JP7199758B2 - バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム - Google Patents
バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム Download PDFInfo
- Publication number
- JP7199758B2 JP7199758B2 JP2021525820A JP2021525820A JP7199758B2 JP 7199758 B2 JP7199758 B2 JP 7199758B2 JP 2021525820 A JP2021525820 A JP 2021525820A JP 2021525820 A JP2021525820 A JP 2021525820A JP 7199758 B2 JP7199758 B2 JP 7199758B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- top electrode
- bottom electrode
- piezoelectric
- resonance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 238000004891 communication Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 49
- 238000005530 etching Methods 0.000 claims description 41
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 239000007772 electrode material Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 314
- 230000008569 process Effects 0.000 description 48
- 239000000463 material Substances 0.000 description 33
- 239000010408 film Substances 0.000 description 22
- 230000003071 parasitic effect Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 239000012528 membrane Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 238000007667 floating Methods 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 239000010948 rhodium Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- NCMAYWHYXSWFGB-UHFFFAOYSA-N [Si].[N+][O-] Chemical compound [Si].[N+][O-] NCMAYWHYXSWFGB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/462—Microelectro-mechanical filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910272274.9A CN111786648A (zh) | 2019-04-04 | 2019-04-04 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
CN201910272274.9 | 2019-04-04 | ||
PCT/CN2019/105089 WO2020199506A1 (zh) | 2019-04-04 | 2019-09-10 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022507320A JP2022507320A (ja) | 2022-01-18 |
JP7199758B2 true JP7199758B2 (ja) | 2023-01-06 |
Family
ID=72664457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021525820A Active JP7199758B2 (ja) | 2019-04-04 | 2019-09-10 | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7199758B2 (zh) |
CN (1) | CN111786648A (zh) |
WO (1) | WO2020199506A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114124022A (zh) * | 2021-11-30 | 2022-03-01 | 中国科学院上海微系统与信息技术研究所 | 一种增强散热的悬空谐振器及制备方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007006501A (ja) | 2005-06-23 | 2007-01-11 | Avago Technologies Wireless Ip (Singapore) Pte Ltd | 交互配列の縁部構造を利用した音響共振器の性能向上 |
JP2007295310A (ja) | 2006-04-25 | 2007-11-08 | Matsushita Electric Works Ltd | Baw共振器 |
WO2010095640A1 (ja) | 2009-02-20 | 2010-08-26 | 宇部興産株式会社 | 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ |
JP2013138425A (ja) | 2011-12-27 | 2013-07-11 | Avago Technologies Wireless Ip (Singapore) Pte Ltd | ブリッジを備えるソリッドマウントバルク音響波共振器構造 |
JP2016194630A (ja) | 2015-04-01 | 2016-11-17 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
JP2017147719A (ja) | 2016-02-17 | 2017-08-24 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器及びその製造方法 |
US20180152168A1 (en) | 2016-11-30 | 2018-05-31 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
US20180205360A1 (en) | 2017-01-17 | 2018-07-19 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
JP2018537672A (ja) | 2015-11-20 | 2018-12-20 | コーボ ユーエス,インコーポレイティド | せん断モード応答を高めるために活性領域の機械的締め付けを少なくした音響共振器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4719623B2 (ja) * | 2006-05-31 | 2011-07-06 | 太陽誘電株式会社 | フィルタ |
JP5319491B2 (ja) * | 2009-10-22 | 2013-10-16 | 太陽誘電株式会社 | 圧電薄膜共振子 |
CN102223142B (zh) * | 2011-08-13 | 2019-09-10 | 张�浩 | 声波谐振器 |
KR101922878B1 (ko) * | 2016-07-14 | 2018-11-29 | 삼성전기 주식회사 | 탄성파 공진기 장치 |
DE102017117870B3 (de) * | 2017-08-07 | 2018-12-27 | RF360 Europe GmbH | BAW-Resonator mit reduzierten Störmoden und erhöhtem Gütefaktor |
-
2019
- 2019-04-04 CN CN201910272274.9A patent/CN111786648A/zh active Pending
- 2019-09-10 JP JP2021525820A patent/JP7199758B2/ja active Active
- 2019-09-10 WO PCT/CN2019/105089 patent/WO2020199506A1/zh active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007006501A (ja) | 2005-06-23 | 2007-01-11 | Avago Technologies Wireless Ip (Singapore) Pte Ltd | 交互配列の縁部構造を利用した音響共振器の性能向上 |
JP2007295310A (ja) | 2006-04-25 | 2007-11-08 | Matsushita Electric Works Ltd | Baw共振器 |
WO2010095640A1 (ja) | 2009-02-20 | 2010-08-26 | 宇部興産株式会社 | 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ |
JP2013138425A (ja) | 2011-12-27 | 2013-07-11 | Avago Technologies Wireless Ip (Singapore) Pte Ltd | ブリッジを備えるソリッドマウントバルク音響波共振器構造 |
JP2016194630A (ja) | 2015-04-01 | 2016-11-17 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
JP2018537672A (ja) | 2015-11-20 | 2018-12-20 | コーボ ユーエス,インコーポレイティド | せん断モード応答を高めるために活性領域の機械的締め付けを少なくした音響共振器 |
JP2017147719A (ja) | 2016-02-17 | 2017-08-24 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器及びその製造方法 |
US20180152168A1 (en) | 2016-11-30 | 2018-05-31 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
US20180205360A1 (en) | 2017-01-17 | 2018-07-19 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
Also Published As
Publication number | Publication date |
---|---|
WO2020199506A1 (zh) | 2020-10-08 |
JP2022507320A (ja) | 2022-01-18 |
CN111786648A (zh) | 2020-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7138988B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
JP7194476B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
JP7339694B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
US11005448B2 (en) | Film bulk acoustic wave resonators and fabrication methods thereof | |
JP7130841B2 (ja) | 薄膜バルク音響波共振器及びその製造方法 | |
JP7194473B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
CN112039466B (zh) | 一种薄膜体声波谐振器及其制造方法 | |
CN112039467B (zh) | 一种薄膜体声波谐振器及其制造方法 | |
CN112039469B (zh) | 一种薄膜体声波谐振器的制造方法 | |
CN114070223A (zh) | 薄膜体声波谐振器及其制造方法 | |
JP7194475B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
JP7194474B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
CN112311353A (zh) | 一种牢固安置型体声波谐振器及其制造方法 | |
JP7199758B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
JP7199757B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
US12009803B2 (en) | Bulk acoustic wave resonator, filter and radio frequency communication system | |
JP7251837B2 (ja) | 薄膜バルク音響波共振器およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210512 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220506 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220816 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221213 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221214 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7199758 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |