JP7213869B2 - 電子機器 - Google Patents
電子機器 Download PDFInfo
- Publication number
- JP7213869B2 JP7213869B2 JP2020515308A JP2020515308A JP7213869B2 JP 7213869 B2 JP7213869 B2 JP 7213869B2 JP 2020515308 A JP2020515308 A JP 2020515308A JP 2020515308 A JP2020515308 A JP 2020515308A JP 7213869 B2 JP7213869 B2 JP 7213869B2
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- component
- display panel
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- movable
- transistor
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- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
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- 238000010586 diagram Methods 0.000 description 9
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
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- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H04N5/00—Details of television systems
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- H05K5/0017—Casings, cabinets or drawers for electric apparatus with operator interface units
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Description
本実施の形態では、可撓性を有する表示パネルを備えた電子機器について、図1乃至図9を用いて説明する。
本実施の形態では、先の実施の形態で例示した表示パネルの一例について説明を行う。
図10(A)に、表示パネル700の上面図を示す。表示パネル700は、シール材712により貼りあわされた第1の基板701と第2の基板705を有する。また第1の基板701、第2の基板705、及びシール材712で封止される領域において、第1の基板701上に画素部702、ソースドライバ704、及びゲートドライバ706が設けられる。また画素部702には、複数の表示素子が設けられる。
以下では、表示素子として液晶素子及びEL素子を用いる構成について、図11乃至図13を用いて説明する。なお、図11乃至図13は、それぞれ図10(A)に示す一点鎖線Q-Rにおける断面図である。図11及び図12は、表示素子として液晶素子を用いた構成であり、図13は、EL素子を用いた構成である。
図11乃至図13に示す表示パネル700は、引き回し配線部711と、画素部702と、ソースドライバ704と、端子部708と、を有する。引き回し配線部711は、信号線710を有する。画素部702は、トランジスタ750及び容量素子790を有する。ソースドライバ704は、トランジスタ752を有する。図12では、容量素子790が無い場合を示している。
図11に示す表示パネル700は、液晶素子775を有する。液晶素子775は、導電層772、導電層774、及びこれらの間に液晶層776を有する。導電層774は、第2の基板705側に設けられ、共通電極としての機能を有する。また、導電層772は、トランジスタ750が有するソース電極又はドレイン電極と電気的に接続される。導電層772は、平坦化絶縁膜770上に形成され、画素電極として機能する。
図13に示す表示パネル700は、発光素子782を有する。発光素子782は、導電層772、EL層786、及び導電膜788を有する。EL層786は、有機化合物、又は量子ドットなどの無機化合物を有する。
また、図11乃至図13に示す表示パネル700に入力装置を設けてもよい。当該入力装置としては、例えば、タッチセンサ等が挙げられる。
本実施の形態では、表示パネルについて、図14を用いて説明を行う。
以下では、画素に表示される階調を補正するためのメモリを備える画素回路と、これを有する表示パネルについて説明する。
図15(A)に、画素回路400の回路図を示す。画素回路400は、トランジスタTr1、トランジスタTr2、容量C1、及び回路401を有する。また画素回路400には、配線S1、配線S2、配線G1、及び配線G2が接続される。
続いて、図15(B)を用いて、画素回路400の動作方法の一例を説明する。図15(B)は、画素回路400の動作に係るタイミングチャートである。なおここでは説明を容易にするため、配線抵抗などの各種抵抗や、トランジスタや配線などの寄生容量、及びトランジスタのしきい値電圧などの影響は考慮しない。
期間T1では、配線G1と配線G2の両方に、トランジスタをオン状態にする電位を与える。また、配線S1には固定電位である電位Vrefを供給し、配線S2には第1データ電位Vwを供給する。
続いて期間T2では、配線G1にはトランジスタTr1をオン状態とする電位を与え、配線G2にはトランジスタTr2をオフ状態とする電位を与える。また、配線S1には第2データ電位Vdataを供給する。配線S2には所定の定電位を与える、又はフローティングとしてもよい。
〔液晶素子を用いた例〕
図15(C)に示す画素回路400LCは、回路401LCを有する。回路401LCは、液晶素子LCと、容量C2とを有する。
図15(D)に示す画素回路400ELは、回路401ELを有する。回路401ELは、発光素子EL、トランジスタTr3、及び容量C2を有する。
本実施の形態では、本発明の一態様の電子機器について、図面を参照して説明する。
本実施の形態では、上記実施の形態で述べたOSトランジスタに用いることができるCAC(Cloud-Aligned Composite)-OSの構成について説明する。
Claims (8)
- 表示パネル、第1の部品、可動モジュール、及び筐体を備える電子機器であって、
前記筐体は、第1の可動部、第2の部品、及び第3の部品を有し、
前記第3の部品には、前記第1の部品を収納する第1の空間が設けられ、
前記表示パネルは、可撓性を有する表示部を有し、
前記表示部は、第1の領域、第2の領域、及び第3の領域を有し、
前記第1の領域は、前記第2の部品に固定され、
前記第2の領域は、前記第1の空間に収納される前記第1の部品に固定され、
前記第1の可動部は、前記第2の部品と、前記第3の部品とを接続し、
前記可動モジュールは、第4の部品、第5の部品、第6の部品、第7の部品、第8の部品、第2の可動部、第3の可動部、第4の可動部、及び第5の可動部を有し、
前記第4の部品は、前記第1の可動部と前記第5の部品とに接続され、
前記第5の部品は、前記第6の部品と接続され、
前記第6の部品は、前記第7の部品と接続され、
前記第7の部品は、前記第8の部品と接続され、
前記第2の可動部は、前記第4の部品と、前記第5の部品とで形成する第2の角度を制御し、
前記第3の可動部は、前記第5の部品と、前記第6の部品とで形成する第3の角度を制御し、
前記第4の可動部は、前記第6の部品と、前記第7の部品とで形成する第4の角度を制御し、
前記第5の可動部は、前記第7の部品と、前記第8の部品とで形成する第5の角度を制御し、
前記第6の部品には、前記第7の部品を収納する第2の空間が設けられ、
前記第7の部品には、前記第8の部品を収納する第3の空間が設けられ、
前記第8の部品は、前記第3の部品に固定され、且つ、前記第1の空間が設けられる面とは異なる面に固定され、
前記可動モジュールは、前記第1の可動部が前記第2の部品と前記第3の部品とで形成する第1の角度を保持する機能を有し、
前記第1の領域と、前記第2の領域との間に位置する前記第3の領域は、前記第1の角度に応じて曲面を形成する機能を有し、
前記第1の部品は、前記第1の角度に応じて前記第1の空間の中をスライド移動する電子機器。 - 請求項1において、
前記第3の部品は、前記第1の空間の方向に向けて突出した形状の構造物を有し、
前記第1の部品は、切欠き領域を有し、
前記切欠き領域は、前記突出した形状の構造物が前記切欠き領域の中に位置するように配置され、
前記切欠き領域の大きさが、前記第1の空間の中でスライド移動する前記第1の部品の可動可能な範囲となる電子機器。 - 請求項1において、
前記筐体は、さらに第9の部品を有し、
前記表示パネルは、電子部品が実装される第4の領域を有し、
前記第2の部品は、前記第2の部品と前記第9の部品とで形成される第5の空間に前記第4の領域を収納するための開口部を有し、
前記開口部は、第1の幅の部分と、第2の幅の部分とを有し、
前記第1の幅は前記表示部の厚さよりも大きく、前記第2の幅は前記電子部品が実装された部分の厚さよりも大きい電子機器。 - 請求項1において、
前記第6の部品の前記第2の空間に、前記第7の部品が収納されず、且つ、前記第7の部品の前記第3の空間に、前記第8の部品が収納されない場合、
前記第5の部品、前記第6の部品、及び前記第7の部品によって第4の空間が形成され、
前記表示パネルの一部が、前記第4の空間内に位置する電子機器。 - 請求項1において、
前記第6の部品の前記第2の空間に前記第7の部品が収納され、且つ、前記第7の部品の前記第3の空間に前記第8の部品が収納される場合、
前記表示パネルが、前記第4の部品、前記第5の部品、及び前記第6の部品のそれぞれの一部と平行に位置する、又は前記第4の部品、前記第5の部品、及び前記第6の部品のそれぞれの一部と接する電子機器。 - 請求項1において、
前記表示パネルは、トランジスタを有し、
前記トランジスタは、半導体層に多結晶シリコンを有する電子機器。 - 請求項1において、
前記表示パネルは、トランジスタを有し、
前記トランジスタは、半導体層に金属酸化物を有する電子機器。 - 請求項6又は7において、
前記トランジスタは、バックゲートを有する電子機器。
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US11570914B2 (en) | 2023-01-31 |
JPWO2019207400A1 (ja) | 2021-05-13 |
CN112005291A (zh) | 2020-11-27 |
JP2023055743A (ja) | 2023-04-18 |
US20210168951A1 (en) | 2021-06-03 |
CN112005291B (zh) | 2023-03-21 |
US20230156938A1 (en) | 2023-05-18 |
WO2019207400A1 (ja) | 2019-10-31 |
KR20210005049A (ko) | 2021-01-13 |
CN116403481A (zh) | 2023-07-07 |
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