JP7278650B2 - バルブモジュール及びこれを含む基板処理装置 - Google Patents
バルブモジュール及びこれを含む基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 claims description 94
- 239000007789 gas Substances 0.000 claims description 82
- 238000004140 cleaning Methods 0.000 claims description 28
- 230000000903 blocking effect Effects 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 21
- 239000011261 inert gas Substances 0.000 claims description 17
- 230000001012 protector Effects 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OMRRUNXAWXNVFW-UHFFFAOYSA-N fluoridochlorine Chemical compound ClF OMRRUNXAWXNVFW-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K25/00—Details relating to contact between valve members and seats
- F16K25/04—Arrangements for preventing erosion, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
- F16K3/02—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor
- F16K3/0281—Guillotine or blade-type valves, e.g. no passage through the valve member
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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Description
Claims (14)
- 基板処理空間(S)を形成する工程チャンバー(100)と、
前記工程チャンバー(100)に結合され、プラズマによって活性化されたガスが流れる流路(302)を形成する流路部(300)と、
を含む基板処理装置に設置されるバルブモジュール(400)であって、
前記流路(302)を開閉するために前記流路部(300)の一側に備えられる開放スリット(301)を介して前記流路(302)を横切りながら前後方移動可能に設置される開閉プレート(410)と、
前記開閉プレート(410)の前後方移動を駆動する第1駆動部(420)と、
前記開閉プレート(410)が後方に移動しながら前記流路(302)を開放しているとき、前記開閉プレート(410)と前記流路(302)との間に移動し、活性化されたガスによって前記開閉プレート(410)が損傷することを防止する開閉プレート保護部(430)と、
前記開閉プレート(410)の板面に垂直な第1方向に前記開閉プレート保護部(430)の移動を駆動する第2駆動部(440)と、
を含み、
前記開閉プレート保護部(430)は、前記開閉プレート(410)の後方移動時、前記開閉プレート(410)と前記開放スリット(301)との間に進入する遮断ブレード(432)を含み、
前記開閉プレート保護部(430)は、前記第2駆動部(440)に結合されるために、2つの結合部(431)をさらに含み、
前記2つの結合部(431)は、前記遮断ブレード(432)の両端部で、前記開閉プレート(410)の後進移動方向にそれぞれ延び、
前記遮断ブレード(432)が前記開閉プレート(410)と前記開放スリット(301)との間に進入しながら前記開放スリット(301)を覆蓋するとき、前記開閉プレート(410)は前記2つの結合部(431)の間に位置することを特徴とするバルブモジュール(400)。 - 請求項1に記載のバルブモジュール(400)であって、
前記流路部(300)には、前記開閉プレート(410)の前方移動時、前記開閉プレート(410)と密着するバルブゲート(303)が備えられ、
前記開閉プレート(410)は、シーリングのために前記バルブゲート(303)と密着するシーリング部(413)を含むことを特徴とする、バルブモジュール(400)。 - 基板処理空間(S)を形成する工程チャンバー(100)と、
前記工程チャンバー(100)に結合され、プラズマによって活性化されたガスが流れる流路(302)を形成する流路部(300)と、
を含む基板処理装置に設置されるバルブモジュール(400)であって、
前記流路(302)を開閉するために前記流路部(300)の一側に備えられる開放スリット(301)を介して前記流路(302)を横切りながら前後方移動可能に設置される開閉プレート(410)と、
前記開閉プレート(410)の前後方移動を駆動する第1駆動部(420)と、
前記開閉プレート(410)が後方に移動しながら前記流路(302)を開放しているとき、前記開閉プレート(410)と前記流路(302)との間に移動し、活性化されたガスによって前記開閉プレート(410)が損傷することを防止する開閉プレート保護部(430)と、
前記開閉プレート保護部(430)の移動を駆動する第2駆動部(440)と、
を含み、
前記開閉プレート保護部(430)は、前記開閉プレート(410)の後方移動時、前記開閉プレート(410)と前記開放スリット(301)との間に進入しながら前記開放スリット(301)を覆蓋する遮断ブレード(432)を含み、
前記遮断ブレード(432)は、前記流路(302)の周囲を覆う中空型リング状からなることを特徴とする、バルブモジュール(400)。 - 請求項1に記載のバルブモジュール(400)であって、
前記遮断ブレード(432)と前記開放スリット(301)との間には間隙が形成されることを特徴とする、バルブモジュール(400)。 - 請求項1~4のいずれか1項に記載のバルブモジュール(400)であって、
前記バルブモジュール(400)は、前記開閉プレート(410)及び前記第1駆動部(420)が設置されるバルブハウジング(450)をさらに含むことを特徴とする、バルブモジュール(400)。 - 請求項5に記載のバルブモジュール(400)であって、
前記バルブモジュール(400)は、前記開閉プレート(410)が後方に移動しながら前記流路(302)を開放しているとき、前記開閉プレート(410)が位置した空間に活性化されたガスが浸透することを防止するために、前記バルブハウジング(450)を介して不活性ガスを供給する不活性ガス供給部を含むことを特徴とする、バルブモジュール(400)。 - 請求項3に記載のバルブモジュール(400)であって、
前記遮断ブレード(432)は、前記開閉プレート(410)と干渉しないように前記開閉プレート(410)の前後進移動と連動し、前記開閉プレート(410)の板面に垂直な第1方向に沿って移動することを特徴とする、バルブモジュール(400)。 - 請求項1または4に記載のバルブモジュール(400)であって、
前記遮断ブレード(432)は、前記開閉プレート(410)と干渉しないように前記開閉プレート(410)の前後進移動と連動し、前記第1方向に沿って移動することを特徴とする、バルブモジュール(400)。 - 請求項1~4のいずれか1項に記載のバルブモジュール(400)であって、
前記流路部(300)は、前記工程チャンバー(100)と遠隔プラズマを発生させる遠隔プラズマ発生部(200)との間に設置されることを特徴とする、バルブモジュール(400)。 - 請求項9に記載のバルブモジュール(400)であって、
前記工程チャンバー(100)の洗浄のために、前記遠隔プラズマ発生部(200)で活性化された洗浄ガスが前記流路部(300)を介して前記工程チャンバー(100)に供給されることを特徴とする、バルブモジュール(400)。 - 請求項1~4のいずれか1項に記載のバルブモジュール(400)であって、
前記流路部(300)は、前記工程チャンバー(100)と前記工程チャンバー(100)の排気のための排気ポンプ(800)との間に設置されることを特徴とする、バルブモジュール(400)。 - 基板処理空間(S)を形成する工程チャンバー(100)と、
前記工程チャンバー(100)に結合され、プラズマによって活性化されたガスが流れる流路(302)を形成する流路部(300)と、
前記流路部(300)に設置される請求項9に係るバルブモジュール(400)と、
を含む基板処理装置。 - 請求項12に記載の基板処理装置であって、
前記工程チャンバー(100)の洗浄のために、前記遠隔プラズマ発生部(200)で活性化される洗浄ガスを前記遠隔プラズマ発生部(200)に供給する洗浄ガス供給ライン(210)をさらに含むことを特徴とする、基板処理装置。 - 請求項12に記載の基板処理装置であって、
前記流路部(300)及び前記バルブモジュール(400)のうち少なくとも一つを冷却するための冷却部(900)をさらに含むことを特徴とする、基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020190016638A KR102229688B1 (ko) | 2019-02-13 | 2019-02-13 | 밸브모듈 및 이를 포함하는 기판처리장치 |
KR10-2019-0016638 | 2019-02-13 | ||
PCT/KR2020/000122 WO2020166823A1 (ko) | 2019-02-13 | 2020-01-03 | 밸브모듈 및 이를 포함하는 기판처리장치 |
Publications (2)
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JP2022520274A JP2022520274A (ja) | 2022-03-29 |
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WO2010024036A1 (ja) * | 2008-08-28 | 2010-03-04 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置のクリーニング方法 |
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