TWI785253B - 基於多個散射信號之嵌入式粒子深度分級 - Google Patents
基於多個散射信號之嵌入式粒子深度分級 Download PDFInfo
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- TWI785253B TWI785253B TW108120821A TW108120821A TWI785253B TW I785253 B TWI785253 B TW I785253B TW 108120821 A TW108120821 A TW 108120821A TW 108120821 A TW108120821 A TW 108120821A TW I785253 B TWI785253 B TW I785253B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4795—Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4707—Forward scatter; Low angle scatter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4711—Multiangle measurement
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4726—Detecting scatter at 90°
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8438—Mutilayers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
- G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
- G01N2201/0638—Refractive parts
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Or Analysing Biological Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862687123P | 2018-06-19 | 2018-06-19 | |
| US62/687,123 | 2018-06-19 | ||
| US16/165,742 US10732130B2 (en) | 2018-06-19 | 2018-10-19 | Embedded particle depth binning based on multiple scattering signals |
| US16/165,742 | 2018-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202018279A TW202018279A (zh) | 2020-05-16 |
| TWI785253B true TWI785253B (zh) | 2022-12-01 |
Family
ID=68840629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108120821A TWI785253B (zh) | 2018-06-19 | 2019-06-17 | 基於多個散射信號之嵌入式粒子深度分級 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10732130B2 (https=) |
| JP (1) | JP7236473B2 (https=) |
| KR (1) | KR102495449B1 (https=) |
| CN (1) | CN112219113B (https=) |
| IL (1) | IL279286B2 (https=) |
| SG (1) | SG11202012061QA (https=) |
| TW (1) | TWI785253B (https=) |
| WO (1) | WO2019245785A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10732130B2 (en) * | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
| US11668658B2 (en) * | 2018-10-08 | 2023-06-06 | Araz Yacoubian | Multi-parameter inspection apparatus for monitoring of additive manufacturing parts |
| JP7206020B2 (ja) * | 2020-11-17 | 2023-01-17 | マシンビジョンライティング株式会社 | 画像観察装置及びその照明光学系 |
| WO2023023701A1 (en) * | 2021-08-24 | 2023-03-02 | Mark Andrew Fraser | Handcart |
| TWI839846B (zh) | 2022-09-15 | 2024-04-21 | 華洋精機股份有限公司 | 可用來判斷透明膜表面的瑕疵位於膜表或膜背的檢測方法及檢測系統 |
| US12092966B2 (en) | 2022-11-23 | 2024-09-17 | Kla Corporation | Device feature specific edge placement error (EPE) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050018282A1 (en) * | 2003-07-23 | 2005-01-27 | Leica Microsystems Heidelberg Gmbh | Confocal scanning microscope |
| US20080144023A1 (en) * | 2006-11-07 | 2008-06-19 | Yukihiro Shibata | Apparatus for inspecting defects |
| TW201433030A (zh) * | 2012-12-05 | 2014-08-16 | 克萊譚克公司 | 使用雷射脈衝倍增器之半導體檢測和計量系統 |
| TW201603424A (zh) * | 2014-06-20 | 2016-01-16 | 克萊譚克公司 | 使用面鏡及/或稜鏡之雷射重覆率倍增器及平頂射束分佈產生器 |
| TW201734435A (zh) * | 2015-12-31 | 2017-10-01 | Asml控股公司 | 用於在檢測系統中聚焦的方法及裝置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3333631A (en) * | 1964-12-03 | 1967-08-01 | Mobil Oil Corp | Method for optimum miscible flooding of reservoirs using a model to determine input profile |
| US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
| US6181420B1 (en) | 1998-10-06 | 2001-01-30 | Zygo Corporation | Interferometry system having reduced cyclic errors |
| KR20040076742A (ko) * | 2003-02-26 | 2004-09-03 | 삼성전자주식회사 | 결함 분류 방법 및 결함 분류 장치 |
| US6947588B2 (en) | 2003-07-14 | 2005-09-20 | August Technology Corp. | Edge normal process |
| US7554656B2 (en) * | 2005-10-06 | 2009-06-30 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of a wafer |
| US7436505B2 (en) * | 2006-04-04 | 2008-10-14 | Kla-Tencor Technologies Corp. | Computer-implemented methods and systems for determining a configuration for a light scattering inspection system |
| US8289527B2 (en) | 2010-04-01 | 2012-10-16 | Tokyo Electron Limited | Optimization of ray tracing and beam propagation parameters |
| US20120316855A1 (en) | 2011-06-08 | 2012-12-13 | Kla-Tencor Corporation | Using Three-Dimensional Representations for Defect-Related Applications |
| KR20140122608A (ko) | 2013-04-10 | 2014-10-20 | 삼성전자주식회사 | 디펙의 깊이 정보 추출 장치 및 방법과 그 디펙의 깊이 정보를 이용한 반도체 공정 개선방법 |
| US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
| US9535010B2 (en) | 2014-05-15 | 2017-01-03 | Kla-Tencor Corp. | Defect sampling for electron beam review based on defect attributes from optical inspection and optical review |
| US9606069B2 (en) * | 2014-06-25 | 2017-03-28 | Kla-Tencor Corporation | Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate |
| JP6369860B2 (ja) * | 2014-07-15 | 2018-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
| US9726615B2 (en) * | 2014-07-22 | 2017-08-08 | Kla-Tencor Corporation | System and method for simultaneous dark field and phase contrast inspection |
| EP3398123B1 (en) * | 2015-12-31 | 2025-03-12 | KLA - Tencor Corporation | Accelerated training of a machine learning based model for semiconductor applications |
| US10887580B2 (en) * | 2016-10-07 | 2021-01-05 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
| US11580398B2 (en) * | 2016-10-14 | 2023-02-14 | KLA-Tenor Corp. | Diagnostic systems and methods for deep learning models configured for semiconductor applications |
| EP3333631A1 (en) | 2016-12-06 | 2018-06-13 | ASML Netherlands B.V. | Method of measuring a target, metrology apparatus, polarizer assembly |
| US10732130B2 (en) * | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
-
2018
- 2018-10-19 US US16/165,742 patent/US10732130B2/en active Active
-
2019
- 2019-06-11 IL IL279286A patent/IL279286B2/en unknown
- 2019-06-11 SG SG11202012061QA patent/SG11202012061QA/en unknown
- 2019-06-11 CN CN201980037368.6A patent/CN112219113B/zh active Active
- 2019-06-11 JP JP2020570693A patent/JP7236473B2/ja active Active
- 2019-06-11 WO PCT/US2019/036432 patent/WO2019245785A1/en not_active Ceased
- 2019-06-11 KR KR1020217000554A patent/KR102495449B1/ko active Active
- 2019-06-17 TW TW108120821A patent/TWI785253B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050018282A1 (en) * | 2003-07-23 | 2005-01-27 | Leica Microsystems Heidelberg Gmbh | Confocal scanning microscope |
| US20080144023A1 (en) * | 2006-11-07 | 2008-06-19 | Yukihiro Shibata | Apparatus for inspecting defects |
| TW201433030A (zh) * | 2012-12-05 | 2014-08-16 | 克萊譚克公司 | 使用雷射脈衝倍增器之半導體檢測和計量系統 |
| TW201739129A (zh) * | 2012-12-05 | 2017-11-01 | 克萊譚克公司 | 使用雷射脈衝倍增器之半導體檢測和計量系統 |
| TW201603424A (zh) * | 2014-06-20 | 2016-01-16 | 克萊譚克公司 | 使用面鏡及/或稜鏡之雷射重覆率倍增器及平頂射束分佈產生器 |
| TW201734435A (zh) * | 2015-12-31 | 2017-10-01 | Asml控股公司 | 用於在檢測系統中聚焦的方法及裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| IL279286B2 (en) | 2024-02-01 |
| US20190383754A1 (en) | 2019-12-19 |
| US10732130B2 (en) | 2020-08-04 |
| JP2021527813A (ja) | 2021-10-14 |
| CN112219113A (zh) | 2021-01-12 |
| SG11202012061QA (en) | 2021-01-28 |
| TW202018279A (zh) | 2020-05-16 |
| KR102495449B1 (ko) | 2023-02-06 |
| IL279286A (en) | 2021-01-31 |
| KR20210011057A (ko) | 2021-01-29 |
| WO2019245785A1 (en) | 2019-12-26 |
| JP7236473B2 (ja) | 2023-03-09 |
| CN112219113B (zh) | 2022-03-25 |
| IL279286B1 (en) | 2023-10-01 |
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