CN114724972A - Cleaning device and cleaning method - Google Patents

Cleaning device and cleaning method Download PDF

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Publication number
CN114724972A
CN114724972A CN202110188736.6A CN202110188736A CN114724972A CN 114724972 A CN114724972 A CN 114724972A CN 202110188736 A CN202110188736 A CN 202110188736A CN 114724972 A CN114724972 A CN 114724972A
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China
Prior art keywords
gas
cleaning
wafer
bearing table
control unit
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Pending
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CN202110188736.6A
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Chinese (zh)
Inventor
叶永全
徐嘉祥
王瑞僧
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Nanya Technology Corp
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Nanya Technology Corp
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Publication of CN114724972A publication Critical patent/CN114724972A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a cleaning device and a cleaning method. The shell is provided with an accommodating space. The bearing table is arranged in the shell and used for rotating the wafer placed on the bearing table. The cleaning liquid nozzle faces the wafer on the bearing table. The gas supply unit is arranged in the shell and used for pumping gas towards the bearing table. The air exhaust unit is used for exhausting air around the bearing table. The gas valve unit is used for controlling the gas flow of gas. Therefore, the cleaning device provided by the invention has the advantages that the air supply unit and the air valve unit are cooperated to efficiently pump away the cleaning liquid sprayed by the cleaning liquid nozzle, so that the defect of the wafer caused by the rebound of the cleaning liquid is avoided.

Description

Cleaning device and cleaning method
Technical Field
The present invention relates to a cleaning apparatus and a cleaning method, and more particularly, to a cleaning apparatus and a cleaning method for cleaning a wafer.
Background
Photoresists have been widely used in today's integrated circuit processing. Photoresist is typically sprayed and shaped by a coating apparatus onto the surface of a silicon wafer as it rotates.
During spin coating, the protective shield around the silicon wafer prevents sputtered photoresist from contaminating the surrounding environment. However, the protective cover prevents contamination and also easily causes pattern defects on the surface of the silicon wafer, which is more serious in the case of edge bead cleaning (novel ridge).
Therefore, how to provide a cleaning device capable of solving the above problems is one of the problems that the industry needs to invest in research and development resources to solve.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a cleaning device that can solve the above problems.
In order to achieve the above objects, according to one embodiment of the present invention, a cleaning apparatus includes a housing, a loading platform, a cleaning solution nozzle, an air supply unit, an air exhaust unit, and an air valve unit. The shell is provided with an accommodating space. The bearing table is arranged in the shell and used for rotating the wafer placed on the bearing table. The cleaning liquid nozzle faces the wafer on the bearing table. The gas supply unit is arranged in the shell and used for pumping gas towards the bearing table. The air exhaust unit is used for exhausting air around the bearing table. The air valve unit is used for controlling air flow.
In one or more embodiments of the invention, the housing includes an upper cup portion and a lower cup portion, wherein the upper cup portion and the lower cup portion surround the susceptor, and the evacuation unit evacuates gas along between the upper cup portion and the lower cup portion.
In one or more embodiments of the invention, the upper and lower cups together define an evacuation channel, wherein the evacuation channel surrounds the carrier.
In one or more embodiments of the present invention, the cleaning device further includes a control unit, wherein the control unit is electrically connected to the gas valve unit, and the control unit is configured to drive the gas valve unit to convert the first gas flow into a second different gas flow.
In one or more embodiments of the present invention, the cleaning apparatus further includes a control unit electrically connected to the carrier, and the control unit is configured to control the carrier to rotate so that the first rotation speed of the carrier is converted into a second different rotation speed.
In one or more embodiments of the present invention, the cleaning device further includes a control unit electrically connected to the carrier and the gas valve unit, and the control unit is configured to control the gas valve unit and the carrier simultaneously, so that the first rotation speed of the carrier is converted into the second rotation speed when the first gas flow of the gas is converted into the second gas flow.
In one or more embodiments of the invention, wherein the second airflow is greater than the first airflow and the second rotational speed is greater than the first rotational speed.
In one or more embodiments of the present invention, the cleaning apparatus further includes a control unit electrically connected to the cleaning liquid nozzle, wherein the control unit is configured to control the cleaning liquid nozzle to change a first spraying speed of the cleaning liquid nozzle to a second different spraying speed.
Another object of the present invention is to provide a cleaning method that can solve the above problems.
According to an embodiment of the present invention, there is provided a cleaning method including: providing a wafer positioned on the bearing table; rotating the wafer at a first rotation speed and coating a photoresist on the wafer; and after coating the photoresist, rotating the wafer at a second rotating speed and spraying cleaning liquid towards the edge of the wafer, wherein the first rotating speed is different from the second rotating speed.
In one or more embodiments of the present invention, the cleaning method further comprises: pumping gas with a first gas flow rate towards the bearing table while coating the photoresist; and pumping gas with a second gas flow rate towards the bearing table while spraying the cleaning liquid towards the edge or the back of the wafer, wherein the first gas flow rate is different from the second gas flow rate.
In summary, the present invention provides a cleaning apparatus and a cleaning method, which can adjust the rotation speed of the susceptor and the gas flow around the susceptor according to the usage status of the susceptor, so as to effectively process the wafer on the susceptor, and can effectively avoid additional defects caused by the back-splash of the liquid and/or solution to the photoresist on the surface of the wafer during the process of rotating and cleaning the wafer by adjusting the gas valve unit properly.
The foregoing is merely illustrative of the problems to be solved, solutions to problems, and effects produced by the present invention, and specific details thereof are set forth in the following description and the related drawings.
Drawings
To the accomplishment of the foregoing and related ends, the principles briefly described above will be explained in more detail with reference to embodiments, illustrated in the accompanying drawings. The drawings are only for purposes of illustrating the invention and are not to be construed as limiting the scope of the invention. The principles of the present invention will be clearly explained with reference to the accompanying drawings, in which:
FIG. 1 depicts a schematic view of a cleaning apparatus according to one or more embodiments of the invention;
FIG. 2 illustrates a block diagram of a cleaning apparatus, according to one or more embodiments of the present disclosure; and
FIG. 3 is a diagram illustrating steps in a cleaning method according to one or more embodiments of the invention.
Description of the main reference numerals:
100-cleaning device, 110-housing, 111-upper cup portion, 113-lower cup portion, 120-carrier, 130-cleaning liquid nozzle, 140-air supply unit, 150-air draft channel, 160-air valve unit, 170-control unit, 180-air draft unit, 190-recovery channel, 200-cleaning method, 210, 230, 250-steps, F-gas, P-spray path, R1-spindle, W-wafer.
Detailed Description
In the following description, numerous implementation details are set forth in order to provide a thorough understanding of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, some conventional structures and components are shown in simplified schematic form in the drawings for the sake of simplifying the drawings.
