JP7111935B2 - 半導体デバイスのための耐酸化障壁金属プロセス - Google Patents

半導体デバイスのための耐酸化障壁金属プロセス Download PDF

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JP7111935B2
JP7111935B2 JP2018532131A JP2018532131A JP7111935B2 JP 7111935 B2 JP7111935 B2 JP 7111935B2 JP 2018532131 A JP2018532131 A JP 2018532131A JP 2018532131 A JP2018532131 A JP 2018532131A JP 7111935 B2 JP7111935 B2 JP 7111935B2
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barrier layer
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oxidation resistant
resistant barrier
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JP2018538700A5 (enExample
JP2018538700A (ja
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エイ ウエスト ジェフェリー
アール ウダヤクマール ケザッケダス
エイチ ワーニンゴフ エリック
ジー メリアム アラン
エイ ファウスト リック
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テキサス インスツルメンツ インコーポレイテッド
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
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    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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JP2018532131A 2015-12-18 2016-12-19 半導体デバイスのための耐酸化障壁金属プロセス Active JP7111935B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/974,012 2015-12-18
US14/974,012 US9704804B1 (en) 2015-12-18 2015-12-18 Oxidation resistant barrier metal process for semiconductor devices
PCT/US2016/067495 WO2017106828A1 (en) 2015-12-18 2016-12-19 Oxidation resistant barrier metal process for semiconductor devices

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JP2018538700A JP2018538700A (ja) 2018-12-27
JP2018538700A5 JP2018538700A5 (enExample) 2020-01-30
JP7111935B2 true JP7111935B2 (ja) 2022-08-03

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US (3) US9704804B1 (enExample)
EP (1) EP3391408B1 (enExample)
JP (1) JP7111935B2 (enExample)
CN (1) CN108352328A (enExample)
WO (1) WO2017106828A1 (enExample)

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US9954166B1 (en) * 2016-11-28 2018-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded memory device with a composite top electrode
US10304772B2 (en) 2017-05-19 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with resistive element
JP6872991B2 (ja) * 2017-06-29 2021-05-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10985011B2 (en) 2017-11-09 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with resistive elements
US11309265B2 (en) * 2018-07-30 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having conductive pad structures with multi-barrier films
KR102530319B1 (ko) 2018-12-07 2023-05-09 삼성전자주식회사 전도성 필라를 갖는 반도체 패키지 및 그 제조 방법
CN110676213B (zh) * 2019-09-18 2021-12-14 天津大学 一种针对小线宽要求的硅通孔互连铜线阻挡层优化方法
US12113020B2 (en) * 2021-02-24 2024-10-08 Applied Materials, Inc. Formation of metal vias on metal lines
US20230102711A1 (en) * 2021-09-24 2023-03-30 Intel Corporation Interconnect structures with nitrogen-rich dielectric material interfaces for low resistance vias in integrated circuits

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JP2001257226A (ja) 2000-03-10 2001-09-21 Hitachi Ltd 半導体集積回路装置
JP2004327715A (ja) 2003-04-24 2004-11-18 Handotai Rikougaku Kenkyu Center:Kk 多層配線構造の製造方法

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