JP7160825B2 - クライオポンプ及び他の大容量構造用の窒化ホウ素ナノチューブ材料の形成方法 - Google Patents
クライオポンプ及び他の大容量構造用の窒化ホウ素ナノチューブ材料の形成方法 Download PDFInfo
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- JP7160825B2 JP7160825B2 JP2019548542A JP2019548542A JP7160825B2 JP 7160825 B2 JP7160825 B2 JP 7160825B2 JP 2019548542 A JP2019548542 A JP 2019548542A JP 2019548542 A JP2019548542 A JP 2019548542A JP 7160825 B2 JP7160825 B2 JP 7160825B2
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/08—Compounds containing boron and nitrogen, phosphorus, oxygen, sulfur, selenium or tellurium
- C01B35/14—Compounds containing boron and nitrogen, phosphorus, sulfur, selenium or tellurium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0648—After-treatment, e.g. grinding, purification
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
- B01D9/0018—Evaporation of components of the mixture to be separated
- B01D9/0022—Evaporation of components of the mixture to be separated by reducing pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/13—Nanotubes
Description
Claims (16)
- 窒化ホウ素ナノチューブ(BNNT)構造の形成方法であって、前記方法は、
足場支持構造を熱可塑性プラスチック、インジウム、スズ、スズ合金、はんだ、及び低温溶融性ガラスのうち1つでコーティングすることと、
分散剤にBNNTを分散させることと、
分散した前記BNNTを前記足場支持構造に適用して、前記足場支持構造内に前記BNNTを分散させ、前記足場支持構造により支持されるようにすることと、
前記分散剤を取り除き、前記足場支持構造上に前記BNNTを残して、前記BNNT構造を提供することと、
を含み、
前記分散したBNNTを適用することは、前記分散したBNNTを前記支持構造にスプレーコーティングすることと、前記支持構造上の前記分散したBNNTを凍結乾燥することと、前記分散したBNNTを、前記支持構造及び第2の支持構造上に拡散することと、のうち少なくとも1つを含むことを特徴とする、方法。 - 前記足場支持構造は、BNNT繊維、ステンレス鋼、ポリマー繊維、炭素繊維、及びガラス繊維のうち少なくとも1つを含むことを特徴とする、請求項1に記載の方法。
- 前記BNNTは、部分的に精製したBNNT材料、及び精製BNNT材料のうち少なくとも1つを含むことを特徴とする、請求項1に記載の方法。
- 前記BNNTをコーティングした支持構造をベークすることを更に含むことを特徴とする、請求項1に記載の方法。
- 前記ベークすることは、約60~140℃のベーク温度で実施されることを特徴とする、請求項4に記載の方法。
- 前記分散剤は、イソプロピルアルコール、メチルアルコール、エチルアルコール、及びアセトンのうち少なくとも1つを含むことを特徴とする、請求項1に記載の方法。
- 複数の分散したBNNTの層を前記足場支持構造に適用すること
を更に含むことを特徴とする、請求項1に記載の方法。 - 前記BNNTをコーティングした支持構造を圧縮することを更に含むことを特徴とする、請求項1に記載の方法。
- 前記BNNTをコーティングした支持構造を真空でベークすることは、約200℃のベーク温度で実施され、かつ/又は、前記BNNTをコーティングした支持構造を空気中でベークすることは、約450℃のベーク温度で実施されることを特徴とする、請求項1に記載の方法。
- 前記分散したBNNTを適用することは、前記分散したBNNTを前記足場支持構造上で凍結することと、前記分散剤を蒸発させることと、を含むことを特徴とする、請求項1に記載の方法。
- 前記分散剤を蒸発させることは、前記分散したBNNT材料を真空に配置することと、前記分散剤の温度を前記分散剤の凝固点未満まで下げることと、を含むことを特徴とする、請求項10に記載の方法。
- 前記分散剤は、蒸留水と、メチルアルコール、エチルアルコール、イソプロピルアルコール、及びアセトンのうち少なくとも1つと、を含むことを特徴とする、請求項10に記載の方法。
- 前記支持構造はバッキ-ペーパー/マットを含み、前記バッキ-ペーパー/マットを所望の形状に形状化することと、前記形状化したバッキ-ペーパー/マット及びフィルターに前記分散したBNNTを注入し、BNNTでコーティングしたバッキ-ペーパー/マット及びフィルターを形成することと、前記BNNTでコーティングしたバッキ-ペーパー/マット及びフィルターを乾燥させることと、を更に含むことを特徴とする、請求項1に記載の方法。
- 前記分散剤は、メチルアルコール、エチルアルコール、イソプロピルアルコール、及びアセトンのうち少なくとも1つを含むことを特徴とする、請求項13に記載の方法。
- 前記分散したBNNTは、分散剤1mL当たり、約0.1~3mgのBNNT材料を有するBNNT糊を含むことを特徴とする、請求項1に記載の方法。
- 前記BNNT糊を前記支持構造及び第2の支持構造上に拡散させることと、前記支持構造及び前記第2の支持構造を結合することと、前記結合した支持構造及び前記第2の支持構造を圧縮することと、前記結合した支持構造及び第2の支持構造を加熱して分散剤を蒸発させることと、を更に含むことを特徴とする、請求項15に記載の方法。
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US201662427583P | 2016-11-29 | 2016-11-29 | |
US62/427,583 | 2016-11-29 | ||
PCT/US2017/063752 WO2018102437A1 (en) | 2016-11-29 | 2017-11-29 | Boron nitride nanotube materials for cryopumps and other large volume configurations |
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JP2020500829A JP2020500829A (ja) | 2020-01-16 |
JP2020500829A5 JP2020500829A5 (ja) | 2021-01-14 |
JP7160825B2 true JP7160825B2 (ja) | 2022-10-25 |
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US (1) | US11866327B2 (ja) |
EP (1) | EP3548435A4 (ja) |
JP (1) | JP7160825B2 (ja) |
KR (1) | KR102524017B1 (ja) |
AU (1) | AU2017368072B2 (ja) |
CA (1) | CA3043510A1 (ja) |
WO (1) | WO2018102437A1 (ja) |
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US20220099151A1 (en) * | 2019-01-07 | 2022-03-31 | Bnnt, Llc | Boron nitride nanotube vibration damping optimization |
KR102393063B1 (ko) | 2019-10-21 | 2022-05-03 | 한국과학기술연구원 | 질화붕소 나노튜브의 정제방법 |
KR102482650B1 (ko) * | 2021-02-25 | 2022-12-29 | (주)에프에스티 | 질화 붕소 나노 구조 층을 포함하는 극자외선 리소그라피용 펠리클 막 및 그 제조방법 |
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WO2016100715A1 (en) | 2014-12-17 | 2016-06-23 | Bnnt, Llc | Boron nitride nanotube enhanced electrical components |
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US7419601B2 (en) * | 2003-03-07 | 2008-09-02 | Seldon Technologies, Llc | Nanomesh article and method of using the same for purifying fluids |
US7618647B2 (en) * | 2003-10-03 | 2009-11-17 | Boston Scientific Scimed, Inc. | Using bucky paper as a therapeutic aid in medical applications |
US20050159805A1 (en) * | 2004-01-20 | 2005-07-21 | Jan Weber | Functional coatings and designs for medical implants |
US8691180B2 (en) * | 2005-08-25 | 2014-04-08 | The Regents Of The University Of California | Controlled placement and orientation of nanostructures |
JP4971836B2 (ja) | 2007-03-05 | 2012-07-11 | 帝人株式会社 | 窒化ホウ素ナノチューブ分散液、及びそれより得られる不織布 |
CN101450288B (zh) * | 2007-11-30 | 2012-08-29 | 清华大学 | 过滤膜及其制备方法 |
US20100009165A1 (en) * | 2008-07-10 | 2010-01-14 | Zyvex Performance Materials, Llc | Multifunctional Nanomaterial-Containing Composites and Methods for the Production Thereof |
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US9463433B2 (en) * | 2013-06-24 | 2016-10-11 | Jefferson Science Associates, Llc | Nano-materials for adhesive-free adsorbers for bakable extreme high vacuum cryopump surfaces |
CN104418316B (zh) * | 2013-08-27 | 2017-01-25 | 清华大学 | 碳纳米管海绵体及其制备方法 |
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Title |
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KIM, Keun Su et al.,Polymer nanocomposites from free-standing, macroscopic boron nitride nanotube assemblies,RSC Advances,2012年,Vol.5/No.51,pp.1-8, ESI pp.1-9 |
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KR20190082937A (ko) | 2019-07-10 |
US20200055732A1 (en) | 2020-02-20 |
US11866327B2 (en) | 2024-01-09 |
AU2017368072A1 (en) | 2019-05-23 |
CA3043510A1 (en) | 2018-06-07 |
AU2017368072B2 (en) | 2021-10-07 |
KR102524017B1 (ko) | 2023-04-20 |
EP3548435A4 (en) | 2020-07-15 |
WO2018102437A1 (en) | 2018-06-07 |
EP3548435A1 (en) | 2019-10-09 |
JP2020500829A (ja) | 2020-01-16 |
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