JP7154422B2 - 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置 - Google Patents
電力用半導体装置、電力用半導体装置の製造方法および電力変換装置 Download PDFInfo
- Publication number
- JP7154422B2 JP7154422B2 JP2021541814A JP2021541814A JP7154422B2 JP 7154422 B2 JP7154422 B2 JP 7154422B2 JP 2021541814 A JP2021541814 A JP 2021541814A JP 2021541814 A JP2021541814 A JP 2021541814A JP 7154422 B2 JP7154422 B2 JP 7154422B2
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor device
- resin insulating
- flow prevention
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 137
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title description 21
- 229920005989 resin Polymers 0.000 claims description 260
- 239000011347 resin Substances 0.000 claims description 260
- 230000002265 prevention Effects 0.000 claims description 175
- 238000001816 cooling Methods 0.000 claims description 89
- 238000009413 insulation Methods 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 53
- 230000002093 peripheral effect Effects 0.000 claims description 52
- 230000003014 reinforcing effect Effects 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 230000006835 compression Effects 0.000 claims description 14
- 238000007906 compression Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229920001971 elastomer Polymers 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910000846 In alloy Inorganic materials 0.000 claims description 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000007789 sealing Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 9
- 239000012071 phase Substances 0.000 description 9
- 238000010292 electrical insulation Methods 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 238000005266 casting Methods 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図1は、本発明の実施の形態1における電力用半導体装置を示す平面構造模式図である。図2は、本発明の実施の形態1における電力用半導体装置を示す断面構造模式図である。図1は、封止部材5を透過して、電力用半導体装置100を上面から見た平面構造模式図である。図2は、図1の一点鎖線AAにおける断面構造模式図である。
し量は、樹脂絶縁部材12の四辺の各々の中央部が多く、辺の角部では、流れ出し量は、ほぼ無い。すなわち、モジュール部2と冷却部13との接着前に、樹脂絶縁部材12の辺の角部にあった樹脂が、モジュール部2と冷却部13との接着(加圧)によって、辺の中央部に引き寄せられ、辺の角部では樹脂が不足状態になっている。このため、電力用半導体装置の絶縁破壊は、樹脂絶縁部材12の辺の角部で発生するのが一般的である。
本実施の形態2においては、実施の形態1で用いた樹脂絶縁部材12の外周部にモジュール部2の下面または冷却部13の上面(ヒートシンク10の上面)から突出した突起部22,23を設けたことが異なる。このように、樹脂絶縁部材12の外周部にモジュール部2の下面または冷却部13の上面(ヒートシンク10の上面)から突出した突起部22,23を形成したので、流れ防止部材11は、突起部22,23と突起部22,23と対向する面とによって加圧圧縮され、樹脂絶縁部材12の外周部でボイドの発生が抑制される。この結果、モジュール部2と冷却部13との接着において、絶縁性、放熱性を向上することができ、電力用半導体装置100の信頼性を向上することができる。なお、その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
本実施の形態3においては、実施の形態1で用いた流れ防止部材11の外周部に、モジュール部2の下面または冷却部13の上面(ヒートシンク10の上面)から突出した流れ防止補強壁24,25,26を形成したことが異なる。このように、流れ防止部材11の外周部にモジュール部2の下面または冷却部13の上面(ヒートシンク10の上面)から突出した流れ防止補強壁24,25,26を形成したので、樹脂絶縁部材12からの樹脂の流れ出し圧力が高い場合でも、流れ防止補強壁24,25,26を設けたことで樹脂の流れ出しを抑制でき、樹脂絶縁部材12の外周部でボイドの発生が抑制される。この結果、モジュール部2と冷却部13との接着において、絶縁性、放熱性を向上することができ、電力用半導体装置300の信頼性を向上することができる。なお、その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
本実施の形態4は、上述した実施の形態1から3のいずれかに係る電力用半導体装置を電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態4として、三相のインバータに本発明を適用した場合について説明する。
Claims (14)
- モジュール部と、
前記モジュール部と接着された樹脂絶縁部材と、
前記樹脂絶縁部材を介して前記モジュール部と接続された冷却部と、
前記モジュール部と前記冷却部とに挟まれ、前記樹脂絶縁部材の周囲に配置され、前記樹脂絶縁部材よりも圧縮変形し易い流れ防止部材と、
を備えた電力用半導体装置。 - 前記モジュール部には、前記樹脂絶縁部材よりも外周側に第一突起部が設けられ、前記流れ防止部材は、前記第一突起部と前記冷却部とに挟まれた、請求項1に記載の電力用半導体装置。
- 前記冷却部には、前記樹脂絶縁部材よりも外周側に第二突起部が設けられ、前記流れ防止部材は、前記第二突起部と前記モジュール部とに挟まれた、請求項1または請求項2に記載の電力用半導体装置。
- 前記流れ防止部材は、線材であり、前記樹脂絶縁部材の外周部における前記線材の交差部または接続部が、前記樹脂絶縁部材の角部にある、請求項1から請求項3のいずれか1項に記載の電力用半導体装置。
- 前記線材は、複数ある、請求項4に記載の電力用半導体装置。
- 前記モジュール部および前記冷却部のいずれか一方に、前記流れ防止部材の位置決め用の溝を設けた、請求項1から請求項5のいずれか1項に記載の電力用半導体装置。
- 前記流れ防止部材の外周側で、前記モジュール部および前記冷却部のいずれか一方に、流れ防止補強壁を設けた、請求項1から請求項6のいずれか1項に記載の電力用半導体装置。
- 前記流れ防止部材の高さは、前記流れ防止補強壁の高さよりも高い、請求項7に記載の電力用半導体装置。
- 前記樹脂絶縁部材は、高熱伝導部材に樹脂を含侵させた、請求項1から請求項8のいずれか1項に記載の電力用半導体装置。
- 前記流れ防止部材の材料は、アルミニウム、インジウム、錫、アルミニウム合金、インジウム合金、錫合金またはゴムのいずれかである、請求項1から請求項9のいずれか1項に記載の電力用半導体装置。
- モジュール部を形成するモジュール部形成工程と、
冷却部を形成する冷却部形成工程と、
前記冷却部上に、樹脂絶縁部材と、前記樹脂絶縁部材の周囲に前記樹脂絶縁部材よりも圧縮変形し易い流れ防止部材とを配置する樹脂絶縁部材および流れ防止部材配置工程と、
前記樹脂絶縁部材と前記流れ防止部材とを圧縮して、前記冷却部と前記モジュール部とを接着する冷却部およびモジュール部接着工程と、
を備えた電力用半導体装置の製造方法。 - 前記樹脂絶縁部材および流れ防止部材配置工程は、前記流れ防止部材を前記冷却部に直接接合する、請求項11に記載の電力用半導体装置の製造方法。
- 前記樹脂絶縁部材および流れ防止部材配置工程は、前記流れ防止部材を前記冷却部または前記樹脂絶縁部材のいずれかに塗布する、請求項11に記載の電力用半導体装置の製造方法。
- 請求項1から請求項10のいずれか1項に記載の電力用半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた電力変換装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/033313 WO2021038688A1 (ja) | 2019-08-26 | 2019-08-26 | 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2021038688A1 JPWO2021038688A1 (ja) | 2021-03-04 |
JPWO2021038688A5 JPWO2021038688A5 (ja) | 2022-03-14 |
JP7154422B2 true JP7154422B2 (ja) | 2022-10-17 |
Family
ID=74685361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021541814A Active JP7154422B2 (ja) | 2019-08-26 | 2019-08-26 | 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US12094798B2 (ja) |
JP (1) | JP7154422B2 (ja) |
CN (1) | CN114258585A (ja) |
DE (1) | DE112019007669T5 (ja) |
WO (1) | WO2021038688A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116994954B (zh) * | 2023-09-26 | 2023-12-26 | 贵州芯际探索科技有限公司 | 一种igbt沟槽栅的排布方法及排布结构 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012138475A (ja) | 2010-12-27 | 2012-07-19 | Toyota Motor Corp | 半導体モジュールおよび半導体モジュールの製造方法 |
JP2012174965A (ja) | 2011-02-23 | 2012-09-10 | Mitsubishi Electric Corp | 電力用半導体装置 |
WO2017130512A1 (ja) | 2016-01-28 | 2017-08-03 | 三菱電機株式会社 | パワーモジュール |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4158738B2 (ja) * | 2004-04-20 | 2008-10-01 | 株式会社デンソー | 半導体モジュール実装構造、カード状半導体モジュール及びカード状半導体モジュール密着用受熱部材 |
JP5523299B2 (ja) * | 2010-12-20 | 2014-06-18 | 株式会社日立製作所 | パワーモジュール |
JP5484429B2 (ja) * | 2011-11-18 | 2014-05-07 | 三菱電機株式会社 | 電力変換装置 |
WO2013099545A1 (ja) * | 2011-12-26 | 2013-07-04 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
JP2018026370A (ja) * | 2014-11-13 | 2018-02-15 | 株式会社日立製作所 | パワー半導体モジュール |
JP6150866B2 (ja) * | 2015-11-02 | 2017-06-21 | 三菱電機株式会社 | 電力半導体装置 |
US11049787B2 (en) * | 2016-10-31 | 2021-06-29 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
DE112019007574B4 (de) | 2019-07-26 | 2024-01-25 | Mitsubishi Electric Corporation | Klebeverbindung von Halbleitermodul und Kühlkörper zur Herstellung eines Halbleiterbauelements |
JP6906714B1 (ja) * | 2020-04-10 | 2021-07-21 | 三菱電機株式会社 | 電力用半導体装置および電力変換装置 |
-
2019
- 2019-08-26 US US17/618,886 patent/US12094798B2/en active Active
- 2019-08-26 DE DE112019007669.8T patent/DE112019007669T5/de active Granted
- 2019-08-26 CN CN201980099503.XA patent/CN114258585A/zh active Pending
- 2019-08-26 JP JP2021541814A patent/JP7154422B2/ja active Active
- 2019-08-26 WO PCT/JP2019/033313 patent/WO2021038688A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012138475A (ja) | 2010-12-27 | 2012-07-19 | Toyota Motor Corp | 半導体モジュールおよび半導体モジュールの製造方法 |
JP2012174965A (ja) | 2011-02-23 | 2012-09-10 | Mitsubishi Electric Corp | 電力用半導体装置 |
WO2017130512A1 (ja) | 2016-01-28 | 2017-08-03 | 三菱電機株式会社 | パワーモジュール |
Also Published As
Publication number | Publication date |
---|---|
CN114258585A (zh) | 2022-03-29 |
DE112019007669T5 (de) | 2022-06-15 |
JPWO2021038688A1 (ja) | 2021-03-04 |
US12094798B2 (en) | 2024-09-17 |
WO2021038688A1 (ja) | 2021-03-04 |
US20220359336A1 (en) | 2022-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5067267B2 (ja) | 樹脂封止型半導体装置とその製造方法 | |
JP6575739B1 (ja) | 半導体装置、半導体装置の製造方法および電力変換装置 | |
JP6752381B1 (ja) | 半導体モジュールおよび電力変換装置 | |
WO2021181831A1 (ja) | 電気回路体、電力変換装置、および電気回路体の製造方法 | |
JP6945418B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP7154422B2 (ja) | 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置 | |
JPWO2020157965A1 (ja) | 半導体装置およびその製造方法ならびに電力変換装置 | |
US11699666B2 (en) | Semiconductor device and power conversion device | |
JP7109347B2 (ja) | 半導体装置および電力変換装置 | |
WO2020148879A1 (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
JP7479771B2 (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
JP7134345B2 (ja) | 半導体モジュール、半導体モジュールの製造方法および電力変換装置 | |
US20230154820A1 (en) | Power semiconductor device and power conversion device | |
WO2022239154A1 (ja) | パワーモジュールおよび電力変換装置 | |
JPWO2020245998A1 (ja) | 半導体装置、電力変換装置および半導体装置の製造方法 | |
JP6851559B1 (ja) | 半導体装置および電力変換装置 | |
WO2024090278A1 (ja) | 半導体装置、電力変換装置および半導体装置の製造方法 | |
WO2024009617A1 (ja) | 電気回路体および電力変換装置 | |
WO2024004024A1 (ja) | パワーモジュール及び電力変換装置 | |
US11887903B2 (en) | Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus | |
WO2024004026A1 (ja) | 半導体装置及び電力変換装置 | |
US20240030087A1 (en) | Semiconductor device, method of manufacturing semiconductor device, and power conversion device | |
WO2022049697A1 (ja) | 半導体装置、電力変換装置および半導体装置の製造方法 | |
JP2022029886A (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
JP2022098583A (ja) | 電気回路体および電力変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211217 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220906 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221004 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7154422 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |