JP7236473B2 - 多重散乱信号に基づく埋設粒子深度値域分類 - Google Patents
多重散乱信号に基づく埋設粒子深度値域分類 Download PDFInfo
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- JP7236473B2 JP7236473B2 JP2020570693A JP2020570693A JP7236473B2 JP 7236473 B2 JP7236473 B2 JP 7236473B2 JP 2020570693 A JP2020570693 A JP 2020570693A JP 2020570693 A JP2020570693 A JP 2020570693A JP 7236473 B2 JP7236473 B2 JP 7236473B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4795—Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4707—Forward scatter; Low angle scatter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4711—Multiangle measurement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4726—Detecting scatter at 90°
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8438—Mutilayers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
- G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
- G01N2201/0638—Refractive parts
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Or Analysing Biological Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862687123P | 2018-06-19 | 2018-06-19 | |
| US62/687,123 | 2018-06-19 | ||
| US16/165,742 US10732130B2 (en) | 2018-06-19 | 2018-10-19 | Embedded particle depth binning based on multiple scattering signals |
| US16/165,742 | 2018-10-19 | ||
| PCT/US2019/036432 WO2019245785A1 (en) | 2018-06-19 | 2019-06-11 | Embedded particle depth binning based on multiple scattering signals |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021527813A JP2021527813A (ja) | 2021-10-14 |
| JP2021527813A5 JP2021527813A5 (https=) | 2022-06-16 |
| JP7236473B2 true JP7236473B2 (ja) | 2023-03-09 |
Family
ID=68840629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020570693A Active JP7236473B2 (ja) | 2018-06-19 | 2019-06-11 | 多重散乱信号に基づく埋設粒子深度値域分類 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10732130B2 (https=) |
| JP (1) | JP7236473B2 (https=) |
| KR (1) | KR102495449B1 (https=) |
| CN (1) | CN112219113B (https=) |
| IL (1) | IL279286B2 (https=) |
| SG (1) | SG11202012061QA (https=) |
| TW (1) | TWI785253B (https=) |
| WO (1) | WO2019245785A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10732130B2 (en) * | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
| US11668658B2 (en) * | 2018-10-08 | 2023-06-06 | Araz Yacoubian | Multi-parameter inspection apparatus for monitoring of additive manufacturing parts |
| JP7206020B2 (ja) * | 2020-11-17 | 2023-01-17 | マシンビジョンライティング株式会社 | 画像観察装置及びその照明光学系 |
| WO2023023701A1 (en) * | 2021-08-24 | 2023-03-02 | Mark Andrew Fraser | Handcart |
| TWI839846B (zh) | 2022-09-15 | 2024-04-21 | 華洋精機股份有限公司 | 可用來判斷透明膜表面的瑕疵位於膜表或膜背的檢測方法及檢測系統 |
| US12092966B2 (en) | 2022-11-23 | 2024-09-17 | Kla Corporation | Device feature specific edge placement error (EPE) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007279040A (ja) | 2006-04-04 | 2007-10-25 | Kla-Tencor Technologies Corp | 光散乱検査システムの構成を決定するためのコンピュータに実装された方法およびシステム |
| JP2009511878A (ja) | 2005-10-06 | 2009-03-19 | ケーエルエー−テンカー テクノロジィース コーポレイション | ウェハを検査する方法及びシステム |
| WO2017117568A1 (en) | 2015-12-31 | 2017-07-06 | Kla-Tencor Corporation | Accelerated training of a machine learning based model for semiconductor applications |
| WO2018067885A1 (en) | 2016-10-07 | 2018-04-12 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
| WO2018071137A1 (en) | 2016-10-14 | 2018-04-19 | Kla-Tencor Corporation | Diagnostic systems and methods for deep learning models configured for semiconductor applications |
| US10732130B2 (en) | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3333631A (en) * | 1964-12-03 | 1967-08-01 | Mobil Oil Corp | Method for optimum miscible flooding of reservoirs using a model to determine input profile |
| US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
| US6181420B1 (en) | 1998-10-06 | 2001-01-30 | Zygo Corporation | Interferometry system having reduced cyclic errors |
| KR20040076742A (ko) * | 2003-02-26 | 2004-09-03 | 삼성전자주식회사 | 결함 분류 방법 및 결함 분류 장치 |
| US6947588B2 (en) | 2003-07-14 | 2005-09-20 | August Technology Corp. | Edge normal process |
| DE10333445B4 (de) * | 2003-07-23 | 2021-10-14 | Leica Microsystems Cms Gmbh | Konfokales Rastermikroskop |
| US7714997B2 (en) * | 2006-11-07 | 2010-05-11 | Hitachi High-Technologies Corporation | Apparatus for inspecting defects |
| US8289527B2 (en) | 2010-04-01 | 2012-10-16 | Tokyo Electron Limited | Optimization of ray tracing and beam propagation parameters |
| US20120316855A1 (en) | 2011-06-08 | 2012-12-13 | Kla-Tencor Corporation | Using Three-Dimensional Representations for Defect-Related Applications |
| US9151940B2 (en) * | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
| KR20140122608A (ko) | 2013-04-10 | 2014-10-20 | 삼성전자주식회사 | 디펙의 깊이 정보 추출 장치 및 방법과 그 디펙의 깊이 정보를 이용한 반도체 공정 개선방법 |
| US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
| US9535010B2 (en) | 2014-05-15 | 2017-01-03 | Kla-Tencor Corp. | Defect sampling for electron beam review based on defect attributes from optical inspection and optical review |
| TWI649932B (zh) * | 2014-06-20 | 2019-02-01 | 美商克萊譚克公司 | 使用面鏡及/或稜鏡之雷射重覆率倍增器及平頂射束分佈產生器 |
| US9606069B2 (en) * | 2014-06-25 | 2017-03-28 | Kla-Tencor Corporation | Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate |
| JP6369860B2 (ja) * | 2014-07-15 | 2018-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
| US9726615B2 (en) * | 2014-07-22 | 2017-08-08 | Kla-Tencor Corporation | System and method for simultaneous dark field and phase contrast inspection |
| WO2017114641A1 (en) * | 2015-12-31 | 2017-07-06 | Asml Holding N.V. | Method and device for focusing in an inspection system |
| EP3333631A1 (en) | 2016-12-06 | 2018-06-13 | ASML Netherlands B.V. | Method of measuring a target, metrology apparatus, polarizer assembly |
-
2018
- 2018-10-19 US US16/165,742 patent/US10732130B2/en active Active
-
2019
- 2019-06-11 IL IL279286A patent/IL279286B2/en unknown
- 2019-06-11 SG SG11202012061QA patent/SG11202012061QA/en unknown
- 2019-06-11 CN CN201980037368.6A patent/CN112219113B/zh active Active
- 2019-06-11 JP JP2020570693A patent/JP7236473B2/ja active Active
- 2019-06-11 WO PCT/US2019/036432 patent/WO2019245785A1/en not_active Ceased
- 2019-06-11 KR KR1020217000554A patent/KR102495449B1/ko active Active
- 2019-06-17 TW TW108120821A patent/TWI785253B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009511878A (ja) | 2005-10-06 | 2009-03-19 | ケーエルエー−テンカー テクノロジィース コーポレイション | ウェハを検査する方法及びシステム |
| JP2007279040A (ja) | 2006-04-04 | 2007-10-25 | Kla-Tencor Technologies Corp | 光散乱検査システムの構成を決定するためのコンピュータに実装された方法およびシステム |
| WO2017117568A1 (en) | 2015-12-31 | 2017-07-06 | Kla-Tencor Corporation | Accelerated training of a machine learning based model for semiconductor applications |
| WO2018067885A1 (en) | 2016-10-07 | 2018-04-12 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
| WO2018071137A1 (en) | 2016-10-14 | 2018-04-19 | Kla-Tencor Corporation | Diagnostic systems and methods for deep learning models configured for semiconductor applications |
| US10732130B2 (en) | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
Also Published As
| Publication number | Publication date |
|---|---|
| IL279286B2 (en) | 2024-02-01 |
| US20190383754A1 (en) | 2019-12-19 |
| US10732130B2 (en) | 2020-08-04 |
| JP2021527813A (ja) | 2021-10-14 |
| TWI785253B (zh) | 2022-12-01 |
| CN112219113A (zh) | 2021-01-12 |
| SG11202012061QA (en) | 2021-01-28 |
| TW202018279A (zh) | 2020-05-16 |
| KR102495449B1 (ko) | 2023-02-06 |
| IL279286A (en) | 2021-01-31 |
| KR20210011057A (ko) | 2021-01-29 |
| WO2019245785A1 (en) | 2019-12-26 |
| CN112219113B (zh) | 2022-03-25 |
| IL279286B1 (en) | 2023-10-01 |
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