JP7228558B2 - 透過菊池回折パターンの改良方法 - Google Patents

透過菊池回折パターンの改良方法 Download PDF

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JP7228558B2
JP7228558B2 JP2020199270A JP2020199270A JP7228558B2 JP 7228558 B2 JP7228558 B2 JP 7228558B2 JP 2020199270 A JP2020199270 A JP 2020199270A JP 2020199270 A JP2020199270 A JP 2020199270A JP 7228558 B2 JP7228558 B2 JP 7228558B2
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tkd
pattern
sample
electron
diffraction
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JP2021097039A5 (enExample
JP2021097039A (ja
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シュワッガー トーマス
ラドゥ ゴラン ダニエル
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Bruker Nano GmbH
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Bruker Nano GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/2055—Analysing diffraction patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G01N2223/0565—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction diffraction of electrons, e.g. LEED
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G01N2223/0566—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction analysing diffraction pattern
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/102—Different kinds of radiation or particles beta or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/401—Imaging image processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/605—Specific applications or type of materials phases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/607—Specific applications or type of materials strain
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20207—Tilt

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2020199270A 2019-12-13 2020-12-01 透過菊池回折パターンの改良方法 Active JP7228558B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP19216196 2019-12-13
EP19216196.6A EP3835768B1 (en) 2019-12-13 2019-12-13 Method for improving kikuchi diffraction patterns

Publications (3)

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JP2021097039A JP2021097039A (ja) 2021-06-24
JP2021097039A5 JP2021097039A5 (enExample) 2023-01-19
JP7228558B2 true JP7228558B2 (ja) 2023-02-24

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US (1) US11270867B2 (enExample)
EP (1) EP3835768B1 (enExample)
JP (1) JP7228558B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3736561B1 (en) * 2019-05-08 2021-05-05 Bruker Nano GmbH Method for improving an ebsd/tkd map
EP3770945B1 (en) * 2019-07-26 2024-06-19 Bruker Nano GmbH Kikuchi diffraction detector
EP3835768B1 (en) * 2019-12-13 2021-10-27 Bruker Nano GmbH Method for improving kikuchi diffraction patterns
CN113720865B (zh) * 2021-08-06 2022-09-02 清华大学 自动矫正样品带轴偏离的电子层叠成像方法及装置
GB202208289D0 (en) * 2022-06-06 2022-07-20 Oxford Instruments Nanotechnology Tools Ltd Ebsd data enhancement using simulated pattern matching
US11996264B1 (en) * 2023-09-06 2024-05-28 Honeywell Federal Manufacturing & Technologies, Llc Sample mount for electron backscatter diffraction

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555817B1 (en) 2000-05-17 2003-04-29 Thermo Noran Inc. Method and apparatus for correcting magnetic field distortions in electron backscatter diffraction patterns obtained in an electron microscope
JP2006292764A (ja) 2005-04-05 2006-10-26 Oxford Instruments Analytical Ltd 後方散乱電子回折パターンの歪みを修正する方法
WO2020217297A1 (ja) 2019-04-23 2020-10-29 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の制御方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201302694D0 (en) * 2013-02-15 2013-04-03 Oxford Instr Nanotechnology Tools Ltd Method of electron beam diffraction analysis
GB201402318D0 (en) * 2014-02-11 2014-03-26 Oxford Instr Nanotechnology Tools Ltd Method for materials analysis
DE102014208295A1 (de) * 2014-05-02 2015-11-05 Bruker Nano Gmbh Verfahren und Anordnung zur Identifikation kristalliner Phasen sowie ein entsprechendes Computerprogramm und ein entsprechendes computerlesbares Speichermedium
DE102014226985B4 (de) * 2014-12-23 2024-02-08 Carl Zeiss Microscopy Gmbh Verfahren zum Analysieren eines Objekts, Computerprogrammprodukt sowie Teilchenstrahlgerät zur Durchführung des Verfahrens
EP3121593B1 (en) * 2015-07-23 2023-11-08 Carl Zeiss Microscopy GmbH Method of determining crystallographic properties of a sample and electron beam microscope for performing the method
FR3074949B1 (fr) * 2017-12-11 2019-12-20 Electricite De France Procede, dispositif et programme de traitement d'images de diffraction d'un materiau cristallin
EP3770945B1 (en) * 2019-07-26 2024-06-19 Bruker Nano GmbH Kikuchi diffraction detector
EP3835768B1 (en) * 2019-12-13 2021-10-27 Bruker Nano GmbH Method for improving kikuchi diffraction patterns

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555817B1 (en) 2000-05-17 2003-04-29 Thermo Noran Inc. Method and apparatus for correcting magnetic field distortions in electron backscatter diffraction patterns obtained in an electron microscope
JP2006292764A (ja) 2005-04-05 2006-10-26 Oxford Instruments Analytical Ltd 後方散乱電子回折パターンの歪みを修正する方法
WO2020217297A1 (ja) 2019-04-23 2020-10-29 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の制御方法
JP7187685B2 (ja) 2019-04-23 2022-12-12 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の制御方法

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EP3835768B1 (en) 2021-10-27
US20210183612A1 (en) 2021-06-17
US11270867B2 (en) 2022-03-08
JP2021097039A (ja) 2021-06-24
EP3835768A1 (en) 2021-06-16

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