JP7175643B2 - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

2. Description of the Related Art Conventionally, there is a semiconductor device that includes a semiconductor chip that is sealed with a sealing member and has electrodes that are electrically connected to a frame via connectors (see, for example, Patent Document 1).

Here, for example, in a conventional semiconductor device, the area of a joint portion (terrace) of a connector connected to an electrode of a semiconductor chip is approximately the same size as the area of the upper surface of the electrode of the semiconductor chip.

As described above, when the area of the joint portion of the connector is approximately the same size as the area of the upper surface of the electrode of the semiconductor chip, there is a problem that the heat generated from the semiconductor chip cannot be sufficiently radiated from the connector. be.

JP 2003-133497

Accordingly, it is an object of the present invention to provide a semiconductor device capable of improving the heat dissipation of the semiconductor chip by making the area of the joint portion of the connector larger than the area of the upper surface of the electrode of the semiconductor chip to be connected. aim.

A semiconductor device according to an embodiment of an aspect of the present invention comprises:
a sealing member;
a semiconductor chip sealed by the sealing member and having an upper electrode provided on the upper surface and a lower electrode provided on the lower surface;
arranged to extend in a first direction, one end is sealed by the sealing member, a mounting region is provided on an upper surface of the one end for placing the semiconductor chip thereon, and the other end is is exposed from the sealing member; and
a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and a mounting region on the upper surface of the first frame in the sealing member and has conductivity;
A second semiconductor device arranged to extend in the first direction, having a connection region on an upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member a frame;
a first joint portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; and the connection region on an upper surface of one end portion of the second frame. a connector made of metal, having a second joint portion electrically connected;
a second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member and has conductivity;
a third conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member and has electrical conductivity; ,
The first joint portion of the connector is provided with a projecting portion that projects downward and is formed by projecting the center of the first joint portion of the connector downward, and the projecting portion is the sealing member. electrically connected to the upper surface of the upper electrode of the semiconductor chip via the second conductive bonding material,
The area of the first joint portion of the connector is larger than the area of the upper surface of the upper electrode of the semiconductor chip.

In the semiconductor device,
A width of the first joint portion of the connector in a second direction perpendicular to the first direction is larger than a width of the upper electrode of the semiconductor chip in the second direction. .

In the semiconductor device,
The width of the first joint portion of the connector in the second direction is larger than the width of the upper surface of the semiconductor chip in the second direction.

In the semiconductor device,
The width of the first joint portion of the connector in the second direction is larger than the width of the mounting area of the one end portion of the first frame in the second direction.

In the semiconductor device,
A through hole is formed in the first joint portion of the connector so as to be close to the protruding portion and penetrate the first joint portion in a vertical direction.

In the semiconductor device, the first joint portion of the connector is formed with a through-hole that is in contact with the surface of the projecting portion and vertically penetrates the first joint portion.

In the semiconductor device,
The through-hole is characterized by mold-locking the sealing member.

In the semiconductor device,
The upper surface of the first joint portion of the connector has a rectangular shape, and the four through-holes are arranged in the first joint portion corresponding to the four corners of the first joint portion, respectively. It is characterized by being

In the semiconductor device,
A recessed notch portion is formed in a side surface of the first joint portion of the connector so as to be connected in the vertical direction.

In the semiconductor device,
The width of the connector in the second direction is the same from the first joint portion to the second joint portion.

In the semiconductor device,
Within the sealing member,
The height of the upper surface of the one end of the first frame is the same as the height of the upper surface of the one end of the second frame, and the connector is the first joint and the second joint. and a sloping portion that slopes downward from the first joint portion toward the second joint portion.

In the semiconductor device, the thickness of the connector in the vertical direction is thinner than the thickness of the first and second frames in the vertical direction.

In the semiconductor device,
The connector is characterized by being made of copper.

In the semiconductor device,
In a region adjacent to the one end portion of the first frame, the first conductive bonding material is applied to the first conductive bonding material when bonding the lower electrode of the semiconductor chip and the mounting region of the first frame. A groove is formed to prevent flow to the other end side of the frame of
It is characterized by

A method for manufacturing a semiconductor device according to an embodiment of an aspect of the present invention includes:
a sealing member; a semiconductor chip sealed by the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; a first frame having one end sealed by the sealing member, having a mounting region on which the semiconductor chip is arranged on the upper surface of the one end, and having the other end exposed from the sealing member; a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and a mounting region on the upper surface of the first frame in the sealing member and has conductivity; a second frame arranged to extend in a direction, having a connection region on an upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member; a first joint portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; a connector made of metal; and a connector between the upper electrode of the semiconductor chip and the first connector of the connector within the sealing member. a second conductive bonding material that bonds and has conductivity, and bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member; and a third conductive bonding material having conductivity, and a method for manufacturing a semiconductor device,
forming a protruding portion in the first joint portion of the connector that protrudes downward by projecting the center of the first joint portion of the connector downward;
electrically connecting the projecting portion to the upper surface of the upper electrode of the semiconductor chip via the second conductive bonding material;
The area of the first joint portion of the connector is larger than the area of the upper surface of the upper electrode of the semiconductor chip.

A semiconductor device according to an aspect of the present invention includes a sealing member, a semiconductor chip sealed with the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; one end is sealed with a sealing member, has a mounting area on the upper surface of one end where a semiconductor chip is arranged, and the other end is exposed from the sealing member a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame in the sealing member and has electrical conductivity; a second frame arranged to extend in the direction of and having a connection area on an upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member; A joint portion is disposed above the semiconductor chip and electrically connected to an upper electrode of the semiconductor chip, and a second joint portion is electrically connected to a connection region on the upper surface of one end of the second frame within the sealing member. a second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member and has conductivity; a third conductive bonding material bonding between the second bonding portion of the connector and the connecting region on the upper surface of the second frame in the stop member and having electrical conductivity.

The first joint portion of the connector is provided with a projecting portion that projects downward and is formed by punching out the center of the first joint portion of the connector downward. is electrically connected to the upper surface of the upper electrode of the via a second conductive bonding material.

Furthermore, the area of the first joint portion of the connector is set to be larger than the area of the upper surface of the upper electrode of the semiconductor chip.

Thus, according to the semiconductor device of the present invention, the area of the joint portion of the connector is made larger than the area of the upper surface of the electrode of the semiconductor chip to be connected, thereby improving the heat dissipation of the semiconductor chip.

FIG. 1A is a top view showing an example of a configuration of a semiconductor device 100 according to Example 1. FIG. FIG. 1B is a side view showing an example of the configuration of the semiconductor device 100 shown in FIG. 1A according to the first embodiment. FIG. 2A is a top view showing an example of the configuration of a semiconductor device 200 according to the second embodiment. FIG. 2B is a side view showing an example of the configuration of the semiconductor device 200 shown in FIG. 2A according to the second embodiment. FIG. 3A is a top view showing an example of the configuration of a semiconductor device 300 according to Example 3. FIG. FIG. 3B is a side view showing an example of the configuration of the semiconductor device 300 shown in FIG. 3A according to the third embodiment. FIG. 4A is a top view showing an example of the configuration of a semiconductor device 400 according to Example 4. FIG. FIG. 4B is a side view showing an example of the configuration of the semiconductor device 400 shown in FIG. 4A according to the fourth embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment according to the present invention will be described below with reference to the drawings.

FIG. 1A is a top view showing an example of a configuration of a semiconductor device 100 according to Example 1. FIG. FIG. 1B is a side view showing an example of the configuration of the semiconductor device 100 shown in FIG. 1A according to the first embodiment.

In addition, in FIG. 1A and FIG. 1B, the sealing member M is illustrated so as to be seen through.

For example, as shown in FIGS. 1A and 1B, the semiconductor device 100 according to the first embodiment includes a sealing member M, a semiconductor chip X, a first frame F1, a second frame F2, and a first A conductive bonding material Z1, a second conductive bonding material Z2, a third conductive bonding material Z3, and a connector S are provided.
The sealing member M is, for example, sealing resin such as epoxy resin.

