JP7194100B2 - 電極、加速器カラム及びそれらを含むイオン注入装置 - Google Patents

電極、加速器カラム及びそれらを含むイオン注入装置 Download PDF

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JP7194100B2
JP7194100B2 JP2019503740A JP2019503740A JP7194100B2 JP 7194100 B2 JP7194100 B2 JP 7194100B2 JP 2019503740 A JP2019503740 A JP 2019503740A JP 2019503740 A JP2019503740 A JP 2019503740A JP 7194100 B2 JP7194100 B2 JP 7194100B2
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frame
insert
electrode
ion beam
outer portion
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Japanese (ja)
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JP2019523531A (ja
JP2019523531A5 (enExample
Inventor
ルポリ クリストファー
エイ ダージン シェリ
マックギリカディー ダニエル
ジェイ セリオールト ビクター
ベッカー クラウス
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00—Direct voltage accelerators; Accelerators using single pulses
    • H05H5/06—Multistage accelerators
    • H05H5/063—Tandems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/06—Two-beam arrangements; Multi-beam arrangements storage rings; Electron rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Semiconductor Memories (AREA)
JP2019503740A 2016-08-04 2017-07-21 電極、加速器カラム及びそれらを含むイオン注入装置 Active JP7194100B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/228,158 US9807864B1 (en) 2016-08-04 2016-08-04 Electrode, accelerator column and ion implantation apparatus including same
US15/228,158 2016-08-04
PCT/US2017/043277 WO2018026543A1 (en) 2016-08-04 2017-07-21 Electrode, accelerator column and ion implantation apparatus including same

Publications (3)

Publication Number Publication Date
JP2019523531A JP2019523531A (ja) 2019-08-22
JP2019523531A5 JP2019523531A5 (enExample) 2020-05-28
JP7194100B2 true JP7194100B2 (ja) 2022-12-21

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ID=60142632

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JP2019503740A Active JP7194100B2 (ja) 2016-08-04 2017-07-21 電極、加速器カラム及びそれらを含むイオン注入装置

Country Status (6)

Country Link
US (1) US9807864B1 (enExample)
JP (1) JP7194100B2 (enExample)
KR (1) KR102448490B1 (enExample)
CN (1) CN109478487B (enExample)
TW (1) TWI749021B (enExample)
WO (1) WO2018026543A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7321536B2 (ja) * 2018-04-30 2023-08-07 ニュートロン・セラピューティクス・インコーポレイテッド 小型電動機駆動絶縁静電粒子加速器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003178688A (ja) 2001-12-12 2003-06-27 Shin Etsu Handotai Co Ltd イオン注入装置の引出電極系およびイオン注入装置
US20160064186A1 (en) 2014-08-26 2016-03-03 Varian Semiconductor Equipment Associates, Inc. Bias electrodes for tandem accelerator
CN205726638U (zh) 2016-06-07 2016-11-23 中国工程物理研究院核物理与化学研究所 一种强流四极透镜离子加速管

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328618A (en) 1965-09-13 1967-06-27 High Voltage Engineering Corp High-voltage acceleration tube with inserts for the electrodes
US5095208A (en) * 1988-06-24 1992-03-10 Hitachi, Ltd. Charged particle generating device and focusing lens therefor
JPH03102800A (ja) * 1989-09-18 1991-04-30 Shimadzu Corp 高周波多重極線型加速器
JPH04294043A (ja) * 1991-03-22 1992-10-19 Matsushita Electron Corp イオン注入機のチャージアップ制御装置
JPH088097A (ja) * 1994-06-20 1996-01-12 Nissin High Voltage Co Ltd 静電型イオン加速装置
JPH10270196A (ja) * 1997-03-25 1998-10-09 Nissin High Voltage Co Ltd イオン加速器用加速管
US20060043316A1 (en) * 2003-06-10 2006-03-02 Varian Semiconductor Equipment Associates, Inc. Ion implanter having enhanced low energy ion beam transport
KR100538813B1 (ko) 2004-07-31 2005-12-23 주식회사 하이닉스반도체 트랜지스터 파라미터의 균일도 확보를 위한 이온주입 장치및 그를 이용한 이온주입 방법
US20070221862A1 (en) * 2006-03-22 2007-09-27 Wayne State University Coupled Electrostatic Ion and Electron Traps for Electron Capture Dissociation - Tandem Mass Spectrometry
GB0703044D0 (en) * 2007-02-16 2007-03-28 Nordiko Technical Services Ltd Apparatus
CN101296555A (zh) * 2007-04-25 2008-10-29 和舰科技(苏州)有限公司 一种离子加速装置
US9053895B2 (en) * 2011-11-30 2015-06-09 Fei Company System for attachment of an electrode into a plasma source
KR102523497B1 (ko) * 2013-11-14 2023-04-21 에이에스엠엘 네델란즈 비.브이. 멀티-전극 전자 광학

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003178688A (ja) 2001-12-12 2003-06-27 Shin Etsu Handotai Co Ltd イオン注入装置の引出電極系およびイオン注入装置
US20160064186A1 (en) 2014-08-26 2016-03-03 Varian Semiconductor Equipment Associates, Inc. Bias electrodes for tandem accelerator
CN205726638U (zh) 2016-06-07 2016-11-23 中国工程物理研究院核物理与化学研究所 一种强流四极透镜离子加速管

Also Published As

Publication number Publication date
CN109478487B (zh) 2021-02-19
JP2019523531A (ja) 2019-08-22
TWI749021B (zh) 2021-12-11
CN109478487A (zh) 2019-03-15
WO2018026543A1 (en) 2018-02-08
KR102448490B1 (ko) 2022-09-28
TW201816828A (zh) 2018-05-01
US9807864B1 (en) 2017-10-31
KR20190026938A (ko) 2019-03-13

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