JP2020194946A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

To provide a substrate processing method capable of improving etching efficiency.SOLUTION: A substrate processing method includes a substrate holding step S102, a liquid film forming step S112, a paddle step S114, an etching solution discharging step S116, and an etching solution replenishment step S118. In the liquid film forming step S112, a liquid film L of an etching solution is formed. In the paddle step S114, the rotation speed of a substrate W is set as first rotation speed R1, or the rotation of the substrate W is stopped. In the etching solution discharging step S116, the rotation speed of the substrate W is set as second rotation speed R2 which is larger than the first rotation speed R1, and the thickness of the liquid film L is reduced. In the etching solution replenishment step S118, following the etching solution discharging step S116, the rotation speed of the substrate W is set as third rotation speed R3 which is smaller than the second rotation speed R2, or the rotation of the substrate W is stopped, and the etching solution is supplied to the upper surface Wa of the substrate W to increase the thickness of the liquid film.SELECTED DRAWING: Figure 5

Description

The present invention relates to a substrate processing method and a substrate processing apparatus.

Patent Document 1 discloses a substrate processing apparatus that etches a polysilicon film formed on a substrate by supplying an etching solution to the substrate.

Japanese Unexamined Patent Publication No. 2013-258391

In the substrate processing apparatus described in Patent Document 1, as the etching progresses, the etching solution reacts with the substrate and substances on the substrate, so that the concentration of the etching solution decreases and the performance of the etching solution deteriorates. Therefore, as the etching progresses, the etching efficiency may deteriorate.

Further, due to the interaction between the etching solution and the atmosphere around the etching solution, oxygen contained in the atmosphere may dissolve in the etching solution and deteriorate the etching solution. By continuing to supply the etching solution to the substrate, it is possible to keep the etching solution on the substrate in a fresh state to some extent. However, in order to replace the deteriorated etching solution on the substrate with a fresh etching solution, it is necessary to continue to supply a large amount of the etching solution to the substrate, and the consumption of the etching solution becomes enormous.

The present invention has been made in view of the above problems, and an object of the present invention is to efficiently replace a deteriorated etching solution with a fresh etching solution on a substrate while suppressing the consumption of the etching solution. An object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of improving etching efficiency.

The substrate processing method according to the present invention includes a substrate holding step, a liquid film forming step, a paddle step, an etching solution discharging step, and an etching solution replenishing step. In the substrate holding step, the substrate is held horizontally. In the liquid film forming step, an etching solution is supplied to the upper surface of the substrate to form a liquid film of the etching solution covering the upper surface of the substrate. In the paddle step, the rotation speed of the substrate is set to the first rotation speed, or the rotation of the substrate is stopped. In the etching solution discharge step, the rotation speed of the substrate is set to a second rotation speed higher than the first rotation speed, and the thickness of the liquid film is reduced. In the etching solution replenishment step, following the etching solution discharge step, the rotation speed of the substrate is set to a third rotation speed smaller than the second rotation speed, or the rotation of the substrate is stopped and the upper surface of the substrate is stopped. Is supplied with the etching solution to increase the thickness of the liquid film.

In a certain embodiment, in the etching solution replenishment step, the etching solution is intermittently supplied to the upper surface of the substrate.

In a certain embodiment, the etching solution discharge step and the etching solution replenishment step are repeated.

In certain embodiments, the substrate processing method further comprises a space forming step. In the space forming step, prior to the liquid film forming step, the upper part of the substrate is closed by the lid portion to form a processing space for processing the substrate.

In certain embodiments, the substrate processing method further comprises a gas supply step. In the gas supply step, gas is supplied to the processing space.

In a certain embodiment, in the gas supply step, an oxygen-free gas is supplied to the processing space, and the oxygen concentration is lowered as compared with the outside of the processing space.

In a certain embodiment, the state in which the liquid film is formed on the upper surface of the substrate is maintained in the paddle step, the etching solution discharging step, and the etching solution replenishing step.

In certain embodiments, the first rotation speed is 100 rpm or less. The second rotation speed is 200 rpm or more. The third rotation speed is 100 rpm or less.

In certain embodiments, the etching solution is a liquid that causes an exothermic reaction with the substrate.

In certain embodiments, the etching solution comprises an aqueous solution of tetramethylammonium hydroxide or nitric acid.

The substrate processing apparatus according to the present invention includes a substrate holding unit, a substrate rotating unit, an etching solution supply unit, and a control unit. The substrate holding portion holds the substrate horizontally. The substrate rotating portion rotates the substrate and the substrate holding portion integrally. The etching solution supply unit supplies the etching solution to the substrate. The control unit controls the substrate rotating unit and the etching solution supply unit. The control unit controls the substrate holding unit so as to hold the substrate horizontally. The control unit controls the etching solution supply unit so as to supply the etching solution to the upper surface of the substrate to form a liquid film of the etching solution covering the upper surface of the substrate. The control unit controls the substrate rotation unit so that the rotation speed of the substrate becomes the first rotation speed or the rotation of the substrate is stopped. The control unit controls the substrate rotation speed so that the rotation speed of the substrate becomes a second rotation speed higher than the first rotation speed to reduce the thickness of the liquid film. After reducing the thickness of the liquid film, the control unit continues to make the rotation speed of the substrate a third rotation speed smaller than the second rotation speed, or stop the rotation of the substrate. The etching solution supply unit is controlled so as to control the substrate rotating portion and supply the etching solution to the upper surface of the substrate to increase the thickness of the liquid film.

In certain embodiments, the control unit rotates the substrate so that the rotation speed of the substrate becomes the third rotation speed or the rotation of the substrate is stopped after the thickness of the liquid film is reduced. When the etching solution supply unit is controlled so as to control the unit and supply the etching solution to the upper surface of the substrate to increase the thickness of the liquid film, the etching solution is intermittently supplied to the upper surface of the substrate. The etching solution supply unit is controlled so as to supply to.

In a certain embodiment, the control unit controls the substrate rotation speed so that the rotation speed of the substrate becomes the second rotation speed to reduce the thickness of the liquid film, and reduces the thickness of the liquid film. After the reduction, the rotation speed of the substrate is continuously controlled to be the third rotation speed, or the rotation portion of the substrate is controlled so as to stop the rotation of the substrate, and the etching on the upper surface of the substrate. The etching liquid supply unit is repeatedly controlled so as to supply the liquid and increase the thickness of the liquid film.

In certain embodiments, the substrate processing apparatus further comprises a lid portion and a moving portion. The lid portion closes the upper part of the substrate and forms a processing space for processing the substrate. The moving portion moves the lid portion. The control unit controls the moving unit so that the processing space is formed.

In certain embodiments, the substrate processing apparatus further comprises a gas supply unit that supplies gas to the processing space.

In certain embodiments, the gas supply unit supplies an oxygen-free gas to the processing space.

In a certain embodiment, when the control unit controls the substrate rotation unit so that the rotation speed of the substrate becomes the first rotation speed or stops the rotation of the substrate, the liquid film causes the liquid film. The substrate rotating portion is controlled so as to maintain the state formed on the upper surface of the substrate. The control unit controls the substrate rotation unit so that the rotation speed of the substrate becomes the second rotation speed, and when the thickness of the liquid film is reduced, the liquid film is formed on the upper surface of the substrate. The substrate rotating portion is controlled so as to maintain the state. After reducing the thickness of the liquid film, the control unit controls the substrate rotation unit so that the rotation speed of the substrate becomes the third rotation speed or stops the rotation of the substrate. Further, when the etching solution supply unit is controlled so as to supply the etching solution to the upper surface of the substrate to increase the thickness of the liquid film, the state in which the liquid film is formed on the upper surface of the substrate is maintained. The substrate rotating portion is controlled in this way.

In certain embodiments, the first rotation speed is 100 rpm or less. The second rotation speed is 200 rpm or more. The third rotation speed is 100 rpm or less.

In certain embodiments, the etching solution is a liquid that causes an exothermic reaction with the substrate.

In certain embodiments, the etching solution comprises an aqueous solution of tetramethylammonium hydroxide or nitric acid.

According to the substrate processing method according to the present invention, the etching efficiency can be improved.

It is a schematic plan view which shows the substrate processing system. It is a schematic cross section which shows a substrate processing apparatus. It is a block diagram of the substrate processing apparatus which concerns on Embodiment 1 of this invention. It is a flowchart which shows the substrate processing method which concerns on Embodiment 1. It is a flowchart which shows the substrate processing method which concerns on Embodiment 1. It is a schematic diagram of a substrate and a liquid film. It is a figure for demonstrating an example of a substrate processing method. It is a figure for demonstrating another example of a substrate processing method. It is a figure for demonstrating another example of a substrate processing method. It is a schematic cross-sectional view which shows the substrate processing apparatus which concerns on Embodiment 2. It is a schematic side view which shows the processing liquid supply part. It is a schematic cross-sectional view which shows the substrate processing apparatus which concerns on Embodiment 3. It is a flowchart which shows the substrate processing method which concerns on Embodiment 3.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the figure, the same corresponding parts are designated by the same reference numerals and the description is not repeated. Further, in the embodiment of the present invention, the X-axis, the Y-axis, and the Z-axis are orthogonal to each other, the X-axis and the Y-axis are parallel in the horizontal direction, and the Z-axis is parallel in the vertical direction.

[Embodiment 1]
The substrate processing system 100 according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. The substrate processing system 100 processes the substrate W. The substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask. Substrates, ceramic substrates, or solar cell substrates. The substrate W has, for example, a substantially disk shape.

First, the substrate processing system 100 will be described with reference to FIG. FIG. 1 is a schematic plan view showing a substrate processing system 100. As shown in FIG. 1, the substrate processing system 100 has an indexer unit U1 and a processing unit U2. The indexer unit U1 includes a plurality of substrate containers C and an indexer robot IR. The processing unit U2 includes a plurality of substrate processing devices 1, a component liquid cabinet 100A, a transfer robot CR, and a delivery unit PS. The component liquid cabinet 100A houses the treatment liquid. Each of the plurality of substrate processing devices 1 includes a processing liquid supply unit 9. The processing liquid in the component liquid cabinet 100A is supplied to the corresponding substrate processing device 1 by any of the processing liquid supply units 9. Details of the treatment liquid supply unit 9 will be described later with reference to FIG.

Each of the substrate accommodators C accommodates a plurality of substrates W in a laminated manner. The indexer robot IR takes out the unprocessed substrate W from one of the plurality of substrate containers C and passes the substrate W to the delivery unit PS. Then, the substrate W taken out from the substrate container C is placed on the delivery portion PS. The transfer robot CR receives the unprocessed substrate W from the delivery unit PS, and carries the substrate W into any one of the plurality of substrate processing devices 1.

Then, the substrate processing apparatus 1 processes the unprocessed substrate W. The substrate processing device 1 is a single-wafer type that processes substrates W one by one. In the first embodiment, the substrate processing apparatus 1 processes the substrate W with the processing liquid. Specifically, for example, the substrate processing apparatus 1 etches the substrate W with an etching solution.

After the processing by the substrate processing apparatus 1, the transfer robot CR takes out the processed substrate W from the substrate processing apparatus 1 and passes the substrate W to the delivery unit PS. Then, the processed substrate W processed by the substrate processing apparatus 1 is placed on the delivery unit PS. The indexer robot IR receives the processed substrate W from the delivery unit PS, and then accommodates the substrate W in any of the plurality of substrate containers C.

Next, the substrate processing apparatus 1 will be described with reference to FIG. FIG. 2 is a schematic cross section showing the substrate processing apparatus 1. As shown in FIG. 2, the substrate processing apparatus 1 includes a chamber 3, a substrate holding portion 5, a substrate rotating portion 7, a processing liquid supply unit 9, a plurality of cup portions 11, and a plurality of cup moving mechanisms 15. , A discharge port 17, a shielding portion 19, and a shielding portion operating mechanism 21.

The chamber 3 has a substantially box shape. The chamber 3 has a top plate portion 3a. The chamber 3 houses a substrate holding portion 5, a substrate rotating portion 7, a processing liquid supply portion 9, a plurality of cup portions 11, a shielding portion 19, and a shielding portion operating mechanism 21.

The substrate holding portion 5 holds the substrate W horizontally. Specifically, the substrate holding portion 5 has a spin base 51 and a plurality of chuck members 53. The plurality of chuck members 53 are provided on the spin base 51. The plurality of chuck members 53 hold the substrate W in a horizontal posture. The spin base 51 has a substantially disk shape and supports a plurality of chuck members 53 in a horizontal posture.

The substrate rotating portion 7 integrally rotates the substrate W and the substrate holding portion 5 around the central axis AX. The central axis AX extends along the Z-axis direction. In other words, the central axis AX extends along the vertical direction. The central axis AX extends in the vertical direction of the substrate W. Specifically, the substrate rotating portion 7 has a motor 71 and a shaft 73. The shaft 73 is coupled to the spin base 51. The motor 71 rotates the spin base 51 around the central axis AX via the shaft 73. As a result, the substrate W held by the plurality of chuck members 53 rotates about the central axis AX.

The processing liquid supply unit 9 supplies the processing liquid to the substrate W. The chemical solution is, for example, DHF (dilute hydrofluoric acid), a polymer removing solution or an etching solution. The etching solution is, for example, a liquid that causes an exothermic reaction with the substrate. The etching solution contains, for example, tetramethylammonium hydroxide aqueous solution (TMAH) or fluorinated nitric acid. In the present embodiment, the processing liquid supply unit 9 supplies the etching liquid to the substrate W. Specifically, the treatment liquid supply unit 9 has a treatment liquid nozzle 91 and a treatment liquid supply mechanism 93. The treatment liquid supply mechanism 93 is connected to the treatment liquid nozzle 91 and supplies the treatment liquid to the treatment liquid nozzle 91. The processing liquid supply mechanism 93 includes a valve V1, a flow rate adjusting valve V2, a pump Pa, a tank 94, and a pipe P1. The treatment liquid flows through the treatment liquid nozzle 91. Then, the processing liquid nozzle 91 discharges the processing liquid toward the upper surface Wa of the substrate W while the substrate W is rotating. The processing liquid supply unit 9 corresponds to an example of the “etching liquid supply unit”.

The pipe P1 is connected to the processing liquid nozzle 91. The pipe P1 supplies the processing liquid to the processing liquid nozzle 91.

The start and stop of supply of the treatment liquid to the treatment liquid nozzle 91 is switched by the valve V1. Specifically, the valve V1 is an on-off valve and can be switched between an open state and a closed state. The open state is a state in which the processing liquid flowing in the pipe P1 is passed toward the processing liquid nozzle 91. The closed state is a state in which the supply of the processing liquid from the pipe P1 to the processing liquid nozzle 91 is stopped.

The flow rate adjusting valve V2 adjusts the flow rate of the processing liquid supplied to the processing liquid nozzle 91. When the valve V1 is opened, the processing liquid is supplied from the pipe P1 to the processing liquid nozzle 91 at a flow rate corresponding to the opening degree of the flow rate adjusting valve V2. As a result, the processing liquid is discharged from the processing liquid nozzle 91. The opening degree indicates the degree to which the flow rate adjusting valve V2 is open.

The tank 94 contains the treatment liquid. The pump Pa sends the processing liquid in the tank 94 to the pipe P1.

Each of the plurality of cup portions 11 receives the processing liquid scattered from the substrate W. The plurality of cup portions 11 are arranged around the substrate holding portion 5 and have a shape that is rotationally symmetric with respect to the central axis AX. For example, each of the plurality of cup portions 11 has a substantially cylindrical shape.

Each of the plurality of cup portions 11 rises or falls between the liquid receiving position and the retracting position. The liquid receiving position indicates a position where the cup portion 11 faces the substrate W in the radial direction RD. When the cup portion 11 is located at the liquid receiving position, the cup portion 11 receives the processing liquid scattered from the substrate W. The radial direction RD indicates the radial direction with respect to the central axis AX and is orthogonal to the central axis AX. On the other hand, the evacuation position indicates a position below the liquid receiving position.

Specifically, when the substrate W is treated with the treatment liquid, at least one cup portion 11 is located at the liquid receiving position. Then, the substrate W is rotated integrally with the substrate holding portion 5, and the processing liquid is supplied from the processing liquid nozzle 91 to the upper surface Wa of the substrate W. The treatment liquid flows along the upper surface Wa of the substrate W by the centrifugal force due to the rotation of the substrate W, and is scattered from the edge portion of the substrate W toward the outer side of the radial RD. The cup portion 11 receives the processing liquid scattered from the edge portion of the substrate W. Then, the treatment liquid flows down along the inner wall surface 110 of the cup portion 11 and is discharged from the discharge port 17.

The plurality of cup moving mechanisms 15 are arranged corresponding to the plurality of cup portions 11, respectively. The cup moving mechanism 15 raises or lowers the corresponding cup portion 11 between the liquid receiving position and the retracting position. The cup moving mechanism 15 includes, for example, an electric motor and a ball screw.

The shielding portion 19 faces the upper surface Wa of the substrate W in the axial direction AD. Then, the shielding portion 19 covers the entire upper surface Wa of the substrate W and shields the upper part of the substrate W. Axial direction AD indicates a direction parallel to the central axis AX. Axial AD extends along the Z-axis direction. In other words, the axial AD extends along the vertical direction. The shielding portion 19 corresponds to an example of the “lid portion”.

The shielding portion 19 has a shielding plate 19a, a shaft portion 19b, and a hole portion Sb formed in a substantially central portion of the shielding plate 19a. The shielding plate 19a extends outward in the radial direction with the central axis AX as the center. The shielding plate 19a has a substantially disk shape. The shielding plate 19a faces the upper surface Wa of the substrate W in the axial direction AD. Then, the shielding plate 19a covers the entire upper surface Wa of the substrate W and shields the upper side of the substrate W. The shaft portion 19b is fixed to the shielding plate 19a. The shaft portion 19b rotates with the shielding plate 19a around the central axis AX. The shaft portion 19b is, for example, substantially cylindrical. The hole portion Sb penetrates the shaft portion 19b and the shielding plate 19a and extends along the central axis AX. The treatment liquid nozzle 91 is arranged in the hole Sb. The shielding plate 19a is arranged so that the center of the hole Sb substantially coincides with the central axis AX.

The shielding unit operating mechanism 21 has a holding unit 61 and an elevating mechanism 62. The holding portion 61 is a rod-shaped arm extending substantially horizontally. One end of the holding portion 61 is connected to the shielding plate 19a, and the other end is connected to the elevating mechanism 62. The shielding unit operating mechanism 21 corresponds to an example of a “moving unit”.

The shielding portion operating mechanism 21 raises or lowers the shielding portion 19 in the vertical direction along the axial direction AD. Specifically, the shielding portion operating mechanism 21 raises or lowers the shielding portion 19 in the vertical direction between the proximity position and the retracted position. The proximity position indicates a position where the shielding portion 19 descends and approaches the upper surface Wa of the substrate W at a predetermined interval. In FIG. 2, the shielding portion 19 is located at a close position. The retracted position is above the proximity position and indicates a position where the shielding portion 19 rises and is separated from the substrate W. When the substrate W is treated with the processing liquid, the shielding portion operating mechanism 21 moves the shielding portion 19 to a close position.

Specifically, the shielding unit operating mechanism 21 has a holding unit 61 and an elevating mechanism 62. The elevating mechanism 62 raises or lowers the shielding portion 19B together with the holding portion 61. The elevating mechanism 62 includes, for example, an electric motor and a ball screw. The shielding unit operating mechanism 21 includes, for example, an electric motor and a ball screw.

The shielding plate 19a of the shielding portion 19 may rotate. When the shielding plate 19a rotates, the shielding portion operating mechanism 21 has a shielding portion rotating mechanism. The shielding portion rotation mechanism rotates the shielding portion 19 around the central axis AX. Specifically, the shielding unit rotating mechanism rotates the shielding unit 19 synchronously with the substrate holding unit 5. Synchronous rotation indicates that it rotates in the same direction as the substrate holding portion 5 at the same rotation speed. The shield rotation mechanism includes, for example, an electric motor.

The substrate processing device 1 may further include a gas supply mechanism 22 and a fan filter unit 24. The chamber 3 houses the gas supply mechanism 22.

The gas supply mechanism 22 supplies gas to the hole Sb. The gas is, for example, a gas containing no oxygen. The gas is, for example, an inert gas such as nitrogen. The gas supply mechanism 22 includes a valve V3, a flow rate adjusting valve V4, a pump Pb, a tank 22a, and a pipe P2. The gas supply mechanism 22 corresponds to an example of a “gas supply unit”.

The pipe P2 is connected to the hole Sb. The pipe P2 supplies gas to the hole Sb.

The start and stop of gas supply to the hole Sb is switched by the valve V3. Specifically, the valve V3 is an on-off valve and can be switched between an open state and a closed state. The open state is a state in which the gas flowing in the pipe P2 is passed toward the hole Sb. The closed state is a state in which the supply of gas from the pipe P2 to the hole Sb is stopped.

The flow rate adjusting valve V4 adjusts the flow rate of the gas supplied to the hole Sb. When the valve V3 is opened, gas is supplied from the pipe P2 to the hole Sb at a flow rate corresponding to the opening degree of the flow rate adjusting valve V4. As a result, gas is discharged from the hole Sb. The opening degree indicates the degree to which the flow rate adjusting valve V4 is open.

The tank 22a contains a gas. The pump Pb sends the gas in the tank 22a to the pipe P2.

The fan filter unit 24 supplies gas to the inside of the chamber 3. Specifically, the fan filter unit 24 is arranged on the top plate portion 3a of the substrate processing device 1. Then, the fan filter unit 24 generates a downflow from above the shielding plate 19a toward the substrate holding portion 5. More specifically, the fan filter unit 24 has a fan and a filter. Then, the fan filter unit 24 takes in the outside air of the substrate processing device 1 by the fan and supplies the outside air to the inside of the chamber 3 through the filter. The outside air is clean air. The substrate processing device 1 is installed in a clean room.

Next, the control unit 101 will be described with reference to FIGS. 1 to 3. FIG. 3 is a block diagram of the substrate processing apparatus 1 according to the first embodiment of the present invention. As shown in FIG. 3, the substrate processing device 1 further includes a control unit 101. The control unit 101 controls various operations of the substrate processing device 1. The control unit 101 controls the indexer robot IR, the transfer robot CR, the processing liquid supply unit 9, the gas supply mechanism 22, the substrate rotation unit 7, the shielding unit operation mechanism 21, and the cup moving mechanism 15. Specifically, the control unit 101 includes an indexer robot IR, a transfer robot CR, a processing liquid supply unit 9, a gas supply mechanism 22, a substrate rotation unit 7, a shielding unit operation mechanism 21, and a cup moving mechanism 15. By transmitting a control signal, the indexer robot IR, the transfer robot CR, the processing liquid supply unit 9, the gas supply mechanism 22, the substrate rotating unit 7, the shielding unit operation mechanism 21, and the cup moving mechanism 15 are controlled. .. The control unit 101 includes a processor 101a such as a CPU (Central Processing Unit) and a storage device 101b. The storage device 101b stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure of the substrate W. The storage device 101b includes a main storage device such as a semiconductor memory and an auxiliary storage device such as a semiconductor memory and / or a hard disk drive. The storage device 101b may include removable media.

Specifically, the processor 101a controls the indexer robot IR, the indexer robot IR receives the processed substrate W from the delivery unit PS, and accommodates one of the plurality of substrate containers C. The substrate W can be accommodated in the vessel C (see FIG. 1).

The processor 101a controls the transfer robot CR, and the transfer robot CR receives the unprocessed substrate W from the delivery unit PS, and carries the substrate W into any of the plurality of substrate processing devices 1. Can be made to.

The processor 101a can control the valve V1 of the processing liquid supply unit 9 to switch the state of the valve V1 between the open state and the closed state. Specifically, the processor 101a controls the valve V1 of the processing liquid supply unit 9 to open the valve V1 so that the processing liquid flowing in the pipe P1 is passed toward the processing liquid nozzle 91. Can be done. Further, the processor 101a can control the valve V1 of the processing liquid supply unit 9 to close the valve V1 to stop the supply of the processing liquid flowing in the pipe P1 toward the processing liquid nozzle 91. it can.

The processor 101a can control the pump Pa to send the processing liquid in the tank 94 to the pipe P1.

The processor 101a can control the flow rate adjusting valve V2 of the processing liquid supply unit 9 to adjust the flow rate of the processing liquid supplied to the processing liquid nozzle 91. Specifically, the processor 101a can adjust the flow rate of the processing liquid supplied to the processing liquid nozzle 91 by adjusting the opening degree of the flow rate adjusting valve V2 of the processing liquid supply unit 9.

The processor 101a can control the valve V3 of the gas supply mechanism 22 to switch the state of the valve V3 between the open state and the closed state. Specifically, the processor 101a can control the valve V3 of the gas supply mechanism 22 to open the valve V3 so that the gas flowing in the pipe P2 can pass toward the processing liquid nozzle 91. .. Further, the processor 101a can stop the supply of gas flowing in the pipe P2 toward the processing liquid nozzle 91 by controlling the valve V3 of the gas supply mechanism 22 to close the valve V3.

The processor 101a can control the flow rate adjusting valve V4 of the gas supply mechanism 22 to adjust the flow rate of the gas supplied to the processing liquid nozzle 91. Specifically, the processor 101a can adjust the flow rate of the gas supplied to the processing liquid nozzle 91 by adjusting the opening degree of the flow rate adjusting valve V4 of the gas supply mechanism 22.

The processor 101a can control the pump Pb to send the gas in the tank 22a to the pipe P2.

The processor 101a can control the substrate rotating portion 7 to change the rotation speed of the substrate rotating portion 7. Specifically, the processor 101a can change the rotation speed of the substrate rotation unit 7 by changing the rotation speed of the motor 71 of the substrate rotation unit 7.

The processor 101a can control the shielding unit operating mechanism 21 to change the position of the shielding unit 19. Specifically, the processor 101a can change the position of the shielding unit 19 to the retracted position by controlling the shielding unit operating mechanism 21 and raising the shielding unit 19 in the vertical direction. On the other hand, the processor 101a can change the position of the shielding portion 19 to a close position by controlling the shielding portion operating mechanism 21 and lowering the shielding portion 19 in the vertical direction.

The processor 101a can control the cup moving mechanism 15 to change the position of the cup portion 11. Specifically, the processor 101a can change the position of the cup portion 11 to the liquid receiving position by controlling the cup moving mechanism 15 and raising the cup portion 11 in the vertical direction. On the other hand, the processor 101a can change the position of the cup portion 11 to the retracted position by controlling the cup moving mechanism 15 and lowering the cup portion 11 in the vertical direction.

Next, the substrate processing method according to the first embodiment will be described with reference to FIGS. 2 to 6. 4 and 5 are flowcharts showing the substrate processing method according to the first embodiment. FIG. 6 is a schematic view of the substrate W and the liquid film L. As shown in FIGS. 4 and 5, the substrate processing method includes steps S101 to S128. The processing of the substrate W is performed by executing the processing of steps S101 to S128 shown in FIGS. 4 and 5.

Step S101: The substrate W is carried into the substrate processing apparatus 1. Specifically, the substrate W is carried from the substrate container C into the substrate processing device 1 by the indexer robot IR and the transfer robot CR (FIG. 1). After the end of step S101, the process proceeds to step S102.

Step S102: The substrate processing device 1 holds the substrate W horizontally by the substrate holding portion 5. Specifically, the control unit 101 controls the substrate holding unit 5 so as to hold the substrate W horizontally. Step S102 corresponds to an example of the “board holding step”. After the end of step S102, the process proceeds to step S103.

Step S103: Start the rotation of the substrate W. Specifically, the control unit 101 controls the substrate rotation unit 7 so as to start the rotation of the substrate W. More specifically, the control unit 101 starts the rotation of the substrate W by rotating the motor 71 of the substrate rotation unit 7. The rotation speed of the substrate W is, for example, 800 rpm. After the end of step S103, the process proceeds to step S104.

Step S104: A DHF supply step is performed. The treatment liquid supply unit 9 discharges DHF (dilute hydrofluoric acid) to the substrate W toward the upper surface Wa of the substrate W. When DHF is supplied to the upper surface Wa of the substrate W, the natural oxide film formed on the upper surface Wa of the substrate W is removed. After the end of step S104, the process proceeds to step S106.

Step S106: A rinse liquid supply step is performed. The treatment liquid supply unit 9 supplies the rinse liquid to the substrate W toward the upper surface Wa of the substrate W. The rinse solution is, for example, carbonated water. The substrate W is cleaned by supplying the rinse liquid to the upper surface Wa of the substrate W. When the rinsing liquid is carbonated water, the rinsing liquid is supplied to remove static electricity from the substrate W. After the end of step S106, the process proceeds to step S108.

Step S108: The upper part of the substrate W is closed by the shielding portion 19, and the processing space Sa is formed. Specifically, the shielding plate 19a moves downward from the retracted position to the close position. As a result, the processing space Sa is formed as shown in FIG. The processing space Sa is a space for processing the substrate W. Step S108 corresponds to an example of the “space forming step”. The space forming step is performed before the liquid film forming step (step S112) described later. After the end of step S108, the process proceeds to step S110.

Step S110: The gas supply mechanism 22 supplies oxygen-free gas to the processing space Sa. Specifically, the gas supply mechanism 22 supplies the inert gas to the processing space Sa. The inert gas is, for example, nitrogen. By supplying a gas containing no oxygen to the processing space Sa, the oxygen concentration can be made lower than that outside the processing space. As a result, the processing space Sa can be made into a low oxygen space. Step S110 corresponds to an example of the “gas supply step”. After the end of step S110, the process proceeds to step S112 shown in FIG.

Step S112: A liquid film forming step is performed. The etching solution is supplied to the upper surface Wa of the substrate W to form a liquid film of the etching solution covering the upper surface Wa of the substrate W. Specifically, the control unit 101 controls the processing liquid supply unit 9 so as to supply the etching solution to the upper surface Wa of the substrate W to form a liquid film of the etching solution covering the upper surface Wa of the substrate W. Specifically, the control unit 101 adjusts the opening degree of the flow rate adjusting valve V2 of the processing liquid supply unit 9 and increases the flow rate of the etching liquid on the upper surface Wa of the substrate W to form a liquid film of the etching liquid. .. When the liquid film forming step is performed, as shown in FIG. 6A, the upper surface Wa of the substrate W is covered with the liquid film L of the etching solution. The thickness of the liquid film L is a thickness d1. Step S112 corresponds to an example of the “liquid film forming step”. After the end of step S112, the process proceeds to step S114.

Step S114: A paddle step is performed. Specifically, the rotation speed of the substrate W is defined as the first rotation speed R1. Specifically, the control unit 101 controls the substrate rotation unit 7 so that the rotation speed of the substrate W becomes the first rotation speed R1. Specifically, the control unit 101 controls the motor 71 of the substrate rotation unit 7 to set the rotation speed of the motor 71 of the substrate rotation unit 7 to the first rotation speed R1. The first rotation speed R1 is, for example, 10 rpm or more and 100 rpm or less. The first rotation speed R1 is preferably several tens of rpm. In the paddle process, the rotation speed of the substrate W is relatively small. Therefore, the state in which the liquid film of the etching solution covers the upper surface Wa of the substrate W can be maintained. By maintaining the state in which the liquid film covers the upper surface Wa of the substrate W, the etching of the substrate W can be promoted. Further, since the etching solution on the upper surface Wa of the substrate W is not shaken off, the consumption of the etching solution can be reduced. The rotation of the substrate W may be stopped in the paddle process. Specifically, the control unit 101 may control the substrate rotation unit 7 so as to stop the rotation of the substrate W. More specifically, the control unit 101 controls the motor 71 of the substrate rotating unit 7 to stop the motor 71, thereby stopping the rotation of the substrate W. Step S114 corresponds to an example of the "paddle process". After the end of step S114, the process proceeds to step S116.

Step S116: An etching solution discharge step is performed. Specifically, the rotation speed of the substrate W is defined as the second rotation speed R2. More specifically, the control unit 101 controls the substrate rotation unit 7 so that the rotation speed of the substrate W becomes the second rotation speed R2. More specifically, the control unit 101 controls the motor 71 of the substrate rotation unit 7 to set the rotation speed of the motor 71 of the substrate rotation unit 7 to the second rotation speed R2. The second rotation speed R2 is larger than the first rotation speed R1. The second rotation speed R2 is, for example, 200 rpm or more. By rotating the substrate W at a relatively high speed, a part of the etching treatment liquid covering the upper surface Wa of the substrate W is shaken off around the substrate W. As a result, as shown in FIG. 6B, the thickness of the etching solution on the upper surface Wa of the substrate W in the liquid film L is reduced. Specifically, the thickness of the liquid film L is reduced from the thickness d1 to the thickness d2. Step S116 corresponds to an example of the “etching liquid discharging step”. After the end of step S116, the process proceeds to step S118.

Step S118: Following the etching solution discharge step, the etching solution replenishment step is performed. Specifically, the rotation speed of the substrate W is set to the third rotation speed R3. More specifically, the control unit 101 controls the substrate rotation unit 7 so that the rotation speed of the substrate W becomes the third rotation speed R3. More specifically, the control unit 101 controls the motor 71 of the substrate rotation unit 7 to set the rotation speed of the motor 71 of the substrate rotation unit 7 to the third rotation speed R3. The third rotation speed R3 is smaller than the second rotation speed R2. The third rotation speed R3 is, for example, 10 rpm or more and 100 rpm or less. The third rotation speed R3 is preferably several tens of rpm. The rotation of the substrate W may be stopped in the etching solution replenishment step. Specifically, the control unit 101 may control the substrate rotation unit 7 so as to stop the rotation of the substrate W. More specifically, the control unit 101 controls the motor 71 of the substrate rotating unit 7 to stop the motor 71, thereby stopping the rotation of the substrate W. In the etching solution replenishment step, the etching solution is further supplied to the upper surface Wa of the substrate W to increase the thickness of the liquid film L. Specifically, the control unit 101 controls the processing liquid supply unit 9 so as to supply the etching solution to the upper surface Wa of the substrate W to increase the thickness of the liquid film L. More specifically, the control unit 101 adjusts the opening degree of the flow rate adjusting valve V2 of the processing liquid supply unit 9 to increase the flow rate of the etching solution on the upper surface Wa of the substrate W, thereby increasing the thickness of the liquid film L as well. Let me. As a result, as shown in FIG. 6C, the thickness of the liquid film L increases from the thickness d2 to the thickness d3. That is, the upper surface Wa of the substrate W is replenished with the etching solution. Step S118 corresponds to an example of the “etching liquid replenishment step”. After the end of step S118, the process proceeds to step S120.

Step S120: The control unit 101 determines whether or not the etching is completed. When the control unit 101 determines that the etching has not been completed (step S120: No), the process returns to step S116. Then, the etching solution discharging step of step S116 and the etching solution replenishing step of step S118 are performed again. On the other hand, when the control unit 101 determines that the etching is completed (step S120: Yes), the process proceeds to step S122. In this way, the etching solution discharging step of step S116 and the etching solution replenishing step of step S118 are repeated until the control unit 101 determines that the etching is completed.

The control unit 101 determines, for example, whether or not the etching process is completed based on whether or not the elapsed time from the start of the etching process (hereinafter referred to as the elapsed time) exceeds a predetermined time. Specifically, when the control unit 101 determines that the elapsed time exceeds a predetermined time, it determines that the etching is completed. On the other hand, when the control unit 101 determines that the elapsed time does not exceed a predetermined time, it determines that the etching has not been completed.

Further, for example, in the control unit 101, whether or not the number of times (hereinafter, referred to as the number of times of repetition) that the etching solution discharging step of step S116 and the etching solution replenishing step of step S118 are repeated exceeds a predetermined number of times. It is determined whether or not the etching process is completed based on. Specifically, when the control unit 101 determines that the number of repetitions exceeds a predetermined number of times, it determines that the etching is completed. On the other hand, when the control unit 101 determines that the number of repetitions does not exceed a predetermined number of times, it determines that the etching has not been completed.

Step S122: The processing liquid supply unit 9 supplies the rinse liquid to the substrate W toward the upper surface Wa of the substrate W. The rinse solution is, for example, carbonated water. By supplying the rinse liquid to the upper surface Wa of the substrate W, the etching liquid on the substrate W is washed away. After the end of step S122, the process proceeds to step S124.

Step S124: A drying step is performed. Specifically, the substrate W is dried by rotating the substrate W. After the end of step S124, the process proceeds to step S126.

Step S126: Stop the rotation of the substrate W. Specifically, the control unit 101 controls the substrate rotation unit 7 so as to stop the rotation of the substrate W. More specifically, the control unit 101 controls the motor 71 of the substrate rotating unit 7 to stop the motor 71, thereby stopping the rotation of the substrate W. After the end of step S126, the process proceeds to step S128.

Step S128: The substrate W is carried out from the substrate processing device 1. After the end of step S128, the process ends.

As shown in FIGS. 6A to 6C, the state in which the liquid film L is formed on the upper surface Wa of the substrate W is maintained in the paddle step, the etching solution discharging step, and the etching solution replenishing step. ing.

An example of the substrate processing method according to the first embodiment will be described with reference to FIG. 7. FIG. 7 is a diagram for explaining an example of the substrate processing method. In FIG. 7, the horizontal axis represents the time. On the vertical axis, DHF indicates the supply (ON) of the DHF and the stop (OFF) of the supply. The rinse liquid indicates the supply (ON) of the rinse liquid and the stop (OFF) of the supply. TMAH indicates supply (ON) of TMAH and stop (OFF) of supply. The rotation speed indicates the rotation speed of the substrate W. The closed position indicates the position of the shielding portion 19. Specifically, in the closed position, OFF indicates a retracted position and ON indicates a proximity position.

As shown in FIG. 7, the DHF supply step (step S104 in FIG. 4) is performed from time t1 to time t2. In the DHF supply process, the rotation speed of the substrate W is the rotation speed Ra. The rotation speed Ra is, for example, 800 rpm.

At time 2, the position of the shielding portion 19 moves downward from the retracted position to the close position.

At time t2 to time t3, the rinse liquid supply step (step S106 in FIG. 4) is performed. In the rinsing liquid supply step, the rotation speed of the substrate W becomes the rotation speed Ra. The rotation speed Ra is, for example, 800 rpm.

From time t3 to time t4, the liquid film forming step (step S112 in FIG. 5) is performed. In the liquid film forming step, the rotation speed of the substrate W becomes the rotation speed Ra. The rotation speed Ra is, for example, 800 rpm.

The paddle step (step S114 in FIG. 5) is performed at time t4 to time t6. In the paddle process, the rotation speed of the substrate W becomes the first rotation speed R1. The first rotation speed R1 is, for example, 10 rpm. At time t5, the supply of the etching solution is stopped.

At time t6 to time t7, the etching solution discharge step (step S116 in FIG. 5) is performed. In the etching solution discharging step, the rotation speed of the substrate W becomes the second rotation speed R2. The second rotation speed R2 is, for example, 300 rpm.

The etching solution replenishment step (step S118 in FIG. 5) is performed from time t7 to time t8. In the etching solution replenishment step, the rotation speed of the substrate W becomes the third rotation speed R3. The third rotation speed R3 is, for example, 10 rpm. In the etching solution replenishment step, when the replenishment of the required amount of the etching solution is completed, the supply of the etching solution to the upper surface Wa of the substrate W is stopped.

After that, the etching solution discharge step and the etching solution replenishment step are repeated until the etching process is completed. In other words, in the etching solution replenishment step, the etching solution is intermittently supplied to the upper surface Wa of the substrate W. Specifically, the etching solution discharge step is performed from time t8 to time t9. After that, the etching solution replenishment step is performed from time t9 to time t10. After that, the etching solution discharge step is performed at time t10 to time t11. After that, the etching solution replenishment step is performed at time t11 to time t12.

At time 12, the position of the shielding portion 19 moves upward from the proximity position to the retracted position.

When the etching process is completed, the rinse liquid supply step (step S122 in FIG. 5) is performed from time t12 to time t13. In the rinsing liquid supply step, the rotation speed of the substrate W becomes the rotation speed Ra. The rotation speed Ra is, for example, 800 rpm.

A drying step (step S124 in FIG. 5) is performed from time t13 to time t14. In the drying step, the rotation speed of the substrate W becomes the rotation speed Rb. The rotation speed Rb is, for example, 1500 rpm.

As described above, as described with reference to FIGS. 1 to 6, in the etching solution discharging step, the thickness of the liquid film is reduced at the second rotation speed R2 higher than the first rotation speed R1. Further, the thickness of the liquid film is increased at the third rotation speed R3, which is lower than the second rotation speed R2. Since the fresh etching solution is replenished after the deteriorated etching solution is discharged, the etching solution can be replaced efficiently, and the etching solution can be replaced with a fresh one while suppressing the consumption of the etching solution. it can.

Further, in the etching solution replenishment step, as illustrated in the present embodiment, when the required amount of the etching solution is supplied to the upper surface Wa of the substrate W, the supply of the etching solution may be stopped. As a result, the consumption of the etching solution can be reduced.

Further, in the substrate processing method, the etching solution discharge step and the etching solution replenishment step are repeated. Therefore, even if the etching solution deteriorates due to a decrease in the concentration of the etching solution, the deteriorated etching solution is efficiently replaced with a fresh etching solution. As a result, the etching efficiency can be improved while suppressing the consumption of the etching solution.

In addition, the space forming step is included before the liquid film forming step. In the space forming step, the upper part of the substrate W is closed by the lid portion (shielding portion 19) to form the processing space Sa for processing the substrate W. Therefore, the air flow on the substrate W can be suppressed. As a result, the state in which the liquid film is formed on the upper surface Wa of the substrate W can be maintained.

Further, in the gas supply step, a gas containing no oxygen is supplied to the processing space Sa to lower the oxygen concentration as compared with the outside of the processing space Sa. When the etching solution is TMAH, it is possible to suppress a decrease in the oxygen concentration of TMAH.

In the substrate processing method with reference to FIG. 7, the substrate W was rotated in the paddle step and the etching solution replenishment step, but the substrate W was stopped in the paddle step and the etching solution replenishment step. May be good.

Another example of the substrate processing method according to the first embodiment will be described with reference to FIG. FIG. 8 is a diagram for explaining another example of the substrate processing method. Since the substrate processing method shown in FIG. 8 is the same as the substrate processing method shown in FIG. 7, except that the rotation of the substrate W is stopped in the paddle step and the etching solution replenishment step, the overlapping portion will be described. Is omitted.

As shown in FIG. 8, the paddle step is performed at times t4 to t6. Specifically, in the paddle process, the rotation speed of the substrate W (first rotation speed R1) becomes 0, and the rotation of the substrate W stops.

The etching solution replenishment step is performed at time t7 to time t8, time t9 to time t10, and time t11 to time t12. Specifically, in the etching solution replenishment step, the rotation speed of the substrate W (third rotation speed R3) becomes 0, and the rotation of the substrate W stops.

In the substrate processing method with reference to FIGS. 7 and 8, the etching solution was intermittently supplied to the upper surface Wa of the substrate W in the etching solution replenishment step, but in the etching solution replenishment step, the upper surface of the substrate W was supplied. The etching solution may be continuously supplied to Wa. Further, in the etching solution discharging step, the supply of the etching solution to the upper surface Wa of the substrate W was stopped, but in the etching solution discharging step, the etching solution may be supplied to the upper surface Wa of the substrate W.

Another example of the substrate processing method according to the first embodiment will be described with reference to FIG. FIG. 9 is a diagram for explaining another example of the substrate processing method. The substrate treatment shown in FIG. 9 except that the etching solution is continuously supplied to the upper surface Wa of the substrate W in the etching solution replenishment step and the etching solution is supplied to the upper surface Wa of the substrate W in the etching solution discharge step. Since the method is the same as the substrate processing method shown in FIG. 7, the description of the overlapping portion will be omitted.

As shown in FIG. 9, the etching solution replenishment step is performed at time t6 to t7, time t8 to time t9, and time t10 to time t11. Here, in the etching solution replenishment step, the etching solution is continuously supplied to the upper surface Wa of the substrate W.

The etching solution discharge step is performed at time t5 to t6, time t7 to time t8, and time t9 to time t10. Here, in the etching solution discharging step, the etching solution is continuously supplied to the upper surface Wa of the substrate W.

[Embodiment 2]
The substrate processing apparatus 1A according to the second embodiment of the present invention will be described with reference to FIGS. 10 and 11. The second embodiment is mainly different from the first embodiment in that the substrate processing device 1A rotates the shielding portion 19B by the substrate rotating portion 7. Hereinafter, the points that the second embodiment differs from the first embodiment will be mainly described.

FIG. 10 is a schematic cross-sectional view showing the substrate processing apparatus 1A according to the second embodiment.

The treatment liquid supply mechanism 93 and the gas supply mechanism 22 have the same configurations as the treatment liquid supply mechanism 93 and the gas supply mechanism 22 according to the first embodiment.

The substrate holding portion 5A of the substrate processing device 1A further includes a plurality of engaging portions 41B in addition to the configuration of the substrate holding portion 5 shown in FIG. The plurality of engaging portions 41B are arranged in the circumferential direction CD on the outer peripheral portion of the upper surface of the spin base 51 at substantially equal angular intervals about the central axis AX. The plurality of engaging portions 41B are arranged outside the radial RD with respect to the plurality of chuck members 53. Each of the plurality of engaging portions 41B projects substantially vertically upward from the upper surface of the spin base 51.

Further, the shielding portion 19B further includes a plurality of engaging portions 41A and a flange portion 19d in addition to the configuration of the shielding portion 19 shown in FIG.

The plurality of engaging portions 41A are arranged in the circumferential direction CD on the outer peripheral portion of the lower surface of the shielding plate 19a at substantially equal angular intervals about the central axis AX. The plurality of engaging portions 41A face each of the plurality of engaging portions 41B in the axial direction AD. Each of the plurality of engaging portions 41A projects substantially vertically downward from the lower surface of the shielding plate 19a. Each of the plurality of engaging portions 41A has a recess (not shown) that is recessed upward.

Specifically, the plurality of engaging portions 41A of the shielding portion 19B engage with the substrate holding portion 5A. The shielding portion 19B rotates integrally with the substrate holding portion 5A by engaging the plurality of engaging portions 41A with the substrate holding portion 5A.

More specifically, the plurality of engaging portions 41B of the substrate holding portion 5A are fitted into the recesses of the plurality of engaging portions 41A of the shielding portion 19B, respectively. As a result, the shielding portion 19B rotates synchronously with the substrate holding portion 5 as the substrate holding portion 5 rotates.

The flange portion 19d extends radially outward from the upper end portion of the shaft portion 19b in an annular shape. The flange portion 19d has, for example, a substantially annular plate shape centered on the central axis AX.

The shielding unit operating mechanism 21X raises or lowers the shielding unit 19B along the axial direction AD. Specifically, the shielding unit operating mechanism 21X raises or lowers the shielding unit 19B between the proximity position and the retracted position. The proximity position and the evacuation position are the same as the proximity position and the evacuation position of the first embodiment, respectively. In FIG. 10, the shielding portion 19B is located at a close position. When the shielding portion 19B is located at a close position, the plurality of engaging portions 41A are respectively engaged with the plurality of engaging portions 41B. On the other hand, when the shielding portion 19B is located at the retracted position, the plurality of engaging portions 41A are separated from the plurality of engaging portions 41B, respectively. When the substrate W is treated with the processing liquid, the shielding portion operating mechanism 21X moves the shielding portion 19B to a close position.

Specifically, the shielding unit operating mechanism 21X has a holding unit 61 and an elevating mechanism 62. The elevating mechanism 62 raises or lowers the shielding portion 19B together with the holding portion 61. The elevating mechanism 62 includes, for example, an electric motor and a ball screw.

The holding portion 61 holds the shielding portion 19B. The holding portion 61 has a holding portion main body 611, a main body support portion 612, a flange support portion 613, and a support portion connecting portion 614. The holding portion main body 611 covers the upper part of the flange portion 19d of the shielding portion 19B. The main body support portion 612 is a rod-shaped arm extending substantially horizontally. One end of the main body support 612 is connected to the holding main body 611, and the other end is connected to the elevating mechanism 62. The support portion connecting portion 614 connects the flange support portion 613 and the holding portion main body 611 around the flange portion 19d. When the shielding portion 19B is located in the retracted position, the flange supporting portion 613 is in contact with the flange portion 19d of the shielding portion 19B from below to support it. On the other hand, as shown in FIG. 10, the flange support portion 613 is separated from the flange portion 19d of the shielding portion 19B when the shielding portion 19B is located at a close position. As a result, the shielding portion 19B becomes rotatable.

Next, the processing liquid supply unit 9 will be described with reference to FIG. FIG. 11 is a schematic side view showing the processing liquid supply unit 9. As shown in FIG. 11, in the second embodiment, the treatment liquid nozzle 91 of the treatment liquid supply unit 9 has a treatment liquid flow path 931 and two gas flow paths 371. The treatment liquid flow path 931 is connected to the treatment liquid supply mechanism 93. The two gas flow paths 371 are connected to the gas supply mechanism 22.

The treatment liquid supply mechanism 93 supplies the treatment liquid to the treatment liquid nozzle 91. Specifically, the treatment liquid supply mechanism 93 supplies the treatment liquid to the treatment liquid flow path 931. The treatment liquid supplied to the treatment liquid flow path 931 is discharged downward from the discharge port 931a provided on the lower end surface of the treatment liquid nozzle 91.

The gas supply mechanism 22 supplies gas to the processing liquid nozzle 91. Specifically, the gas supply mechanism 22 supplies gas to the two gas flow paths 371. The gas supply mechanism 22 supplies an inert gas such as nitrogen to the two gas flow paths 371, for example.

The gas supplied to the gas flow path 371 in the central portion of the treatment liquid nozzle 91 is injected downward from the lower surface injection port 371a provided on the lower end surface of the treatment liquid nozzle 91. On the other hand, the gas supplied to the gas flow path 371 on the outer peripheral portion of the treatment liquid nozzle 91 is injected to the surroundings from a plurality of side injection ports 371b provided on the side surface of the treatment liquid nozzle 91. Therefore, according to the second embodiment, the gas can be effectively supplied to the substrate W.

Also in this embodiment, the etching efficiency can be improved as in the first embodiment.

[Embodiment 3]
The substrate processing apparatus 1 according to the third embodiment of the present invention will be described with reference to FIG. The third embodiment is mainly different from the first embodiment in that the substrate processing device 1 does not include the shielding portion 19 and the shielding portion operating mechanism 21. Hereinafter, the points that the third embodiment is different from the first embodiment will be mainly described.

FIG. 12 is a schematic cross-sectional view showing the substrate processing apparatus 1 according to the third embodiment. As shown in FIG. 12, the substrate processing device 1 does not include the shielding portion 19 and the shielding portion operating mechanism 21.

The treatment liquid supply unit 9 includes a treatment liquid nozzle 91, a treatment liquid supply mechanism 93, and a nozzle moving unit 95.

The treatment liquid supply mechanism 93 has the same configuration as the treatment liquid supply mechanism 93 of the first embodiment.

The nozzle moving unit 95 rotates around the rotation axis AX2 to move the processing liquid nozzle 91 horizontally between the processing position and the standby position of the processing liquid nozzle 91. The rotation axis AX2 extends along the Z-axis direction. In other words, the rotation axis AX2 extends along the vertical direction. The processing position indicates a position above the substrate W. The standby position indicates a position outside the substrate holding portion 5 and the cup portion 11.

The substrate processing method according to the third embodiment will be described with reference to FIGS. 5 and 13. FIG. 13 is a flowchart showing a substrate processing method according to the third embodiment. The substrate processing method includes steps S101 to S106 shown in FIG. 13 and steps S112 to S128 shown in FIG. The substrate W is processed by executing the processes of steps S101 to S106 shown in FIG. 13 and steps S112 to S128 shown in FIG.

In this embodiment, the space forming step (step S108) and the gas supply step (step S110) are not performed. That is, after the rinse liquid supply step (step S106) shown in FIG. 13 is performed, the process proceeds to the liquid film forming step (step S112) shown in FIG.

Also in this embodiment, the etching efficiency can be improved as in the first and second embodiments.

The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 13). However, the present invention is not limited to the above-described embodiment, and can be implemented in various embodiments without departing from the gist thereof (for example, (1) to (4) shown below). The drawings are schematically shown mainly for each component for easy understanding, and the thickness, length, number, etc. of each component shown are different from the actual ones for the convenience of drawing creation. .. Further, the material, shape, dimensions, etc. of each component shown in the above embodiment are merely examples, and are not particularly limited, and various changes can be made without substantially deviating from the effects of the present invention. is there.

(1) In the first to third embodiments, the first rotation speed R1 in the paddle process and the third rotation speed R3 in the etching solution replenishment process are the same, but the present invention is not limited thereto. For example, the first rotation speed R1 and the third rotation speed R3 may be different. For example, the first rotation speed R1 may be larger than the third rotation speed R3. Alternatively, the first rotation speed R1 may be smaller than the third rotation speed R3.

(2) In the first to third embodiments, the rotation speed Ra of the substrate W in the liquid film forming step is different from that of the first rotation speed R1 in the paddle step, but the present invention is not limited thereto. For example, the rotation speed Ra and the first rotation speed R1 may be the same.

(3) In the first to third embodiments, the etching solution is supplied to the substrate W in the paddle step, but the present invention is not limited to this. For example, in the paddle process, it is not necessary to supply the etching solution to the substrate W.

(4) In the first to third embodiments, an example in which the treatment liquid is an etching liquid has been described, but the treatment liquid may be a rinsing liquid or a cleaning liquid. The rinsing solution is, for example, pure water or carbonated water. The cleaning solution is, for example, SC1 (ammonia hydrogen peroxide solution) solution, SC2 (hydrochloric acid hydrogen peroxide solution mixture) solution, or IPA (isopropyl alcohol).

1, 1A Substrate processing device 5, 5A Substrate holding unit 7 Substrate rotating unit 9 Processing liquid supply unit (etching liquid supply unit)
19, 19B Shielding part (lid part)
21, 21X Shielding part operation mechanism (moving part)
22 Gas supply mechanism (gas supply unit)
101 Control unit L Liquid film R1 1st rotation speed R2 2nd rotation speed R3 3rd rotation speed Sa Processing space W Substrate Wa Top surface

Claims (20)

The board holding process that holds the board horizontally,
A liquid film forming step of supplying an etching solution to the upper surface of the substrate to form a liquid film of the etching solution covering the upper surface of the substrate.
A paddle step in which the rotation speed of the substrate is set to the first rotation speed or the rotation of the substrate is stopped,
An etching solution discharge step of reducing the thickness of the liquid film by setting the rotation speed of the substrate to a second rotation speed higher than the first rotation speed, and
Following the etching solution discharge step, the rotation speed of the substrate is set to a third rotation speed smaller than the second rotation speed, or the rotation of the substrate is stopped, and the etching solution is supplied to the upper surface of the substrate. A substrate processing method including an etching solution replenishment step of increasing the thickness of the liquid film. The substrate processing method according to claim 1, wherein in the etching solution replenishment step, the etching solution is intermittently supplied to the upper surface of the substrate. The substrate processing method according to claim 1 or 2, wherein the etching solution discharging step and the etching solution replenishing step are repeatedly performed. Any of claims 1 to 3, further comprising a space forming step of closing the upper part of the substrate with a lid to form a processing space for processing the substrate prior to the liquid film forming step. The substrate processing method according to item 1. The substrate processing method according to claim 4, further comprising a gas supply step of supplying gas to the processing space. The substrate processing method according to claim 5, wherein in the gas supply step, a gas containing no oxygen is supplied to the processing space to lower the oxygen concentration as compared with the outside of the processing space. Any one of claims 1 to 6, wherein the state in which the liquid film is formed on the upper surface of the substrate is maintained in the paddle step, the etching solution discharge step, and the etching solution replenishment step. The substrate processing method described in the section. The first rotation speed is 100 rpm or less.
The second rotation speed is 200 rpm or more.
The substrate processing method according to any one of claims 1 to 7, wherein the third rotation speed is 100 rpm or less. The substrate processing method according to any one of claims 1 to 8, wherein the etching solution is a liquid that causes an exothermic reaction with the substrate. The substrate processing method according to claim 9, wherein the etching solution contains an aqueous solution of tetramethylammonium hydroxide or fluorinated nitric acid. A board holding part that holds the board horizontally,
A substrate rotating portion that integrally rotates the substrate and the substrate holding portion,
An etching solution supply unit that supplies an etching solution to the substrate,
A control unit for controlling the substrate rotating unit and the etching solution supply unit is provided.
The control unit
The substrate holding portion is controlled so as to hold the substrate horizontally.
The etching solution supply unit is controlled so as to supply the etching solution to the upper surface of the substrate to form a liquid film of the etching solution covering the upper surface of the substrate.
The substrate rotating portion is controlled so that the rotation speed of the substrate becomes the first rotation speed or the rotation of the substrate is stopped.
The thickness of the liquid film is reduced by controlling the rotating portion of the substrate so that the rotation speed of the substrate becomes the second rotation speed higher than the first rotation speed.
After reducing the thickness of the liquid film, the substrate rotating portion is controlled so that the rotation speed of the substrate becomes a third rotation speed smaller than the second rotation speed or the rotation of the substrate is stopped. A substrate processing apparatus that controls the etching solution supply unit so as to supply the etching solution to the upper surface of the substrate to increase the thickness of the liquid film. After reducing the thickness of the liquid film, the control unit controls the substrate rotation unit so that the rotation speed of the substrate becomes the third rotation speed or the rotation of the substrate is stopped. Further, when the etching solution supply unit is controlled so as to supply the etching solution to the upper surface of the substrate to increase the thickness of the liquid film, the etching solution is intermittently supplied to the upper surface of the substrate. The substrate processing apparatus according to claim 11, which controls the etching solution supply unit. The control unit
To reduce the thickness of the liquid film by controlling the rotating portion of the substrate so that the rotation speed of the substrate becomes the second rotation speed.
After reducing the thickness of the liquid film, the rotation speed of the substrate is continuously controlled to be the third rotation speed, or the rotation of the substrate is controlled so as to stop the rotation of the substrate, and the rotation speed of the substrate is stopped. The substrate processing apparatus according to claim 11 or 12, wherein the etching solution is repeatedly supplied to the upper surface of the substrate to control the etching solution supply unit so as to increase the thickness of the liquid film. A lid portion that closes the upper part of the substrate and forms a processing space for processing the substrate.
Further provided with a moving portion for moving the lid portion,
The substrate processing apparatus according to any one of claims 11 to 13, wherein the control unit controls the moving unit so that the processing space is formed. The substrate processing apparatus according to claim 14, further comprising a gas supply unit that supplies gas to the processing space. The substrate processing apparatus according to claim 15, wherein the gas supply unit supplies a gas containing no oxygen to the processing space. The control unit
When the substrate rotating portion is controlled so that the rotation speed of the substrate becomes the first rotation speed or the rotation of the substrate is stopped, the state in which the liquid film is formed on the upper surface of the substrate is maintained. The board rotating part is controlled so as to
The substrate rotating portion is controlled so that the rotation speed of the substrate becomes the second rotation speed, and when the thickness of the liquid film is reduced, the state in which the liquid film is formed on the upper surface of the substrate is maintained. To control the board rotating part,
After reducing the thickness of the liquid film, the substrate rotating portion is controlled so that the rotation speed of the substrate becomes the third rotation speed or the rotation of the substrate is stopped, and the rotation speed of the substrate is reduced. When the etching solution supply unit is controlled so as to supply the etching solution to the upper surface to increase the thickness of the liquid film, the substrate is rotated so as to maintain the state in which the liquid film is formed on the upper surface of the substrate. The substrate processing apparatus according to any one of claims 11 to 16, which controls a unit. The first rotation speed is 100 rpm or less.
The second rotation speed is 200 rpm or more.
The substrate processing apparatus according to any one of claims 11 to 17, wherein the third rotation speed is 100 rpm or less. The substrate processing apparatus according to any one of claims 11 to 18, wherein the etching solution is a liquid that causes an exothermic reaction with the substrate. The substrate processing apparatus according to claim 19, wherein the etching solution contains an aqueous solution of tetramethylammonium hydroxide or fluorinated nitric acid.

Images