JP7241518B2 - Package device manufacturing method - Google Patents

Description

The present invention relates to a method of manufacturing a packaged device.

With the increase in the processing speed of semiconductor devices, device chip packaging technology is also evolving (see, for example, Patent Document 1). Among device chip packaging technologies, the development of packaging technology using a silicon interposer substrate on which through electrodes are formed in order to achieve a fan-out type packaging technology that expands the narrow electrodes of the device chip. progressing.

JP 2015-46569 A

In the package technology using the silicon interposer substrate described above, a device chip is mounted on the silicon interposer substrate and the device chip is covered with a mold resin. However, the above-described package technology using a silicon interposer substrate warps the entire substrate due to contraction of the mold resin, and thus there remains the problem that subsequent film formation, electrode formation, and thinning become difficult.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a packaged device that can suppress warping after the device chip is covered with a mold resin.

In order to solve the above-described problems and achieve the object, a method of manufacturing a packaged device according to the present invention provides a method for manufacturing a packaged device, in which a device chip is arranged in a region defined by division lines on one surface of an interposer substrate, and the device chip is covered with a mold resin, the device chip is mounted on the device chip mounting area on one surface of the interposer substrate, and the device chip is mounted on an area other than the device chip mounting area. A mounting step of installing a thick gap-filling member in order to reduce the amount of mold resin to be supplied, and supplying mold resin between the gap-filling members on one surface side of the interposer substrate after the mounting step. Then, after performing the resin molding step of covering the device chip with the mold resin, and the resin molding step, the other surface side of the interposer substrate is held by a chuck table of a grinding device, and the gap filling member and the mold resin are bonded together. are ground to form a flat surface made of the gap-filling member and the mold resin , and the interposer substrate and the gap-filling member are made of the same material .

In the method for manufacturing a packaged device, the gap filling member may have a through hole or recess corresponding to the device chip mounting area in a member having the same diameter as the interposer substrate.

In the method for manufacturing a packaged device, a through electrode forming step of holding the flat surface side and forming through electrodes connected to the electrodes of the device chip from the other surface side of the interposer substrate after performing the grinding step. and a wiring layer forming step of holding the flat surface side and forming a wiring layer on the other surface side of the interposer substrate after performing the through electrode forming step.
In the package device manufacturing method, the gap filling member may be made of a material having a smaller shrinkage rate than the mold resin.

The method for manufacturing a packaged device according to the present invention has the effect of suppressing warping after the device chip is coated with the molding resin.

FIG. 1 is a cross-sectional view of a packaged device manufactured by a method for manufacturing a packaged device according to Embodiment 1. FIG. FIG. 2 is a flow chart showing the flow of the manufacturing method of the packaged device according to the first embodiment. FIG. 3 is a cross-sectional view of the main part of the interposer substrate prepared in the mounting step of the method of manufacturing the packaged device shown in FIG. 4 is a cross-sectional view of the main part of the interposer substrate on which the adhesive layer is formed in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 5 is a cross-sectional view of the main part of the interposer substrate in which the gap-filling member is arranged on the adhesive layer in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 6 is a perspective view showing a gap-filling member arranged on the adhesive layer in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 7 is a cross-sectional view of the main part of the interposer substrate in which the device chip is arranged on the device mounting area in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 8 is a cross-sectional view of the main part of the interposer substrate after the resin molding step in the method of manufacturing the packaged device shown in FIG. 2. FIG. FIG. 9 is a side view schematically showing a grinding step of the manufacturing method of the packaged device shown in FIG. 2; 10 is a cross-sectional view of the main part of the interposer substrate after grinding the gap-filling member and the mold resin in the grinding step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 11 is a cross-sectional view of the main part of the interposer substrate after the substrate has been ground in the grinding step of the manufacturing method of the packaged device shown in FIG. 2. FIG. FIG. 12 is a cross-sectional view of a packaged device manufactured by the method for manufacturing a packaged device according to the second embodiment. FIG. 13 is a flow chart showing the flow of the manufacturing method of the packaged device according to the second embodiment. 14 is a cross-sectional view of a main part of an interposer substrate having an insulating layer formed on the other surface side in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG. 15 is a cross-sectional view of a main part of the interposer substrate in which a mask is formed on the insulator layer in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG. 16 is a cross-sectional view of the main part of the interposer substrate after etching from the other surface side in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG. 17 is a cross-sectional view of the main part of the interposer substrate on which the through electrodes are formed in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG. 18 is a cross-sectional view of the main part of the interposer substrate after the wiring layer forming step in the method of manufacturing the packaged device shown in FIG. 13. FIG. 19 is a cross-sectional view of the main part of the interposer substrate after the dividing step of the manufacturing method of the packaged device shown in FIG. 13. FIG.

A form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. In addition, various omissions, substitutions, or changes in configuration can be made without departing from the gist of the present invention.

[Embodiment 1]
A method for manufacturing a package device according to Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a packaged device manufactured by a method for manufacturing a packaged device according to Embodiment 1. FIG. FIG. 2 is a flow chart showing the flow of the manufacturing method of the packaged device according to the first embodiment.

A method for manufacturing a packaged device according to the first embodiment is a method for manufacturing the packaged device shown in FIG. In Embodiment 1, the packaged device 1 includes an interposer substrate 10, a device chip 20, a gap filling member 30, and a mold resin 40, as shown in FIG.

In Embodiment 1, the interposer substrate 10 includes a plate-like substrate 11 made of silicon or the like, and a wiring layer 13 laminated on one surface 12 of the substrate 11 . The wiring layer 13 includes a conductor portion 14 made of a conductive metal or the like and an insulating portion 15 having an insulating property. In Embodiment 1, the insulating portion 15 is made of SiO ₂ or the like. Further, in the first embodiment, the interposer substrate 10 has the adhesive layer 16 laminated on the wiring layer 13 , that is, on the one surface 12 side of the substrate 11 .

The device chip 20 is arranged on the part of the adhesive layer 16 above the device mounting area 102 of the area defined by the dividing line 101 on the one surface 12 of the interposer substrate 10 . The device mounting area 102 is an area overlapping the device chip 20 on one surface 12 of the interposer substrate 10 . The device chip 20 has an electrode 21 electrically connected to the conductor portion 14 . In Embodiment 1, the device chip 20 is, for example, an LSI (Large Scale Integration), a passive component, or the like.

The gap-filling member 30 is arranged on the one surface 12 of the interposer substrate 10 of the adhesive layer 16 excluding the device mounting region 102, that is, the portion above the device non-mounting region 103 where the device chip 20 is not mounted. The device non-mounting area 103 is an area that does not overlap the device chip 20 on one surface 12 of the interposer substrate 10 and includes the dividing line 101 . The gap filling member 30 is formed in a plate shape thicker than the device chip 20 . In the first embodiment, the gap-filling member 30 is made of a material such as silicon, which has a lower coefficient of expansion and contraction than the molding resin 40 during heating and cooling.

The mold resin 40 is made of synthetic resin or the like and covers the device chip 20 . In the first embodiment, it is supplied between the gap filling members 30 to cover the device chip 20 arranged on the device mounting area 102 . In the first embodiment, the mold resin 40 is supplied between the gap filling members 30 in a softened state such as by being heated, and then cured to cover the device chip 20 . The mold resin 40 shrinks when hardened.

As shown in FIG. 2, the manufacturing method of the packaged device according to the first embodiment for manufacturing the packaged device 1 having the configuration described above includes a mounting step ST1, a resin molding step ST2, a grinding step ST3, and a dividing step ST4. Prepare.

(mounting step)
FIG. 3 is a cross-sectional view of the main part of the interposer substrate prepared in the mounting step of the method of manufacturing the packaged device shown in FIG. 4 is a cross-sectional view of the main part of the interposer substrate on which the adhesive layer is formed in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 5 is a cross-sectional view of the main part of the interposer substrate in which the gap-filling member is arranged on the adhesive layer in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 6 is a perspective view showing a gap-filling member arranged on the adhesive layer in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 7 is a cross-sectional view of the main part of the interposer substrate in which the device chip is arranged on the device mounting area in the mounting step of the manufacturing method of the packaged device shown in FIG. 2. FIG.

In the mounting step ST1, the device chip 20 is mounted on the device mounting area 102 on the one surface 12 of the interposer substrate 10, and a gap filling member thicker than the device chip 20 is placed on the device non-mounting area 103 other than the device mounting area 102. 30 to reduce the amount of mold resin 40 to be supplied. In the first embodiment, in the mounting step ST1, first, a disk-shaped interposer substrate 10 made of silicon or the like and having a wiring layer 13 laminated on one surface 12 of a substrate 11 shown in FIG. 3 is prepared. In the mounting step ST1, as shown in FIG. 4, an adhesive is supplied to fix the device chip 20 and the gap filling member 30 on the wiring layer 13 to form the adhesive layer 16. FIG.

In the first embodiment, in the mounting step ST1, as shown in FIG. 5, the gap-filling member 30 is placed and fixed on the portion of the adhesive layer 16 above the device non-mounting region 103 of the interposer substrate 10. FIG. In the first embodiment, as shown in FIG. 6, the gap-filling member 30 is a disc-shaped member 31 that is thicker than the device chip 20 and has the same diameter as the interposer substrate 10. Through holes 32 corresponding to the device mounting regions 102 are provided. Use the one with The through hole 32 penetrates the disk-shaped member 31 . In the first embodiment, in the mounting step ST1, the gap filling member 30 is arranged on the adhesive layer 16 on the interposer substrate 10 at a position coaxial with the interposer substrate 10 . That is, in this specification, the through hole 32 corresponding to the device mounting area 102 indicates that the through hole 32 overlaps the device mounting area 102 of the interposer substrate 10 .

In Embodiment 1, in the mounting step ST1, as shown in FIG. be placed within In the manufacturing method of the package device, once the device chip 20 is arranged in the device mounting area 102, the process proceeds to the resin molding step ST2. In Embodiment 1, in the mounting step ST1, the device chip 20 is mounted after the gap filling member 30 is fixed to the interposer substrate 10. However, in the present invention, after the device chip 20 is mounted on the interposer substrate 10 , the gap filling member 30 may be fixed.

(Resin mold step)
8 is a cross-sectional view of the main part of the interposer substrate after the resin molding step in the method of manufacturing the packaged device shown in FIG. 2. FIG. In the resin molding step ST2, the molding resin 40 is supplied to the through holes 32 between the gap filling members 30 on the one surface 12 side of the interposer substrate 10 after the mounting step ST1 is performed. This is the covering step.

In the first embodiment, in the resin molding step ST2, the softened mold resin 40 is supplied to the inside of the through hole 32 and onto the gap filling member 30 to harden the mold resin 40. As shown in FIG. At 40, the entire device chip 20 and gap filling member 30 are coated. After covering the device chip 20 and the gap-filling member 30 entirely with the mold resin 40, the manufacturing method of the package device proceeds to the grinding step ST3.

(grinding step)
FIG. 9 is a side view schematically showing a grinding step of the manufacturing method of the packaged device shown in FIG. 2; 10 is a cross-sectional view of the main part of the interposer substrate after grinding the gap-filling member and the mold resin in the grinding step of the manufacturing method of the packaged device shown in FIG. 2. FIG. 11 is a cross-sectional view of the main part of the interposer substrate after the substrate has been ground in the grinding step of the manufacturing method of the packaged device shown in FIG. 2. FIG.

In the grinding step ST3, after the resin molding step ST2 is performed, the other surface 17 side of the substrate 11 of the interposer substrate 10 is held by the chuck table 201 of the grinding device 200, and the gap filling member 30 and the mold resin 40 are aligned with the dotted line in FIG. , to the position indicated by the solid line to form a flat surface 50 composed of the gap-filling member 30 and the mold resin 40 . In the first embodiment, in the grinding step ST3, the grinding device 200 suction-holds the other surface 17 of the substrate 11 of the interposer substrate 10 on the holding surface 202 of the chuck table 201, as shown in FIG.

In the grinding step ST3, the grinding device 200 supplies grinding water while rotating the grinding wheel 204 about its axis by the spindle 203 and rotating the chuck table 201 about its axis. In the grinding step ST3, the grinding device 200 grinds the mold resin 40 on the interposer substrate 10 by bringing the grinding wheel 205 closer to the chuck table 201 at a predetermined feed rate. In the first embodiment, in the grinding step ST3, the grinding device 200 grinds the mold resin 40 and the gap filling member 30 until the gap filling member 30 on the device non-mounting region 103 is exposed, as shown in FIG. to form a flat surface 50 composed of the gap-filling member 30 and the mold resin 40 .

In the first embodiment, in the grinding step ST3, after the flat surface 50 is formed by the grinding device 200, the flat surface 50 is held by suction on the holding surface 202 of the chuck table 201, and the grinding wheel 204 is rotated around the axis by the spindle 203. Grinding water is supplied while rotating the chuck table 201 around its axis. In the grinding step ST3, the grinding device 200 grinds the other surface 17 side of the interposer substrate 10 by bringing the grinding wheel 205 closer to the chuck table 201 at a predetermined feed rate. In the first embodiment, in the grinding step ST3, the grinding device 200 thins the interposer substrate 10 from the position indicated by the dotted line in FIG. 11 to the predetermined finished thickness 104, as shown in FIG. When the flat surface 50 is formed and the interposer substrate 10 is thinned to the predetermined finished thickness 104, the manufacturing method of the package device proceeds to the dividing step ST4.

In the first embodiment, the grinding device 200 grinds the gap filling member 30 and the mold resin 40 to form the flat surface 50 in the grinding step ST3. However, in the present invention, after the grinding device 200 grinds, the polishing device (not shown) holds the other surface 17 side on the chuck table, rotates the polishing wheel around the axis by the spindle, and rotates the chuck table around the axis. The flat surface 50 may be subjected to chemical mechanical polishing (CMP) by bringing the polishing pad closer to the chuck table at a predetermined feed rate while rotating and supplying an alkaline polishing liquid.

Further, in the first embodiment, the grinding device 200 thins the interposer substrate 10 to the predetermined finished thickness 104 in the grinding step ST3. However, in the present invention, after the interposer substrate 10 is thinned by the grinding device 200, a polishing device (not shown) may CMP the other surface 17 of the substrate 11 of the interposer substrate 10. FIG.

(division step)
The dividing step ST4 is a step of dividing the interposer substrate 10 and the like along the dividing line 101 to divide the interposer substrate 10, the gap filling member 30 and the mold resin 40 into individual package devices 1. FIG. In the division step ST4, a cutting device, a laser processing device, or the like holds the flat surface 50 or the other surface 17 side on the holding surface of the chuck table, and cuts the planned division line 101 with a cutting blade or irradiates the planned division line with a laser beam. Illuminate and divide into individual packaged devices 1 . The method of manufacturing a packaged device ends when the interposer substrate 10 , the gap filling member 30 and the mold resin 40 are divided into individual packaged devices 1 .

In the method of manufacturing a packaged device according to the first embodiment, the gap filling member 30 is installed in the device non-mounting area 103 other than the device mounting area 102 in the mounting step ST1. For this reason, the method of manufacturing a package device can reduce the amount of the mold resin 40, and can also reduce the amount of shrinkage of the mold resin 40 when it hardens. As a result, the method for manufacturing a packaged device can alleviate warpage of the interposer substrate 10 and the like due to shrinkage of the cured mold resin 40, and can suppress warpage after the device chip 20 is covered with the mold resin 40. This has the effect of facilitating holding and transportation of the interposer substrate 10 and the like in the process, and lamination and mounting of materials in the next process.

Further, in the manufacturing method of the packaged device according to the first embodiment, the gap filling member 30 is a disc-shaped member 31 having the same diameter as the interposer substrate 10, and the through hole 32 corresponding to the device mounting area 102 is formed in this member 31. We assume that we have. For this reason, the manufacturing method of the packaged device makes it easy to install the gap filling member 30 on the interposer substrate 10 at a position overlapping the device non-mounting region 103 .

Further, in the method for manufacturing a package substrate according to the first embodiment, the interposer substrate 10 and the gap filling member 30 are made of the same material (eg, silicon in the first embodiment). Warping can be suppressed.

[Embodiment 2]
A method for manufacturing a package device according to Embodiment 2 of the present invention will be described with reference to the drawings. FIG. 12 is a cross-sectional view of a packaged device manufactured by the method for manufacturing a packaged device according to the second embodiment. FIG. 13 is a flow chart showing the flow of the method for manufacturing a packaged device according to the second embodiment. In addition, in this specification, in Embodiment 2, the same code|symbol is attached|subjected to the same part as Embodiment 1, and description is abbreviate|omitted.

A method for manufacturing a packaged device according to the second embodiment is a method for manufacturing the packaged device shown in FIG. In Embodiment 1, the package device 1-2 comprises an insulator layer 60, a through electrode 80, a wiring layer 70, and a device chip 20 arranged on the other surface 17 side, as shown in FIG. Except for this, the configuration is the same as that of the package device 1 shown in FIG. 1 of the first embodiment.

The insulator layer 60 is made of an insulator and laminated on the other surface 17 of the substrate 11 of the interposer substrate 10 . In Embodiment 2, the insulator layer 60 is composed of SiO ₂ . The through electrode 80 is made of a conductive metal or the like, and is an electrode called a so-called Through Silicon Via electrode. , and one end is connected to the electrode 21 of the device chip 20 .

The wiring layer 70 on the other surface 17 side includes a conductor portion 71 made of a conductive metal or the like and an insulating portion 72 having an insulating property. At least part of the conductor portion 71 is connected to the other end of the through electrode 80 . The electrode 21 of the device chip 20 on the other surface 17 side is connected to the conductor portion 71 .

As shown in FIG. 13, the method of manufacturing a packaged device according to the second embodiment includes a mounting step ST1, a resin molding step ST2, a grinding step ST3, a dividing step ST4, a through electrode forming step ST10, and a wiring step ST10. and a layer forming step ST11.

(Through electrode formation step)
14 is a cross-sectional view of a main part of an interposer substrate having an insulating layer formed on the other surface side in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG. 15 is a cross-sectional view of a main part of the interposer substrate in which a mask is formed on the insulator layer in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG. 16 is a cross-sectional view of the main part of the interposer substrate after etching from the other surface side in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG. 17 is a cross-sectional view of the main part of the interposer substrate on which the through electrodes are formed in the through electrode forming step of the method of manufacturing the packaged device shown in FIG. 13. FIG.

The through electrode formation step ST10 is a step of holding the flat surface 50 side after performing the grinding step ST3 and forming the through electrode 80 connected to the electrode 21 of the device chip 20 from the other surface 17 side of the interposer substrate 10. be. In the through electrode formation step ST10, the flat surface 50 of the interposer substrate 10 is held after the grinding step ST3, and the insulator layer 60 is laminated on the other surface 17 of the substrate 11 as shown in FIG.

In the through electrode formation step ST10, a photoresist is applied to the insulator layer 60, and the photoresist is exposed to light to expose the insulator layer 60 at positions where the through electrodes 80 are to be formed, as shown in FIG. , a mask 90 is formed to cover portions of the insulator layer 60 other than the positions where the through electrodes 80 are to be formed. In the through electrode formation step ST10, the flat surface 50 side is held, and etching (RIE: Reactive Ion Etching in the second embodiment) is performed on the other surface 17 side through the mask 90 so that the insulator layer 60 exposed from the mask 90 is constant. Work until thick. After that, the mask 90 is removed, a photoresist is applied to the insulating layer 60 except for the deeply dug portion (the center of the etched portion) of the through electrode 80, and the photoresist is exposed to light to form a mask 92 (see FIG. 16). After that, in the through electrode formation step ST10, etching (in the second embodiment, RIE or Bosch process) is performed, and as shown in FIG. And through-holes 91 that penetrate the adhesive layer 16 and reach the electrodes 21 of the device chip 20 are formed.

In the through electrode formation step ST10, after removing the mask 92, the through hole 91 is filled with seed metal and copper plating, and one end of the through hole 91 is connected to the electrode 21 of the device chip 20 as shown in FIG. A through electrode 80 is formed. After forming the through electrode 80, the manufacturing method of the package device proceeds to the wiring layer forming step ST11.

(wiring layer forming step)
18 is a cross-sectional view of the main part of the interposer substrate after the wiring layer forming step in the method of manufacturing the packaged device shown in FIG. 13. FIG. The wiring layer forming step ST11 is a step of forming the wiring layer 70 on the other surface 17 side of the interposer substrate 10 while holding the flat surface 50 side after performing the through electrode forming step ST10.

In the wiring layer forming step ST11, the flat surface 50 side of the interposer substrate 10 is held, and as shown in FIG. A wiring layer 70 is formed on the other ends of the through electrodes 60 and the through electrodes 80 . In addition, the conductor portion 71 connected to the through electrode 80 is made of an aluminum alloy as an example of a conductive metal. After the wiring layer 70 is formed, the manufacturing method of the package device proceeds to the division step ST4.

(division step)
19 is a cross-sectional view of the main part of the interposer substrate after the dividing step of the manufacturing method of the packaged device shown in FIG. 13. FIG. The dividing step ST4 is a step of dividing the interposer or the like into individual package devices 1, as in the first embodiment.

In the second embodiment, in the dividing step ST4, after the electrodes 21 are connected to the conductor portions 71 and the device chips 20 are placed on the other surface 17 side, as in the first embodiment, as shown in FIG. The interposer substrate 10 or the like is divided along the planned lines 101 to divide the interposer substrate 10 or the like into the individual package devices 1 . The method of manufacturing a packaged device ends when the interposer substrate 10 , the gap filling member 30 and the mold resin 40 are divided into individual packaged devices 1 .

In the method of manufacturing a packaged device according to the second embodiment, the gap filling member 30 is installed in the device non-mounting area 103 other than the device mounting area 102 in the mounting step ST1. For this reason, the manufacturing method of the package device can reduce the amount of the mold resin 40, and can also reduce the amount of shrinkage of the mold resin 40 when it is effective. As a result, the method for manufacturing a packaged device can alleviate warpage of the interposer substrate or the like due to shrinkage of the cured mold resin 40, and can suppress warpage after the device chip 20 is covered with the mold resin 40, thereby enabling the next step. This has the effect of facilitating the holding and transport of the interposer substrate 10 and the like.

In addition, since the through-electrodes 80 are formed in the through-electrode forming step ST10 in the manufacturing method of the package device, the mounting density of the device chips 20 of the package device 1-2 can be improved.

It should be noted that the present invention is not limited to the above embodiments. That is, various modifications can be made without departing from the gist of the present invention. In the above-described embodiments and the like, the disk-shaped member 31 having the same diameter as the interposer substrate 10 is used as the gap-filling member 30. However, in the present invention, the gap-filling member 30 is made of silicon, glass, ceramics, A chip-shaped one made of resin or the like may also be used. In this case, the gap filling member 30 may have various sizes such as the same size as the device chip 20, the package device 1, and the like. Further, in the present invention, the gap filling member 30 may have a concave portion corresponding to the device mounting area 102 in the disk-shaped member 31 having the same diameter as the interposer substrate 10 instead of the through hole 32 .

1, 1-2 Package device 10 Interposer substrate 12 One surface 17 The other surface 20 Device chip 30 Gap filling member 31 Same diameter member 32 Through hole (between gap filling members)
40 Mold resin 50 Flat surface 70 Wiring layer 80 Penetrating electrode 101 Scheduled division line 102 Device mounting area 103 Device non-mounting area (area other than device area)
200 grinding device 201 chuck table ST1 mounting step ST2 resin molding step ST3 grinding step ST10 through electrode forming step ST11 wiring layer forming step

Claims (4)

A method for manufacturing a packaged device in which a device chip is arranged in a region partitioned by a dividing line on one surface of an interposer substrate and the device chip is covered with a mold resin,
A device chip is mounted in a device chip mounting area on one surface of an interposer substrate, and a gap filling member thicker than the device chip is supplied to an area other than the device chip mounting area to reduce the amount of mold resin that is supplied. a mounting step installed for
a resin molding step of supplying a mold resin between the gap filling members on one surface side of the interposer substrate after the mounting step, and covering the device chip with the mold resin;
After the resin molding step is performed, the other surface side of the interposer substrate is held by a chuck table of a grinder, and the gap-filling member and the mold resin are ground to form a flat surface composed of the gap-filling member and the mold resin. a grinding step to form a
A method of manufacturing a packaged device in which the interposer substrate and the gap filling member are made of the same material . 2. The method of manufacturing a packaged device according to claim 1, wherein the gap filling member has a through hole or recess corresponding to the device chip mounting area in a member having the same diameter as the interposer substrate. After performing the grinding step, a through electrode forming step of holding the flat surface side and forming a through electrode connected to the electrode of the device chip from the other surface side of the interposer substrate;
3. The package according to claim 1, further comprising a wiring layer forming step of holding the flat surface side and forming a wiring layer on the other surface side of the interposer substrate after performing the through electrode forming step. How the device is manufactured. 4. The method of manufacturing a packaged device according to claim 1, wherein said gap-filling member is made of a material having a shrinkage rate smaller than that of said mold resin.

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