JP7132753B2 - イオン交換された基板の個片化 - Google Patents

イオン交換された基板の個片化 Download PDF

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JP7132753B2
JP7132753B2 JP2018106563A JP2018106563A JP7132753B2 JP 7132753 B2 JP7132753 B2 JP 7132753B2 JP 2018106563 A JP2018106563 A JP 2018106563A JP 2018106563 A JP2018106563 A JP 2018106563A JP 7132753 B2 JP7132753 B2 JP 7132753B2
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substrate
stress
thickness
dicing
along
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JP2019006669A (ja
JP2019006669A5 (https=
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スコット・ジェイ・リム
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パロ アルト リサーチ センター インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
    • C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/40—Arrangements for protection of devices protecting against tampering, e.g. unauthorised inspection or reverse engineering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Surface Treatment Of Glass (AREA)
JP2018106563A 2017-06-21 2018-06-04 イオン交換された基板の個片化 Active JP7132753B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/629,506 US10026651B1 (en) 2017-06-21 2017-06-21 Singulation of ion-exchanged substrates
US15/629,506 2017-06-21

Publications (3)

Publication Number Publication Date
JP2019006669A JP2019006669A (ja) 2019-01-17
JP2019006669A5 JP2019006669A5 (https=) 2021-07-26
JP7132753B2 true JP7132753B2 (ja) 2022-09-07

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ID=62562955

Family Applications (1)

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JP2018106563A Active JP7132753B2 (ja) 2017-06-21 2018-06-04 イオン交換された基板の個片化

Country Status (3)

Country Link
US (1) US10026651B1 (https=)
EP (1) EP3418263B1 (https=)
JP (1) JP7132753B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9154138B2 (en) 2013-10-11 2015-10-06 Palo Alto Research Center Incorporated Stressed substrates for transient electronic systems
US9780044B2 (en) 2015-04-23 2017-10-03 Palo Alto Research Center Incorporated Transient electronic device with ion-exchanged glass treated interposer
US10012250B2 (en) 2016-04-06 2018-07-03 Palo Alto Research Center Incorporated Stress-engineered frangible structures
US10026579B2 (en) 2016-07-26 2018-07-17 Palo Alto Research Center Incorporated Self-limiting electrical triggering for initiating fracture of frangible glass
US10224297B2 (en) 2016-07-26 2019-03-05 Palo Alto Research Center Incorporated Sensor and heater for stimulus-initiated fracture of a substrate
US10903173B2 (en) 2016-10-20 2021-01-26 Palo Alto Research Center Incorporated Pre-conditioned substrate
US10717669B2 (en) * 2018-05-16 2020-07-21 Palo Alto Research Center Incorporated Apparatus and method for creating crack initiation sites in a self-fracturing frangible member
US11107645B2 (en) 2018-11-29 2021-08-31 Palo Alto Research Center Incorporated Functionality change based on stress-engineered components
US10947150B2 (en) 2018-12-03 2021-03-16 Palo Alto Research Center Incorporated Decoy security based on stress-engineered substrates
US10969205B2 (en) 2019-05-03 2021-04-06 Palo Alto Research Center Incorporated Electrically-activated pressure vessels for fracturing frangible structures
US12013043B2 (en) 2020-12-21 2024-06-18 Xerox Corporation Triggerable mechanisms and fragment containment arrangements for self-destructing frangible structures and sealed vessels
US11904986B2 (en) 2020-12-21 2024-02-20 Xerox Corporation Mechanical triggers and triggering methods for self-destructing frangible structures and sealed vessels

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008007360A (ja) 2006-06-28 2008-01-17 Optrex Corp マザーガラス基板及びガラス基板ならびにそのガラス基板の製造方法
JP2010287592A (ja) 2009-06-09 2010-12-24 Renesas Electronics Corp 半導体装置、半導体ウェハおよびその製造方法
CN102399052A (zh) 2010-09-15 2012-04-04 利科光学股份有限公司 预设路径的强化玻璃切割方法
US20120135195A1 (en) 2010-11-30 2012-05-31 Gregory Scott Glaesemann Methods for separating glass articles from strengthened glass substrate sheets
CN103058505A (zh) 2011-10-20 2013-04-24 雅士晶业股份有限公司 表面具压应力层图案的玻璃基板
JP2013159505A (ja) 2012-02-02 2013-08-19 Asahi Glass Co Ltd 化学強化ガラスの製造方法及び化学強化ガラス
JP2014069995A (ja) 2012-09-28 2014-04-21 Kiso Micro Kk ガラス基板の製造方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138401A (en) 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3666967A (en) 1971-05-12 1972-05-30 Us Navy Self-destruct aluminum-tungstic oxide films
US3882323A (en) 1973-12-17 1975-05-06 Us Navy Method and apparatus for protecting sensitive information contained in thin-film microelectonic circuitry
US4102664A (en) 1977-05-18 1978-07-25 Corning Glass Works Method for making glass articles with defect-free surfaces
GB8322258D0 (en) 1983-08-18 1983-09-21 Holmes A Security and protection screens
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
DE19958750B4 (de) 1999-12-07 2006-08-24 Robert Bosch Gmbh Leckwellenantenne
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
JP4115859B2 (ja) 2003-02-28 2008-07-09 株式会社日立製作所 陽極接合方法および電子装置
DE10309826B4 (de) * 2003-03-05 2009-11-12 Schott Ag Verfahren zum Strukturieren von Phosphatgläsern durch zerstörungsfreien Ionenaustausch, strukturierte Phosphatgläser und deren Verwendung
US7002517B2 (en) 2003-06-20 2006-02-21 Anritsu Company Fixed-frequency beam-steerable leaky-wave microstrip antenna
EP1671375A4 (en) 2003-10-09 2009-11-25 Ocas Corp BOLOMETRIC INFRARED SENSOR WITH TWO-LAYER STRUCTURE AND METHOD OF MANUFACTURING THEREOF
DE102004015546B4 (de) 2004-03-30 2011-05-12 Infineon Technologies Ag Halbleiterchip mit integrierter Schaltung und Verfahren zum Sichern einer integrierten Halbleiterschaltung
US20060270190A1 (en) 2005-05-25 2006-11-30 The Regents Of The University Of California Method of transferring a thin crystalline semiconductor layer
WO2007019277A2 (en) 2005-08-03 2007-02-15 California Institute Of Technology Method of forming semiconductor layers on handle substrates
KR101389808B1 (ko) 2005-11-18 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치
US8168050B2 (en) 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
US7623560B2 (en) 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
US8089285B2 (en) 2009-03-03 2012-01-03 International Business Machines Corporation Implementing tamper resistant integrated circuit chips
US8130072B2 (en) 2009-05-14 2012-03-06 Palo Alto Research Center Incorporated Vanadium oxide thermal microprobes
CN201532635U (zh) 2009-09-03 2010-07-21 百富计算机技术（深圳）有限公司 一种安全保护装置
US8946590B2 (en) 2009-11-30 2015-02-03 Corning Incorporated Methods for laser scribing and separating glass substrates
FR2953213B1 (fr) * 2009-12-01 2013-03-29 Saint Gobain Procede de structuration de surface par abrasion ionique,surface structuree et utilisations
TWI438162B (zh) * 2010-01-27 2014-05-21 Wintek Corp 強化玻璃切割方法及強化玻璃切割預置結構
JP6014041B2 (ja) 2010-10-15 2016-10-25 シーレイト リミテッド ライアビリティー カンパニーＳｅａｒｅｔｅ Ｌｌｃ 表面散乱アンテナ
US8616024B2 (en) * 2010-11-30 2013-12-31 Corning Incorporated Methods for forming grooves and separating strengthened glass substrate sheets
US8539794B2 (en) * 2011-02-01 2013-09-24 Corning Incorporated Strengthened glass substrate sheets and methods for fabricating glass panels from glass substrate sheets
WO2012135950A1 (en) 2011-04-07 2012-10-11 Polyvalor, Limited Partnership Full-space scanning end-switched crlh leaky-wave antenna
US8635887B2 (en) * 2011-08-10 2014-01-28 Corning Incorporated Methods for separating glass substrate sheets by laser-formed grooves
TWI415809B (zh) * 2011-08-12 2013-11-21 Wintek Corp 強化玻璃單元及其製作方法以及具有強化玻璃單元的覆蓋板
US20130122260A1 (en) * 2011-11-10 2013-05-16 Nai-Yue Liang Glass substrate having a patterned layer of compressive stress on a surface thereof
CN108389893A (zh) 2011-12-01 2018-08-10 伊利诺伊大学评议会 经设计以经历可编程转变的瞬态器件
US9938180B2 (en) 2012-06-05 2018-04-10 Corning Incorporated Methods of cutting glass using a laser
US8816717B2 (en) 2012-10-17 2014-08-26 International Business Machines Corporation Reactive material for integrated circuit tamper detection and response
US9385435B2 (en) 2013-03-15 2016-07-05 The Invention Science Fund I, Llc Surface scattering antenna improvements
WO2014169170A1 (en) 2013-04-12 2014-10-16 The Board Of Trustees Of The University Of Illinois Inorganic and organic transient electronic devices
US9790128B2 (en) 2013-08-07 2017-10-17 Corning Incorporated Laser controlled ion exchange process and glass articles formed therefrom
US9356603B2 (en) 2013-10-11 2016-05-31 Palo Alto Research Center Incorporated Thermally tempered glass substrate using CTE mismatched layers and paste mixtures for transient electronic systems
US9154138B2 (en) 2013-10-11 2015-10-06 Palo Alto Research Center Incorporated Stressed substrates for transient electronic systems
US9294098B2 (en) 2013-11-26 2016-03-22 Lawrence Livermore National Security, Llc System and method for on demand, vanishing, high performance electronic systems
US9853361B2 (en) 2014-05-02 2017-12-26 The Invention Science Fund I Llc Surface scattering antennas with lumped elements
US9711852B2 (en) 2014-06-20 2017-07-18 The Invention Science Fund I Llc Modulation patterns for surface scattering antennas
US9586857B2 (en) * 2014-11-17 2017-03-07 International Business Machines Corporation Controlling fragmentation of chemically strengthened glass
US9780044B2 (en) 2015-04-23 2017-10-03 Palo Alto Research Center Incorporated Transient electronic device with ion-exchanged glass treated interposer
US9577047B2 (en) 2015-07-10 2017-02-21 Palo Alto Research Center Incorporated Integration of semiconductor epilayers on non-native substrates

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008007360A (ja) 2006-06-28 2008-01-17 Optrex Corp マザーガラス基板及びガラス基板ならびにそのガラス基板の製造方法
JP2010287592A (ja) 2009-06-09 2010-12-24 Renesas Electronics Corp 半導体装置、半導体ウェハおよびその製造方法
CN102399052A (zh) 2010-09-15 2012-04-04 利科光学股份有限公司 预设路径的强化玻璃切割方法
US20120135195A1 (en) 2010-11-30 2012-05-31 Gregory Scott Glaesemann Methods for separating glass articles from strengthened glass substrate sheets
CN103058505A (zh) 2011-10-20 2013-04-24 雅士晶业股份有限公司 表面具压应力层图案的玻璃基板
JP2013159505A (ja) 2012-02-02 2013-08-19 Asahi Glass Co Ltd 化学強化ガラスの製造方法及び化学強化ガラス
JP2014069995A (ja) 2012-09-28 2014-04-21 Kiso Micro Kk ガラス基板の製造方法

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EP3418263A1 (en) 2018-12-26
US10026651B1 (en) 2018-07-17
JP2019006669A (ja) 2019-01-17
EP3418263B1 (en) 2022-05-25

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