JP7184547B2 - Correction method, substrate processing apparatus, and substrate processing system - Google Patents

Description

The present invention relates to a correction method, a substrate processing apparatus, and a substrate processing system.

A substrate processing apparatus for etching a substrate is known. The state of the substrate processing apparatus fluctuates due to deterioration over time of parts constituting the substrate processing apparatus, variations in the positions of parts caused by replacement of parts constituting the substrate processing apparatus, and the like. Therefore, it is necessary to appropriately correct various setting conditions of the substrate processing apparatus so that optimum etching is performed. Specifically, it is necessary to measure the film thickness of the etched substrate and correct the set conditions if the etching amount does not show the desired value. The film thickness of the substrate is measured using a film thickness measuring device (see Patent Document 1, for example).

JP 2013-134065 A

However, the correction of the setting conditions has been performed manually by the operator, spending a long time, which has been a burden on the operator.

The present invention has been made in view of the above problems, and an object thereof is to provide a correction method, a substrate processing apparatus, and a substrate processing system that can reduce the burden on workers.

A correction method of the present invention is a correction method for correcting setting conditions of a substrate processing apparatus for etching a substrate with a processing liquid before starting etching of a first substrate , wherein at least one of the execution conditions during execution of etching is corrected. an acquisition step of acquiring one execution condition and at least one feature quantity indicating the execution result of the etching; and at least one of the set conditions based on the at least one execution condition and the at least one feature quantity The method includes a generation step of generating correction data for correcting one setting condition, and a correction step of correcting the at least one setting condition by the substrate processing apparatus based on the correction data. The at least one feature quantity includes at least one of an etching amount of a second substrate etched before the first substrate and uniformity of the etching amount.

In one embodiment, in the obtaining step, the at least one execution condition and the at least one feature amount are input to a trained model generated by machine learning.

In one embodiment, the correction data is output from the trained model in the generating step.

In one embodiment, the correction method further includes a learning step of subjecting teacher information to machine learning to generate the learned model.

In one embodiment, the teacher information is information obtained when the at least one feature value exhibits an optimum value, and the at least one feature value, the at least one execution condition, and the at least one including setting conditions.

In one embodiment, the substrate processing apparatus includes a processing chamber, a first nozzle, a supply channel, a liquid receiver, a second nozzle, a fan filter unit, and an exhaust fan. The processing chamber accommodates the substrate. The first nozzle ejects a processing liquid for etching the substrate toward the substrate. The supply channel supplies the treatment liquid to the first nozzle. The liquid receiver receives the processing liquid scattered from the substrate. The second nozzle ejects gas toward the substrate. The fan filter unit directs air into the processing chamber. The exhaust fan exhausts gas from the processing chamber.

In one embodiment, the conditions for executing the etching include the temperature of the processing liquid at the tip of the first nozzle, the temperature of the gas at the tip of the second nozzle, and the flow of the processing liquid from the first nozzle. a flow rate at which the gas is ejected from the second nozzle; a timing at which the treatment liquid starts to be ejected from the first nozzle; a timing at which the gas starts to be ejected from the second nozzle; a timing at which ejection of the treatment liquid from the first nozzle is stopped, a timing at which ejection of the gas from the second nozzle is stopped, a change timing of a flow rate of the treatment liquid ejected from the first nozzle, and change timing of the flow rate of the gas ejected from the second nozzle; rise characteristics of the flow rate of the treatment liquid ejected from the first nozzle; rise characteristics of the flow rate of the gas ejected from the second nozzle; Falling characteristics of the flow rate of the processing liquid ejected from the first nozzle, falling characteristics of the flow rate of the gas ejected from the second nozzle, and whether or not the processing liquid drips from the tip of the first nozzle. concentration of the processing liquid flowing through the supply channel; and speed at which the processing liquid is sucked from the first nozzle toward the upstream side of the supply channel after the ejection of the processing liquid is stopped. a position where the sucked treatment liquid stops, a film thickness distribution of the treatment liquid covering the substrate, a position of the first nozzle, a moving speed of the first nozzle, and an acceleration of the first nozzle. , change timing of the position of the first nozzle, change timing of the moving speed of the first nozzle, information indicating whether or not the treatment liquid adheres to the liquid receiving section, and information indicating whether or not the processing liquid adheres to the liquid receiving section. the amount of the processing liquid held, the rotation speed of the substrate, the acceleration of the substrate, the change timing of the rotation speed of the substrate, the surface temperature of the substrate, the amount of eccentricity of the substrate, and the surface of the substrate A shake amount, a position of the liquid receiving part, a moving speed of the liquid receiving part, an acceleration of the liquid receiving part, a change timing of the position of the liquid receiving part, and a change timing of the moving speed of the liquid receiving part. a wind speed of the air sent into the processing chamber by the fan filter unit, a wind speed of the air sent into the processing chamber by the fan filter unit, a wind speed of the gas exhausted from the processing chamber, and a wind speed of the gas exhausted from the processing chamber. and at least one of

In one embodiment, the substrate processing apparatus includes a processing chamber, a first nozzle, a first supply channel, a circulation channel, a second supply channel, a heating section, a liquid receiving section, and a second It comprises a nozzle, a third supply channel, a fan filter unit, an exhaust fan, an exhaust duct and a valve. The processing chamber accommodates the substrate. The first nozzle ejects a processing liquid for etching the substrate toward the substrate. The first supply channel supplies the treatment liquid to the first nozzle. The circulation channel is connected to the first supply channel and circulates the processing liquid. The second supply channel supplies the processing liquid to the circulation channel. The heating unit heats the substrate. The liquid receiving part receives the processing liquid scattered from the substrate. The second nozzle ejects gas toward the substrate. The third supply channel supplies the gas to the second nozzle. The fan filter unit directs air into the processing chamber. The exhaust fan exhausts gas from the processing chamber. Gas discharged from the processing chamber flows through the exhaust duct. The valve is installed in the exhaust duct.

In one embodiment, the set conditions of the substrate processing apparatus include the temperature of the processing liquid in the circulation channel, the temperature of the processing liquid in the first supply channel, and the temperature of the gas in the third supply channel. The temperature, the concentration of the processing liquid in the circulation channel, the concentration of the processing liquid in the first supply channel, the pressure in the second supply channel, the pressure in the third supply channel, and the The pressure of the circulation channel, the flow rate of the processing liquid flowing through the circulation channel, the flow rate of the processing liquid ejected from the first nozzle, the flow rate of the gas ejected from the second nozzle, and the first Timing for generating a signal for starting ejection of the treatment liquid from the nozzles, timing for generating a signal for starting ejection of the gas from the second nozzles, and stopping ejection of the treatment liquid from the first nozzles. timing of generating a signal; timing of generating a signal for stopping the ejection of the gas from the second nozzle; timing of generating a signal for changing the flow rate of the treatment liquid ejected from the first nozzle; generation timing of a signal for changing the flow rate of the gas ejected from the first nozzle; rise characteristics of the flow rate of the treatment liquid ejected from the first nozzle; rise characteristics of the flow rate of the gas ejected from the second nozzle; A fall characteristic of the flow rate of the treatment liquid ejected from the first nozzle, a fall characteristic of the flow rate of the gas ejected from the second nozzle, and a flow rate decrease characteristic of the gas ejected from the second nozzle, and from the first nozzle to the second nozzle after the ejection of the treatment liquid is stopped. The speed at which the processing liquid is sucked toward the upstream side of the 1 supply channel, the position at which the sucked processing liquid stops, the rotation speed of the substrate, the acceleration of the substrate, and the rotation speed of the substrate. change timing, position of the first nozzle, moving speed of the first nozzle, acceleration of the first nozzle, timing of changing the position of the first nozzle, and timing of changing the moving speed of the first nozzle a temperature for heating the substrate; a position of the liquid receiving portion; a moving speed of the liquid receiving portion; an acceleration of the liquid receiving portion; timing of changing the position of the liquid receiving portion; change timing of the movement speed of the fan filter unit, the differential pressure of the valve, the wind speed of the gas exhausted from the processing chamber, the air volume of the gas exhausted from the processing chamber, and the processing and the amount of light in the room.

A substrate processing apparatus of the present invention etches a substrate with a processing liquid. The substrate processing apparatus includes a control section. The control unit controls at least one of setting conditions of the substrate processing apparatus based on at least one execution condition among the execution conditions when the etching is executed and at least one characteristic amount indicating the execution result of the etching. Correction data for correcting one setting condition is generated. The controller corrects the at least one setting condition based on the correction data before starting the etching of the first substrate . The at least one feature quantity includes at least one of an etching amount of a second substrate etched before the first substrate and uniformity of the etching amount.

The substrate processing system of this embodiment includes a substrate processing apparatus and a correction data generation apparatus. The substrate processing apparatus etches a substrate with a processing liquid. The correction data generation device outputs correction data for correcting the setting conditions of the substrate processing apparatus. The correction data generation device includes a control section. The control unit controls at least one of setting conditions of the substrate processing apparatus based on at least one execution condition among the execution conditions when the etching is executed and at least one characteristic amount indicating the execution result of the etching. Correction data for correcting one setting condition is generated. The substrate processing apparatus corrects the at least one setting condition based on the correction data before starting etching of the first substrate . The at least one feature quantity includes at least one of an etching amount of a second substrate etched before the first substrate and uniformity of the etching amount.

ADVANTAGE OF THE INVENTION According to this invention, an operator's burden can be reduced.

1 is a schematic diagram of a substrate processing apparatus according to Embodiment 1 of the present invention; FIG. 4 is a flow chart showing a substrate processing method according to Embodiment 1 of the present invention. 1 is a block diagram of a substrate processing apparatus according to Embodiment 1 of the present invention; FIG. FIG. 7 is a diagram showing an example of changes in the position and movement speed of the processing liquid nozzle during etching processing. 1 is a block diagram of a substrate processing apparatus according to Embodiment 1 of the present invention; FIG. FIG. 3 is a schematic diagram of a processing liquid supply unit according to Embodiment 1 of the present invention. FIG. 2 is a schematic diagram of a gas supply unit according to Embodiment 1 of the present invention; FIG. 3 is a schematic diagram showing a treatment liquid circulation section, a first treatment liquid component supply section, a second treatment liquid component supply section, and a treatment liquid recovery section according to Embodiment 1 of the present invention. 1 is a block diagram of a substrate processing apparatus according to Embodiment 1 of the present invention; FIG. 1 is a schematic diagram of a substrate processing system according to Embodiment 1 of the present invention; FIG. It is a figure which shows an example of the etching amount for every radial position of a processed board|substrate. 1 is a block diagram of a substrate processing apparatus according to Embodiment 1 of the present invention; FIG. 4 is a flowchart showing a correction method according to Embodiment 1 of the present invention; FIG. 4 is a schematic diagram of a trained model according to Embodiment 1 of the present invention; 4 is a flowchart showing a learning method according to Embodiment 1 of the present invention; FIG. 2 is a schematic diagram of a substrate processing system according to Embodiment 2 of the present invention;

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. It should be noted that descriptions of overlapping descriptions may be omitted as appropriate. Also, in the drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

[Embodiment 1]
A substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. FIG. 1 is a schematic diagram of a substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 supplies the processing liquid L to the substrate W and etches the substrate W with the processing liquid L. FIG. The substrate processing apparatus 100 of this embodiment is a single-wafer type apparatus that etches substrates W one by one. Moreover, in this embodiment, the substrate W is a semiconductor wafer. The substrate W is substantially disc-shaped.

As shown in FIG. 1 , the substrate processing apparatus 100 includes a box-shaped partition wall 21 , a fan filter unit (FFU) 22 and an exhaust section 23 . The partition wall 21 partitions the processing chamber 2 (chamber) in which the substrate W is accommodated.

The FFU 22 sends clean air to the processing chamber 2 from above the partition wall 21 . Specifically, the FFU 22 has an air supply fan and a filter. The FFU 22 sends the filtered air to the processing chamber 2 .

The exhaust part 23 is arranged in the lower part of the processing chamber 2 . The exhaust unit 23 exhausts the gas inside the processing chamber 2 . The FFU 22 and the exhaust unit 23 form a down flow that flows downward in the processing chamber 2 from above. Etching of the substrate W is performed in a state in which a down flow is formed in the processing chamber 2 .

The exhaust section 23 includes an exhaust fan 231 , an exhaust duct 232 and a valve 233 . The exhaust fan 231 is arranged in the exhaust duct 232 . The exhaust fan 231 exhausts gas from the processing chamber 2 . Specifically, the gas in the processing chamber 2 flows into the exhaust duct 232 by driving the exhaust fan 231 . As a result, gas exhausted from the processing chamber 2 flows through the exhaust duct 232 .

The exhaust duct 232 guides the gas to exhaust equipment provided in the factory where the substrate processing apparatus 100 is installed. Therefore, by driving the exhaust fan 231 , the gas in the processing chamber 2 is guided to the exhaust equipment through the exhaust duct 232 .

A valve 233 is installed in the exhaust duct 232 . Specifically, the valve 233 is arranged downstream of the exhaust fan 231 with respect to the direction in which the gas flows through the exhaust duct 232 . The valve 233 controls the pressure (exhaust pressure) of the gas flow path (exhaust flow path) formed by the exhaust duct 232 . Valve 233 is, for example, an auto valve.

As shown in FIG. 1 , the substrate processing apparatus 100 further includes a spin chuck 3 . The spin chuck 3 holds the substrate W horizontally. The spin chuck 3 holds the substrate W and rotates the substrate W around a rotation axis AX1 extending in the vertical direction. Specifically, the spin chuck 3 includes a spin base 31 , a plurality of chuck pins 32 , a rotating shaft 33 , a spin motor 34 and a motor encoder 35 .

The spin base 31 of this embodiment is disc-shaped. The spin base 31 is held in a horizontal posture. Each of the plurality of chuck pins 32 holds the substrate W horizontally above the spin base 31 . The rotating shaft 33 extends downward from the central portion of the spin base 31 . The spin motor 34 rotates the substrate W and the spin base 31 about the rotation axis AX1 by rotating the rotation shaft 33 in the rotation direction Dr. Motor encoder 35 generates a signal indicating the rotational speed of spin motor 34 . In other words, the motor encoder 35 produces a signal indicative of the substrate W's rotational speed.

As shown in FIG. 1 , the substrate processing apparatus 100 further includes a processing liquid nozzle 41 , a processing liquid supply pipe 42 , a nozzle arm 43 and a nozzle moving section 44 .

The processing liquid nozzle 41 ejects the processing liquid L toward the substrate W held by the spin chuck 3 . By supplying the processing liquid L to the substrate W, the substrate W is etched. The treatment liquid L is, for example, an aqueous solution containing phosphoric acid (etching component) as a main component, an aqueous solution containing hydrofluoric acid (etching component) as a main component, an aqueous solution containing nitric acid (etching component) as a main component, or hydrofluoric acid (etching component). and nitric acid (etching component), an aqueous solution containing ammonium hydroxide (etching component) as the main component, and an aqueous solution containing a mixture of ammonium hydroxide (etching component) and hydrogen peroxide (etching component). Either.

The processing liquid supply pipe 42 supplies the processing liquid L to the processing liquid nozzle 41 . The processing liquid supply pipe 42 forms a processing liquid supply channel through which the processing liquid L flows toward the processing liquid nozzle 41 .

The nozzle arm 43 supports the processing liquid nozzle 41 . Specifically, the treatment liquid nozzle 41 is attached to the tip of the nozzle arm 43 . The nozzle moving part 44 rotates the nozzle arm 43 around the rotation axis AX2 extending in the vertical direction around the spin chuck 3 . As a result, the treatment liquid nozzle 41 rotates about the rotation axis AX2. The processing liquid nozzle 41 ejects the processing liquid L toward the substrate W while rotating about the rotation axis AX2. In other words, the processing liquid nozzle 41 is a scan nozzle.

As shown in FIG. 1 , the substrate processing apparatus 100 further includes a heating section 5 . The heating unit 5 heats the substrate W. As shown in FIG. Specifically, the heating section 5 includes an infrared heater 51 , a heater arm 52 and a heater moving section 53 .

The infrared heater 51 irradiates the substrate W with infrared rays. More specifically, the infrared heater 51 has an infrared lamp 51a. The infrared lamp 51a generates infrared rays.

A heater arm 52 supports the infrared heater 51 . Specifically, the infrared heater 51 is attached to the tip of the heater arm 52 . The heater moving unit 53 rotates the heater arm 52 about a rotation axis AX3 extending vertically around the spin chuck 3 . As a result, the infrared heater 51 rotates about the rotation axis AX3. The infrared heater 51 heats the substrate W while rotating about the rotation axis AX3.

As shown in FIG. 1 , the substrate processing apparatus 100 further includes a rinse liquid supply section 6 . The rinse liquid supply unit 6 supplies the substrate W with the rinse liquid. By supplying the rinse liquid to the substrate W, the substrate W is rinsed. The rinse liquid is, for example, pure water (deionized water). The rinsing liquid is not limited to pure water, and may be carbonated water, electrolytic ion water, hydrogen water, ozone water, IPA (isopropyl alcohol), or diluted hydrochloric acid water (for example, about 10 to 100 ppm). may

Specifically, the rinse liquid supply unit 6 includes a rinse liquid nozzle 61 , a rinse liquid supply pipe 62 , and a rinse liquid valve 63 . The rinse liquid nozzle 61 discharges the rinse liquid toward the substrate W held by the spin chuck 3 . The rinse liquid supply pipe 62 supplies the rinse liquid to the rinse liquid nozzle 61 . The rinse liquid nozzle 61 of the present embodiment is a fixed nozzle that ejects the rinse liquid while the ejection port of the rinse liquid nozzle 61 is stationary. Note that the rinse liquid nozzle 61 may be a scan nozzle.

The rinse liquid valve 63 switches between supplying and stopping the supply of the rinse liquid to the rinse liquid nozzle 61 . Specifically, the rinse liquid is discharged toward the substrate W from the rinse liquid nozzle 61 when the rinse liquid valve 63 is opened. On the other hand, when the rinse liquid valve 63 is closed, the discharge of the rinse liquid is stopped. The rinse liquid valve 63 is, for example, a motor valve.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a gas nozzle 71, a gas supply pipe 72, and a liquid receiver 8. As shown in FIG.

The gas nozzle 71 ejects the gas G toward the substrate W. As shown in FIG. Gas G is an inert gas containing inert components such as nitrogen. Specifically, the gas nozzle 71 ejects the gas G toward the substrate W when the substrate W is dried.

A gas supply pipe 72 supplies gas G to the gas nozzle 71 . The gas supply pipe 72 forms a gas supply channel through which the gas G flows toward the gas nozzle 71 .

The liquid receiver 8 is arranged outside the substrate W held by the spin chuck 3 . The liquid receiver 8 has a substantially cylindrical shape. The liquid receiver 8 is vertically movable. The liquid receiver 8 receives the processing liquid L scattered from the substrate W. As shown in FIG. Specifically, when the processing liquid L is supplied to the substrate W while the spin chuck 3 is rotating the substrate W, the processing liquid L supplied to the substrate W is shaken off around the substrate W. As shown in FIG. As a result, the processing liquid L is scattered around the substrate W, and the processing liquid L scattered from the substrate W is received by the liquid receiver 8 . The processing liquid L received by the liquid receiving section 8 is sent to a processing liquid recovery section 600 which will be described with reference to FIG. The liquid receiver 8 also receives the rinsing liquid scattered from the substrate W in the same manner as the processing liquid L.

Here, a substrate processing method executed by the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. 1 and 2. FIG. FIG. 2 is a flow chart showing the substrate processing method of this embodiment. As shown in FIG. 2, the substrate processing method of this embodiment includes steps S1 to S5.

When the substrate processing apparatus 100 processes a substrate W, first, the substrate W is loaded into the processing chamber 2 (step S1). Specifically, a transport robot loads the substrate W into the processing chamber 2 . The loaded substrate W is held by the spin chuck 3 . In addition, when the substrate W is carried into the processing chamber 2, the liquid receiver 8 is positioned at the retracted position. When the liquid receiver 8 is positioned at the retracted position, the upper end 8 a ( FIG. 1 ) of the liquid receiver 8 is positioned below the spin base 31 . When the spin chuck 3 holds the substrate W, the liquid receiving part 8 moves upward to a liquid receiving position where it can receive the processing liquid L and the rinse liquid scattered from the substrate W. As shown in FIG. When the liquid receiving portion 8 is positioned at the liquid receiving position, the upper end portion 8 a of the liquid receiving portion 8 is positioned above the spin base 31 .

After the spin chuck 3 holds the substrate W, the substrate W is etched with the processing liquid L (step S2). Specifically, the spin chuck 3 rotates the substrate W before the processing liquid L is supplied to the substrate W. As shown in FIG. After the rotation speed of the substrate W reaches a predetermined rotation speed, the supply of the treatment liquid L is started.

Specifically, the treatment liquid nozzle 41 ejects the treatment liquid L while rotating about the rotation axis AX2. The processing liquid nozzle 41 ejects the processing liquid L until at least the entire upper surface of the substrate W is covered with the processing liquid L. As shown in FIG. In this embodiment, after the discharge of the treatment liquid L is stopped, the treatment liquid L is sucked from the treatment liquid nozzle 41 toward the upstream side of the treatment liquid supply pipe 42 (suck back).

When the treatment liquid nozzle 41 stops discharging the treatment liquid L, the heating unit 5 heats the substrate W and the treatment liquid L. As shown in FIG. Specifically, the infrared heater 51 heats the substrate W and the processing liquid L while rotating about the rotation axis AX3.

After heating the substrate W and the processing liquid L, the rinse liquid is supplied to the substrate W (step S3). By supplying the rinse liquid to the substrate W, the processing liquid L on the surface of the substrate W is removed. Specifically, the processing liquid L is washed away from the substrate W by the rinsing liquid and discharged to the surroundings of the substrate W. As shown in FIG. As a result, the liquid film of the processing liquid L on the substrate W is replaced with the liquid film of the rinse liquid that covers the entire upper surface of the substrate W. FIG.

After replacing the processing liquid L on the surface of the substrate W with the rinsing liquid, the substrate W is dried (step S4). Specifically, the rotation speed of the substrate W is increased more than the rotation speed during etching and rinsing. As a result, a large centrifugal force is applied to the rinse liquid on the substrate W, and the rinse liquid adhering to the substrate W is shaken off around the substrate W. FIG. In this manner, the rinsing liquid is removed from the substrate W and the substrate W is dried. Further, when drying the substrate W, the gas G is jetted toward the substrate W from the gas nozzle 71 . As a result, a stream of inert gas directed toward the surface of the substrate W is formed, and drying of the substrate W is accelerated. In addition, by accelerating the drying of the substrate W, it is possible to suppress the occurrence of watermarks. For example, the spin chuck 3 stops the rotation of the substrate W after a predetermined time has elapsed since the substrate W started rotating at high speed.

After stopping the rotation of the substrate W, the substrate W is unloaded from the processing chamber 2 (step S5), and the processing shown in FIG. 2 ends. Specifically, after the substrate W stops rotating, the liquid receiver 8 moves from the liquid receiving position to the retracted position. Further, the holding of the substrate W by the spin chuck 3 is released. When the liquid receiver 8 moves to the retracted position and the substrate W is released from the spin chuck 3 , the transfer robot carries the substrate W out of the processing chamber 2 . As a result, the processing of one substrate W by the substrate processing apparatus 100 is completed.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 1 again. As shown in FIG. 1, the substrate processing apparatus 100 further includes a thermography camera 101, a video camera 102, and a dimming lamp 103. As shown in FIG.

A thermography camera 101 detects temperature distribution in the processing chamber 2 . The temperature distribution in the processing chamber 2 is the temperature of the processing liquid L at the tip of the processing liquid nozzle 41, the temperature of the gas G at the tip of the gas nozzle 71, the temperature of the surface of the substrate W, the temperature of the partition wall 21, and the temperature of the liquid receiver 8. , the temperature of the nozzle arm 43, the temperature of the spin base 31, and the like.

The video camera 102 images the inside of the processing chamber 2 . Specifically, the video camera 102 images the processing liquid nozzle 41, the processing liquid supply pipe 42, the nozzle arm 43, the chuck pin 32, the liquid receiver 8, the substrate W, and the like. A dimming lamp 103 generates light for illuminating the processing chamber 2 .

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 and 3. FIG. FIG. 3 is a block diagram of the substrate processing apparatus 100. As shown in FIG. As shown in FIG. 3 , the substrate processing apparatus 100 further includes a liquid receiver moving section 81 and a control section 10 .

The control unit 10 has a processor 11 and a storage unit 12 . Processor 11 is, for example, a central processing unit (CPU). Alternatively, processor 11 is a general-purpose computing machine. The storage unit 12 stores data and computer programs. The storage unit 12 includes a main storage device and an auxiliary storage device. The main memory is composed of, for example, a semiconductor memory. The auxiliary storage device is composed of, for example, a semiconductor memory and/or a hard disk drive. The storage unit 12 may include removable media.

The processor 11 executes a computer program stored in the storage unit 12 to operate the FFU 22, the exhaust unit 23, the spin chuck 3, the nozzle moving unit 44, the heating unit 5, the rinse liquid supply unit 6, It controls the liquid receiver moving unit 81 , the dimming lamp 103 , the thermography camera 101 and the video camera 102 .

Specifically, the processor 11 controls an air supply fan included in the FFU 22 . Processor 11 can control the air supply fan to adjust the differential pressure across FFU 22 . The differential pressure of the FFU 22 is a set condition of the substrate processing apparatus 100 .

The processor 11 controls an exhaust fan 231 and a valve 233 provided in the exhaust section 23 . The processor 11 can control the exhaust fan 231 to adjust the wind speed of the gas flowing through the exhaust duct 232 (exhaust wind speed) and the air volume of the gas flowing through the exhaust duct 232 (exhaust air volume). Processor 11 can also control valve 233 to regulate the exhaust pressure. The exhaust air velocity, the exhaust air volume, and the exhaust pressure are setting conditions of the substrate processing apparatus 100 .

The processor 11 controls the chuck pins 32 and the spin motor 34 of the spin chuck 3 . The processor 11 can control the spin motor 34 to adjust the rotational speed of the substrate W, the rotational acceleration of the substrate W, and the change timing of the rotational speed of the substrate W. FIG. The rotation speed of the substrate W and the like are setting conditions of the substrate processing apparatus 100 .

Processor 11 receives signals from motor encoder 35 provided on spin chuck 3 . As described with reference to FIG. 1, the motor encoder 35 outputs a signal indicating the rotational speed of the substrate W. FIG. The processor 11 detects the rotational speed of the substrate W, the rotational acceleration of the substrate W, and the change timing of the rotational acceleration of the substrate W based on the signals received from the motor encoder 35 . The detected rotation speed of the substrate W and the like are execution conditions when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the detected rotational speed of the substrate W and the like.

The nozzle moving unit 44 has a motor 441 and a motor encoder 442 . Hereinafter, the motor 441 is described as "nozzle motor 441". By driving the nozzle motor 441, the treatment liquid nozzle 41 rotates about the rotation axis A2. A motor encoder 442 generates a signal indicating the rotational speed and rotational position of the nozzle motor 441 . In other words, the motor encoder 442 produces a signal indicative of the movement speed and radial position of the treatment liquid nozzle 41 .

Processor 11 controls nozzle motor 441 . The processor 11 controls the nozzle motor 441 to control the radial position of the processing liquid nozzle 41, the moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the timing of changing the position of the processing liquid nozzle 41, and the processing liquid. The change timing of the moving speed of the nozzle 41 can be adjusted. The radial position of the processing liquid nozzle 41 and the like are set conditions of the substrate processing apparatus 100 .

Processor 11 receives signals from motor encoder 442 indicative of the rotational speed and rotational position of nozzle motor 441 . Based on the signal received from the motor encoder 442, the processor 11 determines the radial position of the processing liquid nozzle 41, the moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the timing of changing the position of the processing liquid nozzle 41, And the change timing of the moving speed of the processing liquid nozzle 41 is detected. The detected position of the processing liquid nozzle 41 in the radial direction and the like are execution conditions when etching is executed. The processor 11 causes the storage unit 12 to store information indicating, for example, the detected radial position of the processing liquid nozzle 41 .

The processor 11 controls the rinse liquid valve 63 provided in the rinse liquid supply section 6 . The processor 11 also controls the infrared lamp 51 a and the heater moving section 53 provided in the heating section 5 . The processor 11 can control the infrared lamp 51a to adjust the temperature for heating the substrate W (substrate heating temperature). The substrate heating temperature is a setting condition of the substrate processing apparatus 100 .

The liquid receiver moving part 81 moves the liquid receiver 8 in the vertical direction. The liquid receiver moving section 81 includes a motor 811 and a motor encoder 812 . The motor 811 is hereinafter referred to as the "liquid receiving motor 811". By driving the liquid receiver motor 811, the liquid receiver 8 moves in the vertical direction. A motor encoder 812 generates a signal indicating the rotational speed and rotational position of the liquid receiving motor 811 . In other words, the motor encoder 812 generates signals indicating the moving speed and vertical position of the liquid receiver 8 .

Processor 11 controls liquid receiver motor 811 . The processor 11 controls the liquid receiver motor 811 to determine the vertical position of the liquid receiver 8, the movement speed of the liquid receiver 8, the acceleration of the liquid receiver 8, the timing of changing the position of the liquid receiver 8, and the liquid The change timing of the moving speed of the receiving part 8 can be adjusted. The position of the liquid receiver 8 in the vertical direction and the like are set conditions of the substrate processing apparatus 100 .

Processor 11 receives signals from motor encoder 812 indicating the rotational speed and rotational position of liquid receiver motor 811 . Based on the signals received from the motor encoder 812, the processor 11 determines the vertical position of the liquid receiver 8, the moving speed of the liquid receiver 8, the acceleration of the liquid receiver 8, the change timing of the position of the liquid receiver 8, And the change timing of the movement speed of the liquid receiver 8 is detected. The detected vertical position of the liquid receiving portion 8 and the like are execution conditions when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the detected vertical position of the liquid receiver 8 and the like.

The processor 11 can control the dimmer lamp 103 to adjust the amount of light in the processing chamber 2 . The amount of light in the processing chamber 2 is a setting condition of the substrate processing apparatus 100 .

The processor 11 receives an image signal representing the temperature distribution inside the processing chamber 2 from the thermography camera 101 . Based on the image signal received from the thermography camera 101, the processor 11 determines the temperature of the processing liquid L at the tip of the processing liquid nozzle 41, the temperature of the gas G at the tip of the gas nozzle 71, the temperature of the surface of the substrate W, and the temperature of the partition wall 21. , the temperature of the liquid receiver 8, the temperature of the nozzle arm 43, the temperature of the spin base 31, and the like. The detected temperature is the operating condition when etching is performed. The processor 11 causes the storage unit 12 to store information indicating the detected temperature.

Processor 11 receives imaging signals from video camera 102 . Information detected by the processor 11 based on the imaging signal will be described below.

Based on the imaging signal, the processor 11 determines the timing at which the treatment liquid L starts to be ejected from the treatment liquid nozzle 41 (the ejection start timing of the treatment liquid L) and the timing at which the ejection of the treatment liquid L from the treatment liquid nozzle 41 stops. (discharge stop timing of the treatment liquid L), change timing of the flow rate of the treatment liquid L discharged from the treatment liquid nozzle 41 (discharge flow rate change timing of the treatment liquid L), and flow rate of the treatment liquid L discharged from the treatment liquid nozzle 41 rise characteristics (discharge flow rate rise characteristics of the treatment liquid L), flow rate fall characteristics (discharge flow rate fall characteristics of the treatment liquid L) discharged from the treatment liquid nozzle 41, and gas G from the gas nozzle 71. Timing to start ejection (gas G ejection start timing), timing to stop ejection of gas G from the gas nozzle 71 (ejection stop timing of gas G), change timing of ejection flow rate of gas G from the gas nozzle 71 ( change timing of the ejection flow rate of the gas G), rise characteristics of the flow rate of the gas G ejected from the gas nozzle 71 (ejection flow rate rise characteristics of the gas G), and fall characteristics of the flow rate of the gas G ejected from the gas nozzle 71 (the flow rate of the gas G Ejection flow rate falling characteristic) is detected. The detected ejection start timing of the treatment liquid L and the like are execution conditions when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the detected ejection start timing of the treatment liquid L and the like.

Based on the imaging signal, the processor 11 determines the moving speed (suck-back speed) of the processing liquid L sucked from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42 and the stop position of the sucked processing liquid L. (suck back stop position) and are detected. The detected suck-back speed and suck-back stop position are execution conditions during etching. The processor 11 causes the storage unit 12 to store information indicating the detected suck-back speed and suck-back stop position.

Based on the imaging signal, the processor 11 detects whether or not the treatment liquid L is dripping from the tip of the treatment liquid nozzle 41 (whether or not there is dripping). The presence or absence of dripping is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the presence or absence of dripping.

The processor 11 detects the film thickness distribution of the treatment liquid L covering the entire surface of the substrate W based on the imaging signal. The film thickness distribution of the treatment liquid L is an execution condition when etching is executed. The processor 11 stores information indicating the film thickness distribution of the treatment liquid L in the storage unit 12 .

The processor 11 detects whether or not the treatment liquid L adheres to the upper and outer surfaces of the liquid receiver 8 based on the imaging signal. Whether or not the treatment liquid L adheres to the upper and outer surfaces of the liquid receiving portion 8 is an execution condition during etching. The processor 11 causes the storage unit 12 to store information indicating whether or not the treatment liquid L adheres to the upper and outer surfaces of the liquid receiver 8 .

The processor 11 detects the amount of the treatment liquid L adhering to the upper and outer surfaces of the liquid receiver 8 based on the imaging signal. The amount of the processing liquid L adhering to the upper surface and the outer surface of the liquid receiver 8 is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the amount of the treatment liquid L adhering to the upper and outer surfaces of the liquid receiver 8 .

