% by mass or less. By setting the water content to 10% by mass or less, better developing properties can be obtained.

The vapor pressure of the rinse used after development is preferably 0.05 kPa or more and 5 kPa or less, more preferably 0.1 kPa or more and 5 kPa or less, and most preferably 0.12 kPa or more and 3 kPa or less at 20°C. By setting the vapor pressure of the rinsing liquid to 0.05 kPa or more and 5 kPa or less, the temperature uniformity in the wafer surface is further improved, swelling caused by the permeation of the rinsing liquid is further suppressed, and the in-plane dimension of the wafer is reduced. Better uniformity.

An appropriate amount of surfactant may be added to the rinse solution before use.

In the rinsing step, the developed wafer is washed with the rinsing liquid containing the above organic solvent. The method of the cleaning treatment is not particularly limited, but for example, a method of continuously applying the rinse solution onto the substrate rotating at a constant speed (rotation coating method), or a method of immersing the substrate in a bath filled with the rinse solution for a certain period of time. A method (dip method), a method of spraying a rinse solution onto the substrate surface (spray method), etc. can be applied. It is preferable to rotate to remove the rinse liquid from the substrate.

A patterned wiring board is obtained by etching after forming a resist pattern. Etching can be carried out by known methods such as dry etching using plasma gas and wet etching with alkaline solution, cupric chloride solution, ferric chloride solution or the like.

Plating can also be performed after forming the resist pattern. Examples of the plating method include copper plating, solder plating, nickel plating, and gold plating.

Residual resist patterns after etching can be removed with an organic solvent. Examples of the organic solvent include, but are not limited to, PGMEA (propylene glycol monomethyl ether acetate), PGME (propylene glycol monomethyl ether), EL (ethyl lactate), and the like. The peeling method is not particularly limited, but includes, for example, an immersion method, a spray method, and the like. Also, the wiring board on which the resist pattern is formed may be a multilayer wiring board and may have a small-diameter through hole.

The wiring board obtained in the present embodiment can also be formed by a method of forming a resist pattern, vapor-depositing a metal in a vacuum, and then dissolving the resist pattern with a solution, that is, a lift-off method.

[Underlayer film forming material for lithography]
The underlayer film-forming material for lithography of the present embodiment contains the compound of the present embodiment and/or the resin of the present embodiment. The compound of the present embodiment and/or the resin of the present embodiment preferably accounts for 1 to 100% by mass, preferably 10 to 100% by mass, of the underlayer film-forming material for lithography from the viewpoint of coatability and quality stability. is more preferable, 50 to 100% by mass is more preferable, and 100% by mass is particularly preferable.

The underlayer film-forming material for lithography of this embodiment can be applied to a wet process and has excellent heat resistance and etching resistance. Furthermore, since the underlayer film forming material for lithography of the present embodiment uses the above substances, deterioration of the film during high-temperature baking is suppressed, and an underlayer film having excellent etching resistance to oxygen plasma etching or the like can be formed. can. Furthermore, since the underlayer film-forming material for lithography of the present embodiment has excellent adhesion to the resist layer, an excellent resist pattern can be obtained. The underlayer film-forming material for lithography of the present embodiment may contain an already known underlayer film-forming material for lithography, etc., as long as the effects of the present invention are not impaired.

[Composition for forming underlayer film for lithography]
The underlayer film-forming composition for lithography of the present embodiment contains the underlayer film-forming material for lithography and a solvent.

[solvent]
As the solvent used in the underlayer film-forming composition for lithography of the present embodiment, any known solvent can be appropriately used as long as it dissolves at least the component (A) described above.

Specific examples of the solvent include, but are not limited to, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; cellosolve solvents such as propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate; ethyl lactate and methyl acetate. , Ester solvents such as ethyl acetate, butyl acetate, isoamyl acetate, ethyl lactate, methyl methoxypropionate, methyl hydroxyisobutyrate; alcohol solvents such as methanol, ethanol, isopropanol, 1-ethoxy-2-propanol; toluene, xylene , aromatic hydrocarbons such as anisole. These solvents can be used singly or in combination of two or more.

Among the above solvents, cyclohexanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, methyl hydroxyisobutyrate, and anisole are particularly preferred from the viewpoint of safety.

The content of the solvent is not particularly limited. It is more preferably 000 parts by mass, and even more preferably 200 to 1,000 parts by mass.

[Crosslinking agent]
From the viewpoint of suppressing intermixing, the composition for forming an underlayer film for lithography of the present embodiment may contain a cross-linking agent, if necessary. The cross-linking agent that can be used in the present embodiment is not particularly limited, and for example, those described in International Publication No. 2013/024779 can be used. In addition, in this embodiment, a crosslinking agent can be used individually or in combination of two or more.

Specific examples of cross-linking agents that can be used in the present embodiment include phenol compounds, epoxy compounds, cyanate compounds, amino compounds, benzoxazine compounds, acrylate compounds, melamine compounds, guanamine compounds, glycoluril compounds, urea compounds, and isocyanates. compounds, azide compounds and the like, but are not particularly limited thereto. These cross-linking agents can be used singly or in combination of two or more. Among these, a benzoxazine compound, an epoxy compound, or a cyanate compound is preferred, and a benzoxazine compound is more preferred from the viewpoint of improving etching resistance.

A well-known thing can be used as said phenol compound. Examples of phenols include, but are not limited to, phenol, alkylphenols such as cresols and xylenols, polyhydric phenols such as hydroquinone, polycyclic phenols such as naphthols and naphthalene diols, bisphenol A, Examples include bisphenols such as bisphenol F, polyfunctional phenol compounds such as phenol novolak and phenol aralkyl resins, and the like. Among them, aralkyl-type phenolic resins are preferable from the viewpoint of heat resistance and solubility.

A known epoxy compound can be used as the epoxy compound, and is selected from those having two or more epoxy groups in one molecule. Examples include, but are not limited to, bisphenol A, bisphenol F, 3,3′,5,5′-tetramethyl-bisphenol F, bisphenol S, fluorene bisphenol, 2,2′-biphenol, 3,3′,5,5 '-Tetramethyl-4,4'-dihydroxybiphenol, resorcinol, epoxidized dihydric phenols such as naphthalene diols, tris-(4-hydroxyphenyl)methane, 1,1,2,2-tetrakis(4 -Hydroxyphenyl)ethane, tris(2,3-epoxypropyl)isocyanurate, trimethylolmethane triglycidyl ether, trimethylolpropane triglycidyl ether, triethylolethane triglycidyl ether, phenol novolak, o-cresol novolak, and the like. Epoxidized products of the above phenols, epoxidized products of co-condensation resins of dicyclopentadiene and phenols, epoxidized products of phenol aralkyl resins synthesized from phenols and paraxylylene dichloride, etc., phenols and bischloromethylbiphenyl, etc. and epoxidized naphthol aralkyl resins synthesized from naphthols and paraxylylene dichloride. These epoxy resins may be used alone or in combination of two or more. From the viewpoint of heat resistance and solubility, epoxy resins that are solid at room temperature, such as epoxy resins obtained from phenol aralkyl resins and biphenyl aralkyl resins, are preferred.

The cyanate compound is not particularly limited as long as it is a compound having two or more cyanate groups in one molecule, and known compounds can be used. In this embodiment, preferred cyanate compounds include those having a structure in which the hydroxyl groups of a compound having two or more hydroxyl groups in one molecule are substituted with cyanate groups. Moreover, the cyanate compound preferably has an aromatic group, and a cyanate compound having a structure in which the cyanate group is directly linked to the aromatic group can be preferably used. Examples of such cyanate compounds include, but are not limited to, bisphenol A, bisphenol F, bisphenol M, bisphenol P, bisphenol E, phenol novolak resin, cresol novolak resin, dicyclopentadiene novolak resin, tetramethylbisphenol F, bisphenol A novolak resin, brominated bisphenol A, brominated phenol novolac resin, trifunctional phenol, tetrafunctional phenol, naphthalene type phenol, biphenyl type phenol, phenol aralkyl resin, biphenyl aralkyl resin, naphthol aralkyl resin, dicyclopentadiene aralkyl resin, fat Structures in which hydroxyl groups such as cyclic phenols and phosphorus-containing phenols are substituted with cyanate groups can be mentioned. You may use these cyanate compounds individually or in combination of 2 or more types as appropriate. Moreover, the cyanate compound described above may be in any form of a monomer, an oligomer, or a resin.

