TWI774219B - 用於結構及相關設備之檢測方法和設備 - Google Patents

用於結構及相關設備之檢測方法和設備 Download PDF

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Publication number
TWI774219B
TWI774219B TW110103196A TW110103196A TWI774219B TW I774219 B TWI774219 B TW I774219B TW 110103196 A TW110103196 A TW 110103196A TW 110103196 A TW110103196 A TW 110103196A TW I774219 B TWI774219 B TW I774219B
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TW
Taiwan
Prior art keywords
exposed
feature
substrate
overlay
target
Prior art date
Application number
TW110103196A
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English (en)
Chinese (zh)
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TW202134609A (zh
Inventor
埃利 巴德爾
米拉 肖恩 夏卡瓦
吉亞科摩 米瑟立
艾羅克 沃馬
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
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Publication of TW202134609A publication Critical patent/TW202134609A/zh
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Publication of TWI774219B publication Critical patent/TWI774219B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
TW110103196A 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備 TWI774219B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18201147.8 2018-10-18
EP18201147.8A EP3640735A1 (en) 2018-10-18 2018-10-18 Methods and apparatus for inspection of a structure and associated apparatuses

Publications (2)

Publication Number Publication Date
TW202134609A TW202134609A (zh) 2021-09-16
TWI774219B true TWI774219B (zh) 2022-08-11

Family

ID=63914825

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110103196A TWI774219B (zh) 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備
TW108137012A TWI721601B (zh) 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108137012A TWI721601B (zh) 2018-10-18 2019-10-15 用於結構及相關設備之檢測方法和設備

Country Status (8)

Country Link
US (1) US11175592B2 (https=)
EP (1) EP3640735A1 (https=)
JP (1) JP7162738B2 (https=)
KR (1) KR102604928B1 (https=)
CN (1) CN112867970B (https=)
IL (1) IL282180B2 (https=)
TW (2) TWI774219B (https=)
WO (1) WO2020078677A1 (https=)

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* Cited by examiner, † Cited by third party
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KR102877760B1 (ko) * 2020-03-02 2025-10-27 에이에스엠엘 네델란즈 비.브이. 국부 균일성 메트릭을 추론하는 방법
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
EP4016186A1 (en) * 2020-12-18 2022-06-22 ASML Netherlands B.V. Metrology method for measuring an etched trench and associated metrology apparatus

Citations (5)

* Cited by examiner, † Cited by third party
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EP2259138A2 (en) * 2004-06-04 2010-12-08 Canon Kabushiki Kaisha Illumination optical system and exposure apparatus
EP1901122B1 (en) * 2006-09-13 2014-05-07 ASML MaskTools B.V. Method and apparatus for performing model-based OPC for pattern decomposed feature
US20170097575A1 (en) * 2015-10-02 2017-04-06 Asml Netherlands B.V. Metrology Method and Apparatus, Computer Program and Lithographic System
US9958791B2 (en) * 2013-10-30 2018-05-01 Asml Netherlands B.V. Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method
TWI638238B (zh) * 2013-11-22 2018-10-11 卡爾蔡司Ｓｍｔ有限公司 微影投影曝光設備的照明系統

Family Cites Families (11)

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US7111256B2 (en) * 2002-06-05 2006-09-19 Kla-Tencor Technologies Corporation Use of overlay diagnostics for enhanced automatic process control
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US8148682B2 (en) * 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
WO2016096365A1 (en) 2014-12-17 2016-06-23 Asml Netherlands B.V. Method and apparatus for using patterning device topography induced phase
KR20170120153A (ko) * 2015-03-13 2017-10-30 에이에스엠엘 네델란즈 비.브이. 리소그래피 방법 및 리소그래피 장치
CN107430352B (zh) * 2015-03-25 2020-01-21 Asml荷兰有限公司 量测方法、量测设备和器件制造方法
NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
US10615084B2 (en) 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
EP3214713B1 (en) 2016-03-03 2022-05-04 General Electric Technology GmbH Improvements in or relating to electrical power systems
EP3435162A1 (en) * 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2259138A2 (en) * 2004-06-04 2010-12-08 Canon Kabushiki Kaisha Illumination optical system and exposure apparatus
EP1901122B1 (en) * 2006-09-13 2014-05-07 ASML MaskTools B.V. Method and apparatus for performing model-based OPC for pattern decomposed feature
US9958791B2 (en) * 2013-10-30 2018-05-01 Asml Netherlands B.V. Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method
TWI638238B (zh) * 2013-11-22 2018-10-11 卡爾蔡司Ｓｍｔ有限公司 微影投影曝光設備的照明系統
US20170097575A1 (en) * 2015-10-02 2017-04-06 Asml Netherlands B.V. Metrology Method and Apparatus, Computer Program and Lithographic System

Also Published As

Publication number Publication date
CN112867970B (zh) 2024-12-27
EP3640735A1 (en) 2020-04-22
IL282180A (en) 2021-05-31
US20200124983A1 (en) 2020-04-23
IL282180B2 (en) 2024-05-01
IL282180B1 (en) 2024-01-01
TW202024584A (zh) 2020-07-01
JP7162738B2 (ja) 2022-10-28
CN112867970A (zh) 2021-05-28
JP2022505239A (ja) 2022-01-14
TW202134609A (zh) 2021-09-16
KR102604928B1 (ko) 2023-11-21
TWI721601B (zh) 2021-03-11
WO2020078677A1 (en) 2020-04-23
KR20210057174A (ko) 2021-05-20
US11175592B2 (en) 2021-11-16

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