CN109478487B - 电极、加速器柱以及包含上述的离子植入装置 - Google Patents

电极、加速器柱以及包含上述的离子植入装置 Download PDF

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Publication number
CN109478487B
CN109478487B CN201780045501.3A CN201780045501A CN109478487B CN 109478487 B CN109478487 B CN 109478487B CN 201780045501 A CN201780045501 A CN 201780045501A CN 109478487 B CN109478487 B CN 109478487B
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China
Prior art keywords
frame
insert
electrode
ion beam
electrodes
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Application number
CN201780045501.3A
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English (en)
Chinese (zh)
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CN109478487A (zh
Inventor
克里斯多夫·鲁波利
雪莉·A·德基
丹尼尔·梅吉立克帝
维克多·J·席瑞奥特
可劳斯·贝克
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN109478487A publication Critical patent/CN109478487A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00—Direct voltage accelerators; Accelerators using single pulses
    • H05H5/06—Multistage accelerators
    • H05H5/063—Tandems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/06—Two-beam arrangements; Multi-beam arrangements storage rings; Electron rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Semiconductor Memories (AREA)
CN201780045501.3A 2016-08-04 2017-07-21 电极、加速器柱以及包含上述的离子植入装置 Active CN109478487B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/228,158 US9807864B1 (en) 2016-08-04 2016-08-04 Electrode, accelerator column and ion implantation apparatus including same
US15/228,158 2016-08-04
PCT/US2017/043277 WO2018026543A1 (en) 2016-08-04 2017-07-21 Electrode, accelerator column and ion implantation apparatus including same

Publications (2)

Publication Number Publication Date
CN109478487A CN109478487A (zh) 2019-03-15
CN109478487B true CN109478487B (zh) 2021-02-19

Family

ID=60142632

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780045501.3A Active CN109478487B (zh) 2016-08-04 2017-07-21 电极、加速器柱以及包含上述的离子植入装置

Country Status (6)

Country Link
US (1) US9807864B1 (enExample)
JP (1) JP7194100B2 (enExample)
KR (1) KR102448490B1 (enExample)
CN (1) CN109478487B (enExample)
TW (1) TWI749021B (enExample)
WO (1) WO2018026543A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7321536B2 (ja) * 2018-04-30 2023-08-07 ニュートロン・セラピューティクス・インコーポレイテッド 小型電動機駆動絶縁静電粒子加速器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095208A (en) * 1988-06-24 1992-03-10 Hitachi, Ltd. Charged particle generating device and focusing lens therefor
CN1728338A (zh) * 2004-07-31 2006-02-01 海力士半导体有限公司 离子植入设备及利用该设备植入离子的方法
CN101296555A (zh) * 2007-04-25 2008-10-29 和舰科技(苏州)有限公司 一种离子加速装置
CN103140010A (zh) * 2011-11-30 2013-06-05 Fei公司 用于将电极附连到感应耦合等离子体源的系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328618A (en) 1965-09-13 1967-06-27 High Voltage Engineering Corp High-voltage acceleration tube with inserts for the electrodes
JPH03102800A (ja) * 1989-09-18 1991-04-30 Shimadzu Corp 高周波多重極線型加速器
JPH04294043A (ja) * 1991-03-22 1992-10-19 Matsushita Electron Corp イオン注入機のチャージアップ制御装置
JPH088097A (ja) * 1994-06-20 1996-01-12 Nissin High Voltage Co Ltd 静電型イオン加速装置
JPH10270196A (ja) * 1997-03-25 1998-10-09 Nissin High Voltage Co Ltd イオン加速器用加速管
JP3858682B2 (ja) * 2001-12-12 2006-12-20 信越半導体株式会社 イオン注入装置の引出電極系およびイオン注入装置
US20060043316A1 (en) * 2003-06-10 2006-03-02 Varian Semiconductor Equipment Associates, Inc. Ion implanter having enhanced low energy ion beam transport
US20070221862A1 (en) * 2006-03-22 2007-09-27 Wayne State University Coupled Electrostatic Ion and Electron Traps for Electron Capture Dissociation - Tandem Mass Spectrometry
GB0703044D0 (en) * 2007-02-16 2007-03-28 Nordiko Technical Services Ltd Apparatus
KR102523497B1 (ko) * 2013-11-14 2023-04-21 에이에스엠엘 네델란즈 비.브이. 멀티-전극 전자 광학
US9281165B1 (en) * 2014-08-26 2016-03-08 Varian Semiconductor Equipment Associates, Inc. Bias electrodes for tandem accelerator
CN205726638U (zh) * 2016-06-07 2016-11-23 中国工程物理研究院核物理与化学研究所 一种强流四极透镜离子加速管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095208A (en) * 1988-06-24 1992-03-10 Hitachi, Ltd. Charged particle generating device and focusing lens therefor
CN1728338A (zh) * 2004-07-31 2006-02-01 海力士半导体有限公司 离子植入设备及利用该设备植入离子的方法
CN101296555A (zh) * 2007-04-25 2008-10-29 和舰科技(苏州)有限公司 一种离子加速装置
CN103140010A (zh) * 2011-11-30 2013-06-05 Fei公司 用于将电极附连到感应耦合等离子体源的系统

Also Published As

Publication number Publication date
JP2019523531A (ja) 2019-08-22
TWI749021B (zh) 2021-12-11
CN109478487A (zh) 2019-03-15
WO2018026543A1 (en) 2018-02-08
KR102448490B1 (ko) 2022-09-28
TW201816828A (zh) 2018-05-01
US9807864B1 (en) 2017-10-31
JP7194100B2 (ja) 2022-12-21
KR20190026938A (ko) 2019-03-13

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