SG11202012061QA - Embedded particle depth binning based on multiple scattering signals - Google Patents

Embedded particle depth binning based on multiple scattering signals

Info

Publication number
SG11202012061QA
SG11202012061QA SG11202012061QA SG11202012061QA SG11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA
Authority
SG
Singapore
Prior art keywords
multiple scattering
scattering signals
embedded particle
particle depth
binning based
Prior art date
Application number
SG11202012061QA
Other languages
English (en)
Inventor
Haiping Zhang
Alex Yu (Gang)
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202012061QA publication Critical patent/SG11202012061QA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • G01N21/211Ellipsometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4795Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4707Forward scatter; Low angle scatter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4711Multiangle measurement
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4726Detecting scatter at 90°
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4792Polarisation of scatter light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • G01N2021/8438Mutilayers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8883Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/063Illuminating optical parts
    • G01N2201/0638Refractive parts

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11202012061QA 2018-06-19 2019-06-11 Embedded particle depth binning based on multiple scattering signals SG11202012061QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862687123P 2018-06-19 2018-06-19
US16/165,742 US10732130B2 (en) 2018-06-19 2018-10-19 Embedded particle depth binning based on multiple scattering signals
PCT/US2019/036432 WO2019245785A1 (en) 2018-06-19 2019-06-11 Embedded particle depth binning based on multiple scattering signals

Publications (1)

Publication Number Publication Date
SG11202012061QA true SG11202012061QA (en) 2021-01-28

Family

ID=68840629

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202012061QA SG11202012061QA (en) 2018-06-19 2019-06-11 Embedded particle depth binning based on multiple scattering signals

Country Status (8)

Country Link
US (1) US10732130B2 (https=)
JP (1) JP7236473B2 (https=)
KR (1) KR102495449B1 (https=)
CN (1) CN112219113B (https=)
IL (1) IL279286B2 (https=)
SG (1) SG11202012061QA (https=)
TW (1) TWI785253B (https=)
WO (1) WO2019245785A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10732130B2 (en) * 2018-06-19 2020-08-04 Kla-Tencor Corporation Embedded particle depth binning based on multiple scattering signals
US11668658B2 (en) * 2018-10-08 2023-06-06 Araz Yacoubian Multi-parameter inspection apparatus for monitoring of additive manufacturing parts
JP7206020B2 (ja) * 2020-11-17 2023-01-17 マシンビジョンライティング株式会社 画像観察装置及びその照明光学系
WO2023023701A1 (en) * 2021-08-24 2023-03-02 Mark Andrew Fraser Handcart
TWI839846B (zh) 2022-09-15 2024-04-21 華洋精機股份有限公司 可用來判斷透明膜表面的瑕疵位於膜表或膜背的檢測方法及檢測系統
US12092966B2 (en) 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333631A (en) * 1964-12-03 1967-08-01 Mobil Oil Corp Method for optimum miscible flooding of reservoirs using a model to determine input profile
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
US6181420B1 (en) 1998-10-06 2001-01-30 Zygo Corporation Interferometry system having reduced cyclic errors
KR20040076742A (ko) * 2003-02-26 2004-09-03 삼성전자주식회사 결함 분류 방법 및 결함 분류 장치
US6947588B2 (en) 2003-07-14 2005-09-20 August Technology Corp. Edge normal process
DE10333445B4 (de) * 2003-07-23 2021-10-14 Leica Microsystems Cms Gmbh Konfokales Rastermikroskop
US7554656B2 (en) * 2005-10-06 2009-06-30 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer
US7436505B2 (en) * 2006-04-04 2008-10-14 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
US7714997B2 (en) * 2006-11-07 2010-05-11 Hitachi High-Technologies Corporation Apparatus for inspecting defects
US8289527B2 (en) 2010-04-01 2012-10-16 Tokyo Electron Limited Optimization of ray tracing and beam propagation parameters
US20120316855A1 (en) 2011-06-08 2012-12-13 Kla-Tencor Corporation Using Three-Dimensional Representations for Defect-Related Applications
US9151940B2 (en) * 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
KR20140122608A (ko) 2013-04-10 2014-10-20 삼성전자주식회사 디펙의 깊이 정보 추출 장치 및 방법과 그 디펙의 깊이 정보를 이용한 반도체 공정 개선방법
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9535010B2 (en) 2014-05-15 2017-01-03 Kla-Tencor Corp. Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
TWI649932B (zh) * 2014-06-20 2019-02-01 美商克萊譚克公司 使用面鏡及/或稜鏡之雷射重覆率倍增器及平頂射束分佈產生器
US9606069B2 (en) * 2014-06-25 2017-03-28 Kla-Tencor Corporation Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate
JP6369860B2 (ja) * 2014-07-15 2018-08-08 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
US9726615B2 (en) * 2014-07-22 2017-08-08 Kla-Tencor Corporation System and method for simultaneous dark field and phase contrast inspection
EP3398123B1 (en) * 2015-12-31 2025-03-12 KLA - Tencor Corporation Accelerated training of a machine learning based model for semiconductor applications
WO2017114641A1 (en) * 2015-12-31 2017-07-06 Asml Holding N.V. Method and device for focusing in an inspection system
US10887580B2 (en) * 2016-10-07 2021-01-05 Kla-Tencor Corporation Three-dimensional imaging for semiconductor wafer inspection
US11580398B2 (en) * 2016-10-14 2023-02-14 KLA-Tenor Corp. Diagnostic systems and methods for deep learning models configured for semiconductor applications
EP3333631A1 (en) 2016-12-06 2018-06-13 ASML Netherlands B.V. Method of measuring a target, metrology apparatus, polarizer assembly
US10732130B2 (en) * 2018-06-19 2020-08-04 Kla-Tencor Corporation Embedded particle depth binning based on multiple scattering signals

Also Published As

Publication number Publication date
IL279286B2 (en) 2024-02-01
US20190383754A1 (en) 2019-12-19
US10732130B2 (en) 2020-08-04
JP2021527813A (ja) 2021-10-14
TWI785253B (zh) 2022-12-01
CN112219113A (zh) 2021-01-12
TW202018279A (zh) 2020-05-16
KR102495449B1 (ko) 2023-02-06
IL279286A (en) 2021-01-31
KR20210011057A (ko) 2021-01-29
WO2019245785A1 (en) 2019-12-26
JP7236473B2 (ja) 2023-03-09
CN112219113B (zh) 2022-03-25
IL279286B1 (en) 2023-10-01

Similar Documents

Publication Publication Date Title
IL279286A (en) Pinned particle depth chemistry based on multiple scattering signals
EP3138159A4 (en) Surface scattering antennas with lumped elements
EP3256885A4 (en) Diagenetic and depositional rock analysis
GB2566115B (en) Imaging of a sample through a scattering medium
EP3240801A4 (en) Combination tumor immunotherapy
EP3148729A4 (en) Hydride-coated microparticles and methods for making the same
EP3518974A4 (en) NON-INVASIVE PRENATAL SCREENING USING DYNAMIC ITERATIVE DEEP OPTIMIZATION
GB2556015B (en) Audio Signals
EP3303610A4 (en) Compositions and methods for screening solid tumors
EP3238345A4 (en) Lower-power scrambling with improved signal integrity
EP3126814A4 (en) Methods and systems for cancer diagnosis and prognosis
EP3218902A4 (en) Determining noise and sound power level differences between primary and reference channels
EP3278083A4 (en) Particle detection using reflective surface
GB201604460D0 (en) Dynamic light scattering
EP3338419A4 (en) Methods and apparatuses for transmitting and receiving reference signals
EP3183578B8 (en) Methods for the early detection of colorectal cancer
EP3133991A4 (en) Systems and methods for objectively determining hearing thresholds
EP3329093A4 (en) DETERMINATION OF CARBIDE PARAMETERS BY MEANS OF ULTRASONIC AND MICRO RESISTANCE TRANSDUCERS
GB201609226D0 (en) Audio signals
GB201815329D0 (en) Light-emitting particle
PL3505973T3 (pl) Montowany na pojeździe układ do kontroli rozproszeniem wstecznym
PL3505974T3 (pl) Montowany na pojeździe układ do kontroli rozproszeniem wstecznym
EP3108012A4 (en) Mir-320e and colorectal cancer
EP3137109A4 (en) Methods and compositions for screening and detecting cancer
EP3134769A4 (en) Aligned particle layer