1A and 1B, the sealing member M includes, for example, a semiconductor chip X, one end portion F1a of the first frame F1, one end portion F2a of the second frame F2, and a first conductive bonding material. Z1, the second conductive bonding material Z2, the third conductive bonding material Z3, and the joint S are sealed.

1A and 1B, the semiconductor chip X is sealed with a sealing member M and has an upper electrode X2 provided on the upper surface and a lower electrode X1 provided on the lower surface.

This semiconductor chip X is, for example, a diode. In this case, for example, the anode of the diode corresponds to the upper electrode X2 and the cathode of the diode corresponds to the lower electrode X1, but the relationship may be reversed.

Also, this semiconductor chip X may be applied to a semiconductor element other than the diode described above.

Also, the first frame F1 is arranged to extend in the first direction D1, for example, as shown in FIGS. 1A and 1B.

One end portion F1a of the first frame F1 is sealed with a sealing member M, and a mounting region in which the semiconductor chip X is arranged is provided on the upper surface of the one end portion F1a.

The other end F1b of the first frame F1 is exposed (protrudes) from the sealing member M. As shown in FIG.

Also, the first conductive bonding material Z1 bonds between the lower electrode X1 of the semiconductor chip X and the mounting area on the upper surface of the first frame F1 in the sealing member M. As shown in FIG.

This first conductive bonding material Z1 has conductivity. This first conductive bonding material Z1 is, for example, a solder material.

Here, for example, as shown in FIG. 1A, in a region close to one end portion F1a of the first frame F1, when the lower electrode X1 of the semiconductor chip X is bonded to the mounting region of the first frame F1, a first A groove F1k is formed to prevent one conductive bonding material Z1 from flowing toward the other end portion F1b of the first frame F1.

The second frame F2 is arranged to extend in the first direction D1, has a connection region on the upper surface of one end F2a sealed by the sealing member M, and has the other end It is exposed from the sealing member M.

The connector S is arranged above the semiconductor chip X within the sealing member M, as shown in FIGS. 1A and 1B, for example.

The connector S includes a first joint portion S1 electrically connected to the upper electrode X2 of the semiconductor chip X by a second conductive joint material Z2, and a connection region on the upper surface of one end portion F2a of the second frame F2. and a second joint S2 electrically connected by a third conductive joint material Z3.

Also, the second conductive bonding material Z2 bonds between the upper electrode X2 of the semiconductor chip X and the first bonding portion S1 of the connector S within the sealing member M. As shown in FIG.

This second conductive bonding material Z2 has conductivity. This second conductive bonding material Z2 is, for example, a solder material.

Further, the third conductive bonding material Z3 bonds between the second bonding portion S2 of the connector S and the connection region on the upper surface of the second frame F2 within the sealing member M. .

This third conductive bonding material Z3 has conductivity. This third conductive bonding material Z3 is, for example, a solder material.

Here, the connector S is made of metal, for example. More specifically, this connector S is made of copper.

The vertical thickness of the connector S is set to be thinner than the vertical thickness of the first and second frames F1 and F2, for example.

The width of the first joint portion S1 of the connector S in the second direction D2 perpendicular to the first direction D1 is, for example, the width of the semiconductor chip in the second direction D2, as shown in FIGS. 1A and 1B. It is set to be larger than the width of the X upper electrode X2.

Further, the width of the first joint portion S1 of the connector S in the second direction D2 is larger than the width of the upper surface of the semiconductor chip X in the second direction D2, as shown in FIGS. 1A and 1B, for example. is set to be

In addition, for example, as shown in FIGS. 1A and 1B , the first joint portion S1 of the connector S protrudes downward, which is formed by projecting the center of the first joint portion S1 of the connector S downward. A projecting portion Sa is provided.

The projecting portion Sa is electrically connected to the upper surface of the upper electrode X2 of the semiconductor chip X within the sealing member M via the second conductive bonding material Z2.
Furthermore, the area of the first joint portion S1 of the connector S is set to be larger than the area of the upper surface of the upper electrode X2 of the semiconductor chip X. As shown in FIG.

Note that the width of the first joint portion S1 of the connector S in the second direction D2 is, for example, as shown in FIGS. It is set to be larger than the width of the area.
The connector S includes an inclined portion S3 positioned between the first joint portion S1 and the second joint portion S2 and inclined downward from the first joint portion S1 toward the second joint portion S2. .

In the sealing member M, for example, as shown in FIGS. 1A and 1B, the height of the upper surface of the one end F1a of the first frame F1 is equal to the height of the upper surface of the one end F2a of the second frame F2. is set to be the same as

Here, an example of a method for manufacturing the semiconductor device 100 having the configuration as described above will be briefly described with attention paid to the configuration of the connector S. FIG.

As described above, the semiconductor device 100 includes the sealing member M, the semiconductor chip X, the first frame F1, the second frame F2, the first conductive bonding material Z1, and the second conductive a conductive bonding material Z2, a third conductive bonding material Z3, and a connector S.
For example, the first joint portion S1 of the connector S is formed with a protrusion Sa that protrudes downward by punching out the center of the first joint portion S1 of the connector S downward.

Then, the projecting portion Sa is electrically connected to the upper surface of the upper electrode X2 of the semiconductor chip X via the second conductive bonding material Z2.
As described above, the area of the first joint portion S1 of the connector S is set to be larger than the area of the upper surface of the upper electrode of the semiconductor chip.

As described above, in the semiconductor device according to the first embodiment, the first joint portion of the connector is provided with the projecting portion that protrudes downward and is formed by projecting the first joint portion of the connector downward. , the projecting portion is electrically connected to the upper surface of the upper electrode of the semiconductor chip through the second conductive bonding material in the sealing member.

Furthermore, the area of the first joint portion of the connector is set to be larger than the area of the upper surface of the upper electrode of the semiconductor chip.

That is, according to the semiconductor device of the present embodiment, the area of the joint portion of the connector is made larger than the area of the upper surface of the electrode of the semiconductor chip to be connected, so that the heat dissipation of the semiconductor chip can be improved.

In the above-described first embodiment, an example of the semiconductor device 100 has been described. In a second embodiment, another example of the semiconductor device will be described.

FIG. 2A is a top view showing an example of the configuration of a semiconductor device 200 according to the second embodiment. 2B is a side view showing an example of the configuration of the semiconductor device 200 shown in FIG. 2A according to the second embodiment.

In addition, in FIG. 2A and FIG. 2B, the sealing member M is illustrated so as to be seen through. In addition, in FIGS. 2A and 2B, the same reference numerals as those in FIGS. 1A and 1B indicate the same configurations as in the first embodiment.

2A and 2B, the semiconductor device 200 according to the second embodiment includes a sealing member M, a semiconductor chip X, a first frame F1, a second , a first conductive bonding material Z1, a second conductive bonding material Z2, a third conductive bonding material Z3, and a connector S.

Here, for example, as shown in FIGS. 2A and 2B, the first joint portion S1 of the connector S is formed with a through hole H that is close to the projecting portion Sa and penetrates the first joint portion S1 in the vertical direction. You can make it as it is.

In particular, in the first joint portion S1 of the connector S, for example, as shown in FIGS. 2A and 2B, a through hole H is formed that contacts the surface of the protruding portion and penetrates the first joint portion S1 in the vertical direction. You can make it as it is.

The upper surface of the first joint portion S1 of the connector S has a rectangular shape, for example, as shown in FIGS. 2A and 2B. Further, four through holes H may be arranged in the first joint portion S1 so as to correspond to four corners of the rectangle of the first joint portion S1.

The through hole H is designed to mold-lock the sealing member M. As shown in FIG.

After the through hole H is formed in the first joint portion S1 of the connector S, the center of the first joint portion S1 of the connector S is projected downward. Thus, a projecting portion Sa projecting downward is formed.

That is, with such a configuration, the resin, which is the sealing member M, enters the through hole H of the connector S at the time of sealing, thereby improving the adhesion of the sealing member M to the connector S. can be done.

Other configurations of the semiconductor device 200 according to the second embodiment are similar to those of the first embodiment.

That is, in the semiconductor device according to the second embodiment, as in the first embodiment, the first joint portion of the connector has a downward protrusion formed by punching out the center of the first joint portion of the connector downward. The protrusion is electrically connected to the upper surface of the upper electrode of the semiconductor chip within the sealing member via the second conductive bonding material.

Further, in the semiconductor device according to the second embodiment, as in the first embodiment, the area of the first joint portion of the connector is set to be larger than the area of the upper surface of the upper electrode of the semiconductor chip.

That is, according to the semiconductor device of the second embodiment, the area of the joint portion of the connector is made larger than the area of the upper surface of the electrode of the semiconductor chip to be connected, thereby improving the heat dissipation of the semiconductor chip.

In the above-described first and second embodiments, each example of the semiconductor device has been described. In the third embodiment, still another example of the semiconductor device will be described.

FIG. 3A is a top view showing an example of the configuration of a semiconductor device 300 according to Example 3. FIG. 3B is a side view showing an example of the configuration of the semiconductor device 300 shown in FIG. 3A according to the third embodiment.

In addition, in FIG. 3A and FIG. 3B, the sealing member M is illustrated so as to be seen through. In addition, in FIGS. 3A and 3B, the same reference numerals as those in FIGS. 1A and 1B above indicate configurations similar to those of the first embodiment.

As shown in FIGS. 3A and 3B, a semiconductor device 300 according to the third embodiment includes a sealing member M, a semiconductor chip X, a first frame F1, a second , a first conductive bonding material Z1, a second conductive bonding material Z2, a third conductive bonding material Z3, and a connector S.

Here, for example, as shown in FIGS. 3A and 3B , a recessed notch Sc is formed in the side surface of the first joint portion S1 of the connector S so as to connect (penetrate) in the vertical direction. You may do so.

The upper surface of the first joint portion S1 of the connector S has a rectangular shape, for example, as shown in FIGS. 3A and 3B. Further, the first joint portion S1 may have three notch portions Sc formed on three sides of the rectangle of the first joint portion S1.

With such a configuration, the resin, which is the sealing member M, enters the cutout portion Sc of the connector S at the time of sealing, so that the adhesion of the sealing member M to the connector S can be improved. can.

Other configurations of the semiconductor device 300 according to the third embodiment are similar to those of the first embodiment.

That is, in the semiconductor device according to the third embodiment, as in the first embodiment, the first joint portion of the connector has a downwardly protruding portion formed by punching out the center of the first joint portion of the connector downward. The protrusion is electrically connected to the upper surface of the upper electrode of the semiconductor chip within the sealing member via the second conductive bonding material.

Furthermore, in the semiconductor device according to the third embodiment, as in the first embodiment, the area of the first joint portion of the connector is set to be larger than the area of the upper surface of the upper electrode of the semiconductor chip.

That is, according to the semiconductor device of the third embodiment, the area of the joint portion of the connector is made larger than the area of the upper surface of the electrode of the semiconductor chip to be connected, so that the heat dissipation of the semiconductor chip can be improved.

In the above-described first to third embodiments, each example of the semiconductor device has been described. In the fourth embodiment, still another example of the semiconductor device will be described.

FIG. 4A is a top view showing an example of the configuration of a semiconductor device 400 according to Example 4. FIG. 4B is a side view showing an example of the configuration of the semiconductor device 400 shown in FIG. 4A according to the fourth embodiment.

In addition, in FIG. 4A and FIG. 4B, the sealing member M is illustrated so as to be seen through. In addition, in FIGS. 4A and 4B, the same reference numerals as those in FIGS. 1A and 1B indicate the same configurations as in the first embodiment.

A semiconductor device 400 according to the fourth embodiment includes, for example, as shown in FIGS. 4A and 4B, a sealing member M, a semiconductor chip X, a first frame F1, a second , a first conductive bonding material Z1, a second conductive bonding material Z2, a third conductive bonding material Z3, and a connector S.

Here, for example, as shown in FIGS. 4A and 4B, the width of the connector S in the second direction D2 may be the same from the first joint portion S1 to the second joint portion S2. .

With such a configuration, the heat dissipation of the semiconductor device 400 can be improved. The configuration of the connector S may be combined with the configuration of the through hole H of the connector S described in the second and third embodiments.

Other configurations of the semiconductor device 400 according to the fourth embodiment are the same as those of the first embodiment.

That is, in the semiconductor device according to the fourth embodiment, as in the first embodiment, the first joint portion of the connector has a downwardly protruding portion formed by punching out the center of the first joint portion of the connector downward. The protrusion is electrically connected to the upper surface of the upper electrode of the semiconductor chip within the sealing member via the second conductive bonding material.

Furthermore, in the semiconductor device according to the fourth embodiment, as in the first embodiment, the area of the first joint portion of the connector is set to be larger than the area of the upper surface of the upper electrode of the semiconductor chip.

That is, according to the semiconductor device of the fourth embodiment, the area of the joint portion of the connector is made larger than the area of the upper surface of the electrode of the semiconductor chip to be connected, so that the heat dissipation of the semiconductor chip can be improved.

As described above, a semiconductor device according to an aspect of the present invention includes a sealing member M, a semiconductor that is sealed by the sealing member and has an upper electrode provided on the upper surface and a lower electrode provided on the lower surface. The chip X is arranged to extend in the first direction D1, one end is sealed with a sealing member, and the top surface of the one end has a mounting region where the semiconductor chip is arranged, and the other A first frame F1 whose end is exposed from the sealing member, and a conductive first frame F1 that joins between the lower electrode of the semiconductor chip and the mounting region on the upper surface of the first frame in the sealing member. and a conductive bonding material arranged to extend in the first direction D1, having a connection region on the upper surface of one end sealed by the sealing member, and the other end from the sealing member The exposed second frame F2 and the first joint S1 are disposed above the semiconductor chip and electrically connected to the upper electrode of the semiconductor chip, and the second joint S2 is located within the encapsulant within the second frame. The connector S made of metal electrically connected to the connection region on the upper surface of one end of the semiconductor chip and the first joint portion S1 of the connector are joined in the sealing member to the upper electrode of the semiconductor chip. and a second conductive bonding material having conductivity; 3 conductive bonding materials.

The first joint portion of the connector is provided with a projecting portion that projects downward and is formed by punching out the center of the first joint portion of the connector downward. is electrically connected to the upper surface of the upper electrode of the via a second conductive bonding material.

Furthermore, the area of the first joint portion of the connector is set to be larger than the area of the upper surface of the upper electrode of the semiconductor chip.

Thus, according to the semiconductor device of the present invention, the area of the joint portion of the connector is made larger than the area of the upper surface of the electrode of the semiconductor chip to be connected, thereby improving the heat dissipation of the semiconductor chip.

While several embodiments of the invention have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and modifications can be made without departing from the scope of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, as well as the scope of the invention described in the claims and equivalents thereof.

100, 200, 300, 400 Semiconductor device M Sealing member X Semiconductor chip F1 First frame F2 Second frame Z1 First conductive bonding material Z2 Second conductive bonding material Z3 Third conductive bonding material S Connector Sa Projection Sc Notch S1 First joint S2 Second joint S3 Inclined portion F1k Groove H Through hole

Claims (14)

a sealing member;
a semiconductor chip sealed by the sealing member and having an upper electrode provided on the upper surface and a lower electrode provided on the lower surface;
arranged to extend in a first direction, one end is sealed by the sealing member, a mounting region is provided on an upper surface of the one end for placing the semiconductor chip thereon, and the other end is is exposed from the sealing member; and
a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and a mounting region on the upper surface of the first frame in the sealing member and has conductivity;
A second semiconductor device arranged to extend in the first direction, having a connection region on an upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member a frame;
a first joint portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; and the connection region on an upper surface of one end portion of the second frame. a connector made of metal, having a second joint portion electrically connected;
a second conductive bonding material that bonds between the upper electrode of the semiconductor chip and the first bonding portion of the connector in the sealing member and has conductivity;
a third conductive bonding material that bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member and has electrical conductivity; ,
The first joint portion of the connector is provided with a projecting portion that projects downward and is formed by projecting the center of the first joint portion of the connector downward, and the projecting portion is the sealing member. electrically connected to the upper surface of the upper electrode of the semiconductor chip via the second conductive bonding material,
the area of the first joint portion of the connector is larger than the area of the upper surface of the upper electrode of the semiconductor chip ;
The width of the first joint portion of the connector in the second direction perpendicular to the first direction is greater than the width of the mounting area of the one end of the first frame in the second direction. big
A semiconductor device characterized by: The width of the first joint portion of the connector in the second direction is larger than the width of the upper electrode of the semiconductor chip in the second direction. semiconductor device. 3. The semiconductor device according to claim 2, wherein the width of said first joint portion of said connector in said second direction is larger than the width of the upper surface of said semiconductor chip in said second direction. 2 . The semiconductor device according to claim 1 , wherein the first joint portion of the connector has a through hole formed in the vicinity of the projecting portion and penetrating the first joint portion in a vertical direction. . 2. The connector according to claim 1 , wherein a through hole is formed in the first joint portion of the connector, the through hole being in contact with the surface of the projecting portion and penetrating the first joint portion in a vertical direction. semiconductor device. 6. The semiconductor device according to claim 4 , wherein the through hole mold-locks the sealing member. The upper surface of the first joint portion of the connector has a rectangular shape, and the four through-holes are arranged in the first joint portion corresponding to the four corners of the first joint portion, respectively. 7. The semiconductor device according to claim 6 , wherein: 2. The semiconductor device according to claim 1 , wherein a side surface of said first joint portion of said connector is formed with a notch portion recessed so as to be connected in a vertical direction. 2. The semiconductor device according to claim 1 , wherein the width of said connector in said second direction is the same from said first joint portion to said second joint portion. Within the sealing member,
The height of the upper surface of the one end of the first frame is the same as the height of the upper surface of the one end of the second frame, and the connector is the first joint and the second joint. 10. The semiconductor device according to claim 9 , further comprising an inclined portion located between and inclined downward from said first joint portion toward said second joint portion. 2. The semiconductor device according to claim 1 , wherein the vertical thickness of said connector is thinner than the vertical thickness of said first and second frames. 12. The semiconductor device according to claim 11 , wherein said connector is made of copper. In a region adjacent to the one end portion of the first frame, the first conductive bonding material is applied to the first conductive bonding material when bonding the lower electrode of the semiconductor chip and the mounting region of the first frame. 2. The semiconductor device according to claim 1 , wherein a groove is formed to prevent the flow of the metal to the other end of the frame. a sealing member; a semiconductor chip sealed by the sealing member and having an upper electrode provided on an upper surface and a lower electrode provided on a lower surface; a first frame having one end sealed by the sealing member, having a mounting region on which the semiconductor chip is arranged on the upper surface of the one end, and having the other end exposed from the sealing member; a first conductive bonding material that bonds between the lower electrode of the semiconductor chip and a mounting region on the upper surface of the first frame in the sealing member and has conductivity; a second frame arranged to extend in a direction, having a connection region on an upper surface of one end sealed by the sealing member, and having the other end exposed from the sealing member; a first joint portion disposed above the semiconductor chip in the sealing member and electrically connected to the upper electrode of the semiconductor chip; a connector made of metal; and a connector between the upper electrode of the semiconductor chip and the first connector of the connector within the sealing member. a second conductive bonding material that bonds and has conductivity, and bonds between the second bonding portion of the connector and the connection region on the upper surface of the second frame in the sealing member; and a third conductive bonding material having conductivity, and a method for manufacturing a semiconductor device,
forming a protruding portion in the first joint portion of the connector that protrudes downward by projecting the center of the first joint portion of the connector downward;
electrically connecting the projecting portion to the upper surface of the upper electrode of the semiconductor chip via the second conductive bonding material;
the area of the first joint portion of the connector is larger than the area of the upper surface of the upper electrode of the semiconductor chip ;
The width of the first joint portion of the connector in the second direction perpendicular to the first direction is greater than the width of the mounting area of the one end of the first frame in the second direction. big
A method of manufacturing a semiconductor device, characterized by:

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