JP7223715B2 - 金属-セラミック基板のレーザアブレーション方法及びその基板 - Google Patents
金属-セラミック基板のレーザアブレーション方法及びその基板 Download PDFInfo
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Description
y≦4.7 ln x-15 (1)
ここで、
x=レーザ出力(W)、及び
y=最大レーザ加工速度(有効)(m/秒)。
y≦=5.0 ln x-18 (2)
ここで、
x=レーザ出力(W)、及び
y=最大レーザ加工速度(有効)(m/秒)。
レーザの加工速度は、好ましくは少なくとも0.20m/秒、より好ましくは少なくとも0.50m/秒、より好ましくは少なくとも0.60m/秒、より好ましくは少なくとも0.70m/秒、より好ましくは少なくとも0.80m/秒、より好ましくは少なくとも1.00m/秒である。
ここで、x=レーザ出力(W)、y=レーザの最大加工速度(有効)である。
I)上部金属コーティングを部分的にのみ切除するか、またはセラミックまで切斷すること、および、例えば、エッチングプロセスでは不可能である微細構造を金属コーティングに生成すること;
II)金属コーティングおよびセラミック基板を下側金属コーティングまで切断すること(したがって、スルーホールの基礎を作ることができる。適切なブラインドホールに導電性材料を充填する場合、スルーホールが作られる。充填材料は例えば、金属ペースト、金属成形品、例えば、円筒、または電気的に生成された材料);
III)機能的凹部、例えば、ねじ止め用、を形成するために、金属コーティング及びセラミック基板を完全に切断すること。
特に、前記少なくとも1つの化合物は酸化アルミニウムであり、酸化アルミニウムは、より好ましくは0.01μm~25μmの範囲の粒径を有する。
レーザ出力: 100Wまで可変
レーザ源: IR
パルス長: 0.1~100ps
パルスエネルギー: 10~500μJ
スポット径: 30μm
周波数レーザ: 350~650kHz
一般的な許容範囲: y≦4,7 ln x-15
好ましい範囲: y≦5,0 ln x-18
上記式において、
x=レーザ出力(W)、及び
y=レーザ速度(有効)。
(1)レーザ出力
30W以上のレーザ出力が好ましい。
さらに好ましいのは、(経済的な理由から)60W以上のレーザ出力である。
より好ましくは、80W以上のレーザ出力である。
(2)レーザ速度
好ましいのは、0.2m/秒以上のレーザ速度(有効)である。
さらに好ましいのは、0.5m/秒以上のレーザ速度である。
より好ましいのは、0.75m/秒以上のレーザ速度である。
第1の例-本発明による
a.上記パラメータ
b.レーザ出力:70ワット
c.レーザ速度(有効):1.0m/秒
d.セラミック厚0.63mm;銅厚0.30mm
e.結果:
i.良好な光学的外観
ii.溶融相はごくわずかであり;銅酸化はごくわずかである
iii.表面の光学的粗さが低い
iv.許容可能な処理速度
a.上記パラメータ
b.レーザ出力:100ワット
c.レーザ速度(有効):1.5m/秒
d.セラミック厚0.38mm;銅厚0.30mm
e.結果:
i.許容可能な光学的外観
ii.溶融相の増加と銅の酸化
iii.表面の光学的粗さがより高い
iv.処理速度が遅い
a.上記パラメータ
b.レーザ出力:50ワット
c.レーザ速度(有効):3.0m/秒
d.セラミック厚0.63mm;銅厚0.25mm
e.結果:
i.非常に良好な光学的外観
ii.溶融相および銅酸化はほとんどない
iii.表面の光学的粗さはほとんどない
iv.処理速度は非常に低い;経済的な理由からこの方法はあまり適していない。
a.上記パラメータ
b.レーザ出力:60ワット
c.レーザ速度(有効):6m/秒
d.セラミック厚0.38mm;銅厚0.20mm
e.結果:
i.銅は非常にゆっくりとアブレーションされる
ii.処理速度が遅すぎる
iii.残渣はほとんどない
iv.表面の光学的粗さは非常に低い
v.処理速度が低すぎて経済的な理由からこの方法を適用することができない
a.上記パラメータ
b.レーザ出力:90ワット
c.レーザ速度(有効):0.25m/秒
d.セラミック厚0.63mm;銅厚0.30mm
e.結果:
i.多くの溶融相が表面に残る
ii.銅は高度に酸化される
iii.残渣はほとんどない
iv.表面の光学的粗さは非常に高い
v.品質の要求が低い用途ではパラメータ領域は高い経済効率で与えられる
a.上記パラメータ
b.レーザ出力:100ワット
c.レーザ速度(有効):0.15m/秒
d.セラミック厚0.63mm;銅厚0.40mm
e.結果:
i.銅アブレーションの品質は非常に悪く、これらのプロセスパラメータの使用は期待されない
ii.材料は加工中に非常に暖かくなる
iii.プロセスパラメータは技術的に実現不可能である
Claims (9)
- 金属-セラミック基板のアブレーションのための方法であって、
前記方法は、前記アブレーションの縁部付近のレーザアブレーションによって放出された金属粒子から分離することができる、前記金属-セラミック基板上の固体金属粒子の形成が本質的に回避されるプロセス条件下で使用されるレーザを用いて実行され、
前記レーザは、前記レーザの出力(W)と、前記レーザの最大加工速度(m/秒)との関係が下記式(1)に対応するように使用され、
前記レーザは、IR-p秒レーザであることを特徴とする、金属-セラミック基板のアブレーションのための方法。
y≦4.7 ln x-15 (1)
上記式において、
x=レーザ出力(W)、及び
y=レーザ加工速度(有効)(m/秒)。 - 前記レーザは、前記レーザの出力(W)と、前記レーザの最大加工速度(m/秒)との関係が下記式(2)に対応するように使用されることを特徴とする請求項1に記載の方法。
y≦5.0 ln x-18 (2)
上記式において、
x=レーザ出力(W)、及び
y=レーザ速度(有効)(m/秒)。 - 前記レーザの加工速度が少なくとも0.50m/秒であることを特徴とする請求項1又は2に記載の方法。
- 前記p秒レーザは、0.10~100.00psのパルス持続時間を有することを特徴とする請求項1~3のいずれか1項に記載の方法。
- 前記p秒レーザは、10.00~500.00μJのパルスエネルギーを有することを特徴とする請求項1~4のいずれか1項に記載の方法。
- 前記p秒レーザは、20.00~400.00Wの出力を有することを特徴とする請求項1~5のいずれか1項に記載の方法。
- 前記金属が、セラミックス基板上に塗布される銅層または銅箔であることを特徴とする請求項1~6のいずれか1項に記載の方法。
- 前記金属-セラミック基板がDCB基板であることを特徴とする請求項1~7のいずれか1項に記載の方法。
- 金属-セラミック基板のアブレーションのための、請求項1~6のいずれか1項に記載の特徴を有するレーザの使用。
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PCT/EP2018/066593 WO2018234457A1 (en) | 2017-06-21 | 2018-06-21 | METHOD FOR LASER ABLATION OF METAL-CERAMIC SUBSTRATE; CORRESPONDING SUBSTRATE |
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WO2009139337A1 (ja) * | 2008-05-13 | 2009-11-19 | 旭硝子株式会社 | 酸化物層付き基体とその製造方法 |
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