WO2020004547A1

WO2020004547A1 - Correction method, substrate-processing device, and substrate-processing system

Info

Publication number: WO2020004547A1
Application number: PCT/JP2019/025597
Authority: WO
Inventors: 井上　正史
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2018-06-27
Filing date: 2019-06-27
Publication date: 2020-01-02
Also published as: JP7439221B2; JP7184547B2; TWI742392B; JP2020004817A; TW202006594A; JP2023010956A

Abstract

The purpose of the present invention is to provide a correction method that can lighten the burden of a worker. The correction method of the present invention includes an acquisition step, a generation step, and a correction step. With the acquisition step, at least one execution condition of the execution conditions during etching execution, and at least one feature value indicating the etching execution results are acquired. With the generation step, based on the at least one execution condition and the at least one feature value, correction data is generated that corrects at least one setting condition among the setting conditions of a substrate-processing device. With the correction step, based on the correction data, the substrate-processing device corrects the at least one setting condition.

Description

Correction method, substrate processing apparatus, and substrate processing system

The present invention relates to a correction method, a substrate processing apparatus, and a substrate processing system.

基板 A substrate processing apparatus for etching a substrate is known. The state of the substrate processing apparatus fluctuates based on aging of components constituting the substrate processing apparatus, variations in the positions of components resulting from replacement of the components constituting the substrate processing apparatus, and the like. Therefore, it is necessary to appropriately correct various setting conditions of the substrate processing apparatus so that optimal etching is performed. Specifically, it is necessary to measure the film thickness of the substrate subjected to the etching process, and to correct the setting condition when the etching amount does not show an expected value. The film thickness of the substrate is measured using a film thickness measuring device (for example, see Patent Document 1).

JP 2013-1340065 A

However, the correction of the setting conditions is manually performed by the operator over a long time, which is a burden on the operator.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a correction method, a substrate processing apparatus, and a substrate processing system that can reduce a burden on an operator.

A correction method according to the present invention is a correction method for correcting a setting condition of a substrate processing apparatus for etching a substrate, wherein the correction method indicates at least one execution condition among the execution conditions at the time of performing the etching and an execution result of the etching. An acquisition step of acquiring at least one characteristic amount; and generating correction data for correcting at least one of the setting conditions based on the at least one execution condition and the at least one characteristic amount. A generating step; and a correcting step in which the substrate processing apparatus corrects the at least one setting condition based on the correction data.

In one embodiment, in the acquiring step, the at least one execution condition and the at least one feature amount are input to a learned model generated by machine learning.

In one embodiment, in the generation step, the correction data is output from the learned model.

In one embodiment, the correction method further includes a learning step of generating the learned model by machine learning the teacher information.

In one embodiment, the teacher information is information obtained when the at least one feature value indicates an optimum value, and includes the at least one feature value, the at least one execution condition, and the at least one And setting conditions.

In one embodiment, the at least one feature amount includes at least one of an etching amount and a uniformity of the etching amount.

In one embodiment, the substrate processing apparatus includes a processing chamber, a first nozzle, a supply channel, a liquid receiving unit, a second nozzle, a fan filter unit, and an exhaust fan. The processing chamber accommodates the substrate. The first nozzle discharges a processing liquid for etching the substrate toward the substrate. The supply channel supplies the processing liquid to the first nozzle. The liquid receiving unit receives the processing liquid scattered from the substrate. The second nozzle ejects a gas toward the substrate. The fan filter unit sends air into the processing chamber. The exhaust fan exhausts gas from the processing chamber.

In one embodiment, the execution conditions at the time of performing the etching include a temperature of the processing liquid at a tip of the first nozzle, a temperature of the gas at a tip of the second nozzle, and a temperature of the processing liquid from the first nozzle. A flow rate at which the gas is ejected from the second nozzle, a flow rate at which the processing liquid starts to be ejected from the first nozzle, a timing at which the gas starts to be ejected from the second nozzle, A timing at which the discharge of the processing liquid from the first nozzle is stopped, a timing at which the ejection of the gas from the second nozzle is stopped, a timing of changing a flow rate at which the processing liquid is discharged from the first nozzle, The timing of changing the flow rate at which the gas is ejected from the second nozzle, the rising characteristic of the flow rate at which the processing liquid is ejected from the first nozzle, and the second nozzle. A rising characteristic of a flow rate at which the gas is ejected from the first nozzle, a falling characteristic of a flow rate of the processing liquid ejected from the first nozzle, a falling characteristic of a flow rate at which the gas is ejected from the second nozzle, and the first characteristic. Information indicating whether or not the processing liquid is dripping from the tip of the nozzle, the concentration of the processing liquid flowing through the supply flow path, and the supply flow from the first nozzle after the discharge of the processing liquid is stopped. A speed at which the processing liquid is sucked toward an upstream side of a path, a position at which the sucked processing liquid stops, a film thickness distribution of the processing liquid covering the substrate, a position of the first nozzle, A moving speed of the first nozzle, an acceleration of the first nozzle, a change timing of the position of the first nozzle, a change timing of the moving speed of the first nozzle, and adhesion of the processing liquid to the liquid receiving unit. No Information indicating the amount of the treatment liquid attached to the liquid receiving portion, the rotation speed of the substrate, the acceleration of the substrate, the timing of changing the rotation speed of the substrate, the surface temperature of the substrate, The amount of eccentricity of the substrate, the amount of surface runout of the substrate, the position of the liquid receiving portion, the moving speed of the liquid receiving portion, the acceleration of the liquid receiving portion, and the timing of changing the position of the liquid receiving portion The timing of changing the moving speed of the liquid receiver, the wind speed of the air that the fan filter unit sends into the processing chamber, the air volume of the air that the fan filter unit sends into the processing chamber, and the air exhausted from the processing chamber. At least one of a wind speed of a gas discharged from the processing chamber and a flow rate of a gas exhausted from the processing chamber.

In one embodiment, the substrate processing apparatus includes a processing chamber, a first nozzle, a first supply channel, a circulation channel, a second supply channel, a heating unit, a liquid receiving unit, A nozzle, a third supply channel, a fan filter unit, an exhaust fan, an exhaust duct, and a valve are provided. The processing chamber accommodates the substrate. The first nozzle discharges a processing liquid for etching the substrate toward the substrate. The first supply channel supplies the processing liquid to the first nozzle. The circulation flow path is connected to the first supply flow path, and the processing liquid circulates. The second supply channel supplies the processing liquid to the circulation channel. The heating unit heats the substrate. The liquid receiving section receives the processing liquid scattered from the substrate. The second nozzle ejects a gas toward the substrate. The third supply channel supplies the gas to the second nozzle. The fan filter unit sends air into the processing chamber. The exhaust fan exhausts gas from the processing chamber. Gas exhausted from the processing chamber flows through the exhaust duct. The valve is installed in the exhaust duct.

In one embodiment, the setting conditions of the substrate processing apparatus include a temperature of the processing liquid in the circulation flow path, a temperature of the processing liquid in the first supply flow path, and a temperature of the gas in the third supply flow path. A temperature, a concentration of the processing liquid in the circulation flow path, a concentration of the processing liquid in the first supply flow path, a pressure in the second supply flow path, a pressure in the third supply flow path, A pressure of the circulation flow path, a flow rate of the processing liquid flowing through the circulation flow path, a flow rate of the processing liquid discharged from the first nozzle, a flow rate of the gas ejected from the second nozzle, A timing for generating a signal for starting discharge of the processing liquid from the nozzle, a timing for generating a signal for starting jetting of the gas from the second nozzle, and stopping the discharge of the processing liquid from the first nozzle Signal generator And a timing of generating a signal for stopping ejection of the gas from the second nozzle, a timing of generating a signal for changing a flow rate of the processing liquid discharged from the first nozzle, and a timing of generating the signal from the second nozzle. The timing of generating a signal for changing the flow rate of gas ejected, the rising characteristics of the flow rate of the processing liquid ejected from the first nozzle, the rising properties of the flow rate of the gas ejected from the second nozzle, and the first nozzle. And the falling characteristic of the flow rate at which the processing liquid is discharged from the second nozzle, the falling characteristic of the flow rate at which the gas is ejected from the second nozzle, and the first supply flow from the first nozzle after the discharge of the processing liquid is stopped. The speed at which the processing liquid is sucked toward the upstream side of the road, the position at which the sucked processing liquid stops, the rotational speed of the substrate, and the acceleration of the substrate A change timing of the rotation speed of the substrate, a position of the first nozzle, a moving speed of the first nozzle, an acceleration of the first nozzle, a change timing of a position of the first nozzle, Timing for changing the moving speed of the nozzle, the temperature for heating the substrate, the position of the liquid receiving portion, the moving speed of the liquid receiving portion, the acceleration of the liquid receiving portion, and the change of the position of the liquid receiving portion Timing, timing for changing the moving speed of the liquid receiving portion, differential pressure of the fan filter unit, differential pressure of the valve, wind speed of gas exhausted from the processing chamber, and exhausted gas from the processing chamber At least one of a gas flow rate and a light quantity in the processing chamber is included.

基板 The substrate processing apparatus of the present invention etches a substrate. The substrate processing apparatus includes a control unit. The control unit is configured to execute at least one of execution conditions of the substrate processing apparatus based on at least one of execution conditions during the execution of the etching and at least one feature amount indicating an execution result of the etching. Correction data for correcting one set condition is generated. The control unit corrects the at least one setting condition based on the correction data.

基板 The substrate processing system of the present embodiment includes a substrate processing apparatus and a correction data generation device. The substrate processing apparatus etches a substrate. The correction data generation device outputs correction data for correcting a setting condition of the substrate processing apparatus. The correction data generation device includes a control unit. The control unit is configured to execute at least one of execution conditions of the substrate processing apparatus based on at least one of execution conditions during the execution of the etching and at least one feature amount indicating an execution result of the etching. Correction data for correcting one set condition is generated. The substrate processing apparatus corrects the at least one setting condition based on the correction data.

According to the present invention, the burden on the worker can be reduced.

FIG. 1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention. 4 is a flowchart illustrating a substrate processing method according to the first embodiment of the present invention. It is a block diagram of a substrate processing device in Embodiment 1 of the present invention. FIG. 4 is a diagram illustrating an example of a change in the position of a processing liquid nozzle and a change in a moving speed during an etching process. It is a block diagram of a substrate processing device in Embodiment 1 of the present invention. FIG. 2 is a schematic diagram of a processing liquid supply unit according to the first embodiment of the present invention. It is a schematic diagram of a gas supply unit in Embodiment 1 of the present invention. FIG. 2 is a schematic diagram illustrating a processing liquid circulation unit, a first processing liquid component supply unit, a second processing liquid component supply unit, and a processing liquid recovery unit according to the first embodiment of the present invention. It is a block diagram of a substrate processing device in Embodiment 1 of the present invention. FIG. 1 is a schematic diagram of a substrate processing system according to a first embodiment of the present invention. It is a figure showing an example of the amount of etching for every radial position of a processed substrate. It is a block diagram of a substrate processing device in Embodiment 1 of the present invention. 5 is a flowchart illustrating a correction method according to the first embodiment of the present invention. FIG. 3 is a schematic diagram of a learned model according to the first embodiment of the present invention. 5 is a flowchart illustrating a learning method according to the first embodiment of the present invention. It is a schematic diagram of a substrate processing system in Embodiment 2 of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments. In addition, about the part which description overlaps, description may be abbreviate | omitted suitably. In the drawings, the same or corresponding portions are denoted by the same reference characters, and description thereof will not be repeated.

[Embodiment 1]
With reference to FIG. 1, a substrate processing apparatus 100 of the present embodiment will be described. FIG. 1 is a schematic diagram of a substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 supplies the processing liquid L to the substrate W and etches the substrate W with the processing liquid L. The substrate processing apparatus 100 of the present embodiment is a single-wafer type apparatus that etches substrates W one by one. In the present embodiment, the substrate W is a semiconductor wafer. The substrate W has a substantially disk shape.

As shown in FIG. 1, the substrate processing apparatus 100 includes a box-shaped partition 21, a fan filter unit (FFU) 22, and an exhaust unit 23. The partition 21 partitions the processing chamber 2 (chamber) that accommodates the substrate W.

The FFU 22 sends clean air from above the partition 21 to the processing chamber 2. Specifically, the FFU 22 includes an air supply fan and a filter. The FFU 22 sends the air filtered by the filter to the processing chamber 2.

(4) The exhaust part 23 is disposed below the processing chamber 2. The exhaust unit 23 exhausts the gas in the processing chamber 2. The FFU 22 and the exhaust unit 23 form a downflow (downflow) flowing from above to below in the processing chamber 2. The etching of the substrate W is performed in a state where a downflow is formed in the processing chamber 2.

The exhaust unit 23 includes an exhaust fan 231, an exhaust duct 232, and a valve 233. The exhaust fan 231 is arranged in the exhaust duct 232. The exhaust fan 231 exhausts gas from the processing chamber 2. Specifically, when the exhaust fan 231 is driven, the gas in the processing chamber 2 flows into the exhaust duct 232. As a result, gas exhausted from the processing chamber 2 flows through the exhaust duct 232.

(4) The exhaust duct 232 guides gas to exhaust equipment provided in a factory where the substrate processing apparatus 100 is installed. Therefore, when the exhaust fan 231 is driven, the gas in the processing chamber 2 is guided to the exhaust equipment via the exhaust duct 232.

The valve 233 is installed in the exhaust duct 232. Specifically, the valve 233 is disposed downstream of the exhaust fan 231 with respect to the direction in which gas flows through the exhaust duct 232. The valve 233 controls the pressure (exhaust pressure) of a gas flow path (exhaust flow path) formed by the exhaust duct 232. The valve 233 is, for example, an automatic valve.

基板 As shown in FIG. 1, the substrate processing apparatus 100 further includes a spin chuck 3. The spin chuck 3 holds the substrate W horizontally. Further, the spin chuck 3 rotates the substrate W about the rotation axis AX1 extending in the vertical direction while holding the substrate W. Specifically, the spin chuck 3 includes a spin base 31, a plurality of chuck pins 32, a rotating shaft 33, a spin motor 34, and a motor encoder 35.

スピン The spin base 31 of the present embodiment has a disk shape. The spin base 31 is held in a horizontal posture. Each of the plurality of chuck pins 32 holds the substrate W in a horizontal posture above the spin base 31. The rotation shaft 33 extends downward from the center of the spin base 31. The spin motor 34 rotates the substrate W and the spin base 31 about the rotation axis AX1 by rotating the rotation shaft 33 in the rotation direction Dr. The motor encoder 35 generates a signal indicating the rotation speed of the spin motor 34. In other words, the motor encoder 35 generates a signal indicating the rotation speed of the substrate W.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a processing liquid nozzle 41, a processing liquid supply pipe 42, a nozzle arm 43, and a nozzle moving unit 44.

The processing liquid nozzle 41 discharges the processing liquid L toward the substrate W held by the spin chuck 3. When the processing liquid L is supplied to the substrate W, the substrate W is etched. The treatment liquid L is, for example, an aqueous solution mainly containing phosphoric acid (etching component), an aqueous solution mainly containing hydrofluoric acid (etching component), an aqueous solution mainly containing nitric acid (etching component), and hydrofluoric acid (etching component). And nitric acid (etching component), an aqueous solution containing ammonium hydroxide (etching component) as a main component, and an aqueous solution mixing ammonium hydroxide (etching component) and hydrogen peroxide solution (etching component). Either.

The processing liquid supply pipe 42 supplies the processing liquid L to the processing liquid nozzle 41. The processing liquid supply pipe 42 forms a processing liquid supply flow path through which the processing liquid L flows toward the processing liquid nozzle 41.

The nozzle arm 43 supports the processing liquid nozzle 41. Specifically, the processing liquid nozzle 41 is attached to the tip of the nozzle arm 43. The nozzle moving unit 44 rotates the nozzle arm 43 about a rotation axis AX2 extending in the vertical direction around the spin chuck 3. As a result, the processing liquid nozzle 41 rotates around the rotation axis AX2. The processing liquid nozzle 41 discharges the processing liquid L toward the substrate W while rotating about the rotation axis AX2. In other words, the processing liquid nozzle 41 is a scan nozzle.

基板 As shown in FIG. 1, the substrate processing apparatus 100 further includes a heating unit 5. The heating unit 5 heats the substrate W. Specifically, the heating unit 5 includes an infrared heater 51, a heater arm 52, and a heater moving unit 53.

The infrared heater 51 irradiates the substrate W with infrared light. More specifically, the infrared heater 51 has an infrared lamp 51a. The infrared lamp 51a generates infrared light.

The heater arm 52 supports the infrared heater 51. Specifically, the infrared heater 51 is attached to the tip of the heater arm 52. The heater moving section 53 rotates the heater arm 52 about a rotation axis AX3 extending in a vertical direction around the spin chuck 3. As a result, the infrared heater 51 rotates around the rotation axis AX3. The infrared heater 51 heats the substrate W while rotating about the rotation axis AX3.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a rinsing liquid supply unit 6. The rinsing liquid supply unit 6 supplies a rinsing liquid to the substrate W. By supplying the rinsing liquid to the substrate W, the substrate W is rinsed. The rinsing liquid is, for example, pure water (deionized water: Deionized Water). The rinsing liquid is not limited to pure water, but may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, IPA (isopropyl alcohol), and hydrochloric acid water having a dilute concentration (for example, about 10 to 100 ppm). You may.

Specifically, the rinsing liquid supply unit 6 includes a rinsing liquid nozzle 61, a rinsing liquid supply pipe 62, and a rinsing liquid valve 63. The rinsing liquid nozzle 61 discharges a rinsing liquid toward the substrate W held by the spin chuck 3. The rinse liquid supply pipe 62 supplies a rinse liquid to the rinse liquid nozzle 61. The rinsing liquid nozzle 61 of the present embodiment is a fixed nozzle that discharges the rinsing liquid with the discharge port of the rinsing liquid nozzle 61 stopped. Note that the rinsing liquid nozzle 61 may be a scan nozzle.

(4) The rinsing liquid valve 63 switches between supplying and stopping supply of the rinsing liquid to the rinsing liquid nozzle 61. Specifically, when the rinse liquid valve 63 is opened, the rinse liquid is discharged from the rinse liquid nozzle 61 toward the substrate W. On the other hand, when the rinse liquid valve 63 is closed, the discharge of the rinse liquid is stopped. The rinse liquid valve 63 is, for example, a motor valve.

As shown in FIG. 1, the substrate processing apparatus 100 further includes a gas nozzle 71, a gas supply pipe 72, and a liquid receiving unit 8.

The gas nozzle 71 jets the gas G toward the substrate W. The gas G is an inert gas containing an inert component such as nitrogen. Specifically, the gas nozzle 71 ejects the gas G toward the substrate W when drying the substrate W.

The gas supply pipe 72 supplies the gas G to the gas nozzle 71. The gas supply pipe 72 forms a gas supply passage through which the gas G flows toward the gas nozzle 71.

The liquid receiving section 8 is disposed outside the substrate W held by the spin chuck 3. The liquid receiving portion 8 has a substantially cylindrical shape. The liquid receiver 8 is movable in the vertical direction. The liquid receiving unit 8 receives the processing liquid L scattered from the substrate W. Specifically, when the processing liquid L is supplied to the substrate W while the spin chuck 3 is rotating the substrate W, the processing liquid L supplied to the substrate W is shaken off around the substrate W. As a result, the processing liquid L scatters around the substrate W, and the processing liquid L scattered from the substrate W is received by the liquid receiving unit 8. The processing liquid L received by the liquid receiving unit 8 is sent to a processing liquid collecting unit 600 described with reference to FIG. The liquid receiving unit 8 also receives the rinsing liquid scattered from the substrate W in the same manner as the processing liquid L.

Here, a substrate processing method executed by the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. FIG. 2 is a flowchart illustrating the substrate processing method of the present embodiment. As shown in FIG. 2, the substrate processing method according to the present embodiment includes steps S1 to S5.

When the substrate processing apparatus 100 processes the substrate W, the substrate W is first loaded into the processing chamber 2 (Step S1). Specifically, the transfer robot loads the substrate W into the processing chamber 2. The loaded substrate W is held by the spin chuck 3. When the substrate W is carried into the processing chamber 2, the liquid receiving section 8 is located at the retracted position. When the liquid receiver 8 is located at the retracted position, the upper end 8a (FIG. 1) of the liquid receiver 8 is located below the spin base 31. When the spin chuck 3 holds the substrate W, the liquid receiving unit 8 moves upward to a liquid receiving position where the processing liquid L and the rinsing liquid scattered from the substrate W can be received. When the liquid receiving portion 8 is located at the liquid receiving position, the upper end 8 a of the liquid receiving portion 8 is located above the spin base 31.

(4) After the spin chuck 3 holds the substrate W, the substrate W is etched with the processing liquid L (Step S2). Specifically, the spin chuck 3 rotates the substrate W before supplying the processing liquid L to the substrate W. After the rotation speed of the substrate W reaches the specified rotation speed, the supply of the processing liquid L is started.

Specifically, the processing liquid nozzle 41 discharges the processing liquid L while rotating about the rotation axis AX2. The processing liquid nozzle 41 discharges the processing liquid L until at least the entire upper surface of the substrate W is covered with the processing liquid L. In this embodiment, after the discharge of the processing liquid L is stopped, the processing liquid L is sucked from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42 (suck back).

When the discharge of the processing liquid L from the processing liquid nozzle 41 is stopped, the heating unit 5 heats the substrate W and the processing liquid L. Specifically, the infrared heater 51 heats the substrate W and the processing liquid L while rotating about the rotation axis AX3.

After the substrate W and the processing liquid L are heated, a rinsing liquid is supplied to the substrate W (Step S3). By supplying the rinsing liquid to the substrate W, the processing liquid L on the surface of the substrate W is removed. Specifically, the processing liquid L is flushed out of the substrate W by the rinsing liquid, and is discharged around the substrate W. As a result, the liquid film of the processing liquid L on the substrate W is replaced with a liquid film of the rinsing liquid covering the entire upper surface of the substrate W.

(4) After replacing the processing liquid L on the surface of the substrate W with a rinsing liquid, the substrate W is dried (Step S4). Specifically, the rotation speed of the substrate W is set higher than the rotation speed during the etching process and the rinsing process. As a result, a large centrifugal force is applied to the rinsing liquid on the substrate W, and the rinsing liquid attached to the substrate W is shaken off around the substrate W. Thus, the rinse liquid is removed from the substrate W, and the substrate W is dried. When the substrate W is dried, the gas G is ejected from the gas nozzle 71 toward the substrate W. As a result, an inert gas flow toward the surface of the substrate W is formed, and drying of the substrate W is promoted. In addition, since the drying of the substrate W is promoted, the generation of the watermark can be suppressed. The spin chuck 3 stops the rotation of the substrate W, for example, after a predetermined time has elapsed since the high-speed rotation of the substrate W was started.

(4) After the rotation of the substrate W is stopped, the substrate W is unloaded from the processing chamber 2 (Step S5), and the processing shown in FIG. 2 ends. Specifically, after the rotation of the substrate W is stopped, the liquid receiving unit 8 moves from the liquid receiving position to the retracted position. Further, the holding of the substrate W by the spin chuck 3 is released. When the liquid receiving unit 8 moves to the retreat position and the holding of the substrate W by the spin chuck 3 is released, the transfer robot unloads the substrate W from the processing chamber 2. As a result, the processing of one substrate W by the substrate processing apparatus 100 ends.

Next, the substrate processing apparatus 100 according to the present embodiment will be described with reference to FIG. 1 again. As shown in FIG. 1, the substrate processing apparatus 100 further includes a thermographic camera 101, a video camera 102, and a dimming lamp 103.

The thermographic camera 101 detects a temperature distribution in the processing chamber 2. The temperature distribution in the processing chamber 2 includes the temperature of the processing liquid L at the tip of the processing liquid nozzle 41, the temperature of the gas G at the tip of the gas nozzle 71, the temperature of the surface of the substrate W, the temperature of the partition wall 21, and the temperature of the liquid receiving unit 8. , The temperature of the nozzle arm 43, the temperature of the spin base 31, and the like.

The video camera 102 captures an image of the inside of the processing room 2. Specifically, the video camera 102 images the processing liquid nozzle 41, the processing liquid supply pipe 42, the nozzle arm 43, the chuck pin 32, the liquid receiving unit 8, the substrate W, and the like. The dimming lamp 103 generates light for illuminating the processing chamber 2.

Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to FIGS. FIG. 3 is a block diagram of the substrate processing apparatus 100. As shown in FIG. 3, the substrate processing apparatus 100 further includes a liquid receiving and moving unit 81 and a control unit 10.

The control unit 10 includes a processor 11 and a storage unit 12. The processor 11 is, for example, a central processing unit (CPU). Alternatively, the processor 11 is a general-purpose computer. The storage unit 12 stores data and a computer program. Storage unit 12 includes a main storage device and an auxiliary storage device. The main storage device is constituted by, for example, a semiconductor memory. The auxiliary storage device includes, for example, a semiconductor memory and / or a hard disk drive. The storage unit 12 may include a removable medium.

The processor 11 executes the computer program stored in the storage unit 12, and executes the FFU 22, the exhaust unit 23, the spin chuck 3, the nozzle moving unit 44, the heating unit 5, the rinsing liquid supply unit 6, It controls the liquid receiver moving unit 81, the dimming lamp 103, the thermographic camera 101, and the video camera 102.

Specifically, the processor 11 controls the air supply fan provided in the FFU 22. The processor 11 can control the air supply fan and adjust the differential pressure of the FFU 22. The differential pressure of the FFU 22 is a setting condition of the substrate processing apparatus 100.

The processor 11 controls the exhaust fan 231 and the valve 233 provided in the exhaust unit 23. The processor 11 can control the exhaust fan 231 to adjust the wind speed of the gas flowing through the exhaust duct 232 (exhaust wind speed) and the flow rate of the gas flowing through the exhaust duct 232 (exhaust air flow rate). In addition, the processor 11 can control the valve 233 to adjust the exhaust pressure. The exhaust air speed, the exhaust air volume, and the exhaust pressure are set conditions of the substrate processing apparatus 100.

The processor 11 controls the chuck pin 32 and the spin motor 34 provided in the spin chuck 3. The processor 11 can control the spin motor 34 to adjust the rotational speed of the substrate W, the rotational acceleration of the substrate W, and the timing of changing the rotational speed of the substrate W. The rotation speed of the substrate W is a setting condition of the substrate processing apparatus 100.

The processor 11 receives a signal from the motor encoder 35 provided in the spin chuck 3. As described with reference to FIG. 1, the motor encoder 35 outputs a signal indicating the rotation speed of the substrate W. The processor 11 detects a rotation speed of the substrate W, a rotation acceleration of the substrate W, and a change timing of the rotation acceleration of the substrate W based on a signal received from the motor encoder 35. The detected rotation speed or the like of the substrate W is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the detected rotation speed of the substrate W and the like.

The nozzle moving unit 44 includes a motor 441 and a motor encoder 442. Hereinafter, the motor 441 is referred to as a “nozzle motor 441”. When the nozzle motor 441 is driven, the processing liquid nozzle 41 rotates around the rotation axis A2. The motor encoder 442 generates a signal indicating the rotation speed and the rotation position of the nozzle motor 441. In other words, the motor encoder 442 generates a signal indicating the moving speed and the radial position of the processing liquid nozzle 41.

The processor 11 controls the nozzle motor 441. The processor 11 controls the nozzle motor 441 to change the position of the processing liquid nozzle 41 in the radial direction, the moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the timing of changing the position of the processing liquid nozzle 41, and the processing liquid. The timing for changing the moving speed of the nozzle 41 can be adjusted. The position of the processing liquid nozzle 41 in the radial direction is a setting condition of the substrate processing apparatus 100.

The processor 11 receives a signal indicating the rotation speed and the rotation position of the nozzle motor 441 from the motor encoder 442. Based on the signal received from the motor encoder 442, the processor 11 changes the position of the processing liquid nozzle 41 in the radial direction, the moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the timing of changing the position of the processing liquid nozzle 41, And the change timing of the moving speed of the processing liquid nozzle 41 is detected. The detected position of the processing liquid nozzle 41 in the radial direction is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the detected position of the processing liquid nozzle 41 in the radial direction and the like.

The processor 11 controls the rinsing liquid valve 63 provided in the rinsing liquid supply unit 6. Further, the processor 11 controls the infrared lamp 51 a and the heater moving unit 53 included in the heating unit 5. The processor 11 can control the temperature at which the substrate W is heated (substrate heating temperature) by controlling the infrared lamp 51a. The substrate heating temperature is a setting condition of the substrate processing apparatus 100.

The liquid receiving moving section 81 moves the liquid receiving section 8 in the vertical direction. The liquid receiving and moving unit 81 includes a motor 811 and a motor encoder 812. Hereinafter, the motor 811 is referred to as a “liquid receiving motor 811”. When the liquid receiving motor 811 is driven, the liquid receiving section 8 moves in the vertical direction. Motor encoder 812 generates a signal indicating the rotation speed and rotation position of liquid receiving motor 811. In other words, the motor encoder 812 generates a signal indicating the moving speed and the vertical position of the liquid receiver 8.

The processor 11 controls the liquid receiving motor 811. The processor 11 controls the liquid receiving motor 811 to change the position of the liquid receiving unit 8 in the vertical direction, the moving speed of the liquid receiving unit 8, the acceleration of the liquid receiving unit 8, the timing of changing the position of the liquid receiving unit 8, and the liquid. The timing for changing the moving speed of the receiving portion 8 can be adjusted. The vertical position and the like of the liquid receiving section 8 are set conditions of the substrate processing apparatus 100.

The processor 11 receives a signal indicating the rotation speed and the rotation position of the liquid receiving motor 811 from the motor encoder 812. The processor 11, based on the signal received from the motor encoder 812, determines the position of the liquid receiver 8 in the vertical direction, the moving speed of the liquid receiver 8, the acceleration of the liquid receiver 8, the timing of changing the position of the liquid receiver 8, And a change timing of the moving speed of the liquid receiving unit 8 is detected. The detected position of the liquid receiving portion 8 in the vertical direction is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the detected vertical position and the like of the liquid receiving unit 8.

The processor 11 can control the dimming lamp 103 to adjust the amount of light in the processing chamber 2. The amount of light in the processing chamber 2 is a setting condition of the substrate processing apparatus 100.

The processor 11 receives an image signal indicating the temperature distribution in the processing room 2 from the thermography camera 101. Based on the image signal received from the thermographic camera 101, the processor 11 calculates the temperature of the processing liquid L at the tip of the processing liquid nozzle 41, the temperature of the gas G at the tip of the gas nozzle 71, the temperature of the surface of the substrate W, and the temperature of the partition 21. , The temperature of the liquid receiver 8, the temperature of the nozzle arm 43, the temperature of the spin base 31, and the like. The detected temperature is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the detected temperature.

The processor 11 receives an image pickup signal from the video camera 102. Hereinafter, information detected by the processor 11 based on the imaging signal will be described.

The processor 11 starts the timing at which the processing liquid L is started to be discharged from the processing liquid nozzle 41 based on the imaging signal (the timing at which the processing liquid L is started to be discharged) and the timing at which the processing liquid L is stopped being discharged from the processing liquid nozzle 41. (Timing for stopping the discharge of the processing liquid L), timing for changing the flow rate of the processing liquid L discharged from the processing liquid nozzle 41 (timing for changing the discharge flow rate of the processing liquid L), and flow rate for discharging the processing liquid L from the processing liquid nozzle 41 (The rising characteristic of the discharge flow rate of the processing liquid L), the falling characteristic of the flow rate of the processing liquid L discharged from the processing liquid nozzle 41 (the falling characteristic of the discharge flow rate of the processing liquid L), and the gas G from the gas nozzle 71. Timing of starting the jetting (timing of starting the jetting of gas G) and timing of stopping jetting of the gas G from the gas nozzle 71 (spouting of the gas G) Stop timing), the change timing of the flow rate at which the gas G is ejected from the gas nozzle 71 (timing of changing the ejection rate of the gas G), the rising characteristic of the flow rate at which the gas G is ejected from the gas nozzle 71 (the rising characteristic of the ejection rate of the gas G), and And the falling characteristic of the flow rate at which the gas G is ejected from the gas nozzle 71 (the falling characteristic of the gas G ejection flow rate). The detected discharge start timing of the processing liquid L is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the detected discharge start timing of the processing liquid L and the like.

The processor 11 moves the processing liquid L sucked from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42 (suck back speed) based on the imaging signal, and determines the stop position of the sucked processing liquid L. (Suck back stop position) is detected. The detected suckback speed and suckback stop position are execution conditions at the time of performing etching. The processor 11 causes the storage unit 12 to store information indicating the detected suckback speed and the suckback stop position.

The processor 11 detects whether or not the processing liquid L is dripping from the tip of the processing liquid nozzle 41 based on the image pickup signal (whether or not dripping has occurred). The presence or absence of the drop is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating presence / absence of dropping.

The processor 11 detects a film thickness distribution of the processing liquid L covering the entire surface of the substrate W based on the imaging signal. The film thickness distribution of the processing liquid L is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the film thickness distribution of the processing liquid L.

The processor 11 detects whether or not the processing liquid L has adhered to the upper surface and the outer surface of the liquid receiving unit 8 based on the imaging signal. The presence or absence of the treatment liquid L on the upper surface and the outer surface of the liquid receiving unit 8 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the presence or absence of the treatment liquid L on the upper surface and the outer surface of the liquid receiving unit 8.

The processor 11 detects the amount of the processing liquid L adhering to the upper surface and the outer surface of the liquid receiver 8 based on the imaging signal. The amount of the processing liquid L adhering to the upper surface and the outer surface of the liquid receiving unit 8 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the amount of the processing liquid L attached to the upper surface and the outer surface of the liquid receiving unit 8.

The processor 11 detects the position of the processing liquid nozzle 41, the shape of the nozzle arm 43, the shape of the heater arm 52, the position of the rinsing liquid nozzle 61, and the position of the gas nozzle 71 based on the imaging signal. Further, the processor 11 determines the specified position of the processing liquid nozzle 41 based on the position of the processing liquid nozzle 41 detected based on the imaging signal and the specified position of the processing liquid nozzle 41 stored in the storage unit 12. Is detected. In other words, a change in the position of the processing liquid nozzle 41 is detected. Similarly, the processor 11 detects the shape of the nozzle arm 43, the shape of the heater arm 52, the position of the rinsing liquid nozzle 61, the position of the gas nozzle 71 detected based on the imaging signal, and the nozzle arm stored in the storage unit 12. A change in the shape of the nozzle arm 43, a change in the shape of the heater arm 52, a change in the rinse liquid nozzle, based on the specified shape of the nozzle 43, the specified shape of the heater arm 52, the specified position of the rinsing liquid nozzle 61, and the specified position of the gas nozzle 71. A change in the position of the gas nozzle 61 and a change in the position of the gas nozzle 71 are detected. The change in the position of the processing liquid nozzle 41 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating a change in the position of the processing liquid nozzle 41 and the like.

The processor 11 detects the position of the liquid receiver 8 and the shape of the liquid receiver 8 based on the image signal. Further, the processor 11 determines the specified position of the liquid receiver 8 based on the position of the liquid receiver 8 detected based on the imaging signal and the specified position of the liquid receiver 8 stored in the storage unit 12. , That is, a change in the position of the liquid receiving portion 8 is detected. Similarly, the processor 11 changes the shape of the liquid receiving unit 8 based on the shape of the liquid receiving unit 8 detected based on the imaging signal and the specified shape of the liquid receiving unit 8 stored in the storage unit 12. Is detected. The change in the position of the liquid receiving portion 8 and the change in the shape of the liquid receiving portion 8 are execution conditions at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating a change in the position of the liquid receiving unit 8 and a change in the shape of the liquid receiving unit 8.

The processor 11 detects the shape of the chuck pin 32 based on the imaging signal. Further, the processor 11 changes the shape of the chuck pin 32 from the specified shape based on the shape of the chuck pin 32 detected based on the imaging signal and the specified shape of the chuck pin 32 stored in the storage unit 12. The amount, that is, a change in the shape of the chuck pin 32 is detected. The processor 11 further detects a degree of wear of the chuck pin 32 from a change in the shape of the chuck pin 32. The change in the shape of the chuck pin 32 and the degree of wear of the chuck pin 32 are execution conditions at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the change in the shape of the chuck pin 32 and the degree of wear of the chuck pin 32.

The processor 11 detects the distribution of the gas flow (air flow distribution) flowing in the processing chamber 2 based on the imaging signal. The airflow distribution is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the airflow distribution.

The processor 11 detects the amount of eccentricity of the substrate W and the amount of runout of the substrate W based on the imaging signal. The amount of eccentricity of the substrate W and the amount of runout of the substrate W are execution conditions when performing etching. The processor 11 causes the storage unit 12 to store information indicating the amount of eccentricity of the substrate W and the amount of runout of the substrate W.

The substrate processing apparatus 100 has been described above with reference to FIGS. 1 and 3. Next, the movement of the processing liquid nozzle 41 during the etching process will be described with reference to FIG. FIG. 4 is a diagram illustrating an example of a change in the position of the processing liquid nozzle 41 and a change in the moving speed during the etching process. 4, the vertical axis indicates the moving speed of the processing liquid nozzle 41, and the horizontal axis indicates the radial position of the substrate W.

(4) As shown in FIG. 4, during the etching process, the processing liquid nozzle 41 moves from the center of the substrate W to a radial position c. Specifically, the processing liquid nozzle 41 moves while accelerating from the center of the substrate W to the radial position a. The moving speed of the processing liquid nozzle 41 when reaching the radial position a is “Va”. Thereafter, the processing liquid nozzle 41 moves while decelerating from the radial position a to the radial position b. The moving speed of the processing liquid nozzle 41 when reaching the radial position b is “Vb”. When reaching the radial position b, the processing liquid nozzle 41 moves while further decelerating from the radial position b to the radial position c, and stops at the radial position c. Thus, the processing liquid nozzle 41 accelerates and decelerates during the etching process.

Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to FIGS. FIG. 5 is a block diagram of the substrate processing apparatus 100. As shown in FIG. 5, the substrate processing apparatus 100 further includes a surface temperature sensor 104 and a surface potential sensor 105.

(4) The surface temperature sensor 104 detects the temperature at which the infrared heater 51 heats the substrate W. Specifically, the surface temperature sensor 104 detects the surface temperature of the infrared heater 51. The processor 11 receives from the surface temperature sensor 104 a signal indicating the temperature at which the infrared heater 51 heats the substrate W (substrate heating temperature). The substrate heating temperature is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the substrate heating temperature.

(4) The surface potential sensor 105 detects the surface potential of the substrate W. The processor 11 receives a signal indicating the potential of the surface of the substrate W (substrate surface potential) from the surface potential sensor 105. The substrate surface potential is an execution condition when performing the etching. The processor 11 causes the storage unit 12 to store information indicating the substrate surface potential.

As shown in FIG. 5, the substrate processing apparatus 100 further includes a first differential pressure gauge 106, a supply air velocity meter 107, and a supply air flow meter 108.

The first differential pressure gauge 106 detects the differential pressure of the FFU 22. The first differential pressure gauge 106 is, for example, a fine differential pressure gauge. The processor 11 receives a signal indicating the differential pressure of the FFU 22 from the first differential pressure gauge 106. The differential pressure of the FFU 21 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the pressure difference of the FFU 22.

The air supply anemometer 107 detects the air velocity (air supply air velocity) of the air that the FFU 22 sends into the processing chamber 2. The processor 11 receives a signal indicating the supply air velocity from the supply air velocity meter 107. The supply air velocity is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the supply air velocity.

(4) The air supply air flow meter 108 detects the air flow (air supply air flow) of the air that the FFU 22 sends into the processing chamber 2. The processor 11 receives a signal indicating the supply air flow from the supply air flow meter 108. The supply air volume is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the supply air volume.

基板 As shown in FIG. 5, the substrate processing apparatus 100 further includes a second differential pressure gauge 109, an exhaust anemometer 110, and an exhaust air flow meter 111.

The second differential pressure gauge 109 detects the differential pressure of the valve 233. The second differential pressure gauge 109 is, for example, a fine differential pressure gauge. The processor 11 receives, from the second differential pressure gauge 109, a signal indicating the differential pressure of the valve 233. The differential pressure of the valve 233 corresponds to the exhaust pressure. The exhaust pressure is an execution condition when performing the etching. The processor 11 causes the storage unit 12 to store information indicating the differential pressure (exhaust pressure) of the valve 233.

(4) The exhaust gas anemometer 110 detects the wind velocity (exhaust wind velocity) of the gas exhausted from the processing chamber 2. The processor 11 receives a signal indicating the exhaust wind speed from the exhaust anemometer 110. The exhaust air velocity is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the exhaust wind speed.

(4) The exhaust air flow meter 111 detects the air volume of the gas exhausted from the processing chamber 2 (the exhaust air volume). The processor 11 receives a signal indicating the exhaust air volume from the exhaust air volume meter 111. The exhaust air volume is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the exhaust air volume.

As shown in FIG. 5, the substrate processing apparatus 100 further includes a light quantity sensor 112, an atmosphere concentration sensor 113, a humidity sensor 114, an oxygen concentration sensor 115, an ammonia concentration sensor 116, and a VOC concentration sensor 117.

The light quantity sensor 112 detects the light quantity in the processing chamber 2. The processor 11 receives a signal indicating the amount of light in the processing chamber 2 from the light amount sensor 112. The light amount in the processing chamber 2 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the amount of light in the processing chamber 2.

(4) The atmosphere concentration sensor 113 detects the concentration of the processing liquid L gasified in the processing chamber 2 (processing liquid atmospheric concentration). The processor 11 receives a signal indicating the processing solution atmosphere concentration from the atmosphere concentration sensor 113. The processing solution atmosphere concentration is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the processing solution atmosphere concentration.

(4) The humidity sensor 114 detects the humidity in the processing chamber 2. The processor 11 receives a signal indicating the humidity in the processing chamber 2 from the humidity sensor 114. The humidity in the processing chamber 2 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the humidity in the processing room 2.

The oxygen concentration sensor 115 detects the oxygen concentration in the processing chamber 2. The processor 11 receives a signal indicating the oxygen concentration in the processing chamber 2 from the oxygen concentration sensor 115. The oxygen concentration in the processing chamber 2 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the oxygen concentration in the processing chamber 2.

(4) The ammonia concentration sensor 116 detects the ammonia concentration in the processing chamber 2. The processor 11 receives a signal indicating the ammonia concentration in the processing chamber 2 from the ammonia concentration sensor 116. The ammonia concentration in the processing chamber 2 is an execution condition at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the ammonia concentration in the processing chamber 2.

The VOC concentration sensor 117 detects the concentration of volatile organic compounds (VOC) in the processing chamber 2 (VOC concentration). The processor 11 receives a signal indicating the VOC concentration in the processing chamber 2 from the VOC concentration sensor 117. The VOC concentration in the processing chamber 2 is an execution condition when performing the etching. The processor 11 causes the storage unit 12 to store information indicating the VOC concentration in the processing chamber 2.

Next, the processing liquid supply unit 40 of the present embodiment will be described with reference to FIG. FIG. 6 is a schematic diagram of the processing liquid supply unit 40 of the present embodiment. As shown in FIG. 6, the substrate processing apparatus 100 includes a processing liquid supply unit 40. The processing liquid supply unit 40 supplies the processing liquid L to the processing liquid nozzle 41. The processing liquid supply unit 40 includes a temperature sensor 421, a concentration sensor 422, a valve 423, a mixing valve 424, a flow meter 425, and a heater in addition to the processing liquid supply pipe 42 described with reference to FIG. 426 and a suck back valve 427 are further provided.

(4) The temperature sensor 421 detects the temperature of the processing liquid L flowing through the processing liquid supply pipe 42. The concentration sensor 422 detects the concentration of the etching component contained in the processing liquid L flowing through the processing liquid supply pipe 42. Hereinafter, the concentration of the etching component contained in the processing liquid L flowing through the processing liquid supply pipe 42 may be referred to as “first processing liquid concentration”.

The valve 423 is disposed in the processing liquid supply pipe 42. The valve 423 switches between supplying and stopping the supply of the processing liquid L to the processing liquid nozzle 41. The valve 423 controls the flow rate of the processing liquid L flowing downstream of the valve 423 in the processing liquid supply pipe 42. Further, the valve 423 controls the discharge flow rate of the processing liquid L discharged from the processing liquid nozzle 41. Further, the valve 423 controls a rising characteristic and a falling characteristic of the discharge flow rate of the processing liquid L. Specifically, when the valve 423 is opened, the processing liquid L is discharged from the processing liquid nozzle 41 toward the substrate W. On the other hand, when the valve 423 is closed, the discharge of the processing liquid L stops. The flow rate of the processing liquid L flowing downstream of the valve 423 is adjusted according to the opening degree of the valve 423. Therefore, the discharge flow rate of the processing liquid L is adjusted according to the opening degree of the valve 423. Further, the rising characteristic of the discharge flow rate of the processing liquid L is adjusted according to the speed at which the valve 423 is opened, and the falling characteristic of the discharge flow rate of the processing liquid L is adjusted according to the speed at which the valve 423 is closed. The valve 423 is, for example, a motor valve.

The mixing valve 424 is disposed in the processing liquid supply pipe 42. When the mixing valve 424 is opened, pure water flows into the processing liquid supply pipe 42 to dilute the first processing liquid concentration.

The flow meter 425 detects the flow rate of the processing liquid L flowing through the processing liquid supply pipe 42. In other words, the discharge flow rate of the processing liquid L is detected. The heater 426 heats the processing liquid L flowing through the processing liquid supply pipe 42.

The suck back valve 427 is disposed in the processing liquid supply pipe 42. The suck back valve 427 is provided downstream of the valve 423 to change the volume of the processing liquid supply flow path. More specifically, the suck back valve 427 has a diaphragm, and changes the volume of the processing liquid supply flow path by deforming the diaphragm by flowing pressurized air. When the volume of the processing liquid supply channel increases due to the inflow of the pressurized air, the pressure of the processing liquid nozzle 41 and the pressure of the processing liquid supply channel instantaneously decrease, and the vicinity of the opening of the processing liquid nozzle 41 A suction force acts on the processing liquid L remaining in the substrate. In the present embodiment, after the discharge of the processing liquid L is stopped, the control unit 10 (processor 11) described with reference to FIGS. 3 and 5 controls the suck-back valve 427 to add the suck-back valve 427. Inlet compressed air. As a result, the processing liquid L is sucked from the processing liquid nozzle 41 toward the upstream side of the processing liquid supply pipe 42.

Next, the gas supply unit 70 will be described with reference to FIG. FIG. 7 is a schematic diagram of the gas supply unit 70. As shown in FIG. 7, the substrate processing apparatus 100 includes a gas supply unit 70. The gas supply unit 70 includes a regulator 721, a temperature sensor 722, a pressure sensor 723, a concentration sensor 724, a valve 725, a flow meter 726, in addition to the gas supply pipe 72 described with reference to FIG. A heater 727 is further provided.

The regulator 721 is arranged in the gas supply pipe 72. The regulator 721 adjusts the pressure of the gas supply channel. The regulator 721 is, for example, an electropneumatic regulator.

The temperature sensor 722 detects the temperature of the gas G flowing through the gas supply pipe 72. The pressure sensor 723 detects the pressure of the gas supply channel. The concentration sensor 724 detects the concentration of the inert component contained in the gas G. Hereinafter, the temperature of the gas G flowing through the gas supply pipe 72 may be described as “the temperature of the gas G”. In addition, the concentration of the inert component contained in the gas G may be described as “the concentration of the gas G”.

The valve 725 is disposed on the gas supply pipe 72. The valve 725 controls the ejection flow rate of the gas G ejected from the gas nozzle 71. Further, the valve 725 controls a rising characteristic and a falling characteristic of the ejection flow rate of the gas G. More specifically, the ejection flow rate of the gas G is adjusted according to the opening of the valve 725. The rising characteristic of the gas G ejection flow is adjusted according to the speed at which the valve 725 is opened, and the falling characteristic of the gas G ejection flow is adjusted according to the speed at which the valve 725 is closed. The valve 725 is, for example, a motor valve.

The flow meter 726 detects the flow rate of the gas G flowing through the gas supply pipe 72. In other words, the ejection flow rate of the gas G is detected. The heater 727 heats the gas G flowing through the gas supply pipe 72.

Next, the processing liquid circulation unit 300, the first processing liquid component supply unit 510, the second processing liquid component supply unit 520, and the processing liquid recovery unit 600 will be described with reference to FIG. FIG. 8 is a schematic diagram illustrating the processing liquid circulation unit 300, the first processing liquid component supply unit 510, the second processing liquid component supply unit 520, and the processing liquid recovery unit 600 according to the present embodiment. As shown in FIG. 8, the substrate processing apparatus 100 further includes a processing liquid circulation unit 300, a first processing liquid component supply unit 510, a second processing liquid component supply unit 520, and a processing liquid recovery unit 600.

The processing liquid circulation unit 300 circulates the processing liquid L. Specifically, the processing liquid circulation unit 300 includes a preparation tank 301, a circulation pipe 302, a heater 303, a pump 304, a valve 305, a relief valve 306, a relief pipe 307, a temperature sensor 308, A concentration sensor 309, a pressure sensor 310, and a flow meter 311 are provided.

(4) The preparation tank 301 stores the processing liquid L. The circulation pipe 302 forms a circulation flow path through which the processing liquid L circulates. The processing liquid supply pipe 42 is connected to the circulation pipe 302.

The heater 303 heats the processing liquid L flowing through the circulation pipe 302. Pump 304 is arranged in circulation pipe 302. The pump 304 sucks up the processing liquid L from the mixing tank 301 and sends the processing liquid L to the circulation pipe 302.

The valve 305 is disposed in the circulation pipe 302. The valve 305 controls the flow rate of the processing liquid L flowing through the circulation pipe 302. Specifically, the flow rate of the processing liquid L flowing through the circulation pipe 302 is adjusted according to the opening of the valve 305. The valve 305 is, for example, a motor valve. Hereinafter, the flow rate of the processing liquid L flowing through the circulation pipe 302 may be referred to as “processing liquid circulation flow rate”.

The relief valve 306 is arranged in the circulation pipe 302. The relief pipe 307 is connected to the relief valve 306. When the relief valve 306 is opened, the processing liquid L flows from the circulation pipe 302 to the relief pipe 307. The relief pipe 307 guides the processing liquid L flowing from the relief valve 306 to the preparation tank 301. The pressure in the circulation channel is adjusted according to the opening of the relief valve 306.

The temperature sensor 308 detects the temperature of the processing liquid L flowing through the circulation pipe 302. The concentration sensor 309 detects the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302. The pressure sensor 310 detects the pressure in the circulation channel. The flow meter 311 detects the processing liquid circulation flow rate. Hereinafter, the temperature of the processing liquid L flowing through the circulation pipe 302 may be referred to as “second processing liquid temperature”. In addition, the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302 may be referred to as “second processing liquid concentration”.

The first processing liquid component supply unit 510 supplies the first processing liquid component L1 to the preparation tank 301. The second processing liquid component supply unit 520 supplies the second processing liquid component L2 to the preparation tank 301. In the mixing tank 301, the first processing liquid component L1 and the second processing liquid component L2 are mixed to generate the processing liquid L. For example, the first processing liquid component L1 is phosphoric acid, hydrofluoric acid, nitric acid, or ammonium hydroxide, and the second processing liquid component L2 is pure water. Alternatively, the first processing liquid component L1 is hydrofluoric acid, and the second processing liquid component L2 is a nitric acid aqueous solution. Alternatively, the first processing liquid component L1 is a nitric acid aqueous solution, and the second processing liquid component L2 is hydrofluoric acid. Alternatively, the first processing liquid component L1 is ammonium hydroxide, and the second processing liquid component L2 is hydrogen peroxide. Alternatively, the first processing liquid component L1 is a hydrogen peroxide solution, and the second processing liquid component L2 is an ammonium hydroxide.

The first processing liquid component supply unit 510 includes a pipe 511, a regulator 512, a pressure sensor 513, and a fixed-rate discharge pump 514. The pipe 511 forms a first processing liquid component supply channel through which the first processing liquid component L1 flows. The pipe 511 guides the first processing liquid component L1 to the preparation tank 301.

The regulator 512 is arranged in the pipe 511. The regulator 512 adjusts the pressure of the first processing liquid component supply flow path. The regulator 512 is, for example, an electropneumatic regulator.

The pressure sensor 513 detects the pressure of the first processing liquid component supply flow path. The fixed-rate discharge pump 514 is disposed on the pipe 511. The constant discharge pump 514 discharges the first processing liquid component L1 by a constant amount.

The second processing liquid component supply unit 520 includes a pipe 521, a regulator 522, and a pressure sensor 523. The pipe 521 forms a second processing liquid component supply channel through which the second processing liquid component L2 flows. The pipe 521 guides the second processing liquid component L2 to the preparation tank 301.

The regulator 522 is disposed in the pipe 521. The regulator 522 adjusts the pressure of the second processing liquid component supply flow path. The regulator 522 is, for example, an electropneumatic regulator. The pressure sensor 523 detects the pressure of the second processing liquid component supply flow path.

(4) The processing liquid recovery unit 600 supplies the used processing liquid L sent from the processing chamber 2 to the preparation tank 301. The processing liquid collecting unit 600 includes a collecting tank 601, a first collecting pipe 602, a second collecting pipe 603, and a pump 604.

The first recovery pipe 602 guides the used processing liquid L from the processing chamber 2 to the recovery tank 601. The collection tank 601 stores the used processing liquid L. The second recovery pipe 603 guides the used processing liquid L from the recovery tank 601 to the preparation tank 301. The pump 604 is disposed on the second recovery pipe 603. The pump 604 sucks up the used processing liquid L from the recovery tank 601 and sends the used processing liquid L to the second recovery pipe 603.

Next, the substrate processing apparatus 100 according to the present embodiment will be described with reference to FIGS. FIG. 9 is a block diagram of the substrate processing apparatus 100. As shown in FIG. 9, the processor 11 executes a computer program stored in the storage unit 12 and executes a processing liquid supply unit 40, a gas supply unit 70, a processing liquid circulation unit 300, a first processing liquid component supply unit. The control unit 510 controls the second processing liquid component supply unit 520 and the processing liquid recovery unit 600.

Specifically, the processor 11 controls the valve 423, the mixing valve 424, the heater 426, and the suckback valve 427 included in the processing liquid supply unit 40.

The processor 11 can control the valve 423 and the mixing valve 424 to adjust the concentration of the etching component (first processing liquid concentration) contained in the processing liquid L flowing through the processing liquid supply pipe 42. The first processing solution concentration is a setting condition of the substrate processing apparatus 100. Further, the processor 11 can adjust the discharge flow rate of the processing liquid L discharged from the processing liquid nozzle 41 by controlling the valve 423. Further, the processor 11 can control the rising and falling characteristics of the discharge flow rate of the processing liquid L by controlling the valve 423. The discharge flow rate of the processing liquid L, the rise characteristic of the discharge flow rate of the processing liquid L, and the fall characteristic of the discharge flow rate of the processing liquid L are set conditions of the substrate processing apparatus 100.

{Circle around (4)} The processor 11 can adjust the generation timing of the signal for starting the discharge of the processing liquid L from the processing liquid nozzle 41 to adjust the discharge start timing of the processing liquid L. Specifically, the signal for starting the discharge of the processing liquid L is a signal for opening the valve 423, and the timing for generating the signal for opening the valve 423 can be adjusted to adjust the timing for starting the discharge of the processing liquid L. . The generation timing of the signal for opening the valve 423 is a setting condition of the substrate processing apparatus 100.

(4) The processor 11 can adjust the generation timing of the signal for stopping the discharge of the processing liquid L from the processing liquid nozzle 41 to adjust the timing of stopping the discharge of the processing liquid L. Specifically, the signal for stopping the discharge of the processing liquid L is a signal for closing the valve 423, and the timing for generating the signal for closing the valve 423 can be adjusted to adjust the timing for stopping the discharge of the processing liquid L. . The generation timing of the signal for closing the valve 423 is a setting condition of the substrate processing apparatus 100.

{Circle around (4)} The processor 11 can adjust the generation timing of the signal for changing the flow rate of the processing liquid L discharged from the processing liquid nozzle 41 to adjust the discharge flow rate change timing of the processing liquid L. Specifically, the signal for changing the flow rate of the processing liquid L is a signal for changing the opening of the valve 423, and the generation timing of the signal for changing the opening of the valve 423 is adjusted to adjust the processing liquid L. Of the discharge flow rate can be adjusted. The generation timing of the signal for changing the opening of the valve 423 is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the temperature of the processing liquid L flowing through the processing liquid supply pipe 42 by controlling the heater 426. Hereinafter, the temperature of the processing liquid L flowing through the processing liquid supply pipe 42 may be referred to as “first processing liquid temperature”. The first processing liquid temperature is a setting condition of the substrate processing apparatus 100.

The processor 11 controls the suckback valve 427 to adjust the suckback speed and the suckback stop position described with reference to FIGS. 1 and 3. The suck back speed and the suck back stop position are set conditions of the substrate processing apparatus 100.

The processor 11 receives signals from the temperature sensor 421, the concentration sensor 422, and the flow meter 425 included in the processing liquid supply unit 40. The signal output from the temperature sensor 421 indicates the first processing liquid temperature. The signal output from the concentration sensor 422 indicates the concentration of the first processing liquid. The signal output from the flow meter 425 indicates the discharge flow rate of the processing liquid L. The first processing liquid temperature, the first processing liquid concentration, and the discharge flow rate of the processing liquid L are execution conditions when performing the etching. The processor 11 causes the storage unit 12 to store information indicating the first processing liquid temperature, the first processing liquid concentration, and the discharge flow rate of the processing liquid L. Further, the processor 11 detects the purity of the processing liquid L based on the signal output from the concentration sensor 422. The purity of the processing liquid L is an execution condition at the time of performing the etching, and the processor 11 causes the storage unit 12 to store information indicating the purity of the processing liquid L.

The processor 11 controls the regulator 721, the valve 725, and the heater 727 included in the gas supply unit 70.

(4) The processor 11 can control the regulator 721 to adjust the pressure of the gas supply channel. The pressure of the gas supply channel is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the valve 725 to adjust the ejection flow rate of the gas G ejected from the gas nozzle 71. In addition, the processor 11 can control the valve 725 to adjust the rising characteristic and the falling characteristic of the ejection flow rate of the gas G. The ejection rate of the gas G, the rising characteristic of the ejection rate of the gas G, and the falling property of the ejection rate of the gas G are set conditions of the substrate processing apparatus 100.

{Circle around (4)} The processor 11 can adjust the generation timing of the signal for starting the ejection of the gas G from the gas nozzle 71 to adjust the ejection start timing of the gas G. Specifically, the signal for starting the ejection of the gas G is a signal for opening the valve 725, and the generation timing of the signal for opening the valve 725 can be adjusted to adjust the timing for starting the ejection of the gas G. The generation timing of the signal for opening the valve 725 is a setting condition of the substrate processing apparatus 100.

{Circle around (4)} The processor 11 can adjust the generation timing of the signal for stopping the ejection of the gas G from the gas nozzle 71 to adjust the timing of stopping the ejection of the gas G. Specifically, the signal for stopping the ejection of the gas G is a signal for closing the valve 725, and the timing for generating the signal for closing the valve 725 can be adjusted to adjust the timing for stopping the ejection of the gas G. The generation timing of the signal for closing the valve 725 is a setting condition of the substrate processing apparatus 100.

{Circle around (4)} The processor 11 can adjust the timing at which the signal for changing the flow rate at which the gas G is ejected from the gas nozzle 71 is generated to adjust the timing at which the gas G is ejected. Specifically, the signal for changing the flow rate at which the gas G is ejected is a signal for changing the opening of the valve 725, and the generation timing of the signal for changing the opening of the valve 725 is adjusted so that the ejection of the gas G is adjusted. The flow rate change timing can be adjusted. The generation timing of the signal for changing the opening of the valve 725 is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the temperature of the gas G flowing through the gas supply pipe 72 by controlling the heater 727. The temperature of the gas G is a setting condition of the substrate processing apparatus 100.

{Circle around (4)} The processor 11 receives signals from the temperature sensor 722, the pressure sensor 723, the concentration sensor 724, and the flow meter 726 included in the processing liquid supply unit 40. The signal output from the temperature sensor 722 indicates the temperature of the gas G flowing through the gas supply pipe 72. The signal output from the pressure sensor 723 indicates the pressure of the gas supply channel. The signal output from the concentration sensor 724 indicates the concentration of the inert component contained in the gas G (the concentration of the gas G). The signal output from the flow meter 726 indicates the ejection flow rate of the gas G. The temperature of the gas G, the pressure of the gas supply flow path, the concentration of the gas G, and the ejection flow rate of the gas G are execution conditions at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the temperature of the gas G, the pressure of the gas supply channel, the concentration of the gas G, and the flow rate of the gas G ejected. Further, the processor 11 detects the purity of the gas G based on the signal output from the concentration sensor 724. The purity of the gas G is an execution condition at the time of performing the etching, and the processor 11 causes the storage unit 12 to store information indicating the purity of the gas G.

The processor 11 controls the heater 303, the pump 304, the valve 305, and the relief valve 306 provided in the processing liquid circulation unit 300.

The processor 11 controls the heater 303 to adjust the temperature of the processing liquid L flowing through the circulation pipe 302 (second processing liquid temperature). The second processing liquid temperature is a setting condition of the substrate processing apparatus 100.

The processor 11 controls the valve 305 to adjust the flow rate of the processing liquid L flowing through the circulation pipe 302 (processing liquid circulation flow rate). The processing liquid circulation flow rate is a setting condition of the substrate processing apparatus 100.

The processor 11 can control the pressure in the circulation flow path by controlling the relief valve 306. The pressure of the circulation channel is a setting condition of the substrate processing apparatus 100.

The processor 11 receives signals from the temperature sensor 308, the concentration sensor 309, the pressure sensor 310, and the flow meter 311 provided in the processing liquid circulation unit 300. The signal output from the temperature sensor 308 indicates the temperature of the processing liquid L flowing through the circulation pipe 302 (second processing liquid temperature). The signal output from the concentration sensor 309 indicates the concentration of the etching component contained in the processing liquid L flowing through the circulation pipe 302 (second processing liquid concentration). The signal output by the pressure sensor 310 indicates the pressure of the circulation flow path. The signal output from the flow meter 311 indicates the processing liquid circulation flow rate. The second processing liquid temperature, the second processing liquid concentration, the pressure of the circulation flow path, and the processing liquid circulating flow rate are execution conditions at the time of performing the etching. The processor 11 causes the storage unit 12 to store information indicating the second processing liquid temperature, the second processing liquid concentration, the pressure of the circulation flow path, and the processing liquid circulation flow rate.

The processor 11 controls the regulator 512 and the fixed-rate discharge pump 514 provided in the first processing liquid component supply unit 510. The processor 11 can control the regulator 512 to adjust the pressure of the first processing liquid component supply flow path. In addition, the processor 11 can control the constant discharge pump 514 to adjust the concentration of the second processing liquid. The pressure of the first processing liquid component supply channel and the concentration of the second processing liquid are set conditions of the substrate processing apparatus 100.

The processor 11 receives a signal from the pressure sensor 513 provided in the first processing liquid component supply unit 510. The signal output from the pressure sensor 513 indicates the pressure of the first processing liquid component supply channel. The pressure of the first processing liquid component supply flow path is an execution condition when performing the etching. The processor 11 causes the storage unit 12 to store information indicating the pressure of the first processing liquid component supply flow path.

The processor 11 controls the regulator 522 included in the second processing liquid component supply unit 520 to adjust the pressure of the second processing liquid component supply flow path. The pressure of the second processing liquid component supply channel is a setting condition of the substrate processing apparatus 100.

The processor 11 receives a signal from the pressure sensor 523 provided in the second processing liquid component supply unit 520. The signal output from the pressure sensor 523 indicates the pressure of the second processing liquid component supply channel. The pressure of the second processing liquid component supply flow path is an execution condition when performing the etching. The processor 11 causes the storage unit 12 to store information indicating the pressure of the second processing liquid component supply flow path.

Next, a substrate processing system 1000 according to the present embodiment will be described with reference to FIG. FIG. 10 is a schematic diagram of a substrate processing system 1000 of the present embodiment. As shown in FIG. 10, the substrate processing system 1000 includes a substrate processing apparatus 100 and an inspection apparatus 200.

(4) The substrate processing apparatus 100 etches the substrate W as described with reference to FIGS. Hereinafter, the substrate W before being etched (the substrate W before being carried into the processing chamber 2) may be referred to as “unprocessed substrate Wb”. The substrate W after the etching may be referred to as “processed substrate Wa”.

The inspection apparatus 200 inspects the processed substrate Wa and creates inspection result data of the processed substrate Wa. The inspection result data indicates an etching execution result. Specifically, the inspection device 200 measures the film thickness at each radial position of the processed substrate Wa. In addition, the inspection apparatus 200 creates data indicating the etching amount for each radial position of the processed substrate Wa based on the measured thickness data and the data of the thickness distribution of the unprocessed substrate Wb.

Next, with reference to FIG. 11, the amount of etching at each radial position of the processed substrate Wa will be described. FIG. 11 is a diagram illustrating an example of an etching amount for each radial position of the processed substrate Wa. In other words, FIG. 11 shows an example of the etching profile. The etching profile is created by plotting the etching amount for each radial position of the processed substrate Wa. In FIG. 11, the vertical axis indicates the etching amount, and the horizontal axis indicates the radial position of the processed substrate Wa.

(4) It is desirable that the etching amount is equal to the target value in the entire area of the processed substrate Wa, but as shown in FIG. 11, the actual etching amount varies. Therefore, the etching amount is an index of the performance or state of the substrate processing apparatus 100. In other words, the amount of etching in the entire area of the processed substrate Wa is a characteristic amount as a result of performing the etching.

(4) It is desirable that the etching amount is uniform over the entire area of the processed substrate Wa. Therefore, the uniformity (dispersion) of the etching amount is an index of the state or performance of the substrate processing apparatus 100. In other words, the uniformity of the etching amount is a characteristic amount of an etching execution result.

データ The data indicating the uniformity of the etching amount is not limited to the dispersion. For example, the maximum value Emax and the minimum value Emin of the etching amount and the average value of the etching amount also indicate the uniformity of the etching amount. Therefore, the maximum value Emax and the minimum value Emin of the etching amount and the average value of the etching amount are also characteristic amounts of the etching execution result. Also, the etching profile shows the uniformity of the etching amount. Therefore, the etching profile is also a feature amount of the execution result of the etching.

Next, the substrate processing apparatus 100 according to the present embodiment will be described with reference to FIG. FIG. 12 is a block diagram of the substrate processing apparatus 100 of the present embodiment. As shown in FIG. 12, the substrate processing apparatus 100 further includes an input unit 13.

The input unit 13 is a user interface device operated by an operator. The input unit 13 inputs data according to the operation of the worker to the processor 11. For example, the input unit 13 includes a keyboard and a mouse. Note that the input unit 13 may include a touch display. In the present embodiment, the operator operates the input unit 13 to input the feature amount of the etching execution result to the processor 11. The processor 11 causes the storage unit 12 to store the feature amount of the execution result of the etching.

Specifically, the operator operates the input unit 13 to input data indicating the etching amount in the entire area of the processed substrate Wa and data indicating the uniformity of the etching amount. The data indicating the etching amount in the entire area of the processed substrate Wa may be an etching profile. The operator may input one of the etching amount in the entire region of the processed substrate Wa and the uniformity (dispersion) of the etching amount. Further, the operator may input at least one of the maximum value Emax and the minimum value Emin of the etching amount and the average value of the etching amount instead of or in addition to the dispersion. The uniformity (dispersion) of the etching amount may be calculated by an operator or may be calculated by the inspection apparatus 200. Similarly, the maximum value Emax and the minimum value Emin of the etching amount and the average value of the etching amount may be calculated by the operator or may be calculated by the inspection apparatus 200.

The processor 11 causes the storage unit 12 to store the various execution conditions described with reference to FIGS. 3, 5, and 9 and the feature amount of the etching execution result. The storage unit 12 includes, as execution conditions, data indicating the type of film included in the unprocessed substrate Wb, data indicating the film thickness distribution of the unprocessed substrate Wb, data indicating the thickness of the unprocessed substrate Wb, Data indicating the surface state of the unprocessed substrate Wb is stored in advance. The type of the film includes, for example, at least one of a silicon oxide film and a silicon nitride film.

The processor 11 corrects at least one of the various setting conditions described with reference to FIGS. 3 and 9 based on the various execution conditions and the feature amount of the etching execution result. Generate

Next, with reference to FIG. 13, a description will be given of a method of correcting the setting conditions executed by the substrate processing apparatus 100 of the present embodiment. FIG. 13 is a flowchart illustrating the correction method according to the present embodiment. As shown in FIG. 13, the correction method according to the present embodiment includes steps S11 to S13.

When correcting the setting condition, the processor 11 first stores the execution condition described with reference to FIGS. 3, 5, 9, and 12, and the feature amount described with reference to FIG. (Step S11).

Next, the processor 11 reads out and acquires the execution condition and the characteristic amount from the storage unit 12, and based on the acquired execution condition and the characteristic amount, among the various setting conditions described with reference to FIGS. Correction data for correcting at least one setting condition is generated (step S12).

Next, the processor 11 corrects the corresponding setting condition based on the correction data (step S13), and ends the processing shown in FIG.

プロセッサ The processor 11 of the present embodiment generates correction data using a learned model generated by machine learning. Specifically, the processor 11 inputs the execution conditions and the feature amounts read and acquired from the storage unit 12 to the learned model. As a result, correction data is output from the learned model. The machine learning is, for example, any one of supervised learning, unsupervised learning, semi-supervised learning, reinforcement learning, and deep learning.

Next, the learned model 130 of this embodiment will be described with reference to FIG. FIG. 14 is a schematic diagram of the learned model 130. As shown in FIG. 14, the learned model 130 is a neural network. The processor 11 generates correction data using a neural network. Hereinafter, the learned model 130 may be referred to as a “neural network 130”.

よう As shown in FIG. 14, the neural network 130 has an input layer 131, an intermediate layer 132, and an output layer 133. The processor 11 inputs the execution conditions and the characteristic amounts read and acquired from the storage unit 12 to the input layer 131. As a result, the correction data is output from the output layer 133. The setting condition to be corrected may be determined in advance, or the neural network 130 may determine the setting condition to be corrected. Although the neural network 130 shown in FIG. 14 has one intermediate layer 132, the neural network 130 may have a multilayer structure.

Next, machine learning executed by the substrate processing apparatus 100 according to the present embodiment will be described with reference to FIG. FIG. 15 is a flowchart illustrating the learning method according to the present embodiment. As shown in FIG. 15, the learning method according to the present embodiment includes steps S21 to S23.

When executing machine learning, teacher information (teacher data) is input to the processor 11 (step S21). The processor 11 causes the storage unit 12 to store the input teacher information. The teacher information is information obtained when the feature amount described with reference to FIG. 12 indicates an optimal value. That is, the teacher information includes the execution condition obtained when the feature value indicates the optimum value, and the feature value indicating the optimum value. Further, the teacher information includes a setting condition obtained when the feature value indicates an optimum value.

Next, the processor 11 reads and acquires teacher information (execution conditions, feature amounts, and setting conditions) from the storage unit 12, executes machine learning based on the acquired teacher information (step S22), and acquires the learned model 130 Is generated (step S23), and the processing shown in FIG. 15 ends. Specifically, the processor 11 measures a change in the etching amount according to the execution condition and the setting condition, and a change in the uniformity of the etching amount according to the execution condition and the setting condition, from a plurality of pieces of teacher information. The weight coefficient is updated based on.

The embodiment 1 has been described above. According to the present embodiment, the setting condition can be corrected (adjusted) without the operator manually changing the setting condition. Therefore, the burden on the worker can be reduced.

The setting conditions may be a part of the setting conditions described in the present embodiment.

環境 In addition, the environmental conditions of the factory where the substrate processing apparatus 100 is installed may be added to the execution conditions. Specifically, information indicating the temperature, humidity, oxygen concentration, ammonia concentration, VOC concentration, and atmospheric pressure of the atmosphere in which the substrate processing apparatus 100 is installed, and the altitude of the location where the factory is installed are used as execution conditions by the processor 11. May be entered. In this case, temperature data, humidity data, oxygen concentration data, ammonia concentration data, VOC concentration are obtained from temperature sensors, humidity sensors, oxygen concentration sensors, ammonia concentration sensors, VOC concentration sensors, barometric pressure sensors, and altitude sensors installed in the factory. Data, pressure data, and altitude data are input to the processor 11.

[Embodiment 2]
Next, a second embodiment of the present invention will be described with reference to FIG. However, items different from the first embodiment will be described, and description of the same items as the first embodiment will be omitted. The second embodiment is different from the first embodiment in that the correction data generation device 1100 generates correction data.

FIG. 16 is a schematic diagram of a substrate processing system 1000 according to the second embodiment. As shown in FIG. 16, a substrate processing system 1000 according to the second embodiment includes a substrate processing apparatus 100, an inspection apparatus 200, and a correction data generation apparatus 1100.

The substrate processing apparatus 100 includes the communication interface 14. The communication interface 14 controls communication with the correction data generation device 1100. Specifically, the communication interface 14 transmits data indicating the execution condition to the correction data generation device 1100. Further, the communication interface 14 receives the correction data from the correction data generation device 1100. The communication interface 14 is, for example, a LAN board or a wireless LAN board. The substrate processing apparatus 100 corrects (adjusts) the setting condition of the correction target based on the correction data received from the correction data generation apparatus 1100.

The inspection device 200 includes the communication interface 201. The communication interface 201 controls communication with the correction data generation device 1100. Specifically, the communication interface 201 transmits data indicating the feature amount to the correction data generation device 1100. The communication interface 201 is, for example, a LAN board or a wireless LAN board.

The correction data generation device 1100 includes a communication interface 1101 and a control unit 1110. The correction data generation device 1100 is, for example, a server device.

The communication interface 1101 controls communication with the substrate processing apparatus 100 and communication with the inspection apparatus 200. Specifically, the communication interface 1101 receives data indicating an execution condition from the substrate processing apparatus 100. Further, the communication interface 1101 receives data indicating the feature amount from the inspection device 200. Further, the communication interface 1101 transmits correction data to the substrate processing apparatus 100.

The control unit 1110 generates correction data based on the execution condition received from the substrate processing apparatus 100 and the feature amount from the inspection apparatus 200. Specifically, the control unit 1110 includes a processor 1111 and a storage unit 1112. The processor 1111 is, for example, a central processing unit (CPU). Alternatively, the processor 1111 is a general-purpose computer. The storage unit 1112 stores data and a computer program. Storage unit 1112 includes a main storage device and an auxiliary storage device. The main storage device is constituted by, for example, a semiconductor memory. The auxiliary storage device includes, for example, a semiconductor memory and / or a hard disk drive. The storage unit 1112 may include a removable medium.

The processor 1111 generates the correction data based on the execution conditions and the characteristic amounts, similarly to the processor 11 described in the first embodiment. After generating the correction data, the processor 1111 transmits the correction data to the substrate processing apparatus 100 via the communication interface 1101. The processor 1111 generates the learned model 130 based on teacher information (teacher data), similarly to the processor 11 described in the first embodiment. Note that, among the teacher information, the data indicating the execution condition and the data indicating the setting condition are transmitted from the substrate processing apparatus 100 to the correction data generation apparatus 1100. The inspection device 200 transmits data indicating the feature amount to the correction data generation device 1100 in the teacher information.

The embodiment 2 has been described above. According to the present embodiment, as in the first embodiment, the setting condition can be corrected (adjusted) without the operator manually changing the setting condition. Therefore, the burden on the worker can be reduced.

The embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above embodiment, and can be implemented in various modes without departing from the gist of the present invention.

For example, in the embodiment of the present invention, the inspection apparatus 200 measures the film thickness, but the substrate processing apparatus 100 may include a film thickness measurement sensor for measuring the film thickness.

In the embodiment of the present invention, the etching profile is prepared by plotting the etching amount for each radial position of the processed substrate Wa. However, the etching profile may be prepared based on the measurement result of the thickness of the processed substrate Wa. Good.

Further, in the embodiment of the present invention, based on the image signal (temperature distribution data) generated by the thermographic camera 101, the processor 11 determines the temperature of the processing liquid L at the tip of the processing liquid nozzle 41 and the gas at the tip of the gas nozzle 71. The processor 11 detects the temperature of the processing liquid L at the tip of the processing liquid nozzle 41 and the temperature of the gas G at the tip of the gas nozzle 71 based on the output signals of the temperature sensor 421 and the temperature sensor 722. May be detected.

Further, in the embodiment of the present invention, based on the imaging signal generated by the video camera 102, the processor 11 starts the discharge timing of the processing liquid L, stops the discharge of the processing liquid L, changes the discharge flow rate of the processing liquid L, The discharge flow rate rising characteristic of the processing liquid L, the discharge flow falling characteristic of the processing liquid L, the gas G ejection start timing, the gas G ejection stop timing, the gas G ejection flow change timing, the gas G ejection flow rising property, and Although the ejection flow fall characteristic of the gas G is detected, the processor 11 may detect the discharge start timing of the processing liquid L based on the output signals of the flow meter 425 and the flow meter 726.

Also, in the embodiment of the present invention, the purity of the processing liquid L is detected using the concentration sensor 422. However, the purity of the processing liquid L may be detected using a resistivity meter. Similarly, in the embodiment of the present invention, the purity of the gas G is detected using the concentration sensor 724, but the purity of the gas G may be detected using a resistivity meter.

Further, in the embodiment of the present invention, the eccentricity of the substrate W and the surface runout of the substrate W are detected by using the video camera 102, but the eccentricity of the substrate W and the surface runout of the substrate W are detected by using the displacement sensor. It may be detected.

The correction data may be generated using a part of the execution conditions described in the embodiment of the present invention. Preferably, the execution conditions used are: exhaust wind speed, exhaust air volume, substrate W rotational speed, substrate W rotational acceleration, substrate W rotational speed change timing, radial position of the processing liquid nozzle 41, processing liquid The moving speed of the nozzle 41, the acceleration of the processing liquid nozzle 41, the change timing of the radial position of the processing liquid nozzle 41, the changing timing of the moving speed of the processing liquid nozzle 41, the vertical position of the liquid receiving part 8, the liquid receiving part 8, the acceleration of the liquid receiving portion 8, the timing of changing the position of the liquid receiving portion 8 in the vertical direction, the timing of changing the moving speed of the liquid receiving portion 8, the temperature of the processing liquid L at the tip of the processing liquid nozzle 41, the gas nozzle The temperature of the gas G at the tip of the substrate 71, the substrate surface temperature, the timing of starting the discharge of the processing liquid L, the timing of stopping the discharge of the processing liquid L, the timing of changing the discharge flow rate of the processing liquid L, the processing liquid Flow rate rise characteristics, discharge flow fall characteristics of processing liquid L, gas G ejection start timing, gas G ejection stop timing, gas G ejection flow change timing, gas G ejection flow rise characteristics, gas G ejection Flow rate fall characteristics, suck-back speed of the processing liquid L, suck-back stop position of the processing liquid L, presence or absence of dripping of the processing liquid L, film thickness distribution of the processing liquid L, processing on the upper surface and outer surface of the liquid receiver 8 The presence or absence of the liquid L, the amount of the processing liquid L adhering to the upper surface and the outer surface of the liquid receiving portion 8, the amount of eccentricity of the substrate W, the amount of surface deflection of the substrate W, the supply air velocity, the supply air amount, The concentration of the processing liquid, the flow rate of the processing liquid L, the flow rate of the gas G, the pressure difference of the FFU 21, the substrate heating temperature, the amount of light in the processing chamber 2, the temperature of the liquid receiving section 8, the temperature of the nozzle arm 43, and the temperature of the spin base 31 Temperature, temperature of partition 21 The purity of the processing liquid L, the purity of the gas G, the change in the position of the processing liquid nozzle 41, the change in the shape of the nozzle arm 43, the change in the shape of the heater arm 52, the change in the position of the rinsing liquid nozzle 61, the position of the gas nozzle 71 Change, position change of the liquid receiving portion 8, change in the shape of the liquid receiving portion 8, change in the shape of the chuck pin 32, degree of wear of the chuck pin 32, air flow distribution, substrate surface potential, differential pressure of the valve 233, processing It includes at least one of a liquid atmosphere concentration, a humidity in the processing chamber 2, an oxygen concentration in the processing chamber 2, an ammonia concentration in the processing chamber 2, a VOC concentration in the processing chamber 2, and a pressure in the circulation flow path. More preferably, the execution conditions to be used are: exhaust air speed, exhaust air volume, rotation speed of the substrate W, rotation acceleration of the substrate W, change timing of the rotation speed of the substrate W, radial position of the processing liquid nozzle 41, processing liquid nozzle The moving speed of the processing liquid nozzle 41, the acceleration of the processing liquid nozzle 41, the changing timing of the radial position of the processing liquid nozzle 41, the changing timing of the moving speed of the processing liquid nozzle 41, the vertical position of the liquid receiving section 8, the liquid receiving section 8 Moving speed, acceleration of the liquid receiving portion 8, timing of changing the position of the liquid receiving portion 8 in the vertical direction, timing of changing the moving speed of the liquid receiving portion 8, temperature of the processing liquid L at the tip of the processing liquid nozzle 41, gas nozzle 71. Of the gas G at the tip of the substrate, the substrate surface temperature, the timing of starting the discharge of the processing liquid L, the timing of stopping the discharge of the processing liquid L, the timing of changing the discharge flow rate of the processing liquid L, and the processing liquid L Rise characteristics of discharge flow rate, fall characteristics of discharge flow rate of processing liquid L, timing of starting discharge of gas G, timing of stopping discharge of gas G, timing of changing discharge rate of gas G, rise characteristic of discharge rate of gas G, discharge rate of gas G Fall characteristics, suckback speed of the processing liquid L, stop position of suckback of the processing liquid L, presence / absence of dripping of the processing liquid L, film thickness distribution of the processing liquid L, processing liquid on the upper and outer surfaces of the liquid receiving portion 8 Presence / absence of L, amount of processing liquid L adhering to the upper surface and outer surface of liquid receiving unit 8, amount of eccentricity of substrate W, amount of runout of substrate W, supply air velocity, supply air flow, first processing It includes at least one of a liquid concentration, a discharge flow rate of the processing liquid L, and a discharge flow rate of the gas G.

In the embodiment of the present invention, the substrate W is a semiconductor wafer, but the substrate W is a substrate for a liquid crystal display, a substrate for a field emission display (Field Emission Display: FED), a substrate for an optical disk, and a substrate for a magnetic disk. Or a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell.

Further, in the embodiment of the present invention, the spin chuck 3 is a sandwich type chuck in which the plurality of chuck pins 32 are brought into contact with the peripheral end surface of the substrate W. A vacuum-type chuck that holds the substrate W horizontally by adsorbing the back surface (lower surface) of the substrate to the upper surface of the spin base 31 may be used.

Further, in the embodiment of the present invention, the substrate processing apparatus 100 is of a single-wafer type that processes one substrate at a time, but the substrate processing apparatus 100 may be of a batch type that simultaneously processes a plurality of substrates W. Good.

The present invention is suitably used in a substrate processing apparatus for processing a substrate.

2 processing chamber 8 liquid receiving unit 10 control unit 40 processing liquid supply unit 41 processing liquid nozzle 70 gas supply unit 71 gas nozzle 72 gas supply pipe 100 substrate processing device 200 inspection device 231 exhaust fan 232 exhaust duct 233 valve 300 processing liquid circulation unit 510 First processing liquid component supply unit 520 Second processing liquid component supply unit 1000 Substrate processing system 1100 Correction data generation device 1110 Control unit W Substrate

Claims

A correction method for correcting a setting condition of a substrate processing apparatus that etches a substrate,
An acquisition step of acquiring at least one execution condition among the execution conditions at the time of performing the etching, and at least one feature amount indicating an execution result of the etching;
A generation step of generating correction data for correcting at least one of the setting conditions based on the at least one execution condition and the at least one feature amount;
A correction step in which the substrate processing apparatus corrects the at least one setting condition based on the correction data.
In the acquiring step, the at least one execution condition and the at least one feature amount are input to a learned model generated by machine learning,
The correction method according to claim 1, wherein in the generation step, the correction data is output from the learned model.
Further comprising a learning step of generating the learned model by machine learning the teacher information,
The teacher information is information obtained when the at least one feature value indicates an optimal value, and includes the at least one feature value, the at least one execution condition, and the at least one setting condition. The correction method according to claim 2.
4. The correction method according to claim 1, wherein the at least one feature amount includes at least one of an etching amount and a uniformity of the etching amount. 5.
The substrate processing apparatus includes:
A processing chamber for housing the substrate,
A first nozzle for discharging a processing liquid for etching the substrate toward the substrate,
A supply flow path for supplying the processing liquid to the first nozzle,
A liquid receiving portion for receiving the processing liquid scattered from the substrate,
A second nozzle for ejecting gas toward the substrate;
A fan filter unit that sends air into the processing chamber;
An exhaust fan for exhausting gas from the processing chamber,
Execution conditions at the time of performing the etching are:
A temperature of the processing liquid at a tip of the first nozzle,
The temperature of the gas at the tip of the second nozzle;
A flow rate of the processing liquid discharged from the first nozzle;
A flow rate at which the gas is ejected from the second nozzle,
A timing at which the processing liquid starts discharging from the first nozzle,
A timing at which the gas starts jetting from the second nozzle,
Timing when the discharge of the processing liquid from the first nozzle is stopped,
Timing at which ejection of the gas from the second nozzle stops,
Changing timing of the flow rate of the processing liquid discharged from the first nozzle;
Changing timing of the flow rate at which the gas is ejected from the second nozzle,
A rising characteristic of a flow rate of the processing liquid discharged from the first nozzle,
A rising characteristic of a flow rate at which the gas is ejected from the second nozzle;
Falling characteristics of the flow rate of the processing liquid discharged from the first nozzle;
A falling characteristic of a flow rate at which the gas is ejected from the second nozzle,
Information indicating whether or not the processing liquid is dripping from the tip of the first nozzle;
A concentration of the processing liquid flowing through the supply flow path,
After the discharge of the processing liquid is stopped, a speed at which the processing liquid is sucked from the first nozzle toward an upstream side of the supply flow path,
A position where the sucked processing liquid stops,
A film thickness distribution of the processing solution covering the substrate,
The position of the first nozzle,
A moving speed of the first nozzle;
The acceleration of the first nozzle;
Timing for changing the position of the first nozzle;
Changing timing of the moving speed of the first nozzle;
Information indicating the presence or absence of the treatment liquid on the liquid receiver,
The amount of the treatment liquid attached to the liquid receiving portion,
Rotation speed of the substrate,
Acceleration of the substrate;
Timing of changing the rotation speed of the substrate,
Surface temperature of the substrate,
The amount of eccentricity of the substrate,
Surface runout of the substrate,
The position of the liquid receiver,
The moving speed of the liquid receiver,
Acceleration of the liquid receiver,
Timing of changing the position of the liquid receiving portion,
Timing of changing the moving speed of the liquid receiving portion,
Wind speed of the air that the fan filter unit sends into the processing chamber,
An air volume of the air that the fan filter unit sends into the processing chamber,
Wind speed of gas exhausted from the processing chamber;
The correction method according to any one of claims 1 to 4, further comprising at least one of: a flow rate of gas exhausted from the processing chamber.
The substrate processing apparatus includes:
A processing chamber for housing the substrate,
A first nozzle for discharging a processing liquid for etching the substrate toward the substrate,
A first supply channel for supplying the processing liquid to the first nozzle,
A circulation flow path connected to the first supply flow path and circulating the processing liquid;
A second supply channel for supplying the processing liquid to the circulation channel,
A heating unit for heating the substrate,
A liquid receiving unit for receiving the processing liquid scattered from the substrate,
A second nozzle for ejecting gas toward the substrate;
A third supply channel for supplying the gas to the second nozzle,
A fan filter unit that sends air into the processing chamber;
An exhaust fan that exhausts gas from the processing chamber;
An exhaust duct through which gas exhausted from the processing chamber flows;
And a valve installed in the exhaust duct,
The setting conditions of the substrate processing apparatus are as follows:
A temperature of the processing liquid in the circulation flow path,
A temperature of the processing liquid in the first supply channel;
A temperature of the gas in the third supply channel;
A concentration of the treatment liquid in the circulation flow path,
A concentration of the processing liquid in the first supply channel;
The pressure of the second supply channel;
The pressure of the third supply channel;
Pressure of the circulation channel,
A flow rate of the processing liquid flowing through the circulation flow path,
A flow rate of the processing liquid discharged from the first nozzle;
A flow rate at which the gas is ejected from the second nozzle,
Generation timing of a signal for starting discharge of the processing liquid from the first nozzle;
Generation timing of a signal for starting ejection of the gas from the second nozzle,
Timing of generating a signal for stopping the discharge of the processing liquid from the first nozzle,
Generation timing of a signal for stopping the ejection of the gas from the second nozzle,
Generation timing of a signal for changing a flow rate of the processing liquid discharged from the first nozzle;
Generation timing of a signal for changing a flow rate at which the gas is ejected from the second nozzle;
A rising characteristic of a flow rate of the processing liquid discharged from the first nozzle,
A rising characteristic of a flow rate at which the gas is ejected from the second nozzle;
Falling characteristics of the flow rate of the processing liquid discharged from the first nozzle;
A falling characteristic of a flow rate at which the gas is ejected from the second nozzle,
A speed at which the processing liquid is sucked from the first nozzle toward an upstream side of the first supply flow path after the discharge of the processing liquid is stopped;
A position where the sucked processing liquid stops,
Rotation speed of the substrate,
Acceleration of the substrate;
Timing of changing the rotation speed of the substrate,
The position of the first nozzle,
A moving speed of the first nozzle;
The acceleration of the first nozzle;
Timing for changing the position of the first nozzle;
Changing timing of the moving speed of the first nozzle;
A temperature for heating the substrate,
The position of the liquid receiver,
The moving speed of the liquid receiver,
Acceleration of the liquid receiver,
Timing of changing the position of the liquid receiving portion,
Timing of changing the moving speed of the liquid receiving portion,
A differential pressure of the fan filter unit,
A differential pressure of the valve;
Wind speed of gas exhausted from the processing chamber;
An air volume of gas exhausted from the processing chamber;
The correction method according to any one of claims 1 to 5, further comprising at least one of: a light amount in the processing chamber.
A substrate processing apparatus for etching a substrate,
Setting at least one of the setting conditions of the substrate processing apparatus based on at least one of the execution conditions at the time of performing the etching and at least one feature amount indicating the execution result of the etching; A control unit for generating correction data to be corrected,
The substrate processing apparatus, wherein the control unit corrects the at least one setting condition based on the correction data.
A substrate processing system comprising: a substrate processing apparatus that etches a substrate; and a correction data generation apparatus that outputs correction data for correcting setting conditions of the substrate processing apparatus.
The correction data generation device may be configured to execute at least one of execution conditions at the time of performing the etching and at least one feature amount indicating an execution result of the etching. A control unit that generates correction data for correcting at least one setting condition of
The substrate processing system, wherein the substrate processing apparatus corrects the at least one setting condition based on the correction data.