JP7184722B2 - 支持基板、支持基板の剥離方法、及び、半導体装置の製造方法 - Google Patents

支持基板、支持基板の剥離方法、及び、半導体装置の製造方法 Download PDF

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Publication number
JP7184722B2
JP7184722B2 JP2019170551A JP2019170551A JP7184722B2 JP 7184722 B2 JP7184722 B2 JP 7184722B2 JP 2019170551 A JP2019170551 A JP 2019170551A JP 2019170551 A JP2019170551 A JP 2019170551A JP 7184722 B2 JP7184722 B2 JP 7184722B2
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JP
Japan
Prior art keywords
adhesive layer
annular portion
wafer
support substrate
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019170551A
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English (en)
Japanese (ja)
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JP2021048306A (ja
JP2021048306A5 (https=
Inventor
香織 布施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2019170551A priority Critical patent/JP7184722B2/ja
Priority to US16/797,886 priority patent/US11348822B2/en
Publication of JP2021048306A publication Critical patent/JP2021048306A/ja
Publication of JP2021048306A5 publication Critical patent/JP2021048306A5/ja
Application granted granted Critical
Publication of JP7184722B2 publication Critical patent/JP7184722B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/18—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet characterized by perforations in the adhesive tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2019170551A 2019-09-19 2019-09-19 支持基板、支持基板の剥離方法、及び、半導体装置の製造方法 Active JP7184722B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019170551A JP7184722B2 (ja) 2019-09-19 2019-09-19 支持基板、支持基板の剥離方法、及び、半導体装置の製造方法
US16/797,886 US11348822B2 (en) 2019-09-19 2020-02-21 Support substrate, method for peeling off support substrate, and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019170551A JP7184722B2 (ja) 2019-09-19 2019-09-19 支持基板、支持基板の剥離方法、及び、半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2021048306A JP2021048306A (ja) 2021-03-25
JP2021048306A5 JP2021048306A5 (https=) 2021-10-14
JP7184722B2 true JP7184722B2 (ja) 2022-12-06

Family

ID=74878759

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JP2019170551A Active JP7184722B2 (ja) 2019-09-19 2019-09-19 支持基板、支持基板の剥離方法、及び、半導体装置の製造方法

Country Status (2)

Country Link
US (1) US11348822B2 (https=)
JP (1) JP7184722B2 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175628A (ja) 2012-02-27 2013-09-05 Shin Etsu Polymer Co Ltd 半導体ウェーハ用治具の剥離装置及び半導体ウェーハの取り扱い方法
JP2015173088A (ja) 2013-08-30 2015-10-01 株式会社半導体エネルギー研究所 積層体の加工装置および加工方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2764501A (en) * 1953-06-18 1956-09-25 Perri Myrtle Sangree Supply of pressure-sensitive reinforcements for paper and the like
US4609964A (en) * 1983-10-11 1986-09-02 Coronet Paper Corporation Reinforcement for magnetic recording disk
JP3242452B2 (ja) 1992-06-19 2001-12-25 三菱電機株式会社 薄膜太陽電池の製造方法
US20070048481A1 (en) * 2005-08-30 2007-03-01 Donnarose Melvin Adhesive doily
JP4922752B2 (ja) 2006-12-28 2012-04-25 東京応化工業株式会社 孔あきサポートプレート
JP2009175587A (ja) 2008-01-28 2009-08-06 Toshiba Corp 露光装置検査用マスク、その製造方法、及び露光装置検査用マスクを用いた露光装置の検査方法
JP5970986B2 (ja) 2012-07-05 2016-08-17 富士通株式会社 ウエハー基板の製造方法
JP2016146429A (ja) 2015-02-09 2016-08-12 トヨタ自動車株式会社 半導体装置の製造方法
JP6612588B2 (ja) 2015-11-06 2019-11-27 東京応化工業株式会社 支持体分離装置及び支持体分離方法
JP6615707B2 (ja) 2016-07-05 2019-12-04 信越ポリマー株式会社 サポート治具の剥離装置及び剥離方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175628A (ja) 2012-02-27 2013-09-05 Shin Etsu Polymer Co Ltd 半導体ウェーハ用治具の剥離装置及び半導体ウェーハの取り扱い方法
JP2015173088A (ja) 2013-08-30 2015-10-01 株式会社半導体エネルギー研究所 積層体の加工装置および加工方法

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US11348822B2 (en) 2022-05-31
US20210090934A1 (en) 2021-03-25
JP2021048306A (ja) 2021-03-25

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