JP2019220653A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

To provide a semiconductor device capable of improving reliability of a semiconductor chip by suppressing a spread of a solder material to a connector during joining.SOLUTION: In the semiconductor device, at an intermediate portion Sc on a lower surface between a first joint Sa and a second joint Se of a connector S, a metal oxide film is formed to prevent a second conductive bonding material from leaking and spreading from between the first joint Sa and an upper electrode of a semiconductor chip X to an intermediate portion Sc. The oxide film is formed by irradiating the metal constituting the connector S with laser.SELECTED DRAWING: Figure 1A

Description

  The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

  2. Description of the Related Art Conventionally, there has been known a semiconductor device including a semiconductor chip having electrodes sealed by a sealing member and electrically connected to a frame via connectors.

  Then, as shown in FIGS. 5A and 5B, when the solder material Z on the semiconductor chip X is melted in the furnace when connecting the connector S and the electrode, the solder material is formed on the lower surface of the joint of the connector S. It is conceivable that Z spreads wet and cools as it is.

  Depending on the amount and shape of the solder material Z leaking and spreading, there is a concern that the creeping distance between the semiconductor chip X and the solder material is shortened and the reliability is reduced.

  Here, for example, as a conventional technique described in Patent Document 1, the terminal and the wiring are provided with a surface layer made of gold. There is disclosed a wiring board made of an alloy of gold and any one of chromium, platinum, titanium, and aluminum, which hardly wets a material.

  In this wiring board, the spread of the solder material from the terminal to the wiring is prevented by the alloy that is hard to wet with the solder material.

  However, this conventional technique does not improve the reliability of the semiconductor chip by preventing the solder material from leaking and spreading in the connector connected to the semiconductor chip.

JP 2013-175508

  Accordingly, an object of the present invention is to provide a semiconductor device capable of suppressing the spread of a solder material to a connector at the time of joining and improving the reliability of a semiconductor chip.

A semiconductor device according to an embodiment of the present invention includes:
A sealing member;
A semiconductor chip having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface, which is sealed by the sealing member,
One end portion is sealed by the sealing member, and has a mounting area on the upper surface of the one end portion where the semiconductor chip is arranged; and the other end portion is arranged so as to extend in the first direction. A first frame exposed from the sealing member,
Within the sealing member, a first conductive bonding material that has a conductive property by bonding between the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame;
A second region that is arranged to extend in the first direction, has a connection region on an upper surface of one end portion sealed by the sealing member, and has the other end portion exposed from the sealing member. Frame and
A first bonding portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; and a connection region on an upper surface of one end of the second frame. A second connector electrically connected, and a connector made of metal;
A second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector and has conductivity within the sealing member;
A third conductive bonding material having conductivity and bonding between the second bonding portion of the connector and the connection region on the upper surface of the second frame with the sealing member M; ,
In a middle region of a lower surface between the first bonding portion and the second bonding portion of the connector, the second conductive bonding material is provided between the first bonding portion and the upper electrode of the semiconductor chip. An oxide film of the metal is formed to prevent the metal from leaking and spreading to the intermediate region.
The oxide film is formed by irradiating the metal constituting the connector with a laser.

In the semiconductor device,
The metal constituting the connector is copper,
The oxide film is a copper oxide film.

In the semiconductor device,
The first conductive bonding material, the second conductive bonding material, and the third conductive bonding material are solder materials.

In the semiconductor device,
The oxide film,
The intermediate region on the lower surface of the connector is formed continuously over both ends in a second direction orthogonal to the first direction.

In the semiconductor device,
The oxide film is formed at least in a portion of the lower surface of the connector near the first junction in the intermediate region.

In the semiconductor device,
The connector is
A first inclined portion having one end connected to the first joint portion and inclined upward from the first joint portion;
An intermediate portion having one end connected to the other end of the first inclined portion;
A second inclined portion having one end connected to the other end of the intermediate portion, the other end joined to the second joint portion, and inclined downward from the intermediate portion toward the second joint portion;
The intermediate region on the lower surface of the connector,
A lower surface of the first inclined portion, a lower surface of the intermediate portion, and a lower surface of the second inclined portion.

In the semiconductor device,
The oxide film,
It is characterized in that it is formed over the entire lower surface of the first inclined portion.

In the semiconductor device,
The oxide film,
It is formed over the entire lower surface of the first inclined portion and the intermediate portion.

In the semiconductor device,
The oxide film,
A plurality of the lower surfaces of the first inclined portion are formed continuously over both ends in the second direction.

In the semiconductor device,
The oxide film,
The outer surface of the connector is formed by laser irradiation on a surface of a region corresponding to the intermediate region of the connector before the outer shape of the connector is punched out by a molding press.

In the semiconductor device,
The oxide film,
It is characterized by being formed by laser irradiation on the surface of a region corresponding to the intermediate region of the connector in the metal plate after the outer shape of the connector has been punched out by a molding press.

In the semiconductor device,
In the sealing member, the height of the upper surface of the one end of the first frame is the same as the height of the upper surface of the one end of the second frame.

In the semiconductor device,
The vertical thickness of the connector is smaller than the vertical thickness of the first and second frames.

In the semiconductor device,
In a region near the one end of the first frame, when the lower electrode of the semiconductor chip is bonded to the mounting region of the first frame, the first conductive bonding material is provided in the first frame. A groove for preventing the frame from flowing toward the other end is formed.

A method for manufacturing a semiconductor device according to an embodiment of the present invention includes:
A sealing member, a semiconductor chip sealed by the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; and a semiconductor chip arranged to extend in a first direction. A first frame having one end portion sealed by the sealing member, a mounting region on the upper surface of the one end portion where the semiconductor chip is arranged, and the other end portion exposed from the sealing member; A first conductive bonding material having conductivity and bonding between the lower electrode of the semiconductor chip and a mounting region on an upper surface of the first frame with the sealing member M; A second frame having a connection region on an upper surface of one end portion sealed by the sealing member M, and a second end portion exposed from the sealing member M. , Disposed above the semiconductor chip within the sealing member and A first bonding portion electrically connected to the upper electrode of the chip, and a second bonding portion electrically connected to the connection region on the upper surface of one end of the second frame; And a second conductive bonding material having conductivity and bonding between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member, In the sealing member M, a third conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame and has conductivity. A method for manufacturing a semiconductor device comprising:
In a middle region of a lower surface between the first bonding portion and the second bonding portion of the connector, the second conductive bonding material is provided between the first bonding portion and the upper electrode of the semiconductor chip. An oxide film of the metal for suppressing leakage from spreading to the intermediate region from between is formed by irradiating the metal constituting the connector with a laser.

  A semiconductor device according to one embodiment of the present invention includes a semiconductor chip including a sealing member, an upper electrode sealed on the sealing member and provided on an upper surface, and a lower electrode provided on a lower surface. One end portion is sealed by a sealing member, and has a mounting area on the upper surface of the one end portion where the semiconductor chip is arranged, and the other end portion is exposed from the sealing member. A first conductive bonding material having a conductive property, which bonds between the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame within the sealing member; A second frame having a connection region on an upper surface of one end portion sealed by a sealing member, the other end portion being exposed from the sealing member; It is arranged above the semiconductor chip in the member and is electrically connected to the upper electrode of the semiconductor chip. A first joint portion, a second joint portion electrically connected to a connection region on the upper surface of one end of the second frame, and a connector made of metal, and A second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector and has conductivity; and a second bonding portion of the connection portion and the second bonding portion of the second bonding portion within the sealing member. A third conductive bonding material that is bonded to the connection region on the upper surface of the frame and has conductivity.

  Then, in the intermediate region on the lower surface between the first junction and the second junction of the connector, a second conductive bonding material is provided between the first junction and the upper electrode of the semiconductor chip. A metal oxide film is formed to prevent the metal from leaking and spreading, and the oxide film is formed by irradiating the metal constituting the connector with a laser.

  In this manner, the connector is burned by the laser irradiation on the intermediate region on the lower surface between the first joint and the second joint of the connector, that is, an oxide film is formed on the intermediate region of the connector. Therefore, the solder material does not spread and spread due to the oxide film in the intermediate region.

  Thus, according to the semiconductor device of the present invention, it is possible to suppress the spread of the solder material to the connector at the time of joining, and to improve the reliability of the semiconductor chip.

FIG. 1A is a top view illustrating an example of a configuration of the semiconductor device 100 according to the first embodiment. FIG. 1B is a side view illustrating an example of the configuration of the semiconductor device 100 illustrated in FIG. 1A according to the first embodiment. FIG. 2A is a top view illustrating an example of the appearance of the metal plate P after laser irradiation before processing the connector S of the semiconductor device 100 in the method for manufacturing the semiconductor device 100 according to the first embodiment. FIG. 2B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 2A. FIG. 2C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 2A. FIG. 2D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 2B and 2C. FIG. 3A is a top view illustrating an example of the appearance of the metal plate P after laser irradiation before processing the connector S of the semiconductor device 100 in the method of manufacturing the semiconductor device 100 according to the second embodiment. FIG. 3B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 3A. FIG. 3C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 3A. FIG. 3D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 3B and 3C. FIG. 4A is a top view illustrating an example of the appearance of the metal plate P after laser irradiation before processing the connector S of the semiconductor device 100 in the method of manufacturing the semiconductor device 100 according to the third embodiment. FIG. 4B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 4A. FIG. 4C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 4A. FIG. 4D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 4B and 4C. FIG. 5A is a side view showing an example of a configuration focusing on a region near a connector of a conventional semiconductor device. FIG. 5B is a perspective view showing an example of a configuration focusing on a region near a connector of the conventional semiconductor device shown in FIG. 5A.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1A is a top view illustrating an example of a configuration of the semiconductor device 100 according to the first embodiment. FIG. 1B is a side view illustrating an example of the configuration of the semiconductor device 100 illustrated in FIG. 1A according to the first embodiment.

  1A and 1B, the sealing member M is shown in a see-through manner.

The semiconductor device 100 according to the first embodiment includes, for example, as illustrated in FIGS. 1A and 1B, a sealing member M, a semiconductor chip X, a first frame F1, a second frame F2, and a first frame F1. It includes a conductive bonding material Z1, a second conductive bonding material Z2, a third conductive bonding material Z3, and a connector S.
The sealing member M is, for example, a sealing resin such as an epoxy resin.

  As shown in FIGS. 1A and 1B, for example, the sealing member M includes a semiconductor chip X, one end F1a of a first frame F1, one end F2a of a second frame F2, and a first conductive bonding material. Z1, the second conductive bonding material Z2, the third conductive bonding material Z3, and the connector S are sealed.

  1A and 1B, the semiconductor chip X is sealed with a sealing member M, and has an upper electrode X2 provided on an upper surface and a lower electrode X1 provided on a lower surface.

  The semiconductor chip X is, for example, a diode. In this case, for example, the anode of the diode corresponds to the upper electrode X2, and the cathode of the diode corresponds to the lower electrode X1, but the relationship may be reversed.

  Further, the semiconductor chip X may be applied to a semiconductor element other than the diode described above.

  The first frame F1 is disposed so as to extend in the first direction D1, for example, as shown in FIGS. 1A and 1B.

  The first frame F1 has one end F1a sealed by a sealing member M, and has a mounting area on the upper surface of the one end F1a where the semiconductor chip X is arranged.

  In the first frame F1, the other end F1b is exposed (projects) from the sealing member M.

  Further, the first conductive bonding material Z1 is configured to bond between the lower electrode X1 of the semiconductor chip X and the mounting region on the upper surface of the first frame F1 in the sealing member M.

  This first conductive bonding material Z1 has conductivity. The first conductive bonding material Z1 is, for example, a solder material.

  Here, for example, as shown in FIG. 1A, a region close to one end F1a of the first frame F1 is provided with a lower electrode X1 of the semiconductor chip X and a mounting region of the first frame F1. A groove F1k is formed to prevent the one conductive bonding material Z1 from flowing toward the other end F1b of the first frame F1.

  The second frame F2 is arranged to extend in the first direction D1, has a connection region on the upper surface of one end F2a sealed by the sealing member M, and has the other end. It is exposed from the sealing member M.

  The connector S is disposed above the semiconductor chip X in the sealing member M, for example, as shown in FIGS. 1A and 1B.

  The connector S includes, for example, as shown in FIGS. 1A and 1B, a first joining portion Sa, a first inclined portion Sb, an intermediate portion Sc, a second inclined portion Sd, and a second joining portion Se. ,including.

  Then, the first bonding portion Sa is electrically connected to the upper electrode X2 of the semiconductor chip X by the second conductive bonding material Z2.

  Further, the second joint Se is electrically connected to the connection region on the upper surface of the one end F2a of the second frame F2 by the third conductive joining material Z3.

  Further, the first inclined portion Sb has one end connected to the first joining portion Sa and is inclined upward from the first joining portion Sa.

  One end of the intermediate portion Sc is connected to the other end of the first inclined portion Sb.

  The second inclined portion Sd has one end connected to the other end of the intermediate portion Sc, and the other end joined to the second joint Se. The second inclined portion Sd is inclined downward from the intermediate portion Sc toward the second joint Se.

  The above-described intermediate region on the lower surface of the connector S includes the lower surface of the first inclined portion Sb, the lower surface of the intermediate portion Sc, and the lower surface of the second inclined portion Sd.

  Here, for example, as shown in FIG. 1B, the second conductive bonding material Z2 is provided in the intermediate region on the lower surface between the first bonding portion Sa and the second bonding portion Se of the connector S by the first conductive bonding material Z2. A metal oxide film L1 is formed to suppress the leakage from the junction Sa and the upper electrode X2 of the semiconductor chip to the intermediate region. The oxide film L1 is formed by irradiating the metal constituting the connector S with a laser.

  The metal constituting the connector S is, for example, copper. In this case, the oxide film L1 is a copper oxide film.

  The oxide film L1 is continuously formed, for example, over both ends in a second direction D2 (width direction) orthogonal to the first direction D1 in an intermediate region on the lower surface of the connector S.

  The oxide film L1 is formed, for example, at least in a portion close to the first bonding portion Sa in an intermediate region on the lower surface of the connector S, as shown in FIG. 1B.

  The oxide film L1 is formed over the entire lower surface of the first inclined portion Sb, for example, as shown in FIG. 1B.

  In particular, for example, as shown in FIG. 1B, the oxide film L1 is formed over the entire lower surface of the first inclined portion Sb and the intermediate portion Sc.

  The oxide film L1 is formed by, for example, irradiating the surface of a region of the metal plate corresponding to the intermediate region of the connector S with a laser beam before the outer shape of the connector S is punched out by a molding press. Is also good.

  The oxide film L1 is formed by, for example, irradiating the surface of a region corresponding to the intermediate region of the connector S in the metal plate after the outer shape of the connector S is punched out by a molding press with laser. You may.

  Further, the second conductive bonding material Z2 is configured to bond between the upper electrode X2 of the semiconductor chip X and the first bonding portion Sa of the connector S in the sealing member M.

  This second conductive bonding material Z2 has conductivity. The second conductive bonding material Z2 is, for example, a solder material.

  Further, the third conductive bonding material Z3 is configured to bond between the second bonding portion Se of the connector S and the connection region on the upper surface of the second frame F2 in the sealing member M. .

  This third conductive bonding material Z3 has conductivity. The third conductive bonding material Z3 is, for example, a solder material.

  Here, the connector S is made of, for example, a metal. More specifically, the connector S is made of copper.

  The thickness of the connector S in the vertical direction is set to be smaller than, for example, the thickness of the first and second frames F1 and F2 in the vertical direction.

  The width of the first joining portion Sa of the connector S in the second direction D2 orthogonal to the first direction D1 is, for example, as shown in FIGS. 1A and 1B, the semiconductor chip in the second direction D2. The width is set to be smaller than the width of the upper electrode X2 of X.

  Further, the width of the first joining portion Sa of the connector S in the second direction D2 is smaller than the width of the upper surface of the semiconductor chip X in the second direction D2, for example, as shown in FIGS. 1A and 1B. It is set to be.

Note that, for example, the first joint portion Sa of the connector S is provided with a protruding portion (not shown) projecting downward by forming the center of the first joint portion Sa of the connector S downward. May be. In this case, the protruding portion (not shown) is electrically connected to the upper surface of the upper electrode X2 of the semiconductor chip X in the sealing member M via the second conductive bonding material Z2.
Further, the area of the first joint Sa of the connector S may be set to be larger than the area of the upper surface of the upper electrode X2 of the semiconductor chip X, for example.

The width of the first joint Sa of the connector S in the second direction D2 is set to be larger than, for example, the width of the mounting area of the one end F1a of the first frame F1 in the second direction D2. It may be set.
In the sealing member M, for example, as shown in FIGS. 1A and 1B, the height of the upper surface of the one end F1a of the first frame F1 is equal to the height of the upper surface of the one end F2a of the second frame F2. Is set to be the same as

  Here, an example of a method for manufacturing a semiconductor device having the above configuration will be briefly described, focusing on the configuration of the connector S.

  FIG. 2A is a top view illustrating an example of the appearance of the metal plate P after laser irradiation before processing the connector S of the semiconductor device in the method for manufacturing the semiconductor device according to the first embodiment. FIG. 2B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 2A. FIG. 2C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 2A. FIG. 2D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 2B and 2C.

As described above, the semiconductor device 100 includes the sealing member M, the semiconductor chip X, the first frame F1, the second frame F2, the first conductive bonding material Z1, and the second conductive material. A bonding material Z2, a third conductive bonding material Z3, and a connector S are provided (FIGS. 1A and 1B).
In the method of manufacturing the semiconductor device 100 according to the first embodiment, for example, as shown in FIGS. 2A to 2D, an intermediate region on a lower surface between the first joint Sa and the second joint Se of the connector S A metal oxide film L1 for suppressing the second conductive bonding material Z2 from spreading from the space between the first bonding portion Sa and the upper electrode X2 of the semiconductor chip X to the intermediate region constitutes the connector S. It is formed by irradiating a metal to be irradiated with a laser.

  Note that the oxide film L1 may be formed by laser irradiation on the surface of the metal plate P before the outer shape of the connector S is punched out by a molding press, in a region corresponding to the intermediate region of the connector S ( (FIG. 2A).

  Further, the oxide film L1 may be formed by irradiating the surface of a region of the metal plate P corresponding to the intermediate region of the connector S on the metal plate P after the outer shape of the connector S has been punched out by a molding press. .

  As described above, the semiconductor device according to the first embodiment includes a semiconductor chip including the sealing member M, the upper electrode provided on the upper surface, and the lower electrode provided on the lower surface, which is sealed by the sealing member. X, and are arranged so as to extend in the first direction, one end is sealed by a sealing member, and a mounting area on a top surface of the one end where a semiconductor chip is arranged; Is connected between the first frame F1 exposed from the sealing member and the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame in the sealing member, and has a first conductive property. And a connection region disposed on the upper surface of one end sealed by the sealing member, and the other end exposed from the sealing member. A second frame F2 and a semiconductor chip disposed above the semiconductor chip within the sealing member. A connection made of metal, having a first joint Sa electrically connected to the upper electrode and a second joint Se electrically connected to a connection region on the upper surface of one end of the second frame. A second conductive bonding material having a conductive property and bonding between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member; And a third conductive bonding material having conductivity and bonding between the second bonding portion of the child and the connection region on the upper surface of the second frame.

  Then, in the intermediate region on the lower surface between the first junction and the second junction of the connector, a second conductive bonding material is provided between the first junction and the upper electrode of the semiconductor chip. A metal oxide film L1 is formed to prevent the metal from leaking and spreading. The oxide film L1 is formed by irradiating a metal constituting a connector with a laser.

  As described above, the laser is applied to the intermediate region on the lower surface between the first joint Sa and the second joint Se of the connector S, thereby burning the connector, that is, the oxide film L1 on the intermediate region of the connector. Is formed, the solder material does not spread and spread due to the oxide film L1 in the intermediate region.

  That is, according to the semiconductor device of the present embodiment, it is possible to suppress the spread of the solder material to the connector at the time of joining, and to improve the reliability of the semiconductor chip.

  In the above-described first embodiment, an example of a configuration and an example of a manufacturing method in which the spread of the solder material to the connectors during the joining of the semiconductor device 100 is described. In a second embodiment, another example of the manufacturing method for suppressing the spread of the solder material to the connector at the time of joining the semiconductor device will be described.

  FIG. 3A is a top view illustrating an example of an appearance of a metal plate P after laser irradiation before processing into a connector S of the semiconductor device in the method for manufacturing a semiconductor device according to the second embodiment. FIG. 3B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 3A. FIG. 3C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 3A. FIG. 3D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 3B and 3C.

  In the second embodiment, instead of the oxide film L1 of the first embodiment, as shown in FIGS. 3A to 3D, an intermediate region on the lower surface between the first joint Sa and the second joint Se of the connector S. A metal oxide film L2 for preventing the second conductive bonding material Z2 from leaking and spreading from between the first bonding portion Sa and the upper electrode X2 of the semiconductor chip X to the intermediate region constitutes the connector S. It is formed by irradiating a metal to be irradiated with a laser.

  Here, for example, as shown in FIGS. 3A to 3D, the oxide film L2 is formed over the entire lower surface of the first inclined portion Sb and the intermediate portion Sc of the connector S.

  Other configurations of the semiconductor device according to the second embodiment are the same as those of the first embodiment.

  That is, in the semiconductor device according to the second embodiment, as in the first embodiment, the second conductive bonding material is provided in an intermediate region on the lower surface between the first bonding portion and the second bonding portion of the connector. A metal oxide film is formed to prevent the metal from leaking and spreading to the intermediate region from between the first junction and the upper electrode of the semiconductor chip, and the oxide film is formed by irradiating the metal constituting the connector with laser. Have been.

  As a result, the semiconductor device according to the second embodiment burns out the connector by irradiating the laser to the intermediate region on the lower surface between the first joint and the second joint of the connector, as in the first embodiment. That is, since the oxide film is formed in the intermediate region of the connector, the solder material does not spread due to the oxide film in the intermediate region.

  That is, according to the semiconductor device of the second embodiment, the spread of the solder material to the connector at the time of joining can be suppressed, and the reliability of the semiconductor chip can be improved.

  In the second embodiment described above, another example of the manufacturing method for suppressing the spread of the solder material to the connector at the time of joining the semiconductor device has been described. Third Embodiment In a third embodiment, still another example of the manufacturing method for suppressing the spread of the solder material to the connector at the time of joining the semiconductor device will be described.

  FIG. 4A is a top view illustrating an example of the appearance of the metal plate P after laser irradiation before processing the connector S of the semiconductor device in the method for manufacturing a semiconductor device according to the third embodiment. 4B is a top view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 4A. FIG. 4C is a side view showing an example of the appearance of the metal plate P after the outer shape of the connector S has been punched out by the molding press after the step shown in FIG. 4A. FIG. 4D is a side view showing an example of the appearance of the connector S separated from the metal plate P after the steps shown in FIGS. 4B and 4C.

  In the third embodiment, instead of the oxide film L1 of the first embodiment, as shown in FIGS. 4A to 4D, an intermediate region on the lower surface between the first joint Sa and the second joint Se of the connector S. The metal oxide films L3a and L3b that prevent the second conductive bonding material Z2 from leaking from the space between the first bonding portion Sa and the upper electrode X2 of the semiconductor chip X to the intermediate region are connected to the connector S. Is formed by irradiating the metal constituting laser with laser.

  Here, for example, as shown in FIGS. 4A and 4B, a plurality of oxide films L3a and L3b are provided across the lower surface of the first inclined portion Sb in the second direction D2 (two in the example of FIG. 4). It may be formed continuously.

  Other configurations of the semiconductor device according to the third embodiment are the same as those of the first embodiment.

  That is, in the semiconductor device according to the third embodiment, as in the first embodiment, the second conductive bonding material is provided in an intermediate region on the lower surface between the first bonding portion and the second bonding portion of the connector. A metal oxide film is formed to prevent the metal from leaking and spreading to the intermediate region from between the first junction and the upper electrode of the semiconductor chip, and the oxide film is formed by irradiating the metal constituting the connector with laser. Have been.

  As a result, the semiconductor device according to the third embodiment burns out the connector by irradiating the laser to the intermediate region on the lower surface between the first joint and the second joint of the connector, as in the first embodiment. That is, since the oxide film is formed in the intermediate region of the connector, the solder material does not spread due to the oxide film in the intermediate region.

  That is, according to the semiconductor device of the third embodiment, it is possible to suppress the spread of the solder material to the connector at the time of joining, and to improve the reliability of the semiconductor chip.

  As described above, a semiconductor device according to one embodiment of the present invention is a semiconductor chip including a sealing member, an upper electrode sealed on the sealing member, the upper electrode provided on the upper surface, and the lower electrode provided on the lower surface. And one end is sealed by a sealing member, and has a mounting area on the upper surface of one end where the semiconductor chip is arranged, and the other end has A first conductive joint that has conductivity between the first frame exposed from the sealing member and the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame within the sealing member; A second member, which is disposed so as to extend in the first direction, has a connection region on the upper surface of one end sealed by the sealing member, and has the other end exposed from the sealing member. A frame disposed above the semiconductor chip in the sealing member, A first connector electrically connected to the first frame, a second connector electrically connected to a connection region on an upper surface of one end of the second frame, and a connector made of metal; A second conductive bonding material for bonding between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the stopper member, and a second bonding of the connector in the sealing member; And a third conductive bonding material having conductivity and bonding between the portion and the connection region on the upper surface of the second frame.

  Then, in the intermediate region on the lower surface between the first junction and the second junction of the connector, a second conductive bonding material is provided between the first junction and the upper electrode of the semiconductor chip. An oxide film of a metal is formed to prevent the metal from leaking and spreading. The oxide film is formed by irradiating the metal constituting the connector with laser.

  In this manner, the connector is burned by the laser irradiation on the intermediate region on the lower surface between the first joint and the second joint of the connector, that is, an oxide film is formed on the intermediate region of the connector. Therefore, the solder material does not spread and spread due to the oxide film in the intermediate region.

  Thus, according to the semiconductor device of the present invention, it is possible to suppress the spread of the solder material to the connector at the time of joining, and to improve the reliability of the semiconductor chip.

  While some embodiments of the invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. These embodiments can be implemented in other various forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the invention described in the claims and equivalents thereof.

Reference Signs List 100 semiconductor device M sealing member X semiconductor chip F1 first frame F2 second frame Z1 first conductive bonding material Z2 second conductive bonding material Z3 third conductive bonding material S connector Sa first Joining part Sb First inclined part Sc Middle part Sd Second inclined part
Se 2nd joint
F1k groove

Claims (15)

A sealing member;
A semiconductor chip having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface, which is sealed by the sealing member,
One end portion is sealed by the sealing member, and has a mounting area on the upper surface of the one end portion where the semiconductor chip is arranged; and the other end portion is arranged so as to extend in the first direction. A first frame exposed from the sealing member,
Within the sealing member, a first conductive bonding material that has a conductive property by bonding between the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame;
A second region that is arranged to extend in the first direction, has a connection region on an upper surface of one end portion sealed by the sealing member, and has the other end portion exposed from the sealing member. Frame and
A first bonding portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; and a connection region on an upper surface of one end of the second frame. A second connector electrically connected, and a connector made of metal;
A second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector and has conductivity within the sealing member;
A third conductive bonding material that has a conductive property by bonding between the second bonding portion of the connector and the connection region on the upper surface of the second frame with the sealing member M; ,
In a middle region of a lower surface between the first bonding portion and the second bonding portion of the connector, the second conductive bonding material is provided between the first bonding portion and the upper electrode of the semiconductor chip. An oxide film of the metal is formed to prevent the metal from leaking and spreading to the intermediate region.
The semiconductor device, wherein the oxide film is formed by irradiating the metal constituting the connector with a laser. The metal constituting the connector is copper,
The semiconductor device according to claim 1, wherein the oxide film is a copper oxide film. The semiconductor device according to claim 2, wherein the first conductive bonding material, the second conductive bonding material, and the third conductive bonding material are solder materials. The oxide film,
4. The semiconductor device according to claim 3, wherein the semiconductor device is formed continuously over both ends in a second direction orthogonal to the first direction of the intermediate region on the lower surface of the connector. 5. The semiconductor device according to claim 4, wherein the oxide film is formed at least in a portion of the lower surface of the connector near the first junction in the intermediate region. The connector is
A first inclined portion having one end connected to the first joint portion and inclined upward from the first joint portion;
An intermediate portion having one end connected to the other end of the first inclined portion;
A second inclined portion having one end connected to the other end of the intermediate portion, the other end joined to the second joint portion, and inclined downward from the intermediate portion toward the second joint portion;
The intermediate region on the lower surface of the connector,
The semiconductor device according to claim 5, further comprising a lower surface of the first inclined portion, a lower surface of the intermediate portion, and a lower surface of the second inclined portion. The oxide film,
The semiconductor device according to claim 6, wherein the semiconductor device is formed over the entire lower surface of the first inclined portion. The oxide film,
7. The semiconductor device according to claim 6, wherein the semiconductor device is formed over the entire lower surface of the first inclined portion and the intermediate portion. The oxide film,
7. The semiconductor device according to claim 6, wherein a plurality of the lower surfaces of the first inclined portion are formed continuously over both ends in the second direction. The oxide film,
It is formed by laser irradiation on a surface of a region of the metal plate corresponding to the intermediate region of the connector before the outer shape of the connector is punched out by a molding press. The method according to claim 4, wherein: Semiconductor device. The oxide film,
The metal plate after the outer shape of the connector is punched out by a molding press is formed by laser irradiation on a surface of a region corresponding to the intermediate region of the connector. Semiconductor device. The height of the upper surface of the one end of the first frame in the sealing member is the same as the height of the upper surface of the one end of the second frame. 10. The semiconductor device according to claim 9. The semiconductor device according to claim 12, wherein a thickness of the connector in a vertical direction is smaller than a thickness of the first and second frames in a vertical direction. In a region near the one end of the first frame, when the lower electrode of the semiconductor chip is bonded to the mounting region of the first frame, the first conductive bonding material is provided in the first frame. The semiconductor device according to claim 13, wherein a groove for preventing the frame from flowing toward the other end is formed. A sealing member, a semiconductor chip sealed by the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; and a semiconductor chip arranged to extend in a first direction. A first frame having one end portion sealed by the sealing member, a mounting region on the upper surface of the one end portion where the semiconductor chip is arranged, and the other end portion exposed from the sealing member; A first conductive bonding material having conductivity and bonding between the lower electrode of the semiconductor chip and a mounting region on an upper surface of the first frame with the sealing member M; A second frame having a connection region on an upper surface of one end portion sealed by the sealing member M, and a second end portion exposed from the sealing member M. , Disposed above the semiconductor chip within the sealing member and A first bonding portion electrically connected to the upper electrode of the chip, and a second bonding portion electrically connected to the connection region on the upper surface of one end of the second frame; And a second conductive bonding material having conductivity and bonding between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member, In the sealing member M, a third conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame and has conductivity. A method for manufacturing a semiconductor device comprising:
In a middle region of a lower surface between the first bonding portion and the second bonding portion of the connector, the second conductive bonding material is provided between the first bonding portion and the upper electrode of the semiconductor chip. A method for manufacturing a semiconductor device, comprising forming an oxide film of the metal, which suppresses the leakage from the intermediate region to the intermediate region, by irradiating the metal constituting the connector with a laser.

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