JP7191930B2 - 局所化されたエッチング用途のための半導体材料を保護するための改良されたマスク - Google Patents
局所化されたエッチング用途のための半導体材料を保護するための改良されたマスク Download PDFInfo
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- JP7191930B2 JP7191930B2 JP2020504705A JP2020504705A JP7191930B2 JP 7191930 B2 JP7191930 B2 JP 7191930B2 JP 2020504705 A JP2020504705 A JP 2020504705A JP 2020504705 A JP2020504705 A JP 2020504705A JP 7191930 B2 JP7191930 B2 JP 7191930B2
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- polyphosphazene
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000000463 material Substances 0.000 title claims description 28
- 238000005530 etching Methods 0.000 title claims description 24
- 229920002627 poly(phosphazenes) Polymers 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 18
- NGVDGCNFYWLIFO-UHFFFAOYSA-N pyridoxal 5'-phosphate Chemical compound CC1=NC=C(COP(O)(O)=O)C(C=O)=C1O NGVDGCNFYWLIFO-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- 238000003486 chemical etching Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 238000007654 immersion Methods 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 26
- 239000000243 solution Substances 0.000 description 18
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 238000004090 dissolution Methods 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910020286 SiOxNy Inorganic materials 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 241001028048 Nicola Species 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000012488 sample solution Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
- 半導体材料の第1の表面区域上への少なくとも1つのマスクの堆積、および、
- そのマスクによって被覆されていない半導体材料の第2の表面区域の、化学的エッチング、すなわち化学的攻撃による、化学的エッチング、
を含んでいる。
電気化学的堆積の代替として、堆積は、「無電解」と表される方法によって、単純に電気エネルギーの使用なしで行われることができる。これらの2つの場合において、本方法は、上記の液体アンモニア(場合により溶解された五塩化リンもしくは「PCl5」と混合された)への浸漬を含むことができる。
- 半導体材料の前記の第2の表面区域上への少なくとも1つの除去可能なプレマスクの堆積、
- ポリホスファゼンの堆積(電気化学的プロセスまたは液体アンモニアの噴霧による)、そしてポリホスファゼンはプレマスクに付着していない、
- 半導体材料の前記の第2の表面区域を暴露するように除去可能なプレマスクの単純な除去、次いで実際のエッチング操作自体を実施する、
を含むことができる。
この光線は、電子線またはレーザー光であることができる。
- 窒素、
- 高エネルギーリン、
- 炭素質汚染物質に本質的に結合された炭素および、空気へのその暴露の間にポリホスファゼン膜の汚染物質にこれも結合された酸素、
次いで低エネルギーリンおよび、インジウムに特有の特徴的信号の組み合わせからなることができ、それらは、今度は、その膜のナノメートルの厚さのために膜を通過する、InP合金のマトリックスの応答に結び付けられる。
Claims (8)
- 半導体材料の化学的エッチングの方法であって、
前記半導体材料(SC)の第1の表面区域上への少なくとも1つのマスク(PLP)の堆積、および、
前記マスク(PLP)によって被覆されていない前記半導体材料(SC)の第2の表面区域の化学的攻撃(HBr)によるエッチング(S31)、
を含んでなり、
前記マスクは、ポリホスファゼンを含む材料から作られている、そして、
前記マスク(PLP)の前記堆積が、
- 前記半導体材料(SC)の前記第2の表面区域上への少なくとも1つの除去可能なプレマスク(PM)の堆積、
- ポリホスファゼンの前記堆積、そして前記ポリホスファゼンは、前記プレマスクには接着していない、
- 前記半導体材料(SC)の前記第2の表面区域を暴露するような、前記除去可能なプレマスク(PM)の除去(HF)、
を含む、
方法。 - 前記マスク(PLP)の前記堆積が、電気化学的プロセスによるポリホスファゼンの堆積を含む、請求項1記載の方法。
- 前記マスク(PLP)の前記堆積が、液体アンモニア中への浸漬プロセス、それに続くポリホスファゼンの前記堆積を含む、請求項1または2記載の方法。
- 前記プレマスクが、酸窒化ケイ素(SiOxNy)を基にした材料から生成される、請求項1~3のいずれか1項記載の方法。
- 前記除去可能なプレマスク(PM)が、フッ化水素(HF)溶液中への浸漬によって除去される、請求項4記載の方法。
- 前記第1の表面区域を被覆する前記マスクを形成するために、ポリホスファゼンの前記堆積が、ビームによってエッチングされる、請求項2または3記載の方法。
- 前記ビームが、電子ピーム(eB)である、請求項6記載の方法。
- 前記エッチングが、酸化性溶液(HBr)を適用することによって行われる、請求項1~7のいずれか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1757294A FR3069701B1 (fr) | 2017-07-31 | 2017-07-31 | Masque perfectionne de protection d'un materiau semiconducteur pour des applications de gravure localisee |
FR1757294 | 2017-07-31 | ||
PCT/EP2018/070687 WO2019025418A1 (fr) | 2017-07-31 | 2018-07-31 | Masque perfectionné de protection d'un matériau semiconducteur pour des applications de gravure localisée |
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Publication Number | Publication Date |
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JP2020529728A JP2020529728A (ja) | 2020-10-08 |
JP7191930B2 true JP7191930B2 (ja) | 2022-12-19 |
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JP2020504705A Active JP7191930B2 (ja) | 2017-07-31 | 2018-07-31 | 局所化されたエッチング用途のための半導体材料を保護するための改良されたマスク |
Country Status (5)
Country | Link |
---|---|
US (1) | US11043390B2 (ja) |
EP (1) | EP3662506A1 (ja) |
JP (1) | JP7191930B2 (ja) |
FR (1) | FR3069701B1 (ja) |
WO (1) | WO2019025418A1 (ja) |
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JP2002151464A (ja) | 2000-11-16 | 2002-05-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体基板への穴部の作製方法 |
JP2014518449A (ja) | 2011-06-14 | 2014-07-28 | サントル・ナショナル・ドゥ・ラ・レシェルシュ・サイエンティフィーク−セ・エン・エール・エス− | Iii−v半導体材料で作られた製品の表面を化学的にパッシベートする方法およびその方法で得られた製品 |
WO2016048336A1 (en) | 2014-09-26 | 2016-03-31 | Intel Corporation | Selective gate spacers for semiconductor devices |
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JPS6444927A (en) * | 1987-08-13 | 1989-02-17 | Oki Electric Ind Co Ltd | Resist pattern forming method |
JP2506952B2 (ja) * | 1988-06-29 | 1996-06-12 | 松下電器産業株式会社 | 微細パタ―ン形成方法 |
US6866901B2 (en) * | 1999-10-25 | 2005-03-15 | Vitex Systems, Inc. | Method for edge sealing barrier films |
DK1432380T3 (da) * | 2001-08-17 | 2007-01-15 | Polyzenix Gmbh | Indretning baseret på nitrol med et overtræk af polyphosphazen |
US6911400B2 (en) * | 2002-11-05 | 2005-06-28 | International Business Machines Corporation | Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same |
US7732885B2 (en) * | 2008-02-07 | 2010-06-08 | Aptina Imaging Corporation | Semiconductor structures with dual isolation structures, methods for forming same and systems including same |
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2017
- 2017-07-31 FR FR1757294A patent/FR3069701B1/fr active Active
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2018
- 2018-07-31 JP JP2020504705A patent/JP7191930B2/ja active Active
- 2018-07-31 EP EP18743834.6A patent/EP3662506A1/fr active Pending
- 2018-07-31 US US16/633,028 patent/US11043390B2/en active Active
- 2018-07-31 WO PCT/EP2018/070687 patent/WO2019025418A1/fr unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002151464A (ja) | 2000-11-16 | 2002-05-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体基板への穴部の作製方法 |
JP2014518449A (ja) | 2011-06-14 | 2014-07-28 | サントル・ナショナル・ドゥ・ラ・レシェルシュ・サイエンティフィーク−セ・エン・エール・エス− | Iii−v半導体材料で作られた製品の表面を化学的にパッシベートする方法およびその方法で得られた製品 |
WO2016048336A1 (en) | 2014-09-26 | 2016-03-31 | Intel Corporation | Selective gate spacers for semiconductor devices |
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Publication number | Publication date |
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US20200211855A1 (en) | 2020-07-02 |
US11043390B2 (en) | 2021-06-22 |
WO2019025418A1 (fr) | 2019-02-07 |
JP2020529728A (ja) | 2020-10-08 |
FR3069701A1 (fr) | 2019-02-01 |
EP3662506A1 (fr) | 2020-06-10 |
FR3069701B1 (fr) | 2019-12-20 |
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