JP7162738B2 - 構造物及び関連装置の検査方法及び装置 - Google Patents

構造物及び関連装置の検査方法及び装置 Download PDF

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JP7162738B2
JP7162738B2 JP2021521195A JP2021521195A JP7162738B2 JP 7162738 B2 JP7162738 B2 JP 7162738B2 JP 2021521195 A JP2021521195 A JP 2021521195A JP 2021521195 A JP2021521195 A JP 2021521195A JP 7162738 B2 JP7162738 B2 JP 7162738B2
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Prior art keywords
overlay
target
angle
determining
substrate
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Japanese (ja)
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JP2022505239A (ja
JP2022505239A5 (https=
JPWO2020078677A5 (https=
Inventor
バドル、エリー
ミラート、ショーン シャカワット
ミセリ、ジャコモ
ヴェルマ、アロク
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ASML Netherlands BV
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ASML Netherlands BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
JP2021521195A 2018-10-18 2019-09-25 構造物及び関連装置の検査方法及び装置 Active JP7162738B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18201147.8 2018-10-18
EP18201147.8A EP3640735A1 (en) 2018-10-18 2018-10-18 Methods and apparatus for inspection of a structure and associated apparatuses
PCT/EP2019/075819 WO2020078677A1 (en) 2018-10-18 2019-09-25 Methods and apparatus for inspection of a structure and associated apparatuses

Publications (4)

Publication Number Publication Date
JP2022505239A JP2022505239A (ja) 2022-01-14
JP2022505239A5 JP2022505239A5 (https=) 2022-06-22
JPWO2020078677A5 JPWO2020078677A5 (https=) 2022-06-22
JP7162738B2 true JP7162738B2 (ja) 2022-10-28

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JP2021521195A Active JP7162738B2 (ja) 2018-10-18 2019-09-25 構造物及び関連装置の検査方法及び装置

Country Status (8)

Country Link
US (1) US11175592B2 (https=)
EP (1) EP3640735A1 (https=)
JP (1) JP7162738B2 (https=)
KR (1) KR102604928B1 (https=)
CN (1) CN112867970B (https=)
IL (1) IL282180B2 (https=)
TW (2) TWI774219B (https=)
WO (1) WO2020078677A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102877760B1 (ko) * 2020-03-02 2025-10-27 에이에스엠엘 네델란즈 비.브이. 국부 균일성 메트릭을 추론하는 방법
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
EP4016186A1 (en) * 2020-12-18 2022-06-22 ASML Netherlands B.V. Metrology method for measuring an etched trench and associated metrology apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170097575A1 (en) 2015-10-02 2017-04-06 Asml Netherlands B.V. Metrology Method and Apparatus, Computer Program and Lithographic System
US20180239263A1 (en) 2013-10-30 2018-08-23 Asml Netherlands B.V. Inspection Apparatus and Methods, Substrates Having Metrology Targets, Lithographic System and Device Manufacturing Method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7111256B2 (en) * 2002-06-05 2006-09-19 Kla-Tencor Technologies Corporation Use of overlay diagnostics for enhanced automatic process control
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP4922112B2 (ja) * 2006-09-13 2012-04-25 エーエスエムエル マスクツールズ ビー．ブイ． パターン分解フィーチャのためのモデルベースｏｐｃを行うための方法および装置
US8148682B2 (en) * 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
EP2876498B1 (en) 2013-11-22 2017-05-24 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
WO2016096365A1 (en) 2014-12-17 2016-06-23 Asml Netherlands B.V. Method and apparatus for using patterning device topography induced phase
KR20170120153A (ko) * 2015-03-13 2017-10-30 에이에스엠엘 네델란즈 비.브이. 리소그래피 방법 및 리소그래피 장치
CN107430352B (zh) * 2015-03-25 2020-01-21 Asml荷兰有限公司 量测方法、量测设备和器件制造方法
NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
US10615084B2 (en) 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
EP3214713B1 (en) 2016-03-03 2022-05-04 General Electric Technology GmbH Improvements in or relating to electrical power systems
EP3435162A1 (en) * 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180239263A1 (en) 2013-10-30 2018-08-23 Asml Netherlands B.V. Inspection Apparatus and Methods, Substrates Having Metrology Targets, Lithographic System and Device Manufacturing Method
US20170097575A1 (en) 2015-10-02 2017-04-06 Asml Netherlands B.V. Metrology Method and Apparatus, Computer Program and Lithographic System

Also Published As

Publication number Publication date
CN112867970B (zh) 2024-12-27
EP3640735A1 (en) 2020-04-22
IL282180A (en) 2021-05-31
US20200124983A1 (en) 2020-04-23
IL282180B2 (en) 2024-05-01
IL282180B1 (en) 2024-01-01
TW202024584A (zh) 2020-07-01
CN112867970A (zh) 2021-05-28
JP2022505239A (ja) 2022-01-14
TW202134609A (zh) 2021-09-16
KR102604928B1 (ko) 2023-11-21
TWI721601B (zh) 2021-03-11
WO2020078677A1 (en) 2020-04-23
TWI774219B (zh) 2022-08-11
KR20210057174A (ko) 2021-05-20
US11175592B2 (en) 2021-11-16

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