KR102448490B1 - 전극, 가속기 컬럼 및 이를 포함하는 이온 주입 장치 - Google Patents

전극, 가속기 컬럼 및 이를 포함하는 이온 주입 장치 Download PDF

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Publication number
KR102448490B1
KR102448490B1 KR1020197005409A KR20197005409A KR102448490B1 KR 102448490 B1 KR102448490 B1 KR 102448490B1 KR 1020197005409 A KR1020197005409 A KR 1020197005409A KR 20197005409 A KR20197005409 A KR 20197005409A KR 102448490 B1 KR102448490 B1 KR 102448490B1
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South Korea
Prior art keywords
insert
frame
electrode
ion beam
electrode assembly
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Korean (ko)
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KR20190026938A (ko
Inventor
크리스토퍼 루폴리
쉐리 에이. 드루긴
다니엘 맥길리쿠디
빅토르 제이. 세리아울트
클라우스 베커
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20190026938A publication Critical patent/KR20190026938A/ko
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00—Direct voltage accelerators; Accelerators using single pulses
    • H05H5/06—Multistage accelerators
    • H05H5/063—Tandems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/06—Two-beam arrangements; Multi-beam arrangements storage rings; Electron rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Semiconductor Memories (AREA)
KR1020197005409A 2016-08-04 2017-07-21 전극, 가속기 컬럼 및 이를 포함하는 이온 주입 장치 Active KR102448490B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/228,158 2016-08-04
US15/228,158 US9807864B1 (en) 2016-08-04 2016-08-04 Electrode, accelerator column and ion implantation apparatus including same
PCT/US2017/043277 WO2018026543A1 (en) 2016-08-04 2017-07-21 Electrode, accelerator column and ion implantation apparatus including same

Publications (2)

Publication Number Publication Date
KR20190026938A KR20190026938A (ko) 2019-03-13
KR102448490B1 true KR102448490B1 (ko) 2022-09-28

Family

ID=60142632

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197005409A Active KR102448490B1 (ko) 2016-08-04 2017-07-21 전극, 가속기 컬럼 및 이를 포함하는 이온 주입 장치

Country Status (6)

Country Link
US (1) US9807864B1 (enExample)
JP (1) JP7194100B2 (enExample)
KR (1) KR102448490B1 (enExample)
CN (1) CN109478487B (enExample)
TW (1) TWI749021B (enExample)
WO (1) WO2018026543A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019212766A1 (en) * 2018-04-30 2019-11-07 Neutron Therapeutics, Inc. Compact motor-driven insulated electrostatic particle accelerator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100538813B1 (ko) 2004-07-31 2005-12-23 주식회사 하이닉스반도체 트랜지스터 파라미터의 균일도 확보를 위한 이온주입 장치및 그를 이용한 이온주입 방법
JP2013137994A (ja) 2011-11-30 2013-07-11 Fei Co 誘導結合プラズマ源内に電極を取り付けるためのシステム

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328618A (en) 1965-09-13 1967-06-27 High Voltage Engineering Corp High-voltage acceleration tube with inserts for the electrodes
US5095208A (en) * 1988-06-24 1992-03-10 Hitachi, Ltd. Charged particle generating device and focusing lens therefor
JPH03102800A (ja) * 1989-09-18 1991-04-30 Shimadzu Corp 高周波多重極線型加速器
JPH04294043A (ja) * 1991-03-22 1992-10-19 Matsushita Electron Corp イオン注入機のチャージアップ制御装置
JPH088097A (ja) * 1994-06-20 1996-01-12 Nissin High Voltage Co Ltd 静電型イオン加速装置
JPH10270196A (ja) * 1997-03-25 1998-10-09 Nissin High Voltage Co Ltd イオン加速器用加速管
JP3858682B2 (ja) * 2001-12-12 2006-12-20 信越半導体株式会社 イオン注入装置の引出電極系およびイオン注入装置
US20060043316A1 (en) * 2003-06-10 2006-03-02 Varian Semiconductor Equipment Associates, Inc. Ion implanter having enhanced low energy ion beam transport
US20070221862A1 (en) * 2006-03-22 2007-09-27 Wayne State University Coupled Electrostatic Ion and Electron Traps for Electron Capture Dissociation - Tandem Mass Spectrometry
GB0703044D0 (en) * 2007-02-16 2007-03-28 Nordiko Technical Services Ltd Apparatus
CN101296555A (zh) * 2007-04-25 2008-10-29 和舰科技(苏州)有限公司 一种离子加速装置
TWI614788B (zh) * 2013-11-14 2018-02-11 Asml Netherlands B.V. 電極堆疊及相關之帶電粒子束產生器、帶電粒子微影系統及電極
US9281165B1 (en) * 2014-08-26 2016-03-08 Varian Semiconductor Equipment Associates, Inc. Bias electrodes for tandem accelerator
CN205726638U (zh) * 2016-06-07 2016-11-23 中国工程物理研究院核物理与化学研究所 一种强流四极透镜离子加速管

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100538813B1 (ko) 2004-07-31 2005-12-23 주식회사 하이닉스반도체 트랜지스터 파라미터의 균일도 확보를 위한 이온주입 장치및 그를 이용한 이온주입 방법
JP2013137994A (ja) 2011-11-30 2013-07-11 Fei Co 誘導結合プラズマ源内に電極を取り付けるためのシステム

Also Published As

Publication number Publication date
JP7194100B2 (ja) 2022-12-21
JP2019523531A (ja) 2019-08-22
US9807864B1 (en) 2017-10-31
KR20190026938A (ko) 2019-03-13
CN109478487B (zh) 2021-02-19
TW201816828A (zh) 2018-05-01
WO2018026543A1 (en) 2018-02-08
CN109478487A (zh) 2019-03-15
TWI749021B (zh) 2021-12-11

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