SG11202012061QA - Embedded particle depth binning based on multiple scattering signals - Google Patents
Embedded particle depth binning based on multiple scattering signalsInfo
- Publication number
- SG11202012061QA SG11202012061QA SG11202012061QA SG11202012061QA SG11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA
- Authority
- SG
- Singapore
- Prior art keywords
- multiple scattering
- scattering signals
- embedded particle
- particle depth
- binning based
- Prior art date
Links
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4795—Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4707—Forward scatter; Low angle scatter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4711—Multiangle measurement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4726—Detecting scatter at 90°
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8438—Mutilayers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
- G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
- G01N2201/0638—Refractive parts
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862687123P | 2018-06-19 | 2018-06-19 | |
US16/165,742 US10732130B2 (en) | 2018-06-19 | 2018-10-19 | Embedded particle depth binning based on multiple scattering signals |
PCT/US2019/036432 WO2019245785A1 (en) | 2018-06-19 | 2019-06-11 | Embedded particle depth binning based on multiple scattering signals |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202012061QA true SG11202012061QA (en) | 2021-01-28 |
Family
ID=68840629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202012061QA SG11202012061QA (en) | 2018-06-19 | 2019-06-11 | Embedded particle depth binning based on multiple scattering signals |
Country Status (8)
Country | Link |
---|---|
US (1) | US10732130B2 (en) |
JP (1) | JP7236473B2 (en) |
KR (1) | KR102495449B1 (en) |
CN (1) | CN112219113B (en) |
IL (1) | IL279286B2 (en) |
SG (1) | SG11202012061QA (en) |
TW (1) | TWI785253B (en) |
WO (1) | WO2019245785A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10732130B2 (en) * | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
US11668658B2 (en) * | 2018-10-08 | 2023-06-06 | Araz Yacoubian | Multi-parameter inspection apparatus for monitoring of additive manufacturing parts |
JP7206020B2 (en) * | 2020-11-17 | 2023-01-17 | マシンビジョンライティング株式会社 | Image observation device and its illumination optical system |
WO2023023701A1 (en) * | 2021-08-24 | 2023-03-02 | Mark Andrew Fraser | Handcart |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3333631A (en) * | 1964-12-03 | 1967-08-01 | Mobil Oil Corp | Method for optimum miscible flooding of reservoirs using a model to determine input profile |
US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
US6181420B1 (en) | 1998-10-06 | 2001-01-30 | Zygo Corporation | Interferometry system having reduced cyclic errors |
KR20040076742A (en) * | 2003-02-26 | 2004-09-03 | 삼성전자주식회사 | Apparatus and method for automatically classifying a defect |
US6947588B2 (en) | 2003-07-14 | 2005-09-20 | August Technology Corp. | Edge normal process |
DE10333445B4 (en) * | 2003-07-23 | 2021-10-14 | Leica Microsystems Cms Gmbh | Scanning confocal microscope |
US7554656B2 (en) | 2005-10-06 | 2009-06-30 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of a wafer |
US7436505B2 (en) * | 2006-04-04 | 2008-10-14 | Kla-Tencor Technologies Corp. | Computer-implemented methods and systems for determining a configuration for a light scattering inspection system |
US7714997B2 (en) | 2006-11-07 | 2010-05-11 | Hitachi High-Technologies Corporation | Apparatus for inspecting defects |
US8289527B2 (en) | 2010-04-01 | 2012-10-16 | Tokyo Electron Limited | Optimization of ray tracing and beam propagation parameters |
US20120316855A1 (en) | 2011-06-08 | 2012-12-13 | Kla-Tencor Corporation | Using Three-Dimensional Representations for Defect-Related Applications |
US9151940B2 (en) * | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
KR20140122608A (en) | 2013-04-10 | 2014-10-20 | 삼성전자주식회사 | Apparatus and method for extracting depth information of defect, and method for improving semiconductor process using the depth information of defect |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
US9535010B2 (en) | 2014-05-15 | 2017-01-03 | Kla-Tencor Corp. | Defect sampling for electron beam review based on defect attributes from optical inspection and optical review |
TWI649932B (en) * | 2014-06-20 | 2019-02-01 | 美商克萊譚克公司 | Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms |
US9606069B2 (en) * | 2014-06-25 | 2017-03-28 | Kla-Tencor Corporation | Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate |
JP6369860B2 (en) * | 2014-07-15 | 2018-08-08 | 株式会社日立ハイテクノロジーズ | Defect observation method and apparatus |
US9726615B2 (en) * | 2014-07-22 | 2017-08-08 | Kla-Tencor Corporation | System and method for simultaneous dark field and phase contrast inspection |
EP3398123A4 (en) * | 2015-12-31 | 2019-08-28 | KLA - Tencor Corporation | Accelerated training of a machine learning based model for semiconductor applications |
WO2017114641A1 (en) * | 2015-12-31 | 2017-07-06 | Asml Holding N.V. | Method and device for focusing in an inspection system |
US10887580B2 (en) | 2016-10-07 | 2021-01-05 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
US11580398B2 (en) * | 2016-10-14 | 2023-02-14 | KLA-Tenor Corp. | Diagnostic systems and methods for deep learning models configured for semiconductor applications |
EP3333631A1 (en) | 2016-12-06 | 2018-06-13 | ASML Netherlands B.V. | Method of measuring a target, metrology apparatus, polarizer assembly |
US10732130B2 (en) * | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
-
2018
- 2018-10-19 US US16/165,742 patent/US10732130B2/en active Active
-
2019
- 2019-06-11 JP JP2020570693A patent/JP7236473B2/en active Active
- 2019-06-11 IL IL279286A patent/IL279286B2/en unknown
- 2019-06-11 SG SG11202012061QA patent/SG11202012061QA/en unknown
- 2019-06-11 CN CN201980037368.6A patent/CN112219113B/en active Active
- 2019-06-11 KR KR1020217000554A patent/KR102495449B1/en active IP Right Grant
- 2019-06-11 WO PCT/US2019/036432 patent/WO2019245785A1/en active Application Filing
- 2019-06-17 TW TW108120821A patent/TWI785253B/en active
Also Published As
Publication number | Publication date |
---|---|
WO2019245785A1 (en) | 2019-12-26 |
CN112219113B (en) | 2022-03-25 |
US20190383754A1 (en) | 2019-12-19 |
IL279286B1 (en) | 2023-10-01 |
CN112219113A (en) | 2021-01-12 |
KR20210011057A (en) | 2021-01-29 |
JP7236473B2 (en) | 2023-03-09 |
IL279286A (en) | 2021-01-31 |
JP2021527813A (en) | 2021-10-14 |
TW202018279A (en) | 2020-05-16 |
IL279286B2 (en) | 2024-02-01 |
KR102495449B1 (en) | 2023-02-06 |
US10732130B2 (en) | 2020-08-04 |
TWI785253B (en) | 2022-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL279286A (en) | Embedded particle depth binning based on multiple scattering signals | |
EP3516006A4 (en) | Abrasive particle with enhanced retention features | |
EP3454635A4 (en) | Seed trench depth detection systems | |
EP3138159A4 (en) | Surface scattering antennas with lumped elements | |
EP3256885A4 (en) | Diagenetic and depositional rock analysis | |
EP3240801A4 (en) | Combination tumor immunotherapy | |
EP3105526A4 (en) | Drum magazine assembly and methods | |
EP3414960A4 (en) | Methods and apparatuses for transmitting and receiving reference signals | |
EP3291979A4 (en) | Slidable anti-fatigue mat | |
EP3518974A4 (en) | Noninvasive prenatal screening using dynamic iterative depth optimization | |
EP3238345A4 (en) | Lower-power scrambling with improved signal integrity | |
EP3218902A4 (en) | Determining noise and sound power level differences between primary and reference channels | |
EP3658874A4 (en) | Mobile-platform compression-induced imaging for subsurface and surface object characterization | |
EP3278083A4 (en) | Particle detection using reflective surface | |
EP3338419A4 (en) | Methods and apparatuses for transmitting and receiving reference signals | |
EP3329093A4 (en) | Determining borehole parameters using ultrasonic and micro-resistivity calipers | |
GB201604460D0 (en) | Dynamic light scattering | |
EP3475523A4 (en) | Surface well testing systems and methods | |
EP3183578B8 (en) | Methods for the early detection of colorectal cancer | |
EP3374580A4 (en) | Surface covering having an improved wear layer | |
EP3287267A4 (en) | Structure with solid particles distributed on surface | |
EP3310915A4 (en) | Tumor immunotherapy | |
EP3458037A4 (en) | Fluorochemical targeted therapies | |
GB201815329D0 (en) | Light-emitting particle | |
EP3154547A4 (en) | Pyrimidine compounds and methods using the same |