TW202227198A - Rinsing device and rinsing method - Google Patents

Rinsing device and rinsing method Download PDF

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TW202227198A
TW202227198A TW110100155A TW110100155A TW202227198A TW 202227198 A TW202227198 A TW 202227198A TW 110100155 A TW110100155 A TW 110100155A TW 110100155 A TW110100155 A TW 110100155A TW 202227198 A TW202227198 A TW 202227198A
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air
wafer
control unit
gas
cleaning
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TW110100155A
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Chinese (zh)
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TWI770753B (en
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葉永全
徐嘉祥
王瑞僧
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南亞科技股份有限公司
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Priority to CN202110188736.6A priority patent/CN114724972A/en
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Publication of TW202227198A publication Critical patent/TW202227198A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A rinsing device includes a housing, a platform, a rinsing liquid nozzle, an air supply unit, an air drawing unit, and an air valve unit. The housing has accommodating space. The platform is disposed in the housing and is configured for rotating a wafer thereon. The rinsing liquid nozzle faces the wafer on the platform. The air supply unit is disposed in the housing and is configured for pumping air toward the platform. The air drawing unit is configured for extracting the air around the platform. The air valve unit is configured for controlling the air flow volume of the air.

Description

清洗裝置及清洗方法Cleaning device and cleaning method

本發明是一種清洗裝置及清洗方法，特別涉及一種清洗晶圓的清洗裝置及清洗方法。The invention relates to a cleaning device and a cleaning method, in particular to a cleaning device and a cleaning method for cleaning wafers.

光阻劑已廣泛地使用在現今的積體電路的製程中。光阻劑通常是由塗佈設備在矽晶圓旋轉時將光阻劑噴灑在矽晶圓表面並成形。Photoresists are widely used in the fabrication of today's integrated circuits. Photoresist is usually sprayed on the surface of the silicon wafer by coating equipment while the silicon wafer is spinning and shaped.

在旋轉塗佈過程中，通過位於矽晶圓周圍的保護罩來避免濺射的光阻劑污染周邊環境。然而，通過所述保護罩在防止污染的同時，也容易造成矽晶圓表面的圖形缺陷，尤其在晶邊清洗(Bevel Rinse)時更為嚴重。During the spin coating process, the sputtered photoresist is prevented from contaminating the surrounding environment by a protective cover located around the silicon wafer. However, while preventing contamination by the protective cover, pattern defects on the surface of the silicon wafer are also likely to be caused, especially during bevel rinse.

因此，如何提出一種可解決上述問題的清洗裝置，是目前業界亟欲投入研發資源解決的問題之一。Therefore, how to propose a cleaning device that can solve the above problems is one of the problems that the industry is eager to solve by investing R&D resources.

有鑑於此，本發明之一目的在於提出一種可有解決上述問題的清洗裝置。In view of this, one object of the present invention is to provide a cleaning device that can solve the above problems.

為了達到上述目的，依據本發明之一實施方式提供一種清洗裝置，其包括殼體、承載台、清洗液噴嘴、供氣單元、抽風單元以及氣閥單元。殼體具有容置空間。承載台設置於殼體內並用以轉動放置於承載台上的晶圓。清洗液噴嘴朝向承載台上的晶圓。供氣單元設置於殼體內並用以朝向承載台抽送氣體。抽風單元用以抽離承載台周遭的氣體。氣閥單元用以控制氣流量。In order to achieve the above objective, according to an embodiment of the present invention, a cleaning device is provided, which includes a casing, a carrying platform, a cleaning liquid nozzle, an air supply unit, an air extraction unit, and an air valve unit. The housing has an accommodating space. The carrier table is arranged in the casing and used to rotate the wafer placed on the carrier table. The cleaning fluid nozzle is directed towards the wafer on the stage. The gas supply unit is arranged in the casing and is used for pumping gas toward the bearing platform. The exhaust unit is used to extract the gas around the bearing platform. The air valve unit is used to control the air flow.

在本發明的一個或多個實施方式中，殼體包括上杯部及下杯部，其中上杯部及下杯部環繞承載台，抽氣單元使氣體沿著上杯部及下杯部之間被抽離。In one or more embodiments of the present invention, the housing includes an upper cup part and a lower cup part, wherein the upper cup part and the lower cup part surround the supporting platform, and the air extraction unit makes the gas along the upper cup part and the lower cup part. was pulled away.

在本發明的一個或多個實施方式中，上杯部及下杯部共同定義抽風通道，其中抽氣通道環繞承載台。In one or more embodiments of the present invention, the upper cup portion and the lower cup portion together define an air extraction channel, wherein the air extraction channel surrounds the carrying platform.

在本發明的一個或多個實施方式中，清洗裝置進一步包括控制單元，其中控制單元電性連接氣閥單元，控制單元用以驅動氣閥單元，使氣體的第一氣流量轉變為相異的第二氣流量。In one or more embodiments of the present invention, the cleaning device further includes a control unit, wherein the control unit is electrically connected to the air valve unit, and the control unit is used to drive the air valve unit to convert the first air flow of the gas into different second airflow.

在本發明的一個或多個實施方式中，清洗裝置進一步包括控制單元，控制單元電性連接承載台，控制單元用以控制承載台轉動，使承載台的第一轉速轉變為相異的第二轉速。In one or more embodiments of the present invention, the cleaning device further includes a control unit, the control unit is electrically connected to the bearing platform, and the control unit is used to control the rotation of the bearing platform, so that the first rotation speed of the bearing platform is converted into a second rotation speed that is different Rotating speed.

在本發明的一個或多個實施方式中，清洗裝置進一步包括控制單元，控制單元電性連接承載台及氣閥單元，控制單元用以同時控制氣閥單元及承載台，使氣體的第一氣流量轉變為相異的第二氣流量時，使承載台的第一轉速轉變為相異的第二轉速。In one or more embodiments of the present invention, the cleaning device further includes a control unit, the control unit is electrically connected to the bearing platform and the air valve unit, and the control unit is used to control the air valve unit and the bearing platform at the same time, so that the first gas of the gas is When the flow rate is changed to a different second air flow rate, the first rotational speed of the carrier is changed to a different second rotational speed.

在本發明的一個或多個實施方式中，其中第二氣流量大於第一氣流量，且第二轉速大於第一轉速。In one or more embodiments of the present invention, the second airflow rate is greater than the first airflow rate, and the second rotational speed is greater than the first rotational speed.

在本發明的一個或多個實施方式中，清洗裝置進一步包括控制單元，控制單元電性連接清洗液噴嘴，其中控制單元用以控制清洗噴嘴，使清洗液噴嘴的第一噴灑速度轉變為相異的第二噴灑速度。In one or more embodiments of the present invention, the cleaning device further includes a control unit, the control unit is electrically connected to the cleaning liquid nozzle, wherein the control unit is used to control the cleaning nozzle, so that the first spraying speed of the cleaning liquid nozzle is changed to different the second spraying speed.

本發明之另一目的在於提出一種可有解決上述問題的清洗方法。Another object of the present invention is to provide a cleaning method that can solve the above problems.

依據本發明之一實施方式提供一種清洗方法，其包括：提供位於承載台上的晶圓；以第一轉速轉動晶圓並在晶圓上塗佈光阻劑；以及在塗佈光阻劑後，以第二轉速轉動晶圓並朝向晶圓的晶邊噴灑清洗液體，其中第一轉速與第二轉速相異。According to an embodiment of the present invention, a cleaning method is provided, which includes: providing a wafer on a support table; rotating the wafer at a first rotational speed and coating photoresist on the wafer; and after coating the photoresist , rotating the wafer at a second rotational speed and spraying the cleaning liquid toward the crystal edge of the wafer, wherein the first rotational speed is different from the second rotational speed.

在本發明的一個或多個實施方式中，清洗方法更包括:在塗佈光阻劑的同時，朝向承載台抽送第一氣流量的氣體；以及在朝向晶圓的晶邊或晶背噴灑清洗液體的同時，朝向承載台抽送第二氣流量的氣體，其中第一氣流量與第二氣流量相異。In one or more embodiments of the present invention, the cleaning method further comprises: pumping a gas of a first flow rate toward the bearing table while applying the photoresist; and spraying cleaning toward the edge or back of the wafer At the same time of the liquid, the gas of the second gas flow is pumped toward the bearing platform, wherein the first gas flow is different from the second gas flow.

綜上所述，本發明提供一種清洗裝置，其可以搭配承載台的使用狀況調整承載台的轉速及承載台周圍氣體的氣流量，進而能有效地對承載台上的晶圓進行加工，藉由適當的調整氣閥單元能有效地避免晶圓在旋轉並清洗晶圓的過程中因液體和/溶液回濺至晶圓表面上的光阻劑而產生額外的缺陷。To sum up, the present invention provides a cleaning device, which can adjust the rotational speed of the carrier table and the air flow rate of the gas around the carrier table according to the usage conditions of the carrier table, so as to effectively process the wafer on the carrier table. Proper adjustment of the air valve unit can effectively avoid additional defects caused by liquid and/or solution splashing back onto the photoresist on the wafer surface during wafer rotation and wafer cleaning.

以上所述僅係用以闡述本發明所欲解決的問題、解決問題的技術手段、及其產生的功效等等，本發明之具體細節將在下文的實施方式及相關圖式中詳細介紹。The above descriptions are only used to describe the problems to be solved by the present invention, the technical means for solving the problems, and their effects, etc. The specific details of the present invention will be described in detail in the following embodiments and related drawings.

以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。除此之外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。Several embodiments of the present invention will be disclosed in the drawings below, and for the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the invention, these practical details are unnecessary. Besides, for the purpose of simplifying the drawings, some conventional structures and elements are shown in a simple and schematic manner in the drawings.

請參考第1圖，第1圖繪示為清洗裝置100的示意圖。在本發明的清洗裝置100包括殼體110、承載台120、清洗液噴嘴130、供氣單元140、150、氣閥單元160以及抽風單元180。殼體110具有容置空間。承載台120設置於殼體110內並用以轉動放置於承載台120上的晶圓W。清洗液噴嘴130朝向承載台120上晶圓W的晶邊或晶背。供氣單元140設置於殼體110內並用以朝向承載台120抽送氣體F。抽風單元180 (例如是抽氣扇)用以抽離承載台120周遭的氣體F。氣閥單元160用以控制氣體F的氣流量。藉此，本發明的清洗裝置100在轉動並清洗晶圓W的晶邊或晶背的同時，利用供氣單元140、氣閥單元160和/或抽風單元180控制殼體110內氣體F被抽離的氣流量，藉以在晶圓W塗佈光阻劑後能有效地避免清洗液回彈至晶圓W上表面的光阻劑，因此減少半導體製程中晶圓W上產生不必要的缺陷，進而提升製程良率，但本發明並不會以此為限。Please refer to FIG. 1 , which is a schematic diagram of the cleaning device 100 . The cleaning device 100 of the present invention includes a housing 110 , a supporting platform 120 , a cleaning liquid nozzle 130 , air supply units 140 and 150 , an air valve unit 160 and an air extraction unit 180 . The housing 110 has an accommodating space. The carrier 120 is disposed in the casing 110 and used to rotate the wafer W placed on the carrier 120 . The cleaning liquid nozzle 130 faces the edge or the back of the wafer W on the stage 120 . The air supply unit 140 is disposed in the casing 110 and is used for pumping the air F toward the carrying platform 120 . The exhaust unit 180 (eg, an exhaust fan) is used to extract the gas F around the support table 120 . The gas valve unit 160 is used to control the gas flow of the gas F. Thereby, the cleaning apparatus 100 of the present invention uses the air supply unit 140 , the air valve unit 160 and/or the air extraction unit 180 to control the air F in the housing 110 to be evacuated while rotating and cleaning the edge or back of the wafer W Therefore, after the photoresist is coated on the wafer W, the cleaning solution can be effectively prevented from rebounding to the photoresist on the upper surface of the wafer W, thereby reducing unnecessary defects on the wafer W in the semiconductor process. Thus, the process yield is improved, but the present invention is not limited to this.

在本發明的一個或多個實施方式，殼體110的容置空間與外界分隔，主要是由供氣單元140及抽風單元180協同作用以擾動殼體110內的空氣(例如是氣體F)流動情形。殼體110包括至少部分位於殼體110內的上杯部111及下杯部113，其中上杯部111及下杯部113環繞承載台120，抽氣單元180使氣體F沿著上杯部111及下杯部113之間被抽離。除此之外，上杯部114及下杯部113共同定義環繞承載台120的抽風通道150。也就是說，氣體F從承載台120周圍沿著抽氣通道150被抽離至抽氣單元180。此外，上杯部111具有中心通孔111a，中心通孔111a從上方對準承載台120並對準位於其上的晶圓W，以便於使用者在晶圓W上塗佈光阻劑。In one or more embodiments of the present invention, the accommodating space of the housing 110 is separated from the outside, mainly because the air supply unit 140 and the air extraction unit 180 cooperate to disturb the flow of the air (eg, gas F) in the housing 110 situation. The casing 110 includes an upper cup portion 111 and a lower cup portion 113 located at least partially inside the casing 110 , wherein the upper cup portion 111 and the lower cup portion 113 surround the support table 120 , and the air extraction unit 180 makes the gas F along the upper cup portion 111 and the lower cup portion 113 is pulled away. In addition, the upper cup portion 114 and the lower cup portion 113 together define an air exhaust channel 150 surrounding the carrying platform 120 . That is, the gas F is evacuated to the air extraction unit 180 along the air extraction channel 150 from around the carrier table 120 . In addition, the upper cup portion 111 has a central through hole 111a, which is aligned with the carrier table 120 from above and aligned with the wafer W thereon, so as to facilitate the user to apply photoresist on the wafer W.

在本發明的一個或多個實施方式中，承載台120包括有致動器(例如為電動馬達)，承載台120可受致動器驅動而繞著轉軸R1轉動，因此承載台120能進一步帶動承載台120上的晶圓W轉動，但本發明並不會以此為限。具體而言，供氣單元140包括用於產生氣體F的裝置或結構，例如供氣單元140是包括風扇，以便於對承載台120和晶圓W抽送氣體F。In one or more embodiments of the present invention, the carrier 120 includes an actuator (eg, an electric motor), and the carrier 120 can be driven by the actuator to rotate around the rotation axis R1, so the carrier 120 can further drive the carrier The wafer W on the stage 120 rotates, but the present invention is not limited to this. Specifically, the gas supply unit 140 includes a device or structure for generating the gas F, for example, the gas supply unit 140 includes a fan, so as to pump the gas F to the carrier 120 and the wafer W.

在本發明的一個或多個實施方式中，氣閥單元160可以設置於上杯部111及下杯部113之間，亦即氣閥單元160係設置於抽風通道150內，但本發明並不以此為限。實際上，使用者控制氣閥單元160的狀態(例如是啟閉狀態)，進而影響承載台120和晶圓W周圍氣體F的氣流量和影響通過上杯部111及下杯部113之間抽風通道150的氣體F的氣流量。In one or more embodiments of the present invention, the air valve unit 160 may be disposed between the upper cup portion 111 and the lower cup portion 113 , that is, the air valve unit 160 is disposed in the air exhaust passage 150 , but the present invention does not This is the limit. In fact, the user controls the state of the air valve unit 160 (for example, the opening and closing state), which in turn affects the air flow of the gas F around the stage 120 and the wafer W, and affects the ventilation between the upper cup portion 111 and the lower cup portion 113. The gas flow of the gas F in the channel 150 .

在本發明的一個或多個實施方式中，清洗裝置100更包括回收通道190，回收通道190連通抽氣通道150，氣體F帶離承載台120和晶圓W上的清洗液和/或溶液並回收至回收通道190。此外，回收通道190具有連接到液體回收槽的一條或多條管線，以便於回收並容納清洗液和/或溶液，本發明並不以此為限。In one or more embodiments of the present invention, the cleaning device 100 further includes a recovery channel 190 , the recovery channel 190 is communicated with the air extraction channel 150 , and the gas F is carried away from the cleaning liquid and/or solution on the carrier table 120 and the wafer W and It is recovered to the recovery channel 190 . In addition, the recovery channel 190 has one or more pipelines connected to the liquid recovery tank so as to recover and contain the cleaning liquid and/or solution, but the present invention is not limited thereto.

具體而言，抽風單元180係設置在回收通道190中，藉此抽風單元180能有效地經由抽風通道150及回收通道190將氣體F、清洗液和/或溶液從承載台120周圍抽離。除此之外，抽風單元180也可以設置於上杯部111及下杯部113之間，亦即抽風單元180係設置於抽風通道150內，以有效地將氣體F、清洗液和/或溶液從承載台120周圍抽離，但本發明並不以此為限。Specifically, the air extraction unit 180 is disposed in the recovery channel 190 , whereby the air extraction unit 180 can effectively extract the gas F, cleaning liquid and/or solution from the surrounding of the supporting platform 120 through the air extraction channel 150 and the recovery channel 190 . Besides, the air extraction unit 180 can also be arranged between the upper cup portion 111 and the lower cup portion 113 , that is, the air extraction unit 180 is arranged in the air extraction channel 150 to effectively remove the gas F, cleaning liquid and/or solution It is pulled away from the surroundings of the bearing platform 120, but the present invention is not limited to this.

在本發明的一個或多個實施方式，清洗液噴嘴130可連接泵體，清洗液噴嘴130及泵體之間連接有一條或多條管線，泵體容置清洗液，管線則可汲取並運輸泵體內的清洗液，其中泵體用以驅動所容置的清洗液並經由管線輸送清洗液至清洗液噴嘴130，以便於清洗液噴嘴130朝承載台120上的晶圓W(例如是晶圓W的晶邊和/或晶背)噴灑清洗液。具體而言，泵體可例如是電磁泵，而清洗液噴嘴130可以設置於承載台120的側邊或下方，以便於清洗液噴嘴130沿著噴灑路徑P朝向晶圓W的晶邊和/或晶背噴灑清洗液，但本發明並不會以此為限。In one or more embodiments of the present invention, the cleaning fluid nozzle 130 can be connected to the pump body, and one or more pipelines are connected between the cleaning fluid nozzle 130 and the pump body, the pump body accommodates the cleaning fluid, and the pipelines can be drawn and transported The cleaning liquid in the pump body, wherein the pump body is used to drive the housed cleaning liquid and deliver the cleaning liquid to the cleaning liquid nozzle 130 through the pipeline, so that the cleaning liquid nozzle 130 can face the wafer W (for example, the wafer W) on the carrier 120 W crystal edge and/or crystal back) spray cleaning solution. Specifically, the pump body can be, for example, an electromagnetic pump, and the cleaning liquid nozzles 130 can be disposed on the side or below of the support table 120 so that the cleaning liquid nozzles 130 can be directed toward the edge and/or the edge of the wafer W along the spraying path P. The crystal back is sprayed with a cleaning solution, but the present invention is not limited to this.

除此之外，清洗液噴嘴130噴灑的清洗液可例如包括去離子水、稀釋的氨水溶液(NH 4OH)、氫氯酸-過氧化氫混合溶液(SC1) 氫氯酸-過氧化氫混合溶液(SC2)、臭氧去離子水(DIWO 3)、硫酸與雙氧水混合溶液(SPM)、硫酸臭氧混合溶液(SOM)、磷酸(H 3PO 4)或稀釋的氫氟酸溶液(Diluted HF, DHF) ，但本發明並不會以此為限。 Besides, the cleaning solution sprayed by the cleaning solution nozzle 130 may include, for example, deionized water, a diluted ammonia solution (NH 4 OH), a mixed solution of hydrochloric acid-hydrogen peroxide (SC1), a mixed solution of hydrochloric acid-hydrogen peroxide solution (SC2), ozone deionized water (DIWO 3 ), sulfuric acid and hydrogen peroxide mixed solution (SPM), sulfuric acid ozone mixed solution (SOM), phosphoric acid (H 3 PO 4 ) or diluted hydrofluoric acid solution (Diluted HF, DHF) ), but the present invention is not limited to this.

請參考第1圖及第2圖，第2圖繪示為清洗裝置100的方塊圖。在本發明的一個或多個實施方式中，清洗裝置100進一步包括控制單元170，其中控制單元170電性連接氣閥單元160，控制單元170用以驅動氣閥單元160，在晶圓W上塗佈光阻劑後並接著使用清洗易噴嘴130朝向晶圓W的晶邊和/或晶背噴灑清洗液時，氣閥單元160將承載台120周圍氣體F的第一氣流量轉變為相異的第二氣流量。Please refer to FIG. 1 and FIG. 2 . FIG. 2 is a block diagram of the cleaning device 100 . In one or more embodiments of the present invention, the cleaning apparatus 100 further includes a control unit 170, wherein the control unit 170 is electrically connected to the air valve unit 160, and the control unit 170 is used to drive the air valve unit 160 to coat the wafer W on the wafer W. After the photoresist is distributed and then the cleaning liquid is sprayed toward the edge and/or the back of the wafer W using the easy cleaning nozzle 130, the air valve unit 160 converts the first air flow of the gas F around the stage 120 into a different flow. second airflow.

具體而言，氣閥單元160為一種電子氣閥，氣閥單元160的狀態可以改變殼體110內部氣體F的氣流量。在本發明的一個或多個實施方式，第一氣流量介於1.2 m 3/min至2 m 3/min之間(例如是2 m 3/min)，而第二氣流量介於2 m 3/min至2.6 m 3/min之間(例如是2.3 m 3/min)。在本發明的另外一些實施方式，第一氣流量介於2 m 3/min至2.6 m 3/min之間(例如是2.3 m 3/min)，而第二氣流量介於1.2 m 3/min至2 m 3/min之間(例如是2 m 3/min)，本發明並不會以此為限。在本發明的所有實施方式中，第一氣流量及第二氣流量並不為0 m 3/min。控制單元170可包含中央處理器(CPU；central processing unit)、控制器或其他具有運算功能的運算裝置，控制單元170可搭配軟體、韌體或其他硬體來協助控制氣閥單元160，進而控制氣體F的氣流量，本發明並不會以此為限。 Specifically, the air valve unit 160 is an electronic air valve, and the state of the air valve unit 160 can change the air flow of the gas F inside the housing 110 . In one or more embodiments of the present invention, the first gas flow is between 1.2 m 3 /min to 2 m 3 /min (eg, 2 m 3 /min), and the second gas flow is 2 m 3 /min to 2.6 m 3 /min (eg 2.3 m 3 /min). In other embodiments of the present invention, the first air flow is between 2 m 3 /min to 2.6 m 3 /min (eg, 2.3 m 3 /min), and the second air flow is 1.2 m 3 /min Between 2 m 3 /min (for example, 2 m 3 /min), the present invention is not limited to this. In all embodiments of the present invention, the first airflow rate and the second airflow rate are not 0 m 3 /min. The control unit 170 may include a central processing unit (CPU; central processing unit), a controller or other computing devices with computing functions. The control unit 170 may be combined with software, firmware or other hardware to assist in controlling the valve unit 160 , thereby controlling The flow rate of the gas F is not limited in the present invention.

在本發明的一個或多個實施方式，清洗裝置100的控制單元170電性連接承載台120(例如是承載台120的致動器)，其中控制單元170用以控制承載台120的轉動狀況，使承載台120的第一轉速轉變為相異的第二轉速。在本發明的一個或多個實施方式，第一轉速介於1500 rpm至2500 rpm之間(例如是2000 rpm)，而第二轉速介於2500 rpm至3500rpm之間(例如是3000 rpm)。除此之外，承載台120是以介於300 rpm/s至800 rpm/s的加速度從第一轉速轉變為第二轉速。更佳地，承載台120的加速度為500 rpm/s。在本發明的另外一些實施方式，第一轉速介於2500 rpm至3500 rpm之間(例如是3000 rpm)，而第二轉速介於1500 rpm至2500rpm之間(例如是2000 rpm)，本發明並不會以此為限。在本發明的所有實施方式中，第一轉速及第一轉速並不為0 rpm。In one or more embodiments of the present invention, the control unit 170 of the cleaning device 100 is electrically connected to the carrier 120 (eg, an actuator of the carrier 120 ), wherein the control unit 170 is used to control the rotation of the carrier 120 , The first rotational speed of the stage 120 is converted into a second different rotational speed. In one or more embodiments of the present invention, the first rotational speed is between 1500 rpm and 2500 rpm (eg, 2000 rpm), and the second rotational speed is between 2500 rpm and 3500 rpm (eg, 3000 rpm). Besides, the carrier 120 is converted from the first rotational speed to the second rotational speed at an acceleration ranging from 300 rpm/s to 800 rpm/s. More preferably, the acceleration of the stage 120 is 500 rpm/s. In other embodiments of the present invention, the first rotational speed is between 2500 rpm and 3500 rpm (eg, 3000 rpm), and the second rotational speed is between 1500 rpm and 2500 rpm (eg, 2000 rpm). Not limited to this. In all embodiments of the present invention, the first rotational speed and the first rotational speed are not 0 rpm.

在本發明的一個或多個實施方式中，控制單元170電性連接承載台120及氣閥單元160，控制單元170用以同時控制承載台120及氣閥單元160，使氣體F的第一氣流量轉變為相異的第二氣流量時，並使承載台120的第一轉速轉變為相異的第二轉速。具體而言，第二氣流量大於第一氣流量，且第二轉速大於第一轉速，本發明並不會以此為限。在另外一些實施方式中，第一氣流量大於第二氣流量，而第一轉速大於第二轉速。In one or more embodiments of the present invention, the control unit 170 is electrically connected to the carrier 120 and the air valve unit 160, and the control unit 170 is used to control the carrier 120 and the air valve unit 160 at the same time, so that the first gas of the gas F When the flow rate is changed to a different second air flow rate, the first rotational speed of the carrier 120 is changed to a different second rotational speed. Specifically, the second airflow rate is greater than the first airflow rate, and the second rotational speed is greater than the first rotational speed, which is not limited in the present invention. In other embodiments, the first airflow rate is greater than the second airflow rate, and the first rotational speed is greater than the second rotational speed.

在本發明的一個或多個實施方式中，清洗裝置100的控制單元170電性連接清洗液噴嘴130的電磁泵，進而控制清洗液噴嘴130噴灑清洗液的噴灑速度或控制清洗易噴嘴130的啟閉。舉例來說，控制單元170用以控制清洗液噴嘴130，使清洗液噴嘴130噴灑清洗液的第一噴灑速度轉變為相異的第二噴灑速度，其中第一噴灑速度大於第二噴灑速度，但本發明並不會以此為限。在本發明的另外一些實施方式中，也可以是第二噴灑速度大於第一噴灑速度。應注意的是，在本發明的所有實施方式中，清洗液噴嘴130的第一噴灑速度及第二噴灑速度皆不等於零。In one or more embodiments of the present invention, the control unit 170 of the cleaning device 100 is electrically connected to the electromagnetic pump of the cleaning liquid nozzle 130 , thereby controlling the spraying speed of the cleaning liquid nozzle 130 to spray the cleaning liquid or controlling the activation of the cleaning easy nozzle 130 close. For example, the control unit 170 is used to control the cleaning liquid nozzle 130 to change the first spraying speed of the cleaning liquid nozzle 130 to spray the cleaning liquid into a second spraying speed that is different, wherein the first spraying speed is greater than the second spraying speed, but The present invention is not limited to this. In other embodiments of the present invention, the second spraying speed may also be greater than the first spraying speed. It should be noted that, in all embodiments of the present invention, the first spraying speed and the second spraying speed of the cleaning liquid nozzle 130 are not equal to zero.

請參考第3圖，第3圖為清洗方法200的步驟圖。在本發明的一個或多個實施方式中，清洗方法200始於步驟210，其中步驟210為提供位於承載台上的晶圓。接著清洗方法200進行到步驟230，步驟230包括以第一轉速轉動晶圓並在晶圓上塗佈光阻劑。接著清洗方法200進行到步驟250，步驟250接續在步驟230之後，步驟250包括以第二轉速轉動晶圓並朝向晶圓的晶邊和/或晶背噴灑清洗液體，其中第一轉速與第二轉速相異。具體而言，清洗方法200可搭配本發明的清洗裝置100清洗晶圓，光阻劑則可以是利用旋轉塗佈(Spin on coating)形成於晶圓上，但本發明並不會以此為限。Please refer to FIG. 3 , which is a step diagram of the cleaning method 200 . In one or more embodiments of the invention, the cleaning method 200 begins at step 210, wherein step 210 is to provide a wafer on a stage. The cleaning method 200 then proceeds to step 230, which includes rotating the wafer at the first rotational speed and coating the wafer with photoresist. The cleaning method 200 then proceeds to step 250, which is continued after step 230. Step 250 includes rotating the wafer at a second rotational speed and spraying cleaning liquid toward the edge and/or the back of the wafer, wherein the first rotational speed is the same as the second rotational speed. The speed is different. Specifically, the cleaning method 200 can be used with the cleaning device 100 of the present invention to clean the wafer, and the photoresist can be formed on the wafer by spin on coating, but the present invention is not limited to this. .

在本發明的一個或多個實施方式中，清洗方法200的步驟230更包括:在塗佈光阻劑的同時，朝向承載台和承載台上方的晶圓抽送第一氣流量的氣體。除此之外，清洗方法200的步驟250更包括:在朝向晶圓的晶邊和/或晶背噴灑清洗液體的同時，朝向承載台和承載台上方的晶圓抽送第二氣流量的氣體，其中第一氣流量與第二氣流量相異。In one or more embodiments of the present invention, step 230 of the cleaning method 200 further comprises: pumping a first flow of gas toward the carrier and the wafer above the carrier while applying the photoresist. In addition, the step 250 of the cleaning method 200 further includes: while spraying the cleaning liquid toward the edge and/or the back of the wafer, pumping the gas of the second flow rate toward the carrier and the wafer above the carrier, The first air flow is different from the second air flow.

在本發明的一個或多個實施方式，第一轉速介於1500 rpm至2500 rpm之間(例如是2000 rpm)，而第二轉速介於2500 rpm至3500rpm之間(例如是3000 rpm)。在本發明的另一些實施方式，第一轉速介於2500 rpm至3500 rpm之間(例如是3000 rpm)，而第二轉速介於1500 rpm至2500rpm之間(例如是2000 rpm)，本發明並不會以此為限。In one or more embodiments of the present invention, the first rotational speed is between 1500 rpm and 2500 rpm (eg, 2000 rpm), and the second rotational speed is between 2500 rpm and 3500 rpm (eg, 3000 rpm). In other embodiments of the present invention, the first rotational speed is between 2500 rpm and 3500 rpm (for example, 3000 rpm), and the second rotational speed is between 1500 rpm and 2500 rpm (for example, 2000 rpm). Not limited to this.

在本發明的一個或多個實施方式，第一氣流量介於1.2 m 3/min至2 m 3/min之間(例如是2 m 3/min)，而第二氣流量介於2 m 3/min至2.6 m 3/min之間(例如是2.3 m 3/min)。在本發明的另外一些實施方式，第一氣流量介於2 m 3/min至2.6 m 3/min之間(例如是2.3 m 3/min)，而第二氣流量介於1.2 m 3/min至2 m 3/min之間(例如是2 m 3/min)，本發明並不會以此為限。 In one or more embodiments of the present invention, the first gas flow is between 1.2 m 3 /min to 2 m 3 /min (eg, 2 m 3 /min), and the second gas flow is 2 m 3 /min to 2.6 m 3 /min (eg 2.3 m 3 /min). In other embodiments of the present invention, the first air flow is between 2 m 3 /min to 2.6 m 3 /min (eg, 2.3 m 3 /min), and the second air flow is 1.2 m 3 /min Between 2 m 3 /min (for example, 2 m 3 /min), the present invention is not limited to this.

在本發明中可利用清洗裝置100實施清洗方法200，其中關於清洗裝置100的各個細節已介紹於先前段落，故在此不再重複贅述。In the present invention, the cleaning method 200 can be implemented by using the cleaning device 100 , wherein the details of the cleaning device 100 have been introduced in the previous paragraphs, so they will not be repeated here.

綜上所述，本發明提供一種清洗裝置，其可以搭配承載台的使用狀況調整承載台的轉速及承載台周圍氣體的氣流量，進而能有效地對承載台上的晶圓進行加工，藉由適當的調整氣閥單元能有效地避免晶圓在旋轉並清洗晶圓的過程中因液體和/溶液回濺至晶圓表面上的光阻劑而產生額外的缺陷。To sum up, the present invention provides a cleaning device, which can adjust the rotational speed of the carrier table and the air flow rate of the gas around the carrier table according to the usage conditions of the carrier table, so as to effectively process the wafer on the carrier table. Proper adjustment of the air valve unit can effectively avoid additional defects caused by liquid and/or solution splashing back onto the photoresist on the wafer surface during wafer rotation and wafer cleaning.

本發明不同實施方式已描述如上，應可理解的是不同實施方式僅作為實例來呈現，而不作為限定。在不脫離本發明的精神和範圍下，可根據本文的揭露對本揭露的實施方式做許多更動。因此，本發明的廣度和範圍不應受上述描述的實施例所限制。Various embodiments of the present invention have been described above, and it should be understood that the various embodiments have been presented by way of example only, and not limitation. Numerous changes may be made to the embodiments of the present disclosure in light of the disclosure herein without departing from the spirit and scope of the present invention. Accordingly, the breadth and scope of the present invention should not be limited by the above-described embodiments.

100:清洗裝置 110:殼體 111:上杯部 113:下杯部 120:承載台 130:清洗液噴嘴 140:供氣單元 150:抽風通道 160:氣閥單元 170:控制單元 180:抽風單元 190:回收通道 200:清洗方法 210, 230, 250:步驟 F:氣體 P:噴灑路徑 R1:轉軸 W:晶圓 100: Cleaning device 110: Shell 111: Upper Cup Department 113: Lower Cup 120: Bearing platform 130: Cleaning fluid nozzle 140: Air supply unit 150: exhaust channel 160: Air valve unit 170: Control Unit 180: Exhaust unit 190: Recovery Channel 200: Cleaning method 210, 230, 250: Steps F: gas P: spray path R1: Spindle W: Wafer

為達成上述的優點和特徵，將參考實施方式對上述簡要描述的原理進行更具體的闡釋，而具體實施方式被展現在附圖中。這些附圖僅例示性地描述本發明，因此不限制發明的範圍。通過附圖，將清楚解釋本發明的原理，且附加的特徵和細節將被完整描述，其中： 第1圖根據本發明一個或多個實施方式繪示清洗裝置的示意圖； 第2圖根據本發明一個或多個實施方式繪示清洗裝置的方塊圖；以及 第3圖根據本發明一個或多個實施方式繪示清洗方法的步驟圖。 To achieve the advantages and features described above, the principles briefly described above will be explained in more detail with reference to embodiments, which are illustrated in the accompanying drawings. These drawings illustrate the invention only by way of example and therefore do not limit the scope of the invention. The principles of the invention will be clearly explained, and additional features and details will be fully described, through the accompanying drawings, wherein: FIG. 1 shows a schematic diagram of a cleaning device according to one or more embodiments of the present invention; FIG. 2 shows a block diagram of a cleaning apparatus according to one or more embodiments of the present invention; and FIG. 3 shows a step diagram of a cleaning method according to one or more embodiments of the present invention.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date and number) none Foreign deposit information (please note in the order of deposit country, institution, date and number) none

200:清洗方法 200: Cleaning method

210,230,250:步驟 210, 230, 250: steps

Claims (10)

一種清洗裝置，包括： 殼體，具有容置空間； 承載台，設置於該殼體內並用以轉動放置於該承載台上的晶圓； 清洗液噴嘴，朝向該承載台上的該晶圓； 供氣單元，設置於該殼體內並用以朝向該承載台抽送氣體； 抽風單元，用以抽離該承載台周遭的該氣體；以及 氣閥單元，用以控制該氣體的氣流量。 A cleaning device, comprising: The shell has an accommodating space; a carrying table, disposed in the casing and used for rotating the wafer placed on the carrying table; a cleaning liquid nozzle, facing the wafer on the carrier; an air supply unit, disposed in the casing and used for pumping air toward the bearing platform; an air extraction unit for extracting the gas around the carrying platform; and The gas valve unit is used to control the gas flow of the gas. 如請求項1所述之所述之清洗裝置，其中該殼體包括上杯部及下杯部，其中該上杯部及該下杯部環繞該承載台，該抽氣單元使該氣體沿著該上杯部及該下杯部之間被抽離。The cleaning device as claimed in claim 1, wherein the casing comprises an upper cup portion and a lower cup portion, wherein the upper cup portion and the lower cup portion surround the supporting platform, and the air extraction unit makes the gas flow along the The upper cup portion and the lower cup portion are drawn apart. 如請求項2所述之清洗裝置，其中該上杯部及該下杯部共同定義抽風通道，其中該抽氣通道環繞該承載台。The cleaning device of claim 2, wherein the upper cup portion and the lower cup portion together define an air extraction channel, wherein the air extraction channel surrounds the supporting platform. 如請求項1所述之清洗裝置，進一步包括控制單元，其中該控制單元電性連接該氣閥單元，該控制單元用以驅動該氣閥單元，使得該氣體的第一氣流量轉變為相異的第二氣流量。The cleaning device according to claim 1, further comprising a control unit, wherein the control unit is electrically connected to the air valve unit, and the control unit is used to drive the air valve unit, so that the first air flow of the gas is changed to a different one of the second airflow. 如請求項1所述之清洗裝置，進一步包括控制單元，該控制單元電性連接該承載台，該控制單元用以控制該承載台轉動，使得該承載台的第一轉速轉變為相異的第二轉速。The cleaning device according to claim 1, further comprising a control unit, the control unit is electrically connected to the carrying platform, and the control unit is used to control the rotation of the carrying platform, so that the first rotation speed of the carrying platform is changed to a different first rotation speed Second speed. 如請求項1所述之清洗裝置，進一步包括控制單元，該控制單元電性連接該承載台及該氣閥單元，該控制單元用以同時控制該氣閥單元及該承載台，使該氣體的第一氣流量轉變為相異的第二氣流量時，使該承載台的第一轉速轉變為相異的第二轉速。The cleaning device according to claim 1, further comprising a control unit, the control unit is electrically connected to the carrying platform and the air valve unit, and the control unit is used to control the air valve unit and the carrying platform at the same time, so that the gas When the first air flow rate is converted into a different second air flow rate, the first rotation speed of the bearing platform is converted into a different second rotation speed. 如請求項6所述之清洗裝置，其中該第二氣流量大於該第一氣流量，且該第二轉速大於該第一轉速。The cleaning device of claim 6, wherein the second airflow rate is greater than the first airflow rate, and the second rotational speed is greater than the first rotational speed. 如請求項1所述之清洗裝置，進一步包括控制單元，該控制單元電性連接該清洗液噴嘴，其中該控制單元用以控制該清洗噴嘴，使該清洗液噴嘴的第一噴灑速度轉變為相異的第二噴灑速度。The cleaning device according to claim 1, further comprising a control unit, the control unit is electrically connected to the cleaning liquid nozzle, wherein the control unit is used to control the cleaning nozzle, so that the first spraying speed of the cleaning liquid nozzle is converted into a phase Different second spray speed. 一種清洗方法，包括： 提供位於承載台上的晶圓； 以第一轉速轉動該晶圓並在該晶圓上塗佈光阻劑；以及 在塗佈光阻劑後，以第二轉速轉動該晶圓並朝向該晶圓的晶邊或晶背噴灑清洗液體，其中該第一轉速與該第二轉速相異。 A cleaning method comprising: provide wafers on the stage; rotating the wafer at a first rotational speed and coating photoresist on the wafer; and After the photoresist is applied, the wafer is rotated at a second rotational speed and the cleaning liquid is sprayed toward the edge or the back of the wafer, wherein the first rotational speed is different from the second rotational speed. 如請求項9所述之清洗方法，更包括: 在塗佈光阻劑的同時，朝向該承載台抽送第一氣流量的氣體；以及 在朝向該晶圓的晶邊或晶背噴灑清洗液體的同時，朝向該承載台抽送第二氣流量的氣體，其中該第一氣流量與該第二氣流量相異。 The cleaning method as described in claim 9, further comprising: while applying the photoresist, pumping a first flow of gas toward the stage; and While spraying the cleaning liquid toward the edge or the back of the wafer, a second gas flow rate is pumped toward the carrying table, wherein the first gas flow rate is different from the second gas flow rate.
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