JP7269931B2 - 光電気能動素子 - Google Patents
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- JP7269931B2 JP7269931B2 JP2020528381A JP2020528381A JP7269931B2 JP 7269931 B2 JP7269931 B2 JP 7269931B2 JP 2020528381 A JP2020528381 A JP 2020528381A JP 2020528381 A JP2020528381 A JP 2020528381A JP 7269931 B2 JP7269931 B2 JP 7269931B2
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- 229910052710 silicon Inorganic materials 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 41
- 239000000945 filler Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000005253 cladding Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 230000005701 quantum confined stark effect Effects 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 4
- 230000005693 optoelectronics Effects 0.000 claims 2
- 238000004050 hot filament vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 148
- 239000000758 substrate Substances 0.000 description 18
- 125000006850 spacer group Chemical group 0.000 description 15
- 239000002243 precursor Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229930091051 Arenine Natural products 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/108—Materials and properties semiconductor quantum wells
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
シリコン上の絶縁体によるSOI導波路と、
前記SOI導波路のキャビティ内に光電気活性スタックを含む光電気活性導波路と、
前記光電気活性スタックと前記SOI導波路との間のチャネルとを備える光電気能動素子であって、前記チャネルは、キャビティの側壁を形成する材料の屈折率と同等の屈折率を有する充填材で充填され、それにより、前記SOI導波路と前記光電気活性スタックとの間の前記チャネルにブリッジ導波路を形成するシリコンベースの光電気能動素子を提供する。
242:Si0.8Ge0.2で形成される高さ400nmのトランジットバッファ層;
240:Si0.18Ge0.82で形成される高さ400nmのP型バッファ層;
238:Si0.18Ge0.82で形成される高さ15nmのスペーサ層;
236:各井戸が10nm厚のGe量子井戸層と、各井戸の間にSi0.33Ge0.67で形成される12nm厚の障壁層を含む高さ188nmの多重量子井戸層、九つの障壁層があるとよい;
234:Si0.18Ge0.82で形成される高さ15nmのスペーサ層;
232:1×1018cm-3の濃度にドープされたSi0.18Ge0.82から形成される高さ300nmのN層;及び
230:濃度が1×1019cm-3以上にドープされたSi0.8Ge0.2で形成される高さ80nmのN+層。
Claims (22)
- シリコンベースの光電気能動素子であって、
シリコン上の絶縁体によるSOI導波路と、
前記SOI導波路のキャビティ内に、複数のシリコン-ゲルマニウム層を含む光電気活性スタックを含む光電気活性導波路と、
前記光電気活性スタックと前記SOI導波路との間で、200nmから280nmの厚さのライナーでライニングされたチャネルとを備え、
前記ライニングされたチャネルは、前記キャビティの側壁を形成する材料の屈折率と同等の屈折率を有する充填材で充填され、それにより、前記SOI導波路と前記光電気活性スタックとの間のチャネルにブリッジ導波路を形成する光電気能動素子。 - 請求項1に記載のシリコンベースの光電気能動素子であって、
前記ライナーが窒化ケイ素から形成される光電気能動素子。 - 請求項1又は2に記載のシリコンベースの光電気能動素子であって、
前記チャネルの基部に位置するライナーの一部の上面が、SOI素子の埋め込み酸化物層の表面の上面と位置が揃えられる光電気能動素子。 - 請求項1から3のいずれか一つに記載のシリコンベースの光電気能動素子であって、
前記光電気活性スタックが多重量子井戸領域を含む光電気能動素子。 - 請求項1から4のいずれか一つに記載のシリコンベースの光電気能動素子であって、
前記充填材がアモルファスシリコンである光電気能動素子。 - 請求項1から4のいずれか一つに記載のシリコンベースの光電気能動素子であって、
前記充填材がシリコン-ゲルマニウム(SiGe)である光電気能動素子。 - 請求項1から6のいずれか一つに記載のシリコンベースの光電気能動素子であって、
前記光電気活性スタックは、上から見て平行四辺形又は台形の形状を有する光電気能動素子。 - シリコンベースの光電気能動素子を製造する方法であって、
シリコン上の絶縁体によるSOI導波路を設け、
前記SOI導波路のBOX層を貫いて前記SOI導波路の一部にキャビティをエッチングし、
前記キャビティの側壁の隣接領域にファセットを有し、複数のシリコン-ゲルマニウム層を含む光電気活性スタックをキャビティ内でエピタキシャル成長させ、光電気活性スタックをエッチングして光電気活性導波路を形成し、
前記キャビティの側壁に隣接する領域をエッチングしてファセットを除去し、前記キャビティの側壁と前記光電気活性スタックとの間にチャネルを生成し、
ライナーでチャネルをライニングして、ライニングされたチャネルを設け、
側壁を形成する材料の屈折率と同等の屈折率を有する充填材で前記ライニングされたチャネルを充填し、それにより、前記充填材が前記SOI導波路と前記光電気活性スタックとの間のチャネルにブリッジ導波路を形成する方法。 - 請求項8に記載の方法であって、
