KR102604928B1 - 구조체 및 연관된 장치의 검사를 위한 방법 및 장치 - Google Patents
구조체 및 연관된 장치의 검사를 위한 방법 및 장치 Download PDFInfo
- Publication number
- KR102604928B1 KR102604928B1 KR1020217011455A KR20217011455A KR102604928B1 KR 102604928 B1 KR102604928 B1 KR 102604928B1 KR 1020217011455 A KR1020217011455 A KR 1020217011455A KR 20217011455 A KR20217011455 A KR 20217011455A KR 102604928 B1 KR102604928 B1 KR 102604928B1
- Authority
- KR
- South Korea
- Prior art keywords
- overlay
- determining
- metric
- exposed
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 132
- 238000007689 inspection Methods 0.000 title claims description 19
- 238000005259 measurement Methods 0.000 claims abstract description 49
- 230000003595 spectral effect Effects 0.000 claims abstract description 22
- 230000001419 dependent effect Effects 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 83
- 230000005855 radiation Effects 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 35
- 238000001228 spectrum Methods 0.000 claims description 24
- 238000009826 distribution Methods 0.000 claims description 15
- 238000004590 computer program Methods 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 33
- 238000000059 patterning Methods 0.000 description 30
- 210000001747 pupil Anatomy 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000001459 lithography Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007654 immersion Methods 0.000 description 5
- 238000012804 iterative process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP18201147.8 | 2018-10-18 | ||
| EP18201147.8A EP3640735A1 (en) | 2018-10-18 | 2018-10-18 | Methods and apparatus for inspection of a structure and associated apparatuses |
| PCT/EP2019/075819 WO2020078677A1 (en) | 2018-10-18 | 2019-09-25 | Methods and apparatus for inspection of a structure and associated apparatuses |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210057174A KR20210057174A (ko) | 2021-05-20 |
| KR102604928B1 true KR102604928B1 (ko) | 2023-11-21 |
Family
ID=63914825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217011455A Active KR102604928B1 (ko) | 2018-10-18 | 2019-09-25 | 구조체 및 연관된 장치의 검사를 위한 방법 및 장치 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11175592B2 (https=) |
| EP (1) | EP3640735A1 (https=) |
| JP (1) | JP7162738B2 (https=) |
| KR (1) | KR102604928B1 (https=) |
| CN (1) | CN112867970B (https=) |
| IL (1) | IL282180B2 (https=) |
| TW (2) | TWI774219B (https=) |
| WO (1) | WO2020078677A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102877760B1 (ko) * | 2020-03-02 | 2025-10-27 | 에이에스엠엘 네델란즈 비.브이. | 국부 균일성 메트릭을 추론하는 방법 |
| US11454894B2 (en) * | 2020-09-14 | 2022-09-27 | Kla Corporation | Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof |
| EP4016186A1 (en) * | 2020-12-18 | 2022-06-22 | ASML Netherlands B.V. | Metrology method for measuring an etched trench and associated metrology apparatus |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7111256B2 (en) * | 2002-06-05 | 2006-09-19 | Kla-Tencor Technologies Corporation | Use of overlay diagnostics for enhanced automatic process control |
| JP5159027B2 (ja) * | 2004-06-04 | 2013-03-06 | キヤノン株式会社 | 照明光学系及び露光装置 |
| US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| JP4922112B2 (ja) * | 2006-09-13 | 2012-04-25 | エーエスエムエル マスクツールズ ビー.ブイ. | パターン分解フィーチャのためのモデルベースopcを行うための方法および装置 |
| US8148682B2 (en) * | 2009-12-29 | 2012-04-03 | Hitachi, Ltd. | Method and apparatus for pattern position and overlay measurement |
| US9958791B2 (en) * | 2013-10-30 | 2018-05-01 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| EP2876498B1 (en) | 2013-11-22 | 2017-05-24 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| US10210606B2 (en) * | 2014-10-14 | 2019-02-19 | Kla-Tencor Corporation | Signal response metrology for image based and scatterometry overlay measurements |
| WO2016096365A1 (en) | 2014-12-17 | 2016-06-23 | Asml Netherlands B.V. | Method and apparatus for using patterning device topography induced phase |
| KR20170120153A (ko) * | 2015-03-13 | 2017-10-30 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 방법 및 리소그래피 장치 |
| CN107430352B (zh) * | 2015-03-25 | 2020-01-21 | Asml荷兰有限公司 | 量测方法、量测设备和器件制造方法 |
| NL2017300A (en) * | 2015-08-27 | 2017-03-01 | Asml Netherlands Bv | Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method |
| NL2017452A (en) * | 2015-10-02 | 2017-04-11 | Asml Netherlands Bv | Metrology method and apparatus, computer program and lithographic system |
| US10615084B2 (en) | 2016-03-01 | 2020-04-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values |
| EP3214713B1 (en) | 2016-03-03 | 2022-05-04 | General Electric Technology GmbH | Improvements in or relating to electrical power systems |
| EP3435162A1 (en) * | 2017-07-28 | 2019-01-30 | ASML Netherlands B.V. | Metrology method and apparatus and computer program |
-
2018
- 2018-10-18 EP EP18201147.8A patent/EP3640735A1/en not_active Withdrawn
-
2019
- 2019-09-25 WO PCT/EP2019/075819 patent/WO2020078677A1/en not_active Ceased
- 2019-09-25 JP JP2021521195A patent/JP7162738B2/ja active Active
- 2019-09-25 IL IL282180A patent/IL282180B2/en unknown
- 2019-09-25 CN CN201980068958.5A patent/CN112867970B/zh active Active
- 2019-09-25 KR KR1020217011455A patent/KR102604928B1/ko active Active
- 2019-10-15 TW TW110103196A patent/TWI774219B/zh active
- 2019-10-15 TW TW108137012A patent/TWI721601B/zh active
- 2019-10-17 US US16/656,094 patent/US11175592B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112867970B (zh) | 2024-12-27 |
| EP3640735A1 (en) | 2020-04-22 |
| IL282180A (en) | 2021-05-31 |
| US20200124983A1 (en) | 2020-04-23 |
| IL282180B2 (en) | 2024-05-01 |
| IL282180B1 (en) | 2024-01-01 |
| TW202024584A (zh) | 2020-07-01 |
| JP7162738B2 (ja) | 2022-10-28 |
| CN112867970A (zh) | 2021-05-28 |
| JP2022505239A (ja) | 2022-01-14 |
| TW202134609A (zh) | 2021-09-16 |
| TWI721601B (zh) | 2021-03-11 |
| WO2020078677A1 (en) | 2020-04-23 |
| TWI774219B (zh) | 2022-08-11 |
| KR20210057174A (ko) | 2021-05-20 |
| US11175592B2 (en) | 2021-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11320745B2 (en) | Measuring a process parameter for a manufacturing process involving lithography | |
| US8908147B2 (en) | Method and apparatus for determining an overlay error | |
| KR101457030B1 (ko) | 오버레이 오차를 결정하는 장치 및 방법 | |
| KR101850407B1 (ko) | 구조체의 관심 파라미터 값의 재구성의 품질을 평가하는 방법, 검사 장치 및 컴퓨터 프로그램 제품 | |
| US9541500B2 (en) | Method for calibrating a manufacturing process model | |
| JP4802167B2 (ja) | 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法 | |
| KR101425627B1 (ko) | 기판 상에서 대상물의 개략적인 구조를 결정하기 위한 방법, 검사 장치 및 기판 | |
| US9201310B2 (en) | Method of measuring overlay error and a device manufacturing method | |
| JP4828499B2 (ja) | 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法 | |
| KR102604928B1 (ko) | 구조체 및 연관된 장치의 검사를 위한 방법 및 장치 | |
| NL2005510A (en) | Method and apparatus for overlay measurement. | |
| NL2003693A (en) | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method for determining a property of a substrate. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20210416 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20230315 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20230922 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20231117 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20231117 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |