JP5557294B2 - 伝導性エミッション保護 - Google Patents
伝導性エミッション保護 Download PDFInfo
- Publication number
- JP5557294B2 JP5557294B2 JP2011527857A JP2011527857A JP5557294B2 JP 5557294 B2 JP5557294 B2 JP 5557294B2 JP 2011527857 A JP2011527857 A JP 2011527857A JP 2011527857 A JP2011527857 A JP 2011527857A JP 5557294 B2 JP5557294 B2 JP 5557294B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layers
- conductive
- insulating
- conductive layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
Landscapes
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
- Ceramic Capacitors (AREA)
Description
但し、Aは、導電層の表面積であり、
dは、導電層の間の距離であり、
εrは、与えられた材料の誘電率であり、
ε0は、空気の標準誘電率である。
Claims (12)
- 対応する複数の導電層によって隔離された複数の絶縁耐力絶縁層を備える多層基板であって、複数の絶縁耐力絶縁層のそれぞれが、1μm当たり少なくとも約6.25Vの絶縁耐力を有し、複数の導電層の1つが、複数の導電層の別の1つと短絡されており、多層基板は、
接地構造と、
接地構造上に形成された第1の絶縁層と、
第1の絶縁層上に形成された第1の導電層と、
第1の導電層と接地構造との間の実効寄生キャパシタンスと、
第1の導電層上に形成された第2の絶縁層と、
第2の絶縁層上に形成された第2の導電層と、
2つの導電層の間の電気的接続であって、第1の導電層と接地構造との間の実効寄生キャパシタンスの効果を打ち消す第2の実効寄生キャパシタンスを与える、電気的接続と、
を備えることを特徴とする多層基板。 - 複数の絶縁層の少なくとも1つが、レーザ堆積法を用いて形成されることを特徴とする請求項1記載の基板。
- 複数の絶縁層の少なくとも1つが、Eビーム堆積法を用いて形成されることを特徴とする請求項1記載の基板。
- 複数の絶縁層の少なくとも1つが、炭化ケイ素、窒化ケイ素、二酸化ケイ素、窒化アルミニウム、酸化アルミニウム、アルミナ、二酸化ハフニウム、およびハフニアから成る群より選択される少なくとも1つの材料を含むことを特徴とする請求項2記載の基板。
- 複数の導電層の少なくとも1つが、レーザ堆積法を用いて形成されることを特徴とする請求項2記載の基板。
- 複数の導電層の少なくとも1つが、銅、アルミニウム、ニッケル、および金から成る群より選択される少なくとも1つの材料を含むことを特徴とする請求項5記載の基板。
- 複数の導電層の1つに結合されたダイをさらに備えることを特徴とする請求項1記載の基板。
- ダイはスイッチに相当することを特徴とする請求項7記載の基板。
- 複数の導電層および複数の絶縁層は、熱を伝達するように作動可能であることを特徴とする請求項6記載の基板。
- 複数の絶縁層の1つおよび複数の導電層の1つが一緒にファラデー遮蔽を形成することを特徴とする請求項1記載の基板。
- 複数の絶縁耐力絶縁層のそれぞれが、1μm当たり19.68Vを超える絶縁耐力を有することを特徴とする請求項1記載の基板。
- 複数の絶縁層の少なくとも1つが、炭化ケイ素を含むことを特徴とする請求項1記載の基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/212,975 US8242375B2 (en) | 2008-09-18 | 2008-09-18 | Conductive emissions protection |
US12/212,975 | 2008-09-18 | ||
PCT/US2009/053671 WO2010033325A1 (en) | 2008-09-18 | 2009-08-13 | Conductive emissions protection |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012503333A JP2012503333A (ja) | 2012-02-02 |
JP5557294B2 true JP5557294B2 (ja) | 2014-07-23 |
Family
ID=41139092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011527857A Expired - Fee Related JP5557294B2 (ja) | 2008-09-18 | 2009-08-13 | 伝導性エミッション保護 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8242375B2 (ja) |
EP (1) | EP2338174A1 (ja) |
JP (1) | JP5557294B2 (ja) |
CN (1) | CN102160174B (ja) |
WO (1) | WO2010033325A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10243248B2 (en) * | 2013-12-31 | 2019-03-26 | Skyworks Solutions, Inc. | Devices and methods related to high power diode switches |
JP2016162904A (ja) * | 2015-03-03 | 2016-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6447391B2 (ja) * | 2015-06-30 | 2019-01-09 | オムロン株式会社 | 電力変換装置 |
US9935677B2 (en) | 2015-06-30 | 2018-04-03 | Skyworks Solutions, Inc. | Devices and methods related to high power diode switches with low DC power consumption |
CN112272866B (zh) * | 2018-06-21 | 2024-02-09 | 三菱电机株式会社 | 功率模块装置 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4323756A (en) | 1979-10-29 | 1982-04-06 | United Technologies Corporation | Method for fabricating articles by sequential layer deposition |
US4523528A (en) * | 1979-12-11 | 1985-06-18 | Transaction Security, Inc. | Insulating apparatus and composite laminates employed therein |
JPS5777320A (en) | 1980-10-27 | 1982-05-14 | Mitsubishi Electric Corp | Boronized fiber and its preparation |
JPS61147404A (ja) * | 1984-12-18 | 1986-07-05 | 太陽誘電株式会社 | 誘電体磁器組成物 |
US4814232A (en) | 1987-03-25 | 1989-03-21 | United Technologies Corporation | Method for depositing laser mirror coatings |
US5106461A (en) * | 1989-04-04 | 1992-04-21 | Massachusetts Institute Of Technology | High-density, multi-level interconnects, flex circuits, and tape for tab |
US5052102A (en) | 1989-06-19 | 1991-10-01 | Shell Oil Company | Laser induced electrical connection of integrated circuits |
GB2236540A (en) | 1989-07-07 | 1991-04-10 | United Technologies Corp | Boron nitride coated fibres |
US5079069A (en) * | 1989-08-23 | 1992-01-07 | Zycon Corporation | Capacitor laminate for use in capacitive printed circuit boards and methods of manufacture |
US5306560A (en) | 1991-01-07 | 1994-04-26 | United Technologies Corporation | Ceramic coated fibers |
US5449536A (en) | 1992-12-18 | 1995-09-12 | United Technologies Corporation | Method for the application of coatings of oxide dispersion strengthened metals by laser powder injection |
US5386798A (en) | 1993-10-06 | 1995-02-07 | Martin Marietta Energy Systems, Inc. | Method for continuous control of composition and doping of pulsed laser deposited films |
JP3623001B2 (ja) | 1994-02-25 | 2005-02-23 | 住友電気工業株式会社 | 単結晶性薄膜の形成方法 |
US6045671A (en) * | 1994-10-18 | 2000-04-04 | Symyx Technologies, Inc. | Systems and methods for the combinatorial synthesis of novel materials |
US5906310A (en) | 1994-11-10 | 1999-05-25 | Vlt Corporation | Packaging electrical circuits |
KR0148598B1 (ko) | 1994-11-21 | 1998-10-15 | 정선종 | 두꺼운 초전도채널층을 구비한 고온초전도 전계효과 트랜지스터의 제조방법 |
US6228453B1 (en) | 1995-06-07 | 2001-05-08 | Lanxide Technology Company, Lp | Composite materials comprising two jonal functions and methods for making the same |
US5745334A (en) * | 1996-03-25 | 1998-04-28 | International Business Machines Corporation | Capacitor formed within printed circuit board |
US5745335A (en) * | 1996-06-27 | 1998-04-28 | Gennum Corporation | Multi-layer film capacitor structures and method |
JPH1027987A (ja) | 1996-07-10 | 1998-01-27 | Hitachi Ltd | 低emi回路基板及び低emiケーブルコネクタ |
DE69726804T2 (de) | 1996-08-08 | 2004-10-07 | Sumitomo Electric Industries | Verfahren zur Herstellung einer mehrschichtigen Struktur; umfassend eine dünne oxidische supraleitende Schicht |
JP2867985B2 (ja) * | 1996-12-20 | 1999-03-10 | 日本電気株式会社 | プリント回路基板 |
US6603646B2 (en) * | 1997-04-08 | 2003-08-05 | X2Y Attenuators, Llc | Multi-functional energy conditioner |
US6373673B1 (en) * | 1997-04-08 | 2002-04-16 | X2Y Attenuators, Llc | Multi-functional energy conditioner |
US6018448A (en) * | 1997-04-08 | 2000-01-25 | X2Y Attenuators, L.L.C. | Paired multi-layered dielectric independent passive component architecture resulting in differential and common mode filtering with surge protection in one integrated package |
JP3687041B2 (ja) * | 1997-04-16 | 2005-08-24 | 大日本印刷株式会社 | 配線基板、配線基板の製造方法、および半導体パッケージ |
US20040109298A1 (en) * | 1998-05-04 | 2004-06-10 | Hartman William F. | Dielectric material including particulate filler |
US6156654A (en) | 1998-12-07 | 2000-12-05 | Chartered Semiconductor Manufacturing Ltd. | Pulsed laser salicidation for fabrication of ultra-thin silicides in sub-quarter micron devices |
US6370012B1 (en) * | 2000-08-30 | 2002-04-09 | International Business Machines Corporation | Capacitor laminate for use in printed circuit board and as an interconnector |
JP4332634B2 (ja) * | 2000-10-06 | 2009-09-16 | Tdk株式会社 | 積層型電子部品 |
JP3784341B2 (ja) * | 2001-04-03 | 2006-06-07 | 独立行政法人産業技術総合研究所 | 回路基板とその作製方法 |
US6891258B1 (en) * | 2002-12-06 | 2005-05-10 | Xilinx, Inc. | Interposer providing low-inductance decoupling capacitance for a packaged integrated circuit |
US7209368B2 (en) * | 2003-01-30 | 2007-04-24 | Endicott Interconnect Technologies, Inc. | Circuitized substrate with signal wire shielding, electrical assembly utilizing same and method of making |
US20070218333A1 (en) | 2004-04-12 | 2007-09-20 | Kazuya Iwamoto | Metal-Oxide Containing Substrate and Manufacturing Method Therefor |
US6903918B1 (en) * | 2004-04-20 | 2005-06-07 | Texas Instruments Incorporated | Shielded planar capacitor |
US7867554B2 (en) | 2005-01-06 | 2011-01-11 | United Technologies Corporation | Boron nitride coated fibers and composite articles containing same |
JP4537877B2 (ja) * | 2005-03-31 | 2010-09-08 | 株式会社東芝 | セラミックス配線基板とそれを用いた半導体装置 |
DE102005028498B4 (de) * | 2005-06-20 | 2015-01-22 | Epcos Ag | Elektrisches Vielschichtbauelement |
US7626216B2 (en) * | 2005-10-21 | 2009-12-01 | Mckinzie Iii William E | Systems and methods for electromagnetic noise suppression using hybrid electromagnetic bandgap structures |
TWI284407B (en) * | 2005-11-03 | 2007-07-21 | Cyntec Co Ltd | Package device with electromagnetic interference shield |
US7510742B2 (en) | 2005-11-18 | 2009-03-31 | United Technologies Corporation | Multilayered boron nitride/silicon nitride fiber coatings |
KR100675012B1 (ko) * | 2006-02-06 | 2007-01-29 | 삼성전자주식회사 | 강화된 구리 도금막을 포함하는 pcb 및 그 제조 방법 |
WO2008112658A1 (en) * | 2007-03-10 | 2008-09-18 | Sanmina-Sci Corporation | Embedded capacitive stack |
US20090017309A1 (en) * | 2007-07-09 | 2009-01-15 | E. I. Du Pont De Nemours And Company | Compositions and methods for creating electronic circuitry |
US7842774B2 (en) | 2007-07-24 | 2010-11-30 | United Technologies Corporation | Preceramic silazane polymer for ceramic materials |
US7701040B2 (en) * | 2007-09-24 | 2010-04-20 | Stats Chippac, Ltd. | Semiconductor package and method of reducing electromagnetic interference between devices |
TWI341152B (en) * | 2007-10-26 | 2011-04-21 | Ind Tech Res Inst | Conductive connection structure of printed circuit board (pcb) |
KR100937664B1 (ko) * | 2007-12-26 | 2010-01-19 | 주식회사 동부하이텍 | 반도체 소자의 패드 및 그의 제조 방법 |
FR2939430B1 (fr) | 2008-12-04 | 2011-01-07 | Snecma Propulsion Solide | Procede pour le lissage de la surface d'une piece en materiau cmc |
US7786839B2 (en) * | 2008-12-28 | 2010-08-31 | Pratt & Whitney Rocketdyne, Inc. | Passive electrical components with inorganic dielectric coating layer |
