JP7151943B2 - 金属錯体、組成物、レジスト材料、パターン形成方法及び電子デバイスの製造方法 - Google Patents

金属錯体、組成物、レジスト材料、パターン形成方法及び電子デバイスの製造方法 Download PDF

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JP7151943B2
JP7151943B2 JP2022532642A JP2022532642A JP7151943B2 JP 7151943 B2 JP7151943 B2 JP 7151943B2 JP 2022532642 A JP2022532642 A JP 2022532642A JP 2022532642 A JP2022532642 A JP 2022532642A JP 7151943 B2 JP7151943 B2 JP 7151943B2
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metal complex
group
resist material
compound
ether
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Japanese (ja)
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JPWO2022091731A1 (zh
Inventor
知之 今田
裕仁 長田
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DIC Corp
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DIC Corp
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C65/00—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C65/01—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups
    • C07C65/105—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups polycyclic
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2022532642A 2020-10-27 2021-10-07 金属錯体、組成物、レジスト材料、パターン形成方法及び電子デバイスの製造方法 Active JP7151943B2 (ja)

Applications Claiming Priority (3)

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JP2020179489 2020-10-27
JP2020179489 2020-10-27
PCT/JP2021/037087 WO2022091731A1 (ja) 2020-10-27 2021-10-07 金属錯体、組成物、レジスト材料、パターン形成方法及び電子デバイスの製造方法

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JPWO2022091731A1 JPWO2022091731A1 (zh) 2022-05-05
JP7151943B2 true JP7151943B2 (ja) 2022-10-12

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JP2022532642A Active JP7151943B2 (ja) 2020-10-27 2021-10-07 金属錯体、組成物、レジスト材料、パターン形成方法及び電子デバイスの製造方法

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JP (1) JP7151943B2 (zh)
KR (1) KR20230037604A (zh)
CN (1) CN116438185A (zh)
TW (1) TW202222765A (zh)
WO (1) WO2022091731A1 (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008209473A (ja) 2007-02-23 2008-09-11 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
WO2016140057A1 (ja) 2015-03-05 2016-09-09 Jsr株式会社 感放射線性組成物及びパターン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4128247B2 (ja) * 1996-11-01 2008-07-30 株式会社リコー フェノール系化合物及び電子写真感光体
JP5708522B2 (ja) 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP6631536B2 (ja) 2014-12-02 2020-01-15 Jsr株式会社 フォトレジスト組成物及びその製造方法並びにレジストパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008209473A (ja) 2007-02-23 2008-09-11 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
WO2016140057A1 (ja) 2015-03-05 2016-09-09 Jsr株式会社 感放射線性組成物及びパターン形成方法

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KR20230037604A (ko) 2023-03-16
CN116438185A (zh) 2023-07-14
WO2022091731A1 (ja) 2022-05-05
TW202222765A (zh) 2022-06-16
JPWO2022091731A1 (zh) 2022-05-05

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