JP7184719B2 - ＳｉＣエピタキシャルウェハ - Google Patents

ＳｉＣエピタキシャルウェハ Download PDF

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JP7184719B2
JP7184719B2 JP2019161167A JP2019161167A JP7184719B2 JP 7184719 B2 JP7184719 B2 JP 7184719B2 JP 2019161167 A JP2019161167 A JP 2019161167A JP 2019161167 A JP2019161167 A JP 2019161167A JP 7184719 B2 JP7184719 B2 JP 7184719B2
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sic
sic substrate
epitaxial layer
strip
stacking faults
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Japanese (ja)
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JP2020063186A5 (https=
JP2020063186A (ja
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禎孝 西原
宏二 亀井
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Resonac Holdings Corp
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Showa Denko KK
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP2019161167A 2019-09-04 2019-09-04 ＳｉＣエピタキシャルウェハ Active JP7184719B2 (ja)

Priority Applications (2)

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JP2019161167A JP7184719B2 (ja) 2019-09-04 2019-09-04 ＳｉＣエピタキシャルウェハ
JP2022186625A JP7396442B2 (ja) 2019-09-04 2022-11-22 ＳｉＣ基板

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JP2019161167A JP7184719B2 (ja) 2019-09-04 2019-09-04 ＳｉＣエピタキシャルウェハ

Related Parent Applications (1)

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JP2018194020A Division JP6585799B1 (ja) 2018-10-15 2018-10-15 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法

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JP2022186625A Division JP7396442B2 (ja) 2019-09-04 2022-11-22 ＳｉＣ基板

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JP2020063186A JP2020063186A (ja) 2020-04-23
JP2020063186A5 JP2020063186A5 (https=) 2021-11-18
JP7184719B2 true JP7184719B2 (ja) 2022-12-06

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JP2022186625A Active JP7396442B2 (ja) 2019-09-04 2022-11-22 ＳｉＣ基板

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7552246B2 (ja) * 2020-10-19 2024-09-18 株式会社レゾナック ＳｉＣ基板の評価方法、ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣデバイスの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012144614A1 (ja) 2011-04-21 2012-10-26 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP2015129087A (ja) 2015-02-06 2015-07-16 住友電気工業株式会社 炭化珪素基板
WO2016121628A1 (ja) 2015-01-28 2016-08-04 東レエンジニアリング株式会社 ワイドギャップ半導体基板の欠陥検査方法及び欠陥検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012144614A1 (ja) 2011-04-21 2012-10-26 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
WO2016121628A1 (ja) 2015-01-28 2016-08-04 東レエンジニアリング株式会社 ワイドギャップ半導体基板の欠陥検査方法及び欠陥検査装置
JP2015129087A (ja) 2015-02-06 2015-07-16 住友電気工業株式会社 炭化珪素基板

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JP2023016872A (ja) 2023-02-02
JP7396442B2 (ja) 2023-12-12
JP2020063186A (ja) 2020-04-23

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