JP5868575B2 (ja) * | 2010-04-15 | 2016-02-24 | 浜松ホトニクス株式会社 | 接続基板 |
UA99418C2 (en) * | 2011-10-26 | 2012-08-10 | Владимир Владимирович Князев | Multilayered lightning protection material |
-
2008
- 2008-09-18 US US12/212,975 patent/US8242375B2/en active Active
-
2009
- 2009-08-13 CN CN200980136660.XA patent/CN102160174B/zh not_active Expired - Fee Related
- 2009-08-13 WO PCT/US2009/053671 patent/WO2010033325A1/en active Application Filing
- 2009-08-13 JP JP2011527857A patent/JP5557294B2/ja not_active Expired - Fee Related
- 2009-08-13 EP EP09791469A patent/EP2338174A1/en not_active Ceased
-
2012
- 2012-06-01 US US13/486,490 patent/US8981232B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100065308A1 (en) | 2010-03-18 |
WO2010033325A1 (en) | 2010-03-25 |
EP2338174A1 (en) | 2011-06-29 |
US8242375B2 (en) | 2012-08-14 |
US8981232B2 (en) | 2015-03-17 |
CN102160174A (zh) | 2011-08-17 |
CN102160174B (zh) | 2013-10-23 |
US20120236464A1 (en) | 2012-09-20 |
JP2012503333A (ja) | 2012-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10535581B2 (en) | Module for heat generating electronic component | |
JP5557294B2 (ja) | 伝導性エミッション保護 | |
US10325895B2 (en) | Semiconductor module | |
US9439279B2 (en) | Ceramic circuit board and electronic device | |
KR20200005665A (ko) | 금속-세라믹 기판의 레이저 어블레이션 방법; 해당 기판 | |
US10568214B2 (en) | Method for producing multi-level metalization on a ceramic substrate | |
US11395405B2 (en) | Wiring substrate and electronic device | |
TWM595383U (zh) | 散熱型電子裝置 | |
JP2014168044A (ja) | ヒートシンク付パワーモジュール用基板及びその製造方法 | |
US11081421B2 (en) | IGBT module with heat dissipation structure having ceramic layers corresponding in position and in area to chips | |
KR102122210B1 (ko) | 방열 기판, 그 제조 방법, 그리고 이를 포함하는 반도체 패키지 | |
JP2007123798A (ja) | 配線基板および電子装置 | |
US9468091B2 (en) | Stress-reduced circuit board and method for forming the same | |
US20190056186A1 (en) | Cooling device and method for producing the cooling device | |
JP2008147757A (ja) | 高周波信号伝送基板 | |
JP2004128510A (ja) | 向上された絶縁強度を有するパワー半導体モジュール | |
US11234324B1 (en) | Circuit board structure and manufacturing method thereof | |
JP2001135789A (ja) | 積層セラミック基板及びこれを用いたパワーモジュール用基板 | |
JP7341756B2 (ja) | デバイス搭載用基板 | |
US20210305062A1 (en) | Method for forming a semiconductor substrate arrangement | |
KR102621334B1 (ko) | 마스킹 공정을 단순화한 세라믹 방열기판 제조방법 | |
JP2010186962A (ja) | 半導体パッケージおよびその作製方法 | |
JP2007273604A (ja) | 半導体装置 | |
JP2002198456A (ja) | セラミックス回路基板およびパワーモジュール | |
JP2002314036A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120730 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130502 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131008 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140107 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140206 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140507 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140529 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5557294 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R157 | Certificate of patent or utility model (correction) |
Free format text: JAPANESE INTERMEDIATE CODE: R157 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |