JP7181314B2 - セラミックヒータ - Google Patents
セラミックヒータ Download PDFInfo
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- JP7181314B2 JP7181314B2 JP2020561350A JP2020561350A JP7181314B2 JP 7181314 B2 JP7181314 B2 JP 7181314B2 JP 2020561350 A JP2020561350 A JP 2020561350A JP 2020561350 A JP2020561350 A JP 2020561350A JP 7181314 B2 JP7181314 B2 JP 7181314B2
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- thermocouple
- passage
- ceramic plate
- temperature measuring
- width
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims description 125
- 238000010438 heat treatment Methods 0.000 claims description 58
- 238000003780 insertion Methods 0.000 claims description 31
- 230000037431 insertion Effects 0.000 claims description 31
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 235000012431 wafers Nutrition 0.000 description 31
- 230000036581 peripheral resistance Effects 0.000 description 10
- 238000009529 body temperature measurement Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Description
ウエハ載置面を有する円盤状のセラミックプレートと、
前記セラミックプレートに内蔵され、前記セラミックプレートの中央部に設けられた一対の端子の一方から前記セラミックプレートの円環状の外周側ゾーンに延び出し、前記外周側ゾーンにおいて複数の折り返し部で折り返されつつ配線されたあと、前記一対の端子の他方に至る形状の外周側抵抗発熱体と、
先端の測温部で前記外周側ゾーンの温度を測定する外周側熱電対と、
を備え、
前記測温部は、前記セラミックプレートを前記ウエハ載置面からみたとき、前記外周側ゾーンのうち前記外周側抵抗発熱体の前記折り返し部同士が向かい合っている部分を除いた位置に配置されている、
ものである。
「ウエハ載置面を有する円盤状のセラミックプレートと、
前記セラミックプレートに内蔵され、前記セラミックプレートの中央部に設けられた一対の端子の一方から前記セラミックプレートの円環状の外周側ゾーンに延び出し、前記外周側ゾーンにおいて複数の折り返し部で折り返されつつ配線されたあと、前記一対の端子の他方に至る形状の外周側抵抗発熱体と、
先端の測温部で前記外周側ゾーンの温度を測定する外周側熱電対と、
前記セラミックプレートの内部に前記ウエハ載置面と平行に設けられ、前記セラミックプレートの中央部のうち前記ウエハ載置面とは反対側の面に開口した挿入口から前記セラミックプレートの外周面の手前の終端位置に至る熱電対通路と、
を備え、
前記終端位置は、前記外周側熱電対の測温部が配置される位置であり、
前記熱電対通路の高さは、前記挿入口から前記終端位置まで一定であり、
前記熱電対通路の幅は、前記挿入口から前記終端位置の手前の第1の中間位置までは一定の幅W1であり、前記第1の中間位置からそれより奥の第2の中間位置まではテーパ面によって徐々に幅が狭くなっており、前記第2の中間位置から前記終端位置までは一定の幅W2となっている、
セラミックヒータ。」
の一例でもある。
Claims (10)
- ウエハ載置面を有する円盤状のセラミックプレートと、
前記セラミックプレートに内蔵され、前記セラミックプレートの中央部に設けられた一対の端子の一方から前記セラミックプレートの円環状の外周側ゾーンに延び出し、前記外周側ゾーンにおいて複数の折り返し部で折り返されつつ配線されたあと、前記一対の端子の他方に至る形状の外周側抵抗発熱体と、
先端の測温部で前記外周側ゾーンの温度を測定する外周側熱電対と、
前記セラミックプレートの内部に前記ウエハ載置面と平行に設けられ、前記セラミックプレートの中央部のうち前記ウエハ載置面とは反対側の面に開口した挿入口から前記セラミックプレートの外周面の手前の終端位置に至る熱電対通路と、
を備え、
前記測温部は、前記セラミックプレートを前記ウエハ載置面からみたとき、前記外周側ゾーンのうち前記外周側抵抗発熱体の前記折り返し部同士が向かい合っている部分を除いた位置に配置され、
前記外周側熱電対の測温部は凸状曲面であり、前記熱電対通路の終端面のうち前記外周側熱電対の測温部が接触する部分は凹状曲面である、
セラミックヒータ。 - 前記外周側ゾーンは、前記セラミックプレートの中心と前記外周側抵抗発熱体の複数の前記折り返し部の各々とを結んだ線分によって複数の扇領域に分割され、
前記測温部が配置される位置は、前記扇領域内に設けられている、
請求項1に記載のセラミックヒータ。 - 前記測温部が配置される位置は、前記セラミックプレートを前記ウエハ載置面からみたときに前記外周側抵抗発熱体の幅の中に設けられている、
請求項1又は2に記載のセラミックヒータ。 - 前記終端位置は、前記外周側熱電対の測温部が配置される位置であり、
前記熱電対通路の高さは、前記挿入口から前記終端位置まで一定であり、
前記熱電対通路の幅は、前記挿入口から前記終端位置の手前の第1の中間位置までは一定の幅W1であり、前記第1の中間位置からそれより奥の第2の中間位置まではテーパ面によって徐々に幅が狭くなっており、前記第2の中間位置から前記終端位置までは一定の幅W2となっている、
請求項1~3のいずれか1項に記載のセラミックヒータ。 - 幅W2は前記外周側熱電対の外径dの1.2倍以上2.2倍以下である、
請求項4に記載のセラミックヒータ。 - 前記終端位置は、前記外周側抵抗発熱体の幅の中に設けられている、
請求項1~5のいずれか1項に記載のセラミックヒ-タ。 - 前記熱電対通路は、断面略四角形の通路であり、前記通路の天井面と側面との境界部は、曲率半径が0.5mm以上のR面である、
請求項1~6のいずれか1項に記載のセラミックヒータ。 - 前記熱電対通路の天井面は、前記挿入口から前記終端位置までの途中に傾斜状の段差を有し、前記天井面のうち前記挿入口から前記段差までの深さは前記段差から前記終端位置までの深さよりも深い、
請求項1~7のいずれか1項に記載のセラミックヒータ。 - 前記熱電対通路と前記一対の端子のそれぞれとの間隔は、2mm以上である、
請求項1~8のいずれか1項に記載のセラミックヒータ。 - 前記熱電対通路の前記挿入口側の壁は、前記セラミックプレートのうち前記ウエハ載置面とは反対側の裏面から前記熱電対通路の奥に向かって湾曲している、
請求項1~9のいずれか1項に記載のセラミックヒータ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018238224 | 2018-12-20 | ||
JP2018238224 | 2018-12-20 | ||
PCT/JP2019/048644 WO2020129798A1 (ja) | 2018-12-20 | 2019-12-12 | セラミックヒータ |
Publications (2)
Publication Number | Publication Date |
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JPWO2020129798A1 JPWO2020129798A1 (ja) | 2021-10-21 |
JP7181314B2 true JP7181314B2 (ja) | 2022-11-30 |
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JP2020561350A Active JP7181314B2 (ja) | 2018-12-20 | 2019-12-12 | セラミックヒータ |
Country Status (6)
Country | Link |
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US (1) | US20210243848A1 (ja) |
JP (1) | JP7181314B2 (ja) |
KR (1) | KR102549820B1 (ja) |
CN (1) | CN112514534B (ja) |
TW (1) | TWI730547B (ja) |
WO (1) | WO2020129798A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11774298B2 (en) * | 2020-02-12 | 2023-10-03 | Tokyo Electron Limited | Multi-point thermocouples and assemblies for ceramic heating structures |
JP7348877B2 (ja) * | 2020-04-20 | 2023-09-21 | 日本碍子株式会社 | セラミックヒータ及びその製法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003347287A (ja) | 2002-05-27 | 2003-12-05 | Kyocera Corp | ウエハ支持部材 |
JP2007142441A (ja) | 2006-12-01 | 2007-06-07 | Kyocera Corp | ウェハ支持部材 |
JP2010177595A (ja) | 2009-01-30 | 2010-08-12 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置 |
WO2012039453A1 (ja) | 2010-09-24 | 2012-03-29 | 日本碍子株式会社 | 半導体製造装置部材 |
JP2012080103A (ja) | 2010-10-01 | 2012-04-19 | Ngk Insulators Ltd | サセプター及びその製法 |
JP2012160368A (ja) | 2011-02-01 | 2012-08-23 | Nihon Ceratec Co Ltd | セラミックスヒータ及びその製造方法 |
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JPS551467U (ja) | 1978-06-20 | 1980-01-08 | ||
JP3904986B2 (ja) * | 2002-06-26 | 2007-04-11 | 京セラ株式会社 | ウェハ支持部材 |
WO2006006391A1 (ja) * | 2004-06-28 | 2006-01-19 | Kyocera Corporation | ウェハ加熱装置と半導体製造装置 |
KR20090012710A (ko) * | 2007-07-31 | 2009-02-04 | 피에스케이 주식회사 | 기판 처리 장치 |
CN105282877B (zh) * | 2014-06-17 | 2019-10-25 | 住友电气工业株式会社 | 用于半导体制造装置的陶瓷加热器 |
-
2019
- 2019-12-12 JP JP2020561350A patent/JP7181314B2/ja active Active
- 2019-12-12 CN CN201980049967.XA patent/CN112514534B/zh active Active
- 2019-12-12 KR KR1020217011815A patent/KR102549820B1/ko active IP Right Grant
- 2019-12-12 WO PCT/JP2019/048644 patent/WO2020129798A1/ja active Application Filing
- 2019-12-16 TW TW108145966A patent/TWI730547B/zh active
-
2021
- 2021-04-19 US US17/233,919 patent/US20210243848A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003347287A (ja) | 2002-05-27 | 2003-12-05 | Kyocera Corp | ウエハ支持部材 |
JP2007142441A (ja) | 2006-12-01 | 2007-06-07 | Kyocera Corp | ウェハ支持部材 |
JP2010177595A (ja) | 2009-01-30 | 2010-08-12 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置 |
WO2012039453A1 (ja) | 2010-09-24 | 2012-03-29 | 日本碍子株式会社 | 半導体製造装置部材 |
JP2012080103A (ja) | 2010-10-01 | 2012-04-19 | Ngk Insulators Ltd | サセプター及びその製法 |
JP2012160368A (ja) | 2011-02-01 | 2012-08-23 | Nihon Ceratec Co Ltd | セラミックスヒータ及びその製造方法 |
Also Published As
Publication number | Publication date |
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KR20210055090A (ko) | 2021-05-14 |
JPWO2020129798A1 (ja) | 2021-10-21 |
CN112514534B (zh) | 2022-10-28 |
CN112514534A (zh) | 2021-03-16 |
KR102549820B1 (ko) | 2023-06-30 |
WO2020129798A1 (ja) | 2020-06-25 |
TW202102052A (zh) | 2021-01-01 |
US20210243848A1 (en) | 2021-08-05 |
TWI730547B (zh) | 2021-06-11 |
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