JP7196265B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7196265B2
JP7196265B2 JP2021177652A JP2021177652A JP7196265B2 JP 7196265 B2 JP7196265 B2 JP 7196265B2 JP 2021177652 A JP2021177652 A JP 2021177652A JP 2021177652 A JP2021177652 A JP 2021177652A JP 7196265 B2 JP7196265 B2 JP 7196265B2
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region
type
silicon carbide
electrode
gate
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Japanese (ja)
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JP2022009745A5 (enExample
JP2022009745A (ja
Inventor
宏平 森塚
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority claimed from JP2020002709A external-priority patent/JP2020074426A/ja
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2021177652A priority Critical patent/JP7196265B2/ja
Publication of JP2022009745A publication Critical patent/JP2022009745A/ja
Publication of JP2022009745A5 publication Critical patent/JP2022009745A5/ja
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JP2021177652A 2020-01-10 2021-10-29 半導体装置 Active JP7196265B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021177652A JP7196265B2 (ja) 2020-01-10 2021-10-29 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020002709A JP2020074426A (ja) 2020-01-10 2020-01-10 半導体装置
JP2021177652A JP7196265B2 (ja) 2020-01-10 2021-10-29 半導体装置

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JP2020002709A Division JP2020074426A (ja) 2020-01-10 2020-01-10 半導体装置

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JP2022009745A JP2022009745A (ja) 2022-01-14
JP2022009745A5 JP2022009745A5 (enExample) 2022-05-17
JP7196265B2 true JP7196265B2 (ja) 2022-12-26

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JP2021177652A Active JP7196265B2 (ja) 2020-01-10 2021-10-29 半導体装置

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024031704A (ja) 2022-08-26 2024-03-07 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
CN117497600B (zh) * 2023-12-28 2024-05-07 深圳天狼芯半导体有限公司 超结碳化硅晶体管的结构、制造方法及电子设备
CN119584607B (zh) * 2025-02-07 2025-05-30 深圳天狼芯半导体有限公司 改善反向恢复特性的mosfet及其制备方法、芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002538602A (ja) 1999-02-26 2002-11-12 フェアチャイルド セミコンダクター コーポレイション モノリシック集積されたトレンチｍｏｓｆｅｔ及びショットキー・ダイオード
JP2006066770A (ja) 2004-08-30 2006-03-09 Nissan Motor Co Ltd 半導体装置
JP2012004197A (ja) 2010-06-15 2012-01-05 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP2014086431A (ja) 2012-10-19 2014-05-12 Nissan Motor Co Ltd 半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
JP3272242B2 (ja) * 1995-06-09 2002-04-08 三洋電機株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002538602A (ja) 1999-02-26 2002-11-12 フェアチャイルド セミコンダクター コーポレイション モノリシック集積されたトレンチｍｏｓｆｅｔ及びショットキー・ダイオード
JP2006066770A (ja) 2004-08-30 2006-03-09 Nissan Motor Co Ltd 半導体装置
JP2012004197A (ja) 2010-06-15 2012-01-05 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP2014086431A (ja) 2012-10-19 2014-05-12 Nissan Motor Co Ltd 半導体装置及びその製造方法

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