JP7188915B2 - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

2. Description of the Related Art Conventionally, a semiconductor device is known that includes a semiconductor chip that is sealed with a sealing member and has electrodes that are electrically connected to a frame via connectors.

For example, as shown in FIGS. 5A and 5B, when the solder material Z on the semiconductor chip X is melted in the furnace when connecting the connector S and the electrode, the solder material is deposited on the lower surface of the joint portion of the connector S. It is conceivable that Z is wet and spreads, and it cools and hardens as it is.

Depending on the amount and shape of the solder material Z that leaks and spreads, the creepage distance between the semiconductor chip X and the solder material may be shortened, resulting in a decrease in reliability.

Here, for example, as a prior art disclosed in Patent Document 1, the terminal and the wiring are provided with a surface layer made of gold, and the surface layer is formed so that the connection portion of the wiring with the terminal is soldered across the width direction of the wiring. A wiring board made of an alloy of gold and any one of chromium, platinum, titanium, and aluminum, which is difficult to wet with the material, is disclosed.

In this wiring board, the solder material and the hard-to-wet alloy prevent the solder material from spreading from the terminal to the wiring.

However, this prior art does not improve the reliability of the semiconductor chip by preventing the solder material from leaking and spreading in the connectors connected to the semiconductor chip.

JP 2013-175508

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a semiconductor device capable of improving the reliability of a semiconductor chip by suppressing the spread of leakage of a solder material to a connector during bonding.

A semiconductor device according to an embodiment of an aspect of the present invention comprises:
a sealing member;
a semiconductor chip sealed by the sealing member and having an upper electrode provided on the upper surface and a lower electrode provided on the lower surface;
arranged to extend in a first direction, one end is sealed by the sealing member, a mounting region is provided on an upper surface of the one end for placing the semiconductor chip thereon, and the other end is is exposed from the sealing member; and
a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and a mounting region on the upper surface of the first frame in the sealing member and has conductivity;
A second semiconductor device arranged to extend in the first direction, having a connection region on an upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member a frame;
a first joint portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; and the connection region on an upper surface of one end portion of the second frame. a connector made of metal, having a second joint portion electrically connected;
a second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member and has conductivity;
The sealing member M includes a third conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame and has conductivity. ,
In an intermediate region of the lower surface between the first joint portion and the second joint portion of the connector, the second conductive joint material is provided between the first joint portion and the upper electrode of the semiconductor chip. an oxide film of the metal is formed to suppress leaking and spreading from between to the intermediate region;
The oxide film is formed by irradiating the metal forming the connector with a laser.

In the semiconductor device,
the metal constituting the connector is copper,
The oxide film is characterized by being a copper oxide film.

In the semiconductor device,
The first conductive bonding material, the second conductive bonding material, and the third conductive bonding material are solder materials.

In the semiconductor device,
The oxide film is
The intermediate region on the lower surface of the connector is formed continuously across both ends in a second direction perpendicular to the first direction.

In the semiconductor device,
The oxide film is formed at least on a portion of the intermediate region on the lower surface of the connector, the portion being close to the first joint portion.

In the semiconductor device,
The connector is
a first sloping portion having one end connected to the first joint and sloping upward from the first joint;
an intermediate portion having one end connected to the other end of the first inclined portion;
a second inclined portion, one end of which is connected to the other end of the intermediate portion, the other end of which is joined to the second joint portion, and which is inclined downward from the intermediate portion toward the second joint portion;
The intermediate region of the lower surface of the connector,
It includes a lower surface of the first inclined portion, a lower surface of the intermediate portion, and a lower surface of the second inclined portion.

In the semiconductor device,
The oxide film is
It is characterized by being formed over the entire lower surface of the first inclined portion.

In the semiconductor device,
The oxide film is
It is characterized in that it is formed over the entire lower surfaces of the first inclined portion and the intermediate portion.

In the semiconductor device,
The oxide film is
It is characterized in that a plurality of the first inclined portions are continuously formed over both ends in the second direction of the lower surface of the first inclined portion.

In the semiconductor device,
The oxide film is
The outer shape of the connector is formed by irradiating a laser onto a surface of a region corresponding to the intermediate region of the connector in a metal plate before being punched out by a molding press.

In the semiconductor device,
The oxide film is
It is formed by irradiating a laser onto a surface of a region corresponding to the intermediate region of the connector in a metal plate after the outer shape of the connector is punched out by a molding press.

In the semiconductor device,
In the sealing member, the height of the upper surface of the one end of the first frame is the same as the height of the upper surface of the one end of the second frame.

In the semiconductor device,
The vertical thickness of the connector is thinner than the vertical thickness of the first and second frames.

In the semiconductor device,
In a region adjacent to the one end portion of the first frame, the first conductive bonding material is applied to the first conductive bonding material when bonding the lower electrode of the semiconductor chip and the mounting region of the first frame. A groove is formed to prevent the flow of fluid to the other end side of the frame.

A method for manufacturing a semiconductor device according to an embodiment of an aspect of the present invention includes:
a sealing member; a semiconductor chip sealed by the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; a first frame having one end sealed by the sealing member, having a mounting region on which the semiconductor chip is arranged on the upper surface of the one end, and having the other end exposed from the sealing member; a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and a mounting region on the upper surface of the first frame and has conductivity with the sealing member M; a second frame arranged to extend in a direction, having a connection region on an upper surface of one end sealed by the sealing member M, and having the other end exposed from the sealing member M; a first joint disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; and the connection region on the upper surface of one end of the second frame. a connector made of metal; and a connector between the upper electrode of the semiconductor chip and the first connector of the connector in the sealing member. a second conductive bonding material that bonds between and has electrical conductivity; and, in the sealing member M, between the second bonding portion of the connector and the connection region on the upper surface of the second frame. A method for manufacturing a semiconductor device comprising a third conductive bonding material that bonds and has conductivity,
The second conductive bonding material is provided in an intermediate region of the lower surface between the first bonding portion and the second bonding portion of the connector between the first bonding portion and the upper electrode of the semiconductor chip. The oxide film of the metal that suppresses leakage and spreading from the gap to the intermediate region is formed by irradiating the metal that constitutes the connector with a laser.

A semiconductor device according to an aspect of the present invention includes a sealing member, a semiconductor chip sealed with the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; one end is sealed with a sealing member, has a mounting area on the upper surface of one end where a semiconductor chip is arranged, and the other end is exposed from the sealing member a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame in the sealing member and has electrical conductivity; a second frame arranged to extend in a direction of and having a connection region on an upper surface of one end portion sealed by the sealing member and having the other end portion exposed from the sealing member; A first joint portion disposed above the semiconductor chip in the member and electrically connected to the upper electrode of the semiconductor chip; a connector made of metal; and a second conductive member that joins between the upper electrode of the semiconductor chip and the first joint portion of the connector in the sealing member and has conductivity. a bonding material; and a third conductive bonding material bonding between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member and having electrical conductivity.

A second conductive bonding material is applied from between the first bonding portion and the upper electrode of the semiconductor chip to the intermediate region of the lower surface between the first bonding portion and the second bonding portion of the connector. A metal oxide film is formed to suppress the leakage and spread of the connector, and the oxide film is formed by irradiating the metal constituting the connector with a laser.

In this way, by irradiating the intermediate region of the lower surface between the first joint portion and the second joint portion of the connector, the connector is burnt, that is, an oxide film is formed in the intermediate region of the connector. As a result, the oxide film in the intermediate region prevents the solder material from wetting and spreading.

As a result, according to the semiconductor device of the present invention, it is possible to suppress the leakage and spread of the solder material to the connector at the time of bonding, thereby improving the reliability of the semiconductor chip.

FIG. 1A is a top view showing an example of a configuration of a semiconductor device 100 according to Example 1. FIG. FIG. 1B is a side view showing an example of the configuration of the semiconductor device 100 shown in FIG. 1A according to the first embodiment. FIG. 2A is a top view showing an example of the appearance of the metal plate P after laser irradiation before being processed into the connector S of the semiconductor device 100 in the manufacturing method of the semiconductor device 100 according to the first embodiment. FIG. 2B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 2A. FIG. 2C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 2A. FIG. 2D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 2B and 2C. FIG. 3A is a top view showing an example of the appearance of the metal plate P after laser irradiation before being processed into the connector S of the semiconductor device 100 in the manufacturing method of the semiconductor device 100 according to the second embodiment. FIG. 3B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 3A. FIG. 3C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 3A. FIG. 3D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 3B and 3C. FIG. 4A is a top view showing an example of the appearance of the metal plate P after laser irradiation before being processed into the connector S of the semiconductor device 100 in the manufacturing method of the semiconductor device 100 according to the third embodiment. FIG. 4B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 4A. FIG. 4C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the forming press after the step shown in FIG. 4A. FIG. 4D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 4B and 4C. FIG. 5A is a side view showing an example of a configuration focusing on a region near a connector of a conventional semiconductor device. FIG. 5B is a perspective view showing an example of a configuration focusing on a region near the connector of the conventional semiconductor device shown in FIG. 5A.

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment according to the present invention will be described below with reference to the drawings.

FIG. 1A is a top view showing an example of a configuration of a semiconductor device 100 according to Example 1. FIG. FIG. 1B is a side view showing an example of the configuration of the semiconductor device 100 shown in FIG. 1A according to the first embodiment.

In addition, in FIG. 1A and FIG. 1B, the sealing member M is illustrated so as to be seen through.

For example, as shown in FIGS. 1A and 1B, the semiconductor device 100 according to the first embodiment includes a sealing member M, a semiconductor chip X, a first frame F1, a second frame F2, and a first A conductive bonding material Z1, a second conductive bonding material Z2, a third conductive bonding material Z3, and a connector S are provided.
The sealing member M is, for example, sealing resin such as epoxy resin.

1A and 1B, the sealing member M includes, for example, a semiconductor chip X, one end portion F1a of the first frame F1, one end portion F2a of the second frame F2, and a first conductive bonding material. Z1, the second conductive bonding material Z2, the third conductive bonding material Z3, and the connector S are sealed.

1A and 1B, the semiconductor chip X is sealed with a sealing member M and has an upper electrode X2 provided on the upper surface and a lower electrode X1 provided on the lower surface.

This semiconductor chip X is, for example, a diode. In this case, for example, the anode of the diode corresponds to the upper electrode X2 and the cathode of the diode corresponds to the lower electrode X1, but the relationship may be reversed.

Also, this semiconductor chip X may be applied to a semiconductor element other than the diode described above.

Also, the first frame F1 is arranged to extend in the first direction D1, for example, as shown in FIGS. 1A and 1B.

One end portion F1a of the first frame F1 is sealed with a sealing member M, and a mounting region in which the semiconductor chip X is arranged is provided on the upper surface of the one end portion F1a.

The other end F1b of the first frame F1 is exposed (protrudes) from the sealing member M. As shown in FIG.

Also, the first conductive bonding material Z1 bonds between the lower electrode X1 of the semiconductor chip X and the mounting area on the upper surface of the first frame F1 in the sealing member M. As shown in FIG.

This first conductive bonding material Z1 has conductivity. This first conductive bonding material Z1 is, for example, a solder material.

Here, for example, as shown in FIG. 1A, in a region close to one end portion F1a of the first frame F1, when the lower electrode X1 of the semiconductor chip X is bonded to the mounting region of the first frame F1, a first A groove F1k is formed to prevent one conductive bonding material Z1 from flowing toward the other end portion F1b of the first frame F1.

The second frame F2 is arranged to extend in the first direction D1, has a connection region on the upper surface of one end F2a sealed by the sealing member M, and has the other end It is exposed from the sealing member M.

Further, the connector S is arranged above the semiconductor chip X within the sealing member M, as shown in FIGS. 1A and 1B, for example.

For example, as shown in FIGS. 1A and 1B, the connector S includes a first joint portion Sa, a first inclined portion Sb, an intermediate portion Sc, a second inclined portion Sd, and a second joint portion Se. ,including.

The first joint portion Sa is electrically connected to the upper electrode X2 of the semiconductor chip X by a second conductive joint material Z2.

In addition, the second joint Se is electrically connected to a connection region on the upper surface of the one end F2a of the second frame F2 by a third conductive joint material Z3.

The first inclined portion Sb has one end connected to the first joint portion Sa and is inclined upward from the first joint portion Sa.

One end of the intermediate portion Sc is connected to the other end of the first inclined portion Sb.

One end of the second inclined portion Sd is connected to the other end of the intermediate portion Sc, and the other end is joined to the second joint portion Se. The second inclined portion Sd is inclined downward from the intermediate portion Sc toward the second joint portion Se.

The above-described intermediate region of the lower surface of the connector S includes the lower surface of the first inclined portion Sb, the lower surface of the intermediate portion Sc, and the lower surface of the second inclined portion Sd.

Here, for example, as shown in FIG. 1B, a second conductive bonding material Z2 is provided in an intermediate region of the lower surface between the first bonding portion Sa and the second bonding portion Se of the connector S. A metal oxide film L1 is formed to suppress leaking and spreading from between the joint portion Sa and the upper electrode X2 of the semiconductor chip to the intermediate region. This oxide film L1 is formed by irradiating the metal constituting the connector S with a laser.

In addition, the metal which comprises this connection terminal S is copper, for example. In this case, oxide film L1 is a copper oxide film.

The oxide film L1 is formed, for example, continuously across both ends of the middle region of the lower surface of the connector S in a second direction D2 (width direction) orthogonal to the first direction D1.

Further, the oxide film L1 is formed, for example, at least in a portion of the intermediate region of the lower surface of the connector S, which is close to the first joint portion Sa, as shown in FIG. 1B.

The oxide film L1 is formed, for example, over the entire lower surface of the first inclined portion Sb, as shown in FIG. 1B.

In particular, the oxide film L1 is formed, for example, over the entire lower surfaces of the first inclined portion Sb and the intermediate portion Sc, as shown in FIG. 1B.

The oxide film L1 is formed, for example, by irradiating the surface of the area corresponding to the intermediate area of the connector S in the metal plate before the external shape of the connector S is punched out by a molding press. good too.

Further, the oxide film L1 is formed by, for example, irradiating a laser onto the surface of the area corresponding to the intermediate area of the connector S in the metal plate after the outer shape of the connector S is punched by a molding press. may

Also, the second conductive bonding material Z2 bonds between the upper electrode X2 of the semiconductor chip X and the first bonding portion Sa of the connector S within the sealing member M. As shown in FIG.

This second conductive bonding material Z2 has conductivity. This second conductive bonding material Z2 is, for example, a solder material.

Further, the third conductive bonding material Z3 bonds between the second bonding portion Se of the connector S and the connection region on the upper surface of the second frame F2 within the sealing member M. .

This third conductive bonding material Z3 has conductivity. This third conductive bonding material Z3 is, for example, a solder material.

Here, the connector S is made of metal, for example. More specifically, this connector S is made of copper.

The vertical thickness of the connector S is set to be thinner than the vertical thickness of the first and second frames F1 and F2, for example.

The width of the first joint portion Sa of the connector S in the second direction D2 orthogonal to the first direction D1 is, for example, the width of the semiconductor chip in the second direction D2, as shown in FIGS. 1A and 1B. It is set to be smaller than the width of the X upper electrode X2.

Furthermore, the width of the first joint portion Sa of the connector S in the second direction D2 is smaller than the width of the upper surface of the semiconductor chip X in the second direction D2, as shown in FIGS. 1A and 1B, for example. is set to be

For example, the first joint portion Sa of the connector S is provided with a projecting portion (not shown) that protrudes downward and is formed by projecting the center of the first joint portion Sa of the connector S downward. may be In this case, the projecting portion (not shown) is electrically connected to the upper surface of the upper electrode X2 of the semiconductor chip X within the sealing member M via the second conductive bonding material Z2.
Furthermore, the area of the first joint portion Sa of the connector S may be set to be larger than the area of the upper surface of the upper electrode X2 of the semiconductor chip X, for example.

The width of the first joint portion Sa of the connector S in the second direction D2 is, for example, larger than the width of the mounting area of the one end portion F1a of the first frame F1 in the second direction D2. may be set.
In the sealing member M, for example, as shown in FIGS. 1A and 1B, the height of the upper surface of the one end F1a of the first frame F1 is equal to the height of the upper surface of the one end F2a of the second frame F2. is set to be the same as

Here, an example of a method of manufacturing a semiconductor device having the above configuration will be briefly described with attention paid to the configuration of the connector S. FIG.

FIG. 2A is a top view showing an example of the appearance of the metal plate P after laser irradiation before being processed into the connector S of the semiconductor device in the method of manufacturing the semiconductor device according to the first embodiment. FIG. 2B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 2A. FIG. 2C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 2A. FIG. 2D is a side view showing an example of the external appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 2B and 2C.

As described above, the semiconductor device 100 includes the sealing member M, the semiconductor chip X, the first frame F1, the second frame F2, the first conductive bonding material Z1, and the second conductive a conductive bonding material Z2, a third conductive bonding material Z3, and a connector S (FIGS. 1A and 1B).
Then, in the method for manufacturing the semiconductor device 100 according to the first embodiment, for example, as shown in FIGS. In addition, the connector S is formed of a metal oxide film L1 that suppresses leakage and spreading of the second conductive bonding material Z2 from between the first bonding portion Sa and the upper electrode X2 of the semiconductor chip X to the intermediate region. It is formed by irradiating a laser to a metal that

The oxide film L1 may be formed by irradiating the surface of the region corresponding to the intermediate region of the connector S in the metal plate P before the external shape of the connector S is punched out by the molding press ( Figure 2A).

Alternatively, the oxide film L1 may be formed by irradiating a laser onto the surface of the region corresponding to the intermediate region of the connector S in the metal plate P after the outer shape of the connector S is punched by the molding press. .

As described above, the semiconductor device according to the first embodiment is a semiconductor chip that is sealed by the sealing member M and has the upper electrode provided on the upper surface and the lower electrode provided on the lower surface. X and are arranged to extend in the first direction, one end is sealed with a sealing member, has a mounting region on the upper surface of one end where a semiconductor chip is arranged, and the other end is exposed from the encapsulation member, and a first conductor having electrical conductivity and bonding between the lower electrode of the semiconductor chip and the mounting region on the top surface of the first frame in the encapsulation member. and a bonding material arranged to extend in a first direction and having a connection region on the upper surface of one end sealed by a sealing member and a second end exposed from the sealing member 2, a first joint portion Sa disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip, and a connection region on the upper surface of one end portion of the second frame. and a second joint portion Se electrically connected to the connector S made of metal, and the upper electrode of the semiconductor chip and the first joint portion of the connector are joined in the sealing member. and a second conductive bonding material having conductivity, and a second conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member and has conductivity. 3 conductive bonding materials.

A second conductive bonding material is applied from between the first bonding portion and the upper electrode of the semiconductor chip to the intermediate region of the lower surface between the first bonding portion and the second bonding portion of the connector. A metal oxide film L1 is formed to suppress the leakage and spread of the connector, and the oxide film L1 is formed by irradiating the metal constituting the connector with a laser.

In this way, by irradiating the intermediate region of the lower surface of the connector S between the first joint portion Sa and the second joint portion Se with the laser, the connector is burnt, that is, the oxide film L1 is formed on the intermediate region of the connector. is formed, the oxide film L1 in the intermediate region prevents the solder material from wetting and spreading.

That is, according to the semiconductor device of this embodiment, it is possible to suppress the leakage and spread of the solder material to the connector at the time of bonding, thereby improving the reliability of the semiconductor chip.

In the above-described Embodiment 1, an example of a configuration and a manufacturing method for suppressing leakage and spread of solder material to the connector when joining the semiconductor device 100 has been described. In the second embodiment, another example of the manufacturing method for suppressing the spread of leakage of the solder material to the connector when joining the semiconductor device will be described.

FIG. 3A is a top view showing an example of the appearance of the metal plate P after laser irradiation before being processed into the connector S of the semiconductor device in the manufacturing method of the semiconductor device according to the second embodiment. FIG. 3B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the forming press after the step shown in FIG. 3A. FIG. 3C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 3A. FIG. 3D is a side view showing an example of the external appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 3B and 3C.

In Example 2, instead of the oxide film L1 of Example 1, as shown in FIGS. In addition, the connector S is formed of a metal oxide film L2 that prevents the second conductive bonding material Z2 from leaking and spreading from between the first bonding portion Sa and the upper electrode X2 of the semiconductor chip X to the intermediate region. It is formed by irradiating a laser to a metal that

Here, for example, as shown in FIGS. 3A to 3D, the oxide film L2 is formed over the entire lower surfaces of the first inclined portion Sb and the intermediate portion Sc of the connector S. As shown in FIG.

Other configurations of the semiconductor device according to the second embodiment are the same as those of the first embodiment.

That is, in the semiconductor device according to the second embodiment, as in the first embodiment, the second conductive bonding material is provided in the intermediate region of the lower surface between the first bonding portion and the second bonding portion of the connector. , a metal oxide film is formed to suppress leaking and spreading from between the first joint portion and the upper electrode of the semiconductor chip to the intermediate region, and the oxide film is formed by irradiating the metal constituting the connector with a laser. It is

As a result, the semiconductor device according to the second embodiment burns out the connector by irradiating the intermediate region of the lower surface between the first joint portion and the second joint portion of the connector with a laser, as in the first embodiment. That is, by forming an oxide film in the intermediate region of the connector, the oxide film in the intermediate region prevents the solder material from wetting and spreading.

That is, according to the semiconductor device of the second embodiment, it is possible to suppress the leakage and spread of the solder material to the connector at the time of bonding, thereby improving the reliability of the semiconductor chip.

In the above-described second embodiment, another example of the manufacturing method for suppressing the spread of leakage of the solder material to the connector during bonding of the semiconductor device has been described. In the third embodiment, still another example of the manufacturing method for suppressing the spread of leakage of the solder material to the connector during bonding of the semiconductor device will be described.

FIG. 4A is a top view showing an example of the appearance of the metal plate P after laser irradiation before being processed into the connector S of the semiconductor device in the manufacturing method of the semiconductor device according to the third embodiment. FIG. 4B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 4A. Also, FIG. 4C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S is punched out by the molding press after the step shown in FIG. 4A. FIG. 4D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 4B and 4C.

In Example 3, instead of the oxide film L1 of Example 1, as shown in FIGS. In addition, the metal oxide films L3a and L3b for suppressing leakage and spreading of the second conductive bonding material Z2 from between the first bonding portion Sa and the upper electrode X2 of the semiconductor chip X to the intermediate region are provided to the connector S is formed by irradiating a laser to the metal that constitutes the

Here, for example, as shown in FIGS. 4A and 4B, a plurality of oxide films L3a and L3b (two films in the example shown) extend over both ends of the lower surface of the first inclined portion Sb in the second direction D2. It may be formed continuously.

Other configurations of the semiconductor device according to the third embodiment are the same as those of the first embodiment.

That is, in the semiconductor device according to the third embodiment, as in the first embodiment, the second conductive bonding material is provided in the intermediate region of the lower surface between the first bonding portion and the second bonding portion of the connector. , a metal oxide film is formed to suppress leaking and spreading from between the first joint portion and the upper electrode of the semiconductor chip to the intermediate region, and the oxide film is formed by irradiating the metal constituting the connector with a laser. It is

As a result, the semiconductor device according to the third embodiment burns out the connector by irradiating the intermediate region of the lower surface between the first joint portion and the second joint portion of the connector with a laser, as in the first embodiment. That is, by forming an oxide film in the intermediate region of the connector, the oxide film in the intermediate region prevents the solder material from wetting and spreading.

That is, according to the semiconductor device of Example 3, it is possible to suppress the leakage and spread of the solder material to the connector at the time of bonding, thereby improving the reliability of the semiconductor chip.

As described above, a semiconductor device according to an aspect of the present invention is a semiconductor chip that includes a sealing member, an upper electrode that is sealed by the sealing member, and that is provided on the upper surface and a lower electrode that is provided on the lower surface. and are arranged to extend in a first direction, one end is sealed with a sealing member, the top surface of one end has a mounting region where a semiconductor chip is arranged, and the other end is A first conductive joint that joins between the first frame exposed from the sealing member and the mounting region of the upper surface of the first frame and the lower electrode of the semiconductor chip in the sealing member and has electrical conductivity. and a second substrate arranged to extend in the first direction, having a connection region on the upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member. a frame, a first joint portion disposed above the semiconductor chip in the sealing member and electrically connected to an upper electrode of the semiconductor chip, and a connection region on the upper surface of one end portion of the second frame. a connected second joint portion, the contactor made of metal, and the contactor connecting between the upper electrode of the semiconductor chip and the first contact portion of the contactor in the sealing member and having electrical conductivity; a second conductive bonding material; and a third conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member and has electrical conductivity. And prepare.

A second conductive bonding material is applied from between the first bonding portion and the upper electrode of the semiconductor chip to the intermediate region of the lower surface between the first bonding portion and the second bonding portion of the connector. A metal oxide film is formed to suppress the leakage and spread of the connector, and the oxide film is formed by irradiating the metal constituting the connector with a laser.

In this way, by irradiating the intermediate region of the lower surface between the first joint portion and the second joint portion of the connector, the connector is burnt, that is, an oxide film is formed in the intermediate region of the connector. As a result, the oxide film in the intermediate region prevents the solder material from wetting and spreading.

As a result, according to the semiconductor device of the present invention, it is possible to suppress the leakage and spread of the solder material to the connector at the time of bonding, thereby improving the reliability of the semiconductor chip.

While several embodiments of the invention have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and modifications can be made without departing from the scope of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, as well as the scope of the invention described in the claims and equivalents thereof.

100 semiconductor device M sealing member X semiconductor chip F1 first frame F2 second frame Z1 first conductive bonding material Z2 second conductive bonding material Z3 third conductive bonding material S connector Sa first Joint portion Sb First inclined portion Sc Intermediate portion Sd Second inclined portion
Se 2nd junction
F1k groove

Claims (11)

a sealing member;
a semiconductor chip sealed by the sealing member and having an upper electrode provided on the upper surface and a lower electrode provided on the lower surface;
arranged to extend in a first direction, one end is sealed by the sealing member, a mounting region is provided on an upper surface of the one end for placing the semiconductor chip thereon, and the other end is is exposed from the sealing member; and
a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and a mounting region on the upper surface of the first frame in the sealing member and has conductivity;
A second semiconductor device arranged to extend in the first direction, having a connection region on an upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member a frame;
a first joint portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; and the connection region on an upper surface of one end portion of the second frame. a connector made of metal, having a second joint portion electrically connected;
a second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member and has conductivity;
the sealing member includes a third conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame and has conductivity;
In an intermediate region of the lower surface between the first joint portion and the second joint portion of the connector, the second conductive joint material is provided between the first joint portion and the upper electrode of the semiconductor chip. an oxide film of the metal is formed to suppress leaking and spreading from between to the intermediate region;
The connector is
a first sloping portion having one end connected to the first joint and sloping upward from the first joint;
an intermediate portion having one end connected to the other end of the first inclined portion;
a second inclined portion, one end of which is connected to the other end of the intermediate portion, the other end of which is joined to the second joint portion, and which is inclined downward from the intermediate portion toward the second joint portion;
The intermediate region of the lower surface of the connector,
including a lower surface of the first inclined portion, a lower surface of the intermediate portion, and a lower surface of the second inclined portion;
The oxide film is formed by irradiating the metal constituting the connector with a laser,
The semiconductor device, wherein the oxide film is formed over the entire lower surface of the first inclined portion. the metal constituting the connector is copper,
2. The semiconductor device according to claim 1, wherein said oxide film is a copper oxide film. 3. The semiconductor device according to claim 2, wherein the first conductive bonding material, the second conductive bonding material, and the third conductive bonding material are solder materials. The oxide film is
4. The semiconductor device according to claim 3, wherein said intermediate region on the lower surface of said connector is formed continuously across both ends in a second direction orthogonal to said first direction. 5. The semiconductor device according to claim 4, wherein the oxide film is formed at least on a portion of the intermediate region on the lower surface of the connector, the portion being close to the first junction. The oxide film is
2. The semiconductor device according to claim 1, wherein said first inclined portion and said intermediate portion are formed over the entire lower surfaces thereof. The oxide film is
5. The semiconductor device according to claim 4 , wherein the lower surface of the first inclined portion is continuously formed over both ends in the second direction. 8. In the sealing member, the height of the top surface of the one end of the first frame is the same as the height of the top surface of the one end of the second frame. The semiconductor device according to any one of 1. 9. The semiconductor device according to claim 8, wherein the vertical thickness of the connector is thinner than the vertical thickness of the first and second frames. In a region adjacent to the one end portion of the first frame, the first conductive bonding material is applied to the first conductive bonding material when bonding the lower electrode of the semiconductor chip and the mounting region of the first frame. 10. The semiconductor device according to claim 9, wherein a groove is formed to prevent flow to said other end side of said frame. a sealing member; a semiconductor chip sealed by the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; a first frame having one end sealed by the sealing member, having a mounting region on which the semiconductor chip is arranged on the upper surface of the one end, and having the other end exposed from the sealing member; a first conductive bonding material having electrical conductivity for bonding between the lower electrode of the semiconductor chip and a mounting region on the top surface of the first frame with the sealing member; a second frame having a connection region on an upper surface of one end sealed by the sealing member and having the other end exposed from the sealing member; a first joint portion disposed above the semiconductor chip in the stopper member and electrically connected to the upper electrode of the semiconductor chip; a connector made of metal; and a connector between the upper electrode of the semiconductor chip and the first connector of the connector in the sealing member. and a second conductive bonding material having conductivity and bonding between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member; A method for manufacturing a semiconductor device comprising a third conductive bonding material having conductivity,
The second conductive bonding material is provided in an intermediate region of the lower surface between the first bonding portion and the second bonding portion of the connector between the first bonding portion and the upper electrode of the semiconductor chip. An oxide film of the metal that suppresses leakage and spreading from the gap to the intermediate region is formed by irradiating the metal that constitutes the connector with a laser,
The connector includes a first slanted portion having one end connected to the first joint portion and slanted upward from the first joint portion, and an intermediate portion having one end connected to the other end of the first slanted portion; a second inclined portion having one end connected to the other end of the intermediate portion, the other end joined to the second joint portion, and inclined downward from the intermediate portion toward the second joint portion; the intermediate region of the lower surface of the connector includes the lower surface of the first inclined portion, the lower surface of the intermediate portion, and the lower surface of the second inclined portion;
The method of manufacturing a semiconductor device, wherein the oxide film is formed over the entire lower surface of the first inclined portion.

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