JP7280206B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7280206B2
JP7280206B2 JP2020001869A JP2020001869A JP7280206B2 JP 7280206 B2 JP7280206 B2 JP 7280206B2 JP 2020001869 A JP2020001869 A JP 2020001869A JP 2020001869 A JP2020001869 A JP 2020001869A JP 7280206 B2 JP7280206 B2 JP 7280206B2
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JP
Japan
Prior art keywords
semiconductor device
potential
partial region
electrically connected
capacitance
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Active
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JP2020001869A
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English (en)
Japanese (ja)
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JP2021111676A5 (enExample
JP2021111676A (ja
Inventor
雅彦 蔵口
瑛祐 梶原
健太郎 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2020001869A priority Critical patent/JP7280206B2/ja
Priority to US17/018,009 priority patent/US11362653B2/en
Publication of JP2021111676A publication Critical patent/JP2021111676A/ja
Publication of JP2021111676A5 publication Critical patent/JP2021111676A5/ja
Application granted granted Critical
Publication of JP7280206B2 publication Critical patent/JP7280206B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020001869A 2020-01-09 2020-01-09 半導体装置 Active JP7280206B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020001869A JP7280206B2 (ja) 2020-01-09 2020-01-09 半導体装置
US17/018,009 US11362653B2 (en) 2020-01-09 2020-09-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020001869A JP7280206B2 (ja) 2020-01-09 2020-01-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2021111676A JP2021111676A (ja) 2021-08-02
JP2021111676A5 JP2021111676A5 (enExample) 2022-04-14
JP7280206B2 true JP7280206B2 (ja) 2023-05-23

Family

ID=76763641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020001869A Active JP7280206B2 (ja) 2020-01-09 2020-01-09 半導体装置

Country Status (2)

Country Link
US (1) US11362653B2 (enExample)
JP (1) JP7280206B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613666B (zh) * 2020-06-04 2023-04-18 英诺赛科（珠海）科技有限公司 半导体组件及其制造方法
WO2023107106A1 (en) 2021-12-08 2023-06-15 Analog Devices, Inc. Dynamic threshold voltage control of power amplifiers

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009504A (ja) 2009-06-26 2011-01-13 Panasonic Corp 電力変換装置
JP2012248753A (ja) 2011-05-30 2012-12-13 Panasonic Corp スイッチ装置
JP2013062298A (ja) 2011-09-12 2013-04-04 Toshiba Corp 窒化物半導体装置
US20150371987A1 (en) 2014-06-23 2015-12-24 International Rectifier Corporation Group III-V HEMT Having a Diode Controlled Substrate
JP2017055071A (ja) 2015-09-11 2017-03-16 株式会社東芝 半導体装置、駆動制御装置、および駆動制御方法
CN207183255U (zh) 2017-08-30 2018-04-03 广东省半导体产业技术研究院 一种背面场板结构hemt器件
JP2019220557A (ja) 2018-06-19 2019-12-26 株式会社東芝 半導体装置及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3481225B2 (ja) 2000-11-21 2003-12-22 松下電器産業株式会社 半導体装置及び通信システム用機器
TWI288435B (en) 2000-11-21 2007-10-11 Matsushita Electric Industrial Co Ltd Semiconductor device and equipment for communication system
JP2007128994A (ja) 2005-11-02 2007-05-24 New Japan Radio Co Ltd 半導体装置
JP5439725B2 (ja) * 2008-02-20 2014-03-12 サンケン電気株式会社 半導体スイッチング装置
US8519438B2 (en) * 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
EP2466959A3 (en) 2009-09-18 2013-01-09 NEC Corporation Communication system and communication controlling method
CN102612753A (zh) 2009-11-30 2012-07-25 松下电器产业株式会社 双向开关
JP5765978B2 (ja) 2011-03-15 2015-08-19 トランスフォーム・ジャパン株式会社 半導体素子およびその駆動方法
JP2014027253A (ja) * 2012-06-22 2014-02-06 Toshiba Corp 整流回路
JP6223729B2 (ja) * 2013-06-25 2017-11-01 株式会社東芝 半導体装置
US9007117B2 (en) * 2013-08-02 2015-04-14 Infineon Technologies Dresden Gmbh Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor
JP6901880B2 (ja) 2017-03-17 2021-07-14 株式会社東芝 窒化物半導体装置
JP6764375B2 (ja) 2017-06-26 2020-09-30 日本電信電話株式会社 電界効果型トランジスタ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009504A (ja) 2009-06-26 2011-01-13 Panasonic Corp 電力変換装置
JP2012248753A (ja) 2011-05-30 2012-12-13 Panasonic Corp スイッチ装置
JP2013062298A (ja) 2011-09-12 2013-04-04 Toshiba Corp 窒化物半導体装置
US20150371987A1 (en) 2014-06-23 2015-12-24 International Rectifier Corporation Group III-V HEMT Having a Diode Controlled Substrate
JP2017055071A (ja) 2015-09-11 2017-03-16 株式会社東芝 半導体装置、駆動制御装置、および駆動制御方法
CN207183255U (zh) 2017-08-30 2018-04-03 广东省半导体产业技术研究院 一种背面场板结构hemt器件
JP2019220557A (ja) 2018-06-19 2019-12-26 株式会社東芝 半導体装置及びその製造方法

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Publication number Publication date
JP2021111676A (ja) 2021-08-02
US11362653B2 (en) 2022-06-14
US20210218394A1 (en) 2021-07-15

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