Examples of the amino compound include, but are not limited to, m-phenylenediamine, p-phenylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 3, 4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis( 3-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, 2,2-bis[4-(4-aminophenoxy)phenyl] Propane, 2,2-bis[4-(3-aminophenoxy)phenyl]propane, 4,4′-bis(4-aminophenoxy)biphenyl, 4,4′-bis(3-aminophenoxy)biphenyl, bis[ 4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 9,9-bis(4-aminophenyl)fluorene, 9,9-bis(4-amino-3 -chlorophenyl)fluorene, 9,9-bis(4-amino-3-fluorophenyl)fluorene, O-tolidine, m-tolidine, 4,4'-diaminobenzanilide, 2,2'-bis(trifluoromethyl) -4,4'-diaminobiphenyl, 4-aminophenyl-4-aminobenzoate, 2-(4-aminophenyl)-6-aminobenzoxazole and the like. Furthermore, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis [4-(3-aminophenoxy)phenyl]propane, 4,4′-bis(4-aminophenoxy)biphenyl, 4,4′-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy) ) phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether and other aromatic amines, diaminocyclohexane, diaminodicyclohexylmethane, dimethyl-diaminodicyclohexylmethane, tetramethyl-diaminodicyclohexylmethane, diaminodicyclohexylpropane, diamino bicyclo[2.2.1]heptane, bis(aminomethyl)-bicyclo[2.2.1]heptane, 3(4),8(9)-bis(aminomethyl)tricyclo[5.2.1.02 ,6] Alicyclic amines such as decane, 1,3-bisaminomethylcyclohexane and isophoronediamine; aliphatic amines such as ethylenediamine, hexamethylenediamine, octamethylenediamine, decamethylenediamine, diethylenetriamine and triethylenetetramine; are mentioned.

Examples of the benzoxazine compound include, but are not limited to, Pd-type benzoxazine obtained from bifunctional diamines and monofunctional phenols, F- a-type benzoxazine and the like.

Specific examples of the melamine compound include, but are not limited to, hexamethylolmelamine, hexamethoxymethylmelamine, compounds in which 1 to 6 methylol groups of hexamethylolmelamine are methoxymethylated, or mixtures thereof, hexamethoxyethylmelamine. , hexaacyloxymethylmelamine, and hexamethylolmelamine in which 1 to 6 methylol groups are acyloxymethylated, or mixtures thereof.

Specific examples of the guanamine compound are not particularly limited, but for example, tetramethylolguanamine, tetramethoxymethylguanamine, a compound in which 1 to 4 methylol groups of tetramethylolguanamine are methoxymethylated or a mixture thereof, tetramethoxyethylguanamine , tetraacyloxyguanamine, tetramethylolguanamine in which 1 to 4 methylol groups are acyloxymethylated, or a mixture thereof.

Specific examples of the glycoluril compound are not particularly limited. compounds or mixtures thereof, compounds in which 1 to 4 methylol groups of tetramethylolglycoluril are acyloxymethylated, or mixtures thereof.

Specific examples of the urea compound are not particularly limited. etc.

Moreover, in the present embodiment, a cross-linking agent having at least one allyl group may be used from the viewpoint of improving the cross-linkability. Specific examples of cross-linking agents having at least one allyl group include 2,2-bis(3-allyl-4-hydroxyphenyl)propane, 1,1,1,3,3,3-hexafluoro-2 , 2-bis(3-allyl-4-hydroxyphenyl)propane, bis(3-allyl-4-hydroxyphenyl)sulfone, bis(3-allyl-4-hydroxyphenyl)sulfide, bis(3-allyl-4- hydroxyphenyl) ethers and other allylphenols, 2,2-bis(3-allyl-4-cyanatophenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2-bis (3-allyl-4-cyanatophenyl)propane, bis(3-allyl-4-cyanatophenyl)sulfone, bis(3-allyl-4-cyanatophenyl)sulfide, bis(3-allyl-4-cyanatophenyl) anatophenyl) ether, diallyl phthalate, diallyl isophthalate, diallyl terephthalate, triallyl isocyanurate, trimethylolpropane diallyl ether, pentaerythritol allyl ether, etc., but limited to those exemplified above. not to be These may be used alone or as a mixture of two or more. Among these, 2,2-bis(3-allyl-4-hydroxyphenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2-bis(3-allyl-4-hydroxyphenyl) ) Allylphenols such as propane, bis(3-allyl-4-hydroxyphenyl)sulfone, bis(3-allyl-4-hydroxyphenyl)sulfide, bis(3-allyl-4-hydroxyphenyl)ether are preferred. .

In the underlayer film-forming composition for lithography of the present embodiment, the content of the cross-linking agent is not particularly limited, but it is preferably 5 to 50 parts by mass, more preferably 5 to 50 parts by mass with respect to 100 parts by mass of the underlayer film-forming material. is 10 to 40 parts by mass. When the content is within the above preferable range, the mixing phenomenon with the resist layer tends to be suppressed, the antireflection effect is enhanced, and the film formability after cross-linking tends to be enhanced.

[Crosslinking accelerator]
The underlayer film-forming composition for lithography of the present embodiment may optionally contain a cross-linking accelerator for promoting cross-linking and curing reactions.

The cross-linking accelerator is not particularly limited as long as it promotes cross-linking and curing reaction, and examples thereof include amines, imidazoles, organic phosphines, and Lewis acids. These cross-linking accelerators can be used singly or in combination of two or more. Among these, imidazoles and organic phosphines are preferred, and imidazoles are more preferred from the viewpoint of lowering the cross-linking temperature.

Examples of the crosslinking accelerator include, but are not limited to, 1,8-diazabicyclo(5,4,0)undecene-7, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylamino methyl)phenol, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 2-heptadecylimidazole, 2,4,5- Imidazoles such as triphenylimidazole, organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine and phenylphosphine, tetraphenylphosphonium/tetraphenylborate, tetraphenylphosphonium/ethyltriphenylborate, tetrabutyl Examples thereof include tetra-substituted phosphonium/tetra-substituted borate such as phosphonium/tetrabutyl borate, 2-ethyl-4-methylimidazole/tetraphenyl borate, and tetraphenyl boron salts such as N-methylmorpholine/tetraphenyl borate.

The content of the cross-linking accelerator is usually preferably 0.1 to 10 parts by mass, more preferably 0.1 to 10 parts by mass when the total mass of the composition is 100 parts by mass. It is 0.1 to 5 parts by mass, more preferably 0.1 to 3 parts by mass, from the viewpoint of ease and economy.

[Radical polymerization initiator]
The composition for forming an underlayer film for lithography of the present embodiment may optionally contain a radical polymerization initiator. The radical polymerization initiator may be a photopolymerization initiator that initiates radical polymerization with light, or a thermal polymerization initiator that initiates radical polymerization with heat. The radical polymerization initiator can be, for example, at least one selected from the group consisting of ketone-based photopolymerization initiators, organic peroxide-based polymerization initiators and azo-based polymerization initiators.

Such a radical polymerization initiator is not particularly limited, and conventionally used ones can be appropriately employed. For example, 1-hydroxycyclohexylphenyl ketone, benzyl dimethyl ketal, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2 -methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methylpropan-1-one, 2 ,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide and other ketone photoinitiators, methyl ethyl ketone peroxide, cyclohexanone peroxide, methylcyclohexanone peroxide, etc. oxide, methyl acetoacetate peroxide, acetyl acetate peroxide, 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-hexylperoxy)-cyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-butylperoxy)-2-methylcyclohexane, 1,1-bis(t-butylperoxy) oxy)-cyclohexane, 1,1-bis(t-butylperoxy)cyclododecane, 1,1-bis(t-butylperoxy)butane, 2,2-bis(4,4-di-t-butylperoxy) oxycyclohexyl)propane, p-menthane hydroperoxide, diisopropylbenzene hydroperoxide, 1,1,3,3-tetramethylbutyl hydroperoxide, cumene hydroperoxide, t-hexyl hydroperoxide, t-butyl hydroperoxide oxide, α,α'-bis(t-butylperoxy)diisopropylbenzene, dicumyl peroxide, 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane, t-butylcumyl peroxide, Di-t-butyl peroxide, 2,5-dimethyl-2,5-bis(t-butylperoxy)hexyne-3, isobutyryl peroxide, 3,5,5-trimethylhexanoyl peroxide, octanoyl peroxide oxide, lauroyl peroxide, stearoyl peroxide, succinic acid peroxide, m-toluoyl benzoyl peroxide, benzoyl peroxide, di-n-propyl peroxide -oxydicarbonate, diisopropylperoxydicarbonate, bis(4-t-butylcyclohexyl)peroxydicarbonate, di-2-ethoxyethylperoxydicarbonate, di-2-ethoxyhexylperoxydicarbonate, di-3 - methoxybutyl peroxydicarbonate, di-s-butyl peroxydicarbonate, di(3-methyl-3-methoxybutyl)peroxydicarbonate, α,α'-bis(neodecanoylperoxy)diisopropylbenzene, Cumyl peroxyneodecanoate, 1,1,3,3-tetramethylbutyl peroxyneodecanoate, 1-cyclohexyl-1-methylethyl peroxyneodecanoate, t-hexyl peroxyneodecanoate , t-butyl peroxyneodecanoate, t-hexyl peroxypivalate, t-butyl peroxypivalate, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanooate, 2, 5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexanoate, 1-cyclohexyl-1-methylethylperoxy-2-ethylhexanoate, t-hexylperoxy-2-ethylhexanoate , t-butylperoxy-2-ethylhexanoate, t-hexylperoxyisopropyl monocarbonate, t-butylperoxyisobutyrate, t-butylperoxymalate, t-butylperoxy-3,5, 5-trimethylhexanoate, t-butyl peroxylaurate, t-butyl peroxy isopropyl monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-butyl peroxy acetate, t-butyl peroxy- m-toluyl benzoate, t-butyl peroxybenzoate, bis(t-butylperoxy)isophthalate, 2,5-dimethyl-2,5-bis(m-toluylperoxy)hexane, t-hexylperoxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, t-butylperoxyallylmonocarbonate, t-butyltrimethylsilylperoxide, 3,3′,4,4′-tetra(t-butylperoxy) oxycarbonyl)benzophenone, 2,3-dimethyl-2,3-diphenylbutane and other organic peroxide polymerization initiators.

Also, 2-phenylazo-4-methoxy-2,4-dimethylvaleronitrile, 1-[(1-cyano-1-methylethyl)azo]formamide, 1,1′-azobis(cyclohexane-1-carbonitrile), 2,2'-azobis (2-methylbutyronitrile), 2,2'-azobisisobutyronitrile, 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis ( 2-methylpropionamidine) dihydrochloride, 2,2′-azobis(2-methyl-N-phenylpropionamidine) dihydrochloride, 2,2′-azobis[N-(4-chlorophenyl)-2-methylpropionamidine] Dihydrido chloride, 2,2′-azobis[N-(4-hydrophenyl)-2-methylpropionamidine]dihydrochloride, 2,2′-azobis[2-methyl-N-(phenylmethyl)propionamidine]dihydro chloride, 2,2'-azobis[2-methyl-N-(2-propenyl)propionamidine]dihydrochloride, 2,2'-azobis[N-(2-hydroxyethyl)-2-methylpropionamidine]dihydrochloride , 2,2′-azobis[2-(5-methyl-2-imidazolin-2-yl)propane]dihydrochloride, 2,2′-azobis[2-(2-imidazolin-2-yl)propane]dihydrochloride , 2,2′-azobis[2-(4,5,6,7-tetrahydro-1H-1,3-diazepin-2-yl)propane] dihydrochloride, 2,2′-azobis[2-(3, 4,5,6-tetrahydropyrimidin-2-yl)propane]dihydrochloride, 2,2′-azobis[2-(5-hydroxy-3,4,5,6-tetrahydropyrimidin-2-yl)propane]dihydro chloride, 2,2′-azobis[2-[1-(2-hydroxyethyl)-2-imidazolin-2-yl]propane]dihydrochloride, 2,2′-azobis[2-(2-imidazoline-2- yl)propane], 2,2′-azobis[2-methyl-N-[1,1-bis(hydroxymethyl)-2-hydroxyethyl]propionamide], 2,2′-azobis[2-methyl-N -[1,1-bis(hydroxymethyl)ethyl]propionamide], 2,2′-azobis[2-methyl-N-(2-hydroxyethyl)propionamide], 2,2′-azobis(2-methyl propionamide), 2,2' -azobis(2,4,4-trimethylpentane), 2,2'-azobis(2-methylpropane), dimethyl-2,2-azobis(2-methylpropionate), 4,4'-azobis(4 -cyanopentanoic acid), 2,2′-azobis[2-(hydroxymethyl)propionitrile] and other azo polymerization initiators. As the radical polymerization initiator used in the present embodiment, one of these may be used alone or in combination of two or more, and other known polymerization initiators may be used in combination. .

The content of the radical polymerization initiator may be a stoichiometrically necessary amount. It is preferably 0.05 to 25 parts by mass, more preferably 0.1 to 10 parts by mass. When the content of the radical polymerization initiator is 0.05 parts by mass or more, it tends to be possible to prevent insufficient curing, while the content of the radical polymerization initiator is 25 parts by mass or less. In the case of , it tends to be possible to prevent the long-term storage stability at room temperature of the composition for forming an underlayer film for lithography from being impaired.

[Acid generator]
The composition for forming an underlayer film for lithography of the present embodiment may contain an acid generator, if necessary, from the viewpoint of further accelerating the cross-linking reaction by heat. As acid generators, those that generate acid by thermal decomposition, those that generate acid by light irradiation, and the like are known, and any of them can be used.

Although the acid generator is not particularly limited, for example, those described in International Publication No. 2013/024779 can be used. In addition, in this embodiment, an acid generator can be used individually or in combination of 2 or more types.

In the underlayer film-forming composition for lithography of the present embodiment, the content of the acid generator is not particularly limited, but is preferably 0.1 to 50 parts by mass with respect to 100 parts by mass of the underlayer film-forming material. , more preferably 0.5 to 40 parts by mass. When the content is within the above preferred range, the amount of acid generated tends to increase, the cross-linking reaction tends to be enhanced, and the occurrence of the mixing phenomenon with the resist layer tends to be suppressed.

[Basic compound]
Furthermore, the composition for forming an underlayer film for lithography of the present embodiment may contain a basic compound from the viewpoint of improving storage stability.

The basic compound plays a role of a quencher for the acid to prevent the progress of the cross-linking reaction of the acid generated in a trace amount by the acid generator. Examples of such basic compounds include primary, secondary or tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxyl group, Nitrogen-containing compounds having a sulfonyl group, nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, alcoholic nitrogen-containing compounds, amide derivatives, imide derivatives, etc., but are not particularly limited thereto.

The basic compound used in the present embodiment is not particularly limited, and for example, those described in International Publication No. 2013/024779 can be used. In addition, in this embodiment, a basic compound can be used individually or in combination of 2 or more types.

In the underlayer film-forming composition for lithography of the present embodiment, the content of the basic compound is not particularly limited, but is preferably 0.001 to 2 parts by mass with respect to 100 parts by mass of the underlayer film-forming material. , more preferably 0.01 to 1 part by mass. When the content is within the above preferable range, the storage stability tends to be enhanced without excessively impairing the cross-linking reaction.

[Other additives]
In addition, the composition for forming an underlayer film for lithography of the present embodiment may contain other resins and/or compounds for the purpose of imparting thermosetting properties and controlling absorbance. Examples of such other resins and/or compounds include naphthol resin, xylene resin naphthol-modified resin, phenol-modified naphthalene resin, polyhydroxystyrene, dicyclopentadiene resin, (meth)acrylate, dimethacrylate, and trimethacrylate. , tetramethacrylate, vinylnaphthalene, polyacenaphthylene and other naphthalene rings, phenanthrenequinone, fluorene and other biphenyl rings, thiophene, indene and other heteroatom-containing resins and aromatic ring-free resins; Resins or compounds containing an alicyclic structure such as resins, cyclodextrins, adamantane (poly)ols, tricyclodecane (poly)ols, and derivatives thereof may be mentioned, but are not particularly limited thereto. Furthermore, the underlayer film-forming composition for lithography of the present embodiment may contain known additives. Examples of known additives include, but are not limited to, ultraviolet absorbers, surfactants, colorants, nonionic surfactants, and the like.

[Method for forming underlayer film for lithography]
The method for forming an underlayer film for lithography of this embodiment includes the step of forming an underlayer film on a substrate using the underlayer film-forming composition for lithography of this embodiment.

[Method of forming resist pattern using composition for forming underlayer film for lithography]
The method for forming a resist pattern using the composition for forming an underlayer film for lithography of the present embodiment includes the step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography of the present embodiment (A-1 ), a step of forming at least one photoresist layer on the underlayer film (A-2), and a step of irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern. (A-3) and.

[Method for forming circuit pattern using composition for forming underlayer film for lithography]
The method for forming a circuit pattern using the composition for forming an underlayer film for lithography of the present embodiment includes the step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography of the present embodiment (B-1 ), forming an intermediate layer film on the underlayer film using a resist intermediate layer film material containing silicon atoms (B-2), and forming at least one photoresist layer on the intermediate layer film. and, after the step (B-3), a step (B-4) of irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern. , after the step (B-4), etching the intermediate layer film using the resist pattern as a mask to form an intermediate layer film pattern (B-5); and etching the obtained intermediate layer film pattern. A step of etching the underlying film as a mask to form an underlying film pattern (B-6), and a step of etching the substrate using the obtained underlying film pattern as an etching mask to form a pattern on the substrate (B-6). 7) and

The formation method of the underlayer film for lithography of the present embodiment is not particularly limited as long as it is formed from the underlayer film-forming composition for lithography of the present embodiment, and known techniques can be applied. For example, after applying the composition for forming an underlayer film for lithography of the present embodiment onto a substrate by a known coating method such as spin coating or screen printing or a printing method, the organic solvent is removed by volatilization or the like. , can form an underlayer film.

When forming the lower layer film, it is preferable to perform baking in order to suppress the occurrence of the mixing phenomenon with the upper layer resist and promote the cross-linking reaction. In this case, the baking temperature is not particularly limited, but is preferably in the range of 80 to 450.degree. C., more preferably 200 to 400.degree. Also, the baking time is not particularly limited, but it is preferably in the range of 10 to 300 seconds. The thickness of the underlayer film can be appropriately selected according to the required performance, and is not particularly limited. is preferred.

After the underlayer film is formed, a silicon-containing resist layer or a single-layer resist made of ordinary hydrocarbons is placed thereon in the case of a two-layer process, and a silicon-containing intermediate layer is placed thereon in the case of a three-layer process, and then a silicon-containing intermediate layer is placed thereon in the case of a three-layer process. It is preferable to produce a single layer resist layer that does not contain silicon. In this case, a known photoresist material can be used for forming this resist layer.

After forming the underlayer film on the substrate, a silicon-containing resist layer or a conventional hydrocarbon monolayer resist can be formed on the underlayer film in the case of a two-layer process. In the case of a three-layer process, a silicon-containing intermediate layer can be formed on the underlayer film, and a silicon-free monolayer resist layer can be formed on the silicon-containing intermediate layer. In these cases, the photoresist material for forming the resist layer can be appropriately selected from known materials and used, and is not particularly limited.

As a silicon-containing resist material for a two-layer process, from the viewpoint of oxygen gas etching resistance, a silicon atom-containing polymer such as a polysilsesquioxane derivative or a vinylsilane derivative is used as a base polymer, and an organic solvent, an acid generator, A positive photoresist material containing a basic compound or the like, if necessary, is preferably used. Here, as the silicon atom-containing polymer, a known polymer used in this type of resist material can be used.

A polysilsesquioxane-based intermediate layer is preferably used as the silicon-containing intermediate layer for the three-layer process. Reflection tends to be effectively suppressed by providing the intermediate layer with an antireflection film effect. For example, in a 193 nm exposure process, if a material containing many aromatic groups and having high substrate etching resistance is used as the underlayer film, the k value tends to increase and the substrate reflection tends to increase. can reduce the substrate reflection to 0.5% or less. The intermediate layer having such an antireflection effect is not limited to the following, but for 193 nm exposure, an acid- or heat-crosslinkable polysilsesquioxylate having a phenyl group or a silicon-silicon bond-containing light-absorbing group is introduced. Sun is preferably used.

An intermediate layer formed by a chemical vapor deposition (CVD) method can also be used. Although not limited to the following, for example, a SiON film is known as an intermediate layer that is highly effective as an antireflection film produced by a CVD method. In general, forming an intermediate layer by a wet process such as a spin coating method or screen printing is simpler and more cost effective than a CVD method. The upper layer resist in the three-layer process may be either positive type or negative type, and may be the same as a commonly used single layer resist.

Furthermore, the underlayer film in this embodiment can also be used as an antireflection film for a normal single-layer resist or as a base material for suppressing pattern collapse. Since the underlayer film of the present embodiment is excellent in etching resistance for underlayer processing, it can be expected to function as a hard mask for underlayer processing.

When the resist layer is formed from the photoresist material, a wet process such as spin coating or screen printing is preferably used as in the case of forming the underlayer film. After the resist material is applied by spin coating or the like, prebaking is usually performed, and this prebaking is preferably performed at 80 to 180° C. for 10 to 300 seconds. After that, exposure, post-exposure baking (PEB), and development are carried out according to a conventional method, whereby a resist pattern can be obtained. Although the thickness of the resist film is not particularly limited, it is generally preferably 30 to 500 nm, more preferably 50 to 400 nm.

Also, the exposure light may be appropriately selected and used according to the photoresist material to be used. In general, high-energy rays with a wavelength of 300 nm or less, specifically excimer lasers of 248 nm, 193 nm and 157 nm, soft X-rays of 3 to 20 nm, electron beams, X-rays and the like can be used.

In the resist pattern formed by the above method, pattern collapse is suppressed by the underlayer film of the present embodiment. Therefore, by using the underlayer film of this embodiment, a finer pattern can be obtained, and the exposure dose required for obtaining the resist pattern can be reduced.

Next, etching is performed using the obtained resist pattern as a mask. Gas etching is preferably used for etching the lower layer film in the two-layer process. As the gas etching, etching using oxygen gas is suitable. _In addition to oxygen gas, it is also possible to add inert gases such as He and Ar, and CO, _CO2 , _NH3 , SO2, _N2 , _{NO2 and} H2 gases. Gas etching can also be performed using only CO, CO ₂ , NH ₃ , N ₂ , NO _{2 and} H ₂ gases without using oxygen gas. In particular, the latter gas is preferably used for sidewall protection to prevent undercutting of pattern sidewalls.

On the other hand, gas etching is also preferably used for etching the intermediate layer in the three-layer process. As the gas etching, the same one as described in the above two-layer process can be applied. In particular, it is preferable to process the intermediate layer in the three-layer process using a freon-based gas and using a resist pattern as a mask. After that, as described above, the intermediate layer pattern is used as a mask to perform, for example, oxygen gas etching, whereby the lower layer film can be processed.

Here, when forming an inorganic hard mask intermediate layer film as the intermediate layer, a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiON film) is formed by a CVD method, an atomic layer deposition (ALD) method, or the like. be. Although the method for forming the nitride film is not limited to the following, for example, the methods described in Japanese Patent Laying-Open No. 2002-334869 (Patent Document 4) and International Publication No. 2004/066377 (Patent Document 5) can be used. can. Although a photoresist film can be directly formed on such an intermediate layer film, an organic anti-reflective coating (BARC) is formed on the intermediate layer film by spin coating, and a photoresist film is formed thereon. You may

As an intermediate layer, a polysilsesquioxane-based intermediate layer is also preferably used. Reflection tends to be effectively suppressed by giving the resist intermediate layer film an effect as an antireflection film. Specific materials for the polysilsesquioxane-based intermediate layer are not limited to the following. can be used.

Etching of the next substrate can also be carried out by a conventional method. For example, if the substrate is SiO ₂ or SiN, etching mainly using Freon-based gas; Gas-based etching can be performed. When the substrate is etched with Freon-based gas, the silicon-containing resist in the two-layer resist process and the silicon-containing intermediate layer in the three-layer process are stripped at the same time as the substrate is processed. On the other hand, when the substrate is etched with a chlorine-based or bromine-based gas, the silicon-containing resist layer or the silicon-containing intermediate layer is removed separately, and generally, after the substrate is processed, the dry-etching removal is performed with a flon-based gas. .

The underlayer film in this embodiment is characterized by being excellent in etching resistance of these substrates. The substrate can be appropriately selected and used from known substrates, and is not particularly limited, but examples thereof include Si, α-Si, p-Si, SiO ₂ , SiN, SiON, W, TiN, and Al. . The substrate may also be a laminate having a film to be processed (substrate to be processed) on a base material (support). Such films to be processed include various Low-k films such as Si, SiO ₂ , SiON, SiN, p-Si, α-Si, W, W-Si, Al, Cu, and Al-Si, and their stopper films. etc., and usually a material different from that of the substrate (support) is used. Although the thickness of the substrate to be processed or the film to be processed is not particularly limited, it is generally preferably about 50 to 1,000,000 nm, more preferably 75 to 500,000 nm.

[Permanent resist film]
In addition, a resist permanent film can also be produced using the composition, and the resist permanent film formed by applying the composition is a permanent film that remains in the final product after forming a resist pattern as necessary. It is suitable as Specific examples of the permanent film are not particularly limited. In relation to this, thin film transistor protective film, liquid crystal color filter protective film, black matrix, spacer, etc. can be mentioned. In particular, the permanent film made of the composition has excellent heat resistance and moisture resistance, and also has the very excellent advantage of being less susceptible to contamination by sublimation components. Especially for display materials, it becomes a material that has high sensitivity, high heat resistance, and moisture absorption reliability with less deterioration of image quality due to contamination, which is important.

When the composition is used for resist permanent film applications, in addition to the curing agent, various additives such as other resins, surfactants, dyes, fillers, cross-linking agents, and dissolution accelerators are added as necessary. , by dissolving in an organic solvent, it can be a composition for resist permanent film.

The film-forming composition for lithography and the composition for resist permanent film can be prepared by blending the above components and mixing them using a stirrer or the like. When the composition for a resist underlayer film or the composition for a resist permanent film contains fillers or pigments, they can be dispersed or mixed using a dispersing device such as a dissolver, a homogenizer, or a three-roll mill. can be done.

[Method for Purifying Compound and/or Resin]
A method for purifying the compound and/or resin of the present embodiment includes steps of dissolving the compound of the present embodiment and/or the resin of the present embodiment in a solvent to obtain a solution (S), and and a first extraction step of contacting with an acidic aqueous solution to extract impurities in the compound and/or the resin, wherein the solvent used in the step of obtaining the solution (S) is an organic solvent immiscible with water including.

In the first extraction step, the resin is preferably a resin obtained by reacting the compound represented by the formula (A) with a compound having cross-linking reactivity. According to the purification method of the present embodiment, it is possible to reduce the contents of various metals that may be contained as impurities in the compound or resin having the specific structure described above.

More specifically, in the purification method of the present embodiment, the compound and/or the resin are dissolved in a water-immiscible organic solvent to obtain a solution (S), and the solution (S) is converted into an acidic aqueous solution. can be brought into contact with the extraction process. As a result, after the metal content contained in the solution (S) containing the compound and / or resin of the present embodiment is transferred to the aqueous phase, the organic phase and the aqueous phase are separated to reduce the metal content. Compounds and/or resins of the present embodiments can be obtained.

The compound and/or resin of the present embodiment used in the purification method of the present embodiment may be used alone, or two or more of them may be mixed. In addition, the compound and/or resin of the present embodiment may contain various surfactants, various cross-linking agents, various acid generators, various stabilizers, and the like.

The water-immiscible solvent used in the present embodiment is not particularly limited, but is preferably an organic solvent that can be safely applied to the semiconductor manufacturing process. Specifically, the solubility in water at room temperature is less than 30%. Certain organic solvents, more preferably less than 20%, particularly preferably less than 10%, are preferred. The amount of the organic solvent used is preferably 1 to 100 times the mass of the compound and/or resin of the present embodiment used.

Specific examples of water-immiscible solvents include, but are not limited to, ethers such as diethyl ether and diisopropyl ether; esters such as ethyl acetate, n-butyl acetate and isoamyl acetate; methyl ethyl ketone, methyl isobutyl ketone, Ketones such as ethyl isobutyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 2-pentanone; ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate aliphatic hydrocarbons such as n-hexane and n-heptane; aromatic hydrocarbons such as toluene and xylene; and halogenated hydrocarbons such as methylene chloride and chloroform. Among these, toluene, 2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate, ethyl acetate, etc. are preferred, and methyl isobutyl ketone, ethyl acetate, cyclohexanone, propylene glycol monomethyl ether acetate are more preferred. More preferred are methyl isobutyl ketone and ethyl acetate. Methyl isobutyl ketone, ethyl acetate, etc. have a relatively high saturation solubility of the compound and resin of the present embodiment and a relatively low boiling point. can be reduced. Each of these solvents can be used alone, or two or more of them can be used in combination.

The acidic aqueous solution used in the purification method of the present embodiment is not particularly limited, but examples thereof include a mineral acid aqueous solution obtained by dissolving an inorganic compound in water or an organic acid aqueous solution obtained by dissolving an organic compound in water. be done. Examples of the aqueous mineral acid solution include, but are not particularly limited to, aqueous mineral acid solutions obtained by dissolving one or more kinds of mineral acids such as hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid in water. The organic acid aqueous solution is not particularly limited, but examples include acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, and p-toluene. An organic acid aqueous solution obtained by dissolving one or more organic acids such as sulfonic acid and trifluoroacetic acid in water can be mentioned. Each of these acidic aqueous solutions can be used alone, or two or more of them can be used in combination. Among these acidic aqueous solutions, one or more mineral acid aqueous solutions selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid, or acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, It is preferably an aqueous solution of one or more organic acids selected from the group consisting of tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid and trifluoroacetic acid, sulfuric acid, nitric acid, acetic acid, oxalic acid, More preferred are aqueous solutions of carboxylic acids such as tartaric acid and citric acid, more preferred are aqueous solutions of sulfuric acid, oxalic acid, tartaric acid and citric acid, and even more preferred are aqueous solutions of oxalic acid. Polyvalent carboxylic acids such as oxalic acid, tartaric acid, and citric acid coordinate with metal ions to produce a chelating effect, and therefore tend to remove metals more effectively. Moreover, the water used here is preferably water with a low metal content, such as ion-exchanged water, in line with the purpose of the purification method of the present embodiment.

Although the pH of the acidic aqueous solution used in the purification method of the present embodiment is not particularly limited, it is preferable to adjust the acidity of the aqueous solution in consideration of the effects on the compound and/or resin of the present embodiment. The pH range is usually about 0 to 5, preferably about 0 to 3.

The amount of the acidic aqueous solution used in the purification method of the present embodiment is not particularly limited. It is preferable to adjust the amount used. From the above viewpoint, the amount of the acidic aqueous solution used is preferably 10 to 200% by mass, more preferably 20 to 100% by mass, relative to 100% by mass of the solution (S).

In the purification method of the present embodiment, the acidic aqueous solution as described above, the compound and/or resin of the present embodiment, and a solution (S) containing a water-immiscible solvent are brought into contact with each other to obtain a solution A metal component can be extracted from the compound or the resin in (S).

In the purification method of the present embodiment, the solution (S) preferably further contains an organic solvent miscible with water. When an organic solvent miscible with water is included, the amount of the compound and / or resin of the present embodiment can be increased, and the liquid separation is improved, and there is a tendency that purification can be performed with high pot efficiency. be. The method of adding the water-miscible organic solvent is not particularly limited. For example, any of a method of adding in advance to a solution containing an organic solvent, a method of adding in advance to water or an acidic aqueous solution, and a method of adding after contacting a solution containing an organic solvent with water or an acidic aqueous solution may be used. Among these, the method of adding in advance to a solution containing an organic solvent is preferable in terms of workability of operation and ease of control of the amount to be charged.

The water-miscible organic solvent used in the purification method of the present embodiment is not particularly limited, but an organic solvent that can be safely applied to the semiconductor manufacturing process is preferable. The amount of the organic solvent that is miscible with water is not particularly limited as long as the solution phase and the aqueous phase are separated. preferably 0.1 to 50 times by mass, and even more preferably 0.1 to 20 times by mass.

Specific examples of the water-miscible organic solvent used in the purification method of the present embodiment are not limited to the following, but include ethers such as tetrahydrofuran and 1,3-dioxolane; alcohols such as methanol, ethanol, and isopropanol. ketones such as acetone and N-methylpyrrolidone; aliphatic hydrocarbons such as glycol ethers such as ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME), and propylene glycol monoethyl ether; mentioned. Among these, N-methylpyrrolidone, propylene glycol monomethyl ether and the like are preferred, and N-methylpyrrolidone and propylene glycol monomethyl ether are more preferred. Each of these solvents can be used alone, or two or more of them can be used in combination.

The temperature for the extraction treatment is usually 20 to 90°C, preferably 30 to 80°C. The extraction operation is performed, for example, by mixing well by stirring or the like, and then allowing the mixture to stand still. As a result, the metal contained in the solution containing the compound and/or resin of the present embodiment and the organic solvent migrates to the aqueous phase. In addition, this operation reduces the acidity of the solution, and can suppress deterioration of the compound and/or resin of the present embodiment.

The mixed solution is separated into a solution phase containing the compound and/or resin of the present embodiment and a solvent and an aqueous phase by standing, so that the compound and/or resin of the present embodiment and the solvent are separated by decantation or the like. Collect the solution phase containing The time for standing is not particularly limited, but it is preferable to adjust the time for standing from the viewpoint of better separation of the solution phase containing the solvent and the aqueous phase. Usually, the standing time is 1 minute or longer, preferably 10 minutes or longer, and more preferably 30 minutes or longer. The extraction process may be performed only once, but it is also effective to repeat the operations of mixing, standing, and separating multiple times.

In the purification method of the present embodiment, after the first extraction step, the solution phase containing the compound or the resin is further brought into contact with water to extract impurities in the compound or the resin (second extraction step ) is preferably included. Specifically, for example, after performing the extraction treatment using an acidic aqueous solution, the solution phase containing the recovered compound and/or resin of the present embodiment and a solvent extracted from the aqueous solution is further treated with water. It is preferably subjected to an extraction treatment. The extraction treatment with water is not particularly limited, but can be performed, for example, by mixing the solution phase and water well by stirring or the like, and then allowing the resulting mixed solution to stand still. The mixed solution after standing is separated into a solution phase containing the compound and/or resin of the present embodiment and a solvent, and an aqueous phase, so that the compound and/or resin of the present embodiment and/or the solvent are separated by decantation or the like. can be recovered.

Moreover, the water used here is preferably water with a low metal content, such as ion-exchanged water, in line with the purpose of the present embodiment. The extraction process may be performed only once, but it is also effective to repeat the operations of mixing, standing, and separating multiple times. In the extraction process, conditions such as the ratio of both used, temperature, time, etc. are not particularly limited, but may be the same as in the above contact process with the acidic aqueous solution.

Water that may be mixed in the thus obtained solution containing the compound and/or resin of the present embodiment and a solvent can be easily removed by performing an operation such as distillation under reduced pressure. In addition, if necessary, a solvent can be added to the above solution to adjust the concentration of the compound and/or resin of the present embodiment to an arbitrary concentration.

The method for isolating the compound and/or resin of the present embodiment from the resulting solution containing the compound and/or resin of the present embodiment and a solvent is not particularly limited, and may be removal under reduced pressure, separation by reprecipitation, and A known method such as a combination thereof can be used. If necessary, known treatments such as concentration operation, filtration operation, centrifugation operation, and drying operation can be performed.

EXAMPLES The embodiments of the present invention will now be described more specifically with reference to Examples. However, the present embodiment is not particularly limited to these examples.

The evaluation method of the compound is as follows.
<Measurement of thermal decomposition temperature>
Using an EXSTAR6000 DSC device manufactured by SII Nanotechnology Co., Ltd., about 5 mg of a sample was placed in a non-sealed aluminum container and heated to 500° C. at a heating rate of 10° C./min in a nitrogen gas (30 ml/min) stream. At that time, the temperature at which the decrease appeared in the baseline was taken as the thermal decomposition temperature.

<Method for testing heat resistance>
Using an EXSTAR6000 DSC device manufactured by SII Nanotechnology Co., Ltd., about 5 mg of a sample was placed in a non-sealed aluminum container and heated to 500° C. at a heating rate of 10° C./min in a nitrogen gas (30 ml/min) stream. At that time, the temperature at which the decrease appeared in the baseline was defined as the thermal decomposition temperature (Tg), and the heat resistance was evaluated according to the following criteria.
Rating A: Pyrolysis temperature ≥ 150°C
Rating C: pyrolysis temperature <150°C

<Solubility>
At 23° C., the amount of the compound dissolved in propylene glycol monomethyl ether acetate (PGMEA) was evaluated according to the following criteria.
Evaluation A: 30% by mass or more Evaluation C: Less than 30% by mass

(Synthesis Example 1) Synthesis of BisN-1 A vessel with an inner volume of 100 ml equipped with a stirrer, a condenser and a burette was prepared. In this container, 1.52 g (9.5 mmol) of 2,7-dihydroxynaphthalene (manufactured by Sigma-Aldrich Co., Ltd.), 0.9 g (4.7 mmol) of 4-cyclohexylbenzaldehyde (manufactured by Mitsubishi Gas Chemical Co., Ltd.), and 1 , 4-dioxane and 0.4 g (2.3 mmol) of p-toluenesulfonic acid were added to prepare a reaction solution. The reaction solution was stirred at 90° C. for 3.5 hours to carry out the reaction. Next, the reaction solution is cooled to 40° C., 10 ml of hexane is added dropwise and cooled to 10° C. to precipitate a reaction product, which is filtered, washed with hexane, and then separated and purified by column chromatography. 0.6 g of the target compound (BisN-1) represented by the following formula was obtained.
The following peaks were found by 400 MHz- ¹ H-NMR, and it was confirmed to have the chemical structure of the following formula.
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 9.2 (2H, OH), 6.8-7.8 (14H, Ph-H), 1.4-2.7 (11H, cHx-H), 5.3 (1H , CH)

(Synthesis Example 2) Synthesis of BisN-2 A vessel with an inner volume of 100 ml equipped with a stirrer, a condenser and a burette was prepared. In this container, 1.52 g (9.5 mmol) of 2,6-dihydroxynaphthalene (manufactured by Sigma-Aldrich Co., Ltd.), 0.9 g (4.7 mmol) of 4-cyclohexylbenzaldehyde (manufactured by Mitsubishi Gas Chemical Co., Ltd.), and 1 , 4-dioxane and 0.4 g (2.3 mmol) of p-toluenesulfonic acid were added to prepare a reaction solution. The reaction solution was stirred at 90° C. for 3.5 hours to carry out the reaction. Next, the reaction solution is cooled to 40° C., 10 ml of hexane is added dropwise and cooled to 10° C. to precipitate a reaction product, which is filtered, washed with hexane, and then separated and purified by column chromatography. 0.4 g of the target compound (BisN-2) represented by the following formula was obtained.
The following peaks were found by 400 MHz- ¹ H-NMR, confirming that the compound had the chemical structure of the following formula.
¹ H-NMR: (d-DMSO, internal standard TMS)
δ (ppm) 9.2 (2H, OH), 6.7-7.8 (14H, Ph-H), 1.4-2.7 (11H, cHx-H), 5.3 (1H , CH)

(Synthesis Example 3) Synthesis of Resin (R1-BisN-1) A four-necked flask with an inner volume of 1 L and capable of bottom extraction was prepared, equipped with a Dimroth condenser, a thermometer and a stirring blade. In this four-necked flask, in a nitrogen stream, 33.2 g (70 mmol, manufactured by Mitsubishi Gas Chemical Co., Ltd.) of the compound (BisN-1) obtained in Synthesis Example 1, 21.0 g of a 40% by mass formalin aqueous solution (formaldehyde 280 mmol, manufactured by Mitsubishi Gas Chemical Co., Ltd.) and 0.97 mL of 98% by mass sulfuric acid (manufactured by Kanto Chemical Co., Ltd.) were charged and reacted for 7 hours while refluxing at 100° C. under normal pressure. After that, 180.0 g of ortho-xylene (special reagent grade manufactured by Wako Pure Chemical Industries, Ltd.) was added as a diluting solvent to the reaction solution, and after standing, the lower aqueous phase was removed. Furthermore, neutralization and washing with water were carried out, and ortho-xylene was distilled off under reduced pressure to obtain 31.7 g of a brown solid resin (R1-BisN-1).

The resulting resin (R1-BisN-1) had Mn: 1875, Mw: 3610, and Mw/Mn: 1.93.

(Synthesis Example 4) Synthesis of Resin (R2-BisN-1) A four-necked flask with an inner volume of 1 L and capable of bottom extraction was prepared, equipped with a Dimroth condenser, a thermometer and a stirring blade. Into this four-necked flask, 33.2 g (70 mmol, manufactured by Mitsubishi Gas Chemical Co., Ltd.) of the compound (BisN-1) obtained in Synthesis Example 1 and 50.9 g (280 mmol, Mitsubishi Gas Chemical Co., Ltd.), 100 mL of anisole (Kanto Chemical Co., Ltd.), and 10 mL of oxalic acid dihydrate (Kanto Chemical Co., Ltd.) were charged and reacted under normal pressure at 100° C. for 7 hours while refluxing. let me After that, 180.0 g of ortho-xylene (special reagent grade manufactured by Wako Pure Chemical Industries, Ltd.) was added as a diluting solvent to the reaction solution, and after standing, the lower aqueous phase was removed. Further, neutralization and washing with water were carried out, and the organic phase solvent and unreacted 4-biphenylaldehyde were distilled off under reduced pressure to obtain 37.5 g of a brown solid resin (R2-BisN-1).

The resulting resin (R2-BisN-1) had Mn: 1610, Mw: 2567 and Mw/Mn: 1.59.

[Comparative Example 1]
A 10 L four-necked flask capable of bottom extraction, equipped with a Dimroth condenser, a thermometer and a stirring blade was prepared. In this four-necked flask, 1.09 kg of 1,5-dimethylnaphthalene (7 mol, manufactured by Mitsubishi Gas Chemical Co., Ltd.), 2.1 kg of 40 mass% formalin aqueous solution (28 mol as formaldehyde, Mitsubishi Gas Chemical Co., Ltd.) )) and 0.97 mL of 98% by mass sulfuric acid (manufactured by Kanto Kagaku Co., Ltd.) were charged, and the mixture was reacted for 7 hours while refluxing at 100° C. under normal pressure. After that, 1.8 kg of ethylbenzene (special reagent grade manufactured by Wako Pure Chemical Industries, Ltd.) was added as a diluting solvent to the reaction solution, and after standing, the lower aqueous phase was removed. Furthermore, neutralization and washing with water were carried out, and ethylbenzene and unreacted 1,5-dimethylnaphthalene were distilled off under reduced pressure to obtain 1.25 kg of light brown solid dimethylnaphthalene formaldehyde resin.

Subsequently, a four-necked flask with an internal volume of 0.5 L equipped with a Dimroth condenser, a thermometer and a stirring blade was prepared. In this four-necked flask, 100 g (0.51 mol) of the dimethylnaphthalene formaldehyde resin obtained as described above and 0.05 g of p-toluenesulfonic acid were charged under a nitrogen stream, and the temperature was raised to 190 ° C. After heating for 1 hour, it was stirred. After that, 52.0 g (0.36 mol) of 1-naphthol was further added, and the mixture was further heated to 220° C. and reacted for 2 hours. After dilution with the solvent, neutralization and washing were carried out, and the solvent was removed under reduced pressure to obtain 126.1 g of modified resin (CR-1) as a dark brown solid.

[Examples 1-1 to 2-2]
Table 1 shows the results of evaluating the solubility in propylene glycol monomethyl ether acetate (PGMEA) using BisN-1, BisN-2, R1-BisN-1 and R2-BisN-1.

表１から明らかなように、実施例１－１～２－２で用いた化合物は、溶媒への溶解性に優れることが確認できた。

As is clear from Table 1, the compounds used in Examples 1-1 to 2-2 were confirmed to have excellent solubility in solvents.

[Examples 3-4, Comparative Example 2]
(Heat resistance and resist performance)
Table 2 shows the results of heat resistance tests and resist performance evaluations using BisN-1, BisN-2 and CR-1.

(Preparation of resist composition)
Using each compound synthesized above, a resist composition was prepared according to the composition shown in Table 2. Among the components of the resist composition shown in Table 2, the following acid generator (C), acid diffusion controller (E) and solvent were used.
Acid generator (C)
P-1: Triphenylbenzenesulfonium trifluoromethanesulfonate (Midori Chemical Co., Ltd.)
Acid diffusion controller (E)
Q-1: Trioctylamine (Tokyo Chemical Industry Co., Ltd.)
Solvent S-1: propylene glycol monomethyl ether (Tokyo Chemical Industry Co., Ltd.)

(Method for evaluating resist performance of resist composition)
A uniform resist composition was spin-coated on a clean silicon wafer and then pre-exposure baked (PB) in an oven at 110° C. to form a resist film with a thickness of 60 nm. The resulting resist film was irradiated with an electron beam with a line-and-space setting of 1:1 at intervals of 50 nm using an electron beam lithography system (ELS-7500, manufactured by Elionix Co., Ltd.). After the irradiation, each resist film was heated at a predetermined temperature for 90 seconds, and developed by being immersed in a TMAH 2.38% by mass alkaline developer for 60 seconds. Thereafter, the resist film was washed with ultrapure water for 30 seconds and dried to form a positive resist pattern. The lines and spaces of the formed resist pattern were observed with a scanning electron microscope (S-4800, manufactured by Hitachi High Technology Co., Ltd.) to evaluate the reactivity of the resist composition to electron beam irradiation.

As is clear from Table 2, it was confirmed that the compounds used in Examples 3 and 4 had good heat resistance, but the compound used in Comparative Example 2 had poor heat resistance.

As for the resist pattern evaluation, in Examples 3 and 4, good resist patterns were obtained by irradiating electron beams with a line-and-space setting of 1:1 with an interval of 50 nm. On the other hand, in Comparative Example 2, a good resist pattern could not be obtained.

As described above, the compound satisfying the requirements of the present invention has higher heat resistance than the comparative compound (CR-1), and can provide a good resist pattern shape. As long as the requirements of the present invention are satisfied, compounds other than the compounds described in the examples exhibit similar effects.

[Examples 5 to 6, Comparative Example 3]
(Preparation of radiation-sensitive composition)
The components shown in Table 3 were prepared to form a uniform solution, and the resulting uniform solution was filtered through a Teflon (registered trademark) membrane filter with a pore size of 0.1 μm to prepare a radiation-sensitive composition. Each prepared radiation-sensitive composition was evaluated as follows.

As the resist base material in Comparative Example 3, the following material was used.
PHS-1: Polyhydroxystyrene Mw = 8000 (Sigma-Aldrich)
The following was used as the photoactive compound (B).
B-1: Naphthoquinonediazide-based photosensitizer of chemical structural formula (G) (4NT-300, Toyo Gosei Co., Ltd.)
The following solvents were used.
S-1: Propylene glycol monomethyl ether (Tokyo Chemical Industry Co., Ltd.)

(Evaluation of resist performance of radiation-sensitive composition)
After the radiation-sensitive composition obtained above was spin-coated on a clean silicon wafer, it was pre-exposure baked (PB) in an oven at 110° C. to form a resist film with a thickness of 200 nm. The resist film was exposed to ultraviolet rays using an ultraviolet exposure apparatus (mask aligner MA-10 manufactured by Mikasa). An ultra-high pressure mercury lamp (relative intensity ratio of g-line:h-line:i-line:j-line=100:80:90:60) was used as the ultraviolet lamp. After the irradiation, the resist film was heated at 110° C. for 90 seconds and developed by being immersed in a TMAH 2.38 mass % alkaline developer for 60 seconds. Thereafter, the resist film was washed with ultrapure water for 30 seconds and dried to form a positive resist pattern of 5 μm.

The lines and spaces obtained in the formed resist pattern were observed with a scanning electron microscope (S-4800 manufactured by Hitachi High Technology Co., Ltd.). Line edge roughness was evaluated as good when the unevenness of the pattern was less than 50 nm.

When the radiation-sensitive compositions in Examples 5 and 6 were used, a good resist pattern with a resolution of 5 μm could be obtained. Moreover, the roughness of the pattern was small and good.

On the other hand, when the radiation-sensitive composition in Comparative Example 3 was used, a good resist pattern with a resolution of 5 μm could be obtained. However, the roughness of the pattern was large and unsatisfactory.

As described above, in Examples 5 and 6, compared with Comparative Example 3, it was found that a resist pattern with less roughness and a better shape could be formed. Radiation-sensitive compositions other than those described in the examples exhibit similar effects as long as they satisfy the requirements of the present invention described above.

The compounds obtained in Synthesis Examples 1 and 2 have relatively low molecular weights and low viscosities, and both have glass transition temperatures as low as 150° C. or lower. The material can be relatively advantageously enhanced in embedding properties and flatness of the film surface. Moreover, all of them have a thermal decomposition temperature of 150° C. or higher (evaluation A), and have high heat resistance, so they can be used even under high-temperature baking conditions.

[Examples 7 to 10, Examples 7A to 10A, Comparative Example 4]
(Preparation of composition for forming underlayer film for lithography)
A composition for forming an underlayer film for lithography was prepared so as to have the composition shown in Table 4. Next, these compositions for forming an underlayer film for lithography were spin-coated on a silicon substrate, and then baked at 240° C. for 60 seconds and further at 400° C. for 120 seconds to prepare underlayer films each having a thickness of 200 nm. . The following acid generators, cross-linking agents and organic solvents were used.
Acid generator: Ditert-butyldiphenyliodonium nonafluoromethanesulfonate (DTDPI) manufactured by Midori Chemical Co., Ltd.
Cross-linking agent: Nikalac MX270 (Nikalac) manufactured by Sanwa Chemical Co., Ltd.
Organic solvent: propylene glycol monomethyl ether acetate (PGMEA)
Novolac: PSM4357 manufactured by Gunei Chemical Co., Ltd.

Next, an etching test was performed under the conditions shown below to evaluate the etching resistance. Table 3 shows the evaluation results.

[Etching test]
Etching device: RIE-10NR manufactured by Samco International
Output: 50W
Pressure: 20Pa
Time: 2min
Etching gas Ar gas flow rate: CF4 gas flow rate: _O2 gas flow rate = 50: ₅ :5 (sccm)

(Evaluation of etching resistance)
Etching resistance was evaluated by the following procedure. First, a novolac underlayer film was produced under the above conditions except for using novolak (PSM4357 manufactured by Gun Ei Kagaku Co., Ltd.). Then, the above-described etching test was performed on this novolac underlayer film, and the etching rate at that time was measured.

Next, underlayer films of Examples 7 to 10, Examples 7A to 10A, and Comparative Example 4 were prepared under the same conditions as for the novolac underlayer film, and the etching test was performed in the same manner. It was measured.

Using the etching rate of the novolac underlayer film as a reference, the etching resistance was evaluated according to the following evaluation criteria.
[Evaluation criteria]
A: The etching rate is less than −10% compared to the novolac underlayer film B: The etching rate is −10% to +5% compared to the novolak underlayer film
C: The etching rate is more than +5% compared to the novolak underlayer film

It was found that in Examples 7 to 10 and Examples 7A to 10A, an etching rate superior to that of the novolak underlayer film was exhibited. On the other hand, in Comparative Example 4, it was found that the etching rate was inferior to that of the novolak underlayer film.

[Examples 11 to 14, 11A to 14A, Comparative Example 5]
Next, the composition for forming an underlayer film for lithography used in Examples 7 to 10, Examples 7A to 10A, and Comparative Example 4 was coated on a 60 nm line-and-space SiO ₂ substrate with a film thickness of 80 nm, and heated at 240°C. A 90 nm Underlayer film was formed by baking for 60 seconds at .

(Evaluation of embeddability)
Evaluation of embeddability was performed by the following procedure. A cross-section of the film obtained under the above conditions was cut out and observed with an electron beam microscope to evaluate embeddability.

[Evaluation criteria]
A: The underlayer film is embedded without defects in the uneven portions of the 60 nm line-and-space SiO ₂ substrate.
C: The uneven part of the 60 nm line and space SiO ₂ substrate has defects and is not filled with the underlying film.

In Examples 11 to 14 and Examples 11A to 14A, it was found that the embedding property was better than that of the novolac underlayer film.

[Example 15]
Next, the composition for forming an underlayer film for lithography used in Example 7 was applied onto a _SiO2 substrate having a film thickness of 300 nm, and baked at 240°C for 60 seconds and further at 400°C for 120 seconds to obtain a film thickness. An underlayer film of 85 nm was formed. An ArF resist solution was applied on the underlayer film and baked at 130° C. for 60 seconds to form a photoresist layer with a film thickness of 140 nm.

As the ArF resist solution, 5 parts by mass of the compound of the following formula (16), 1 part by mass of triphenylsulfonium nonafluoromethanesulfonate, 2 parts by mass of tributylamine, and 92 parts by mass of PGMEA were blended. The prepared one was used.

（式（１６）中、４０、４０、２０とあるのは、各構成単位の比率を示すものであり、ブロック共重合体を示すものではない。）A compound of the following formula (16) was prepared as follows. That is, 4.15 g of 2-methyl-2-methacryloyloxyadamantane, 3.00 g of methacryloyloxy-γ-butyrolactone, 2.08 g of 3-hydroxy-1-adamantyl methacrylate, and 0.38 g of azobisisobutyronitrile were added to tetrahydrofuran. It was made to melt|dissolve in 80 mL and it was set as the reaction solution. This reaction solution was polymerized for 22 hours while maintaining the reaction temperature at 63° C. under a nitrogen atmosphere, and then added dropwise to 400 mL of n-hexane. The produced resin thus obtained was coagulated and purified, and the produced white powder was filtered and dried under reduced pressure at 40° C. overnight to obtain a compound represented by the following formula (16).

(In formula (16), 40, 40, and 20 indicate the ratio of each structural unit, and do not indicate a block copolymer.)

Then, using an electron beam lithography system (Elionix; ELS-7500, 50 keV), the photoresist layer is exposed, baked (PEB) at 115 ° C. for 90 seconds, and 2.38% by mass of tetramethylammonium hydroxide ( A positive resist pattern was obtained by developing with an aqueous TMAH) solution for 60 seconds.

[Comparative Example 6]
A photoresist layer was formed directly on the SiO ₂ substrate in the same manner as in Example 15, except that no underlayer film was formed, to obtain a positive resist pattern.

[evaluation]
For each of Example 15 and Comparative Example 6, the shapes of the obtained 45 nm L/S (1:1) and 80 nm L/S (1:1) resist patterns were observed with an electron microscope (S-4800) manufactured by Hitachi, Ltd. was observed using With respect to the shape of the resist pattern after development, a resist pattern with good rectangularity without pattern collapse was evaluated as good, and a non-perfect resist pattern was evaluated as unsatisfactory. Further, as a result of the observation, the minimum line width with good rectangularity without pattern collapse was used as an index for evaluation as resolution. Further, the sensitivity was defined as the minimum energy amount of electron beams capable of drawing a good pattern shape, and this was used as an index for evaluation. Table 6 shows the results.

As is clear from Table 6, it was confirmed that the underlayer film of Example 15 was significantly superior to that of Comparative Example 6 in both resolution and sensitivity. Moreover, it was confirmed that the shape of the resist pattern after development had no pattern collapse and had good rectangularity. Further, the difference in resist pattern shape after development indicated that the underlayer film-forming material for lithography in Example 15 had good adhesion to the resist material.

[Example 16]
The composition for forming an underlayer film for lithography used in Example 7 was coated on a _SiO2 substrate with a film thickness of 300 nm, and baked at 240°C for 60 seconds and further at 400°C for 120 seconds to form a 90nm-thick underlayer. A film was formed. A silicon-containing intermediate layer material was applied onto the underlayer film and baked at 200° C. for 60 seconds to form an intermediate layer film having a thickness of 35 nm. Further, the ArF resist solution was applied onto the intermediate layer film and baked at 130° C. for 60 seconds to form a photoresist layer with a film thickness of 150 nm. As the silicon-containing intermediate layer material, a silicon atom-containing polymer described in <Synthesis Example 1> of JP-A-2007-226170 was used.

Next, using an electron beam lithography system (manufactured by Elionix; ELS-7500, 50 keV), the photoresist layer is mask-exposed, baked (PEB) at 115 ° C. for 90 seconds, and 2.38% by mass of tetramethylammonium hydroxide. A positive resist pattern of 45 nm L/S (1:1) was obtained by developing with a (TMAH) aqueous solution for 60 seconds.

After that, using RIE-10NR manufactured by Samco International, the obtained resist pattern was used as a mask to dry-etch the silicon-containing intermediate layer film (SOG). Dry etching processing of the lower layer film used as a mask and dry etching processing of the SiO ₂ film using the obtained lower layer film pattern as a mask were sequentially performed.

Each etching condition is as shown below.
Conditions for etching the resist pattern to the resist intermediate layer film
Output: 50W
Pressure: 20Pa
Time: 1 minute
Etching gas Ar gas flow rate: CF4 gas flow rate: _O2 gas flow rate = 50: ₈ :2 (sccm)
Conditions for etching the resist intermediate film pattern to the resist underlayer film
Output: 50W
Pressure: 20Pa
Time: 2min
Etching gas Ar gas flow rate: CF4 gas flow rate: _O2 gas flow rate = 50: ₅ :5 (sccm)
Etching conditions for the _SiO2 film of the resist underlayer film pattern
Output: 50W
Pressure: 20Pa
Time: 2min
_Etching gas Ar gas flow rate: _C5F12 gas flow rate: _C2F6 gas flow rate: _{O2 gas} flow rate
= 50:4:3:1 (sccm)

[evaluation]
The cross section of the pattern of Example 16 obtained as described above (the shape of the SiO ₂ film after etching) was observed using an electron microscope (S-4800) manufactured by Hitachi, Ltd., and the lower layer of the present invention was observed. In the example using the film, it was confirmed that the shape of the SiO ₂ film after etching in the multi-layer resist processing was rectangular, and no defects were observed.

The present invention is a compound that can be used as a component of a photoresist, a resin raw material for electric and electronic parts, a curable resin raw material such as a photocurable resin, a resin raw material for structural materials, or a resin curing agent. , has industrial applicability.

Claims (11)

An underlayer film-forming material for lithography, containing one or more selected from the group consisting of a compound represented by the following formula (A) and a resin having a structural unit derived from the compound represented by the following formula (A) .

(In formula (A), ^RY is a hydrogen atom,
R ^Z is a cyclohexylphenyl group;
Each R ^T is independently an optionally substituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or 6 to 30 carbon atoms which may be substituted. aryl group, an alkenyl group having 2 to 30 carbon atoms which may have a substituent, an alkoxy group having 1 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxyl group, a thiol group, a group in which the hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, or a hydroxyl group, and the alkyl group, the aryl group, the alkenyl group, and the alkoxy group are ether bonds, ketone bonds, or ester bonds. may contain
wherein at least one of R ^T is a hydroxyl group;
each n is independently an integer from 0 to 8, wherein at least one of n is an integer from 1 to 8;
m is 1;
k is each independently an integer of 0 to 2; ) . 2. The underlayer film-forming material for lithography according to claim 1, wherein the compound represented by the formula (A) is a compound represented by the following formula (1).

(In Formula (1), R ^Y , R ^Z , m and k have the same meanings as those described in Formula (A) above.
Each R ^3A is independently an optionally substituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or 6 to 30 carbon atoms which may be substituted. an aryl group, an alkenyl group having 2 to 30 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, a carboxyl group or a thiol group,
each R ^4A is independently a hydrogen atom or an acid-labile group,
wherein at least one of R ^4A is a hydrogen atom;
Each m ^6A is independently an integer of 0-7. ) 3. The underlayer film-forming material for lithography according to claim 2, wherein the compound represented by the formula (1) is a compound represented by the following formula (1').

(In formula (1′), R ^Z has the same definition as in formula (A) above.) 4. The underlayer film-forming material for lithography according to claim 3, wherein the compound represented by the formula (1') is a compound represented by the following formula (2).

5. The underlayer film-forming material for lithography according to claim 4, wherein the compound represented by the formula (2) is a compound represented by the following formula (2-1) or (2-2).

an underlayer film-forming material for lithography according to any one of claims 1 to 5 ;
A composition for forming an underlayer film for lithography, comprising a solvent. 7. The composition for forming an underlayer film for lithography according to claim 6 , further comprising an acid generator. 8. The composition for forming an underlayer film for lithography according to claim 6 , further comprising a cross - linking agent. A method for producing an underlayer film for lithography, comprising the step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography according to any one of claims 6 to 8 . A step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography according to any one of claims 6 to 8 ;
forming at least one photoresist layer on the underlayer film;
and a step of irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern. A step of forming an underlayer film on a substrate using the composition for forming an underlayer film for lithography according to any one of claims 6 to 8 ;
forming an intermediate layer film on the underlayer film using a resist intermediate layer film material containing silicon atoms;
forming at least one photoresist layer on the intermediate layer film;
a step of irradiating a predetermined region of the photoresist layer with radiation and developing to form a resist pattern;
forming an intermediate layer film pattern by etching the intermediate layer film using the resist pattern as a mask;
forming an underlayer film pattern by etching the underlayer film using the intermediate layer film pattern as an etching mask;
and forming a pattern on the substrate by etching the substrate using the underlying film pattern as an etching mask.