TWI749021B - 電極、加速器柱以及包含上述的離子植入裝置 - Google Patents

電極、加速器柱以及包含上述的離子植入裝置 Download PDF

Info

Publication number
TWI749021B
TWI749021B TW106121013A TW106121013A TWI749021B TW I749021 B TWI749021 B TW I749021B TW 106121013 A TW106121013 A TW 106121013A TW 106121013 A TW106121013 A TW 106121013A TW I749021 B TWI749021 B TW I749021B
Authority
TW
Taiwan
Prior art keywords
frame
insert
electrode
ion beam
electrode assembly
Prior art date
Application number
TW106121013A
Other languages
English (en)
Chinese (zh)
Other versions
TW201816828A (zh
Inventor
克里斯多夫 鲁波利
雪莉A. 德基
丹尼爾 梅吉立克帝
維克多J. 席瑞奧特
可勞斯 貝克
Original Assignee
美商瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商瓦里安半導體設備公司 filed Critical 美商瓦里安半導體設備公司
Publication of TW201816828A publication Critical patent/TW201816828A/zh
Application granted granted Critical
Publication of TWI749021B publication Critical patent/TWI749021B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00—Direct voltage accelerators; Accelerators using single pulses
    • H05H5/06—Multistage accelerators
    • H05H5/063—Tandems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/06—Two-beam arrangements; Multi-beam arrangements storage rings; Electron rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/032—Mounting or supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Semiconductor Memories (AREA)
TW106121013A 2016-08-04 2017-06-23 電極、加速器柱以及包含上述的離子植入裝置 TWI749021B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/228,158 2016-08-04
US15/228,158 US9807864B1 (en) 2016-08-04 2016-08-04 Electrode, accelerator column and ion implantation apparatus including same

Publications (2)

Publication Number Publication Date
TW201816828A TW201816828A (zh) 2018-05-01
TWI749021B true TWI749021B (zh) 2021-12-11

Family

ID=60142632

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106121013A TWI749021B (zh) 2016-08-04 2017-06-23 電極、加速器柱以及包含上述的離子植入裝置

Country Status (6)

Country Link
US (1) US9807864B1 (enExample)
JP (1) JP7194100B2 (enExample)
KR (1) KR102448490B1 (enExample)
CN (1) CN109478487B (enExample)
TW (1) TWI749021B (enExample)
WO (1) WO2018026543A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019212766A1 (en) * 2018-04-30 2019-11-07 Neutron Therapeutics, Inc. Compact motor-driven insulated electrostatic particle accelerator

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328618A (en) * 1965-09-13 1967-06-27 High Voltage Engineering Corp High-voltage acceleration tube with inserts for the electrodes
US5095208A (en) * 1988-06-24 1992-03-10 Hitachi, Ltd. Charged particle generating device and focusing lens therefor
TW200503041A (en) * 2003-06-10 2005-01-16 Varian Semiconductor Equipment Ion implanter having enhanced low energy ion beam transport
TW200605199A (en) * 2004-07-31 2006-02-01 Hynix Semiconductor Inc Ion implantation apparatus and method for implanting ions by using the same
CN101296555A (zh) * 2007-04-25 2008-10-29 和舰科技(苏州)有限公司 一种离子加速装置
WO2015071439A1 (en) * 2013-11-14 2015-05-21 Mapper Lithography Ip B.V. Multi-electrode stack arrangement
US20150357166A1 (en) * 2011-11-30 2015-12-10 Fei Company Method for attachment of an electrode into an inductively-coupled plasma

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03102800A (ja) * 1989-09-18 1991-04-30 Shimadzu Corp 高周波多重極線型加速器
JPH04294043A (ja) * 1991-03-22 1992-10-19 Matsushita Electron Corp イオン注入機のチャージアップ制御装置
JPH088097A (ja) * 1994-06-20 1996-01-12 Nissin High Voltage Co Ltd 静電型イオン加速装置
JPH10270196A (ja) * 1997-03-25 1998-10-09 Nissin High Voltage Co Ltd イオン加速器用加速管
JP3858682B2 (ja) * 2001-12-12 2006-12-20 信越半導体株式会社 イオン注入装置の引出電極系およびイオン注入装置
US20070221862A1 (en) * 2006-03-22 2007-09-27 Wayne State University Coupled Electrostatic Ion and Electron Traps for Electron Capture Dissociation - Tandem Mass Spectrometry
GB0703044D0 (en) * 2007-02-16 2007-03-28 Nordiko Technical Services Ltd Apparatus
US9281165B1 (en) * 2014-08-26 2016-03-08 Varian Semiconductor Equipment Associates, Inc. Bias electrodes for tandem accelerator
CN205726638U (zh) * 2016-06-07 2016-11-23 中国工程物理研究院核物理与化学研究所 一种强流四极透镜离子加速管

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328618A (en) * 1965-09-13 1967-06-27 High Voltage Engineering Corp High-voltage acceleration tube with inserts for the electrodes
US5095208A (en) * 1988-06-24 1992-03-10 Hitachi, Ltd. Charged particle generating device and focusing lens therefor
TW200503041A (en) * 2003-06-10 2005-01-16 Varian Semiconductor Equipment Ion implanter having enhanced low energy ion beam transport
TW200605199A (en) * 2004-07-31 2006-02-01 Hynix Semiconductor Inc Ion implantation apparatus and method for implanting ions by using the same
CN101296555A (zh) * 2007-04-25 2008-10-29 和舰科技(苏州)有限公司 一种离子加速装置
US20150357166A1 (en) * 2011-11-30 2015-12-10 Fei Company Method for attachment of an electrode into an inductively-coupled plasma
WO2015071439A1 (en) * 2013-11-14 2015-05-21 Mapper Lithography Ip B.V. Multi-electrode stack arrangement

Also Published As

Publication number Publication date
JP7194100B2 (ja) 2022-12-21
JP2019523531A (ja) 2019-08-22
US9807864B1 (en) 2017-10-31
KR20190026938A (ko) 2019-03-13
CN109478487B (zh) 2021-02-19
TW201816828A (zh) 2018-05-01
WO2018026543A1 (en) 2018-02-08
KR102448490B1 (ko) 2022-09-28
CN109478487A (zh) 2019-03-15

Similar Documents

Publication Publication Date Title
US9711318B2 (en) Ribbon beam ion source of arbitrary length
JP4925544B2 (ja) 間接的に加熱されるカソードイオンソース用の制御装置
US9659755B2 (en) Plasma generator and thermal electron emitter
US7888653B2 (en) Techniques for independently controlling deflection, deceleration and focus of an ion beam
US6686595B2 (en) Electron impact ion source
US5757018A (en) Zero deflection magnetically-suppressed Faraday for ion implanters
CN110870036A (zh) 紧凑型电离射线生成源、包括多个源的组件以及用于生产该源的方法
GB2386247A (en) Ion beam generator
WO2011127394A1 (en) Improved ion source
JP6186541B1 (ja) タンデム加速器及びイオン注入システム
US20170309434A1 (en) Ceramic Ion Source Chamber
JP2010519681A (ja) 可動マウントに取り付けられた電極を備えるイオンビーム加速装置
TWI749021B (zh) 電極、加速器柱以及包含上述的離子植入裝置
US9520204B2 (en) Cold stripper for high energy ion implanter with tandem accelerator
TWI820806B (zh) 離子源以及用於間接加熱陰極離子源的成型排斥極
US12127325B2 (en) Systems, devices, and methods for secondary particle suppression from a charge exchange device
CN102422395B (zh) 离子植入系统中所使用的电极用终端
WO2021214953A1 (ja) 荷電粒子銃および荷電粒子ビームシステム
CN110870037A (zh) 紧凑型电离射线生成源、包括多个源的组件以及用于生产该源的方法
CN108172490B (zh) 多用途灯丝气体离子源装置
JP2000113849A (ja) イオンミリング装置、イオンミリング方法、イオンビーム照射装置並びにイオンビーム照射方法
Freeman High intensity isotope separator ion source
JP2008147142A (ja) イオン注入装置