The processor 11 detects the position of the treatment liquid nozzle 41, the shape of the nozzle arm 43, the shape of the heater arm 52, the position of the rinse liquid nozzle 61, and the position of the gas nozzle 71 based on the imaging signal. Further, the processor 11 determines the prescribed position of the treatment liquid nozzle 41 based on the position of the treatment liquid nozzle 41 detected based on the imaging signal and the prescribed position of the treatment liquid nozzle 41 stored in the storage unit 12. The amount of deviation from is detected. In other words, a change in the position of the processing liquid nozzle 41 is detected. Similarly, the processor 11 detects the shape of the nozzle arm 43, the shape of the heater arm 52, the position of the rinse liquid nozzle 61, the position of the gas nozzle 71, and the nozzle arms stored in the storage unit 12 based on the imaging signal. 43, the specified shape of the heater arm 52, the specified position of the rinse liquid nozzle 61, and the specified position of the gas nozzle 71, the change in the shape of the nozzle arm 43, the change in the shape of the heater arm 52, the rinse liquid nozzle A change in the position of 61 and a change in the position of gas nozzle 71 are detected. A change in the position of the processing liquid nozzle 41 and the like are execution conditions when etching is executed. The processor 11 causes the storage unit 12 to store information indicating changes in the position of the treatment liquid nozzle 41 and the like.

The processor 11 detects the position of the liquid receiver 8 and the shape of the liquid receiver 8 based on the imaging signal. Furthermore, the processor 11 determines the specified position of the liquid receiver 8 based on the position of the liquid receiver 8 detected based on the imaging signal and the specified position of the liquid receiver 8 stored in the storage unit 12 . The amount of deviation from the position, that is, the change in the position of the liquid receiver 8 is detected. Similarly, the processor 11 changes the shape of the liquid receiver 8 based on the shape of the liquid receiver 8 detected based on the imaging signal and the specified shape of the liquid receiver 8 stored in the storage unit 12. to detect A change in the position of the liquid receiving portion 8 and a change in the shape of the liquid receiving portion 8 are execution conditions during etching. The processor 11 causes the storage unit 12 to store information indicating changes in the position of the liquid receiver 8 and changes in the shape of the liquid receiver 8 .

The processor 11 detects the shape of the chuck pin 32 based on the imaging signal. Further, the processor 11 detects a change in the shape of the chuck pin 32 from the specified shape based on the shape of the chuck pin 32 detected based on the imaging signal and the specified shape of the chuck pin 32 stored in the storage unit 12. The amount, that is, the change in the shape of the chuck pin 32 is detected. The processor 11 further detects the degree of wear of the chuck pins 32 from changes in the shape of the chuck pins 32 . The change in the shape of the chuck pin 32 and the degree of wear of the chuck pin 32 are execution conditions during etching. The processor 11 causes the storage unit 12 to store information indicating the change in the shape of the chuck pin 32 and the degree of wear of the chuck pin 32 .

The processor 11 detects the airflow distribution (airflow distribution) of the gas flowing through the processing chamber 2 based on the imaging signal. The airflow distribution is an execution condition during etching. The processor 11 causes the storage unit 12 to store information indicating the airflow distribution.

The processor 11 detects the amount of eccentricity of the substrate W and the amount of surface wobbling of the substrate W based on the imaging signal. The amount of eccentricity of the substrate W and the amount of surface wobbling of the substrate W are execution conditions when performing etching. The processor 11 stores information indicating the amount of eccentricity of the substrate W and the amount of surface wobbling of the substrate W in the storage unit 12 .

The substrate processing apparatus 100 has been described above with reference to FIGS. Next, movement of the processing liquid nozzle 41 during etching processing will be described with reference to FIG. FIG. 4 is a diagram showing an example of changes in the position and movement speed of the processing liquid nozzle 41 during the etching process. 4, the vertical axis indicates the moving speed of the processing liquid nozzle 41, and the horizontal axis indicates the radial position of the substrate W. As shown in FIG.

As shown in FIG. 4, the processing liquid nozzle 41 moves from the center of the substrate W to a radial position c during the etching process. Specifically, the processing liquid nozzle 41 moves from the center of the substrate W to the radial position a while accelerating. The movement speed of the processing liquid nozzle 41 when it reaches the radial position a is "Va". After that, the treatment liquid nozzle 41 moves from the radial position a to the radial position b while decelerating. The moving speed of the processing liquid nozzle 41 when reaching the radial position b is "Vb". When the processing liquid nozzle 41 reaches the radial position b, it moves from the radial position b to the radial position c while decelerating further, and stops at the radial position c. Thus, the processing liquid nozzle 41 accelerates and decelerates during the etching process.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 and 5. FIG. FIG. 5 is a block diagram of the substrate processing apparatus 100. As shown in FIG. As shown in FIG. 5, the substrate processing apparatus 100 further includes a surface temperature sensor 104 and a surface potential sensor 105. As shown in FIG.

The surface temperature sensor 104 detects the temperature at which the substrate W is heated by the infrared heater 51 . Specifically, the surface temperature sensor 104 detects the surface temperature of the infrared heater 51 . The processor 11 receives a signal indicating the temperature at which the infrared heater 51 heats the substrate W (substrate heating temperature) from the surface temperature sensor 104 . The substrate heating temperature is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the substrate heating temperature.

The surface potential sensor 105 detects the potential of the surface of the substrate W. FIG. The processor 11 receives a signal indicating the potential of the surface of the substrate W (substrate surface potential) from the surface potential sensor 105 . The substrate surface potential is an execution condition when performing etching. The processor 11 causes the storage unit 12 to store information indicating the substrate surface potential.

As shown in FIG. 5 , the substrate processing apparatus 100 further includes a first differential pressure gauge 106 , an air supply anemometer 107 and an air supply air volume meter 108 .

A first differential pressure gauge 106 detects the differential pressure of the FFU 22 . The first differential pressure gauge 106 is, for example, a fine differential pressure gauge. Processor 11 receives a signal indicative of the differential pressure across FFU 22 from first differential pressure gauge 106 . The differential pressure of the FFU 21 is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the differential pressure of the FFU 22 .

The supply air anemometer 107 detects the wind speed of the air sent into the processing chamber 2 by the FFU 22 (supply air wind speed). Processor 11 receives a signal indicative of charge air speed from charge air anemometer 107 . The supply air velocity is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the supplied air velocity.

The supplied air flow meter 108 detects the volume of air (supplied air volume) that the FFU 22 sends into the processing chamber 2 . Processor 11 receives a signal indicative of the air supply airflow from air supply airflow meter 108 . The amount of supplied air is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the amount of supplied air.

As shown in FIG. 5 , the substrate processing apparatus 100 further includes a second differential pressure gauge 109 , an exhaust anemometer 110 and an exhaust air volume meter 111 .

A second differential pressure gauge 109 detects the differential pressure across the valve 233 . The second differential pressure gauge 109 is, for example, a fine differential pressure gauge. Processor 11 receives a signal indicative of the differential pressure across valve 233 from second differential pressure gauge 109 . The differential pressure across valve 233 corresponds to the exhaust pressure. The exhaust pressure is an execution condition during etching. The processor 11 causes the storage unit 12 to store information indicating the differential pressure (exhaust pressure) of the valve 233 .

The exhaust anemometer 110 detects the wind speed of gas exhausted from the processing chamber 2 (exhaust wind speed). Processor 11 receives a signal indicative of the exhaust air velocity from exhaust anemometer 110 . The exhaust wind speed is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the exhaust wind speed.

The exhaust air volume meter 111 detects the air volume of gas exhausted from the processing chamber 2 (exhaust air volume). The processor 11 receives a signal indicative of the exhaust airflow from the exhaust airflow meter 111 . The exhaust air volume is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the exhaust air volume.

As shown in FIG. 5, the substrate processing apparatus 100 further includes a light quantity sensor 112, an atmosphere concentration sensor 113, a humidity sensor 114, an oxygen concentration sensor 115, an ammonia concentration sensor 116, and a VOC concentration sensor 117.

A light amount sensor 112 detects the amount of light in the processing chamber 2 . The processor 11 receives a signal indicating the amount of light inside the processing chamber 2 from the light amount sensor 112 . The amount of light in the processing chamber 2 is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the amount of light in the processing chamber 2 .

The atmospheric concentration sensor 113 detects the concentration of the gaseous processing liquid L in the processing chamber 2 (processing liquid atmospheric concentration). Processor 11 receives a signal indicative of the processing liquid ambient concentration from ambient concentration sensor 113 . The processing liquid atmosphere concentration is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the atmospheric concentration of the treatment liquid.

A humidity sensor 114 detects the humidity in the processing chamber 2 . Processor 11 receives from humidity sensor 114 a signal indicative of the humidity within processing chamber 2 . The humidity in the processing chamber 2 is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the humidity inside the processing chamber 2 .

The oxygen concentration sensor 115 detects the oxygen concentration inside the processing chamber 2 . Processor 11 receives a signal indicative of the oxygen concentration in processing chamber 2 from oxygen concentration sensor 115 . The oxygen concentration in the processing chamber 2 is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the oxygen concentration in the processing chamber 2 .

The ammonia concentration sensor 116 detects the ammonia concentration inside the processing chamber 2 . Processor 11 receives a signal indicative of the concentration of ammonia in process chamber 2 from ammonia concentration sensor 116 . The concentration of ammonia in the processing chamber 2 is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the concentration of ammonia in the processing chamber 2 .

The VOC concentration sensor 117 detects the concentration of volatile organic compounds (VOC) in the processing chamber 2 (VOC concentration). Processor 11 receives a signal from VOC concentration sensor 117 indicative of the VOC concentration in process chamber 2 . The VOC concentration in the processing chamber 2 is an execution condition during etching. The processor 11 causes the storage unit 12 to store information indicating the VOC concentration in the processing chamber 2 .

Next, with reference to FIG. 6, the processing liquid supply section 40 of this embodiment will be described. FIG. 6 is a schematic diagram of the processing liquid supply section 40 of this embodiment. As shown in FIG. 6 , the substrate processing apparatus 100 has a processing liquid supply section 40 . The processing liquid supply unit 40 supplies the processing liquid L to the processing liquid nozzle 41 . In addition to the processing liquid supply pipe 42 described with reference to FIG. 426 and a suck back valve 427.

The temperature sensor 421 detects the temperature of the processing liquid L flowing through the processing liquid supply pipe 42 . The concentration sensor 422 detects the concentration of etching components contained in the processing liquid L flowing through the processing liquid supply pipe 42 . Hereinafter, the concentration of the etching component contained in the processing liquid L flowing through the processing liquid supply pipe 42 may be referred to as "first processing liquid concentration".

A valve 423 is arranged in the processing liquid supply pipe 42 . The valve 423 switches between supplying and stopping the supply of the processing liquid L to the processing liquid nozzle 41 . Also, the valve 423 controls the flow rate of the processing liquid L flowing downstream from the valve 423 in the processing liquid supply pipe 42 . Further, the valve 423 controls the ejection flow rate of the treatment liquid L ejected from the treatment liquid nozzle 41 . Also, the valve 423 controls the rise characteristics and fall characteristics of the discharge flow rate of the processing liquid L. FIG. Specifically, when the valve 423 is opened, the processing liquid L is discharged toward the substrate W from the processing liquid nozzle 41 . On the other hand, when the valve 423 is closed, the ejection of the treatment liquid L is stopped. Further, the flow rate of the processing liquid L flowing downstream from the valve 423 is adjusted according to the degree of opening of the valve 423 . Therefore, the discharge flow rate of the processing liquid L is adjusted according to the opening degree of the valve 423 . Also, the rise characteristics of the discharge flow rate of the treatment liquid L are adjusted according to the speed at which the valve 423 is opened, and the fall characteristics of the discharge flow rate of the treatment liquid L are adjusted according to the speed at which the valve 423 is closed. Valve 423 is, for example, a motor valve.

A mixing valve 424 is arranged in the processing liquid supply pipe 42 . When the mixing valve 424 is opened, pure water flows into the treatment liquid supply pipe 42 to dilute the concentration of the first treatment liquid.

The flow meter 425 detects the flow rate of the processing liquid L flowing through the processing liquid supply pipe 42 . In other words, the discharge flow rate of the treatment liquid L is detected. The heater 426 heats the processing liquid L flowing through the processing liquid supply pipe 42 .

A suck back valve 427 is arranged in the processing liquid supply pipe 42 . The suck back valve 427 is provided downstream of the valve 423 and changes the volume of the processing liquid supply channel. More specifically, the suck back valve 427 has a diaphragm, and deforms the diaphragm by allowing pressurized air to flow thereinto, thereby changing the volume of the processing liquid supply channel. When the volume of the processing liquid supply channel increases due to the inflow of pressurized air, the pressure in the channel of the processing liquid nozzle 41 and the pressure in the processing liquid supply channel instantaneously decrease, and the pressure near the opening of the processing liquid nozzle 41 decreases. A suction force acts on the processing liquid L remaining in the . In the present embodiment, after the ejection of the treatment liquid L is stopped, the control unit 10 (processor 11) described with reference to FIGS. Inject compressed air. As a result, the processing liquid L is sucked from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42 .

Next, the gas supply section 70 will be described with reference to FIG. FIG. 7 is a schematic diagram of the gas supply unit 70. As shown in FIG. As shown in FIG. 7, the substrate processing apparatus 100 has a gas supply section 70 . The gas supply unit 70 includes a regulator 721, a temperature sensor 722, a pressure sensor 723, a concentration sensor 724, a valve 725, a flow meter 726, A heater 727 is further provided.

A regulator 721 is arranged in the gas supply pipe 72 . A regulator 721 regulates the pressure of the gas supply channel. Regulator 721 is, for example, an electropneumatic regulator.

A temperature sensor 722 detects the temperature of the gas G flowing through the gas supply pipe 72 . A pressure sensor 723 detects the pressure in the gas supply channel. The concentration sensor 724 detects the concentration of inert components contained in the gas G. Hereinafter, the temperature of the gas G flowing through the gas supply pipe 72 may be referred to as "the temperature of the gas G". Also, the concentration of the inert component contained in the gas G may be described as "the concentration of the gas G".

A valve 725 is arranged in the gas supply line 72 . A valve 725 controls the ejection flow rate of the gas G ejected from the gas nozzle 71 . Also, the valve 725 controls the rise characteristics and fall characteristics of the ejection flow rate of the gas G. FIG. Specifically, the ejection flow rate of the gas G is adjusted according to the opening of the valve 725 . In addition, the rise characteristic of the jet flow rate of the gas G is adjusted according to the speed at which the valve 725 is opened, and the fall characteristic of the jet flow rate of the gas G is adjusted according to the speed at which the valve 725 is closed. Valve 725 is, for example, a motor valve.

A flow meter 726 detects the flow rate of the gas G flowing through the gas supply pipe 72 . In other words, the ejection flow rate of the gas G is detected. The heater 727 heats the gas G flowing through the gas supply pipe 72 .

Next, referring to FIG. 8, the treatment liquid circulation section 300, the first treatment liquid component supply section 510, the second treatment liquid component supply section 520, and the treatment liquid recovery section 600 will be described. FIG. 8 is a schematic diagram showing the treatment liquid circulation section 300, the first treatment liquid component supply section 510, the second treatment liquid component supply section 520, and the treatment liquid recovery section 600 of this embodiment. As shown in FIG. 8 , the substrate processing apparatus 100 further includes a processing liquid circulation section 300 , a first processing liquid component supply section 510 , a second processing liquid component supply section 520 and a processing liquid recovery section 600 .

The processing liquid circulation unit 300 circulates the processing liquid L. FIG. Specifically, the processing liquid circulation unit 300 includes a mixing tank 301, a circulation pipe 302, a heater 303, a pump 304, a valve 305, a relief valve 306, a relief pipe 307, a temperature sensor 308, A concentration sensor 309 , a pressure sensor 310 and a flow meter 311 are provided.

The mixing tank 301 contains the treatment liquid L. The circulation pipe 302 forms a circulation channel through which the treatment liquid L circulates. A treatment liquid supply pipe 42 is connected to the circulation pipe 302 .

The heater 303 heats the processing liquid L flowing through the circulation pipe 302 . A pump 304 is arranged in the circulation pipe 302 . The pump 304 sucks up the processing liquid L from the mixing tank 301 and sends the processing liquid L to the circulation pipe 302 .

A valve 305 is arranged in the circulation pipe 302 . The valve 305 controls the flow rate of the processing liquid L flowing through the circulation pipe 302 . Specifically, the flow rate of the processing liquid L flowing through the circulation pipe 302 is adjusted according to the opening degree of the valve 305 . Valve 305 is, for example, a motor valve. Hereinafter, the flow rate of the processing liquid L flowing through the circulation pipe 302 may be referred to as "processing liquid circulation flow rate".

A relief valve 306 is arranged in the circulation pipe 302 . The relief pipe 307 connects to the relief valve 306 . When the relief valve 306 is opened, the processing liquid L flows from the circulation pipe 302 into the relief pipe 307 . The relief pipe 307 guides the treatment liquid L flowing from the relief valve 306 to the preparation tank 301 . The pressure in the circulation channel is adjusted according to the degree of opening of the relief valve 306 .

A temperature sensor 308 detects the temperature of the processing liquid L flowing through the circulation pipe 302 . A concentration sensor 309 detects the concentration of etching components contained in the processing liquid L flowing through the circulation pipe 302 . Pressure sensor 310 detects the pressure in the circulation flow path. A flow meter 311 detects the processing liquid circulation flow rate. Hereinafter, the temperature of the processing liquid L flowing through the circulation pipe 302 may be referred to as "second processing liquid temperature". Also, the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302 may be referred to as "second processing liquid concentration".

The first processing liquid component supply unit 510 supplies the first processing liquid component L1 to the mixing tank 301 . The second treatment liquid component supply unit 520 supplies the second treatment liquid component L2 to the mixing tank 301 . In the mixing tank 301, the first processing liquid component L1 and the second processing liquid component L2 are mixed to generate the processing liquid L. FIG. For example, the first treatment liquid component L1 is phosphoric acid, hydrofluoric acid, nitric acid, or ammonium hydroxide, and the second treatment liquid component L2 is pure water. Alternatively, the first processing liquid component L1 is hydrofluoric acid, and the second processing liquid component L2 is an aqueous nitric acid solution. Alternatively, the first treatment liquid component L1 is an aqueous nitric acid solution, and the second treatment liquid component L2 is hydrofluoric acid. Alternatively, the first treatment liquid component L1 is ammonium hydroxide and the second treatment liquid component L2 is hydrogen peroxide solution. Alternatively, the first treatment liquid component L1 is hydrogen peroxide solution and the second treatment liquid component L2 is ammonium hydroxide.

The first processing liquid component supply unit 510 includes a pipe 511 , a regulator 512 , a pressure sensor 513 and a fixed quantity discharge pump 514 . The pipe 511 forms a first processing liquid component supply channel through which the first processing liquid component L1 flows. A pipe 511 guides the first treatment liquid component L1 to the mixing tank 301 .

Regulator 512 is arranged in pipe 511 . A regulator 512 adjusts the pressure of the first processing liquid component supply channel. Regulator 512 is, for example, an electropneumatic regulator.

A pressure sensor 513 detects the pressure of the first processing liquid component supply channel. A fixed quantity discharge pump 514 is arranged in the pipe 511 . The fixed quantity discharge pump 514 discharges the first treatment liquid component L1 by a constant quantity.

The second treatment liquid component supply unit 520 includes a pipe 521 , a regulator 522 and a pressure sensor 523 . The pipe 521 forms a second processing liquid component supply channel through which the second processing liquid component L2 flows. A pipe 521 guides the second treatment liquid component L2 to the mixing tank 301 .

Regulator 522 is arranged in pipe 521 . A regulator 522 adjusts the pressure of the second processing liquid component supply channel. Regulator 522 is, for example, an electropneumatic regulator. A pressure sensor 523 detects the pressure of the second processing liquid component supply channel.

The processing liquid recovery unit 600 supplies the used processing liquid L sent from the processing chamber 2 to the mixing tank 301 . The processing liquid recovery unit 600 includes a recovery tank 601 , a first recovery pipe 602 , a second recovery pipe 603 and a pump 604 .

The first recovery pipe 602 guides the used processing liquid L from the processing chamber 2 to the recovery tank 601 . The collection tank 601 stores the processing liquid L after use. A second recovery pipe 603 guides the used treatment liquid L from the recovery tank 601 to the preparation tank 301 . A pump 604 is arranged in the second recovery line 603 . The pump 604 sucks up the used processing liquid L from the recovery tank 601 and sends the used processing liquid L to the second recovery pipe 603 .

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 6 to 9. FIG. FIG. 9 is a block diagram of the substrate processing apparatus 100. As shown in FIG. As shown in FIG. 9, the processor 11 executes a computer program stored in the storage unit 12 to perform the processing liquid supply unit 40, the gas supply unit 70, the processing liquid circulation unit 300, and the first processing liquid component supply unit. 510 , the second processing liquid component supply unit 520 , and the processing liquid recovery unit 600 .

Specifically, the processor 11 controls a valve 423 , a mixing valve 424 , a heater 426 and a suck back valve 427 provided in the processing liquid supply section 40 .

The processor 11 can control the valve 423 and the mixing valve 424 to adjust the concentration of etching components (first processing liquid concentration) contained in the processing liquid L flowing through the processing liquid supply pipe 42 . The first processing liquid concentration is a setting condition of the substrate processing apparatus 100 . Furthermore, the processor 11 can control the valve 423 to adjust the ejection flow rate of the treatment liquid L ejected from the treatment liquid nozzle 41 . In addition, the processor 11 can control the valve 423 to adjust the rise characteristics and fall characteristics of the discharge flow rate of the treatment liquid L. FIG. The discharge flow rate of the processing liquid L, the rise characteristic of the discharge flow rate of the processing liquid L, and the fall characteristic of the discharge flow rate of the processing liquid L are setting conditions of the substrate processing apparatus 100 .

Further, the processor 11 can adjust the ejection start timing of the treatment liquid L by adjusting the generation timing of the signal for starting ejection of the treatment liquid L from the treatment liquid nozzle 41 . Specifically, the signal for starting ejection of the treatment liquid L is a signal for opening the valve 423, and the timing for starting ejection of the treatment liquid L can be adjusted by adjusting the generation timing of the signal for opening the valve 423. . The generation timing of the signal for opening the valve 423 is a setting condition of the substrate processing apparatus 100 .

Further, the processor 11 can adjust the timing of stopping the ejection of the treatment liquid L by adjusting the timing of generating a signal for stopping the ejection of the treatment liquid L from the treatment liquid nozzles 41 . Specifically, the signal for stopping the discharge of the treatment liquid L is a signal for closing the valve 423, and the timing for stopping the discharge of the treatment liquid L can be adjusted by adjusting the generation timing of the signal for closing the valve 423. . The generation timing of the signal for closing the valve 423 is a setting condition of the substrate processing apparatus 100 .

Further, the processor 11 can adjust the timing of changing the ejection flow rate of the treatment liquid L by adjusting the timing of generating a signal for changing the flow rate of the treatment liquid L ejected from the treatment liquid nozzle 41 . Specifically, the signal for changing the flow rate of the treatment liquid L discharged is a signal for changing the opening degree of the valve 423, and the generation timing of the signal for changing the opening degree of the valve 423 is adjusted. can be adjusted. The generation timing of the signal for changing the opening of the valve 423 is a setting condition of the substrate processing apparatus 100 .

The processor 11 can control the heater 426 to adjust the temperature of the processing liquid L flowing through the processing liquid supply pipe 42 . Hereinafter, the temperature of the processing liquid L flowing through the processing liquid supply pipe 42 may be referred to as "first processing liquid temperature". The first processing liquid temperature is a setting condition of the substrate processing apparatus 100 .

Processor 11 can control suckback valve 427 to adjust the suckback speed and suckback stop position described with reference to FIGS. The suck-back speed and the suck-back stop position are setting conditions of the substrate processing apparatus 100 .

The processor 11 also receives signals from a temperature sensor 421 , a concentration sensor 422 and a flow meter 425 provided in the processing liquid supply section 40 . A signal output from the temperature sensor 421 indicates the temperature of the first treatment liquid. A signal output by the concentration sensor 422 indicates the concentration of the first treatment liquid. A signal output from the flow meter 425 indicates the discharge flow rate of the processing liquid L. FIG. The temperature of the first treatment liquid, the concentration of the first treatment liquid, and the discharge flow rate of the treatment liquid L are execution conditions when etching is performed. The processor 11 stores information indicating the temperature of the first treatment liquid, the concentration of the first treatment liquid, and the discharge flow rate of the treatment liquid L in the storage unit 12 . Furthermore, the processor 11 detects the purity of the treatment liquid L based on the signal output by the concentration sensor 422 . The purity of the processing liquid L is an execution condition when performing etching, and the processor 11 stores information indicating the purity of the processing liquid L in the storage unit 12 .

The processor 11 controls a regulator 721 , a valve 725 and a heater 727 provided in the gas supply section 70 .

Processor 11 can control regulator 721 to regulate the pressure in the gas supply channel. The pressure of the gas supply channel is a setting condition of the substrate processing apparatus 100 .

The processor 11 can control the valve 725 to adjust the ejection flow rate of the gas G ejected from the gas nozzle 71 . In addition, the processor 11 can control the valve 725 to adjust the rise characteristics and fall characteristics of the ejection flow rate of the gas G. FIG. The ejection flow rate of the gas G, the rising characteristic of the ejection flow rate of the gas G, and the falling characteristic of the ejection flow rate of the gas G are setting conditions of the substrate processing apparatus 100 .

In addition, the processor 11 can adjust the timing for starting the ejection of the gas G from the gas nozzle 71 by adjusting the generation timing of the signal for starting the ejection of the gas G from the gas nozzle 71 . Specifically, the signal for starting the ejection of the gas G is a signal for opening the valve 725, and the timing for starting the ejection of the gas G can be adjusted by adjusting the generation timing of the signal for opening the valve 725. The generation timing of the signal for opening the valve 725 is a setting condition of the substrate processing apparatus 100 .

The processor 11 can also adjust the timing of stopping the ejection of the gas G by adjusting the generation timing of the signal for stopping the ejection of the gas G from the gas nozzle 71 . Specifically, the signal for stopping the ejection of the gas G is a signal for closing the valve 725, and the timing for stopping the ejection of the gas G can be adjusted by adjusting the generation timing of the signal for closing the valve 725. The generation timing of the signal for closing the valve 725 is a setting condition of the substrate processing apparatus 100 .

Further, the processor 11 can adjust the timing of changing the ejection flow rate of the gas G by adjusting the generation timing of the signal for changing the flow rate of the gas G ejected from the gas nozzle 71 . Specifically, the signal for changing the flow rate of the jetted gas G is a signal for changing the opening degree of the valve 725, and the generation timing of the signal for changing the opening degree of the valve 725 is adjusted so that the gas G is jetted. Flow rate change timing can be adjusted. The generation timing of the signal for changing the degree of opening of the valve 725 is a setting condition of the substrate processing apparatus 100 .

The processor 11 can control the heater 727 to adjust the temperature of the gas G flowing through the gas supply pipe 72 . The temperature of the gas G is a setting condition of the substrate processing apparatus 100 .

The processor 11 also receives signals from a temperature sensor 722 , a pressure sensor 723 , a concentration sensor 724 and a flow meter 726 provided in the treatment liquid supply section 40 . A signal output from the temperature sensor 722 indicates the temperature of the gas G flowing through the gas supply pipe 72 . A signal output by the pressure sensor 723 indicates the pressure in the gas supply channel. A signal output from the concentration sensor 724 indicates the concentration of the inert component contained in the gas G (concentration of the gas G). A signal output by the flow meter 726 indicates the ejection flow rate of the gas G. FIG. The temperature of the gas G, the pressure of the gas supply channel, the concentration of the gas G, and the ejection flow rate of the gas G are execution conditions when etching is performed. The processor 11 stores information indicating the temperature of the gas G, the pressure of the gas supply channel, the concentration of the gas G, and the ejection flow rate of the gas G in the storage unit 12 . Furthermore, the processor 11 detects the purity of the gas G based on the signal output by the concentration sensor 724 . The purity of the gas G is an execution condition when performing etching, and the processor 11 stores information indicating the purity of the gas G in the storage unit 12 .

The processor 11 controls a heater 303 , a pump 304 , a valve 305 and a relief valve 306 provided in the processing liquid circulation section 300 .

The processor 11 can control the heater 303 to adjust the temperature of the processing liquid L flowing through the circulation pipe 302 (second processing liquid temperature). The second processing liquid temperature is a setting condition of the substrate processing apparatus 100 .

The processor 11 can control the valve 305 to adjust the flow rate of the processing liquid L flowing through the circulation pipe 302 (processing liquid circulation flow rate). The processing liquid circulation flow rate is a setting condition of the substrate processing apparatus 100 .

The processor 11 can control the relief valve 306 to regulate the pressure of the circulation flow path. The pressure of the circulation channel is a setting condition of the substrate processing apparatus 100 .

The processor 11 receives signals from a temperature sensor 308 , a concentration sensor 309 , a pressure sensor 310 and a flow meter 311 provided in the treatment liquid circulation section 300 . A signal output from the temperature sensor 308 indicates the temperature of the processing liquid L flowing through the circulation pipe 302 (second processing liquid temperature). A signal output from the concentration sensor 309 indicates the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302 (second processing liquid concentration). A signal output from the pressure sensor 310 indicates the pressure in the circulation flow path. A signal output from the flow meter 311 indicates the processing liquid circulation flow rate. The temperature of the second treatment liquid, the concentration of the second treatment liquid, the pressure of the circulation channel, and the circulation flow rate of the treatment liquid are execution conditions when etching is performed. The processor 11 causes the storage unit 12 to store information indicating the temperature of the second treatment liquid, the concentration of the second treatment liquid, the pressure of the circulation channel, and the circulation flow rate of the treatment liquid.

The processor 11 controls the regulator 512 and the constant discharge pump 514 provided in the first processing liquid component supply section 510 . The processor 11 can control the regulator 512 to adjust the pressure of the first processing liquid component supply channel. Also, the processor 11 can control the constant discharge pump 514 to adjust the concentration of the second treatment liquid. The pressure of the first processing liquid component supply channel and the concentration of the second processing liquid are setting conditions of the substrate processing apparatus 100 .

The processor 11 receives a signal from a pressure sensor 513 included in the first processing liquid component supply section 510 . A signal output from the pressure sensor 513 indicates the pressure in the first processing liquid component supply channel. The pressure of the first processing liquid component supply channel is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the pressure of the first treatment liquid component supply channel.

The processor 11 can control the regulator 522 provided in the second processing liquid component supply section 520 to adjust the pressure of the second processing liquid component supply channel. The pressure of the second processing liquid component supply channel is a setting condition of the substrate processing apparatus 100 .

The processor 11 receives signals from the pressure sensor 523 provided in the second treatment liquid component supply section 520 . A signal output from the pressure sensor 523 indicates the pressure in the second processing liquid component supply channel. The pressure of the second processing liquid component supply channel is an execution condition when etching is executed. The processor 11 causes the storage unit 12 to store information indicating the pressure of the second treatment liquid component supply channel.

Next, the substrate processing system 1000 of this embodiment will be described with reference to FIG. FIG. 10 is a schematic diagram of a substrate processing system 1000 of this embodiment. As shown in FIG. 10, the substrate processing system 1000 includes a substrate processing apparatus 100 and an inspection apparatus 200. As shown in FIG.

The substrate processing apparatus 100 etches the substrate W as described with reference to FIGS. Hereinafter, the substrate W before being etched (the substrate W before being carried into the processing chamber 2) may be referred to as an "unprocessed substrate Wb". Also, the substrate W after being etched may be referred to as a "processed substrate Wa".

The inspection apparatus 200 inspects the processed substrate Wa and creates inspection result data of the processed substrate Wa. The inspection result data indicates the results of the etching execution. Specifically, the inspection apparatus 200 measures the film thickness at each radial position of the processed substrate Wa. Further, the inspection apparatus 200 creates data indicating the etching amount for each radial position of the processed substrate Wa based on the measured film thickness data and the film thickness distribution data of the unprocessed substrate Wb.

Next, with reference to FIG. 11, the etching amount for each radial position of the processed substrate Wa will be described. FIG. 11 is a diagram showing an example of the etching amount for each radial position of the processed substrate Wa. In other words, FIG. 11 shows an example of an etching profile. The etching profile is produced by plotting the etching amount for each radial position of the processed substrate Wa. In FIG. 11, the vertical axis indicates the etching amount, and the horizontal axis indicates the radial position of the processed substrate Wa.

Although it is desirable for the etching amount to match the target value over the entire processed substrate Wa, the actual etching amount varies as shown in FIG. Therefore, the etching amount serves as an index of the performance or state of the substrate processing apparatus 100. FIG. In other words, the amount of etching over the entire processed substrate Wa is a characteristic amount of the etching execution result.

Moreover, it is desirable that the etching amount be uniform over the entire processed substrate Wa. Therefore, the uniformity (dispersion) of the etching amount is an index of the state or performance of the substrate processing apparatus 100 . In other words, the etch amount uniformity is a characteristic quantity of the results of the etch execution.

Data indicating the uniformity of the etching amount is not limited to dispersion. For example, the maximum value Emax and the minimum value Emin of the etching amount and the average value of the etching amount also indicate the uniformity of the etching amount. Therefore, the maximum value Emax and the minimum value Emin of the etching amount, and the average value of the etching amount are also characteristic quantities of the etching execution result. The etching profile also shows the uniformity of the etching amount. Therefore, the etching profile is also a feature quantity of the etching execution result.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. FIG. 12 is a block diagram of the substrate processing apparatus 100 of this embodiment. As shown in FIG. 12 , the substrate processing apparatus 100 further includes an input section 13 .

The input unit 13 is a user interface device operated by an operator. The input unit 13 inputs data to the processor 11 according to the operator's operation. For example, the input unit 13 includes a keyboard and mouse. Note that the input unit 13 may include a touch display. In this embodiment, the operator operates the input unit 13 to input the feature amount of the etching execution result to the processor 11 . The processor 11 causes the storage unit 12 to store the feature amount of the etching execution result.

Specifically, the operator operates the input unit 13 to input data indicating the amount of etching over the entire processed substrate Wa and data indicating the uniformity of the amount of etching. The data indicating the amount of etching over the processed substrate Wa can be an etching profile. The operator may input either the etching amount over the entire processed substrate Wa or the uniformity (dispersion) of the etching amount. Alternatively, the operator may input at least one of the maximum value Emax and the minimum value Emin of the etching amount, and the average value of the etching amount instead of or in addition to the dispersion. The uniformity (dispersion) of the etching amount may be calculated by the operator or may be calculated by the inspection apparatus 200 . Similarly, the maximum value Emax and the minimum value Emin of the etching amount and the average value of the etching amount may be calculated by the operator or may be calculated by the inspection apparatus 200 .

The processor 11 causes the storage unit 12 to store the various execution conditions described with reference to FIGS. 3, 5 and 9 and the feature quantity of the etching execution result. Further, the storage unit 12 stores, as execution conditions, data indicating the type of film of the unprocessed substrate Wb, data indicating the film thickness distribution of the unprocessed substrate Wb, data indicating the thickness of the unprocessed substrate Wb, Data indicating the surface state of the unprocessed substrate Wb is stored in advance. The film type includes, for example, at least one of a silicon oxide film and a silicon nitride film.

The processor 11 generates correction data for correcting at least one of the various setting conditions described with reference to FIGS. to generate

Next, referring to FIG. 13, a method for correcting setting conditions executed by the substrate processing apparatus 100 of the present embodiment will be described. FIG. 13 is a flow chart showing the correction method of this embodiment. As shown in FIG. 13, the correction method of this embodiment includes steps S11 to S13.

When correcting the setting conditions, the processor 11 first stores the execution conditions described with reference to FIGS. (step S11).

Next, the processor 11 reads out and acquires the execution condition and the feature amount from the storage unit 12, and based on the acquired execution condition and the feature amount, selects one of the various setting conditions described with reference to FIGS. Correction data for correcting at least one setting condition is generated (step S12).

Next, the processor 11 corrects the corresponding setting conditions based on the correction data (step S13), and ends the processing shown in FIG.

The processor 11 of this embodiment generates correction data using a learned model generated by machine learning. Specifically, the processor 11 inputs the execution condition and the feature amount read from the storage unit 12 to the learned model. As a result, corrected data is output from the learned model. Machine learning is, for example, one of supervised learning, unsupervised learning, semi-supervised learning, reinforcement learning, and deep learning.

Next, with reference to FIG. 14, the trained model 130 of this embodiment will be described. FIG. 14 is a schematic diagram of the trained model 130. As shown in FIG. As shown in FIG. 14, trained model 130 is a neural network. Processor 11 generates correction data using a neural network. Hereinafter, the trained model 130 may be referred to as "neural network 130".

As shown in FIG. 14, neural network 130 has input layer 131 , intermediate layer 132 , and output layer 133 . The processor 11 inputs to the input layer 131 the execution condition and the feature quantity read out from the storage unit 12 . As a result, correction data is output from the output layer 133 . The setting conditions to be corrected may be determined in advance, or the neural network 130 may determine the setting conditions to be corrected. Further, although the neural network 130 shown in FIG. 14 has a single intermediate layer 132, the neural network 130 may have a multilayer structure.

Next, machine learning executed by the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. 15 . FIG. 15 is a flow chart showing the learning method of this embodiment. As shown in FIG. 15, the learning method of this embodiment includes steps S21 to S23.

When executing machine learning, teacher information (teacher data) is input to the processor 11 (step S21). The processor 11 causes the storage unit 12 to store the input teacher information. The teacher information is information obtained when the feature quantity described with reference to FIG. 12 indicates the optimum value. That is, the teacher information includes an execution condition obtained when the feature value indicates the optimum value, and the feature value indicating the optimum value. Further, the teacher information includes setting conditions obtained when the feature value indicates the optimum value.

Next, the processor 11 reads and acquires teacher information (execution conditions, feature amounts, and setting conditions) from the storage unit 12, executes machine learning based on the acquired teacher information (step S22), is generated (step S23), and the process shown in FIG. 15 ends. Specifically, the processor 11 measures changes in the etching amount according to the execution conditions and setting conditions, and changes in etching amount uniformity according to the execution conditions and the setting conditions, from a plurality of pieces of teaching information, and obtains the measurement results Update the weighting factors based on

The first embodiment has been described above. According to this embodiment, the setting condition can be corrected (adjusted) without the operator manually changing the setting condition. Therefore, the burden on the operator can be reduced.

Note that the setting conditions may be part of the setting conditions described in the present embodiment.

Moreover, the environmental conditions of the factory where the substrate processing apparatus 100 is installed may be added to the execution conditions. Specifically, information indicating the temperature, humidity, oxygen concentration, ammonia concentration, VOC concentration, and atmospheric pressure of the atmosphere in which the substrate processing apparatus 100 is installed, and the altitude of the location where the factory is installed are used as execution conditions by the processor 11 . can be entered in the In this case, from the temperature sensor, humidity sensor, oxygen concentration sensor, ammonia concentration sensor, VOC concentration sensor, atmospheric pressure sensor, and altitude sensor installed in the factory, temperature data, humidity data, oxygen concentration data, ammonia concentration data, VOC concentration Data, barometric data, and altitude data are input to processor 11 .

[Embodiment 2]
Next, Embodiment 2 of the present invention will be described with reference to FIG. However, matters different from those of the first embodiment will be explained, and explanations of matters that are the same as those of the first embodiment will be omitted. The second embodiment differs from the first embodiment in that a correction data generation device 1100 generates correction data.

FIG. 16 is a schematic diagram of a substrate processing system 1000 according to the second embodiment. As shown in FIG. 16, the substrate processing system 1000 according to the second embodiment includes a substrate processing apparatus 100, an inspection apparatus 200, and a correction data generation apparatus 1100. FIG.

The substrate processing apparatus 100 has a communication interface 14 . Communication interface 14 controls communication with correction data generation device 1100 . Specifically, communication interface 14 transmits data indicating execution conditions to correction data generation device 1100 . Communication interface 14 also receives correction data from correction data generation device 1100 . The communication interface 14 is, for example, a LAN board or a wireless LAN board. The substrate processing apparatus 100 corrects (adjusts) the setting conditions to be corrected based on the correction data received from the correction data generation apparatus 1100 .

The inspection device 200 has a communication interface 201 . Communication interface 201 controls communication with correction data generation device 1100 . Specifically, the communication interface 201 transmits data indicating the feature quantity to the correction data generation device 1100 . The communication interface 201 is, for example, a LAN board or a wireless LAN board.

Correction data generation device 1100 includes communication interface 1101 and control unit 1110 . Correction data generation device 1100 is, for example, a server device.

The communication interface 1101 controls communication with the substrate processing apparatus 100 and communication with the inspection apparatus 200 . Specifically, the communication interface 1101 receives data indicating execution conditions from the substrate processing apparatus 100 . Also, the communication interface 1101 receives data indicating the feature quantity from the inspection apparatus 200 . Furthermore, the communication interface 1101 transmits correction data to the substrate processing apparatus 100 .

The control unit 1110 generates correction data based on the execution conditions received from the substrate processing apparatus 100 and the feature amount from the inspection apparatus 200 . Specifically, control unit 1110 includes processor 1111 and storage unit 1112 . Processor 1111 is, for example, a central processing unit (CPU). Alternatively, processor 1111 is a general purpose computing machine. The storage unit 1112 stores data and computer programs. Storage unit 1112 includes a main storage device and an auxiliary storage device. The main memory is composed of, for example, a semiconductor memory. The auxiliary storage device is composed of, for example, a semiconductor memory and/or a hard disk drive. Storage unit 1112 may include removable media.

The processor 1111, like the processor 11 described in the first embodiment, generates correction data based on the execution condition and feature amount. After generating the correction data, the processor 1111 transmits the correction data to the substrate processing apparatus 100 via the communication interface 1101 . Also, the processor 1111 generates a trained model 130 based on teacher information (teacher data), like the processor 11 described in the first embodiment. Of the teaching information, the substrate processing apparatus 100 transmits data indicating execution conditions and data indicating setting conditions to the correction data generating apparatus 1100 . In addition, the inspection device 200 transmits the data indicating the feature amount in the teacher information to the correction data generation device 1100 .

The second embodiment has been described above. According to the present embodiment, similarly to the first embodiment, the setting conditions can be corrected (adjusted) without the operator manually changing the setting conditions. Therefore, the burden on the operator can be reduced.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and can be implemented in various aspects without departing from the gist of the present invention.

For example, although the inspection apparatus 200 measures the film thickness in the embodiment of the present invention, the substrate processing apparatus 100 may include a film thickness measurement sensor for measuring the film thickness.

In addition, in the embodiment of the present invention, an etching profile is created by plotting the etching amount for each radial position of the processed substrate Wa. good.

In the embodiment of the present invention, the processor 11 determines the temperature of the treatment liquid L at the tip of the treatment liquid nozzle 41 and the gas temperature at the tip of the gas nozzle 71 based on the image signal (temperature distribution data) generated by the thermography camera 101 The processor 11 detects the temperature of the processing liquid L at the tip of the processing liquid nozzle 41 and the temperature of the gas G at the tip of the gas nozzle 71 based on the output signals of the temperature sensor 421 and the temperature sensor 722. and may be detected.

Further, in the embodiment of the present invention, the processor 11 controls the ejection start timing of the treatment liquid L, the ejection stop timing of the treatment liquid L, the ejection flow rate change timing of the treatment liquid L, discharge flow rate rise characteristics of the treatment liquid L, discharge flow rate fall characteristics of the treatment liquid L, ejection start timing of the gas G, ejection stop timing of the gas G, ejection flow rate change timing of the gas G, ejection flow rate rise characteristics of the gas G, and Although the ejection flow rate fall characteristic of the gas G is detected, the processor 11 may detect the ejection start timing of the treatment liquid L based on the output signals of the flow meters 425 and 726 .

Further, in the embodiment of the present invention, the concentration sensor 422 is used to detect the purity of the processing liquid L, but the purity of the processing liquid L may be detected using a resistivity meter. Similarly, in the embodiment of the present invention, the concentration sensor 724 is used to detect the purity of the gas G, but a resistivity meter may be used to detect the purity of the gas G.

Further, in the embodiment of the present invention, the amount of eccentricity of the substrate W and the amount of surface wobbling of the substrate W are detected using the video camera 102. may be detected.

Also, correction data may be generated using some of the execution conditions described in the embodiments of the present invention. Preferably, the execution conditions to be used are the exhaust air velocity, the exhaust air volume, the rotational speed of the substrate W, the rotational acceleration of the substrate W, the change timing of the rotational speed of the substrate W, the position of the processing liquid nozzle 41 in the radial direction, and the processing liquid. The moving speed of the nozzle 41, the acceleration of the processing liquid nozzle 41, the timing of changing the radial position of the processing liquid nozzle 41, the timing of changing the moving speed of the processing liquid nozzle 41, the vertical position of the liquid receiving portion 8, and the liquid receiving portion. 8, the acceleration of the liquid receiving part 8, the timing of changing the vertical position of the liquid receiving part 8, the timing of changing the moving speed of the liquid receiving part 8, the temperature of the processing liquid L at the tip of the processing liquid nozzle 41, the gas nozzle. 71 temperature of gas G, substrate surface temperature, discharge start timing of treatment liquid L, discharge stop timing of treatment liquid L, discharge flow rate change timing of treatment liquid L, discharge flow rate rise characteristics of treatment liquid L, treatment liquid L ejection flow rate fall characteristics of gas G, ejection start timing of gas G, ejection stop timing of gas G, ejection flow rate change timing of gas G, ejection flow rate rise characteristics of gas G, ejection flow rate fall characteristics of gas G, treatment liquid L Suck-back speed, suck-back stop position of the treatment liquid L, presence or absence of dripping of the treatment liquid L, film thickness distribution of the treatment liquid L, presence or absence of adhesion of the treatment liquid L to the upper surface and the outer surface of the liquid receiving part 8, liquid receiver The amount of the processing liquid L adhering to the upper and outer surfaces of the portion 8, the amount of eccentricity of the substrate W, the amount of surface deflection of the substrate W, the air supply air velocity, the air supply air volume, the concentration of the first processing liquid, and the discharge of the processing liquid L. Flow rate, jet flow rate of gas G, differential pressure of FFU 21, substrate heating temperature, amount of light in processing chamber 2, temperature of liquid receiver 8, temperature of nozzle arm 43, temperature of spin base 31, temperature of partition wall 21, processing liquid Purity of L, purity of gas G, change in position of processing liquid nozzle 41, change in shape of nozzle arm 43, change in shape of heater arm 52, change in position of rinse liquid nozzle 61, change in position of gas nozzle 71, Change in position of liquid receiver 8, change in shape of liquid receiver 8, change in shape of chuck pin 32, degree of wear of chuck pin 32, airflow distribution, substrate surface potential, differential pressure of valve 233, atmospheric concentration of processing liquid , the humidity in the processing chamber 2, the oxygen concentration in the processing chamber 2, the ammonia concentration in the processing chamber 2, the VOC concentration in the processing chamber 2, and the pressure of the circulation channel. More preferably, the execution conditions to be used are the exhaust air velocity, the exhaust air volume, the rotational speed of the substrate W, the rotational acceleration of the substrate W, the change timing of the rotational speed of the substrate W, the radial position of the processing liquid nozzle 41, and the processing liquid nozzle. 41, the acceleration of the processing liquid nozzle 41, the timing of changing the radial position of the processing liquid nozzle 41, the timing of changing the moving speed of the processing liquid nozzle 41, the vertical position of the liquid receiving portion 8, and the liquid receiving portion 8. , the acceleration of the liquid receiving portion 8, the timing of changing the vertical position of the liquid receiving portion 8, the timing of changing the moving speed of the liquid receiving portion 8, the temperature of the processing liquid L at the tip of the processing liquid nozzle 41, the gas nozzle 71 The temperature of the gas G at the tip of the substrate, the substrate surface temperature, the discharge start timing of the processing liquid L, the discharge stop timing of the processing liquid L, the discharge flow rate change timing of the processing liquid L, the discharge flow rate rise characteristics of the processing liquid L, the processing liquid L Discharge flow rate fall characteristics, gas G discharge start timing, gas G discharge stop timing, gas G discharge flow rate change timing, gas G discharge flow rate rise characteristics, gas G discharge flow rate fall characteristics, processing liquid L sack Back speed, suck-back stop position of the processing liquid L, presence or absence of dripping of the processing liquid L, film thickness distribution of the processing liquid L, presence or absence of adhesion of the processing liquid L on the upper surface and the outer surface of the liquid receiving portion 8, liquid receiving portion 8, the amount of eccentricity of the substrate W, the amount of surface deflection of the substrate W, the air supply air velocity, the air supply air volume, the concentration of the first treatment liquid, and the discharge flow rate of the treatment liquid L. , the jet flow rate of the gas G.

Further, in the embodiments of the present invention, the substrate W is a semiconductor wafer, but the substrate W may be a liquid crystal display device substrate, a field emission display (FED) substrate, an optical disk substrate, or a magnetic disk substrate. , a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, and a solar cell substrate.

Further, in the embodiment of the present invention, the spin chuck 3 is a clamping type chuck in which the plurality of chuck pins 32 are brought into contact with the peripheral edge surface of the substrate W. It may be a vacuum chuck that horizontally holds the substrate W by sucking the back surface (lower surface) of the spin base 31 onto the upper surface of the spin base 31 .

Further, in the embodiment of the present invention, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one. good.

INDUSTRIAL APPLICABILITY The present invention is preferably used in a substrate processing apparatus for processing substrates.

2 processing chamber 8 liquid receiver 10 control unit 40 processing liquid supply unit 41 processing liquid nozzle 70 gas supply unit 71 gas nozzle 72 gas supply pipe 100 substrate processing apparatus 200 inspection apparatus 231 exhaust fan 232 exhaust duct 233 valve 300 processing liquid circulation unit 510 First processing liquid component supply unit 520 Second processing liquid component supply unit 1000 Substrate processing system 1100 Correction data generation device 1110 Control unit W Substrate

Claims (7)

A correction method for correcting setting conditions of a substrate processing apparatus for etching a substrate with a processing liquid before starting etching of a first substrate, comprising:
an acquisition step of acquiring at least one execution condition among the execution conditions when executing the etching, and at least one feature amount indicating the execution result of the etching;
a generation step of generating correction data for correcting at least one of the setting conditions based on the at least one execution condition and the at least one feature quantity;
a correction step in which the substrate processing apparatus corrects the at least one setting condition based on the correction data;
The correction method, wherein the at least one feature amount includes at least one of an etching amount of a second substrate etched before the first substrate and uniformity of the etching amount. In the obtaining step, the at least one execution condition and the at least one feature amount are input to a trained model generated by machine learning;
2. The correction method according to claim 1, wherein said correction data is output from said learned model in said generating step. further comprising a learning step of machine-learning teacher information to generate the trained model;
The teacher information is information obtained when the at least one feature value exhibits an optimum value, and includes the at least one feature value, the at least one execution condition, and the at least one setting condition. 3. The correction method according to claim 2. The substrate processing apparatus is
a processing chamber containing the substrate;
a first nozzle for discharging a processing liquid for etching the substrate toward the substrate;
a supply channel for supplying the treatment liquid to the first nozzle;
a liquid receiver that receives the processing liquid scattered from the substrate;
a second nozzle for ejecting gas toward the substrate;
a fan filter unit for sending air into the processing chamber;
an exhaust fan for exhausting gas from the processing chamber,
The execution conditions for executing the etching are
the temperature of the treatment liquid at the tip of the first nozzle;
the temperature of the gas at the tip of the second nozzle;
a flow rate of the treatment liquid discharged from the first nozzle;
a flow rate at which the gas is ejected from the second nozzle;
a timing at which the treatment liquid starts to be discharged from the first nozzle;
a timing at which the gas starts to be ejected from the second nozzle;
a timing at which ejection of the treatment liquid from the first nozzle stops;
a timing at which the ejection of the gas from the second nozzle stops;
change timing of the flow rate of the treatment liquid ejected from the first nozzle;
change timing of the flow rate of the gas ejected from the second nozzle;
rising characteristics of the flow rate of the treatment liquid discharged from the first nozzle;
rising characteristics of the flow rate of the gas ejected from the second nozzle;
Falling characteristics of the flow rate of the treatment liquid ejected from the first nozzle;
Falling characteristics of the flow rate of the gas ejected from the second nozzle;
information indicating whether or not the treatment liquid is dripping from the tip of the first nozzle;
concentration of the treatment liquid flowing through the supply channel;
a speed at which the treatment liquid is sucked from the first nozzle toward the upstream side of the supply channel after the ejection of the treatment liquid is stopped;
a position where the sucked treatment liquid stops;
a film thickness distribution of the treatment liquid covering the substrate;
a position of the first nozzle;
a moving speed of the first nozzle;
acceleration of the first nozzle;
change timing of the position of the first nozzle;
change timing of the moving speed of the first nozzle;
information indicating whether or not the treatment liquid adheres to the liquid receiving portion;
an amount of the processing liquid adhering to the liquid receiving portion;
a rotational speed of the substrate;
acceleration of the substrate;
change timing of the rotation speed of the substrate;
a surface temperature of the substrate;
an amount of eccentricity of the substrate;
an amount of surface runout of the substrate;
a position of the liquid receiver;
a moving speed of the liquid receiver;
acceleration of the liquid receiver;
timing of changing the position of the liquid receiver;
change timing of the movement speed of the liquid receiver;
a wind speed of the air sent into the processing chamber by the fan filter unit;
a volume of air sent into the processing chamber by the fan filter unit;
a wind speed of the gas exhausted from the processing chamber;
4. The correction method according to any one of claims 1 to 3, comprising at least one of; The substrate processing apparatus is
a processing chamber containing the substrate;
a first nozzle for discharging a processing liquid for etching the substrate toward the substrate;
a first supply channel that supplies the treatment liquid to the first nozzle;
a circulation channel connected to the first supply channel and through which the treatment liquid circulates;
a second supply channel that supplies the processing liquid to the circulation channel;
a heating unit that heats the substrate;
a liquid receiver that receives the processing liquid scattered from the substrate;
a second nozzle for ejecting gas toward the substrate;
a third supply channel for supplying the gas to the second nozzle;
a fan filter unit for sending air into the processing chamber;
an exhaust fan for exhausting gas from the processing chamber;
an exhaust duct through which gas exhausted from the processing chamber flows;
a valve installed in the exhaust duct;
The setting conditions of the substrate processing apparatus are
the temperature of the treatment liquid in the circulation channel;
a temperature of the treatment liquid in the first supply channel;
the temperature of the gas in the third supply channel;
a concentration of the treatment liquid in the circulation channel;
concentration of the treatment liquid in the first supply channel;
the pressure of the second supply channel;
the pressure of the third supply channel;
the pressure of the circulation channel;
a flow rate of the treatment liquid flowing through the circulation channel;
a flow rate of the treatment liquid discharged from the first nozzle;
a flow rate at which the gas is ejected from the second nozzle;
generation timing of a signal for starting ejection of the treatment liquid from the first nozzle;
generation timing of a signal for starting ejection of the gas from the second nozzle;
generation timing of a signal for stopping ejection of the treatment liquid from the first nozzle;
generation timing of a signal for stopping ejection of the gas from the second nozzle;
generation timing of a signal for changing a flow rate of the treatment liquid ejected from the first nozzle;
generation timing of a signal for changing the flow rate of the gas ejected from the second nozzle;
rising characteristics of the flow rate of the treatment liquid discharged from the first nozzle;
rising characteristics of the flow rate of the gas ejected from the second nozzle;
Falling characteristics of the flow rate of the treatment liquid ejected from the first nozzle;
Falling characteristics of the flow rate of the gas ejected from the second nozzle;
a speed at which the treatment liquid is sucked from the first nozzle toward the upstream side of the first supply channel after the ejection of the treatment liquid is stopped;
a position where the sucked treatment liquid stops;
a rotational speed of the substrate;
acceleration of the substrate;
change timing of the rotation speed of the substrate;
a position of the first nozzle;
a moving speed of the first nozzle;
acceleration of the first nozzle;
change timing of the position of the first nozzle;
change timing of the moving speed of the first nozzle;
a temperature for heating the substrate;
a position of the liquid receiver;
a moving speed of the liquid receiver;
acceleration of the liquid receiver;
timing of changing the position of the liquid receiver;
change timing of the movement speed of the liquid receiver;
differential pressure of the fan filter unit;
differential pressure across the valve;
a wind speed of the gas exhausted from the processing chamber;
an air volume of the gas exhausted from the processing chamber;
5. The correction method according to any one of claims 1 to 4, comprising at least one of: the amount of light in the processing chamber; A substrate processing apparatus for etching a substrate with a processing liquid,
setting at least one of the setting conditions of the substrate processing apparatus based on at least one of the execution conditions when the etching is executed and at least one characteristic amount indicating the execution result of the etching; A control unit that generates correction data to be corrected,
The control unit corrects the at least one setting condition based on the correction data before starting etching of the first substrate ,
The substrate processing apparatus, wherein the at least one feature amount includes at least one of an etching amount of a second substrate etched before the first substrate and uniformity of the etching amount. A substrate processing system comprising: a substrate processing apparatus for etching a substrate with a processing liquid; and a correction data generation apparatus for outputting correction data for correcting setting conditions of the substrate processing apparatus,
The correction data generation device, based on at least one execution condition among the execution conditions at the time of execution of the etching and at least one characteristic amount indicating the execution result of the etching, among the setting conditions of the substrate processing apparatus A control unit that generates correction data for correcting at least one setting condition of
The substrate processing apparatus corrects the at least one setting condition based on the correction data before starting etching of the first substrate ;
The substrate processing system, wherein the at least one feature amount includes at least one of an etching amount of a second substrate etched before the first substrate and an etching amount uniformity.

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