前記ライナーは、窒化ケイ素で形成される方法。 - 請求項8又は9に記載の方法であって、
前記ライナーが200nmから280nmの厚さを有する方法。 - 請求項8から10のいずれか一つに記載の方法であって、
前記光電気活性スタックが多重量子井戸領域を含む方法。 - 請求項8から11のいずれか一つに記載の方法であって、
前記ライニングされたチャネルが充填される前記充填材がアモルファスシリコンである方法。 - 請求項8から11のいずれか一つに記載の方法であって、
前記ライニングされたチャネルが充填される前記充填材がシリコン-ゲルマニウム(SiGe)である方法。 - 請求項8から13のいずれか一つに記載の方法であって、
前記ライニングされたチャネルを充填する工程がプラズマ強化化学蒸着によって行われる方法。 - 請求項8から13のいずれか一つに記載の方法であって、
前記ライニングされたチャネルを充填する工程が熱線化学気相堆積によって行われる方法。 - 請求項8から15のいずれか一つに記載の方法であって、
化学機械研磨により前記充填材を平坦化する工程をさらに含む方法。 - 請求項8から16のいずれか一つに記載の方法であって、
前記エピタキシャル成長した光電気活性スタックは、キャビティの反対側の側壁に隣接する第2の領域に第2のファセットを有し、
前記エッチングする工程では、前記第2の領域の除去によって前記第2のファセットを除去し、反対側の側壁と前記光電気活性スタックとの間に第2のチャネルを生成し、
前記充填する工程では、第2のチャネルをアモルファスシリコンで充填する方法。 - 請求項17に記載の方法であって、
前記シリコンベースの光電気能動素子が、量子閉じ込めシュタルク効果に基づく電気吸収変調器である方法。 - 請求項8から18のいずれか一つに記載の方法であって、
前記エピタキシャル成長したスタックがバッファ層を含み、
前記方法が、変調器の光モードが前記SOI導波路の光モードと一致するように前記バッファ層の高さを調整する工程を含む方法。 - 請求項8から19のいずれか一つに記載の方法であって、
前記光電気活性スタックが前記キャビティ内に平行四辺形又は台形の形状を有するように成長される方法。 - 請求項8から20のいずれか一つに記載の方法であって、
前記SOI導波路の一部に前記キャビティをエッチングする工程が、SOI導波路を埋め込み酸化物(BOX)層の底部まで又はそれを超えてエッチングして、埋め込み酸化物がないボックスレス領域を作成する工程を含む方法。 - 請求項21に記載の方法であって、
光活性領域のバッファ層の屈折率より小さい屈折率を有するクラッド層を、エッチングされたキャビティ内に成長させる工程をさらに含む方法。
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EPPCT/EP2017/080221 | 2017-11-23 | ||
PCT/EP2017/080221 WO2018096038A1 (en) | 2016-11-23 | 2017-11-23 | Electro-optically active device |
US201862635955P | 2018-02-27 | 2018-02-27 | |
US62/635,955 | 2018-02-27 | ||
PCT/EP2018/062269 WO2019101369A1 (en) | 2017-11-23 | 2018-05-11 | Electro-optically active device |
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EP (1) | EP3714321B1 (ja) |
JP (1) | JP7269931B2 (ja) |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2573576B (en) * | 2018-05-11 | 2020-06-10 | Rockley Photonics Ltd | Optoelectronic device and method of manufacturing thereof |
US11327343B2 (en) * | 2018-05-15 | 2022-05-10 | Rockley Photonics Limited | Integration of photonic components on SOI platform |
GB2585391B (en) * | 2019-08-23 | 2021-10-27 | Rockley Photonics Ltd | Method of fabricating an optoelectronic component |
GB2586889B (en) * | 2019-08-26 | 2022-11-02 | Rockley Photonics Ltd | Method of manufacturing a III-V based optoelectronic device |
US11067749B2 (en) * | 2019-11-21 | 2021-07-20 | Globalfoundries U.S. Inc. | Waveguides with cladding layers of gradated refractive index |
CN111487791B (zh) * | 2020-04-23 | 2023-12-22 | 济南晶正电子科技有限公司 | 一种集成光学复合基板 |
JP2022189578A (ja) * | 2021-06-11 | 2022-12-22 | 富士通オプティカルコンポーネンツ株式会社 | 光デバイス及び光通信装置 |
US20230090189A1 (en) * | 2021-09-22 | 2023-03-23 | Rockley Photonics Limited | Optoelectronic device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020079427A1 (en) | 2000-12-26 | 2002-06-27 | Dan-Xia Xu | High speed and high efficiency Si-based photodetectors using waveguides formed with silicides for near IR applications |
JP2003007993A (ja) | 2001-06-26 | 2003-01-10 | Hamamatsu Photonics Kk | 光検出素子 |
WO2009110632A1 (ja) | 2008-03-07 | 2009-09-11 | 日本電気株式会社 | SiGeフォトダイオード |
US20100330727A1 (en) | 2007-10-30 | 2010-12-30 | Hill Craig M | Method for Fabricating Butt-Coupled Electro-Absorptive Modulators |
JP2014525608A (ja) | 2011-08-30 | 2014-09-29 | スコーピオズ テクノロジーズ インコーポレイテッド | 集積導波路カプラ |
JP2016152265A (ja) | 2015-02-16 | 2016-08-22 | 株式会社東芝 | 固体撮像素子 |
JP2016533027A (ja) | 2013-10-09 | 2016-10-20 | スコーピオズ テクノロジーズ インコーポレイテッド | シリコンフォトニックデバイスへの未処理直接バンドギャップチップの組込み |
US20160358954A1 (en) | 2015-06-08 | 2016-12-08 | International Business Machines Corporation | Deep trench sidewall etch stop |
Family Cites Families (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5163118A (en) * | 1986-11-10 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Air Force | Lattice mismatched hetrostructure optical waveguide |
US6154475A (en) | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
JPH11238902A (ja) * | 1998-02-19 | 1999-08-31 | Nec Corp | 半導体光検出装置及び半導体光検出装置の製造方法 |
US6222951B1 (en) * | 2000-04-03 | 2001-04-24 | Fengyi Huang | Silicon-based silicon-germanium integrated-circuit optical network unit |
US6891985B2 (en) * | 2001-05-17 | 2005-05-10 | Sioptical, Inc. | Polyloaded optical waveguide devices and methods for making same |
US6738546B2 (en) * | 2001-05-17 | 2004-05-18 | Sioptical, Inc. | Optical waveguide circuit including multiple passive optical waveguide devices, and method of making same |
US6842546B2 (en) * | 2001-05-17 | 2005-01-11 | Sioptical, Inc. | Polyloaded optical waveguide device in combination with optical coupler, and method for making same |
US6690863B2 (en) * | 2001-05-17 | 2004-02-10 | Si Optical, Inc. | Waveguide coupler and method for making same |
US6898352B2 (en) * | 2001-05-17 | 2005-05-24 | Sioptical, Inc. | Optical waveguide circuit including passive optical waveguide device combined with active optical waveguide device, and method for making same |
US6760498B2 (en) * | 2001-05-17 | 2004-07-06 | Sioptical, Inc. | Arrayed waveguide grating, and method of making same |
US6967347B2 (en) * | 2001-05-21 | 2005-11-22 | The Regents Of The University Of Colorado | Terahertz interconnect system and applications |
KR100745275B1 (ko) * | 2003-04-21 | 2007-08-01 | 시옵티컬 인코포레이티드 | 전자 디바이스들을 갖는 실리콘-기반 광학 디바이스들의cmos-호환형 집적 |
KR100745285B1 (ko) * | 2003-04-23 | 2007-08-01 | 시옵티컬 인코포레이티드 | Soi 광학 플랫폼상에 형성된 서브-마이크론 평면 광파디바이스 |
EP1743376B1 (en) * | 2004-02-26 | 2015-09-02 | Cisco Technology, Inc. | Active manipulation of light in a silicon-on-insulator (soi) structure |
US20050236619A1 (en) * | 2004-04-21 | 2005-10-27 | Vipulkumar Patel | CMOS-compatible integration of silicon-based optical devices with electronic devices |
US7515777B2 (en) * | 2004-12-09 | 2009-04-07 | The Board Of Trustees Of The Leland Stanford Junior University | Silicon-based Ge/SiGe optical interconnects |
JP2008526003A (ja) * | 2004-12-24 | 2008-07-17 | ピレリ・アンド・チ・ソチエタ・ペル・アツィオーニ | ゲルマニウムオンシリコンの光検出器 |
US20060177173A1 (en) * | 2005-02-04 | 2006-08-10 | Sioptical, Inc. | Vertical stacking of multiple integrated circuits including SOI-based optical components |
WO2007048110A2 (en) * | 2005-10-19 | 2007-04-26 | University Of Notre Dame Du Lac | High-index-contrast waveguide |
WO2007061986A1 (en) | 2005-11-22 | 2007-05-31 | Massachusetts Institute Of Technology | High speed and low loss gesi/si electro-absorption light modulator and method of fabrication using selective growth |
US7391801B1 (en) * | 2005-11-25 | 2008-06-24 | The United States Of America As Represented By The Secretary Of The Air Force | Electrically pumped Group IV semiconductor micro-ring laser |
US8106379B2 (en) * | 2006-04-26 | 2012-01-31 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
US20080002929A1 (en) * | 2006-06-30 | 2008-01-03 | Bowers John E | Electrically pumped semiconductor evanescent laser |
US7257283B1 (en) * | 2006-06-30 | 2007-08-14 | Intel Corporation | Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array |
US8768132B2 (en) | 2008-01-14 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Ridge waveguide |
US8330242B2 (en) | 2008-03-28 | 2012-12-11 | Nec Corporation | Semiconductor light-receiving element |
US8290325B2 (en) * | 2008-06-30 | 2012-10-16 | Intel Corporation | Waveguide photodetector device and manufacturing method thereof |
WO2010100738A1 (ja) * | 2009-03-05 | 2010-09-10 | 富士通株式会社 | 半導体レーザ、シリコン導波路基板、集積素子 |
US8150223B2 (en) * | 2009-03-31 | 2012-04-03 | Oracle America, Inc. | Thermal tuning of an optical device |
US7848599B2 (en) * | 2009-03-31 | 2010-12-07 | Oracle America, Inc. | Optical device with large thermal impedance |
US8078013B2 (en) * | 2009-03-31 | 2011-12-13 | Oracle America, Inc. | Dual-layer thermally tuned optical device |
US8768170B2 (en) * | 2009-06-29 | 2014-07-01 | Oracle International Corporation | Optical device with reduced thermal tuning energy |
US9316785B2 (en) * | 2013-10-09 | 2016-04-19 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
US8340479B2 (en) | 2010-01-14 | 2012-12-25 | Oracle America, Inc. | Electro-optic modulator with inverse tapered waveguides |
US20110215344A1 (en) * | 2010-03-05 | 2011-09-08 | Dardy Henry D | LOW POWER GRADED BASE SiGe HBT LIGHT MODULATOR |
SG183409A1 (en) | 2010-03-15 | 2012-09-27 | Agency Science Tech & Res | Optical modulator and method for manufacturing the same |
US8401345B2 (en) | 2010-06-16 | 2013-03-19 | Oracle America, Inc. | Optical modulator with three-dimensional waveguide tapers |
US8824837B2 (en) * | 2010-08-26 | 2014-09-02 | The Board Of Trustees Of The Leland Stanford Junior University | Integration of optoelectronics with waveguides using interposer layer |
US9922967B2 (en) | 2010-12-08 | 2018-03-20 | Skorpios Technologies, Inc. | Multilevel template assisted wafer bonding |
US9178085B2 (en) * | 2010-12-22 | 2015-11-03 | Bing Li | Waveguide photodetector and forming method thereof |
JP6016216B2 (ja) * | 2011-02-15 | 2016-10-26 | ルクスマクス テクノロジー コーポレーション | 完全に集積された相補性金属酸化膜半導体(cmos)フーリエ変換赤外線(ftir)分光計及びラマン分光計 |
CN102169243A (zh) * | 2011-04-28 | 2011-08-31 | 中国科学院半导体研究所 | 亚微米波导型Ge量子阱电光调制器 |
US20120300796A1 (en) * | 2011-05-27 | 2012-11-29 | Sysak Matthew N | Hybrid lasers |
US8731017B2 (en) * | 2011-08-12 | 2014-05-20 | Acorn Technologies, Inc. | Tensile strained semiconductor photon emission and detection devices and integrated photonics system |
EP2795675A4 (en) * | 2011-12-20 | 2015-11-25 | Intel Corp | HYBRID INTEGRATION OF GROUP III-V SEMICONDUCTOR COMPONENTS ON SILICON |
WO2013095426A1 (en) * | 2011-12-21 | 2013-06-27 | Intel Corporation | Fabrication of planar light-wave circuits (plcs) for optical i/o |
US8901576B2 (en) * | 2012-01-18 | 2014-12-02 | International Business Machines Corporation | Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer |
US9368579B2 (en) | 2012-02-07 | 2016-06-14 | The Board Of Trustees Of The Leland Stanford Junior University | Selective area growth of germanium and silicon-germanium in silicon waveguides for on-chip optical interconnect applications |
WO2014011846A2 (en) | 2012-07-12 | 2014-01-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Wavelength and power scalable waveguiding-based infrared laser system |
US9417186B2 (en) * | 2012-08-30 | 2016-08-16 | Infineon Technologies Ag | Opto-electronic sensor |
US9219059B2 (en) | 2012-09-26 | 2015-12-22 | International Business Machines Corporation | Semiconductor structure with integrated passive structures |
US20140270618A1 (en) * | 2013-03-15 | 2014-09-18 | Gigoptix, Inc. | Wavelength tunable integrated optical subassembly based on polymer technology |
CN105122469B (zh) * | 2013-04-19 | 2017-03-08 | 富士通株式会社 | 半导体受光元件及其制造方法 |
US9939578B2 (en) * | 2013-05-10 | 2018-04-10 | Intel Corporation | Low cost integration of optical components in planar lightwave circuits |
CN105593747B (zh) * | 2013-06-09 | 2019-07-05 | 光电网股份有限公司 | 超低电压宽调制带宽低光学损耗光学强度或相位调制器 |
US10353224B2 (en) * | 2013-06-09 | 2019-07-16 | Electronic Photonic Ic Inc. (Epic Inc.) | Optical signal processing devices with high device performances |
EP2866317B1 (en) * | 2013-07-01 | 2017-08-02 | Imec | Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers |
TWI634716B (zh) * | 2013-10-22 | 2018-09-01 | 美國麻省理工學院 | 使用cmos製造技術之波導形成 |
GB2523383B (en) | 2014-02-24 | 2016-09-14 | Rockley Photonics Ltd | Detector remodulator |
US10928659B2 (en) * | 2014-02-24 | 2021-02-23 | Rockley Photonics Limited | Optoelectronic device |
US10663663B2 (en) * | 2014-02-28 | 2020-05-26 | Ciena Corporation | Spot-size converter for optical mode conversion and coupling between two waveguides |
JP6224495B2 (ja) * | 2014-03-19 | 2017-11-01 | 株式会社東芝 | 半導体レーザ装置 |
CN107111060A (zh) * | 2014-07-14 | 2017-08-29 | 拜奥德光电公司 | 与光耦合元件的3d光子集成 |
US20180081118A1 (en) * | 2014-07-14 | 2018-03-22 | Biond Photonics Inc. | Photonic integration by flip-chip bonding and spot-size conversion |
JP5998183B2 (ja) * | 2014-08-27 | 2016-09-28 | 株式会社フジクラ | 基板型光導波路素子 |
US9209142B1 (en) | 2014-09-05 | 2015-12-08 | Skorpios Technologies, Inc. | Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal |
US9595805B2 (en) | 2014-09-22 | 2017-03-14 | International Business Machines Corporation | III-V photonic integrated circuits on silicon substrate |
US20170317471A1 (en) * | 2014-11-10 | 2017-11-02 | Agency For Science, Technology And Research | An optical device and a method for fabricating thereof |
US9484711B2 (en) * | 2015-01-20 | 2016-11-01 | Sae Magnetics (H.K.) Ltd. | Semiconductor laser apparatus and manufacturing method thereof |
US11150494B2 (en) * | 2015-03-05 | 2021-10-19 | Rockley Photonics Limited | Waveguide modulator structures |
US10732349B2 (en) * | 2016-02-08 | 2020-08-04 | Skorpios Technologies, Inc. | Broadband back mirror for a III-V chip in silicon photonics |
WO2017151843A1 (en) * | 2016-03-02 | 2017-09-08 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy Naval | Chip-scale two-dimensionai optical phased array with simplified controls |
US20180019139A1 (en) | 2016-07-12 | 2018-01-18 | Ayar Labs, Inc. | Wafer-Level Etching Methods for Planar Photonics Circuits and Devices |
US10831043B2 (en) | 2016-11-23 | 2020-11-10 | Rockley Photonics Limited | Electro-optically active device |
CN109564361B (zh) | 2016-11-23 | 2023-09-01 | 洛克利光子有限公司 | 电光有源装置 |
US10340661B2 (en) * | 2017-11-01 | 2019-07-02 | International Business Machines Corporation | Electro-optical device with lateral current injection regions |
US10355453B2 (en) * | 2017-11-08 | 2019-07-16 | International Business Machines Corporation | Electro-optical device with lateral electron blocking layer |
GB2573586B (en) | 2017-11-23 | 2020-05-13 | Rockley Photonics Ltd | Electro-optically active device |
-
2018
- 2018-05-11 WO PCT/EP2018/062269 patent/WO2019101369A1/en unknown
- 2018-05-11 JP JP2020528381A patent/JP7269931B2/ja active Active
- 2018-05-11 EP EP18723010.7A patent/EP3714321B1/en active Active
- 2018-05-11 CN CN201880002546.7A patent/CN110168433A/zh active Pending
- 2018-05-11 US US16/766,268 patent/US11126020B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020079427A1 (en) | 2000-12-26 | 2002-06-27 | Dan-Xia Xu | High speed and high efficiency Si-based photodetectors using waveguides formed with silicides for near IR applications |
JP2003007993A (ja) | 2001-06-26 | 2003-01-10 | Hamamatsu Photonics Kk | 光検出素子 |
US20100330727A1 (en) | 2007-10-30 | 2010-12-30 | Hill Craig M | Method for Fabricating Butt-Coupled Electro-Absorptive Modulators |
WO2009110632A1 (ja) | 2008-03-07 | 2009-09-11 | 日本電気株式会社 | SiGeフォトダイオード |
JP2014525608A (ja) | 2011-08-30 | 2014-09-29 | スコーピオズ テクノロジーズ インコーポレイテッド | 集積導波路カプラ |
JP2016533027A (ja) | 2013-10-09 | 2016-10-20 | スコーピオズ テクノロジーズ インコーポレイテッド | シリコンフォトニックデバイスへの未処理直接バンドギャップチップの組込み |
JP2016152265A (ja) | 2015-02-16 | 2016-08-22 | 株式会社東芝 | 固体撮像素子 |
US20160358954A1 (en) | 2015-06-08 | 2016-12-08 | International Business Machines Corporation | Deep trench sidewall etch stop |
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US20200363662A1 (en) | 2020-11-19 |
EP3714321B1 (en) | 2023-12-13 |
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