Referring to fig. 1, fig. 1 is a schematic diagram of a cleaning apparatus 100. The washing device 100 of the present invention includes a housing 110, a loading stand 120, a washing liquid nozzle 130, air supply units 140 and 150, an air valve unit 160, and an air draft unit 180. The housing 110 has an accommodating space. The susceptor 120 is disposed in the housing 110 and is used for rotating the wafer W placed on the susceptor 120. The cleaning solution nozzle 130 faces the edge or the back of the wafer W on the susceptor 120. The gas supply unit 140 is disposed in the housing 110 and pumps the gas F toward the susceptor 120. The pumping unit 180 (e.g., a pumping fan) is used to pump the gas F around the susceptor 120. The gas valve unit 160 is used to control the flow rate of the gas F. Therefore, when the cleaning device 100 of the present invention rotates and cleans the edge or the back of the wafer W, the air supply unit 140, the air valve unit 160 and/or the air exhaust unit 180 are used to control the air flow of the gas F in the housing 110, so as to effectively prevent the cleaning solution from rebounding to the photoresist on the upper surface of the wafer W after the photoresist is coated on the wafer W, thereby reducing unnecessary defects generated on the wafer W in the semiconductor process and further improving the process yield, but the present invention is not limited thereto.
In one or more embodiments of the present invention, the accommodating space of the housing 110 is separated from the outside, and mainly the air supply unit 140 and the air draft unit 180 cooperate to disturb the flow of air (e.g., gas F) in the housing 110. The housing 110 includes an upper cup portion 111 and a lower cup portion 113 at least partially disposed in the housing 110, wherein the upper cup portion 111 and the lower cup portion 113 surround the susceptor 120, and the pumping unit 180 pumps the gas F along a space between the upper cup portion 111 and the lower cup portion 113. In addition, the upper and lower cups 114, 113 together define an exhaust channel 150 that surrounds the carrier 120. That is, the gas F is pumped out from the periphery of the susceptor 120 to the pumping unit 180 along the pumping channel 150. In addition, the upper cup portion 111 has a central through hole 111a, and the central through hole 111a is aligned with the susceptor 120 from above and with the wafer W thereon, so that a user can easily apply a photoresist on the wafer W.
In one or more embodiments of the invention, the susceptor 120 includes an actuator (e.g., an electric motor), and the susceptor 120 is driven by the actuator to rotate around the rotation axis R1, so that the susceptor 120 can further drive the wafer W on the susceptor 120 to rotate, but the invention is not limited thereto. Specifically, the gas supply unit 140 includes a device or structure for generating the gas F, for example, the gas supply unit 140 includes a fan to pump the gas F to the susceptor 120 and the wafer W.
In one or more embodiments of the present invention, the air valve unit 160 may be disposed between the upper cup portion 111 and the lower cup portion 113, that is, the air valve unit 160 is disposed in the ventilation channel 150, but the present invention is not limited thereto. In practice, the user controls the state (e.g., open/close state) of the gas valve unit 160, which in turn affects the gas flow rate of the gas F around the susceptor 120 and the wafer W and the gas flow rate of the gas F passing through the pumping channel 150 between the upper cup 111 and the lower cup 113.
In one or more embodiments of the invention, the cleaning apparatus 100 further includes a recycling channel 190, the recycling channel 190 is connected to the pumping channel 150, and the gas F is carried away from the susceptor 120 and the cleaning solution and/or solution on the wafer W and recycled to the recycling channel 190. In addition, the recovery channel 190 has one or more lines connected to the liquid recovery tank to facilitate recovery and containing the cleaning liquid and/or solution, which is not limited by the present invention.
Specifically, the ventilation unit 180 is disposed in the recycling channel 190, so that the ventilation unit 180 can effectively draw the gas F, the cleaning solution and/or the solution from the periphery of the susceptor 120 through the ventilation channel 150 and the recycling channel 190. In addition, the ventilator unit 180 may be disposed between the upper cup 111 and the lower cup 113, that is, the ventilator unit 180 is disposed in the ventilation channel 150 to effectively exhaust the gas F, the cleaning solution and/or the solution from the periphery of the susceptor 120, but the invention is not limited thereto.
In one or more embodiments of the present invention, the cleaning solution nozzle 130 may be connected to a pump body, and one or more pipelines may be connected between the cleaning solution nozzle 130 and the pump body, the pump body may contain the cleaning solution, and the pipelines may draw and transport the cleaning solution in the pump body, wherein the pump body is configured to drive the contained cleaning solution and transport the cleaning solution to the cleaning solution nozzle 130 through the pipeline, so that the cleaning solution nozzle 130 sprays the cleaning solution toward the wafer W (e.g., the edge and/or the back of the wafer W) on the susceptor 120. Specifically, the pump body may be, for example, an electromagnetic pump, and the cleaning solution nozzle 130 may be disposed at a side of or below the susceptor 120, so that the cleaning solution nozzle 130 sprays the cleaning solution toward the edge and/or the backside of the wafer W along the spraying path P, but the invention is not limited thereto.
In addition, the cleaning solution sprayed from the cleaning solution nozzle 130 may include, for example, deionized water, diluted ammonia solution (NH)4OH), hydrochloric acid-hydrogen peroxide mixed solution (SC1), hydrochloric acid-hydrogen peroxide mixed solution (SC2), ozone deionized water (DIWO)3) Sulfuric acid and hydrogen peroxide mixed Solution (SPM), sulfuric acid ozone mixed Solution (SOM), phosphoric acid (H)3PO4) Or a Diluted hydrofluoric acid solution (DHF), but the invention is not limited thereto.
Referring to fig. 1 and 2, fig. 2 is a block diagram of the cleaning apparatus 100. In one or more embodiments of the invention, the cleaning apparatus 100 further includes a control unit 170, wherein the control unit 170 is electrically connected to the gas valve unit 160, and the control unit 170 is configured to drive the gas valve unit 160 to change the first gas flow of the gas F around the susceptor 120 into a second gas flow when the cleaning solution is sprayed toward the edge and/or the back of the wafer W by the cleaning easy nozzle 130 after the photoresist is coated on the wafer W.
Specifically, the gas valve unit 160 is an electronic gas valve, and the state of the gas valve unit 160 can change the flow rate of the gas F inside the housing 110. In one or more embodiments of the invention, the first air flow is between 1.2m3Min to 2m3Between/min (e.g. 2 m)3Min) and the second air flow is between 2m3/min to 2.6m3Between/min (e.g. 2.3 m)3In/min). In other embodiments of the invention, the first flow rate is between 2m3Min to 2.6m3Between/min (e.g. 2.3 m)3/min) and the second air flow is between 1.2m3Min to 2m3Between/min (e.g. 2 m)3Min), the invention is not limited to this. In all embodiments of the present invention, the first and second air flow rates are not 0m3And/min. The control unit 170 may include a Central Processing Unit (CPU), a controller or other computing devices with computing functions, and the control unit 170 may cooperate with software, firmware or other hardware to assist in controlling the gas valve unit 160 and further control the flow rate of the gas F, which is not limited in the present invention.
In one or more embodiments of the present invention, the control unit 170 of the cleaning device 100 is electrically connected to the carrier 120 (e.g., an actuator of the carrier 120), wherein the control unit 170 is configured to control a rotation condition of the carrier 120, so that the first rotation speed of the carrier 120 is converted into a second rotation speed different from the first rotation speed. In one or more embodiments of the invention, the first rotation speed is between 1500rpm and 2500rpm (e.g., 2000rpm), and the second rotation speed is between 2500rpm and 3500rpm (e.g., 3000 rpm). In addition, the carrier 120 is changed from the first rotation speed to the second rotation speed with an acceleration between 300rpm/s and 800 rpm/s. More preferably, the acceleration of the susceptor 120 is 500 rpm/s. In some other embodiments of the present invention, the first rotation speed is between 2500rpm and 3500rpm (for example, 3000rpm), and the second rotation speed is between 1500rpm and 2500rpm (for example, 2000rpm), which is not limited herein. In all embodiments of the present invention, the first rotation speed and the first rotation speed are not 0 rpm.
In one or more embodiments of the present invention, the control unit 170 is electrically connected to the susceptor 120 and the gas valve unit 160, and the control unit 170 is configured to control the susceptor 120 and the gas valve unit 160 simultaneously, so as to convert the first gas flow of the gas F into a second different gas flow and convert the first rotation speed of the susceptor 120 into a second different rotation speed. Specifically, the second airflow is greater than the first airflow, and the second rotation speed is greater than the first rotation speed, which is not limited in the disclosure. In still other embodiments, the first airflow is greater than the second airflow and the first rotational speed is greater than the second rotational speed.
In one or more embodiments of the present invention, the control unit 170 of the cleaning apparatus 100 is electrically connected to the electromagnetic pump of the cleaning solution nozzle 130, so as to control the spraying speed of the cleaning solution nozzle 130 spraying the cleaning solution or control the on/off of the cleaning easy nozzle 130. For example, the control unit 170 is used to control the cleaning solution nozzle 130 to change a first spraying speed of the cleaning solution nozzle 130 spraying the cleaning solution to a second spraying speed different from the first spraying speed, wherein the first spraying speed is greater than the second spraying speed, but the invention is not limited thereto. In other embodiments of the present invention, the second spraying rate may be greater than the first spraying rate. It should be noted that in all embodiments of the present invention, the first spraying speed and the second spraying speed of the cleaning solution nozzle 130 are not equal to zero.
Referring to fig. 3, fig. 3 is a diagram illustrating a step of the cleaning method 200. In one or more embodiments of the invention, the cleaning method 200 begins with step 210, wherein step 210 provides a wafer on a susceptor. The cleaning method 200 then proceeds to step 230, where step 230 includes rotating the wafer at a first rotational speed and applying a photoresist to the wafer. The cleaning method 200 then proceeds to step 250, wherein step 250 is continued after step 230, and step 250 includes rotating the wafer at a second rotational speed and spraying a cleaning liquid toward the edge and/or the back of the wafer, wherein the first rotational speed is different from the second rotational speed. Specifically, the cleaning method 200 may be used with the cleaning apparatus 100 of the present invention to clean a wafer, and the photoresist may be formed on the wafer by Spin on coating (Spin on coating), but the present invention is not limited thereto.
In one or more embodiments of the invention, step 230 of the cleaning method 200 further comprises: while coating the photoresist, pumping the gas of the first gas flow rate toward the susceptor and the wafer above the susceptor. In addition, step 250 of the cleaning method 200 further comprises: and pumping gas with a second gas flow rate towards the bearing table and the wafer above the bearing table while spraying cleaning liquid towards the edge and/or the back of the wafer, wherein the first gas flow rate is different from the second gas flow rate.
In one or more embodiments of the invention, the first rotation speed is between 1500rpm and 2500rpm (e.g., 2000rpm), and the second rotation speed is between 2500rpm and 3500rpm (e.g., 3000 rpm). In other embodiments of the present invention, the first rotation speed is between 2500rpm and 3500rpm (for example, 3000rpm), and the second rotation speed is between 1500rpm and 2500rpm (for example, 2000rpm), which is not intended to limit the present invention.
In one or more embodiments of the invention, the first air flow is between 1.2m3Min to 2m3Between/min (e.g. 2 m)3Min) and the second air flow is between 2m3Min to 2.6m3Between/min (e.g. 2.3 m)3In/min). In other embodiments of the invention, the first flow rate is between 2m3Min to 2.6m3Between/min (e.g. 2.3 m)3/min) and the second air flow is between 1.2m3Min to 2m3Between/min (e.g. 2 m)3Min), the invention is not limited to this.
The cleaning method 200 can be performed by the cleaning apparatus 100 in the present invention, wherein various details regarding the cleaning apparatus 100 are described in the previous paragraphs, and thus, are not repeated herein.
In summary, the present invention provides a cleaning apparatus and a cleaning method, which can adjust the rotation speed of the susceptor and the gas flow around the susceptor according to the usage status of the susceptor, so as to effectively process the wafer on the susceptor, and can effectively avoid additional defects caused by the back-splash of the liquid and/or solution to the photoresist on the surface of the wafer during the process of rotating and cleaning the wafer by adjusting the gas valve unit properly.
While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. Many variations of embodiments of the invention are possible in light of the disclosure herein without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments.

Claims (10)

1. A cleaning device, comprising:
a housing having an accommodating space;
the bearing table is arranged in the shell and used for rotating the wafer placed on the bearing table;
the cleaning solution nozzle faces the wafer on the bearing table;
the gas supply unit is arranged in the shell and used for pumping gas towards the bearing table;
the air extracting unit is used for extracting the air around the bearing table; and
and the gas valve unit is used for controlling the gas flow of the gas.
2. The cleaning apparatus defined in claim 1, wherein the housing comprises an upper cup portion and a lower cup portion, wherein the upper cup portion and the lower cup portion surround the carrier, and wherein the evacuation unit evacuates the gas along between the upper cup portion and the lower cup portion.
3. The cleaning apparatus defined in claim 2, wherein the upper cup portion and the lower cup portion together define an evacuation channel, wherein the evacuation channel surrounds the carrier.
4. The cleaning apparatus defined in claim 1, further comprising a control unit, wherein the control unit is electrically connected to the gas valve unit, and the control unit is configured to drive the gas valve unit to convert the first flow rate of the gas into a second, different flow rate of the gas.
5. The cleaning apparatus as claimed in claim 1, further comprising a control unit electrically connected to the carrier, wherein the control unit is configured to control the carrier to rotate such that the first rotation speed of the carrier is converted into a second different rotation speed.
6. The cleaning apparatus as claimed in claim 1, further comprising a control unit electrically connected to the carrier and the gas valve unit, wherein the control unit is configured to control the gas valve unit and the carrier simultaneously such that the first rotational speed of the carrier is changed to a second rotational speed when the first gas flow of the gas is changed to a second different gas flow.
7. The cleaning apparatus defined in claim 6, wherein the second airflow is greater than the first airflow and the second rotational speed is greater than the first rotational speed.
8. The cleaning apparatus as claimed in claim 1, further comprising a control unit electrically connected to the cleaning liquid nozzle, wherein the control unit is configured to control the cleaning liquid nozzle to change a first spraying speed of the cleaning liquid nozzle to a second different spraying speed.
9. A method of cleaning, comprising:
providing a wafer positioned on the bearing table;
rotating the wafer at a first rotating speed and coating a photoresist on the wafer; and
after coating the photoresist, rotating the wafer at a second rotating speed and spraying cleaning liquid towards the edge or the back of the wafer, wherein the first rotating speed is different from the second rotating speed.
10. The cleaning method of claim 9, further comprising:
pumping gas with a first gas flow rate towards the bearing table while coating the photoresist; and
and pumping gas with a second gas flow rate towards the bearing table while spraying cleaning liquid towards the edge or the back of the wafer, wherein the first gas flow rate is different from the second gas flow rate.
CN202110188736.6A 2021-01-04 2021-02-19 Cleaning device and cleaning method Pending CN114724972A (en)

Applications Claiming Priority (2)

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TW110100155 2021-01-04
TW110100155A TWI770753B (en) 2021-01-04 2021-01-04 Rinsing device and rinsing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115475794A (en) * 2022-10-10 2022-12-16 安徽光智科技有限公司 Lens cleaning method

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Publication number Priority date Publication date Assignee Title
JP5833046B2 (en) * 2013-03-12 2015-12-16 東京エレクトロン株式会社 Substrate liquid processing apparatus and air flow abnormality detection method
JP7056746B2 (en) * 2018-09-10 2022-04-19 東京エレクトロン株式会社 Coating film forming method and coating film forming device
JP7202901B2 (en) * 2019-01-18 2023-01-12 東京エレクトロン株式会社 Coating film forming method and coating film forming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115475794A (en) * 2022-10-10 2022-12-16 安徽光智科技有限公司 Lens cleaning method

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TW202227198A (en) 2022-07-16

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