JP7144219B2 - 真空処理装置及びトレイ - Google Patents

真空処理装置及びトレイ Download PDF

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Publication number
JP7144219B2
JP7144219B2 JP2018128553A JP2018128553A JP7144219B2 JP 7144219 B2 JP7144219 B2 JP 7144219B2 JP 2018128553 A JP2018128553 A JP 2018128553A JP 2018128553 A JP2018128553 A JP 2018128553A JP 7144219 B2 JP7144219 B2 JP 7144219B2
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rotary table
tray
film
workpiece
shield member
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JP2018128553A
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English (en)
Japanese (ja)
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JP2019167618A (ja
JP2019167618A5 (zh
Inventor
由雄 川又
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Priority to KR1020190022402A priority Critical patent/KR102194574B1/ko
Priority to CN201910213184.2A priority patent/CN110295350B/zh
Priority to TW108109663A priority patent/TWI688032B/zh
Publication of JP2019167618A publication Critical patent/JP2019167618A/ja
Priority to KR1020200120476A priority patent/KR102412766B1/ko
Publication of JP2019167618A5 publication Critical patent/JP2019167618A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018128553A 2018-03-22 2018-07-05 真空処理装置及びトレイ Active JP7144219B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020190022402A KR102194574B1 (ko) 2018-03-22 2019-02-26 진공 처리 장치 및 트레이
CN201910213184.2A CN110295350B (zh) 2018-03-22 2019-03-20 真空处理装置
TW108109663A TWI688032B (zh) 2018-03-22 2019-03-21 真空處理裝置及托盤
KR1020200120476A KR102412766B1 (ko) 2018-03-22 2020-09-18 진공 처리 장치 및 트레이

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018055265 2018-03-22
JP2018055265 2018-03-22

Publications (3)

Publication Number Publication Date
JP2019167618A JP2019167618A (ja) 2019-10-03
JP2019167618A5 JP2019167618A5 (zh) 2021-07-29
JP7144219B2 true JP7144219B2 (ja) 2022-09-29

Family

ID=68107179

Family Applications (1)

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JP2018128553A Active JP7144219B2 (ja) 2018-03-22 2018-07-05 真空処理装置及びトレイ

Country Status (4)

Country Link
JP (1) JP7144219B2 (zh)
KR (2) KR102194574B1 (zh)
CN (1) CN110295350B (zh)
TW (1) TWI688032B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113265626B (zh) 2020-02-14 2023-06-16 芝浦机械电子装置株式会社 成膜装置及成膜装置的水分去除方法
JP7451436B2 (ja) 2020-02-14 2024-03-18 芝浦メカトロニクス株式会社 成膜装置及び成膜装置の水分除去方法
JP7390997B2 (ja) * 2020-09-15 2023-12-04 芝浦メカトロニクス株式会社 成膜装置
JP2022155711A (ja) * 2021-03-31 2022-10-14 芝浦メカトロニクス株式会社 成膜装置
CN113690172B (zh) * 2021-06-30 2023-10-13 华灿光电（浙江）有限公司 用于提高外延片波长均匀性的石墨基板
TWI849583B (zh) * 2021-11-19 2024-07-21 日商芝浦機械電子裝置股份有限公司 供給裝置及成膜裝置
CN114572530B (zh) * 2022-03-18 2023-05-23 南京信息工程大学 一种快递盒及其无人机搭载装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014110378A (ja) 2012-12-04 2014-06-12 Tokyo Electron Ltd 成膜装置
JP2015209557A (ja) 2014-04-24 2015-11-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP2016072237A (ja) 2014-09-30 2016-05-09 芝浦メカトロニクス株式会社 プラズマ処理装置
CN105803424A (zh) 2016-03-24 2016-07-27 广东省中科宏微半导体设备有限公司 薄膜生长腔室和薄膜生长设备
JP2017120781A (ja) 2015-12-28 2017-07-06 芝浦メカトロニクス株式会社 プラズマ処理装置
JP2018022880A (ja) 2016-06-07 2018-02-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハ均一性のための輪郭ポケット及びハイブリッドサセプタ
JP2017172019A5 (zh) 2016-03-25 2019-01-24

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JPS56112469A (en) * 1980-02-06 1981-09-04 Toshiba Corp Sputtering device
JP4428873B2 (ja) 2001-02-28 2010-03-10 芝浦メカトロニクス株式会社 スパッタリング装置
US7744730B2 (en) * 2005-04-14 2010-06-29 Tango Systems, Inc. Rotating pallet in sputtering system
US8808456B2 (en) * 2008-08-29 2014-08-19 Tokyo Electron Limited Film deposition apparatus and substrate process apparatus
JP5857896B2 (ja) * 2012-07-06 2016-02-10 東京エレクトロン株式会社 成膜装置の運転方法及び成膜装置
JP6040609B2 (ja) * 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
CN105463385B (zh) * 2014-09-30 2018-08-14 芝浦机械电子装置株式会社 等离子体处理装置
JP6411975B2 (ja) * 2014-09-30 2018-10-24 芝浦メカトロニクス株式会社 成膜装置及び成膜基板製造方法
CN111948744B (zh) * 2015-11-20 2023-05-09 Ａｇｃ株式会社 带膜的弯曲基材及其制造方法以及图像显示装置
JP6629116B2 (ja) * 2016-03-25 2020-01-15 芝浦メカトロニクス株式会社 プラズマ処理装置
JP6584355B2 (ja) * 2016-03-29 2019-10-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6966227B2 (ja) * 2016-06-28 2021-11-10 芝浦メカトロニクス株式会社 成膜装置、成膜製品の製造方法及び電子部品の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014110378A (ja) 2012-12-04 2014-06-12 Tokyo Electron Ltd 成膜装置
JP2015209557A (ja) 2014-04-24 2015-11-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP2016072237A (ja) 2014-09-30 2016-05-09 芝浦メカトロニクス株式会社 プラズマ処理装置
JP2017120781A (ja) 2015-12-28 2017-07-06 芝浦メカトロニクス株式会社 プラズマ処理装置
CN105803424A (zh) 2016-03-24 2016-07-27 广东省中科宏微半导体设备有限公司 薄膜生长腔室和薄膜生长设备
JP2017172019A5 (zh) 2016-03-25 2019-01-24
JP2018022880A (ja) 2016-06-07 2018-02-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハ均一性のための輪郭ポケット及びハイブリッドサセプタ

Also Published As

Publication number Publication date
TW201941340A (zh) 2019-10-16
KR20200111143A (ko) 2020-09-28
CN110295350A (zh) 2019-10-01
KR102412766B1 (ko) 2022-06-27
JP2019167618A (ja) 2019-10-03
CN110295350B (zh) 2022-01-11
KR102194574B1 (ko) 2020-12-23
KR20190111759A (ko) 2019-10-02
TWI688032B (zh) 2020-03-11

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